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Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

1,200 V Automotive-Grade Low-Loss Diodes

Learn more:
taiwansemi.com

Product Release
2025-11-12

Taiwan Semiconductors introduced a series of automotive-grade, low-loss diodes offered in industry-standard packages. The 1,200 V PLA/PLD series, with ratings of 15 A, 30 A or 60 A, all feature maximum forward voltages of 1.3 V, a reverse leakage of less than 10 µA at 25 °C and junction temperatures of up to 175 °C. Available in three popular packages (ThinDPAK, D2PAK-D and TO-247BD), the 1,200V diodes enable easy drop-in replacement to improve efficiency in existing designs. Applications include three-phase AC/DC converters, server and computing power systems, EV charging stations, on-board battery chargers, Vienna rectifiers, totem pole and bridgeless topologies, inverters and UPS systems, and general-purpose rectification in high-power systems of various types.

GaN Technology Licensed to Accelerate U.S.-Manufactured Power Portfolio

Learn more:
gf.com

Industry News
2025-11-10

GlobalFoundries (GF) announced that it has entered into a technology licensing agreement with TSMC for 650V and 80V Gallium Nitride (GaN) technology. This strategic move will accelerate GF’s next generation of GaN products for datacenter, industrial and automotive power applications and provide U.S.-based GaN capacity for a global customer base. As traditional silicon CMOS technologies hit their performance limits, GaN is emerging as the next-generation solution for meeting the increasing demand for higher efficiency, power density and compactness in power systems. GF is developing a comprehensive GaN portfolio, including high-performance 650V and 80V technologies aimed at enabling electric vehicles, datacenters, renewable energy systems and fast-charging electronics. GF’s GaN solutions are designed for harsh environments, with a holistic approach to GaN reliability that spans process development, device performance and application integration. GF will qualify the licensed GaN technology at its manufacturing facility in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology to accelerate volume production for customers seeking next-generation power devices. Development is set for early 2026, with production to begin later in the year.

EPCIA President appointed

Learn more:
murata.com

People
2025-11-07

According to Murata Manufacturing, Christophe Pottier, Vice President of Sales for Murata Europe, has been appointed as President of the European Passive Components Industry Association (EPCIA), effective immediately. Mr. Pottier brings over three decades of deep experience within the electronics industry to his new role, with a strong focus on strategic sales and automotive sector initiatives. His experience at Murata, where he has contributed across multiple domains, including strategic sales in telecom and collaborative initiatives in the automotive industry, has shaped his understanding of how these components quietly power advanced technologies. As EPCIA President, Mr. Pottier’s mission is to promote a stronger, more connected passive components ecosystem across Europe by focusing on three key areas. The first area is elevating the role of passive components as these elements regulate, protect, and optimize electronic signals, making them indispensable to chip performance and system reliability. The second focal point is fostering collaboration which means working with adjacent industries to meet demands for miniaturization, high-speed data, and energy efficiency as integration into semiconductor packaging accelerates. Strengthening ties with research institutes is the third key area: Driving innovation in materials science, sustainability, and advanced manufacturing through partnerships with Europe’s academic and research institutions.

Job Promotion in Solutions for Power Electronics

Learn more:
indium.com

People
2025-11-06

Indium Corporation has promoted Joseph Hertline to Senior Product Manager, Engineered Solder Materials (ESM). In his new role, as Senior Product Manager, Hertline is now responsible for driving the growth of Indium Corporation’s global ESM initiatives through the development of marketing strategies. He will continue to lead the company’s efforts in the power electronics application segment with a broader scope of products, applications, and customer segments. He will also continue to lead ESM Application Engineering efforts for all ESM product lines. Hertline has more than a decade of experience in engineering and product management within the electronics industry and joined Indium Corporation in 2020 as Product Manager, Power Electronics.

