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Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

200 V Family of SuperQ-based MOSFETs

Learn more:
idealsemi.com

Product Release
2025-09-04

iDEAL Semiconductor has announced the first of its 200 V family of SuperQ™-based MOSFETs has entered mass production, with four additional 200 V devices now sampling. The first 200 V device to reach mass production, the iS20M028S1P, is a 25 mO MOSFET in a TO-220 package. iDEAL’s lowest-resistance 200 V devices, now sampling in TOLL and D²PAK-7L, achieve a maximum R_DS(on) of just 5.5 mΩ. "By expanding SuperQ into 200 V, iDEAL is proving that silicon innovation is far from over," said Mark Granahan, CEO and Founder of iDEAL Semiconductor. "These results show that we can deliver the lowest resistance and superior switching behavior while maintaining the manufacturability, reliability, and cost advantages of silicon. It’s a major milestone for our company and for customers looking to push efficiency forward." Target applications for the 200 V SuperQ family include motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar.

Three-Phase Sinewave Filter

Learn more:
emisglobal.com

Product Release
2025-09-04

EMIS has announced the release of its TPQS3113 Three-Phase Sinewave Filter, designed to improve power quality, protect connected equipment, and extend operating lifetimes in demanding industrial applications. Modern compact variable frequency drives (VFDs) that utilize high-speed IGBT switching transistors generate significant harmonic distortion. The TPQS3113 filter smooths these pulse width modulated (PWM) signals into near-perfect sinewaves, providing dV/dt protection, reducing motor losses, and increasing load efficiency. This results in longer motor lifespans, enhanced system reliability, and reduced downtime. In addition to motors, the TPQS3113 also benefits other sensitive equipment such as computers, power converters, and automation systems by minimizing voltage and current waveform distortions.

SiC MOSFETs Adopted in Inverter Brick

Learn more:
rohm.com

Industry News
2025-09-04

ROHM and Schaeffler have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer. The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack. "Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness," says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler.

Expansion of European Distribution Centre and Headquarters

Learn more:
ttieurope.com

Industry News
2025-09-03

TTI IP&E – Europe has officially begun construction to expand its European Distribution Centre (EDC) and headquarters. With the groundbreaking ceremony, the project is now underway in Maisach-Gernlinden. Completion of the building exterior is scheduled for November 2026. Installation of the intralogistics and warehouse technology will then begin. Full completion of the EDC, including all building components and infrastructure, is planned for March 2028. The expansion will double TTI’s footprint at the site, adding 51,000 m² of space directly connected to the existing buildings. This includes approximately 30,000 m² of new warehouse and logistics capacity and 6,000 m² of additional office and administrative space. The project is backed by Invesco Real Estate, Munich, as investor and owner, and executed by BREMER Stuttgart GmbH as general contractor. The expanded EDC will feature state-of-the-art automation, including the world’s largest Autostore system built on a platform structure. This will enhance material flow efficiency and ensure faster, more reliable deliveries across Europe. The expansion will also create around 200 new ergonomic and modern jobs, adding to the current workforce of approximately 700 employees.

ECPE Workshop ’Ultra-High-Voltage Power Electronics’

Learn more:
ecpe.org

Event News
2025-09-03

The shift to renewables demands a stronger, smarter grid. Medium Voltage DC (MVDC) has been identified as a key enabler, allowing efficient long-distance power transmission and mega-watt EV charging. But how do we control such high voltages? Discover the answer with Europe’s leading experts during this workshop November 12 - 13 in Lyon, France or online. Explore the development of cutting-edge SiC semiconductors to facilitate the high-voltage converters shaping the future of energy.

Automotive High-Withstand Voltage LDO Linear Regulator IC

Learn more:
ablic.com

Product Release
2025-09-02

ABLIC launched sales of the S-19230/1 Series, an automotive high-withstand voltage regulator IC. Recently, the power consumption of automotive electronic components like various ECUs and infotainment systems has been steadily increasing. As a countermeasure, there’s a growing trend to increase the voltage of automotive auxiliary batteries from the conventional 12V to 48V. Auxiliary batteries supply power to electronic components via wire harnesses. By quadrupling the voltage to supply the same power, the current can be reduced to one-quarter. This enables the use of thinner wire harnesses, contributing to lighter vehicle designs and improved fuel or electric power efficiency. The S-19230/1 Series supports 48V, 24V, and 12V auxiliary batteries, thanks to its high input voltage tolerance of up to 80V. It also achieves a low operating current of 2.0µA, which is crucial for supplying power to constantly operating sensors and CAN/LIN transceivers, helping to reduce the system’s standby current. Additionally, this product is the first ABLIC voltage regulator to integrate an open-loop protection circuit. The protection circuit suppresses the rise in output voltage to a certain level if the wiring between the external resistor and the IC - used for setting the output voltage - is broken (open fault). This protection circuit eliminates the need for conventional external components used for overvoltage protection, contributing to cost reduction, space saving, and enhanced safety.

600 W Automotive TVS Diode

Learn more:
littelfuse.com

Product Release
2025-09-02

Littelfuse announced the launch of the SZSMF6L Series of unidirectional and bidirectional TVS diodes. These 600 W automotive-grade devices provide robust protection against high-energy transients in a compact, surface-mount SOD-123FL package, making them ideal for increasingly space-constrained automotive and electric vehicle (EV) designs. Building on the success of the 400 W SZSMF4L Series introduced in 2023, the SZSMF6L Series delivers 50% higher peak power handling while maintaining the same compact footprint. The improved surge protection and enhanced clamping performance help safeguard critical automotive systems exposed to voltage spikes from switching events, load dumps, or electrostatic discharge (ESD). "The SZSMF6L Series addresses the evolving demands of EV and automotive system designers who need greater transient protection without compromising board space," said Charlie Cai, Director Product Marketing SBU at Littelfuse. "With the transition to zonal architectures and the continued push for miniaturization, this 600 W solution offers engineers a more robust and thermally reliable alternative to the SZSMF4L for high-stress environments." The SZSMF6L TVS diodes enable more efficient, compact, and rugged designs that meet the growing electrical demands of next-generation vehicles. Their performance and footprint compatibility allow seamless upgrade paths from the SZSMF4L when additional power handling is required.

GaN-on-Si Foundry Services

Learn more:
xfab.com

Industry News
2025-09-02

X-FAB Silicon Foundries is building on its expertise in gallium nitride (GaN) processing technology for high-power applications by introducing GaN-on-Si foundry services for dMode devices as part of its XG035 technology platform. The move further leverages X-FAB’s advantage as a pure-play foundry that now offers a set of processing technologies for GaN and other WBG materials – including SiC – to help fabless semiconductor companies bring their designs to life. X-FAB provides the GaN-on-Si technology from its state-of-the-art 8-inch fab in Dresden, one of six production facilities operated by the company worldwide. The Dresden fab hosts a wide range of specialized processing equipment, measurement tools and technologies that are optimized for GaN development and production, together with analog CMOS, in a stable, trusted, automotive-qualified fab environment. Tools on site have been optimized to handle the thicker GaN-on-Si wafers required by customers in sectors such as automotive, data center, industrial, renewable energy, medical, and others. Thanks to strong high-voltage GaN expertise over several years, the company’s in-house expertise now extends to GaN-on-Si foundry services for dMode devices following the recent release of its XG035 dMode technology as an open foundry platform. The process includes dMode HEMT transistors (scalable from 100V to 650V), often used in power conversion applications. In addition, X-FAB offers customer-specific GaN technologies including dMode, eMode HEMTs as well as Schottky Barrier Diodes, which are popular for high-frequency rectification, power supply, and solar panel applications, among others.

New Brand Identity and Tagline: "In Everything, Better"

Learn more:
tdk.com

Industry News
2025-09-01

TDK Corporation announces the launch of its new brand identity and tagline: "In Everything, Better". This serves as a significant driver of the Long-term Vision "TDK Transformation" and captures the company’s unique venture spirit, its commitment to progress, and its vision for a sustainable future. For 90 years, TDK has quietly shaped the world from within. TDK has been pushing for progress and boldly reinventing itself; from ferrite cores to cassette tapes, to powering the digital age with advanced components, sensors, and batteries, leading the way towards a sustainable future. The company’s technologies nowadays power the devices and systems that define modern life: from smartphones and electric vehicles to industrial applications and energy systems. With over 100,000 passionate team members worldwide, united by a start-up mentality and a drive for innovation, TDK is an enabler behind the scenes, creating impact from within. "In Everything, Better" - the new tagline, debuting in September 2025, is not just a phrase; it is a declaration of TDK’s promise to always strive for better, for ourselves and for society. Noboru Saito, President & CEO of TDK Corporation mentioned "The new brand identity aligns with our Long-term Vision of TDK Transformation, and it is rooted in our Corporate Motto of ’Contributing to culture and industry through creativity’ and Corporate Principles of ’Vision, Courage, and Trust’. It is what we believe, how we act, and how we communicate. It is who we are today, where we are going in the future and the legacy we create."

150 V MOSFETs in TOLL, TOLG, and TOLT Packages

Learn more:
infineon.com

Product Release
2025-09-01

Infineon Technologies has expanded its OptiMOS™ 6 portfolio by introducing the Automotive 150 V MOSFET family. These devices are specially developed to meet the demanding requirements of modern electric vehicles and are available in three advanced package options: TOLL, TOLG, and TOLT. The automotive MOSFET family, based on Infineon’s 6th generation OptiMOS technology, offers two different drain-source resistance levels across all device variants. All variants are rated for the 150 V voltage class and deliver the lowest R_DS(on) available in this class, reaching as low as 2.5 mΩ. This enables minimal conduction losses and excellent efficiency. The tight distribution of the gate threshold voltage (V_GS(th)) supports optimal synchronization when multiple MOSFETs are used in parallel configurations, which is particularly relevant for high-power automotive systems. The devices also feature low switching losses up to high frequencies, allowing for highly efficient operation in fast-switching applications such as modern DC/DC converters. In terms of thermal performance, the variants achieve a thermal resistance as low as 0.4 K/W. This significantly improves heat dissipation, reduces system-level cooling requirements, and lowers associated expenses.

40 Watt DC/DC Converter

Learn more:
tracopower.com

Product Release
2025-09-01

The THL 40WI series extends Traco Power’s existing DC/DC converter portfolio with 40 Watt, 1′ × 1′ package converters. With the focus on combining cost efficiency and quality this isolated high performance DC/DC converter series is suitable for many different applications. The series comes in an encapsulated, shielded 1 × 1′ × 0.43′ metal package and offers integrated remote on/off and trim functions. High efficiency up to 93% enables the converter to operate from –40°C to +65°C without derating. All models have a wide 4:1 input voltage range and precisely regulated, isolated outputs. The series meets the latest IT safety certifications (UL 62368-1) and is suitable for uses in mobile equipment, instrumentation, distributed power architectures in communication and industrial electronics and everywhere where cost efficiency and quality are critical factors.

Strategic Distribution Partnership to Expand Presence Across APAC

Learn more:
lotus-microsystems.com

Industry News
2025-08-29

Lotus Microsystems and EDOM Technology jointly announced the signing of a strategic distribution agreement for the Asia-Pacific region. This collaboration combines Lotus Microsystems’ power management solutions with EDOM Technology’s extensive distribution network, strong field application engineering (FAE) force, and deep market expertise. The partnership is designed to accelerate customer adoption, deliver superior technical support, and strengthen the presence of both companies across the fast-growing APAC markets. Power and thermal management are crucial aspects of electronic design, especially in the rapidly developing computing, networking, and IoT markets. Effective thermal management ensures that devices operate within a safe temperature range, optimizing performance and extending their operational life. Lotus Microsystems’ work on high-efficiency power modules supports more sustainable computing by reducing energy losses and improving overall power usage effectiveness. "We are delighted to partner with EDOM Technology, a recognized leader in distribution across Asia. This agreement marks an important step in our global expansion, enabling Lotus Microsystems to better serve customers in key APAC markets with the strong support and capabilities that EDOM provides."said Hans Hasselby-Andersen, CEO of Lotus Microsystems.

CAN FD Transceiver Achieves Toyota VeLIO Certification

Learn more:
novosns.com

Product Release
2025-08-29

NOVOSENSE Microelectronics recently announced that its automotive-grade CAN FD transceiver, the NCA1044-Q1, has successfully passed Toyota’s VeLIO (Vehicle LAN Interoperability and Optimization) certification. Prior to this, the device had already obtained the IBEE/FTZ-Zwickau EMC certification in Europe. The certification process involves stringent testing, including Transceiver Delay, dV/dt characteristics, R>D and D>R Distortion Delays, Static and Frequency Response of Threshold Voltage, Single-Ended S-Parameters, and Static Tests. The NCA1044-Q1 successfully passed all these tests, underscoring its capabilities in high-speed communication, signal integrity, and electromagnetic compatibility. In addition to VeLIO, the NCA1044-Q1 has also been certified by IBEE/FTZ-Zwickau according to the IEC 62228-3 standard, while also meeting Volkswagen’s VW80121-3, 2023-12 EMC requirements. Unlike SAE J2962, the IEC 62228-3 standard focuses directly on the EMC performance of the transceiver itself, making the certification one of the most rigorous benchmarks in the automotive industry and a widely referenced standard across global automakers. The IBEE/FTZ-Zwickau EMC certification covers four major categories: Emission RF Disturbances, Immunity to RF Disturbances, Immunity to Transients, and Immunity to ESD. The NCA1044-Q1 passed all tests successfully, providing high confidence in its robustness under demanding automotive conditions. With both VeLIO and IBEE/FTZ-Zwickau certifications, the NCA1044-Q1 significantly reduces its implementation and system verification costs for OEMs and Tier 1 suppliers.

Power Modules to Accelerate Data Center Power Architecture

Learn more:
infineon.com

Industry News
2025-08-28

Infineon Technologies announced the strengthening of its existing collaboration with Delta Electronics in the development of high-density power modules capable of enabling vertical power delivery to AI processors in hyperscale data centers. Together, the companies are taking a next step to drive decarbonization and digitalization in AI data centers further. The partnership leverages Infineon’s ultra-thin silicon (MOSFET) chip technology and embedded packaging expertise, as well as Delta’s industry-leading power module design and manufacturing capabilities. This results in highly dense modules with exceptional efficiency to enable vertical power delivery (VPD) architecture to the xPUs in hyperscale data centers. The usage of vertical power delivery modules in comparison to a lateral mounted discrete solution can save up to 150 tons of CO₂ over an expected lifetime of three years per rack. Assuming that future hyperscale data centers will consists of up to 100 server racks, the amount of carbon dioxide saved is equivalent to the CO₂ emissions of 4000 households per year. Infineon’s OptiMOS™ silicon-based 90 A integrated power-stage solution is being utilized by Delta to develop VPD modules. The use of vertical power delivery is a key factor in improving system efficiency as it allows for a more direct and compact power delivery path. By delivering power vertically, rather than horizontally, the VPD modules reduce power delivery network losses in the system. This, in turn, enables the modules to achieve higher power density and efficiency, while also reducing the amount of heat generated due to less power loss. Additionally, the vertical power delivery design also frees up space on the system board, allowing hyperscalers a more efficient use of space and the development of more compact and dense data center designs reducing total-cost of ownership.

Jingya Huang Appointed Senior Manager Marketing Communications

Learn more:
indium.com

People
2025-08-28

With its commitment to innovation and growth through employee development, Indium Corporation announces the promotion of Jingya Huang to Senior Manager, Marketing Communications, to continue to lead the company’s branding and promotional efforts. In her new role, Huang is responsible for the strategic direction of Indium Corporation’s global marketing communications initiatives, focusing on innovation and maximizing impact in markets worldwide. She will continue to lead the Marketing Communications team with an emphasis on fostering innovation, ownership, and collaboration. Huang will also provide strategic support to other internal teams and lead high-priority special projects that advance the company’s mission and global presence. Huang joined Indium Corporation as Marketing Communications Assistant Manager in 2016. She was promoted to Marketing Communications Manager in 2020, at which point she began leading all global marketing communications efforts and the entire Marketing Communications team.

Digital Hall latch IC in CMOS technology

Learn more:
melexis.com

Product Release
2025-08-28

Melexis unveils a variant of the MLX92211, a 3-wire Hall-effect latch. This device is designed for lateral magnetic position sensing, with high ESD protection and a high output current limit. This latest addition enables motor miniaturization by providing enhanced integration and cost-effective performance, ideal for automotive compact motors used in applications such as seat motors, sunroofs and thermal expansion valves. The MLX92211 IMC addresses these head-on with an integrated magnetic concentrator (IMC) that enables lateral sensing in a surface-mount device (SMD) TSOT-3L package – eliminating the need for through-hole components and aligning with modern automated assembly processes. The result is a reduced motor height, improved packaging flexibility, and optimized manufacturing workflows. The single-package device integrates a voltage regulator (2.7 to 24V operating range), a Hall effect sensor with advanced offset cancellation, and an open-drain output driver. The magnetic core’s enhanced offset cancellation system facilitates faster, more accurate, and robust processing, irrespective of temperature and stress, and includes a negative temperature coefficient to counteract the natural weakening of magnets at high temperatures. The robust latch sensor can be used in both 3-wire and 2-wire (with external resistor) configurations, with the 30mA current limit easily sufficient for maintaining safe and consistent operation in environments such as seat motors – where continuous current up to 25mA is often required. Combined with strong electrostatic discharge (ESD) protection (8kV), automatic output shut-off with self-recovery, and ASIL A functional safety readiness, the MLX92211 IMC meets the reliability requirements of modern automotive deployments.

ReVolt Charges up Hollywood’s Clean Energy

Learn more:
vicorpower.com

Industry News
2025-08-27

Most production companies today rely on gasoline and diesel generators to operate their movie sets. But as these become more elaborate - with enormous footprints and an expanding array of specialized electronics - energy demands have escalated, as have unwanted levels of dangerous CO₂ emissions. ReVolt Holdings has developed a better way to power movie sets and studio backlots by providing clean, mobile, always-on electricity. ReVolt systems power everything - from cameras, sound and lighting equipment to special effects rigs and basecamps - quietly, efficiently and with no CO₂ output. Diesel generators also produce "dirty" power that requires extra filtration when used in sensitive digital lighting and motion control equipment. ReVolt charging systems produce a pure sine wave profile that ensures a clean, stable power source. To ensure stable voltage levels, ReVolt adopted Vicor BCM® bus converters, DCM™ DC-DC converters, and most recently, PRM™ regulators. The BCM4414 converts and isolates 800V into a 48V at 35A bus, which the DCM3414 taps off to regulate 24V loads. The 770W/in³ BCM4414 also serves as a battery emulator, reducing the need for a conventional and bulky 48V battery. The PRM is a non-isolated buck-boost DC-DC regulator capable of converting 48V into various output voltages, with power density exceeding 2kW/in³ and 96% efficiency. Portable, clean energy is in demand today more than ever. As it imprints its power concept on the film industry, ReVolt is preparing to address a variety of new applications, from servicing natural disaster zones to providing power for construction and live events. With the trend toward eMobility and greener, more sustainable power, the relationship with Vicor - grounded in modular power delivery - is gaining momentum and setting the stage for a greener future.

Strengthening Supply Resilience of Key Material for Global Semiconductor Industry

Learn more:
asahi-kasei.com

Industry News
2025-08-26

Asahi Kasei will increase PIMEL™ photosensitive polyimide (PSPI) production capacity at its Fuji City facility in Shizuoka Prefecture, Japan. PSPI is a key material for the global electronics industry, mainly used for buffer coatings and passivation layers in semiconductor applications. By doubling its capacity by 2030, Asahi Kasei underlines its commitment to growing its Electronics business and reinforcing its position as a key supplier for the global semiconductor industry. With the global semiconductor industry entering a new growth cycle and projected to surpass US$1 trillion in revenue by the mid-2030s, as reported by consulting firm Alvarez & Marsal, Asahi Kasei has forecasted that the demand for next-generation semiconductor interlayer insulation will continue to grow rapidly at an average annual growth rate of 8%. In response to this quickly rising demand, Asahi Kasei completed the construction of a new plant producing PIMEL™ photosensitive polyimide in Fuji City, Shizuoka Prefecture, in December 2024. Since then, the company has decided to expand production in Fuji City further, doubling the 2024 capacity by 2030. This expansion is expected to significantly improve the supply resilience of essential materials in the manufacturing of semiconductors. Asahi Kasei will invest approximately ¥16 billion in this expansion.

Conference on Production Technologies and Systems for Electric Mobility (EPTS)

Learn more:
epts-conference.com

Event News
2025-08-25

The Electric Drives Production Conference (E|DPC) is expanding to become the Conference on Production Technologies and Systems for Electric Mobility (EPTS), taking place in Karlsruhe, Germany October 8 & 9. Join leading experts from industry and research for two days packed with high level keynotes, sound technical presentations and networking opportunities.

New CEO of WBG Power Semiconductor Company

Learn more:
navitassemi.com

People
2025-08-25

Navitas Semiconductor's Board of Directors has appointed Chris Allexandre as President and Chief Executive Officer, effective September 1, 2025. He will also join the Company's Board of Directors. The new CEO succeeds Gene Sheridan, a Navitas founder, who will step down as President and CEO and from the Board on August 31, 2025. Allexandre brings more than 25 years of experience in the semiconductor industry. Most recently, he served in senior executive roles at Renesas Electronics, including Senior Vice President and General Manager of its Power Division from October 2023. Chris Allexandre oversaw Renesas' $2.5 billion power management business and led the pivot and execution of its power strategies toward the cloud infrastructure, automotive and industrial markets, including Renesas' acquisition and integration of Transphorm, Inc., a supplier of GaN solutions, in June 2024. Allexandre was previously Renesas' Chief Sales and Marketing Officer from 2019 to 2023. Prior to his tenure at Renesas, Navitas' new CEO held executive roles at Integrated Device Technology (IDT) (acquired by Renesas in 2019) as Senior Vice President of Sales and Marketing; at NXP Corporation as Senior Vice President, Worldwide Sales for Mass Market; and at Fairchild Semiconductor as Senior Vice President of Worldwide Sales, Marketing and Business Operations. Chris Allexandre began his career at Texas Instruments, beginning in its New College Graduate rotation program, and over 16 years in business and sales roles based in Europe and China, becoming TI's Vice President of Sales for EMEA and a member of TI's strategic leadership team in 2012. Allexandre's management experience spans analog, power, mixed-signal and digital products across cloud, industrial, mobile, consumer, telecom, and automotive markets. Chris Allexandre holds a Master of Science in Electrical Engineering from the Institut Supérieur de l'Électronique et du Numérique (ISEN) in Lille, France.

Back to School Giveaway to Empower Tomorrow’s Innovators

Learn more:
digikey.com

Industry News
2025-08-25

DigiKey announces its annual Back to School Giveaway, which offers university students a chance to win products and swag, including one grand prize of a Teledyne LeCroy Power Supply unit. Five entrants will be randomly selected to win a prize package that includes products such as an Aven Tools LED lamp, a Pokit Innovations all-in-one digital tool, a Weidmüller wire stripper, an Adafruit Ladyada’s electronics toolkit, DigiKey swag and more. Plus, one grand prize winner will also receive a Teledyne LeCroy Power Supply unit. "Each year, the Back to School Giveaway is a celebration of curiosity, creativity and the bright future ahead," said Brooks Vigen, senior director of global strategic marketing at DigiKey. "DigiKey is proud to support students as they turn bold ideas into real-world innovations, and we’re excited to see how this generation will shape the technologies of tomorrow." The sweepstakes is open to any student with a university or college email address, and entries may be made in students’ local language. Submissions are open until Oct. 24, 2025, and winners will be announced around Nov. 15, 2025.

Collaboration on SiC Power Semiconductor Wafers

Learn more:
toshiba.semicon-storage.com

Industry News
2025-08-22

Toshiba Electronic Devices & Storage Corporation ("Toshiba") and SICC ("SICC") have signed a memorandum of understanding (MOU) under which they will explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two companies will discuss the scope of their joint efforts and mutual support. Toshiba has an established track record in developing, manufacturing and selling SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and the automotive segment. The company aims to further reduce power losses in the devices and to improve their reliability and efficiency in future high-efficiency power conversion applications. Achieving these goals requires close collaboration with an innovator in SiC wafer technology. Collaboration with SICC, a global leader in SiC wafer development and mass production technology, is expected to drive forward optimal solutions for various applications and accelerate business expansion.

RT Box Workshop in Zurich

Learn more:
plexim.com

Industry News
2025-08-21

In the workshop, you will learn modeling techniques for real-time simulations using PLECS with the PLECS RT Box. You will work hands-on with hardware-in-the-loop (HIL) and rapid control prototyping (RCP) application examples. You will see that step size can be reduced to nanoseconds, even for large-scale models. In addition to the technical aspects, the workshop offers an opportunity to connect with the developers of PLECS. The required software and PLECS RT Box hardware will be provided for the workshop.

USB-C Power Solution with Three-Level Topology

Learn more:
renesas.com

Product Release
2025-08-20

Renesas Electronics introduced the RAA489300/RAA489301 high-performance buck controller designed with a three-level buck topology used for battery charging and voltage regulation in USB-C systems such as multiple-port USB-PD chargers, portable power stations, PC docking station, robots, drones, and other applications that need a high efficiency DC/DC controller. The three-level buck converter topology enabled by the new IC delivers exceptional efficiency and significantly reduces the required inductance for regulating the output voltage. Its innovative design minimizes power loss and reduces system size, making it ideal for compact, high-performance applications. The three-level topology consists of two additional switches and a flying capacitor compared to a conventional two-level buck converter. The flying capacitor reduces voltage stress on the switches, allowing designers to use lower voltage FETs with better figures of merit. The result is reduced conduction and switching losses. This topology also enables the use of a smaller inductor with peak-to-peak ripple of only about 25 percent of that of a two-level converter, enabling reduced inductor core and direct current resistance losses. The 3-Level DC-DC RAA489300/RAA489301 battery charger and voltage regulator offers superior thermal performance, which reduces cooling requirements and results in cost and space savings. This innovative approach addresses the growing demand for compact and efficient power management systems.

SMD Heat Sinks from the Tape

Learn more:
fischerelektronik.de

Product Release
2025-08-15

With the SMD heatsink product group Fischer Elektronik claims to offer "the smallest ribbon heatsinks, also available as tape & reel as standard now, especially for cooling electronic devices on the PCB". The packaging form of the SMD heatsinks as a tape & reel supports and simplifies the automatic assembly and soldering process of the PCB, as the SMD heatsinks can be handled in a similar way to an SMT component. The heatsink designs ICK SMD A 13 ... B TR, ICK SMD F 8 ... TR, ICK SMD F 21 ... B TR, ICK SMD K 19 ... B TR, ICK SMD N 8 ... TR and ICK SMD N 19 ... B TR are optionally available with a black anodised or solderable surface coating as a tape & reel (TR) version. Depending on the position of the SMD heatsink in the tape, an additional kapton point acts as a mounting aid. The tape diameter for all designs is 330 mm, with a tape width of 16, 24 or 32 mm, depending on the heatsink size. All specifications, such as tape diameter, tape width and the number of SMD heatsinks on a reel, can also be adapted to customer-specific requirements.

Changes in Management Positions at Würth Elektronik eiSos Group

Learn more:
we-online.com

People
2025-08-14

Dirk Knorr has taken over the position of COO of the Würth Elektronik eiSos Group. After completing his training as an industrial electronics technician and subsequently graduating with a degree in industrial engineering, Dirk Knorr initially worked as a project manager for a solutions provider before joining Würth Elektronik in 2005. Knorr has extensive expertise in quality and risk management. As part of his role as Managing Director Germany, he has driven forward digitization projects and initiated logistics adjustments at the Waldenburg site, among other things. In his new role, Mr. Knorr will be responsible for the company's core operational pillars, including IT, digital transformation, production, logistics, quality, and eiSos Group compliance standards. Simultaneously, Sebastian Valet has taken over Dirk Knorr's previous position as Managing Director of Würth Elektronik eiSos. Sebastian Valet holds a degree in business administration and has been with the Würth Group since 1999, where his career path led him to Würth Elektronik in 2002. As export manager, Valet played a key role in the internationalization of Würth Elektronik and established the markets in Israel, Turkey, and Australia before taking over several commercial departments at the headquarters in Waldenburg. Most recently, he was responsible for supply chain management, internal sales, export control, and legal & compliance. Following the change in leadership, the management team at Würth Elektronik eiSos now consists of the following members: Thomas Garz, Chief Executive Officer (CEO) of the Würth Elektronik eiSos Group; Alexander Gerfer, Chief Technology Officer (CTO), Würth Elektronik eiSos Group; Dirk Knorr, Chief Operating Officer (COO); Sebastian Valet, Managing Director; Josef Wörner, Managing Director.

Materials Informatics will "revolutionize Battery Development"

Learn more:
idtechex.com

Industry News
2025-08-12

The traditional battery materials discovery process involves physics-informed trial-and-error, which is both expensive and time-consuming. Machine learning methods, specifically materials informatics for discovering electrolyte, electrode, current collector and packaging materials, could provide a necessary avenue for accelerating the battery development process. IDTechEx has now published a report on materials informatics for batteries named "AI-Driven Battery Technology 2025-2035: Technology, Innovation and Opportunities". Materials informatics describes a field of machine learning in which data science is used to screen and discover materials for specific use-cases. It is a technology that has existed for several decades, and a successor to bio-informatics, revolutionizing the pharmaceutical industry. An emerging technology is de novo design, describing materials informatics that utilizes generative AI to design entirely novel materials. A scoring agent and a generative agent work in tandem to score theoretical materials, eventually selecting a candidate with the highest potential for the given application. Meanwhile, de novo design is relatively immature, and though it has seen some success, most of this is in research rather than in the commercial world. Completely novel materials also lack existing supply chains, and as such they are expensive to synthesize as they do not benefit from economy of scale. Generally, IDTechEx predicts that well-established chemistries will heavily favor virtual screening approaches over de novo design, while less established chemistries will require de novo design. IDTechEx predicts that materials informatics will become a necessary part of the battery development over the next decade, especially as new chemistries like lithium-metal become more common.

Survey reveals how Data is powering the Future for Solar Energy Innovation and Growth

Learn more:
fluke.com

Industry News
2025-08-12

A survey, conducted by Censuswide on behalf of Fluke, on key challenges for the solar industry identifies improving panel efficiency, transitioning from reactive to predictive maintenance, and adopting smart technologies as top priorities. Crucially, data emerges as the driving force behind innovation and operational efficiency. The survey engaged over 400 solar OEMs, technicians, and installers across the UK, Germany, Spain and the USA to gain insights. The survey results also highlighted their attitudes toward emerging trends and their expectations for how the future of solar energy is likely to evolve in the coming years. The research revealed that nearly two-thirds of respondents (63%) believe solar will become the dominant energy source in their country. However, it also highlighted significant challenges that must be addressed to turn this optimistic vision into reality and pave the way for a solar-powered future. One of the challenges that emerged in the survey's findings is the need to rapidly shift from reactive maintenance to a more proactive approach. With 91% of those surveyed reporting concerns about the efficiency of the current generation of solar modules and 39% of respondents identifying inverter failures as a common issue, it's clear an effective maintenance strategy is a necessity. Nearly a third of all respondents described their current maintenance strategy as reactive, while more than half indicated that implementing predictive maintenance was a key priority. 59% stressed the need to train technicians in advanced diagnostic tools to address evolving challenges, while 45% view AI integration in solar panel design, optimization, and maintenance as a key opportunity.

Fire Protection Materials for EV Batteries 2025-2035: Markets, Trends, and Forecasts

Learn more:
idtechex.com

Industry News
2025-08-12

IDTechEx's report on Fire Protection Materials for Electric Vehicle Batteries analyzes trends in battery design, safety regulations, and how these will impact fire protection materials. The report benchmarks materials directly and in application within EV battery packs. The materials covered include ceramic blankets/sheets (and other non-wovens), mica, aerogels, coatings (intumescent and other), encapsulants, encapsulating foams, compression pads, phase change materials, polymers, and several other materials. IDTechEx predicts this market will grow at 15% CAGR from 2024 to 2035. By the way: Data continues to support the fact that EVs are less likely to catch fire than internal combustion engine vehicles. However, as a new technology, EVs get more press. Each cell format – prismatic, pouch and cylindrical – has different needs in terms of inter-cell materials which has led to trends in fire protection material adoption. For example, cylindrical systems have largely used encapsulating foams, whereas prismatic systems typically use materials in sheet format such as mica. The market for fire protection materials is becoming increasingly crowded, with a wide range of materials and suppliers available. IDTechEx's material database covers over 150 materials from 72 suppliers. The major categories are benchmarked in the report in terms of thermal conductivity, density, cost, and cost in the required application volume. The report also discusses the regulations that are currently in place and those being discussed. These feed into IDTechEx's market forecasts showing a greater adoption of fire protection materials per vehicle.

TVS Diode for high-speed Consumer Interfaces

Learn more:
tdk-electronics.tdk.com

Product Release
2025-08-12

TDK Corporation has expanded its TVS diode lineup with three models in the SD0201 series, tailored for high-speed consumer electronics interfaces. These TVS diodes offer compact protection for USB Type-C, HDMI, DisplayPort, and Thunderbolt connections in smartphones, laptops, tablets, wearables, and networking devices. Each component comes in a 0201 chip-scale package (CSP), measuring 0.58 x 0.28 x 0.15 mm³ (L x W x H) for space-constrained designs. Having working voltages of ±1 V, ±2 V, and ±3.6 V, the TVS diodes safeguard sensitive circuits from electrostatic discharge (ESD) and transient surges. This means they meet IEC 61000-4-2 standards with ESD discharge robustness up to ±15 kV and support surge current handling up to 7 A, depending on the variant. Their symmetrical design enables bidirectional protection and thus flexible PCB routing, while very low leakage currents and dynamic resistance as low as 0.16 Ω enhance application-level efficiency. The individual components differ in their DC working voltage and parasitic capacitance: the SD0201SL-S1-ULC101 has a working voltage of ±3.6 V and a parasitic capacitance of 0.65 pF, the SD0201-S2-ULC105 of ±2 V and 0.7 pF, and the SD0201SL-S1-ULC104 of ±1 V and 0.15 pF. A LTspice model library for SEED simulations for TVS diodes is available for download.

eFuse Meets High Reliability Server Application Requirements

Learn more:
aosmd.com

Product Release
2025-08-12

Alpha and Omega Semiconductor announced the release of its AOZ17517QI series, a 60A eFuse in a compact 5mm x 5mm QFN package. AOS optimized this eFuse product series for 12V power rails in servers, data centers, and telecom infrastructure. Due to high-reliability requirements for datacenter and telecom infrastructure products, all critical power rails are monitored and protected by an eFuse device to protect the main power bus from interruption due to abnormal load under fault conditions. AOS’ eFuse continuously monitors the current flowing through the power switch. If the current exceeds the set limit, the switch will limit the current to the maximum allowed. If the high current load persists, the switch will eventually turn off, protecting downstream loads from damage, thus acting as a fuse. The eFuse is constructed with AOS’ advanced co-packaging technology that combines a high-performance IC with protection features and the company’s latest high SOA Trench MOSFET. The AOZ17517QI series’ MOSFET offers low R_DS(ON) (0.65mohm) that isolates the load from the input bus when the eFuse is off. These devices are designed to integrate accurate analog current and voltage monitoring signals, and designers can also use multiple eFuse devices in parallel for higher current applications. Multiple devices can operate concurrently and seamlessly distribute the current during the startup phase. In addition, the AOZ17517QI features startup SOA management and other protections, enabling a streamlined and glitch-free system power-up or the ability to hot plug into the backplane.

Global Renewable Power installed Capacity to surge to 11.2 TW by 2035

Learn more:
globaldata.com

Industry News
2025-08-12

Renewable resources, particularly solar photovoltaic (PV) and wind energy, are gaining a larger share in the energy portfolio. Driven primarily by declining costs and strong policy support, particularly for solar PV and wind energy, the global renewable power installed capacity is estimated to surge from 3.42 TW in 2024 to 11.2 TW by 2035, according to GlobalData. The company's latest report, "Renewable Energy: Strategic Intelligence", reveals that the global renewables market expanded from a cumulative installed capacity of 0.93 TW in 2015 to 3.42 TW by the end of 2024, representing a compound annual growth rate (CAGR) of 16 %. The total cumulative installed capacity is projected to record a CAGR of 11 % during the period 2024-35. Solar PV and wind power were significant contributors to the renewable energy sector, accounting for 56 % and 33 % of the total installed capacity in 2024, respectively. The APAC region has emerged as the largest market for solar PV and wind installed capacity, boasting 1.18 TW and 0.67 TW in 2024, respectively. Artificial intelligence is transforming the renewable energy sector by enhancing generation optimization, advancing grid management, and increasing efficiency across multiple systems. AI algorithms possess the capability to forecast renewable energy production, oversee grid operations in real-time, and refine energy storage strategies. These advancements contribute to heightened reliability and efficiency, thereby rendering renewable energy more effective and economical. Looking ahead, the onshore wind sector is forecasted to grow to $186.9 billion (CAGR: 4 %) and the offshore wind sector to $150.4 billion (CAGR: 14 %) by 2030.

Europe remains committed to growing Offshore Wind Energy

Learn more:
dbrs.morningstar.com

Industry News
2025-08-12

A study conducted by Morningstar DBRS makes it very clear: Europe remains an important market for offshore wind with rising relevance over the next few decades as it moves towards meeting its carbon emission reduction goals and increasing its energy independence. This contrasts sharply with the United States' path following President Trump's executive order on January 20, 2025, withdrawing all areas of the U.S. outer continental shelf from Offshore Wind Leasing. Europe has a long history of using offshore wind as part of its energy mix. The world's first offshore wind farm was completed in Denmark in 1991 by Orsted. The project consisted of 11 turbines with total generation capacity of 5 MW. The European offshore wind industry has grown significantly since then with Europe achieving 35 GW of installed generation by the end of the first half of 2024. Europe has a significant share of the offshore wind industry with 38% of the world's offshore wind capacity, with Germany and the U.K. as the main contributors. The European market is significantly larger than the U.S. offshore wind market with the U.S. Energy Information Administration reporting in December 2024 that there are only 130 MW of operating offshore wind projects and 6.9 GW planned by projects by 2027. Offshore wind represents a key part of Europe's goal to transition to renewable electricity sources and to achieve energy independence. Bloomberg NEF (BNEF) forecasts European wind capacity will reach 40 GW in 2025, increasing to 80 GW by 2030 and 274 GW by 2040, with the U.K., Germany, and the Netherlands contributing the most to growth.

PwrSoC Registration is now OPEN!

Learn more:
pwrsocevents.com

Event News
2025-08-11

The PwrSoC Workshop is a leading international event focused on power supply integration technologies, specifically Power Supply on Chip and Power Supply in Package. Co-sponsored by IEEE Power Electronics Society (IEEE PELS) and the Power Sources Manufacturers Association (PSMA), the workshop is held biennially at various locations worldwide, bringing together researchers and engineers from academia and industry to share the latest trends and discuss future directions. The 9th International Workshop on Power Supply on Chip (PwrSoC 2025) will take place from September 24 to 26, 2025, at Seoul National University in Seoul, Korea, with Professor Jaeha Kim serving as the General Chair and Local Host. The program will feature three plenary speeches delivered by distinguished industry leaders, providing valuable insights into the latest advancements in miniaturized and integrated power conversion and power management technologies. The technical program will follow a single-track format, featuring presentations from leading experts in power supply integration. Participants will also have the exclusive opportunity to visit SK Hynix's advanced semiconductor fabrication facility, gaining insights into one of the world's top memory manufacturers and its cutting-edge technologies.

PCIM Asia Shanghai Conference 2025 programme to explore power electronics in AI and e-mobility

Learn more:
pcimasia-shanghai.com

Event News
2025-08-07

The PCIM Asia Shanghai Conference, Asia's foremost academic gathering for the power electronics industry, returns to Shanghai this September. The 2025 programme will unite industry leaders, technical experts and academics to explore advanced solutions and future trends, highlighting developments in cutting-edge technologies such as silicon carbide (SiC), gallium nitride (GaN), motor drives and motion control, and more. Debuting at the conference is the new "Dialogue with Speakers" zone, where dedicated booths will provide a setting for more direct and in-depth interactions between speakers and attendees. Held in conjunction with the PCIM Asia Shanghai exhibition, the PCIM Asia Shanghai Conference addresses key industry topics including motion control systems and power supply solutions. The exhibition, in turn, showcases the latest technologies in power electronics components, power conversion, intelligent motion and more. The combined programme brings together leading specialists from the power electronics sector, application fields, and research institutions worldwide to share their knowledge and discuss the future of the industry.

1200 Volt Family of IGTO(t)

Learn more:
pakal-tech.com

Product Release
2025-08-05

Pakal Technologies announced the commercial launch of its 1200 Volt revolutionary IGTO(t) power semiconductor. The initial product is a Gen 2 1200 Volt, 40 Amp IGTO(t) and is available in a TO-247 package with co-packed diode. The 1200 V IGTO(t) is a direct drop-in upgrade for conventional IGBTs, using the same drivers and controllers and switching mechanism as a 1200 V IGBT. Independent tests confirm this Gen 2 IGTO(t) delivers up to 40% lower conduction losses at full current and 150°C compared to top-tier IGBTs. With this 1200 V conduction loss breakthrough, the IGTO(t) not only beats the best silicon, it also directly challenges (and in many conditions beats) the conduction loss performance of much more expensive Silicon Carbide (SiC) MOSFETS. The 1200 V IGTO(t) unlocks new levels of energy efficiency and cost savings across EVs, renewable energy, industrial automation and more. "Our Gen 2 1200 V device shows remarkable conduction loss advantages that are especially useful for <20 kHz applications." said Dr. Richard Blanchard, co-founder of Pakal Technologies. "Unlike IGBTs, the IGTO(t) device scales easily to much higher voltages. We expect to maintain and extend our high-current conduction loss advantage all the way to 6,500 V." The IGTO(t) is the first new high-voltage silicon power switch since the IGBT changed the game nearly 50 years ago. Pakal created the IGTO(t) to address the multibillion-dollar market gap between legacy silicon IGBTs and more expensive SiC products.

Common Mode Choke

Learn more:
schurter.com

Product Release
2025-08-05

Schurter launched a family of vertically mountable chokes for PCBs. The current-compensated DKCV-1 chokes use nanocrystalline cores and are designed for currents from 0.5 to 10 A. They are suited for EMI suppression in industrial, medical, and test equipment up to 300 VAC/450 VDC. The DKCV-1 chokes can be mounted directly on the PCB with a vertical choke arrangement. All variants of the DKCV-1 family are ENEC, cUR and UR approved and have the same footprint on the PCB. Typical applications include switching power supplies, industrial, medical, laboratory and test equipment.

Ultra-Fast Current Shunt Series

Learn more:
pmk.de

Product Release
2025-08-05

PMK launched its UFCS devices (Ultra-Fast Current Shunts), aiming to set a new industry standard for current measurement in high-performance power electronics. The reason why it is considered to set a standard is described by PMP as follows: "Designed to meet the demands of next-generation systems, UFCS shunts combine >1 GHz bandwidth with ultra-low insertion inductance (<200 pH), enabling unparalleled signal fidelity in the analysis of ultra-fast transient currents." The UFCS shunts are suited for applications involving GaN and SiC power semiconductors, where accurate switching loss measurements and pulse current analysis are critical. Their non-inductive frequency response ensures clean and reliable data acquisition, even in the demanding wide-bandgap environments. For measurements requiring high common-mode rejection, the UFCS can be paired with PMK's FireFly® optically isolated voltage probes. Alternatively, they can be connected directly to any 5 Ω input measuring device for general-purpose use. The first models available in the UFCS series include 11 mΩ, 24 mΩ, and 52 mΩ versions, covering a wide range of applications. 1 mΩ and 5 mΩ versions are said to follow shortly.

Gaining In-Depth High Voltage Relay Switching Expertise

Learn more:
pickeringrelay.com

Industry News
2025-08-03

Pickering Electronics has established its High Voltage Reed Relay Resource Center, an online reference library of technical information for engineers building HV switching systems or looking to develop their knowledge. This digital reference library collects together deep technical expertise and video, application guide and case study resources, authored by subject matter experts from the company's Centre of Excellence for high voltage switching. Pickering has been active in high voltage reed relays for more than half a century, introducing its first HV reed relays in 1970. Pickering's High Voltage Reed Relay Resource Center contains information engineers need to know about high voltage reed relays, including how they work, what to look for when selecting a device, and how to use it to ensure the best performance in your HV switching application. Topics include the construction of a high-voltage reed relay, including the switch blades & gap, and magnetic screening but also AC and DC considerations as well as hot and cold switching. Furthermore, it deals with loads and in-rush currents, test methods and failure modes, including vacuum failure, plating material damage, and breakdown & arcing. On top of the Resource Center answers the question, why reed relays may be a better option for HV applications than competing technologies, such as electromechanical relays (EMRs) & solid-state relays (SSRs).

Power Modules for higher Currents

Learn more:
we-online.com

Product Release
2025-07-30

Würth Elektronik has expanded its MagI³C-VDLM power module series with two new models. With output currents of 4 A and 5 A respectively, they further enhance the performance of the existing portfolio of compact DC/DC power supply modules. The modules are designed for input voltages from 4 to 36 V and come in a space-saving LGA-26 package (11 × 6 × 3 mm³). They provide an output voltage from 1 to 6 V and, like all power modules in the MagI³C-VDLM series, integrate the essential components for a DC/DC power supply in its package: switching regulator with integrated MOSFETs, controller, compensation circuitry, and a shielded inductor. The power modules are claimed to "maintain high efficiency across the entire output current range by automatically switching between operating modes based on load requirements". So, they contribute to a minimal output ripple, which is needed for precise and interference-sensitive applications. Typical applications include point-of-load DC/DC converters, industrial, medical, test and measurement equipment, or for supplying power to DSPs, FPGAs, MCUs, MPUs, and interfaces. The MagI³C-VDLM modules achieve peak efficiencies of up to 96 percent and impress with their EMC performance in accordance with EN55032 Class B / CISPR-32. Additional features include selectable switching frequencies, automatic PFM/PWM transition, and a sync function for synchronizing to individual clock frequencies.

Webinar: How to Test GaN and SiC MOSFET and IGBT Devices

Learn more:
teledynelecroy.com

Event News
2025-07-29

Join Teledyne LeCroy to learn more about how to test and qualify GaN MOSFETs, SIC MOSFETs and Si IGBTs using the double-pulse test circuit and high voltage isolated probes. Learn how you can use your benchtop test instruments to effectively (and safely) analyse your circuits in a qualitative and quantitative manner.

Gate driver photocouplers enhance MOSFETs and IGBTs switching efficiency

Learn more:
toshiba.semicon-storage.com

Product Release
2025-07-29

Toshiba Electronics Europe introduced gate driver photocouplers to control 1 A and 6 A class gate drive currents for small- to medium-capacity MOSFET and IGBT gate drives. The TLP579xH series is suitable for driving SiC MOSFETs and IGBTs in green energy and factory automation applications, including industrial photovoltaic (PV) inverters, uninterruptible power supplies (UPSs), and electric vehicle (EV) charging stations, which operate in harsh thermal environments. All three devices in the TLP579xH series are designed to drive small to medium capacity power devices as well as IGBTs. The TLP5791H has a performance of -1.0/+1.0 A for peak high-level/low-level output current (I_OLH/I_OHL), with an under voltage lock out (UVLO) threshold voltage (V_UVLO+) of 9.5 V (max.), a UVLO threshold voltage (V_UVLO-) of 7.5 V (min.), and a UVLO hysteresis voltage (V_UVLOHYS) of 0.5 V (typ.). With the TLP5794H, the peak output current spans from -6.0/+4.0 A for I_OLH/I_OHL, with a Vsub>UVLO+ of 13.5 V (max.), a V_UVLO- of 9.5 V (min.), and V_UVLOHYS of 1.5 V (typ.). The TLP5795H is capable of -4.5/+5.3 A for peak high-level/low-level output current (I_OLH/I_OHL), with V_UVLO+ of 13.5 V (max.), a V_UVLO- of 11.1 V (min.), and V_UVLOHYS of 1.0 V (typ.). The TLP579xH series is a rail-to-rail output device that enables switching characteristics with less voltage drop from the power supply voltage. It operates within a temperature range of -40 °C to +125 °C and is housed in a SO6L package, featuring a minimum creepage distance of 8.0 mm and an isolation voltage of 5000 V_RMS.

1200 V MOSFETs in a Q-DPAK Package

Learn more:
infineon.com

Product Release
2025-07-29

Infineon Technologies has launched the CoolSiC™ MOSFETs 1200 V G2 in a top-side-cooled (TSC) Q-DPAK package. These devices deliver enhanced thermal performance, system efficiency, and power density. They were specifically designed for demanding industrial applications that require high performance and reliability, such as electric vehicle chargers, solar inverters, uninterruptible power supplies, motor drives, and solid-state circuit breakers. The CoolSiC 1200 V G2 technology enables up to 25 percent lower switching losses for equivalent R_DS(on) devices, thereby increasing system efficiency by up to 0.1 %. Utilizing Infineon's .XT die attach interconnection technology, the G2 devices achieve more than 15 % lower thermal resistance and an 11 % reduction in MOSFET temperature compared to G1 family products. The R_DS(on) values, range from 4 mΩ to 78 mΩ, while the technology supports overload operation up to a junction temperature (T_vj) of 200 °C. The CoolSiC MOSFETs 1200 V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon's broader X-DPAK top-side cooling platform. The standardized package height across all TSC variants – including Q-DPAK and TOLT – is 2.3 mm.

Power Modules

Learn more:
gaia-converter.com

Product Release
2025-07-28

The GRD-12A is a reference design board based on the latest generation of GAIA Converter COTS modules, intended to demonstrate the applicability and performances of converters from the MGDD series. It is a multiple outputs board fully configurable and capable of delivering up to 120 W spread over 3 main output channels and 2 auxiliary channels. It is protected in terms of inrush currents, spikes & surges and provides up to 7 outputs between 3.3 V and 52 V while complying with Mil-Standards 1275 (ground vehicle transients), 704 (airborne input voltage) and 461 (EMI/EMC) as well as ABD100 (aeronautical requirements) and DO-160 (civil aviation). At its input the GRD12-A-M – 120W COTS Power Module with a built-in hold-up function accepts 24/28 V_DC.

Shielded Power Inductor

Learn more:
bourns.com

Product Release
2025-07-28

Bourns introduced its Model SRP1024HMCT shielded power inductor, which is manufactured using a hot press molding process with carbonyl powder. This model is available in a low profile package for the operating temperature range from -40 °C to +125 °C for use e. g. in point-of-load (PoL) converters and data center environments.

TOLT-Packaged 80 V MXT MV MOSFET for E-Scooters and LEVs

Learn more:
magnachip.com

Product Release
2025-07-28

Magnachip Semiconductor released an 80 V MXT MV MOSFET, MDLT080N017RH, featuring a TOLT (TO-Leaded Top-Side Cooling) package. The TOLT-packaged MOSFET delivers a major advancement in thermal management. Unlike conventional TOLL (TO-Leadless) packages that dissipate heat through the bottom, the TOLT package is engineered to release heat directly from the top via a mounted metal heat sink. This structure substantially reduces thermal resistance between the junction and the external environment, making it well-suited for thermally demanding applications, such as e-scooters and LEVs. Simulations and tests conducted by Magnachip demonstrated that this 80 V MV TOLT package solution achieved an average 22 % reduction in junction temperature compared to using standard TOLL packages. This improvement not only extends an application's lifespan, but also enhances the system reliability. Furthermore, the TOLT package enables compact, lightweight application designs thanks to its high power density and efficient thermal flow that. At a V_GS of 10 V the R_DSon is specified with 1.7 mΩ.

Reliable EMC Protection

Learn more:
schurter.com

Product Release
2025-07-25

The extended range of products from Schurter includes high-performance EMC filters, chokes, and pulse transformers for a wide variety of applications – from industrial and medical technology to energy and automation systems. Included are power entry modules with integrated line filters (DG11 with thermal-magnetic circuit breaker), 1- and 3-phase block filters (FPAC RAIL, FMAB NEO, FMBC EP) as well as suppression chokes, magnetically compensated, linear, storage, and linear/saturating types (DKCV-1, DKUH-1), complemented by pulse transformers and customized filters and winding goods. For example, Schurter's single-phase and three-phase EMC filters, with and without IEC power plugs, for PCB or chassis mounting, meet international standards and cover current ranges from 0.5 A to 115 A at voltages up to 520 V. They thus offer reliable protection against conducted interference and contribute significantly to the electromagnetic compatibility of complex systems. The portfolio also includes chokes with SPICE simulation models, which enable precise circuit design even in the early development phase. For control cabinet applications, Schurter offers DIN rail components.

Large-size Ferrite Cores with different Shapes

Learn more:
tdk-electronics.tdk.com

Product Release
2025-07-24

TDK Corporation added large-size ferrite cores with different core shapes. These are used in a range of industrial applications such as motor drives, EV charging stations, various railway/traction applications, power transformers, welding, medical, uninterruptible power supplies (UPS), solar inverters, and other renewable energy applications. These cores allow for optimizing magnetic design for efficiency and thermal performance. The standardized large-size core program contains E, U, I, PM, and PQ cores in the N27, N87, N88, N92, N95, and N97 power materials. Accessories like coil former and mounting hardware are available.

Shielded Power Inductor Series

Learn more:
bourns.com

Product Release
2025-07-24

Bourns announced its SRP4020T series shielded power inductors. This series features a carbonyl powder core with "excellent thermal stability and magnetic performance", making it suitable for demanding environments. Its shielded construction suppresses magnetic interference and enhances Electromagnetic Compatibility (EMC). Offered in a (4.45 x 4.0 mm²), low-profile (1.8 mm) package, the SRP4020T Series supports operating temperatures up to +150 °C. The inductance range for this series is from 0.47 to 10 µH.

Company Location in South Africa added

Learn more:
we-online.com

Industry News
2025-07-24

Another Würth Elektronik branch opened in Brackenfell, Western Cape, South Africa. The location operates under the name Wurth Electronics South Africa (Pty.) Ltd and will serve local customers, but will also be responsible for the markets of Botswana, Mauritius, Namibia, Tanzania and Zambia. Ahmet Çakir, who also heads the branch in Turkey, will take over the management of the new location, under the leadership of Rob Sperring, Vice President for Southern Europe, Middle East and Africa. The Wurth Electronics South Africa (Pty.) Ltd team currently consists of six employees. However, it will soon be expanded. The official opening ceremony for the new location will take place in early 2026. Four EMC seminars held by Würth Elektronik in South Africa's two largest cities, Cape Town and Johannesburg, have already been completed.

Collaboration with SiC-based PHEV Platform expanded

Learn more:
onsemi.com

Industry News
2025-07-24

onsemi announced an expanded collaboration with Schaeffler through a new design win using onsemi's next-generation EliteSiC product line of silicon carbide MOSFETs. The onsemi solution will power the Schaeffler traction inverter for a leading global automaker's plug-in hybrid electric vehicle (PHEV) platform. The semiconductor company claims that "this silicon carbide-based solution offers the lowest on-state resistance to provide highest peak power compared to other SiC solutions in its class". This next step builds on the existing long-term collaboration between onsemi and Schaeffler (formerly Vitesco Technologies), extending the companies' multi-year collaboration in electric mobility solutions.

Simplifying Reverse Battery Polarity and Overvoltage Protection in Automotive Architectures

Learn more:
diodes.com

Product Release
2025-07-23

Diodes Incorporated introduced the AP74502Q and AP74502HQ automotive-compliant 80 V ideal diode controllers, providing protection against reverse connections and voltage transients. Typical applications include ADAS, body control modules, infotainment systems, exterior lighting, and USB charging ports. They also include a load disconnect function in case of overvoltage and undervoltage events, while they are suitable for all 12 V, 24 V and 48 V systems. The AP74502Q and AP74502HQ controllers also support input voltages as low as 3.2 V for operation even during severe cold crank conditions. Both devices share a peak gate turn-off sink current of 2.3 A, enabling rapid turn-off of the external N-channel MOSFETs when required, for example, during overvoltage or undervoltage events. When the charge pump is enabled, the operating quiescent current is 62 µA, and 1 &mirco;A in disabled mode. The AP74502Q features a peak gate source current, typically 60 µA, which provides a smooth start-up with inherent inrush current control. Both, AP74502Q and AP74502HQ are available in the industry-standard SOT28 package with an operating temperature range from -40 °C to +125 °C.

Power MOSFETs in specific Package

Learn more:
toshiba.semicon-storage.com

Product Release
2025-07-20

Toshiba Electronics Europe launched two N-channel power MOSFETs, the 80 V TPM1R908QM and the 150 V TPM7R10CQ5. These latest offerings use Toshiba's SOP Advance(E) package, designed to significantly enhance performance in switched-mode power supplies for demanding industrial equipment, including data centres and communication base stations. This SOP Advance(E) package is said to "mark a substantial improvement over Toshiba's existing SOP Advance(N) package, reducing package resistance by approximately 65 % and thermal resistance by approximately 15 %". The 80 V TPM1R908QM exhibits a reduction in drain-source on-resistance of approximately 21 % and channel-case thermal resistance of approximately 15 % when compared to Toshiba's existing product, the TPH2R408QM, of same voltage rating. Similarly, the 150 V TPM7R10CQ5 achieves approximately 21% lower R_DS(ON) and approximately 15% lower R_th(ch-c) than Toshiba's existing TPH9R00CQ5, also at the same voltage. The TPM7R10CQ5 is equipped with a high speed body diode for increased efficiency in synchronous rectification. Toshiba also provides a G0 SPICE model for quick circuit function verification, alongside highly accurate G2 SPICE models that precisely reproduce transient characteristics.

Professorship to Accelerate Wide Bandgap Semiconductor Research

Learn more:
nexperia.com

Industry News
2025-07-18

Global semiconductor manufacturer Nexperia and the Hamburg University of Technology (TU Hamburg) have launched an endowed professorship in power electronic devices – a crucial field for the advancement of energy-efficient technologies. The position, held by Prof. Dr.-Ing. Holger Kapels will drive research into next-generation semiconductor components and train highly skilled engineers at TU Hamburg’s School of Electrical Engineering, Computer Science and Mathematics. As part of this initiative, Prof. Kapels will also lead the newly founded Institute for Power Electronic Devices. In his inaugural lecture, titled "Innovative Power Semiconductor Devices as a Key Technology for an Electrified Future," Prof. Kapels outlined how compound semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) are enabling transformative improvements in energy efficiency – particularly in electric vehicles, industrial systems, and data centers. Wide bandgap (WBG) materials such as SiC, GaN, and aluminum scandium nitride (AlScN) allow for higher switching frequencies, lower conduction losses, and more compact device footprints. compared to traditional silicon. The new institute will focus on power semiconductors based on Silicon, SiC, GaN and aluminum scandium nitride (AlScN), new device architectures, including vertical GaN structures and machine-learning-based fault prediction systems. Additional research priorities include modeling the reliability and ruggedness of power devices under extreme operating conditions.

Two-Component Thermal Gap Filler and CIP Material

Learn more:
ph.parker.com

Product Release
2025-07-17

The Chomerics Division of Parker Hannifin Corporation introduced a two-component (2k) dispensable thermal gap filler and cure-in-place (CIP) material offering 3.5 W/m-K thermal conductivity. THERM-A-GAP™ CIP 35E provides an alternative to hard-curing dispensable materials and an improvement over application methods associated with thermal gap pads. After curing, THERM-A-GAP CIP 35E serves as a low-hardness (50 Shore 00) gap pad that conforms to irregular shapes and maintains effective contact without transmitting compressive forces to adjacent electronics. Its ability to cure into complex geometries is suited for the cooling of multi-height components on a printed circuit board (PCB) without the expense of a moulded sheet. The product also offers vibration damping attributes, while the dielectric strength is 8 kVAC/mm (ASTM D149 test method) and the volume resistivity is 10¹³ Ωcm (ASTM D257). At 1000 kHz its dielectric constant is specified 8.0 dielectric (ASTM D150); and the dissipation factor at 1,000 kHz is 0.009 (Chomerics CHO-TM-TP13).