MicroModule Series expanded

Learn more:
we-online.com

Product Release
2025-11-06

The MagI³C-VDMM power module product family from Würth Elektronik continues to grow: The three variable step-down MicroModules for input voltages from 2.5 V to 5.5 V and adjustable output voltages from 0.6 V to 4 V are available in pin-compatible 1 A, 2 A, and 3 A versions. The modules achieve a peak efficiency of up to 96 %. With a quiescent current of 4 µA,they are also suitable for battery-powered applications. MagI³C-VDMM power modules represent a fully integrated DC/DC power supply that includes a switching regulator with integrated MOSFETs, as well as a controller, compensation, and a shielded inductor – all in a single package. The modules, which can replace linear regulators, are equipped with integrated protection circuits. They protect against thermal overload and electrical damage caused by overcurrent, short circuit and undervoltage. Depending on the load, they automatically switch between pulse frequency modulation (PFM) and pulse width modulation (PWM) modes. These mode transitions allows optimal efficiency and output voltage ripple at all load currents. To save energy, the power module can be set to resting mode using an additional pin. Together, the Power-GOOD and EN functions also enable power sequencing. These MagI³C-VDMM power modules measure 3.5 x 3.5 x 1.5 mm³ in an LGA-9 package. The devices are suitable for point-of-load DC/DC applications, industrial and medical equipment, test and measurement devices, for powering DSPs, FPGAs, MCUs and MPUs as well as I/O interfaces. In the operating temperature range from -40 °C to 105 °C the modules comply with EN55032 (CISPR-32) Class B for radiated emissions.

Reference Design combines Power, Sensing, and Control for Robot Joints and UAVs – fitting in A1 Robot Motor

Learn more:
epc-co.com

Product Release
2025-11-05

Efficient Power Conversion Corporation (EPC) launched the EPC91120, a 3-phase brushless DC (BLDC) motor drive inverter optimized for humanoid robot joints. "Featuring EPC’s EPC23102 ePower™ Stage IC, the EPC91120 delivers superior efficiency, high power density, and precise motion control in a compact 32 mm-diameter footprint designed to integrate directly within robotic motor assemblies", the company reports. The EPC91120 evaluation board integrates three EPC23102 GaN monolithic half-bridge ICs with an on-board microcontroller, current and voltage sensing, magnetic encoder interface, and RS485 communication. The system operates from 15 V to 55 V_DC, delivering up to 21 A peak (15 A_RMS) continuous current and 42 A peak (30 A_RMS) pulsed. With a 100 kHz PWM switching frequency and only 50 ns dead time, the EPC91120 achieves exceptional efficiency and dynamic performance, ideal for humanoid robot joint motors and other high-precision motion applications. The board was specifically designed to fit the mechanical dimensions of the Unitree A1 robot motor, enabling direct evaluation in real-world robotic systems. Under natural convection cooling at 26 °C ambient, the EPC91120 delivers 7 ARMS per phase without a heatsink and up to 15 A_RMS when integrated into the humanoid joint motor casing as a heatsink. Experimental results demonstrate total system efficiencies exceeding 80 % from DC input to mechanical output, validating the design for high-torque, low-weight robotic joints.

Win a Power Analyzer Set for your Research Lab

Learn more:
hioki.eu/win

Industry News
2025-10-31

Just in time for Christmas, HIOKI EUROPE GmbH is giving away a complete Power Analyzer Set with a retail value of around EUR 35,000 consisting of ex-demo devices. This special giveaway campaign is open exclusively to universities and research institutions across the European Union specialising in power electronics or energy efficiency. Are these your areas of expertise? Join the competition at shop.hioki.eu/win-PW6001-Power-Analyzer by briefly describing how you would use power analysis in your application – the most convincing idea wins! Among all participants, the HIOKI jury will award a Power Analyzer Set*. With a bit of luck, you could find this special present under your institution’s Christmas tree this year. Deadline for entries: 19 December 2025.

Vertical GaN Semiconductors

Learn more:
onsemi.com

Product Release
2025-10-30

As global energy demand surges from AI data centers, electric vehicles, and other energy intensive applications, onsemi has introduced vertical gallium nitride (vGaN) power semiconductors, setting a new benchmark for power density, efficiency and ruggedness for these applications. These next-generation GaN-on-GaN power semiconductors conduct current vertically through the compound semiconductor, enabling higher operating voltages and faster switching frequencies, leading to energy savings to deliver smaller and lighter systems across AI data centers, electric vehicles (EVs), renewable energy, and aerospace, defence and security. onsemi’s vGaN technology is designed to handle high voltages in a monolithic die – 1,200 volts and beyond – switching high currents at high frequency with superior efficiency. High end power systems built with this technology can reduce losses by almost 50% and by operating at higher frequencies can also reduce the size, including passives like capacitors and inductors by a similar amount. Additionally, compared to commercially available lateral GaN, vGaN devices are approximately three times smaller. This makes onsemi’s vGaN ideal for critical high-power applications where power density, thermal performance and reliability are paramount.