Partnership on Silicon Carbide Solutions for Power Management

Learn more:
microchip.com

Industry News
2025-07-17

Microchip Technology announced that under a new partnership agreement with Delta Electronics the companies will collaborate to use Microchip’s mSiC™ products and technology in Delta’s designs. The synergies between the companies aim to accelerate the development of innovative SiC solutions, energy-saving products and systems that enable a more sustainable future. Delta intends to leverage Microchip’s experience and technology in SiC and digital control to accelerate time to market of its solutions for high-growth market segments such as AI, mobility, automation and infrastructure. This agreement prioritizes the companies’ resources to validate Microchip’s mSiC solutions to fast-track implementation in Delta’s designs and programs. Other key advantages of the agreement are top-tier design support including technical training as well as insight into R&D activities and early access to product samples.

150 V and 200 V MOSFETs “with industry-leading Figures of Merit”

Learn more:
idealsemi.com

Product Release
2025-07-17

iDEAL Semiconductor’s SuperQ™ technology has entered full production, with the first products being 150 V MOSFETs. A family of 200 V MOSFETs is sampling. SuperQ is said to be “the first significant advance in silicon MOSFET design in more than a quarter of a century and delivers unmatched performance and efficiency in silicon power devices”. It almost doubles the n-conduction region (up to 95%) and reduces switching losses by up to 2.1x versus competing devices while operation at up to 175 °C junction temperature. The first product in iDEAL’s 150 V MOSFET series, iS15M7R1S1C, is a 6.4 mΩ MOSFET. It is available immediately in a 5 x 6 mm² PDFN package. The SMT package includes exposed leads to simplify assembly and improve board level reliability. The 200 V family includes the iS20M6R1S1T, a 6.1 mΩ MOSFET in a 11.5 x 9.7 mm² TOLL package. This has an R_DSon of 6.1 mΩ, which is claimed to be “10% lower than the current industry leader and 36% lower than the next best competitor”. The company is also sampling 200 V MOSFETs in TOLL, TO-220, D2PAK-7L and PDFN packages. 250V, 300 V and 400 V MOSFET platforms are promised to be coming soon.

Bipolar Junction Transistors in clip-bonded FlatPower Packages

Learn more:
nexperia.com

Product Release
2025-07-16

Nexperia expanded its bipolar junction transistor (BJTs) portfolio by introducing the MJPE-series with 12 MJD-style BJTs in clip-bonded FlatPower (CFP15B) packaging. Compared to traditional DPAK-packaged MJD transistors, MJPE-parts in CFP15B deliver significant board space savings and cost advantages without compromising performance. Six of these devices are automotive-qualified (e.g. MJPE31C-Q) and six industrial-grade types (e.g. MJPE44H11), with V_CEO ratings of 50 V, 80 V, and 100 V, and collector currents of 2 A, 3 A, and 8 A. Both NPN and PNP variants are available. Used in diverse applications such as power supplies for battery management systems, on-board chargers in electric vehicles, and backlighting for video displays, the CFP15B-packaged BJTs maintain equivalent thermal performance (up to 175 °C operation for automotive applications) while offering a 53% smaller soldering footprint. Furthermore, the clip technology of the CFP15B package supports specific mechanical robustness while also enhancing the electrical and thermal performance of these devices.

30 Years of Openair-Plasma Technology

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plasmatreat.com

Industry News
2025-07-16

In early July Plasmatreat celebrated the 30th anniversary of the patent application for its Openair-Plasma technology with its Technology Days 2025 at the headquarters in Steinhagen, Germany. Due to its process stability, efficiency, environmental friendliness, and ease of integration into production environments, the Openair-Plasma technology has changed numerous industrial processes worldwide. More than 200 guests and 16 industry partners joined the Plasmatreat team for the celebration. This plasma technology is used to give materials special properties for further processing including ultra-fine cleaning, activation, reduction, and coatings for a wide range of industrial applications. Plasmatreat technology is currently used in more than 100 automotive and battery production applications. E. g. PlasmaPlus PT-Bond technology serves as an environmentally friendly bonding agent that is often used to bond different materials in a stable, weather-resistant way. Eight interactive workshops complemented the event. For example, the workshop "REDOX effect: Reduction to High-Performance Coatings” showed how oxidized and contaminated metal surfaces are cleaned in the semiconductor industry to meet the strictest standards for manufacturing electronic components. Plasma systems and reduction were also demonstrated live.

TVS Diodes cut Clamping Voltage

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littelfuse.com

Product Release
2025-07-15

Littelfuse launched the 5.0SMDJ-FB TVS Diode Series, a 5000 W surface-mount solution in a DO-214AB package engineered to protect sensitive DC power lines from overvoltage transients. This series incorporates foldback technology, which delivers up to 15% lower clamping voltage (V_C) compared to traditional solutions, while maintaining Breakdown Voltage (V_BR) above the Reverse Standoff Voltage (V_R). It is a drop-in replacement to legacy 5.0SMDJ series with the same DO-214AB (SMC) footprint. These devices protect DC power lines across a variety of demanding applications, including Power over Ethernet (PoE) systems, AI and data center servers, ICT equipment power supplies and industrial DC power distribution.

1 W Current Sense Chip Resistor Series

Learn more:
seielect.com

Product Release
2025-07-14

Stackpole Electronics expanded the CSSH Series of current sense chip resistors with a 0805 version for high power density applications. This component is designed to be used in power modules, frequency converters, battery management systems, as well as automotive and EV controls. The CSSH0805 delivers 1 W power handling in a 0805 footprint. With resistance values as low as 0.5 milliohm and TCR from 50 to 100 ppm, it matches the performance of larger 1206 and 2010 resistors.

Jennifer Lloyd Announced Chief Executive Officer

Learn more:
power.com

People
2025-07-14

Power Integrations announced that Jennifer A. Lloyd, PhD will be the company’s next chief executive officer, succeeding Balu Balakrishnan, who has served as CEO since 2002. A former member of Power Integrations’ board of directors, Dr. Lloyd has been reappointed to the company’s board. Dr. Lloyd holds doctoral, master’s and bachelor’s degrees in electrical engineering and computer science from the Massachusetts Institute of Technology. Author of numerous technical papers and recipient of eight U.S. patents, she has also been active in the IEEE community, having served on the technical program committee for the International Solid-State Circuits Conference (ISSCC), the Custom Integrated Circuits Conference (CICC) and the VLSI Symposia (VLSI). Mr. Balakrishnan plans to serve as executive chairman of Power Integrations’ board of directors for approximately six months to ensure a smooth leadership transition; he is expected to remain a non-executive member of the board thereafter. Bala Iyer will remain in the role of lead independent director.

dataTec Innovation Day

Learn more:
datatec.eu

Event News
2025-07-11

dataTec and selected partner companies are hosting an Innovation Day on September 25, 2025, in Stuttgart - bringing together theory, practice, and product worlds. Experience the latest developments up close and discover how ideas turn into real solutions. A day full of knowledge, exchange, and hands-on experience. Whether you're looking to dive deep into a specific topic or gain a broad overview, Innovation Day offers valuable insights for engineers, technicians, developers, users, and decision-makers.

47 µF Multilayer Ceramic Capacitor in 0402-inch Size

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murata.com

Product Release
2025-07-10

Murata has begun “the world’s first mass production of the 0402-inch size (1.0 × 0.5 mm²) multilayer ceramic capacitors (MLCC) with a capacitance of 47 µF. The devices are available in two variants with different temperature characteristics. Compared to Murata’s conventional 0603-inch size product with the same capacitance, this new capacitor reduces mounting area by approximately 60 %. Additionally, it delivers about 2.1 times the capacitance of Murata’s previous 22 µF product in the same 0402-inch size. The MLCC is available in two variants – the X5R (EIA) GRM158R60E476ME01 with an operating temperature range of -55 to +85 °C, and the X6S (EIA) GRM158C80E476ME01 with an operating temperature range of -55 to +105 °C. Both devices feature a ±20% tolerance and rated voltage of 2.5Vdc.

Semi-Shielded Power Inductors

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bourns.com

Product Release
2025-07-10

Bourns has added five product series to the existing Bourns SRN-BTA family of semi-shielded power inductors. The semi-shielded construction combines the advantages of both non-shielded and shielded inductor designs. The five additional devices use bottom-soldered lead-wires for increased mechanical strength and stability in applications in automotive systems, DC/DC converters, and power supplies across consumer, industrial and telecom electronics. These models are AEC-Q200 compliant and automotive grade.

Level 3 SPICE Models featuring enhanced Simulation Speed

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rohm.com

Product Release
2025-07-10

ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs were precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement. The L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase. By the end of April 2025, ROHM has released 37 L3 models for its 4^th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.

1200 V SiC Schottky Diodes

Learn more:
nexperia.com

Product Release
2025-07-10

Nexperia announced the addition of two 1200 V 20 A silicon carbide Schottky diodes. The PSC20120J and PSC20120L have been designed to address ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are suited for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications. These Schottky diodes deliver temperature-independent capacitive switching and zero recovery behavior while it is claimed that the “switching performance is almost entirely independent of current and switching speed variations”. This PSC20120J is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount device power plastic package, while the PSC20120L is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package suited for operating temperatures up to 175 °C.

GaN-Based Motor Drive Reference Design for Humanoid Robots

Learn more:
epc-co.com

Product Release
2025-07-10

Efficient Power Conversion Corporation (EPC) introduces the EPC91118, which is claimed to be “the first commercially available reference design to integrate gallium nitride (GaN) IC technology for humanoid robot motor joints”. Optimized for space-constrained and weight-sensitive applications such as humanoid limbs and compact drone propulsion, the EPC91118 delivers up to 15 A_RMS per phase from a 15 V to 55 V DC input in a compact circular form factor. At the heart of the EPC91118 is the EPC23104 ePower™ Stage IC, a monolithic GaN IC that enables higher switching frequencies and reduced losses. The GaN-based power stage is combined with current sensing, a rotor shaft magnetic encoder, a microcontroller, RS485 communications, and 5 V and 3.3 V power supplies - all on a single board that fits entirely within a 32 mm diameter footprint. Each of the phases of a 3-phase BLDC motor can be driven with 15 A_RMS at a PWM frequency of 100 kHz with 50 ns dead time. The fully integrated board includes a controller, sensor and power conversion and uses MLCC-only DC link capacitors to reduce size and to increase liability. While the inverter has a diameter of 32 mm, the external frame’s diameter is 55 mm.

Compact MOSFET for Fast Charging Applications

Learn more:
rohm.com

Product Release
2025-07-08

ROHM has developed a 30 V N-channel MOSFET named AW2K21 in a common-source configuration that achieves "an industry-leading ON-resistance of 2.0 mΩ (typ.) in a compact 2.0 mm × 2.0 mm package". Compact devices featuring large-capacity batteries, such as smartphones, need fast charging functionalities requiring bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. The maximum current rating for these applications is 20A, with a breakdown voltage between 28 V and 30 V, and an ON-resistance of 5 mΩ or less. The AW2K21 consists of two MOSFETs integrated into a single package, allowing a single part to support bidirectional protection applications. Application examples are smartphones, VR headsets, compact printers, tablets, wearables, LCD monitors, laptop computers, portable gaming consoles or drones.

Avnet announces Gilles Beltran as new President

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avnet.com

People
2025-07-07

Avnet has appointed Gilles Beltran as President of Avnet EMEA. Currently President of Avnet Silica, one of Avnet’s European semiconductor specialist divisions, Gilles Beltran will be succeeding Slobodan Puljarevic and Mario Orlandi, who have co-led the EMEA region with distinction for seven years. As the EMEA President, Gilles Beltran will have the Presidents of the Avnet Abacus, EBV Elektronik, and Avnet Silica business units reporting to him. Gilles Beltran joined Avnet Silica in 2002, bringing more than two decades of company-specific experience and know-how to this new role – including four years as President of Avnet Silica.

Supervisory Board appoints Alexander Gorski Chief Operations Officer

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infineon.com

People
2025-07-07

Dr. Rutger Wijburg, Member of the Management Board and Chief Operations Officer (COO) of Infineon Technologies, will resign from his position at the end of the fiscal year on 30 September 2025 at his own request and will retire after being a member of the Management Board of Infineon Technologies and Chief Operations Officer since April 2022. The Supervisory Board has appointed Alexander Gorski as his successor, effective as of 1 October 2025. Alexander Gorski is currently Executive Vice President and Head of Frontend Operations at Infineon and will be responsible for Operations, Procurement, Supply Chain and Quality Management in his new position as COO. His mandate as Chief Operations Officer will last for three years as is customary for first appointments. As Head of Backend and later as Head of Frontend Operations, Alexander Gorski has strategically developed Infineon's manufacturing landscape over the last few years. After completing his MBA at the University of Regensburg, he began his career at Infineon (until 1999 Siemens) in 1998 and subsequently took on various management positions in the areas of Operations, Supply Chain and Sales. Alexander Gorski worked for a solar company as a board member and managing director for seven years. He returned to Infineon in 2016 as COO of the Power & Sensor Systems division, becoming Head of Backend in 2021 and Head of Frontend in 2024.

ESD Protection Diodes for 48 V EV Communications Networks

Learn more:
nexperia.com

Product Release
2025-07-02

Nexperia introduced "the industry's first ESD diodes designed to protect 48 V automotive data communications networks against the destructive effects of electrostatic discharge (ESD) events". These six AEC-Q101 qualified devices covers the required higher reverse working maximum voltage (V_RWM) for increasingly common 48 V board nets. This saves PCB space and system cost while maintaining signal integrity even at higher data rates. While data communications protocols like CAN and CAN-FD, as well as LIN and FlexRay have been around for several decades, their proven reliability in lower speed applications means they continue to feature in even the most recent automobiles, including (H)EVs. However, unlike conventional internal combustion engine powered vehicles that have a 12 V battery, or commercial vehicles that feature a 24 V battery, the higher efficiency requirements of EVs and HEVs mean they are increasingly moving towards using a 48 V battery to power various electrical systems, including these legacy communications networks. The family consists of ESD diodes with 54 V (PESD2CANFD54VT-Q and PESD2CANFD54LT-Q), 60 V (PESD2CANFD60VT-Q and PESD2CANFD60LT-Q) and 72 V (PESD2CANFD72VT-Q and PESD2CANFD72LT-Q) maximum V_RWM. These devices with a capacitance down to 3.4 pF are packaged in a standard SOT23 package. The optimized capacitance ensures that signal integrity is not impacted even in higher-speed protocols like CAN-FD.

Steve Sanghi to Continue as CEO and President

Learn more:
microchip.com

People
2025-07-02

Microchip Technology Incorporated announced that Steve Sanghi has agreed to continue to serve as the company's Chief Executive Officer and President on a permanent basis. Mr. Sanghi had been serving in such roles on an interim basis since November 2024. Mr. Sanghi will also continue to serve as Chair of the Microchip Board of Directors. Prior to his retirement as Microchip's CEO in 2021, Mr. Sanghi had served as Microchip's CEO for almost 30 years. Mr. Sanghi commented, "I have been a leader of Microchip for over 30 years and look forward to continuing to serve the company on a long-term basis. Although several of the elements of our recovery plan have been completed or substantially implemented, some of the other elements of the plan, such as achieving our long-term operating model, will require sustained efforts. I am thankful that the Board is entrusting me to continue to guide the company towards achievement of its goals."

Acquisition to expand T&M Portfolio for Power Electronics

Learn more:
rohde-schwarz.com

Industry News
2025-07-02

Rohde & Schwarz has acquired ZES ZIMMER Electronic Systems GmbH. The privately owned company based in Oberursel/Germany, has been designing, developing and manufacturing high-precision power measurement equipment for four decades. The acquisition complements the Rohde & Schwarz (R&S) test and measurement product portfolio and is considered by R&S to be "an important step that contributes to the company's long-term growth strategy and will benefit the customers of both companies". The family owned ZES ZIMMER Electronic Systems with around sixty employees will be fully integrated into the Rohde & Schwarz group. The location will be retained and will continue to be used for power measurement equipment.

Series of DC Energy Meters for Fast and Megawatt EV Chargers

Learn more:
lem.com

Product Release
2025-07-01

LEM introduced the DCES600 and DCES1500 meters to enable DC charging infrastructure manufacturers to design both fast and megawatt charging solutions, with kilowatt-hour (kWh) billing services in applications up to e-truck charging. They are designed to achieve class B accuracy at charger level with currents of up to 1500 A, at operating temperatures from –40 °C to +85 °C without derating. Their accuracy is maintained across the entire current range, for precise measurements throughout the full charging cycle, from high currents at the start to low currents near completion. Designers can access the DCES meters over an RS485 communication interface that provides cybersecurity features. These features include authentication of measurements using digital signatures, and facilities that enable secure remote maintenance and firmware updates. LEM is also offering a set of application programming interfaces (APIs) for software integration, and other software tools to ease testing and product integration. The DCES meters are available with an optional remote display unit, the RDU, which can be mounted on a front panel, DIN rail, or base plate without needing additional connections, such as communications lines or power sources, other than its link to the DCES meters. The devices offer real-time reporting of voltage, current, temperature and energy. LEM is now in the process of the certification of the DCES series by the end of the year. The DCES meters will then be compliant with European regulations such as MID 2014/32/EU, the EU's Directive on measuring instruments, and with Eichrecht, the German calibration law.

Board-mount EMI Filters

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lambda.tdk.com

Product Release
2025-07-01

TDK Corporation introduced the TDK-Lambda RGF board-mount EMI filters. Suitable for power supplies with high input current requirements, these 20 and 40 A filters are designed to provide differential mode filtering. The RGF filters are encapsulated for protection in harsh environments, measure 52.8 x 35.2 x 12.7 mm³ in size, and feature a 5-sided metal case. The design includes two threaded and two non-threaded mounting holes, suited for cooling in both conduction and convection-cooled systems. Applications include harsh industrial, commercial-off-the-shelf (COTS), test and measurement, communications, broadcast, and robotics. The input voltage ranges from 0 to 80 V and withstands input transients of up to 100 V for 100 ms durations. The operating case temperature is between -40 to +120 °C, with a qualified Thermal Cycling Test (TCT) of 700 cycles, or -40 to +125 °C with a 60 °C/minute ramp, and a 30 minute dwell time. The RGF filters are compliant to MIL-STD-810G 516.6 Procedure I & IV for shock and MIL-STD-810G 514.6 Procedure I, Cat 10 for vibration.

DC Meters for High-Power and Megawatt Charging

Learn more:
isabellenhuette.com

Product Release
2025-07-01

Isabellenhütte introduces the IEM-DCR, the second generation of DC meters that meet the requirements of accurate energy measurement for charging infrastructure and legally compliant billing. Isabellenhütte currently offers several versions of the DC meter. The IEM-DCR-125, with a current measurement range of 125 A and voltage of 1,000 V, is suitable for DC wall boxes. The IEM-DCR-1000, with up to 1,000 A and an extended voltage range of 1,500 V, is designed for high-power charging up to 1.5 MW. It is claimed to be "the first meter on the market to cover the 1,500 V voltage class". The IEM-DCR-1500, with 1,500 A and also a voltage range up to 1,500 V, is suited for megawatt charging applications and is currently undergoing certification. The IEM-DCR meters consist of separate display and sensor units for direct integration into charging stations. A further development compared to the first generation of meters is a CAN interface for the transmission of real-time measurement data (current, voltage, temperature and power). In addition, this generation allows bi-directional measurements and the creation of charging transactions in OCMF format. The energy meters also offer two options for compensating for cable losses. The IEM-DCR-125 and IEM-DCR-1000 have been certified and meet Accuracy Class B (EN 50470) and Class 1 (IEC 62053-41). In addition to the certification under German calibration law, the meters are also certified under the EU Measuring Instruments Directive (MID).

Joint 200 mm GaN Production planned

Learn more:
navitassemi.com

Industry News
2025-07-01

Navitas Semiconductor announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC), to start production and continue development of 200 mm GaN-on-silicon technology. Navitas' GaN IC portfolio is expected to use Powerchip’s 200 mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has been operational since 2019 and supports various high-volume manufacturing processes for GaN, ranging from micro-LEDs to RF GaN devices. Powerchip’s capabilities include a 180 nm CMOS process which is claimed to offer “smaller and more advanced geometries, which bring improvements in performance, power efficiency, integration, and cost”. Powerchip is expected to manufacture Navitas’ GaN portfolio with voltage ratings from 100 V to 650 V, supporting the growing demand for GaN for 48 V infrastructure, including hyper-scale AI data centers and EVs. The partnership is expected to “strengthen supply chain, drive innovation, and improve cost efficiency - supporting GaN’s ramp into AI data centers, EVs, solar, and home appliances”. Qualification of initial devices is expected in Q4/2025. The 100 V family is expected to start production first at Powerchip within the first six months of 2026, while the company expects 650 V devices will transition from Navitas’ existing supplier, TSMC, to Powerchip over the next 12-24 months.

GaN FETs for High-Density Power Conversion

Learn more:
renesas.com

Product Release
2025-07-01

Renesas introduced three high-voltage 650 V GaN FETs for AI data centers and server power supply systems including the 800 V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures. The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices are based on low-loss d-mode technology and claimed to "offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings". Moreover, they are marketed to "minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4 V threshold voltage, which is not achievable with today's enhancement mode (e-mode) GaN devices". Built on a die that is 14 percent smaller than the previous Gen IV platform, the Gen IV Plus products achieve a lower R_DS(on) of 30 mΩ, reducing on-resistance by 14 % and delivering a 20 % improvement in on-resistance output-capacitance-product figure of merit (FOM). These features make the Gen IV Plus devices suitable for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades.

Power Management IC Textbook

Learn more:
wiley.com

Industry News
2025-06-27

Wiley-IEEE Press has published "Design of Power Management Integrated Circuits" by Bernhard Wicht. Spanning 457 pages, this book delivers an in-depth exploration of both foundational principles and cutting-edge innovations in power management integrated circuits (PMICs). It covers key functions such as power stages, gate Drivers, Semiconductor Devices, and Integrated Passives, and extends to LDOs, Charge Pumps, and various DC-DC Converters. A key feature of the text is its extensive collection of real-world examples, case studies, and exercises aimed at enhancing the understanding of complex design concepts and providing extensive guidance for electronics engineers. Bernhard Wicht, a Full Professor at Leibniz University Hannover, Germany, brings extensive experience from both the semiconductor industry and academia as well as contributions as part of the ISSCC Technical Program Committee and as an IEEE Distinguished Lecturer. As a guide, this publication is intended for designers, engineers, and students eager to deepen their PMIC expertise and drive advancements in high-performance computing, IoT, mobility, and renewable energy sectors.

"MLCCs with the Industry's highest Capacitance at 100 V for Commercial Applications in the 1608 Case Size"

Learn more:
tdk.com

Product Release
2025-06-26

TDK Corporation has expanded its C series for commercial multilayer ceramic capacitors (MLCCs) to 1 µF at 100 V in the 1608 size (1.6 mm x 0.8 mm x 0.8 mm – L x W x H), with X7R characteristics. This is claimed to be "the industry's highest capacitance for a 100-V-rated product in this size and this temperature characteristic". "This 100-V product of the C series achieves ten times the capacity of conventional products of the same size". Main applications are input capacitors for power supply ICs used in commercial and industrial 48-V systems, etc.

Off-the-Shelf Radiation-Hardened 15 W DC/DC Power Converter for Space Applications

Learn more:
microchip.com

Product Release
2025-06-26

Microchip Technology announced the SA15-28 off-the-shelf radiation-hardened DC/DC 15 W power converter with a companion SF100-28 EMI filter that are designed to meet MIL-STD-461 specifications. This space-grade power device is a standard, non-hybrid DC/DC isolated power converter with a companion electromagnetic interference (EMI) filter that operates from a 28 V satellite bus in harsh environments. The SA15-28 is available with 5 V triple outputs that are usable with point-of-load converters and LDO linear regulators to power FPGAs and MPUs. The SA15-28 weighs 60 g and operates in the temperature range from -55 °C to +125 °C while offering a radiation tolerance up to 100 krad TID. The SF100-28 EMI noise suppression filter can be used with numerous power converters with a total output power of up to 100 W. For added flexibility in space applications, the SA15-28 and SF100-28 are fully compatible with Microchip's existing SA50 series of power converters and SF200 filter.

Power Supply Unit for Flux Gate Technology Current Transducers

Learn more:
danisense.com

Product Release
2025-06-26

Danisense has introduced the DSSIU-1-V, a low-noise power supply and interface unit designed to support a range of its flux gate current transducers (DCCTs). Featuring an industry-standard D-sub-9 connector, the DSSIU-1-V unit measures 130 mm x 116 mm x 56 mm and is equipped with an integrated Voltage Output Module (VOM), which precisely converts the measured current into a voltage output via a BNC connector. The DSSIU-1-V supports both 1 V and 10 V output options with its +/-15 V/1.2 A DC supply output generated from a universal mains input between 110 and 220 V_AC. Main target applications include flux gate DCCTs, hall effect DCCTs, electric vehicle test benches, power measurement and power analysis, current calibration purposes as well as precision current sensing.

"World's First 10 µF / 50 V_DC MLCC in 0805-inch Size for Automotive Applications"

Learn more:
murata.com

Product Release
2025-06-26

Murata has announced the GCM21BE71H106KE02 multilayer ceramic capacitor (MLCC) has entered mass production. The device is “the world's first 0805-inch size (2.0mm x 1.25 mm) MLCC to offer a capacitance of 10 µF with a 50 VDC rating and is specifically engineered for automotive applications”. Designed for 12 V automotive power lines, the GCM21BE71H106KE02 capacitor leverages Murata’s proprietary ceramic material and thinning technologies to help engineers to save PCB space and reduce the overall capacitor count. It offers roughly 2.1 times the capacitance of Murata’s previous 4.7 µF / 50 V_DC product, despite sharing the same physical size. Furthermore, compared to the previous 10 µF / 50 V_DC MLCC in the larger 1206-inch size (3.2 mm x 1.6 mm), the MLCC occupies approximately 53 % less space, providing substantial space savings for automotive applications.

Digital Controller for GaN Totem Pole PFC

Learn more:
wise-integration.com

Product Release
2025-06-26

Wise Integration release to production its first fully digital controller, WiseWare® 1.1 (WIW1101) based on the MCU 32 bits. This device enables high-frequency operation up to 2 MHz, unlocking new levels of power density, efficiency, and form factor in compact AC/DC power converters. Unlike legacy analog solutions, WiseWare 1.1 leverages the speed and switching capabilities of GaN through a proprietary digital control algorithm in a MCU 32 bits, that enables zero voltage switching (ZVS) across all power transistors. Designed specifically for totem pole power-factor correction (PFC) architectures in critical-conduction mode (CrCM), this controller allows engineers to reduce the size, weight, and thickness of magnetic components while maintaining >98 percent efficiency. It supports a power range from 100 W to 1.5 kW, making it suitable for a several applications requiring both compactness and high energy efficiency. Designed with flexibility in mind, WiseWare 1.1 works seamlessly with standard GaN across the full R_DS(on) spectrum. The minimum standby power consumption is 18 mW.

Isolated Gate Driver IC Optimized for High-Voltage GaN Devices

Learn more:
rohm.com

Product Release
2025-06-25

ROHM has developed an isolated gate driver IC – the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. The BM6GD11BFJ-LB utilizes proprietary on-chip isolation technology to reduce parasitic capacitance, enabling operation up to 2 MHz. This maximizes the high-frequency switching capabilities of GaN devices. This contributes not only to greater energy efficiency and performance in applications but also reduces mounting area by minimizing the size of peripheral components. At the same time, CMTI (Common-Mode Transient Immunity – an indicator of noise tolerance in noise isolated gate driver ICs) has been increased to 150 V/ns – 1.5 times higher than conventional products – preventing malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65 ns, which is 33% less than conventional products. With a gate drive voltage range of 4.5 V to 6.0 V and an isolation voltage of 2500 V_rms, the BM6GD11BFJ-LB is designed to fully support a wide range of high-voltage GaN devices, including ROHM's 650 V EcoGaN™ HEMT. The output-side current consumption is 0.5 mA (max). Typical application are industrial equipment like Power supplies for PV inverters, ESS (Energy Storage Systems), communication base stations, servers, and industrial motors as well as consumer devices like white goods, AC adapters (USB chargers), PCs, TVs, refrigerator and air conditioners.

Electroactive Polymers for Heating and Cooling

Learn more:
iap.fraunhofer.de

Industry News
2025-06-25

Research scientists at Fraunhofer IAP have developed electrocaloric polymer films with a very low thickness of only four micrometers and processed them into multilayer components. In the future, they will be used in various systems for heating and cooling. For example, in heat pumps for temperature control in vehicle interiors, battery modules, electronic components, control cabinets, or laser systems. Applications include electromechanical sensors and actuators for applications in soft robotics and automation, sound and vibration detectors, ultrasonic transducers, pyroelectric layers for infrared sensors, and electrocaloric materials for heating and cooling. Electrocaloric polymers react to changes in electrical voltage with changes in temperature: the sudden application of an electric field leads to a specific, sudden rise in temperature, which increases the greater the change in the electric field. This is due to polar structures in the material, which are forced into an orderly alignment by the electric field and release energy in the process. Conversely, they absorb energy again as soon as the electric field is switched off. The material cools down abruptly to the same extent. For the technical use of electrocaloric materials in heating and cooling systems, these processes must be repeated at high frequencies and controlled in such a way that heating and cooling take place in different environments. Only then can a heat pump with usable, permanently warm and cold areas be created. Several properties of the material are crucial for high electrocaloric performance, including a large change in electrical polarization, high dielectric strength, low thermal losses, and good mechanical stability.

Power Inductors in a Performance Version

Learn more:
we-online.com

Product Release
2025-06-25

The WE-XHMI Performance series extends Würth Elektronik's family of power inductors with improved versions in sizes 1010, 1060, 6030, and 6060. The magnetically shielded flat-wire inductors support high saturation currents while reducing DC. The WE-XHMI Performance SMT inductors show the ability to withstand saturation currents of up to 114 A while also handling high transient current peaks. This makes them particularly suitable for use in DC/DC converters, point-of-load converters and high-current filters, as well as in industrial computers, mainboards and graphics cards. These latest improvements now enable Würth Elektronik to meet the growing demand for low-loss solutions at high switching frequencies and maximum power density, driven by GaN and SiC transistor technologies. The new generation of molded WE-XHMI flat-wire inductors is claimed to "outperform other products of the same size by offering the lowest R_DC combined with low AC losses". Compared to the standard products in the series, the "Performance" models feature an extended inductance range, a higher operating temperature (-55 °C to +150 °C), up to 30 percent lower resistance, and up to 50 percent higher rated currents. Thanks to their significantly reduced DC losses compared to inductors of the same size, they enable more efficient operation with lower self-heating. Low DC losses at higher rated currents help raise the efficiency of switching regulators.

Power Inductors in a Performance Version

Learn more:
we-online.com

Product Release
2025-06-25

The WE-XHMI Performance series extends Würth Elektronik's family of power inductors with improved versions in sizes 1010, 1060, 6030, and 6060. The magnetically shielded flat-wire inductors support saturation currents of up to 114 A while reducing DC losses for even more efficient operation. They are suitable e. g. for use in DC/DC converters, point-of-load converters and high-current filters, as well as in industrial computers, mainboards and graphics cards. Compared to the standard products in the series, the "Performance" models feature an extended inductance range, a higher operating temperature (-55 °C to +150 °C), up to 30 percent lower resistance, and up to 50 percent higher rated currents at reduced DC losses compared to inductors of the same size.

180 W GaN Buck Converter Evaluation Board for USB PD Applications

Learn more:
epc-co.com

Product Release
2025-06-24

Efficient Power Conversion Corporation (EPC) introduced the EPC91109, a high-performance evaluation board designed to demonstrate the benefits of eGaN® FETs in a compact, thermally efficient, two-phase synchronous buck converter. Targeting USB Power Delivery (USB-PD 3.1) applications up to 180 W, the EPC91109 is optimized for space- and power-constrained designs such as laptops, portable devices, and battery-powered systems. The EPC91109 combines four 50 V-rated EPC2057 GaN FETs with the Analog Devices LTC7890, a dual-phase buck controller, to deliver output voltages of 12 V, 16 V, or 20 V from an input range of 20 V to 36 V. In two-phase interleaved mode, it supports output currents up to 14.3 A - matching the full 180 W USB-PD power envelope at 12 V output from a 36 V source. The EPC91109 Evaluation Board: is configurable to operate in either two-phase or single phase, dual-output mode, operates with a low-profile inductor of 3 mm height and has a power stage measuring 24 mm x 24 mm. Offering configurable light-load modes and dead-time settings it does not require any heatsink or forced air cooling as the peak efficiency is beyond 98 % under standard operating conditions.

Collaboration to advance next-generation GaN Device

Learn more:
silvaco.com

Industry News
2025-06-24

Silvaco Group announced a strategic R&D collaboration with Fraunhofer Institute for Silicon Technology (ISIT). The partnership aims to accelerate development of next-generation Gallium Nitride devices using Silvaco's Power Devices Solution to perform Design Technology Co-Optimization (DTCO). This collaboration aligns with Fraunhofer ISIT's role in the EU Chips Act initiative through its participation in the APECS pilot line. Silvaco is a provider of TCAD, EDA software, and SIP solutions that enable semiconductor design and digital twin modeling through AI software and automation. Fraunhofer ISIT's Power Electronics division is at the forefront of developing and manufacturing cutting-edge device prototypes for high-performance power electronic and sensor systems. Fraunhofer ISIT will leverage Silvaco's design tools - including the Victory TCAD™ platform, Utmost IV™, and SmartSpice™ - to perform Design Technology Co-Optimization (DTCO) for power and sensor device development. Silvaco DTCO platform will enable accelerated prototyping in Fraunhofer ISIT's post-CMOS process environment, which is set up to explore emerging processes for both GaN and MEMS technologies on 8-inch wafers. In addition, Silvaco's Victory Design of Experiments (DOE) solution will streamline development workflows and support rapid innovation during the evaluation of novel process modules and emerging device concepts. In addition to the active utilization of Silvaco's tools in R&D and industry customer projects, Fraunhofer ISIT will train students at local universities in the utilization of Silvaco's Victory TCAD platform to prepare the next generation of semiconductor device engineers.

Collaboration on Next-Generation Integrated Power Delivery Solution for AI and Cloud Platforms

Learn more:
empowersemi.com

Industry News
2025-06-18

Empower Semiconductor announced a collaboration with Marvell Technology to develop optimized integrated power solutions for Marvell® custom silicon platforms. These solutions are designed to accelerate the transformation of power delivery systems to smaller, faster, integrated power silicon chips tightly coupled with the processor. The joint solutions are part of Empower's broader mission to address the power delivery challenges of the kilowatt-chip era. By integrating power delivery with processors, Empower and Marvell enable hyperscalers and infrastructure providers to maximize their performance, efficiency, and return on investment (ROI) of artificial intelligence (AI) and cloud data centers. The collaboration leverages Empower's FinFast™ technology and vertical power delivery architecture to provide system designers with pre-validated, high-density power solutions that move voltage regulation from traditional board-level designs to silicon-integrated or near-chip solutions. By bringing power delivery closer to the processor, these solutions significantly reduce power transmission losses, improve efficiency, and support the increasing current demands of next-generation XPUs.

The EU Energy Label for Mobile Devices

Learn more:
izm.fraunhofer.de

Industry News
2025-06-17

A new energy label for mobile devices is mandatory in the EU starting June 20, 2025. This applies to all smartphones and tablets with Android or iPadOS operating systems, ushering in a new era of European product policy. For the first time, an EU-wide standardized label, which Fraunhofer IZM played a key role in developing, evaluates not only the energy efficiency of devices, but also their reliability, durability, and repairability. The European regulation's goal is to greatly increase the longevity of mobile devices. According to a survey conducted by the Fraunhofer Institute for Reliability and Microintegration IZM in 2022, factors other than energy consumption are also influencing users' decisions. The survey indicated that device longevity is a crucial consideration for users. The label is closely tied to the new ecodesign requirements. Batteries should be able to withstand at least 800 charging cycles while retaining 80% of their original capacity. Manufacturers must enter all products bearing the EU energy label in a European product database (EPREL). This database can be accessed via the QR code on the energy label. This allows for informed purchasing decisions that are based on sustainability criteria and align with the principles of a circular economy. The potential savings are considerable: The new requirements are expected to reduce the primary energy consumption required for producing, distributing, and using mobile devices by nearly 14 terawatt hours per year by 2030. This reduction is equivalent to approximately one-third of the previous energy consumption throughout the products' life cycle.

25 V MOSFET in DFN3.3x3.3 meets Power Demands in AI Servers

Learn more:
aosmd.com

Product Release
2025-06-17

Alpha and Omega Semiconductor introduced its AONK40202 25V MOSFET in DFN3.3x3.3 Source-Down packaging technology. Designed for high power density in DC/DC applications, the device provides features that meet the requirements of AI servers and data center power distribution. In particular, its Source-Down packaging technology offers a larger source contact to the PCB, and its center gate pin layout allows easier routing on the PCB, so the gate driver connection can be minimized. The AONK40202 MOSFET's DFN3.3x3.3 Source-Down packaging technology with clip enables continuous current capabilities up to 319 A with a maximum junction temperature rated at 175 °C. This provides significant potential for system-level improvements, such as better thermal management, enabling higher power density and greater efficiency.

1600 V IGBTs for energy-conscious Appliance Markets

Learn more:
st.com

Product Release
2025-06-16

STMicroelectronics' STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and a maximum junction temperature of 175°C with a current rating of 30 A in high-power applications, including induction heaters and cookers, microwave ovens, and rice cookers. Extending the STPOWER portfolio, this is the first 1600 V IGBT in ST's IH2-generation operating with a saturation voltage V_CEsat of 1.77 V (typical, at rated current). The device, which is available in a TO-247 long lead package, can be used in single-switch quasi-resonant converters over a switching frequency range, from 16 kHz to 60 kHz. Featuring a positive V_CE(sat) temperature coefficient with tight parameter distribution, the STGWA30IH160DF2 allows connecting multiple devices in parallel for current sharing in high-power applications.

Launch of Energy Storage Resource Hub

Learn more:
arrow.com

Industry News
2025-06-16

Arrow Electronics has launched a dedicated online hub offering extensive resources for those seeking to understand the future of energy storage systems. As the global shift towards renewable energy accelerates, battery energy storage systems (BESS) are becoming critical in revolutionising energy storage and management. BESS technology plays a vital role in integrating solar and wind power, enabling the electrification of vehicles, and providing reliable backup power, ultimately enhancing sustainability and resilience across various sectors. The energy storage systems resource page provides access to a range of valuable content, including a webinar on 'Optimising Energy Storage: The Role of Advanced BMS,' an e-book on BESS, essential design resources, insightful articles exploring key energy storage topics, such as photovoltaic integration and recordings of on-demand webinars, including 'High-Power SiC MOSFETs Designed to Last.' Arrow, in collaboration with eInfochips, is driving innovation in the BESS sector by offering leading-edge components, expert engineering support, and dependable supply chain solutions.

CWIEME Berlin Closes with Record Energy, Innovation and Collaboration

Learn more:
berlin.cwiemeevents.com

Event News
2025-06-12

The event for coil winding, insulation and electrical manufacturing brought together industry leaders, engineers, academics and future talent to shape the future of electrical manufacturing. Welcoming a visitor footfall of 12,500+, including representatives from Hitachi, Hyundai, LG Electronics, Logitech, NIDEC, Nike, Bosch, Rolls-Royce, Schaeffler, Schneider Electric, Siemens, Tesla, Toshiba, Toyota and more. The show's conference program featured more than 90 expert speakers, covering key themes such as automation, sustainability, digitalisation and supply chain transformation. From e-mobility breakthroughs to leadership insights, the event proved once again why CWIEME Berlin is the cornerstone of the global electrical engineering calendar. Visitors explored the buzzing Innovation Zone, which hosted well-attended Power Hour presentations from its exhibitors throughout the show, and expanded Academic Excellence Hub, and the launch of the Electric Avenue helped guide guests through five exhibition halls filled with the world's most forward-thinking companies.

eBook on High-Density Power Modules for 48 V

Learn more:
vicorpower.com

Product Release
2025-06-11

Vicor explains in their latest eBook how its power solutions support customers that are constantly pushing the limits of what is possible. This exclusive read entitled ‘Changing what’s Possible’ delves into how power dense Vicor modules enable many world-changing innovations across various sectors, including electric vehicles, renewable energy and advanced computing, all of which are adopting 48 V architecture. The guide from Vicor outlines the essential role of high-density power modules in optimising performance in applications which test the limits of power electronics. Through a range of case studies that highlight daunting power challenges, the eBook explains how thermally-adept Vicor power modules in tandem with Vicor propriety technology and 48 V architectures are capable of exceeding what’s possible. The eBook provides fresh insight and knowledge on different power architectures through practical examples, encouraging the adoption of best practices in power system design in order to push the boundaries of what is possible. The eBook includes in-depth analysis as it explores the latest developments in high-density power electronics and their implications for various industries. Furthermore, it also shows the actual products used in the power delivery network to better understand how to design an individual PDN. This is complemented by practical applications because the eBook teaches about real-world applications and how cutting-edge power solutions are transforming industries.

On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers

Learn more:
horiba.com

Industry News
2025-06-11

Wide bandgap semiconductors such as SiC, GaN, and diamond are critical materials for next-generation power electronics, optoelectronics, and quantum technologies. However, their performance is highly sensitive to internal stress, strain, and defects introduced during growth and processing. In this webinar, you can explore how Raman, Photoluminescence (PL), Time-Resolved Photoluminescence and Cathodoluminescence can be powerful, non-destructive tools for characterizing these properties with high spatial and spectral resolution. It is discussed how Raman spectroscopy can reveal information about crystal quality, phonon shifts due to strain, and temperature effects, while PL provides insight into electronic and optical properties, impurity levels, and defect states. Real-world case studies and application examples highlight how these techniques can be used to optimize material growth, improve device yield, and accelerate R&D.

Tab Terminal, High Voltage DC Switching Relay

Learn more:
fcl-components.com

Product Release
2025-06-10

FCL Components has released the FTR-E1J 20A, a tab terminal-type high voltage DC switching relay, based on its FTR-E1 series. It is screw mounted and does not use printed circuit boards. This relay delivers 20 A / 800 V_DC, 10 A / 1,000 V_DC higher voltage switching with no specific polarity requirements for the connection of load terminals, and low power consumption (0.9 W at coil rated voltage). It features non-polarized contacts, making it suitable for charge and discharge circuits using FCL Components' arc suppression technology to protect its contacts. The FTR-E1J 20A is well-suited for both fuel and electric vehicle, solar, machinery, and battery applications, including electric vehicle pre-charge (HEV, PHEV, FCV, EV), PTC heaters, quick charge stations, photovoltaic power generation systems, hybrid construction machinery, battery systems, and V2H systems. This high insulation design (between coil and contacts: 5,000 V_DC, between open contacts: 2,500 V_DC), plastic sealed relay is RoHS compliant and uses no hydrogen gas. It measures 28.3 x 43.6 x 36.1 mm³ (excluding protrusion) and weighs approximately 85 g.