N-Channel Power MOSFETs

Learn more:
toshiba.semicon-storage.com

Product Release
2025-10-30

Toshiba Electronics Europe launches six products featuring the DTMOSVI 600V series of N-channel power MOSFET chips, mounted in a 4-pin TO-247-4L(X) package. These TKxxxZ60Z1 devices are designed to significantly reduce switching loss. They are suitable for a range of applications, including servers in data centres, SMPS for industrial equipment, and power conditioners for photovoltaic generators. The DTMOSVI 600V series, featured in these products, has been engineered with an optimised gate design and process. This optimisation has resulted in a reduction of the drain-source on-resistance per unit area by approximately 13 %. Furthermore, the crucial figure of merit (FOM) for MOSFET performance, R_DS(ON) × gate-drain charge (Q_gd), has been reduced by approximately 52 % compared to Toshiba’s previous generation DTMOSIV-H series products with the same 600 V drain-source voltage (V_DS) ratings. For example, the TK024Z60Z1 has a typical R_DS(ON) of 20 mΩ and Q_gd of 37 nC. This translates into a better trade-off between conduction loss and switching loss, directly contributing to the efficiency of switched-mode power supplies. These products incorporate a four-pin TO-247-4L(X) package, which includes a dedicated signal source terminal for the gate drive. However, it is important to note that the TO-247-4L(X) package has a different appearance and dimensions compared to Toshiba’s existing four-pin TO-247-4L package, as it features the cavity between the drain and source pins to increase creepage distance.

APEC 2026 Early Bird Registration Now Open

Learn more:
apec-conf.org

Event News
2025-10-30

The registration for APEC 2026, which will take in San Antonio, Texas (USA) on March 22-26, 2026, is now open. The IEEE Applied Power Electronics Conference and Exposition (APEC) offers a wide range of educational and social activities. APEC attendees can choose the registration category that best fits their needs and interests. Early bird registration will close on January 26, 2026.

650 V Super Junction TOLL Package Products with Integrated Kelvin Source

Learn more:
magnachip.com

Product Release
2025-10-30

Magnachip Semiconductor released two 650 V Super Junction MOSFET (SJ MOSFET) products, adopting the TO-Leadless (TOLL) package, that are designed to meet the high-power and high-current requirements of premium consumer electronics such as premium TVs, gaming monitors, AI laptop adaptors and chargers. Current Magnachip products with TOLL packaging, such as the 80 V – 200 V eXtreme Trench MOSFETs, use a 3-pin configuration. The 650 V SJ MOSFETs have a 4-pin Kelvin configuration, which minimizes the effects of parasitic inductance on the gate-source return path, thereby improving switching stability and overall power efficiency by reducing gate oscillation (ringing). Compared to a conventional D²PAK package, the 4-pin TOLL package delivers more than a 100 % increase in current capability, a 24 % reduction in footprint and a 48 % reduction in height. Therefore, the 4-pin TOLL package is suitable for smaller PCB and high-power density applications, which demand high power efficiency and effective heat dissipation performance. For example, the MMTB65R099RFRH device suited for a drain-source voltage of 650 V operates with a maximum R_DS(on) of 99 mΩ.