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200 V Family of SuperQ-based MOSFETs	iDEAL Semiconductor has announced the first of its...	12544	Product Release	200 V Family of SuperQ-based MOSFETs	iDEAL Semiconductor has announced the first of its 200 V family of SuperQ™-based MOSFETs has entered mass production, with four additional 200 V devices now sampling. The first 200 V device to reach mass production, the iS20M028S1P, is a 25 mO MOSFET in a TO-220 package. iDEAL’s lowest-resistance 200 V devices, now sampling in TOLL and D²PAK-7L, achieve a maximum R<sub>DS(on)</sub> of just 5.5 mΩ. "By expanding SuperQ into 200 V, iDEAL is proving that silicon innovation is far from over," said Mark Granahan, CEO and Founder of iDEAL Semiconductor. "These results show that we can deliver the lowest resistance and superior switching behavior while maintaining the manufacturability, reliability, and cost advantages of silicon. It’s a major milestone for our company and for customers looking to push efficiency forward." Target applications for the 200 V SuperQ family include motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar.	04.09.2025 15:30:00	Sep	news_2025-09-15_22.jpg	\images\news_2025-09-15_22.jpg	https://idealsemi.com/ideal-semiconductor-announces-200-v-family-of-superq-based-mosfets-with-industry-leading-cost-x-performance/	idealsemi.com
Three-Phase Sinewave Filter	EMIS has announced the release of its TPQS3113 Thr...	12541	Product Release	Three-Phase Sinewave Filter	EMIS has announced the release of its TPQS3113 Three-Phase Sinewave Filter, designed to improve power quality, protect connected equipment, and extend operating lifetimes in demanding industrial applications. Modern compact variable frequency drives (VFDs) that utilize high-speed IGBT switching transistors generate significant harmonic distortion. The TPQS3113 filter smooths these pulse width modulated (PWM) signals into near-perfect sinewaves, providing dV/dt protection, reducing motor losses, and increasing load efficiency. This results in longer motor lifespans, enhanced system reliability, and reduced downtime. In addition to motors, the TPQS3113 also benefits other sensitive equipment such as computers, power converters, and automation systems by minimizing voltage and current waveform distortions.	04.09.2025 12:30:00	Sep	news_2025-09-15_19.jpg	\images\news_2025-09-15_19.jpg	https://emisglobal.com/products/power-quality/output-filters/three-phase-sinewave-filter/pqsw/	emisglobal.com
SiC MOSFETs Adopted in Inverter Brick	ROHM and Schaeffler have started mass production o...	12523	Industry News	SiC MOSFETs Adopted in Inverter Brick	ROHM and Schaeffler have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer. The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack. "Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness," says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler.	04.09.2025 06:00:00	Sep	news_2025-09-15_1.jpg	\images\news_2025-09-15_1.jpg	https://www.rohm.com/news-detail?news-title=2025-09-04_news_schaeffler&defaultGroupId=false	rohm.com
Expansion of European Distribution Centre and Headquarters	TTI IP&E – Europe has officially begun constructio...	12527	Industry News	Expansion of European Distribution Centre and Headquarters	TTI IP&E – Europe has officially begun construction to expand its European Distribution Centre (EDC) and headquarters. With the groundbreaking ceremony, the project is now underway in Maisach-Gernlinden. Completion of the building exterior is scheduled for November 2026. Installation of the intralogistics and warehouse technology will then begin. Full completion of the EDC, including all building components and infrastructure, is planned for March 2028. The expansion will double TTI’s footprint at the site, adding 51,000 m² of space directly connected to the existing buildings. This includes approximately 30,000 m² of new warehouse and logistics capacity and 6,000 m² of additional office and administrative space. The project is backed by Invesco Real Estate, Munich, as investor and owner, and executed by BREMER Stuttgart GmbH as general contractor. The expanded EDC will feature state-of-the-art automation, including the world’s largest Autostore system built on a platform structure. This will enhance material flow efficiency and ensure faster, more reliable deliveries across Europe. The expansion will also create around 200 new ergonomic and modern jobs, adding to the current workforce of approximately 700 employees.	03.09.2025 10:00:00	Sep	news_2025-09-15_5.jpg	\images\news_2025-09-15_5.jpg	https://www.ttieurope.com/content/ttieurope/en.html	ttieurope.com
ECPE Workshop ’Ultra-High-Voltage Power Electronics’	The shift to renewables demands a stronger, smarte...	12525	Event News	ECPE Workshop ’Ultra-High-Voltage Power Electronics’	The shift to renewables demands a stronger, smarter grid. Medium Voltage DC (MVDC) has been identified as a key enabler, allowing efficient long-distance power transmission and mega-watt EV charging. But how do we control such high voltages? Discover the answer with Europe’s leading experts during this workshop November 12 - 13 in Lyon, France or online. Explore the development of cutting-edge SiC semiconductors to facilitate the high-voltage converters shaping the future of energy.	03.09.2025 08:00:00	Sep	news_2025-09-15_3.jpg	\images\news_2025-09-15_3.jpg	https://www.ecpe.org/events/workshops-tutorials/all/details/evt/mdl/ed/662/eyJtZjEiOnsibWx1MSI6Inx8fHx8fHwifSwiZWYyIjp7ImVsdTEiOiIxfGx1ZmVkaXRtZWRpYWxpYnJhcnl8TWVkaWFMaWJyYXJ5RXZlbnRMaXN0fE1lZGlhTGlicmFyeXxldmVudExpc3R8Mjg3fDIwMzd8IiwiZXBjOSI6dHJ1ZX0sInJmMyI6eyJyb2FkbWFwTGlzdFVyaSI6Inx8fHx8fHwifSwiYmY0Ijp7ImJsdTEiOiJ8fHx8fHx8In0sImxkNSI6eyJsZHUxIjoifHx8fHx8fCJ9fQ==/?cHash=8d2aa95ac7f652b0a2591b3073861ccc	ecpe.org
Automotive High-Withstand Voltage LDO Linear Regulator IC	ABLIC launched sales of the S-19230/1 Series, an a...	12543	Product Release	Automotive High-Withstand Voltage LDO Linear Regulator IC	ABLIC launched sales of the S-19230/1 Series, an automotive high-withstand voltage regulator IC. Recently, the power consumption of automotive electronic components like various ECUs and infotainment systems has been steadily increasing. As a countermeasure, there’s a growing trend to increase the voltage of automotive auxiliary batteries from the conventional 12V to 48V. Auxiliary batteries supply power to electronic components via wire harnesses. By quadrupling the voltage to supply the same power, the current can be reduced to one-quarter. This enables the use of thinner wire harnesses, contributing to lighter vehicle designs and improved fuel or electric power efficiency. The S-19230/1 Series supports 48V, 24V, and 12V auxiliary batteries, thanks to its high input voltage tolerance of up to 80V. It also achieves a low operating current of 2.0µA, which is crucial for supplying power to constantly operating sensors and CAN/LIN transceivers, helping to reduce the system’s standby current. Additionally, this product is the first ABLIC voltage regulator to integrate an open-loop protection circuit. The protection circuit suppresses the rise in output voltage to a certain level if the wiring between the external resistor and the IC - used for setting the output voltage - is broken (open fault). This protection circuit eliminates the need for conventional external components used for overvoltage protection, contributing to cost reduction, space saving, and enhanced safety.	02.09.2025 14:30:00	Sep	news_2025-09-15_21.png	\images\news_2025-09-15_21.png	https://www.ablic.com/en/semicon/news/2025/09/02/s-19230-1/	ablic.com
600 W Automotive TVS Diode	Littelfuse announced the launch of the SZSMF6L Ser...	12542	Product Release	600 W Automotive TVS Diode	Littelfuse announced the launch of the SZSMF6L Series of unidirectional and bidirectional TVS diodes. These 600 W automotive-grade devices provide robust protection against high-energy transients in a compact, surface-mount SOD-123FL package, making them ideal for increasingly space-constrained automotive and electric vehicle (EV) designs. Building on the success of the 400 W SZSMF4L Series introduced in 2023, the SZSMF6L Series delivers 50% higher peak power handling while maintaining the same compact footprint. The improved surge protection and enhanced clamping performance help safeguard critical automotive systems exposed to voltage spikes from switching events, load dumps, or electrostatic discharge (ESD). "The SZSMF6L Series addresses the evolving demands of EV and automotive system designers who need greater transient protection without compromising board space," said Charlie Cai, Director Product Marketing SBU at Littelfuse. "With the transition to zonal architectures and the continued push for miniaturization, this 600 W solution offers engineers a more robust and thermally reliable alternative to the SZSMF4L for high-stress environments." The SZSMF6L TVS diodes enable more efficient, compact, and rugged designs that meet the growing electrical demands of next-generation vehicles. Their performance and footprint compatibility allow seamless upgrade paths from the SZSMF4L when additional power handling is required.	02.09.2025 13:30:00	Sep	news_2025-09-15_20.jpg	\images\news_2025-09-15_20.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-adds-600-w-szsmf6l-series-to-automotive-tvs-line-for-high-energy-transient-protection	littelfuse.com
GaN-on-Si Foundry Services	X-FAB Silicon Foundries is building on its experti...	12524	Industry News	GaN-on-Si Foundry Services	X-FAB Silicon Foundries is building on its expertise in gallium nitride (GaN) processing technology for high-power applications by introducing GaN-on-Si foundry services for dMode devices as part of its XG035 technology platform. The move further leverages X-FAB’s advantage as a pure-play foundry that now offers a set of processing technologies for GaN and other WBG materials – including SiC – to help fabless semiconductor companies bring their designs to life. X-FAB provides the GaN-on-Si technology from its state-of-the-art 8-inch fab in Dresden, one of six production facilities operated by the company worldwide. The Dresden fab hosts a wide range of specialized processing equipment, measurement tools and technologies that are optimized for GaN development and production, together with analog CMOS, in a stable, trusted, automotive-qualified fab environment. Tools on site have been optimized to handle the thicker GaN-on-Si wafers required by customers in sectors such as automotive, data center, industrial, renewable energy, medical, and others. Thanks to strong high-voltage GaN expertise over several years, the company’s in-house expertise now extends to GaN-on-Si foundry services for dMode devices following the recent release of its XG035 dMode technology as an open foundry platform. The process includes dMode HEMT transistors (scalable from 100V to 650V), often used in power conversion applications. In addition, X-FAB offers customer-specific GaN technologies including dMode, eMode HEMTs as well as Schottky Barrier Diodes, which are popular for high-frequency rectification, power supply, and solar panel applications, among others.	02.09.2025 07:00:00	Sep	news_2025-09-15_2.png	\images\news_2025-09-15_2.png	https://www.xfab.com/news/details/article/x-fab-now-offers-gan-on-si-foundry-services	xfab.com
New Brand Identity and Tagline: "In Everything, Better"	TDK Corporation announces the launch of its new br...	12532	Industry News	New Brand Identity and Tagline: "In Everything, Better"	TDK Corporation announces the launch of its new brand identity and tagline: "In Everything, Better". This serves as a significant driver of the Long-term Vision "TDK Transformation" and captures the company’s unique venture spirit, its commitment to progress, and its vision for a sustainable future. For 90 years, TDK has quietly shaped the world from within. TDK has been pushing for progress and boldly reinventing itself; from ferrite cores to cassette tapes, to powering the digital age with advanced components, sensors, and batteries, leading the way towards a sustainable future. The company’s technologies nowadays power the devices and systems that define modern life: from smartphones and electric vehicles to industrial applications and energy systems. With over 100,000 passionate team members worldwide, united by a start-up mentality and a drive for innovation, TDK is an enabler behind the scenes, creating impact from within. "In Everything, Better" - the new tagline, debuting in September 2025, is not just a phrase; it is a declaration of TDK’s promise to always strive for better, for ourselves and for society. Noboru Saito, President & CEO of TDK Corporation mentioned "The new brand identity aligns with our Long-term Vision of TDK Transformation, and it is rooted in our Corporate Motto of ’Contributing to culture and industry through creativity’ and Corporate Principles of ’Vision, Courage, and Trust’. It is what we believe, how we act, and how we communicate. It is who we are today, where we are going in the future and the legacy we create."	01.09.2025 15:00:00	Sep	news_2025-09-15_10.jpg	\images\news_2025-09-15_10.jpg	https://www.tdk.com/en/news_center/press/20250901_01.html	tdk.com
150 V MOSFETs in TOLL, TOLG, and TOLT Packages	Infineon Technologies has expanded its OptiMOS&tra...	12538	Product Release	150 V MOSFETs in TOLL, TOLG, and TOLT Packages	Infineon Technologies has expanded its OptiMOS™ 6 portfolio by introducing the Automotive 150 V MOSFET family. These devices are specially developed to meet the demanding requirements of modern electric vehicles and are available in three advanced package options: TOLL, TOLG, and TOLT. The automotive MOSFET family, based on Infineon’s 6th generation OptiMOS technology, offers two different drain-source resistance levels across all device variants. All variants are rated for the 150 V voltage class and deliver the lowest R<sub>DS(on)</sub> available in this class, reaching as low as 2.5 mΩ. This enables minimal conduction losses and excellent efficiency. The tight distribution of the gate threshold voltage (V<sub>GS(th)</sub>) supports optimal synchronization when multiple MOSFETs are used in parallel configurations, which is particularly relevant for high-power automotive systems. The devices also feature low switching losses up to high frequencies, allowing for highly efficient operation in fast-switching applications such as modern DC/DC converters. In terms of thermal performance, the variants achieve a thermal resistance as low as 0.4 K/W. This significantly improves heat dissipation, reduces system-level cooling requirements, and lowers associated expenses.	01.09.2025 09:30:00	Sep	news_2025-09-15_16.jpg	\images\news_2025-09-15_16.jpg	https://www.infineon.com/market-news/2025/INFATV202509-139	infineon.com
40 Watt DC/DC Converter	The THL 40WI series extends Traco Power’s existing...	12536	Product Release	40 Watt DC/DC Converter	The THL 40WI series extends Traco Power’s existing DC/DC converter portfolio with 40 Watt, 1′ × 1′ package converters. With the focus on combining cost efficiency and quality this isolated high performance DC/DC converter series is suitable for many different applications. The series comes in an encapsulated, shielded 1 × 1′ × 0.43′ metal package and offers integrated remote on/off and trim functions. High efficiency up to 93% enables the converter to operate from –40°C to +65°C without derating. All models have a wide 4:1 input voltage range and precisely regulated, isolated outputs. The series meets the latest IT safety certifications (UL 62368-1) and is suitable for uses in mobile equipment, instrumentation, distributed power architectures in communication and industrial electronics and everywhere where cost efficiency and quality are critical factors.	01.09.2025 07:30:00	Sep	news_2025-09-15_14.jpg	\images\news_2025-09-15_14.jpg	https://www.tracopower.com/int/thl-40wi	tracopower.com
Strategic Distribution Partnership to Expand Presence Across APAC	Lotus Microsystems and EDOM Technology jointly ann...	12528	Industry News	Strategic Distribution Partnership to Expand Presence Across APAC	Lotus Microsystems and EDOM Technology jointly announced the signing of a strategic distribution agreement for the Asia-Pacific region. This collaboration combines Lotus Microsystems’ power management solutions with EDOM Technology’s extensive distribution network, strong field application engineering (FAE) force, and deep market expertise. The partnership is designed to accelerate customer adoption, deliver superior technical support, and strengthen the presence of both companies across the fast-growing APAC markets. Power and thermal management are crucial aspects of electronic design, especially in the rapidly developing computing, networking, and IoT markets. Effective thermal management ensures that devices operate within a safe temperature range, optimizing performance and extending their operational life. Lotus Microsystems’ work on high-efficiency power modules supports more sustainable computing by reducing energy losses and improving overall power usage effectiveness. "We are delighted to partner with EDOM Technology, a recognized leader in distribution across Asia. This agreement marks an important step in our global expansion, enabling Lotus Microsystems to better serve customers in key APAC markets with the strong support and capabilities that EDOM provides."said Hans Hasselby-Andersen, CEO of Lotus Microsystems.	29.08.2025 11:00:00	Aug	news_2025-09-15_6.jpg	\images\news_2025-09-15_6.jpg	https://www.lotus-microsystems.com/	lotus-microsystems.com
CAN FD Transceiver Achieves Toyota VeLIO Certification	NOVOSENSE Microelectronics recently announced that...	12539	Product Release	CAN FD Transceiver Achieves Toyota VeLIO Certification	NOVOSENSE Microelectronics recently announced that its automotive-grade CAN FD transceiver, the NCA1044-Q1, has successfully passed Toyota’s VeLIO (Vehicle LAN Interoperability and Optimization) certification. Prior to this, the device had already obtained the IBEE/FTZ-Zwickau EMC certification in Europe. The certification process involves stringent testing, including Transceiver Delay, dV/dt characteristics, R>D and D>R Distortion Delays, Static and Frequency Response of Threshold Voltage, Single-Ended S-Parameters, and Static Tests. The NCA1044-Q1 successfully passed all these tests, underscoring its capabilities in high-speed communication, signal integrity, and electromagnetic compatibility. In addition to VeLIO, the NCA1044-Q1 has also been certified by IBEE/FTZ-Zwickau according to the IEC 62228-3 standard, while also meeting Volkswagen’s VW80121-3, 2023-12 EMC requirements. Unlike SAE J2962, the IEC 62228-3 standard focuses directly on the EMC performance of the transceiver itself, making the certification one of the most rigorous benchmarks in the automotive industry and a widely referenced standard across global automakers. The IBEE/FTZ-Zwickau EMC certification covers four major categories: Emission RF Disturbances, Immunity to RF Disturbances, Immunity to Transients, and Immunity to ESD. The NCA1044-Q1 passed all tests successfully, providing high confidence in its robustness under demanding automotive conditions. With both VeLIO and IBEE/FTZ-Zwickau certifications, the NCA1044-Q1 significantly reduces its implementation and system verification costs for OEMs and Tier 1 suppliers.	29.08.2025 10:30:00	Aug	news_2025-09-15_17.jpg	\images\news_2025-09-15_17.jpg	https://www.novosns.com/en/company-news-341	novosns.com
Power Modules to Accelerate Data Center Power Architecture	Infineon Technologies announced the strengthening ...	12534	Industry News	Power Modules to Accelerate Data Center Power Architecture	Infineon Technologies announced the strengthening of its existing collaboration with Delta Electronics in the development of high-density power modules capable of enabling vertical power delivery to AI processors in hyperscale data centers. Together, the companies are taking a next step to drive decarbonization and digitalization in AI data centers further. The partnership leverages Infineon’s ultra-thin silicon (MOSFET) chip technology and embedded packaging expertise, as well as Delta’s industry-leading power module design and manufacturing capabilities. This results in highly dense modules with exceptional efficiency to enable vertical power delivery (VPD) architecture to the xPUs in hyperscale data centers. The usage of vertical power delivery modules in comparison to a lateral mounted discrete solution can save up to 150 tons of CO<sub>2</sub> over an expected lifetime of three years per rack. Assuming that future hyperscale data centers will consists of up to 100 server racks, the amount of carbon dioxide saved is equivalent to the CO<sub>2</sub> emissions of 4000 households per year. Infineon’s OptiMOS™ silicon-based 90 A integrated power-stage solution is being utilized by Delta to develop VPD modules. The use of vertical power delivery is a key factor in improving system efficiency as it allows for a more direct and compact power delivery path. By delivering power vertically, rather than horizontally, the VPD modules reduce power delivery network losses in the system. This, in turn, enables the modules to achieve higher power density and efficiency, while also reducing the amount of heat generated due to less power loss. Additionally, the vertical power delivery design also frees up space on the system board, allowing hyperscalers a more efficient use of space and the development of more compact and dense data center designs reducing total-cost of ownership.	28.08.2025 17:00:00	Aug	news_2025-09-15_12.jpg	\images\news_2025-09-15_12.jpg	https://www.infineon.com/market-news/2025/INFPSS202508-138	infineon.com
Jingya Huang Appointed Senior Manager Marketing Communications	With its commitment to innovation and growth throu...	12529	People	Jingya Huang Appointed Senior Manager Marketing Communications	With its commitment to innovation and growth through employee development, Indium Corporation announces the promotion of Jingya Huang to Senior Manager, Marketing Communications, to continue to lead the company’s branding and promotional efforts. In her new role, Huang is responsible for the strategic direction of Indium Corporation’s global marketing communications initiatives, focusing on innovation and maximizing impact in markets worldwide. She will continue to lead the Marketing Communications team with an emphasis on fostering innovation, ownership, and collaboration. Huang will also provide strategic support to other internal teams and lead high-priority special projects that advance the company’s mission and global presence. Huang joined Indium Corporation as Marketing Communications Assistant Manager in 2016. She was promoted to Marketing Communications Manager in 2020, at which point she began leading all global marketing communications efforts and the entire Marketing Communications team.	28.08.2025 12:00:00	Aug	news_2025-09-15_7.jpg	\images\news_2025-09-15_7.jpg	https://www.indium.com/blog/indium-corporation-promotes-huang-to-senior-manager-marketing-communications/	indium.com
Digital Hall latch IC in CMOS technology	Melexis unveils a variant of the MLX92211, a 3-wir...	12540	Product Release	Digital Hall latch IC in CMOS technology	Melexis unveils a variant of the MLX92211, a 3-wire Hall-effect latch. This device is designed for lateral magnetic position sensing, with high ESD protection and a high output current limit. This latest addition enables motor miniaturization by providing enhanced integration and cost-effective performance, ideal for automotive compact motors used in applications such as seat motors, sunroofs and thermal expansion valves. The MLX92211 IMC addresses these head-on with an integrated magnetic concentrator (IMC) that enables lateral sensing in a surface-mount device (SMD) TSOT-3L package – eliminating the need for through-hole components and aligning with modern automated assembly processes. The result is a reduced motor height, improved packaging flexibility, and optimized manufacturing workflows. The single-package device integrates a voltage regulator (2.7 to 24V operating range), a Hall effect sensor with advanced offset cancellation, and an open-drain output driver. The magnetic core’s enhanced offset cancellation system facilitates faster, more accurate, and robust processing, irrespective of temperature and stress, and includes a negative temperature coefficient to counteract the natural weakening of magnets at high temperatures. The robust latch sensor can be used in both 3-wire and 2-wire (with external resistor) configurations, with the 30mA current limit easily sufficient for maintaining safe and consistent operation in environments such as seat motors – where continuous current up to 25mA is often required. Combined with strong electrostatic discharge (ESD) protection (8kV), automatic output shut-off with self-recovery, and ASIL A functional safety readiness, the MLX92211 IMC meets the reliability requirements of modern automotive deployments.	28.08.2025 11:30:00	Aug	news_2025-09-15_18.png	\images\news_2025-09-15_18.png	https://www.melexis.com/en/news/2025/28aug2025-melexis-latch-slims-down-motor-applications	melexis.com
ReVolt Charges up Hollywood’s Clean Energy	Most production companies today rely on gasoline a...	12531	Industry News	ReVolt Charges up Hollywood’s Clean Energy	Most production companies today rely on gasoline and diesel generators to operate their movie sets. But as these become more elaborate - with enormous footprints and an expanding array of specialized electronics - energy demands have escalated, as have unwanted levels of dangerous CO<sub>2</sub> emissions. ReVolt Holdings has developed a better way to power movie sets and studio backlots by providing clean, mobile, always-on electricity. ReVolt systems power everything - from cameras, sound and lighting equipment to special effects rigs and basecamps - quietly, efficiently and with no CO<sub>2</sub> output. Diesel generators also produce "dirty" power that requires extra filtration when used in sensitive digital lighting and motion control equipment. ReVolt charging systems produce a pure sine wave profile that ensures a clean, stable power source. To ensure stable voltage levels, ReVolt adopted Vicor BCM® bus converters, DCM™ DC-DC converters, and most recently, PRM™ regulators. The BCM4414 converts and isolates 800V into a 48V at 35A bus, which the DCM3414 taps off to regulate 24V loads. The 770W/in³ BCM4414 also serves as a battery emulator, reducing the need for a conventional and bulky 48V battery. The PRM is a non-isolated buck-boost DC-DC regulator capable of converting 48V into various output voltages, with power density exceeding 2kW/in³ and 96% efficiency. Portable, clean energy is in demand today more than ever. As it imprints its power concept on the film industry, ReVolt is preparing to address a variety of new applications, from servicing natural disaster zones to providing power for construction and live events. With the trend toward eMobility and greener, more sustainable power, the relationship with Vicor - grounded in modular power delivery - is gaining momentum and setting the stage for a greener future.	27.08.2025 14:00:00	Aug	news_2025-09-15_9.jpg	\images\news_2025-09-15_9.jpg	https://www.vicorpower.com/press-room/revolt	vicorpower.com
Strengthening Supply Resilience of Key Material for Global Semiconductor Industry	Asahi Kasei will increase PIMEL™ photosensit...	12530	Industry News	Strengthening Supply Resilience of Key Material for Global Semiconductor Industry	Asahi Kasei will increase PIMEL™ photosensitive polyimide (PSPI) production capacity at its Fuji City facility in Shizuoka Prefecture, Japan. PSPI is a key material for the global electronics industry, mainly used for buffer coatings and passivation layers in semiconductor applications. By doubling its capacity by 2030, Asahi Kasei underlines its commitment to growing its Electronics business and reinforcing its position as a key supplier for the global semiconductor industry. With the global semiconductor industry entering a new growth cycle and projected to surpass US$1 trillion in revenue by the mid-2030s, as reported by consulting firm Alvarez & Marsal, Asahi Kasei has forecasted that the demand for next-generation semiconductor interlayer insulation will continue to grow rapidly at an average annual growth rate of 8%. In response to this quickly rising demand, Asahi Kasei completed the construction of a new plant producing PIMEL™ photosensitive polyimide in Fuji City, Shizuoka Prefecture, in December 2024. Since then, the company has decided to expand production in Fuji City further, doubling the 2024 capacity by 2030. This expansion is expected to significantly improve the supply resilience of essential materials in the manufacturing of semiconductors. Asahi Kasei will invest approximately ¥16 billion in this expansion.	26.08.2025 13:00:00	Aug	news_2025-09-15_8.JPG	\images\news_2025-09-15_8.JPG	https://www.asahi-kasei.com/	asahi-kasei.com
Conference on Production Technologies and Systems for Electric Mobility (EPTS)	The Electric Drives Production Conference (E\|DPC) ...	12513	Event News	Conference on Production Technologies and Systems for Electric Mobility (EPTS)	The Electric Drives Production Conference (E\|DPC) is expanding to become the Conference on Production Technologies and Systems for Electric Mobility (EPTS), taking place in Karlsruhe, Germany October 8 & 9. Join leading experts from industry and research for two days packed with high level keynotes, sound technical presentations and networking opportunities.	25.08.2025 11:00:00	Aug	news_2025-09-01_6.jpg	\images\news_2025-09-01_6.jpg	https://www.epts-conference.com/	epts-conference.com
New CEO of WBG Power Semiconductor Company	Navitas Semiconductor's Board of Directors has app...	12512	People	New CEO of WBG Power Semiconductor Company	Navitas Semiconductor's Board of Directors has appointed Chris Allexandre as President and Chief Executive Officer, effective September 1, 2025. He will also join the Company's Board of Directors. The new CEO succeeds Gene Sheridan, a Navitas founder, who will step down as President and CEO and from the Board on August 31, 2025. Allexandre brings more than 25 years of experience in the semiconductor industry. Most recently, he served in senior executive roles at Renesas Electronics, including Senior Vice President and General Manager of its Power Division from October 2023. Chris Allexandre oversaw Renesas' $2.5 billion power management business and led the pivot and execution of its power strategies toward the cloud infrastructure, automotive and industrial markets, including Renesas' acquisition and integration of Transphorm, Inc., a supplier of GaN solutions, in June 2024. Allexandre was previously Renesas' Chief Sales and Marketing Officer from 2019 to 2023. Prior to his tenure at Renesas, Navitas' new CEO held executive roles at Integrated Device Technology (IDT) (acquired by Renesas in 2019) as Senior Vice President of Sales and Marketing; at NXP Corporation as Senior Vice President, Worldwide Sales for Mass Market; and at Fairchild Semiconductor as Senior Vice President of Worldwide Sales, Marketing and Business Operations. Chris Allexandre began his career at Texas Instruments, beginning in its New College Graduate rotation program, and over 16 years in business and sales roles based in Europe and China, becoming TI's Vice President of Sales for EMEA and a member of TI's strategic leadership team in 2012. Allexandre's management experience spans analog, power, mixed-signal and digital products across cloud, industrial, mobile, consumer, telecom, and automotive markets. Chris Allexandre holds a Master of Science in Electrical Engineering from the Institut Supérieur de l'Électronique et du Numérique (ISEN) in Lille, France.	25.08.2025 10:00:00	Aug	news_2025-09-01_5.png	\images\news_2025-09-01_5.png	https://navitassemi.com/navitas-semiconductor-names-chris-allexandre-as-president-and-chief-executive-officer/	navitassemi.com
Back to School Giveaway to Empower Tomorrow’s Innovators	DigiKey announces its annual Back to School Giveaw...	12526	Industry News	Back to School Giveaway to Empower Tomorrow’s Innovators	DigiKey announces its annual Back to School Giveaway, which offers university students a chance to win products and swag, including one grand prize of a Teledyne LeCroy Power Supply unit. Five entrants will be randomly selected to win a prize package that includes products such as an Aven Tools LED lamp, a Pokit Innovations all-in-one digital tool, a Weidmüller wire stripper, an Adafruit Ladyada’s electronics toolkit, DigiKey swag and more. Plus, one grand prize winner will also receive a Teledyne LeCroy Power Supply unit. "Each year, the Back to School Giveaway is a celebration of curiosity, creativity and the bright future ahead," said Brooks Vigen, senior director of global strategic marketing at DigiKey. "DigiKey is proud to support students as they turn bold ideas into real-world innovations, and we’re excited to see how this generation will shape the technologies of tomorrow." The sweepstakes is open to any student with a university or college email address, and entries may be made in students’ local language. Submissions are open until Oct. 24, 2025, and winners will be announced around Nov. 15, 2025.	25.08.2025 09:00:00	Aug	news_2025-09-15_4.png	\images\news_2025-09-15_4.png	https://www.digikey.com/en/resources/social/back2school?utm_source=referral&utm_medium=pressrelease&utm_campaign=pressrelease	digikey.com
Collaboration on SiC Power Semiconductor Wafers	Toshiba Electronic Devices & Storage Corporation (...	12533	Industry News	Collaboration on SiC Power Semiconductor Wafers	Toshiba Electronic Devices & Storage Corporation ("Toshiba") and SICC ("SICC") have signed a memorandum of understanding (MOU) under which they will explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two companies will discuss the scope of their joint efforts and mutual support. Toshiba has an established track record in developing, manufacturing and selling SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and the automotive segment. The company aims to further reduce power losses in the devices and to improve their reliability and efficiency in future high-efficiency power conversion applications. Achieving these goals requires close collaboration with an innovator in SiC wafer technology. Collaboration with SICC, a global leader in SiC wafer development and mass production technology, is expected to drive forward optimal solutions for various applications and accelerate business expansion.	22.08.2025 16:00:00	Aug	news_2025-09-15_11.jpg	\images\news_2025-09-15_11.jpg	https://toshiba.semicon-storage.com/ap-en/company/news/news-topics/2025/08/corporate-20250822-1.html	toshiba.semicon-storage.com
RT Box Workshop in Zurich	In the workshop, you will learn modeling technique...	12514	Industry News	RT Box Workshop in Zurich	In the workshop, you will learn modeling techniques for real-time simulations using PLECS with the PLECS RT Box. You will work hands-on with hardware-in-the-loop (HIL) and rapid control prototyping (RCP) application examples. You will see that step size can be reduced to nanoseconds, even for large-scale models. In addition to the technical aspects, the workshop offers an opportunity to connect with the developers of PLECS. The required software and PLECS RT Box hardware will be provided for the workshop.	21.08.2025 12:00:00	Aug	news_2025-09-01_7.jpg	\images\news_2025-09-01_7.jpg	https://plexim.com/events/seminars/2515	plexim.com
USB-C Power Solution with Three-Level Topology	Renesas Electronics introduced the RAA489300/RAA48...	12535	Product Release	USB-C Power Solution with Three-Level Topology	Renesas Electronics introduced the RAA489300/RAA489301 high-performance buck controller designed with a three-level buck topology used for battery charging and voltage regulation in USB-C systems such as multiple-port USB-PD chargers, portable power stations, PC docking station, robots, drones, and other applications that need a high efficiency DC/DC controller. The three-level buck converter topology enabled by the new IC delivers exceptional efficiency and significantly reduces the required inductance for regulating the output voltage. Its innovative design minimizes power loss and reduces system size, making it ideal for compact, high-performance applications. The three-level topology consists of two additional switches and a flying capacitor compared to a conventional two-level buck converter. The flying capacitor reduces voltage stress on the switches, allowing designers to use lower voltage FETs with better figures of merit. The result is reduced conduction and switching losses. This topology also enables the use of a smaller inductor with peak-to-peak ripple of only about 25 percent of that of a two-level converter, enabling reduced inductor core and direct current resistance losses. The 3-Level DC-DC RAA489300/RAA489301 battery charger and voltage regulator offers superior thermal performance, which reduces cooling requirements and results in cost and space savings. This innovative approach addresses the growing demand for compact and efficient power management systems.	20.08.2025 06:30:00	Aug	news_2025-09-15_13.jpg	\images\news_2025-09-15_13.jpg	https://www.renesas.com/en/about/newsroom/new-renesas-usb-c-power-solution-innovative-three-level-topology-improves-performance-and-reduces	renesas.com
SMD Heat Sinks from the Tape	With the SMD heatsink product group Fischer Elektr...	12516	Product Release	SMD Heat Sinks from the Tape	With the SMD heatsink product group Fischer Elektronik claims to offer "the smallest ribbon heatsinks, also available as tape & reel as standard now, especially for cooling electronic devices on the PCB". The packaging form of the SMD heatsinks as a tape & reel supports and simplifies the automatic assembly and soldering process of the PCB, as the SMD heatsinks can be handled in a similar way to an SMT component. The heatsink designs ICK SMD A 13 ... B TR, ICK SMD F 8 ... TR, ICK SMD F 21 ... B TR, ICK SMD K 19 ... B TR, ICK SMD N 8 ... TR and ICK SMD N 19 ... B TR are optionally available with a black anodised or solderable surface coating as a tape & reel (TR) version. Depending on the position of the SMD heatsink in the tape, an additional kapton point acts as a mounting aid. The tape diameter for all designs is 330 mm, with a tape width of 16, 24 or 32 mm, depending on the heatsink size. All specifications, such as tape diameter, tape width and the number of SMD heatsinks on a reel, can also be adapted to customer-specific requirements.	15.08.2025 07:30:00	Aug	news_2025-09-01_9.JPG	\images\news_2025-09-01_9.JPG	https://www.fischerelektronik.de/en/latest-news/press-releases/2025-fischer-pressemitteilungen/smd-heat-sinks-from-the-tape/	fischerelektronik.de
Changes in Management Positions at Würth Elektronik eiSos Group	Dirk Knorr has taken over the position of COO of t...	12508	People	Changes in Management Positions at Würth Elektronik eiSos Group	Dirk Knorr has taken over the position of COO of the Würth Elektronik eiSos Group. After completing his training as an industrial electronics technician and subsequently graduating with a degree in industrial engineering, Dirk Knorr initially worked as a project manager for a solutions provider before joining Würth Elektronik in 2005. Knorr has extensive expertise in quality and risk management. As part of his role as Managing Director Germany, he has driven forward digitization projects and initiated logistics adjustments at the Waldenburg site, among other things. In his new role, Mr. Knorr will be responsible for the company's core operational pillars, including IT, digital transformation, production, logistics, quality, and eiSos Group compliance standards. Simultaneously, Sebastian Valet has taken over Dirk Knorr's previous position as Managing Director of Würth Elektronik eiSos. Sebastian Valet holds a degree in business administration and has been with the Würth Group since 1999, where his career path led him to Würth Elektronik in 2002. As export manager, Valet played a key role in the internationalization of Würth Elektronik and established the markets in Israel, Turkey, and Australia before taking over several commercial departments at the headquarters in Waldenburg. Most recently, he was responsible for supply chain management, internal sales, export control, and legal & compliance. Following the change in leadership, the management team at Würth Elektronik eiSos now consists of the following members: Thomas Garz, Chief Executive Officer (CEO) of the Würth Elektronik eiSos Group; Alexander Gerfer, Chief Technology Officer (CTO), Würth Elektronik eiSos Group; Dirk Knorr, Chief Operating Officer (COO); Sebastian Valet, Managing Director; Josef Wörner, Managing Director.	14.08.2025 06:00:00	Aug	news_2025-09-01_1.jpg	\images\news_2025-09-01_1.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=managementupdate	we-online.com
Materials Informatics will "revolutionize Battery Development"	The traditional battery materials discovery proces...	12497	Industry News	Materials Informatics will "revolutionize Battery Development"	The traditional battery materials discovery process involves physics-informed trial-and-error, which is both expensive and time-consuming. Machine learning methods, specifically materials informatics for discovering electrolyte, electrode, current collector and packaging materials, could provide a necessary avenue for accelerating the battery development process. IDTechEx has now published a report on materials informatics for batteries named "AI-Driven Battery Technology 2025-2035: Technology, Innovation and Opportunities". Materials informatics describes a field of machine learning in which data science is used to screen and discover materials for specific use-cases. It is a technology that has existed for several decades, and a successor to bio-informatics, revolutionizing the pharmaceutical industry. An emerging technology is de novo design, describing materials informatics that utilizes generative AI to design entirely novel materials. A scoring agent and a generative agent work in tandem to score theoretical materials, eventually selecting a candidate with the highest potential for the given application. Meanwhile, de novo design is relatively immature, and though it has seen some success, most of this is in research rather than in the commercial world. Completely novel materials also lack existing supply chains, and as such they are expensive to synthesize as they do not benefit from economy of scale. Generally, IDTechEx predicts that well-established chemistries will heavily favor virtual screening approaches over de novo design, while less established chemistries will require de novo design. IDTechEx predicts that materials informatics will become a necessary part of the battery development over the next decade, especially as new chemistries like lithium-metal become more common.	12.08.2025 12:00:00	Aug	news_2025-08-15_7.png	\images\news_2025-08-15_7.png	https://www.idtechex.com/en/research-report/ai-driven-battery-technology-2025-2035-technology-innovation-and-opportunities/1049	idtechex.com
Survey reveals how Data is powering the Future for Solar Energy Innovation and Growth	A survey, conducted by Censuswide on behalf of Flu...	12496	Industry News	Survey reveals how Data is powering the Future for Solar Energy Innovation and Growth	A survey, conducted by Censuswide on behalf of Fluke, on key challenges for the solar industry identifies improving panel efficiency, transitioning from reactive to predictive maintenance, and adopting smart technologies as top priorities. Crucially, data emerges as the driving force behind innovation and operational efficiency. The survey engaged over 400 solar OEMs, technicians, and installers across the UK, Germany, Spain and the USA to gain insights. The survey results also highlighted their attitudes toward emerging trends and their expectations for how the future of solar energy is likely to evolve in the coming years. The research revealed that nearly two-thirds of respondents (63%) believe solar will become the dominant energy source in their country. However, it also highlighted significant challenges that must be addressed to turn this optimistic vision into reality and pave the way for a solar-powered future. One of the challenges that emerged in the survey's findings is the need to rapidly shift from reactive maintenance to a more proactive approach. With 91% of those surveyed reporting concerns about the efficiency of the current generation of solar modules and 39% of respondents identifying inverter failures as a common issue, it's clear an effective maintenance strategy is a necessity. Nearly a third of all respondents described their current maintenance strategy as reactive, while more than half indicated that implementing predictive maintenance was a key priority. 59% stressed the need to train technicians in advanced diagnostic tools to address evolving challenges, while 45% view AI integration in solar panel design, optimization, and maintenance as a key opportunity.	12.08.2025 11:00:00	Aug	news_2025-08-15_6.jpg	\images\news_2025-08-15_6.jpg	https://www.fluke.com/en#	fluke.com
Fire Protection Materials for EV Batteries 2025-2035: Markets, Trends, and Forecasts	IDTechEx's report on Fire Protection Materials for...	12494	Industry News	Fire Protection Materials for EV Batteries 2025-2035: Markets, Trends, and Forecasts	IDTechEx's report on Fire Protection Materials for Electric Vehicle Batteries analyzes trends in battery design, safety regulations, and how these will impact fire protection materials. The report benchmarks materials directly and in application within EV battery packs. The materials covered include ceramic blankets/sheets (and other non-wovens), mica, aerogels, coatings (intumescent and other), encapsulants, encapsulating foams, compression pads, phase change materials, polymers, and several other materials. IDTechEx predicts this market will grow at 15% CAGR from 2024 to 2035. By the way: Data continues to support the fact that EVs are less likely to catch fire than internal combustion engine vehicles. However, as a new technology, EVs get more press. Each cell format – prismatic, pouch and cylindrical – has different needs in terms of inter-cell materials which has led to trends in fire protection material adoption. For example, cylindrical systems have largely used encapsulating foams, whereas prismatic systems typically use materials in sheet format such as mica. The market for fire protection materials is becoming increasingly crowded, with a wide range of materials and suppliers available. IDTechEx's material database covers over 150 materials from 72 suppliers. The major categories are benchmarked in the report in terms of thermal conductivity, density, cost, and cost in the required application volume. The report also discusses the regulations that are currently in place and those being discussed. These feed into IDTechEx's market forecasts showing a greater adoption of fire protection materials per vehicle.	12.08.2025 09:00:00	Aug	news_2025-08-15_4.png	\images\news_2025-08-15_4.png	https://www.idtechex.com/en/research-report/fire-protection-materials-for-ev-batteries-2025-2035-markets-trends-and-forecasts/1068	idtechex.com
TVS Diode for high-speed Consumer Interfaces	TDK Corporation has expanded its TVS diode lineup ...	12517	Product Release	TVS Diode for high-speed Consumer Interfaces	TDK Corporation has expanded its TVS diode lineup with three models in the SD0201 series, tailored for high-speed consumer electronics interfaces. These TVS diodes offer compact protection for USB Type-C, HDMI, DisplayPort, and Thunderbolt connections in smartphones, laptops, tablets, wearables, and networking devices. Each component comes in a 0201 chip-scale package (CSP), measuring 0.58 x 0.28 x 0.15 mm³ (L x W x H) for space-constrained designs. Having working voltages of ±1 V, ±2 V, and ±3.6 V, the TVS diodes safeguard sensitive circuits from electrostatic discharge (ESD) and transient surges. This means they meet IEC 61000-4-2 standards with ESD discharge robustness up to ±15 kV and support surge current handling up to 7 A, depending on the variant. Their symmetrical design enables bidirectional protection and thus flexible PCB routing, while very low leakage currents and dynamic resistance as low as 0.16 Ω enhance application-level efficiency. The individual components differ in their DC working voltage and parasitic capacitance: the SD0201SL-S1-ULC101 has a working voltage of ±3.6 V and a parasitic capacitance of 0.65 pF, the SD0201-S2-ULC105 of ±2 V and 0.7 pF, and the SD0201SL-S1-ULC104 of ±1 V and 0.15 pF. A LTspice model library for SEED simulations for TVS diodes is available for download.	12.08.2025 08:30:00	Aug	news_2025-09-01_10.jpg	\images\news_2025-09-01_10.jpg	https://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-expands-ultra-low-voltage-tvs-diode-portfolio-for-high-speed-consumer-interfaces/3625224	tdk-electronics.tdk.com
eFuse Meets High Reliability Server Application Requirements	Alpha and Omega Semiconductor announced the releas...	12537	Product Release	eFuse Meets High Reliability Server Application Requirements	Alpha and Omega Semiconductor announced the release of its AOZ17517QI series, a 60A eFuse in a compact 5mm x 5mm QFN package. AOS optimized this eFuse product series for 12V power rails in servers, data centers, and telecom infrastructure. Due to high-reliability requirements for datacenter and telecom infrastructure products, all critical power rails are monitored and protected by an eFuse device to protect the main power bus from interruption due to abnormal load under fault conditions. AOS’ eFuse continuously monitors the current flowing through the power switch. If the current exceeds the set limit, the switch will limit the current to the maximum allowed. If the high current load persists, the switch will eventually turn off, protecting downstream loads from damage, thus acting as a fuse. The eFuse is constructed with AOS’ advanced co-packaging technology that combines a high-performance IC with protection features and the company’s latest high SOA Trench MOSFET. The AOZ17517QI series’ MOSFET offers low R<sub>DS(ON)</sub> (0.65mohm) that isolates the load from the input bus when the eFuse is off. These devices are designed to integrate accurate analog current and voltage monitoring signals, and designers can also use multiple eFuse devices in parallel for higher current applications. Multiple devices can operate concurrently and seamlessly distribute the current during the startup phase. In addition, the AOZ17517QI features startup SOA management and other protections, enabling a streamlined and glitch-free system power-up or the ability to hot plug into the backplane.	12.08.2025 08:30:00	Aug	news_2025-09-15_15.jpg	\images\news_2025-09-15_15.jpg	https://www.aosmd.com/news/alpha-and-omega-semiconductor-announces-advanced-efuse-meets-high-reliability-server	aosmd.com
Global Renewable Power installed Capacity to surge to 11.2 TW by 2035	Renewable resources, particularly solar photovolta...	12493	Industry News	Global Renewable Power installed Capacity to surge to 11.2 TW by 2035	Renewable resources, particularly solar photovoltaic (PV) and wind energy, are gaining a larger share in the energy portfolio. Driven primarily by declining costs and strong policy support, particularly for solar PV and wind energy, the global renewable power installed capacity is estimated to surge from 3.42 TW in 2024 to 11.2 TW by 2035, according to GlobalData. The company's latest report, "Renewable Energy: Strategic Intelligence", reveals that the global renewables market expanded from a cumulative installed capacity of 0.93 TW in 2015 to 3.42 TW by the end of 2024, representing a compound annual growth rate (CAGR) of 16 %. The total cumulative installed capacity is projected to record a CAGR of 11 % during the period 2024-35. Solar PV and wind power were significant contributors to the renewable energy sector, accounting for 56 % and 33 % of the total installed capacity in 2024, respectively. The APAC region has emerged as the largest market for solar PV and wind installed capacity, boasting 1.18 TW and 0.67 TW in 2024, respectively. Artificial intelligence is transforming the renewable energy sector by enhancing generation optimization, advancing grid management, and increasing efficiency across multiple systems. AI algorithms possess the capability to forecast renewable energy production, oversee grid operations in real-time, and refine energy storage strategies. These advancements contribute to heightened reliability and efficiency, thereby rendering renewable energy more effective and economical. Looking ahead, the onshore wind sector is forecasted to grow to $186.9 billion (CAGR: 4 %) and the offshore wind sector to $150.4 billion (CAGR: 14 %) by 2030.	12.08.2025 08:00:00	Aug	news_2025-08-15_3.png	\images\news_2025-08-15_3.png	https://www.globaldata.com/store/report/renewable-energy-theme-analysis/	globaldata.com
Europe remains committed to growing Offshore Wind Energy	A study conducted by Morningstar DBRS makes it ver...	12491	Industry News	Europe remains committed to growing Offshore Wind Energy	A study conducted by Morningstar DBRS makes it very clear: Europe remains an important market for offshore wind with rising relevance over the next few decades as it moves towards meeting its carbon emission reduction goals and increasing its energy independence. This contrasts sharply with the United States' path following President Trump's executive order on January 20, 2025, withdrawing all areas of the U.S. outer continental shelf from Offshore Wind Leasing. Europe has a long history of using offshore wind as part of its energy mix. The world's first offshore wind farm was completed in Denmark in 1991 by Orsted. The project consisted of 11 turbines with total generation capacity of 5 MW. The European offshore wind industry has grown significantly since then with Europe achieving 35 GW of installed generation by the end of the first half of 2024. Europe has a significant share of the offshore wind industry with 38% of the world's offshore wind capacity, with Germany and the U.K. as the main contributors. The European market is significantly larger than the U.S. offshore wind market with the U.S. Energy Information Administration reporting in December 2024 that there are only 130 MW of operating offshore wind projects and 6.9 GW planned by projects by 2027. Offshore wind represents a key part of Europe's goal to transition to renewable electricity sources and to achieve energy independence. Bloomberg NEF (BNEF) forecasts European wind capacity will reach 40 GW in 2025, increasing to 80 GW by 2030 and 274 GW by 2040, with the U.K., Germany, and the Netherlands contributing the most to growth.	12.08.2025 06:00:00	Aug	news_2025-08-15_1.png	\images\news_2025-08-15_1.png	https://dbrs.morningstar.com/research/449694	dbrs.morningstar.com
PwrSoC Registration is now OPEN!	The PwrSoC Workshop is a leading international eve...	12492	Event News	PwrSoC Registration is now OPEN!	The PwrSoC Workshop is a leading international event focused on power supply integration technologies, specifically Power Supply on Chip and Power Supply in Package. Co-sponsored by IEEE Power Electronics Society (IEEE PELS) and the Power Sources Manufacturers Association (PSMA), the workshop is held biennially at various locations worldwide, bringing together researchers and engineers from academia and industry to share the latest trends and discuss future directions. The 9th International Workshop on Power Supply on Chip (PwrSoC 2025) will take place from September 24 to 26, 2025, at Seoul National University in Seoul, Korea, with Professor Jaeha Kim serving as the General Chair and Local Host. The program will feature three plenary speeches delivered by distinguished industry leaders, providing valuable insights into the latest advancements in miniaturized and integrated power conversion and power management technologies. The technical program will follow a single-track format, featuring presentations from leading experts in power supply integration. Participants will also have the exclusive opportunity to visit SK Hynix's advanced semiconductor fabrication facility, gaining insights into one of the world's top memory manufacturers and its cutting-edge technologies.	11.08.2025 07:00:00	Aug	news_2025-08-15_2.jpg	\images\news_2025-08-15_2.jpg	http://pwrsocevents.com/	pwrsocevents.com
PCIM Asia Shanghai Conference 2025 programme to explore power electronics in AI and e-mobility	The PCIM Asia Shanghai Conference, Asia's foremost...	12498	Event News	PCIM Asia Shanghai Conference 2025 programme to explore power electronics in AI and e-mobility	The PCIM Asia Shanghai Conference, Asia's foremost academic gathering for the power electronics industry, returns to Shanghai this September. The 2025 programme will unite industry leaders, technical experts and academics to explore advanced solutions and future trends, highlighting developments in cutting-edge technologies such as silicon carbide (SiC), gallium nitride (GaN), motor drives and motion control, and more. Debuting at the conference is the new "Dialogue with Speakers" zone, where dedicated booths will provide a setting for more direct and in-depth interactions between speakers and attendees. Held in conjunction with the PCIM Asia Shanghai exhibition, the PCIM Asia Shanghai Conference addresses key industry topics including motion control systems and power supply solutions. The exhibition, in turn, showcases the latest technologies in power electronics components, power conversion, intelligent motion and more. The combined programme brings together leading specialists from the power electronics sector, application fields, and research institutions worldwide to share their knowledge and discuss the future of the industry.	07.08.2025 13:00:00	Aug	news_2025-08-15_8.jpg	\images\news_2025-08-15_8.jpg	https://pcimasia-shanghai.cn.messefrankfurt.com/shanghai/en/press/press-releases/2025/PCIM25_PR4.html	pcimasia-shanghai.com
1200 Volt Family of IGTO(t)	Pakal Technologies announced the commercial launch...	12522	Product Release	1200 Volt Family of IGTO(t)	Pakal Technologies announced the commercial launch of its 1200 Volt revolutionary IGTO(t) power semiconductor. The initial product is a Gen 2 1200 Volt, 40 Amp IGTO(t) and is available in a TO-247 package with co-packed diode. The 1200 V IGTO(t) is a direct drop-in upgrade for conventional IGBTs, using the same drivers and controllers and switching mechanism as a 1200 V IGBT. Independent tests confirm this Gen 2 IGTO(t) delivers up to 40% lower conduction losses at full current and 150°C compared to top-tier IGBTs. With this 1200 V conduction loss breakthrough, the IGTO(t) not only beats the best silicon, it also directly challenges (and in many conditions beats) the conduction loss performance of much more expensive Silicon Carbide (SiC) MOSFETS. The 1200 V IGTO(t) unlocks new levels of energy efficiency and cost savings across EVs, renewable energy, industrial automation and more. "Our Gen 2 1200 V device shows remarkable conduction loss advantages that are especially useful for <20 kHz applications." said Dr. Richard Blanchard, co-founder of Pakal Technologies. "Unlike IGBTs, the IGTO(t) device scales easily to much higher voltages. We expect to maintain and extend our high-current conduction loss advantage all the way to 6,500 V." The IGTO(t) is the first new high-voltage silicon power switch since the IGBT changed the game nearly 50 years ago. Pakal created the IGTO(t) to address the multibillion-dollar market gap between legacy silicon IGBTs and more expensive SiC products.	05.08.2025 13:30:00	Aug	news_2025-09-01_15.jpg	\images\news_2025-09-01_15.jpg	https://pakal-tech.com/	pakal-tech.com
Common Mode Choke	Schurter launched a family of vertically mountable...	12518	Product Release	Common Mode Choke	Schurter launched a family of vertically mountable chokes for PCBs. The current-compensated DKCV-1 chokes use nanocrystalline cores and are designed for currents from 0.5 to 10 A. They are suited for EMI suppression in industrial, medical, and test equipment up to 300 VAC/450 VDC. The DKCV-1 chokes can be mounted directly on the PCB with a vertical choke arrangement. All variants of the DKCV-1 family are ENEC, cUR and UR approved and have the same footprint on the PCB. Typical applications include switching power supplies, industrial, medical, laboratory and test equipment.	05.08.2025 09:30:00	Aug	news_2025-09-01_11.jpg	\images\news_2025-09-01_11.jpg	https://www.schurter.com/en/news/npi-video-common-mode-choke-dkcv-1	schurter.com
Ultra-Fast Current Shunt Series	PMK launched its UFCS devices (Ultra-Fast Current ...	12515	Product Release	Ultra-Fast Current Shunt Series	PMK launched its UFCS devices (Ultra-Fast Current Shunts), aiming to set a new industry standard for current measurement in high-performance power electronics. The reason why it is considered to set a standard is described by PMP as follows: "Designed to meet the demands of next-generation systems, UFCS shunts combine >1 GHz bandwidth with ultra-low insertion inductance (<200 pH), enabling unparalleled signal fidelity in the analysis of ultra-fast transient currents." The UFCS shunts are suited for applications involving GaN and SiC power semiconductors, where accurate switching loss measurements and pulse current analysis are critical. Their non-inductive frequency response ensures clean and reliable data acquisition, even in the demanding wide-bandgap environments. For measurements requiring high common-mode rejection, the UFCS can be paired with PMK's FireFly® optically isolated voltage probes. Alternatively, they can be connected directly to any 5 Ω input measuring device for general-purpose use. The first models available in the UFCS series include 11 mΩ, 24 mΩ, and 52 mΩ versions, covering a wide range of applications. 1 mΩ and 5 mΩ versions are said to follow shortly.	05.08.2025 06:30:00	Aug	news_2025-09-01_8.jpg	\images\news_2025-09-01_8.jpg	https://www.pmk.de/en/products/ufcs	pmk.de
Gaining In-Depth High Voltage Relay Switching Expertise	Pickering Electronics has established its High Vol...	12510	Industry News	Gaining In-Depth High Voltage Relay Switching Expertise	Pickering Electronics has established its High Voltage Reed Relay Resource Center, an online reference library of technical information for engineers building HV switching systems or looking to develop their knowledge. This digital reference library collects together deep technical expertise and video, application guide and case study resources, authored by subject matter experts from the company's Centre of Excellence for high voltage switching. Pickering has been active in high voltage reed relays for more than half a century, introducing its first HV reed relays in 1970. Pickering's High Voltage Reed Relay Resource Center contains information engineers need to know about high voltage reed relays, including how they work, what to look for when selecting a device, and how to use it to ensure the best performance in your HV switching application. Topics include the construction of a high-voltage reed relay, including the switch blades & gap, and magnetic screening but also AC and DC considerations as well as hot and cold switching. Furthermore, it deals with loads and in-rush currents, test methods and failure modes, including vacuum failure, plating material damage, and breakdown & arcing. On top of the Resource Center answers the question, why reed relays may be a better option for HV applications than competing technologies, such as electromechanical relays (EMRs) & solid-state relays (SSRs).	03.08.2025 08:00:00	Aug	news_2025-09-01_3.jpg	\images\news_2025-09-01_3.jpg	https://www.pickeringrelay.com/high-voltage-reed-relay-resource-center/	pickeringrelay.com
Power Modules for higher Currents	Würth Elektronik has expanded its MagI³C-VDLM...	12499	Product Release	Power Modules for higher Currents	Würth Elektronik has expanded its MagI³C-VDLM power module series with two new models. With output currents of 4 A and 5 A respectively, they further enhance the performance of the existing portfolio of compact DC/DC power supply modules. The modules are designed for input voltages from 4 to 36 V and come in a space-saving LGA-26 package (11 × 6 × 3 mm³). They provide an output voltage from 1 to 6 V and, like all power modules in the MagI³C-VDLM series, integrate the essential components for a DC/DC power supply in its package: switching regulator with integrated MOSFETs, controller, compensation circuitry, and a shielded inductor. The power modules are claimed to "maintain high efficiency across the entire output current range by automatically switching between operating modes based on load requirements". So, they contribute to a minimal output ripple, which is needed for precise and interference-sensitive applications. Typical applications include point-of-load DC/DC converters, industrial, medical, test and measurement equipment, or for supplying power to DSPs, FPGAs, MCUs, MPUs, and interfaces. The MagI³C-VDLM modules achieve peak efficiencies of up to 96 percent and impress with their EMC performance in accordance with EN55032 Class B / CISPR-32. Additional features include selectable switching frequencies, automatic PFM/PWM transition, and a sync function for synchronizing to individual clock frequencies.	30.07.2025 06:30:00	Jul	news_2025-08-15_9.jpg	\images\news_2025-08-15_9.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=magi3c-series-expanded	we-online.com
Webinar: How to Test GaN and SiC MOSFET and IGBT Devices	Join Teledyne LeCroy to learn more about how to te...	12495	Event News	Webinar: How to Test GaN and SiC MOSFET and IGBT Devices	Join Teledyne LeCroy to learn more about how to test and qualify GaN MOSFETs, SIC MOSFETs and Si IGBTs using the double-pulse test circuit and high voltage isolated probes. Learn how you can use your benchtop test instruments to effectively (and safely) analyse your circuits in a qualitative and quantitative manner.	29.07.2025 10:00:00	Jul	news_2025-08-15_5.jpg	\images\news_2025-08-15_5.jpg	https://go.teledynelecroy.com/l/48392/2025-07-17/8qmj6y	teledynelecroy.com
Gate driver photocouplers enhance MOSFETs and IGBTs switching efficiency	Toshiba Electronics Europe introduced gate driver ...	12502	Product Release	Gate driver photocouplers enhance MOSFETs and IGBTs switching efficiency	Toshiba Electronics Europe introduced gate driver photocouplers to control 1 A and 6 A class gate drive currents for small- to medium-capacity MOSFET and IGBT gate drives. The TLP579xH series is suitable for driving SiC MOSFETs and IGBTs in green energy and factory automation applications, including industrial photovoltaic (PV) inverters, uninterruptible power supplies (UPSs), and electric vehicle (EV) charging stations, which operate in harsh thermal environments. All three devices in the TLP579xH series are designed to drive small to medium capacity power devices as well as IGBTs. The TLP5791H has a performance of -1.0/+1.0 A for peak high-level/low-level output current (I<sub>OLH</sub>/I<sub>OHL</sub>), with an under voltage lock out (UVLO) threshold voltage (V<sub>UVLO+</sub>) of 9.5 V (max.), a UVLO threshold voltage (V<sub>UVLO-</sub>) of 7.5 V (min.), and a UVLO hysteresis voltage (V<sub>UVLOHYS</sub>) of 0.5 V (typ.). With the TLP5794H, the peak output current spans from -6.0/+4.0 A for I<sub>OLH</sub>/I<sub>OHL</sub>, with a Vsub>UVLO+</sub> of 13.5 V (max.), a V<sub>UVLO-</sub> of 9.5 V (min.), and V<sub>UVLOHYS</sub> of 1.5 V (typ.). The TLP5795H is capable of -4.5/+5.3 A for peak high-level/low-level output current (I<sub>OLH</sub>/I<sub>OHL</sub>), with V<sub>UVLO+</sub> of 13.5 V (max.), a V<sub>UVLO-</sub> of 11.1 V (min.), and V<sub>UVLOHYS</sub> of 1.0 V (typ.). The TLP579xH series is a rail-to-rail output device that enables switching characteristics with less voltage drop from the power supply voltage. It operates within a temperature range of -40 °C to +125 °C and is housed in a SO6L package, featuring a minimum creepage distance of 8.0 mm and an isolation voltage of 5000 V<sub>RMS</sub>.	29.07.2025 09:30:00	Jul	news_2025-08-15_12.jpg	\images\news_2025-08-15_12.jpg	https://toshiba.semicon-storage.com/eu/semiconductor/product/isolators-solid-state-relays/gate-driver-photocouplers/articles/lineup-expansion-of-photocouplers-for-mosfet-and-igbt-gate-driver-suitable-for-industrial-equipment.html	toshiba.semicon-storage.com
1200 V MOSFETs in a Q-DPAK Package	Infineon Technologies has launched the CoolSiC&tra...	12500	Product Release	1200 V MOSFETs in a Q-DPAK Package	Infineon Technologies has launched the CoolSiC™ MOSFETs 1200 V G2 in a top-side-cooled (TSC) Q-DPAK package. These devices deliver enhanced thermal performance, system efficiency, and power density. They were specifically designed for demanding industrial applications that require high performance and reliability, such as electric vehicle chargers, solar inverters, uninterruptible power supplies, motor drives, and solid-state circuit breakers. The CoolSiC 1200 V G2 technology enables up to 25 percent lower switching losses for equivalent R<sub>DS(on)</sub> devices, thereby increasing system efficiency by up to 0.1 %. Utilizing Infineon's .XT die attach interconnection technology, the G2 devices achieve more than 15 % lower thermal resistance and an 11 % reduction in MOSFET temperature compared to G1 family products. The R<sub>DS(on)</sub> values, range from 4 mΩ to 78 mΩ, while the technology supports overload operation up to a junction temperature (T<sub>vj</sub>) of 200 °C. The CoolSiC MOSFETs 1200 V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. Both variants are part of Infineon's broader X-DPAK top-side cooling platform. The standardized package height across all TSC variants – including Q-DPAK and TOLT – is 2.3 mm.	29.07.2025 07:30:00	Jul	news_2025-08-15_10.jpg	\images\news_2025-08-15_10.jpg	https://www.infineon.com/market-news/2025/INFGIP202507-128	infineon.com
Power Modules	The GRD-12A is a reference design board based on t...	12521	Product Release	Power Modules	The GRD-12A is a reference design board based on the latest generation of GAIA Converter COTS modules, intended to demonstrate the applicability and performances of converters from the MGDD series. It is a multiple outputs board fully configurable and capable of delivering up to 120 W spread over 3 main output channels and 2 auxiliary channels. It is protected in terms of inrush currents, spikes & surges and provides up to 7 outputs between 3.3 V and 52 V while complying with Mil-Standards 1275 (ground vehicle transients), 704 (airborne input voltage) and 461 (EMI/EMC) as well as ABD100 (aeronautical requirements) and DO-160 (civil aviation). At its input the GRD12-A-M – 120W COTS Power Module with a built-in hold-up function accepts 24/28 V<sub>DC</sub>.	28.07.2025 12:30:00	Jul	news_2025-09-01_14.jpg	\images\news_2025-09-01_14.jpg	https://www.gaia-converter.com/product-overview/power-solutions/grd-12a/	gaia-converter.com
Shielded Power Inductor	Bourns introduced its Model SRP1024HMCT shielded p...	12520	Product Release	Shielded Power Inductor	Bourns introduced its Model SRP1024HMCT shielded power inductor, which is manufactured using a hot press molding process with carbonyl powder. This model is available in a low profile package for the operating temperature range from -40 °C to +125 °C for use e. g. in point-of-load (PoL) converters and data center environments.	28.07.2025 11:30:00	Jul	news_2025-09-01_13.jpg	\images\news_2025-09-01_13.jpg	https://www.bourns.com/news/press-releases/pr/2025/07/28/bourns-introduces-shielded-power-inductor-model-featuring-high-heating-saturation-current-and-low-magnetic-field-radiation	bourns.com
TOLT-Packaged 80 V MXT MV MOSFET for E-Scooters and LEVs	Magnachip Semiconductor released an 80 V MXT MV MO...	12501	Product Release	TOLT-Packaged 80 V MXT MV MOSFET for E-Scooters and LEVs	Magnachip Semiconductor released an 80 V MXT MV MOSFET, MDLT080N017RH, featuring a TOLT (TO-Leaded Top-Side Cooling) package. The TOLT-packaged MOSFET delivers a major advancement in thermal management. Unlike conventional TOLL (TO-Leadless) packages that dissipate heat through the bottom, the TOLT package is engineered to release heat directly from the top via a mounted metal heat sink. This structure substantially reduces thermal resistance between the junction and the external environment, making it well-suited for thermally demanding applications, such as e-scooters and LEVs. Simulations and tests conducted by Magnachip demonstrated that this 80 V MV TOLT package solution achieved an average 22 % reduction in junction temperature compared to using standard TOLL packages. This improvement not only extends an application's lifespan, but also enhances the system reliability. Furthermore, the TOLT package enables compact, lightweight application designs thanks to its high power density and efficient thermal flow that. At a V<sub>GS</sub> of 10 V the R<sub>DSon</sub> is specified with 1.7 mΩ.	28.07.2025 08:30:00	Jul	news_2025-08-15_11.jpg	\images\news_2025-08-15_11.jpg	https://www.magnachip.com/magnachip-introduces-tolt-packaged-80v-mxt-mv-mosfet-for-e-scooters-and-levs/	magnachip.com
Reliable EMC Protection	The extended range of products from Schurter inclu...	12503	Product Release	Reliable EMC Protection	The extended range of products from Schurter includes high-performance EMC filters, chokes, and pulse transformers for a wide variety of applications – from industrial and medical technology to energy and automation systems. Included are power entry modules with integrated line filters (DG11 with thermal-magnetic circuit breaker), 1- and 3-phase block filters (FPAC RAIL, FMAB NEO, FMBC EP) as well as suppression chokes, magnetically compensated, linear, storage, and linear/saturating types (DKCV-1, DKUH-1), complemented by pulse transformers and customized filters and winding goods. For example, Schurter's single-phase and three-phase EMC filters, with and without IEC power plugs, for PCB or chassis mounting, meet international standards and cover current ranges from 0.5 A to 115 A at voltages up to 520 V. They thus offer reliable protection against conducted interference and contribute significantly to the electromagnetic compatibility of complex systems. The portfolio also includes chokes with SPICE simulation models, which enable precise circuit design even in the early development phase. For control cabinet applications, Schurter offers DIN rail components.	25.07.2025 10:30:00	Jul	news_2025-08-15_13.jpg	\images\news_2025-08-15_13.jpg	https://www.schurter.com/en/products-and-solutions/components/emc	schurter.com