Vertical GaN Architecture built on GaN-on-GaN Technology

Learn more:
onsemi.com

Industry News
2025-10-30

onsemi has introduced vertical gallium nitride (vGaN) power semiconductors. These next-generation GaN-on-GaN devices conduct current vertically through the compound semiconductor, enabling higher operating voltages and faster switching frequencies, leading to energy savings to deliver smaller and lighter systems across AI data centers, electric vehicles (EVs), renewable energy, and aerospace, defence and security. Developed and manufactured at onsemi’s fab in Syracuse, NY, onsemi holds over 130 global patents covering a range of fundamental process, device design, manufacturing and systems innovations for vertical GaN technology. onsemi’s vGaN technology is designed to handle high voltages in a monolithic die – 1,200 volts and beyond – switching high currents at high frequency with superior efficiency. High end power systems built with this technology can reduce losses by almost 50% and by operating at higher frequencies can also reduce the size, including passives like capacitors and inductors by a similar amount. Additionally, compared to commercially available lateral GaN, vGaN devices are approximately three times smaller. This makes onsemi’s vGaN ideal for critical high-power applications where power density, thermal performance and reliability are paramount.

Company Acquisition

Learn more:
littelfuse.com

Industry News
2025-10-28

Littlefuse announced a definitive agreement to acquire Basler Electric Company for a cash consideration of approximately $350M, subject to customary adjustments. Basler is a designer and manufacturer of electrical control and protection solutions for industrial markets including grid and utility infrastructure, power generation and data center. With three manufacturing facilities in Highland, IL/USA, Taylor, TX/USA and Piedras Negras, Mexico, Basler’s technologies regulate and protect mission-critical equipment.

Reed Relais switches up to 80 W

Learn more:
pickeringrelay.com

Product Release
2025-10-28

Pickering Electronics has upgraded its Series 144 high power reed relays switching up to 80 W while stacking on a 0.25-inch pitch to include a new variant with an electrostatic shield between the switch and the coil to help minimize noise. Electrostatic screening protects against noise that can otherwise occur between the coil drive and high voltage circuits. This new screening option is in addition to Pickering’s internal mu-metal screen, which helps eliminate problems that would otherwise be experienced due to magnetic interaction when devices are closely stacked. Miniature, ultra-high packing density reed relays usually have a switching rating of up to 10 W and 0.5 A, but some applications demand higher switching power and higher carry current specifications. Suitable applications for the Series 144 include mixed signal semiconductor testers, photovoltaic and EV charging, mining gas analysis, medical electronics, in-circuit test equipment, and high voltage instrumentation. As dry reed relays, Series 144 offers an eco-friendlier option than mercury-wetted reed relays. For many applications, it also provides a superior alternative to electromechanical relays (EMRs), where its low-level performance and high isolation significantly improve efficiency and reliability. And compared to EMRs, reed relays deliver faster switching speeds and longer mechanical lifespans. 1 Form A, 2 Form A and 1 Form B configurations are available, with 5 V, 12 V or 24 V coils offered, all with optional internal diode protection. Additional build options are also available on request, including many pin configurations.

Report: Graphene in electronic Applications

Learn more:
idtechex.com

Industry News
2025-10-27

Graphene was initially celebrated as a sci-fi material destined to transform electronics, quantum devices, and futuristic sensors. While expectations soared, commercial reality proved more modest. Rather than enabling transparent phones or levitating trains, graphene first succeeded in practical roles such as enhancing polymer composites in tires, coatings, and sporting goods through improved strength and conductivity. Now, with advances in manufacturing and renewed interest from major electronics and energy companies, the question resurfaces: are we finally approaching the breakthrough era once promised? IDTechEx has now released a report, dubbed "Graphene & 2D Materials 2026-2036: Technologies, Markets, Players", which includes granular 10-year graphene market forecasts, based on profiles of 90+ key players and leverages extensive coverage of many end-use markets for graphene. Graphene is increasingly used in consumer electronics for thermal management, leveraging its exceptional heat conductivity to improve device cooling and reliability. Beyond passive materials, its high surface area and conductivity also make it a strong candidate for energy storage applications, particularly in next-generation batteries and supercapacitors, where faster charging and longer lifetimes are sought. IDTechEx believes that thermal management applications is a key early area for graphene adoption. There is increasing demand for high-performance heat spreaders, and the graphene properties and morphology are well-suited. The thermal conductivity of carbon materials tend to be higher than that seen in metals, with graphene oxide (GO) reporting a thermal conductivity in excess of 3,000 W/m·K.