Large-size Ferrite Cores with different Shapes	TDK Corporation added large-size ferrite cores wit...	12486	Product Release	Large-size Ferrite Cores with different Shapes	TDK Corporation added large-size ferrite cores with different core shapes. These are used in a range of industrial applications such as motor drives, EV charging stations, various railway/traction applications, power transformers, welding, medical, uninterruptible power supplies (UPS), solar inverters, and other renewable energy applications. These cores allow for optimizing magnetic design for efficiency and thermal performance. The standardized large-size core program contains E, U, I, PM, and PQ cores in the N27, N87, N88, N92, N95, and N97 power materials. Accessories like coil former and mounting hardware are available.	24.07.2025 11:30:00	Jul	news_2025-08-01_14.jpg	\images\news_2025-08-01_14.jpg	https://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-introduces-various-large-size-ferrite-cores-with-different-shapes-for-a-wide-range-of-industrial-applications-/3616864	tdk-electronics.tdk.com
Shielded Power Inductor Series	Bourns announced its SRP4020T series shielded powe...	12504	Product Release	Shielded Power Inductor Series	Bourns announced its SRP4020T series shielded power inductors. This series features a carbonyl powder core with "excellent thermal stability and magnetic performance", making it suitable for demanding environments. Its shielded construction suppresses magnetic interference and enhances Electromagnetic Compatibility (EMC). Offered in a (4.45 x 4.0 mm²), low-profile (1.8 mm) package, the SRP4020T Series supports operating temperatures up to +150 °C. The inductance range for this series is from 0.47 to 10 µH.	24.07.2025 11:30:00	Jul	news_2025-08-15_14.jpg	\images\news_2025-08-15_14.jpg	https://www.bourns.com/news/press-releases/pr/2025/07/24/bourns-introduces-shielded-power-inductor-series-designed-with-carbonyl-powder-core-delivering-high-saturation-current-capability	bourns.com
Company Location in South Africa added	Another Würth Elektronik branch opened in Brackenf...	12478	Industry News	Company Location in South Africa added	Another Würth Elektronik branch opened in Brackenfell, Western Cape, South Africa. The location operates under the name Wurth Electronics South Africa (Pty.) Ltd and will serve local customers, but will also be responsible for the markets of Botswana, Mauritius, Namibia, Tanzania and Zambia. Ahmet Çakir, who also heads the branch in Turkey, will take over the management of the new location, under the leadership of Rob Sperring, Vice President for Southern Europe, Middle East and Africa. The Wurth Electronics South Africa (Pty.) Ltd team currently consists of six employees. However, it will soon be expanded. The official opening ceremony for the new location will take place in early 2026. Four EMC seminars held by Würth Elektronik in South Africa's two largest cities, Cape Town and Johannesburg, have already been completed.	24.07.2025 11:00:00	Jul	news_2025-08-01_6.jpg	\images\news_2025-08-01_6.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=New-location-in-South-Africa	we-online.com
Collaboration with SiC-based PHEV Platform expanded	onsemi announced an expanded collaboration with Sc...	12511	Industry News	Collaboration with SiC-based PHEV Platform expanded	onsemi announced an expanded collaboration with Schaeffler through a new design win using onsemi's next-generation EliteSiC product line of silicon carbide MOSFETs. The onsemi solution will power the Schaeffler traction inverter for a leading global automaker's plug-in hybrid electric vehicle (PHEV) platform. The semiconductor company claims that "this silicon carbide-based solution offers the lowest on-state resistance to provide highest peak power compared to other SiC solutions in its class". This next step builds on the existing long-term collaboration between onsemi and Schaeffler (formerly Vitesco Technologies), extending the companies' multi-year collaboration in electric mobility solutions.	24.07.2025 09:00:00	Jul	news_2025-09-01_4.jpg	\images\news_2025-09-01_4.jpg	https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-and-schaeffler-expand-collaboration-with-new-elitesic-based-phev-platform	onsemi.com
Simplifying Reverse Battery Polarity and Overvoltage Protection in Automotive Architectures	Diodes Incorporated introduced the AP74502Q and AP...	12507	Product Release	Simplifying Reverse Battery Polarity and Overvoltage Protection in Automotive Architectures	Diodes Incorporated introduced the AP74502Q and AP74502HQ automotive-compliant 80 V ideal diode controllers, providing protection against reverse connections and voltage transients. Typical applications include ADAS, body control modules, infotainment systems, exterior lighting, and USB charging ports. They also include a load disconnect function in case of overvoltage and undervoltage events, while they are suitable for all 12 V, 24 V and 48 V systems. The AP74502Q and AP74502HQ controllers also support input voltages as low as 3.2 V for operation even during severe cold crank conditions. Both devices share a peak gate turn-off sink current of 2.3 A, enabling rapid turn-off of the external N-channel MOSFETs when required, for example, during overvoltage or undervoltage events. When the charge pump is enabled, the operating quiescent current is 62 µA, and 1 &mirco;A in disabled mode. The AP74502Q features a peak gate source current, typically 60 µA, which provides a smooth start-up with inherent inrush current control. Both, AP74502Q and AP74502HQ are available in the industry-standard SOT28 package with an operating temperature range from -40 °C to +125 °C.	23.07.2025 14:30:00	Jul	news_2025-08-15_17.jpg	\images\news_2025-08-15_17.jpg	https://www.diodes.com/about/news/press-releases/80v-low-iq-ideal-diode-controllers-from-diodes-incorporated-simplify-reverse-battery-polarity-and-overvoltage-protection-in-modern-automotive-architectures	diodes.com
Power MOSFETs in specific Package	Toshiba Electronics Europe launched two N-channel ...	12519	Product Release	Power MOSFETs in specific Package	Toshiba Electronics Europe launched two N-channel power MOSFETs, the 80 V TPM1R908QM and the 150 V TPM7R10CQ5. These latest offerings use Toshiba's SOP Advance(E) package, designed to significantly enhance performance in switched-mode power supplies for demanding industrial equipment, including data centres and communication base stations. This SOP Advance(E) package is said to "mark a substantial improvement over Toshiba's existing SOP Advance(N) package, reducing package resistance by approximately 65 % and thermal resistance by approximately 15 %". The 80 V TPM1R908QM exhibits a reduction in drain-source on-resistance of approximately 21 % and channel-case thermal resistance of approximately 15 % when compared to Toshiba's existing product, the TPH2R408QM, of same voltage rating. Similarly, the 150 V TPM7R10CQ5 achieves approximately 21% lower R<sub>DS(ON)</sub> and approximately 15% lower R<sub>th(ch-c)</sub> than Toshiba's existing TPH9R00CQ5, also at the same voltage. The TPM7R10CQ5 is equipped with a high speed body diode for increased efficiency in synchronous rectification. Toshiba also provides a G0 SPICE model for quick circuit function verification, alongside highly accurate G2 SPICE models that precisely reproduce transient characteristics.	20.07.2025 10:30:00	Jul	news_2025-09-01_12.jpg	\images\news_2025-09-01_12.jpg	https://toshiba.semicon-storage.com/eu/semiconductor/product/mosfets/12v-300v-mosfets/articles/n-channel-power-mosfets-for-industrial-equipment-reduce-on-resistance-by-using-sop-advance-e-package.html	toshiba.semicon-storage.com
Professorship to Accelerate Wide Bandgap Semiconductor Research	Global semiconductor manufacturer Nexperia and the...	12474	Industry News	Professorship to Accelerate Wide Bandgap Semiconductor Research	Global semiconductor manufacturer Nexperia and the Hamburg University of Technology (TU Hamburg) have launched an endowed professorship in power electronic devices – a crucial field for the advancement of energy-efficient technologies. The position, held by Prof. Dr.-Ing. Holger Kapels will drive research into next-generation semiconductor components and train highly skilled engineers at TU Hamburg’s School of Electrical Engineering, Computer Science and Mathematics. As part of this initiative, Prof. Kapels will also lead the newly founded Institute for Power Electronic Devices. In his inaugural lecture, titled "Innovative Power Semiconductor Devices as a Key Technology for an Electrified Future," Prof. Kapels outlined how compound semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) are enabling transformative improvements in energy efficiency – particularly in electric vehicles, industrial systems, and data centers. Wide bandgap (WBG) materials such as SiC, GaN, and aluminum scandium nitride (AlScN) allow for higher switching frequencies, lower conduction losses, and more compact device footprints. compared to traditional silicon. The new institute will focus on power semiconductors based on Silicon, SiC, GaN and aluminum scandium nitride (AlScN), new device architectures, including vertical GaN structures and machine-learning-based fault prediction systems. Additional research priorities include modeling the reliability and ruggedness of power devices under extreme operating conditions.	18.07.2025 07:00:00	Jul	news_2025-08-01_2.JPG	\images\news_2025-08-01_2.JPG	https://www.nexperia.com/about/news-events/news/nexperia-and-tu-hamburg-launch-endowed-chair-in-power-electronics-to-drive-energy-efficient-innovation	nexperia.com
Two-Component Thermal Gap Filler and CIP Material	The Chomerics Division of Parker Hannifin Corporat...	12489	Product Release	Two-Component Thermal Gap Filler and CIP Material	The Chomerics Division of Parker Hannifin Corporation introduced a two-component (2k) dispensable thermal gap filler and cure-in-place (CIP) material offering 3.5 W/m-K thermal conductivity. THERM-A-GAP™ CIP 35E provides an alternative to hard-curing dispensable materials and an improvement over application methods associated with thermal gap pads. After curing, THERM-A-GAP CIP 35E serves as a low-hardness (50 Shore 00) gap pad that conforms to irregular shapes and maintains effective contact without transmitting compressive forces to adjacent electronics. Its ability to cure into complex geometries is suited for the cooling of multi-height components on a printed circuit board (PCB) without the expense of a moulded sheet. The product also offers vibration damping attributes, while the dielectric strength is 8 kVAC/mm (ASTM D149 test method) and the volume resistivity is 10<sup>13</sup> &ohm;cm (ASTM D257). At 1000 kHz its dielectric constant is specified 8.0 dielectric (ASTM D150); and the dissipation factor at 1,000 kHz is 0.009 (Chomerics CHO-TM-TP13).	17.07.2025 14:30:00	Jul	news_2025-08-01_17.jpg	\images\news_2025-08-01_17.jpg	https://ph.parker.com/us/en/product-list/therm-a-gap-cip-35e-thermally-conductive-cure-in-place-compound	ph.parker.com
Partnership on Silicon Carbide Solutions for Power Management	Microchip Technology announced that under a new pa...	12476	Industry News	Partnership on Silicon Carbide Solutions for Power Management	Microchip Technology announced that under a new partnership agreement with Delta Electronics the companies will collaborate to use Microchip’s mSiC™ products and technology in Delta’s designs. The synergies between the companies aim to accelerate the development of innovative SiC solutions, energy-saving products and systems that enable a more sustainable future. Delta intends to leverage Microchip’s experience and technology in SiC and digital control to accelerate time to market of its solutions for high-growth market segments such as AI, mobility, automation and infrastructure. This agreement prioritizes the companies’ resources to validate Microchip’s mSiC solutions to fast-track implementation in Delta’s designs and programs. Other key advantages of the agreement are top-tier design support including technical training as well as insight into R&D activities and early access to product samples.	17.07.2025 09:00:00	Jul	news_2025-08-01_4.jpg	\images\news_2025-08-01_4.jpg	https://www.microchip.com/en-us/about/news-releases/products/microchip-enters-into-partnership-agreement-with-delta-electronics	microchip.com
150 V and 200 V MOSFETs “with industry-leading Figures of Merit”	iDEAL Semiconductor’s SuperQ™ technology has...	12483	Product Release	150 V and 200 V MOSFETs “with industry-leading Figures of Merit”	iDEAL Semiconductor’s SuperQ™ technology has entered full production, with the first products being 150 V MOSFETs. A family of 200 V MOSFETs is sampling. SuperQ is said to be “the first significant advance in silicon MOSFET design in more than a quarter of a century and delivers unmatched performance and efficiency in silicon power devices”. It almost doubles the n-conduction region (up to 95%) and reduces switching losses by up to 2.1x versus competing devices while operation at up to 175 °C junction temperature. The first product in iDEAL’s 150 V MOSFET series, iS15M7R1S1C, is a 6.4 m&ohm; MOSFET. It is available immediately in a 5 x 6 mm<sup>2</sup> PDFN package. The SMT package includes exposed leads to simplify assembly and improve board level reliability. The 200 V family includes the iS20M6R1S1T, a 6.1 m&ohm; MOSFET in a 11.5 x 9.7 mm<sup>2</sup> TOLL package. This has an R<sub>DSon</sub> of 6.1 m&ohm;, which is claimed to be “10% lower than the current industry leader and 36% lower than the next best competitor”. The company is also sampling 200 V MOSFETs in TOLL, TO-220, D2PAK-7L and PDFN packages. 250V, 300 V and 400 V MOSFET platforms are promised to be coming soon.	17.07.2025 08:30:00	Jul	news_2025-08-01_11.jpg	\images\news_2025-08-01_11.jpg	https://idealsemi.com/ideals-superq-technology-powers-into-production-reveals-150-v-and-200-v-mosfets-with-industry-leading-figures-of-merit/	idealsemi.com
Bipolar Junction Transistors in clip-bonded FlatPower Packages	Nexperia expanded its bipolar junction transistor ...	12505	Product Release	Bipolar Junction Transistors in clip-bonded FlatPower Packages	Nexperia expanded its bipolar junction transistor (BJTs) portfolio by introducing the MJPE-series with 12 MJD-style BJTs in clip-bonded FlatPower (CFP15B) packaging. Compared to traditional DPAK-packaged MJD transistors, MJPE-parts in CFP15B deliver significant board space savings and cost advantages without compromising performance. Six of these devices are automotive-qualified (e.g. MJPE31C-Q) and six industrial-grade types (e.g. MJPE44H11), with V<sub>CEO</sub> ratings of 50 V, 80 V, and 100 V, and collector currents of 2 A, 3 A, and 8 A. Both NPN and PNP variants are available. Used in diverse applications such as power supplies for battery management systems, on-board chargers in electric vehicles, and backlighting for video displays, the CFP15B-packaged BJTs maintain equivalent thermal performance (up to 175 °C operation for automotive applications) while offering a 53% smaller soldering footprint. Furthermore, the clip technology of the CFP15B package supports specific mechanical robustness while also enhancing the electrical and thermal performance of these devices.	16.07.2025 12:30:00	Jul	news_2025-08-15_15.jpg	\images\news_2025-08-15_15.jpg	https://www.nexperia.com/about/news-events/press-releases/nexperia-brings-the-benefits-of-clip-bonded-flatpower-packaging-to-bipolar-junction-transistors	nexperia.com
30 Years of Openair-Plasma Technology	In early July Plasmatreat celebrated the 30th anni...	12475	Industry News	30 Years of Openair-Plasma Technology	In early July Plasmatreat celebrated the 30th anniversary of the patent application for its Openair-Plasma technology with its Technology Days 2025 at the headquarters in Steinhagen, Germany. Due to its process stability, efficiency, environmental friendliness, and ease of integration into production environments, the Openair-Plasma technology has changed numerous industrial processes worldwide. More than 200 guests and 16 industry partners joined the Plasmatreat team for the celebration. This plasma technology is used to give materials special properties for further processing including ultra-fine cleaning, activation, reduction, and coatings for a wide range of industrial applications. Plasmatreat technology is currently used in more than 100 automotive and battery production applications. E. g. PlasmaPlus PT-Bond technology serves as an environmentally friendly bonding agent that is often used to bond different materials in a stable, weather-resistant way. Eight interactive workshops complemented the event. For example, the workshop "REDOX effect: Reduction to High-Performance Coatings” showed how oxidized and contaminated metal surfaces are cleaned in the semiconductor industry to meet the strictest standards for manufacturing electronic components. Plasma systems and reduction were also demonstrated live.	16.07.2025 08:00:00	Jul	news_2025-08-01_3.jpg	\images\news_2025-08-01_3.jpg	https://www.plasmatreat.com/en/news-and-stories/news-and-press/detail/30-years-of-atmospheric-pressure-plasma-technology	plasmatreat.com
TVS Diodes cut Clamping Voltage	Littelfuse launched the 5.0SMDJ-FB TVS Diode Serie...	12490	Product Release	TVS Diodes cut Clamping Voltage	Littelfuse launched the 5.0SMDJ-FB TVS Diode Series, a 5000 W surface-mount solution in a DO-214AB package engineered to protect sensitive DC power lines from overvoltage transients. This series incorporates foldback technology, which delivers up to 15% lower clamping voltage (V<sub>C</sub>) compared to traditional solutions, while maintaining Breakdown Voltage (V<sub>BR</sub>) above the Reverse Standoff Voltage (V<sub>R</sub>). It is a drop-in replacement to legacy 5.0SMDJ series with the same DO-214AB (SMC) footprint. These devices protect DC power lines across a variety of demanding applications, including Power over Ethernet (PoE) systems, AI and data center servers, ICT equipment power supplies and industrial DC power distribution.	15.07.2025 15:30:00	Jul	news_2025-08-01_18.jpg	\images\news_2025-08-01_18.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/new-littelfuse-tvs-diodes-cut-clamping-voltage-by-up-to-15-for-dc-line-protection	littelfuse.com
1 W Current Sense Chip Resistor Series	Stackpole Electronics expanded the CSSH Series of ...	12485	Product Release	1 W Current Sense Chip Resistor Series	Stackpole Electronics expanded the CSSH Series of current sense chip resistors with a 0805 version for high power density applications. This component is designed to be used in power modules, frequency converters, battery management systems, as well as automotive and EV controls. The CSSH0805 delivers 1 W power handling in a 0805 footprint. With resistance values as low as 0.5 milliohm and TCR from 50 to 100 ppm, it matches the performance of larger 1206 and 2010 resistors.	14.07.2025 10:30:00	Jul	news_2025-08-01_13.png	\images\news_2025-08-01_13.png	https://www.seielect.com/news/en/20250714%20cssh0805.pdf	seielect.com
Jennifer Lloyd Announced Chief Executive Officer	Power Integrations announced that Jennifer A. Lloy...	12473	People	Jennifer Lloyd Announced Chief Executive Officer	Power Integrations announced that Jennifer A. Lloyd, PhD will be the company’s next chief executive officer, succeeding Balu Balakrishnan, who has served as CEO since 2002. A former member of Power Integrations’ board of directors, Dr. Lloyd has been reappointed to the company’s board. Dr. Lloyd holds doctoral, master’s and bachelor’s degrees in electrical engineering and computer science from the Massachusetts Institute of Technology. Author of numerous technical papers and recipient of eight U.S. patents, she has also been active in the IEEE community, having served on the technical program committee for the International Solid-State Circuits Conference (ISSCC), the Custom Integrated Circuits Conference (CICC) and the VLSI Symposia (VLSI). Mr. Balakrishnan plans to serve as executive chairman of Power Integrations’ board of directors for approximately six months to ensure a smooth leadership transition; he is expected to remain a non-executive member of the board thereafter. Bala Iyer will remain in the role of lead independent director.	14.07.2025 06:00:00	Jul	news_2025-08-01_1.jpg	\images\news_2025-08-01_1.jpg	https://investors.power.com/news/news-details/2025/Power-Integrations-Names-Jennifer-Lloyd-as-Its-Next-CEO/default.aspx	power.com
dataTec Innovation Day	dataTec and selected partner companies are hosting...	12439	Event News	dataTec Innovation Day	dataTec and selected partner companies are hosting an Innovation Day on September 25, 2025, in Stuttgart - bringing together theory, practice, and product worlds. Experience the latest developments up close and discover how ideas turn into real solutions. A day full of knowledge, exchange, and hands-on experience. Whether you're looking to dive deep into a specific topic or gain a broad overview, Innovation Day offers valuable insights for engineers, technicians, developers, users, and decision-makers.	11.07.2025 06:00:00	Jul	news_2025-07-15_1.jpg	\images\news_2025-07-15_1.jpg	https://www.datatec.eu/de/en/innovationstag	datatec.eu
47 µF Multilayer Ceramic Capacitor in 0402-inch Size	Murata has begun “the world’s first mass productio...	12488	Product Release	47 µF Multilayer Ceramic Capacitor in 0402-inch Size	Murata has begun “the world’s first mass production of the 0402-inch size (1.0 × 0.5 mm<sup>2</sup>) multilayer ceramic capacitors (MLCC) with a capacitance of 47 µF. The devices are available in two variants with different temperature characteristics. Compared to Murata’s conventional 0603-inch size product with the same capacitance, this new capacitor reduces mounting area by approximately 60 %. Additionally, it delivers about 2.1 times the capacitance of Murata’s previous 22 µF product in the same 0402-inch size. The MLCC is available in two variants – the X5R (EIA) GRM158R60E476ME01 with an operating temperature range of -55 to +85 °C, and the X6S (EIA) GRM158C80E476ME01 with an operating temperature range of -55 to +105 °C. Both devices feature a ±20% tolerance and rated voltage of 2.5Vdc.	10.07.2025 13:30:00	Jul	news_2025-08-01_16.jpg	\images\news_2025-08-01_16.jpg	https://www.murata.com/en-eu/news/capacitor/ceramiccapacitor/2025/0710	murata.com
Semi-Shielded Power Inductors	Bourns has added five product series to the existi...	12487	Product Release	Semi-Shielded Power Inductors	Bourns has added five product series to the existing Bourns SRN-BTA family of semi-shielded power inductors. The semi-shielded construction combines the advantages of both non-shielded and shielded inductor designs. The five additional devices use bottom-soldered lead-wires for increased mechanical strength and stability in applications in automotive systems, DC/DC converters, and power supplies across consumer, industrial and telecom electronics. These models are AEC-Q200 compliant and automotive grade.	10.07.2025 12:30:00	Jul	news_2025-08-01_15.jpg	\images\news_2025-08-01_15.jpg	https://www.bourns.com/news/press-releases/pr/2025/07/10/bourns-expands-semi-shielded-power-inductor-portfolio-with-new-series-featuring-higher-maximum-inductance-values	bourns.com
Level 3 SPICE Models featuring enhanced Simulation Speed	ROHM has announced the release of new Level 3 (L3)...	12484	Product Release	Level 3 SPICE Models featuring enhanced Simulation Speed	ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs were precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement. The L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase. By the end of April 2025, ROHM has released 37 L3 models for its 4<sup>th</sup> Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.	10.07.2025 09:30:00	Jul	news_2025-08-01_12.jpg	\images\news_2025-08-01_12.jpg	https://www.rohm.com/news-detail?news-title=2025-07-10_topics_spice&defaultGroupId=false	rohm.com
1200 V SiC Schottky Diodes	Nexperia announced the addition of two 1200 V 20 A...	12482	Product Release	1200 V SiC Schottky Diodes	Nexperia announced the addition of two 1200 V 20 A silicon carbide Schottky diodes. The PSC20120J and PSC20120L have been designed to address ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are suited for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications. These Schottky diodes deliver temperature-independent capacitive switching and zero recovery behavior while it is claimed that the “switching performance is almost entirely independent of current and switching speed variations”. This PSC20120J is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount device power plastic package, while the PSC20120L is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package suited for operating temperatures up to 175 °C.	10.07.2025 07:30:00	Jul	news_2025-08-01_10.png	\images\news_2025-08-01_10.png	https://www.nexperia.com/about/news-events/press-releases/nexperia-boosts-wide-bandgap-portfolio-with-1200-V-SiC-Schottky-diodes-for-power-intense-infrastructure	nexperia.com
GaN-Based Motor Drive Reference Design for Humanoid Robots	Efficient Power Conversion Corporation (EPC) intro...	12481	Product Release	GaN-Based Motor Drive Reference Design for Humanoid Robots	Efficient Power Conversion Corporation (EPC) introduces the EPC91118, which is claimed to be “the first commercially available reference design to integrate gallium nitride (GaN) IC technology for humanoid robot motor joints”. Optimized for space-constrained and weight-sensitive applications such as humanoid limbs and compact drone propulsion, the EPC91118 delivers up to 15 A<sub>RMS</sub> per phase from a 15 V to 55 V DC input in a compact circular form factor. At the heart of the EPC91118 is the EPC23104 ePower™ Stage IC, a monolithic GaN IC that enables higher switching frequencies and reduced losses. The GaN-based power stage is combined with current sensing, a rotor shaft magnetic encoder, a microcontroller, RS485 communications, and 5 V and 3.3 V power supplies - all on a single board that fits entirely within a 32 mm diameter footprint. Each of the phases of a 3-phase BLDC motor can be driven with 15 A<sub>RMS</sub> at a PWM frequency of 100 kHz with 50 ns dead time. The fully integrated board includes a controller, sensor and power conversion and uses MLCC-only DC link capacitors to reduce size and to increase liability. While the inverter has a diameter of 32 mm, the external frame’s diameter is 55 mm.	10.07.2025 06:30:00	Jul	news_2025-08-01_9.jpg	\images\news_2025-08-01_9.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3226/first-gan-based-motor-drive-reference-design-for-humanoid-robots-delivers-up-to-15-arms-in-an-ultra-compact-format	epc-co.com
Compact MOSFET for Fast Charging Applications	ROHM has developed a 30 V N-channel MOSFET named A...	12453	Product Release	Compact MOSFET for Fast Charging Applications	ROHM has developed a 30 V N-channel MOSFET named AW2K21 in a common-source configuration that achieves "an industry-leading ON-resistance of 2.0 mΩ (typ.) in a compact 2.0 mm × 2.0 mm package". Compact devices featuring large-capacity batteries, such as smartphones, need fast charging functionalities requiring bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. The maximum current rating for these applications is 20A, with a breakdown voltage between 28 V and 30 V, and an ON-resistance of 5 mΩ or less. The AW2K21 consists of two MOSFETs integrated into a single package, allowing a single part to support bidirectional protection applications. Application examples are smartphones, VR headsets, compact printers, tablets, wearables, LCD monitors, laptop computers, portable gaming consoles or drones.	08.07.2025 13:30:00	Jul	news_2025-07-15_15.jpg	\images\news_2025-07-15_15.jpg	https://www.rohm.com/news-detail?news-title=2025-07-08_news_mosfet&defaultGroupId=false	rohm.com
Avnet announces Gilles Beltran as new President	Avnet has appointed Gilles Beltran as President of...	12480	People	Avnet announces Gilles Beltran as new President	Avnet has appointed Gilles Beltran as President of Avnet EMEA. Currently President of Avnet Silica, one of Avnet’s European semiconductor specialist divisions, Gilles Beltran will be succeeding Slobodan Puljarevic and Mario Orlandi, who have co-led the EMEA region with distinction for seven years. As the EMEA President, Gilles Beltran will have the Presidents of the Avnet Abacus, EBV Elektronik, and Avnet Silica business units reporting to him. Gilles Beltran joined Avnet Silica in 2002, bringing more than two decades of company-specific experience and know-how to this new role – including four years as President of Avnet Silica.	07.07.2025 13:00:00	Jul	news_2025-08-01_8.jpg	\images\news_2025-08-01_8.jpg	https://news.avnet.com/press-releases/press-release-details/2025/Avnet-announces-Gilles-Beltran-as-new-President-2025-L2mYakgpJA/default.aspx	avnet.com
Supervisory Board appoints Alexander Gorski Chief Operations Officer	Dr. Rutger Wijburg, Member of the Management Board...	12443	People	Supervisory Board appoints Alexander Gorski Chief Operations Officer	Dr. Rutger Wijburg, Member of the Management Board and Chief Operations Officer (COO) of Infineon Technologies, will resign from his position at the end of the fiscal year on 30 September 2025 at his own request and will retire after being a member of the Management Board of Infineon Technologies and Chief Operations Officer since April 2022. The Supervisory Board has appointed Alexander Gorski as his successor, effective as of 1 October 2025. Alexander Gorski is currently Executive Vice President and Head of Frontend Operations at Infineon and will be responsible for Operations, Procurement, Supply Chain and Quality Management in his new position as COO. His mandate as Chief Operations Officer will last for three years as is customary for first appointments. As Head of Backend and later as Head of Frontend Operations, Alexander Gorski has strategically developed Infineon's manufacturing landscape over the last few years. After completing his MBA at the University of Regensburg, he began his career at Infineon (until 1999 Siemens) in 1998 and subsequently took on various management positions in the areas of Operations, Supply Chain and Sales. Alexander Gorski worked for a solar company as a board member and managing director for seven years. He returned to Infineon in 2016 as COO of the Power & Sensor Systems division, becoming Head of Backend in 2021 and Head of Frontend in 2024.	07.07.2025 10:00:00	Jul	news_2025-07-15_5.jpg	\images\news_2025-07-15_5.jpg	https://www.infineon.com/press-release/2025/INFXX202507-123	infineon.com
ESD Protection Diodes for 48 V EV Communications Networks	Nexperia introduced "the industry's first ESD diod...	12452	Product Release	ESD Protection Diodes for 48 V EV Communications Networks	Nexperia introduced "the industry's first ESD diodes designed to protect 48 V automotive data communications networks against the destructive effects of electrostatic discharge (ESD) events". These six AEC-Q101 qualified devices covers the required higher reverse working maximum voltage (V<sub>RWM</sub>) for increasingly common 48 V board nets. This saves PCB space and system cost while maintaining signal integrity even at higher data rates. While data communications protocols like CAN and CAN-FD, as well as LIN and FlexRay have been around for several decades, their proven reliability in lower speed applications means they continue to feature in even the most recent automobiles, including (H)EVs. However, unlike conventional internal combustion engine powered vehicles that have a 12 V battery, or commercial vehicles that feature a 24 V battery, the higher efficiency requirements of EVs and HEVs mean they are increasingly moving towards using a 48 V battery to power various electrical systems, including these legacy communications networks. The family consists of ESD diodes with 54 V (PESD2CANFD54VT-Q and PESD2CANFD54LT-Q), 60 V (PESD2CANFD60VT-Q and PESD2CANFD60LT-Q) and 72 V (PESD2CANFD72VT-Q and PESD2CANFD72LT-Q) maximum V<sub>RWM</sub>. These devices with a capacitance down to 3.4 pF are packaged in a standard SOT23 package. The optimized capacitance ensures that signal integrity is not impacted even in higher-speed protocols like CAN-FD.	02.07.2025 12:30:00	Jul	news_2025-07-15_14.jpg	\images\news_2025-07-15_14.jpg	https://www.nexperia.com/about/news-events/press-releases/Nexperia-releases-industry-s-first-ESD-protection-diodes-for-48-V-EV-communications-networks	nexperia.com
Steve Sanghi to Continue as CEO and President	Microchip Technology Incorporated announced that S...	12444	People	Steve Sanghi to Continue as CEO and President	Microchip Technology Incorporated announced that Steve Sanghi has agreed to continue to serve as the company's Chief Executive Officer and President on a permanent basis. Mr. Sanghi had been serving in such roles on an interim basis since November 2024. Mr. Sanghi will also continue to serve as Chair of the Microchip Board of Directors. Prior to his retirement as Microchip's CEO in 2021, Mr. Sanghi had served as Microchip's CEO for almost 30 years. Mr. Sanghi commented, "I have been a leader of Microchip for over 30 years and look forward to continuing to serve the company on a long-term basis. Although several of the elements of our recovery plan have been completed or substantially implemented, some of the other elements of the plan, such as achieving our long-term operating model, will require sustained efforts. I am thankful that the Board is entrusting me to continue to guide the company towards achievement of its goals."	02.07.2025 11:00:00	Jul	news_2025-07-15_6.jpg	\images\news_2025-07-15_6.jpg	https://ir.microchip.com/news-events/press-releases/detail/1322/steve-sanghi-to-continue-as-microchip-ceo-and-president-on-a-permanent-basis	microchip.com
Acquisition to expand T&M Portfolio for Power Electronics	Rohde & Schwarz has acquired ZES ZIMMER Electronic...	12442	Industry News	Acquisition to expand T&M Portfolio for Power Electronics	Rohde & Schwarz has acquired ZES ZIMMER Electronic Systems GmbH. The privately owned company based in Oberursel/Germany, has been designing, developing and manufacturing high-precision power measurement equipment for four decades. The acquisition complements the Rohde & Schwarz (R&S) test and measurement product portfolio and is considered by R&S to be "an important step that contributes to the company's long-term growth strategy and will benefit the customers of both companies". The family owned ZES ZIMMER Electronic Systems with around sixty employees will be fully integrated into the Rohde & Schwarz group. The location will be retained and will continue to be used for power measurement equipment.	02.07.2025 09:00:00	Jul	news_2025-07-15_4.jpg	\images\news_2025-07-15_4.jpg	https://www.rohde-schwarz.com/about/news-press/all-news/rohde-schwarz-acquires-zes-zimmer-electronic-systems-gmbh-and-expands-its-t-m-portfolio-for-power-electronics-press-release-detailpage_229356-1571283.html	rohde-schwarz.com
Series of DC Energy Meters for Fast and Megawatt EV Chargers	LEM introduced the DCES600 and DCES1500 meters to ...	12454	Product Release	Series of DC Energy Meters for Fast and Megawatt EV Chargers	LEM introduced the DCES600 and DCES1500 meters to enable DC charging infrastructure manufacturers to design both fast and megawatt charging solutions, with kilowatt-hour (kWh) billing services in applications up to e-truck charging. They are designed to achieve class B accuracy at charger level with currents of up to 1500 A, at operating temperatures from –40 °C to +85 °C without derating. Their accuracy is maintained across the entire current range, for precise measurements throughout the full charging cycle, from high currents at the start to low currents near completion. Designers can access the DCES meters over an RS485 communication interface that provides cybersecurity features. These features include authentication of measurements using digital signatures, and facilities that enable secure remote maintenance and firmware updates. LEM is also offering a set of application programming interfaces (APIs) for software integration, and other software tools to ease testing and product integration. The DCES meters are available with an optional remote display unit, the RDU, which can be mounted on a front panel, DIN rail, or base plate without needing additional connections, such as communications lines or power sources, other than its link to the DCES meters. The devices offer real-time reporting of voltage, current, temperature and energy. LEM is now in the process of the certification of the DCES series by the end of the year. The DCES meters will then be compliant with European regulations such as MID 2014/32/EU, the EU's Directive on measuring instruments, and with Eichrecht, the German calibration law.	01.07.2025 14:30:00	Jul	news_2025-07-15_16.jpg	\images\news_2025-07-15_16.jpg	https://www.lem.com/en/dces	lem.com