Ruggedized 6 W DC/DC Converters with 8:1 Inputs

Learn more:
tracopower.com

Product Release
2025-10-24

The TEC 6UI series from TRACO power comprises isolated DC/DC converters featuring an 8:1 input range. These converters are engineered to seamlessly replace and serve as an alternative to existing 2:1 and 4:1 input converter series. With an input voltage range of 9 to 75 V_DC, the TEC 6UI supports a broad spectrum of standard bus voltages, reducing the need for multiple model variants within a single application. Each model includes built-in protection such as short circuit protection, overcurrent limitation, undervoltage lockout, and remote-control functionality. The converters are certified for an operating temperature range of -40 °C to +80 °C in accordance with IEC/EN/UL 62368-1 and are capable of functioning at altitudes up to 5000 m. Housed in a SIP-8 plastic case, the TEC 6UI series is well-suited for space-constrained applications. Available in both single and dual output configurations with an I/O isolation of 1600 V_DC, these converters are suited for a wide range of industrial applications.

10 MHz TMR Current Sensor for Protection and Control of Wide Bandgap Power Electronics

Learn more:
allegromicro.com

Product Release
2025-10-21

Allegro MicroSystems introduced "the industry’s first commercially available magnetic current sensor to achieve 10 MHz bandwidth featuring Allegro’s advanced XtremeSense™ TMR (tunneling magnetoresistance) technology". The ACS37100 TMR current sensor helps power system designers master the control signal chain and unlock the full potential of fast-switching GaN and SiC FETs. Tailored to the needs of electric vehicles (xEVs), clean energy power conversion systems, and AI data center power supplies, the automotive grade ACS37100 achieves a 50 ns response time, providing the high-fidelity data needed for optimal efficiency and protection in demanding high-frequency applications. At sub-megahertz frequencies, conventional magnetic current sensors lack the speed and precision to provide the high-fidelity, real-time data required for stable control and protection loops. This can leave advanced systems vulnerable to damage and may prevent them from operating at their full potential. The ACS37100 is engineered to solve this control challenge. The device delivers a noise of 26 mA_RMS across the full 10 MHz bandwidth. Integrated reinforced isolation is 5 kV for 60 seconds per UL 62368-1 while the internal conductor resistance is specified with 1.2 mΩ.

Bosch Global Supplier Award

Learn more:
isabellenhuette.com

Industry News
2025-10-17

Isabellenhütte has received a Bosch Global Supplier Award and thus ranks globally among the best suppliers of Bosch, the supplier of technology and services. Isabellenhütte received the award in the category "Materials and components". From its roughly 35,000 suppliers, Bosch singled out 49 suppliers from 14 countries for an award. This is the 19th time that the Bosch Group has rewarded outstanding performance by its suppliers – notably as concerns quality, costs, sustainability, and innovation. "This special award recognizes Isabellenhütte as an important development partner for Bosch and is a great tribute to all employees who work daily to continuously improve our processes and the quality of our products. We will continue to focus our strategic orientation on customer orientation and innovation as well as absolute reliability and competitiveness," emphasizes Thilo Gleisberg, CTO at Isabellenhütte.

Reflow-suitable Package for SiC Devices in High-Power Applications

Learn more:
infineon.com

Product Release
2025-10-17

High-power applications such as electric vehicle charging, battery energy storage systems, and commercial, construction and agricultural vehicles (CAVs) are driving the demand for higher system-level power density and efficiency to meet increasing performance expectations. At the same time, these requirements introduce new design challenges, including reliable operation under harsh environmental conditions, robustness against transient overloads, and optimized overall system performance. To address these challenges, Infineon Technologies has launched the CoolSiC™ MOSFETs 1400 V G2 in the TO-247PLUS-4 Reflow package. The devices support higher DC-link voltages and enable improved thermal performance, reduced system size and enhanced reliability. The package technology supports reflow soldering at 260 °C for up to three cycles and enables reliable operation with junction temperatures up to 200 °C. This 1400 V voltage class provides additional margin for faster switching and simplifies protection measures against overvoltage. This eliminates the need for power derating and contributes to overall system robustness. The CoolSiC MOSFETs 1400 V G2 in the TO-247PLUS-4 Reflow package are available in R_DS(on) classes from 6 to 29 mΩ and suitable for applications where high power density is crucial. Infineon also offers CoolSiC MOSFETs 1400 V in a TO-247-4 package with high creepage. R_DS(on) classes for this portfolio range from 11 to 38 mΩ.