Board-mount EMI Filters	TDK Corporation introduced the TDK-Lambda RGF boar...	12506	Product Release	Board-mount EMI Filters	TDK Corporation introduced the TDK-Lambda RGF board-mount EMI filters. Suitable for power supplies with high input current requirements, these 20 and 40 A filters are designed to provide differential mode filtering. The RGF filters are encapsulated for protection in harsh environments, measure 52.8 x 35.2 x 12.7 mm³ in size, and feature a 5-sided metal case. The design includes two threaded and two non-threaded mounting holes, suited for cooling in both conduction and convection-cooled systems. Applications include harsh industrial, commercial-off-the-shelf (COTS), test and measurement, communications, broadcast, and robotics. The input voltage ranges from 0 to 80 V and withstands input transients of up to 100 V for 100 ms durations. The operating case temperature is between -40 to +120 °C, with a qualified Thermal Cycling Test (TCT) of 700 cycles, or -40 to +125 °C with a 60 °C/minute ramp, and a 30 minute dwell time. The RGF filters are compliant to MIL-STD-810G 516.6 Procedure I & IV for shock and MIL-STD-810G 514.6 Procedure I, Cat 10 for vibration.	01.07.2025 13:30:00	Jul	news_2025-08-15_16.jpg	\images\news_2025-08-15_16.jpg	https://www.emea.lambda.tdk.com/uk/news/article/20945	lambda.tdk.com
DC Meters for High-Power and Megawatt Charging	Isabellenhütte introduces the IEM-DCR, the second ...	12451	Product Release	DC Meters for High-Power and Megawatt Charging	Isabellenhütte introduces the IEM-DCR, the second generation of DC meters that meet the requirements of accurate energy measurement for charging infrastructure and legally compliant billing. Isabellenhütte currently offers several versions of the DC meter. The IEM-DCR-125, with a current measurement range of 125 A and voltage of 1,000 V, is suitable for DC wall boxes. The IEM-DCR-1000, with up to 1,000 A and an extended voltage range of 1,500 V, is designed for high-power charging up to 1.5 MW. It is claimed to be "the first meter on the market to cover the 1,500 V voltage class". The IEM-DCR-1500, with 1,500 A and also a voltage range up to 1,500 V, is suited for megawatt charging applications and is currently undergoing certification. The IEM-DCR meters consist of separate display and sensor units for direct integration into charging stations. A further development compared to the first generation of meters is a CAN interface for the transmission of real-time measurement data (current, voltage, temperature and power). In addition, this generation allows bi-directional measurements and the creation of charging transactions in OCMF format. The energy meters also offer two options for compensating for cable losses. The IEM-DCR-125 and IEM-DCR-1000 have been certified and meet Accuracy Class B (EN 50470) and Class 1 (IEC 62053-41). In addition to the certification under German calibration law, the meters are also certified under the EU Measuring Instruments Directive (MID).	01.07.2025 11:30:00	Jul	news_2025-07-15_13.jpg	\images\news_2025-07-15_13.jpg	https://www.isabellenhuette.com/news/dc-meters-for-high-power-and-megawatt-charging	isabellenhuette.com
Joint 200 mm GaN Production planned	Navitas Semiconductor announced a strategic partne...	12477	Industry News	Joint 200 mm GaN Production planned	Navitas Semiconductor announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC), to start production and continue development of 200 mm GaN-on-silicon technology. Navitas' GaN IC portfolio is expected to use Powerchip’s 200 mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has been operational since 2019 and supports various high-volume manufacturing processes for GaN, ranging from micro-LEDs to RF GaN devices. Powerchip’s capabilities include a 180 nm CMOS process which is claimed to offer “smaller and more advanced geometries, which bring improvements in performance, power efficiency, integration, and cost”. Powerchip is expected to manufacture Navitas’ GaN portfolio with voltage ratings from 100 V to 650 V, supporting the growing demand for GaN for 48 V infrastructure, including hyper-scale AI data centers and EVs. The partnership is expected to “strengthen supply chain, drive innovation, and improve cost efficiency - supporting GaN’s ramp into AI data centers, EVs, solar, and home appliances”. Qualification of initial devices is expected in Q4/2025. The 100 V family is expected to start production first at Powerchip within the first six months of 2026, while the company expects 650 V devices will transition from Navitas’ existing supplier, TSMC, to Powerchip over the next 12-24 months.	01.07.2025 10:00:00	Jul	news_2025-08-01_5.jpg	\images\news_2025-08-01_5.jpg	https://navitassemi.com/navitas-announces-plans-for-200mm-gan-production-with-psmc/	navitassemi.com
GaN FETs for High-Density Power Conversion	Renesas introduced three high-voltage 650 V GaN FE...	12446	Product Release	GaN FETs for High-Density Power Conversion	Renesas introduced three high-voltage 650 V GaN FETs for AI data centers and server power supply systems including the 800 V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures. The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices are based on low-loss d-mode technology and claimed to "offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings". Moreover, they are marketed to "minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4 V threshold voltage, which is not achievable with today's enhancement mode (e-mode) GaN devices". Built on a die that is 14 percent smaller than the previous Gen IV platform, the Gen IV Plus products achieve a lower R<sub>DS(on)</sub> of 30 mΩ, reducing on-resistance by 14 % and delivering a 20 % improvement in on-resistance output-capacitance-product figure of merit (FOM). These features make the Gen IV Plus devices suitable for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades.	01.07.2025 06:30:00	Jul	news_2025-07-15_8.jpg	\images\news_2025-07-15_8.jpg	https://www.renesas.com/en/about/newsroom/renesas-strengthens-power-leadership-new-gan-fets-high-density-power-conversion-ai-data-centers	renesas.com
Power Management IC Textbook	Wiley-IEEE Press has published "Design of Power Ma...	12441	Industry News	Power Management IC Textbook	Wiley-IEEE Press has published "Design of Power Management Integrated Circuits" by Bernhard Wicht. Spanning 457 pages, this book delivers an in-depth exploration of both foundational principles and cutting-edge innovations in power management integrated circuits (PMICs). It covers key functions such as power stages, gate Drivers, Semiconductor Devices, and Integrated Passives, and extends to LDOs, Charge Pumps, and various DC-DC Converters. A key feature of the text is its extensive collection of real-world examples, case studies, and exercises aimed at enhancing the understanding of complex design concepts and providing extensive guidance for electronics engineers. Bernhard Wicht, a Full Professor at Leibniz University Hannover, Germany, brings extensive experience from both the semiconductor industry and academia as well as contributions as part of the ISSCC Technical Program Committee and as an IEEE Distinguished Lecturer. As a guide, this publication is intended for designers, engineers, and students eager to deepen their PMIC expertise and drive advancements in high-performance computing, IoT, mobility, and renewable energy sectors.	27.06.2025 08:00:00	Jun	news_2025-07-15_3.jpg	\images\news_2025-07-15_3.jpg	https://www.wiley.com/en-gb/Design+of+Power+Management+Integrated+Circuits-p-9781119123064	wiley.com
"MLCCs with the Industry's highest Capacitance at 100 V for Commercial Applications in the 1608 Case Size"	TDK Corporation has expanded its C series for comm...	12438	Product Release	"MLCCs with the Industry's highest Capacitance at 100 V for Commercial Applications in the 1608 Case Size"	TDK Corporation has expanded its C series for commercial multilayer ceramic capacitors (MLCCs) to 1 µF at 100 V in the 1608 size (1.6 mm x 0.8 mm x 0.8 mm – L x W x H), with X7R characteristics. This is claimed to be "the industry's highest capacitance for a 100-V-rated product in this size and this temperature characteristic". "This 100-V product of the C series achieves ten times the capacity of conventional products of the same size". Main applications are input capacitors for power supply ICs used in commercial and industrial 48-V systems, etc.	26.06.2025 16:30:00	Jun	news_2025-07-01_18.jpg	\images\news_2025-07-01_18.jpg	https://www.tdk.com/en/news_center/press/20250626_01.html	tdk.com
Off-the-Shelf Radiation-Hardened 15 W DC/DC Power Converter for Space Applications	Microchip Technology announced the SA15-28 off-the...	12437	Product Release	Off-the-Shelf Radiation-Hardened 15 W DC/DC Power Converter for Space Applications	Microchip Technology announced the SA15-28 off-the-shelf radiation-hardened DC/DC 15 W power converter with a companion SF100-28 EMI filter that are designed to meet MIL-STD-461 specifications. This space-grade power device is a standard, non-hybrid DC/DC isolated power converter with a companion electromagnetic interference (EMI) filter that operates from a 28 V satellite bus in harsh environments. The SA15-28 is available with 5 V triple outputs that are usable with point-of-load converters and LDO linear regulators to power FPGAs and MPUs. The SA15-28 weighs 60 g and operates in the temperature range from -55 °C to +125 °C while offering a radiation tolerance up to 100 krad TID. The SF100-28 EMI noise suppression filter can be used with numerous power converters with a total output power of up to 100 W. For added flexibility in space applications, the SA15-28 and SF100-28 are fully compatible with Microchip's existing SA50 series of power converters and SF200 filter.	26.06.2025 15:30:00	Jun	news_2025-07-01_17.jpg	\images\news_2025-07-01_17.jpg	https://www.microchip.com/en-us/about/news-releases/products/new-off-the-shelf-radiation-hardened-15w-dc-dc-power-converter	microchip.com
Power Supply Unit for Flux Gate Technology Current Transducers	Danisense has introduced the DSSIU-1-V, a low-nois...	12455	Product Release	Power Supply Unit for Flux Gate Technology Current Transducers	Danisense has introduced the DSSIU-1-V, a low-noise power supply and interface unit designed to support a range of its flux gate current transducers (DCCTs). Featuring an industry-standard D-sub-9 connector, the DSSIU-1-V unit measures 130 mm x 116 mm x 56 mm and is equipped with an integrated Voltage Output Module (VOM), which precisely converts the measured current into a voltage output via a BNC connector. The DSSIU-1-V supports both 1 V and 10 V output options with its +/-15 V/1.2 A DC supply output generated from a universal mains input between 110 and 220 V<sub>AC</sub>. Main target applications include flux gate DCCTs, hall effect DCCTs, electric vehicle test benches, power measurement and power analysis, current calibration purposes as well as precision current sensing.	26.06.2025 15:30:00	Jun	news_2025-07-15_17.jpg	\images\news_2025-07-15_17.jpg	https://danisense.com/news/new-compact-1-channel-system-interface-unit/	danisense.com
"World's First 10 µF / 50 V_DC MLCC in 0805-inch Size for Automotive Applications"	Murata has announced the GCM21BE71H106KE02 multila...	12434	Product Release	"World's First 10 µF / 50 V<sub>DC</sub> MLCC in 0805-inch Size for Automotive Applications"	Murata has announced the GCM21BE71H106KE02 multilayer ceramic capacitor (MLCC) has entered mass production. The device is “the world's first 0805-inch size (2.0mm x 1.25 mm) MLCC to offer a capacitance of 10 µF with a 50 VDC rating and is specifically engineered for automotive applications”. Designed for 12 V automotive power lines, the GCM21BE71H106KE02 capacitor leverages Murata’s proprietary ceramic material and thinning technologies to help engineers to save PCB space and reduce the overall capacitor count. It offers roughly 2.1 times the capacitance of Murata’s previous 4.7 µF / 50 V<sub>DC</sub> product, despite sharing the same physical size. Furthermore, compared to the previous 10 µF / 50 V<sub>DC</sub> MLCC in the larger 1206-inch size (3.2 mm x 1.6 mm), the MLCC occupies approximately 53 % less space, providing substantial space savings for automotive applications.	26.06.2025 12:30:00	Jun	news_2025-07-01_14.png	\images\news_2025-07-01_14.png	https://www.murata.com/en-eu/news/capacitor/ceramiccapacitor/2025/0612	murata.com
Digital Controller for GaN Totem Pole PFC	Wise Integration release to production its first f...	12447	Product Release	Digital Controller for GaN Totem Pole PFC	Wise Integration release to production its first fully digital controller, WiseWare® 1.1 (WIW1101) based on the MCU 32 bits. This device enables high-frequency operation up to 2 MHz, unlocking new levels of power density, efficiency, and form factor in compact AC/DC power converters. Unlike legacy analog solutions, WiseWare 1.1 leverages the speed and switching capabilities of GaN through a proprietary digital control algorithm in a MCU 32 bits, that enables zero voltage switching (ZVS) across all power transistors. Designed specifically for totem pole power-factor correction (PFC) architectures in critical-conduction mode (CrCM), this controller allows engineers to reduce the size, weight, and thickness of magnetic components while maintaining >98 percent efficiency. It supports a power range from 100 W to 1.5 kW, making it suitable for a several applications requiring both compactness and high energy efficiency. Designed with flexibility in mind, WiseWare 1.1 works seamlessly with standard GaN across the full R<sub>DS(on)</sub> spectrum. The minimum standby power consumption is 18 mW.	26.06.2025 07:30:00	Jun	news_2025-07-15_9.jpg	\images\news_2025-07-15_9.jpg	https://wise-integration.com/wise-integration-launches-first-digital-controller-wiseware-1-1-for-gan-totem-pole-pfc-with-high-switching-frequency-up-to-2-mhz/	wise-integration.com
Isolated Gate Driver IC Optimized for High-Voltage GaN Devices	ROHM has developed an isolated gate driver IC – th...	12435	Product Release	Isolated Gate Driver IC Optimized for High-Voltage GaN Devices	ROHM has developed an isolated gate driver IC – the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. The BM6GD11BFJ-LB utilizes proprietary on-chip isolation technology to reduce parasitic capacitance, enabling operation up to 2 MHz. This maximizes the high-frequency switching capabilities of GaN devices. This contributes not only to greater energy efficiency and performance in applications but also reduces mounting area by minimizing the size of peripheral components. At the same time, CMTI (Common-Mode Transient Immunity – an indicator of noise tolerance in noise isolated gate driver ICs) has been increased to 150 V/ns – 1.5 times higher than conventional products – preventing malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65 ns, which is 33% less than conventional products. With a gate drive voltage range of 4.5 V to 6.0 V and an isolation voltage of 2500 V<sub>rms</sub>, the BM6GD11BFJ-LB is designed to fully support a wide range of high-voltage GaN devices, including ROHM's 650 V EcoGaN™ HEMT. The output-side current consumption is 0.5 mA (max). Typical application are industrial equipment like Power supplies for PV inverters, ESS (Energy Storage Systems), communication base stations, servers, and industrial motors as well as consumer devices like white goods, AC adapters (USB chargers), PCs, TVs, refrigerator and air conditioners.	25.06.2025 13:30:00	Jun	news_2025-07-01_15.jpg	\images\news_2025-07-01_15.jpg	https://www.rohm.com/products/power-management/gate-drivers/gan-gate-drivers/bm6gd11bfj-lb-product	rohm.com
Electroactive Polymers for Heating and Cooling	Research scientists at Fraunhofer IAP have develop...	12479	Industry News	Electroactive Polymers for Heating and Cooling	Research scientists at Fraunhofer IAP have developed electrocaloric polymer films with a very low thickness of only four micrometers and processed them into multilayer components. In the future, they will be used in various systems for heating and cooling. For example, in heat pumps for temperature control in vehicle interiors, battery modules, electronic components, control cabinets, or laser systems. Applications include electromechanical sensors and actuators for applications in soft robotics and automation, sound and vibration detectors, ultrasonic transducers, pyroelectric layers for infrared sensors, and electrocaloric materials for heating and cooling. Electrocaloric polymers react to changes in electrical voltage with changes in temperature: the sudden application of an electric field leads to a specific, sudden rise in temperature, which increases the greater the change in the electric field. This is due to polar structures in the material, which are forced into an orderly alignment by the electric field and release energy in the process. Conversely, they absorb energy again as soon as the electric field is switched off. The material cools down abruptly to the same extent. For the technical use of electrocaloric materials in heating and cooling systems, these processes must be repeated at high frequencies and controlled in such a way that heating and cooling take place in different environments. Only then can a heat pump with usable, permanently warm and cold areas be created. Several properties of the material are crucial for high electrocaloric performance, including a large change in electrical polarization, high dielectric strength, low thermal losses, and good mechanical stability.	25.06.2025 12:00:00	Jun	news_2025-08-01_7.jpg	\images\news_2025-08-01_7.jpg	https://www.iap.fraunhofer.de/en/press_releases/2025/electroactive-polymers-heating-cooling.html	iap.fraunhofer.de
Power Inductors in a Performance Version	The WE-XHMI Performance series extends Würth Elekt...	12433	Product Release	Power Inductors in a Performance Version	The WE-XHMI Performance series extends Würth Elektronik's family of power inductors with improved versions in sizes 1010, 1060, 6030, and 6060. The magnetically shielded flat-wire inductors support high saturation currents while reducing DC. The WE-XHMI Performance SMT inductors show the ability to withstand saturation currents of up to 114 A while also handling high transient current peaks. This makes them particularly suitable for use in DC/DC converters, point-of-load converters and high-current filters, as well as in industrial computers, mainboards and graphics cards. These latest improvements now enable Würth Elektronik to meet the growing demand for low-loss solutions at high switching frequencies and maximum power density, driven by GaN and SiC transistor technologies. The new generation of molded WE-XHMI flat-wire inductors is claimed to "outperform other products of the same size by offering the lowest R<sub>DC</sub> combined with low AC losses". Compared to the standard products in the series, the "Performance" models feature an extended inductance range, a higher operating temperature (-55 °C to +150 °C), up to 30 percent lower resistance, and up to 50 percent higher rated currents. Thanks to their significantly reduced DC losses compared to inductors of the same size, they enable more efficient operation with lower self-heating. Low DC losses at higher rated currents help raise the efficiency of switching regulators.	25.06.2025 11:30:00	Jun	news_2025-07-01_13.jpg	\images\news_2025-07-01_13.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=XHMI-Performance	we-online.com
Power Inductors in a Performance Version	The WE-XHMI Performance series extends Würth Elekt...	12450	Product Release	Power Inductors in a Performance Version	The WE-XHMI Performance series extends Würth Elektronik's family of power inductors with improved versions in sizes 1010, 1060, 6030, and 6060. The magnetically shielded flat-wire inductors support saturation currents of up to 114 A while reducing DC losses for even more efficient operation. They are suitable e. g. for use in DC/DC converters, point-of-load converters and high-current filters, as well as in industrial computers, mainboards and graphics cards. Compared to the standard products in the series, the "Performance" models feature an extended inductance range, a higher operating temperature (-55 °C to +150 °C), up to 30 percent lower resistance, and up to 50 percent higher rated currents at reduced DC losses compared to inductors of the same size.	25.06.2025 10:30:00	Jun	news_2025-07-15_12.jpg	\images\news_2025-07-15_12.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=XHMI-Performance	we-online.com
180 W GaN Buck Converter Evaluation Board for USB PD Applications	Efficient Power Conversion Corporation (EPC) intro...	12448	Product Release	180 W GaN Buck Converter Evaluation Board for USB PD Applications	Efficient Power Conversion Corporation (EPC) introduced the EPC91109, a high-performance evaluation board designed to demonstrate the benefits of eGaN® FETs in a compact, thermally efficient, two-phase synchronous buck converter. Targeting USB Power Delivery (USB-PD 3.1) applications up to 180 W, the EPC91109 is optimized for space- and power-constrained designs such as laptops, portable devices, and battery-powered systems. The EPC91109 combines four 50 V-rated EPC2057 GaN FETs with the Analog Devices LTC7890, a dual-phase buck controller, to deliver output voltages of 12 V, 16 V, or 20 V from an input range of 20 V to 36 V. In two-phase interleaved mode, it supports output currents up to 14.3 A - matching the full 180 W USB-PD power envelope at 12 V output from a 36 V source. The EPC91109 Evaluation Board: is configurable to operate in either two-phase or single phase, dual-output mode, operates with a low-profile inductor of 3 mm height and has a power stage measuring 24 mm x 24 mm. Offering configurable light-load modes and dead-time settings it does not require any heatsink or forced air cooling as the peak efficiency is beyond 98 % under standard operating conditions.	24.06.2025 08:30:00	Jun	news_2025-07-15_10.jpg	\images\news_2025-07-15_10.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3221/ultra-compact-high-efficiency-180-w-gan-buck-converter-evaluation-board-for-usb-pd-applications	epc-co.com
Collaboration to advance next-generation GaN Device	Silvaco Group announced a strategic R&D collaborat...	12440	Industry News	Collaboration to advance next-generation GaN Device	Silvaco Group announced a strategic R&D collaboration with Fraunhofer Institute for Silicon Technology (ISIT). The partnership aims to accelerate development of next-generation Gallium Nitride devices using Silvaco's Power Devices Solution to perform Design Technology Co-Optimization (DTCO). This collaboration aligns with Fraunhofer ISIT's role in the EU Chips Act initiative through its participation in the APECS pilot line. Silvaco is a provider of TCAD, EDA software, and SIP solutions that enable semiconductor design and digital twin modeling through AI software and automation. Fraunhofer ISIT's Power Electronics division is at the forefront of developing and manufacturing cutting-edge device prototypes for high-performance power electronic and sensor systems. Fraunhofer ISIT will leverage Silvaco's design tools - including the Victory TCAD™ platform, Utmost IV™, and SmartSpice™ - to perform Design Technology Co-Optimization (DTCO) for power and sensor device development. Silvaco DTCO platform will enable accelerated prototyping in Fraunhofer ISIT's post-CMOS process environment, which is set up to explore emerging processes for both GaN and MEMS technologies on 8-inch wafers. In addition, Silvaco's Victory Design of Experiments (DOE) solution will streamline development workflows and support rapid innovation during the evaluation of novel process modules and emerging device concepts. In addition to the active utilization of Silvaco's tools in R&D and industry customer projects, Fraunhofer ISIT will train students at local universities in the utilization of Silvaco's Victory TCAD platform to prepare the next generation of semiconductor device engineers.	24.06.2025 07:00:00	Jun	news_2025-07-15_2.jpg	\images\news_2025-07-15_2.jpg	https://investors.silvaco.com/news-releases/news-release-details/silvaco-and-fraunhofer-isit-collaborate-advance-next-generation	silvaco.com
Collaboration on Next-Generation Integrated Power Delivery Solution for AI and Cloud Platforms	Empower Semiconductor announced a collaboration wi...	12425	Industry News	Collaboration on Next-Generation Integrated Power Delivery Solution for AI and Cloud Platforms	Empower Semiconductor announced a collaboration with Marvell Technology to develop optimized integrated power solutions for Marvell® custom silicon platforms. These solutions are designed to accelerate the transformation of power delivery systems to smaller, faster, integrated power silicon chips tightly coupled with the processor. The joint solutions are part of Empower's broader mission to address the power delivery challenges of the kilowatt-chip era. By integrating power delivery with processors, Empower and Marvell enable hyperscalers and infrastructure providers to maximize their performance, efficiency, and return on investment (ROI) of artificial intelligence (AI) and cloud data centers. The collaboration leverages Empower's FinFast™ technology and vertical power delivery architecture to provide system designers with pre-validated, high-density power solutions that move voltage regulation from traditional board-level designs to silicon-integrated or near-chip solutions. By bringing power delivery closer to the processor, these solutions significantly reduce power transmission losses, improve efficiency, and support the increasing current demands of next-generation XPUs.	18.06.2025 09:00:00	Jun	news_2025-07-01_4.png	\images\news_2025-07-01_4.png	https://www.empowersemi.com/empower-and-marvell-announce-collaboration-on-next-generation-integrated-power-delivery-solution-for-ai-and-cloud-platforms/	empowersemi.com
The EU Energy Label for Mobile Devices	A new energy label for mobile devices is mandatory...	12427	Industry News	The EU Energy Label for Mobile Devices	A new energy label for mobile devices is mandatory in the EU starting June 20, 2025. This applies to all smartphones and tablets with Android or iPadOS operating systems, ushering in a new era of European product policy. For the first time, an EU-wide standardized label, which Fraunhofer IZM played a key role in developing, evaluates not only the energy efficiency of devices, but also their reliability, durability, and repairability. The European regulation's goal is to greatly increase the longevity of mobile devices. According to a survey conducted by the Fraunhofer Institute for Reliability and Microintegration IZM in 2022, factors other than energy consumption are also influencing users' decisions. The survey indicated that device longevity is a crucial consideration for users. The label is closely tied to the new ecodesign requirements. Batteries should be able to withstand at least 800 charging cycles while retaining 80% of their original capacity. Manufacturers must enter all products bearing the EU energy label in a European product database (EPREL). This database can be accessed via the QR code on the energy label. This allows for informed purchasing decisions that are based on sustainability criteria and align with the principles of a circular economy. The potential savings are considerable: The new requirements are expected to reduce the primary energy consumption required for producing, distributing, and using mobile devices by nearly 14 terawatt hours per year by 2030. This reduction is equivalent to approximately one-third of the previous energy consumption throughout the products' life cycle.	17.06.2025 11:00:00	Jun	news_2025-07-01_6.png	\images\news_2025-07-01_6.png	https://www.izm.fraunhofer.de/en/news_events/tech_news/the-eu-energy-label-for-mobile-devices.html	izm.fraunhofer.de
25 V MOSFET in DFN3.3x3.3 meets Power Demands in AI Servers	Alpha and Omega Semiconductor introduced its AONK4...	12430	Product Release	25 V MOSFET in DFN3.3x3.3 meets Power Demands in AI Servers	Alpha and Omega Semiconductor introduced its AONK40202 25V MOSFET in DFN3.3x3.3 Source-Down packaging technology. Designed for high power density in DC/DC applications, the device provides features that meet the requirements of AI servers and data center power distribution. In particular, its Source-Down packaging technology offers a larger source contact to the PCB, and its center gate pin layout allows easier routing on the PCB, so the gate driver connection can be minimized. The AONK40202 MOSFET's DFN3.3x3.3 Source-Down packaging technology with clip enables continuous current capabilities up to 319 A with a maximum junction temperature rated at 175 °C. This provides significant potential for system-level improvements, such as better thermal management, enabling higher power density and greater efficiency.	17.06.2025 08:30:00	Jun	news_2025-07-01_10.jpg	\images\news_2025-07-01_10.jpg	https://www.aosmd.com/news/alpha-and-omega-semiconductor-introduces-25v-mosfet-dfn33x33-source-down-packaging-meets-power	aosmd.com
1600 V IGBTs for energy-conscious Appliance Markets	STMicroelectronics' STGWA30IH160DF2 IGBT combines ...	12449	Product Release	1600 V IGBTs for energy-conscious Appliance Markets	STMicroelectronics' STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and a maximum junction temperature of 175°C with a current rating of 30 A in high-power applications, including induction heaters and cookers, microwave ovens, and rice cookers. Extending the STPOWER portfolio, this is the first 1600 V IGBT in ST's IH2-generation operating with a saturation voltage V<sub>CEsat</sub> of 1.77 V (typical, at rated current). The device, which is available in a TO-247 long lead package, can be used in single-switch quasi-resonant converters over a switching frequency range, from 16 kHz to 60 kHz. Featuring a positive V<sub>CE(sat)</sub> temperature coefficient with tight parameter distribution, the STGWA30IH160DF2 allows connecting multiple devices in parallel for current sharing in high-power applications.	16.06.2025 09:30:00	Jun	news_2025-07-15_11.jpg	\images\news_2025-07-15_11.jpg	https://community.st.com/t5/developer-news/advanced-1600v-igbts-for-cost-sensitive-energy-conscious/ba-p/812211	st.com
Launch of Energy Storage Resource Hub	Arrow Electronics has launched a dedicated online ...	12423	Industry News	Launch of Energy Storage Resource Hub	Arrow Electronics has launched a dedicated online hub offering extensive resources for those seeking to understand the future of energy storage systems. As the global shift towards renewable energy accelerates, battery energy storage systems (BESS) are becoming critical in revolutionising energy storage and management. BESS technology plays a vital role in integrating solar and wind power, enabling the electrification of vehicles, and providing reliable backup power, ultimately enhancing sustainability and resilience across various sectors. The energy storage systems resource page provides access to a range of valuable content, including a webinar on 'Optimising Energy Storage: The Role of Advanced BMS,' an e-book on BESS, essential design resources, insightful articles exploring key energy storage topics, such as photovoltaic integration and recordings of on-demand webinars, including 'High-Power SiC MOSFETs Designed to Last.' Arrow, in collaboration with eInfochips, is driving innovation in the BESS sector by offering leading-edge components, expert engineering support, and dependable supply chain solutions.	16.06.2025 07:00:00	Jun	news_2025-07-01_2.jpg	\images\news_2025-07-01_2.jpg	https://www.arrow.com/en/campaigns/energy-storage-systems-solutions	arrow.com
CWIEME Berlin Closes with Record Energy, Innovation and Collaboration	The event for coil winding, insulation and electri...	12445	Event News	CWIEME Berlin Closes with Record Energy, Innovation and Collaboration	The event for coil winding, insulation and electrical manufacturing brought together industry leaders, engineers, academics and future talent to shape the future of electrical manufacturing. Welcoming a visitor footfall of 12,500+, including representatives from Hitachi, Hyundai, LG Electronics, Logitech, NIDEC, Nike, Bosch, Rolls-Royce, Schaeffler, Schneider Electric, Siemens, Tesla, Toshiba, Toyota and more. The show's conference program featured more than 90 expert speakers, covering key themes such as automation, sustainability, digitalisation and supply chain transformation. From e-mobility breakthroughs to leadership insights, the event proved once again why CWIEME Berlin is the cornerstone of the global electrical engineering calendar. Visitors explored the buzzing Innovation Zone, which hosted well-attended Power Hour presentations from its exhibitors throughout the show, and expanded Academic Excellence Hub, and the launch of the Electric Avenue helped guide guests through five exhibition halls filled with the world's most forward-thinking companies.	12.06.2025 12:00:00	Jun	news_2025-07-15_7.jpg	\images\news_2025-07-15_7.jpg	https://berlin.cwiemeevents.com/articles/cwieme-berlin-closes-with-record-energy	berlin.cwiemeevents.com
eBook on High-Density Power Modules for 48 V	Vicor explains in their latest eBook how its power...	12436	Product Release	eBook on High-Density Power Modules for 48 V	Vicor explains in their latest eBook how its power solutions support customers that are constantly pushing the limits of what is possible. This exclusive read entitled ‘Changing what’s Possible’ delves into how power dense Vicor modules enable many world-changing innovations across various sectors, including electric vehicles, renewable energy and advanced computing, all of which are adopting 48 V architecture. The guide from Vicor outlines the essential role of high-density power modules in optimising performance in applications which test the limits of power electronics. Through a range of case studies that highlight daunting power challenges, the eBook explains how thermally-adept Vicor power modules in tandem with Vicor propriety technology and 48 V architectures are capable of exceeding what’s possible. The eBook provides fresh insight and knowledge on different power architectures through practical examples, encouraging the adoption of best practices in power system design in order to push the boundaries of what is possible. The eBook includes in-depth analysis as it explores the latest developments in high-density power electronics and their implications for various industries. Furthermore, it also shows the actual products used in the power delivery network to better understand how to design an individual PDN. This is complemented by practical applications because the eBook teaches about real-world applications and how cutting-edge power solutions are transforming industries.	11.06.2025 14:30:00	Jun	news_2025-07-01_16.jpg	\images\news_2025-07-01_16.jpg	https://www.vicorpower.com/resource-library/ebook/changing-whats-possible-pi-ebook	vicorpower.com
On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers	Wide bandgap semiconductors such as SiC, GaN, and ...	12412	Industry News	On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers	Wide bandgap semiconductors such as SiC, GaN, and diamond are critical materials for next-generation power electronics, optoelectronics, and quantum technologies. However, their performance is highly sensitive to internal stress, strain, and defects introduced during growth and processing. In this webinar, you can explore how Raman, Photoluminescence (PL), Time-Resolved Photoluminescence and Cathodoluminescence can be powerful, non-destructive tools for characterizing these properties with high spatial and spectral resolution. It is discussed how Raman spectroscopy can reveal information about crystal quality, phonon shifts due to strain, and temperature effects, while PL provides insight into electronic and optical properties, impurity levels, and defect states. Real-world case studies and application examples highlight how these techniques can be used to optimize material growth, improve device yield, and accelerate R&D.	11.06.2025 12:00:00	Jun	news_2025-06-15_7.png	\images\news_2025-06-15_7.png	https://angelbc.zoom.us/webinar/register/WN_d7KosM0sRgWBvrv1RQYXIg#/registration	horiba.com
Tab Terminal, High Voltage DC Switching Relay	FCL Components has released the FTR-E1J 20A, a tab...	12432	Product Release	Tab Terminal, High Voltage DC Switching Relay	FCL Components has released the FTR-E1J 20A, a tab terminal-type high voltage DC switching relay, based on its FTR-E1 series. It is screw mounted and does not use printed circuit boards. This relay delivers 20 A / 800 V<sub>DC</sub>, 10 A / 1,000 V<sub>DC</sub> higher voltage switching with no specific polarity requirements for the connection of load terminals, and low power consumption (0.9 W at coil rated voltage). It features non-polarized contacts, making it suitable for charge and discharge circuits using FCL Components' arc suppression technology to protect its contacts. The FTR-E1J 20A is well-suited for both fuel and electric vehicle, solar, machinery, and battery applications, including electric vehicle pre-charge (HEV, PHEV, FCV, EV), PTC heaters, quick charge stations, photovoltaic power generation systems, hybrid construction machinery, battery systems, and V2H systems. This high insulation design (between coil and contacts: 5,000 V<sub>DC</sub>, between open contacts: 2,500 V<sub>DC</sub>), plastic sealed relay is RoHS compliant and uses no hydrogen gas. It measures 28.3 x 43.6 x 36.1 mm³ (excluding protrusion) and weighs approximately 85 g.	10.06.2025 10:30:00	Jun	news_2025-07-01_12.jpg	\images\news_2025-07-01_12.jpg	https://www.fcl-components.com/en/resources/news/press-releases/2025/20250610eu.html	fcl-components.com