Common Mode Choke for Power Line Noise Attenuation

Learn more:
bourns.com

Product Release
2025-10-15

Bourns released its Model SRF1709 Common Mode Choke, featuring a ferrite toroid core for low radiation making it an effective power line noise attenuation solution. This choke provides an inductance of 3.5 mH with a current rating of 2.5 A and an operating temperature range from –40 °C to +85 °C. It is designed to provide effective EMI suppression from both incoming and outgoing paths within the system, making suitable for consumer, industrial and other electronic application designs.

Long-term Contract for green Electricity Supply

Learn more:
infineon.com

Industry News
2025-10-15

Infineon Technologies has concluded Power Purchase Agreements (PPA) with PNE and Statkraft for green electricity. Over the next ten years, Infineon will purchase green electricity from PNE AG’s Schlenzer and Kittlitz III wind farms in Brandenburg in Germany to supply its sites in Dresden, Regensburg, Warstein and Neubiberg near Munich. Seven turbines in the PNE AG wind farms offer a total capacity of 24 MW and a contracted electricity volume of 550 GWh. Statkraft will additionally supply German locations with renewable electricity from solar parks in Spain with a total volume of 220 GWh over the next five years. Infineon aims to switch its global operations to 100 % green electricity this year and become CO₂-neutral for Scope 1 and 2 emissions by 2030. Infineon has been using green electricity in Germany and Europe since the 2021 fiscal year. By concluding Power Purchase Agreements for specific wind and solar power plants in Brandenburg and Spain, the company is now securing its long-term green electricity requirements and supporting the expansion of renewable energies.

100 V automotive-qualified Transistors

Learn more:
infineon.com

Product Release
2025-10-15

Infineon launched the CoolGaN™ automotive transistor 100 V G1 family for production and has started supplying samples of its pre-production product range qualified for automotive applications in accordance with AEC-Q101, including high-voltage (HV) CoolGaN automotive transistors and bidirectional switches. Particularly with the shift from 12 V to 48 V systems in software-defined vehicles, GaN- based power conversion systems allow for improved performance but also enable advanced features such as steer-by-wire and real-time chassis control, improving ride comfort and handling. Infineon’s family of 100 V CoolGaN transistors can be used for applications such as zone control & main DC/DC converters, high-performance auxiliary systems, and Class D Audio amplifiers.

Vertical GaN Sample Prototypes – already in 2025!

Learn more:
verticalsemi.com

Industry News
2025-10-15

Vertical Semiconductor (Vertical), a semiconductor company spun out of the Massachusetts Institute of Technology (MIT), received $11 million in seed funding led by Playground Global to help accelerate development of vertical GaN transistors. Additional investors include JIMCO Technology Fund, milemark•capital, and Shin-Etsu Chemical. The company’s technology is said to reduce energy loss, cut heat, and simplify infrastructure, improving efficiency by up to 30% and enabling a 50% smaller power footprint in AI data center racks. Vertical Semiconductor has demonstrated its vertical GaN technology on 8-inch wafers using standard silicon CMOS semiconductor manufacturing methods, enabling seamless integration with existing process technology and making it ready for real-world deployment for devices from 100 V to 1.2 kV. With a prototype in development and commercial milestones ahead, the company plans to start early sampling for its first prototype packaged devices by the end of the year and a fully integrated solution in 2026.

Digital Power Joint Lab

Learn more:
gigadevice.com

Industry News
2025-10-15

GigaDevice has launched a Digital Power Joint Lab in collaboration with Navitas Semiconductor. By combining GigaDevice’s GD32MCU expertise with Navitas’ advantages in high-frequency, high-speed, and highly integrated GaN technologies, and its GeneSiC™ technology leveraging ‘trench-assisted planar’ technology, the collaboration aims to deliver intelligent and high-efficiency digital power solutions for emerging markets such as AI data centers, photovoltaic inverters, energy storage systems, charging infrastructure, and electric vehicles. Before its official launch, the lab achieved several important technological milestones, including 4.5 kW and 12 kW server power supply solutions and a 500 W single-stage PV micro-inverter. The lab will focus on developing comprehensive system-level reference designs and application-specific solutions to enable smarter, greener, and more energy-efficient power systems across data centers, renewable energy, and electric mobility.

Gate Driver simplifies SiC and IGBT Designs

Learn more:
littelfuse.com

Product Release
2025-10-14

Littelfuse released the IX4352NEAU automotive-qualified low-side gate driver designed to meet the growing demands of SiC MOSFET and IGBT control in electric vehicle (EV) powertrain and DC/DC converter applications. According to the company the IX4352NEAU is "the first AEC-Q100-qualified low-side gate driver to offer an integrated and adjustable negative gate drive bias, eliminating the need for an external negative voltage rail or the costly DC/DC converters typically required to suppress parasitic turn-on of high-speed power devices". It offers an adjustable negative gate drive bias (down to -10 V) which Improves dv/dt immunity, suppresses parasitic turn-on, and ensures faster turn-off of SiC MOSFETs and IGBTs. Furthermore, it offers 9 A peak source and sink drive capability (separate pins), integrated protections and 3.3 V TTL/CMOS-compatible inputs. The devices are AEC-Q100 qualified.

Web-Based Tools for Power Design

Learn more:
analog.com

Industry News
2025-10-14

Analog Devices launched ADI Power Studio, a comprehensive family of products that offers modeling, component recommendations and efficiency analysis with simulation. In addition, ADI is introducing two web-based tools with a modernized user experience under the Power Studio umbrella: ADI Power Studio Planner and ADI Power Studio Designer. These new tools, together with the full ADI Power Studio portfolio, including LTspice®, SIMPLIS®, LTpowerCAD®, LTpowerPlanner®, EE-Sim®, LTpowerPlay® and LTpowerAnalyzer™, streamline the entire power system design process. The Power Studio tools support engineers from initial concept through measurement and evaluation, empowering engineers to design with confidence and efficiency. ADI Power Studio Planner is a web-based tool for system-level power tree planning, which gives engineers an interactive view of their system architecture. ADI Power Studio Designer is also a web-based tool, however, for IC-level power supply design. It provides component recommendations, performance estimates, and tailored efficiency analysis. These tools represent the first phase of ADI’s vision to deliver a fully connected power design workflow for customers.

GaN Partnership

Learn more:
camgandevices.com

Industry News
2025-10-13

Cambridge GaN Devices (CGD), a fabless semiconductor company, is working with GlobalFoundries (GF), a semiconductor manufacturer. The partnership follows CGD’s fabless strategy, expanding the supply chain for the company’s ICeGaN® power devices. CGD’s single-chip technology runs with standard Si MOSFET drivers and is built using a standard Si CMOS wafer fab process. This means that there is no need for a specialist process in the wafer fab. ICeGaN IP is design rather than process-based so is fab agnostic meaning it is easily transferrable to new foundries. Furthermore, the CGD design flow has been built on years of experience in GaN technology and enables fab process porting through a proven methodology. Advanced machine learning algorithms are applied to proprietary test chip characterisation data to refine the models.

1700 V GaN Technology for Next-Generation 800 V_DC AI Data Centers

Learn more:
power.com

Product Release
2025-10-13

Power Integrations outlined the benefits of its PowiGaN™ gallium-nitride technology for next-generation AI data centers. The capabilities of 1250 V and 1700 V PowiGaN technology for 800 V_DC power architectures are explained in a white paper. This paper details the performance advantages of Power Integrations’ 1250 V PowiGaN HEMTs, illustrating their field-proven reliability and their ability to meet the power-density and efficiency requirements (>98 %) of the 800 V_DC architecture. Further, the paper demonstrates that a single 1250 V PowiGaN switch delivers greater power density and efficiency compared to stacked 650 V GaN FETs and competing 1200 V SiC devices.

800 V Direct Current AI Data Center Power Architecture with GaN Devices

Learn more:
renesas.com

Product Release
2025-10-13

Renesas Electronics supports efficient power conversion and distribution for the 800 V Direct Current power architecture announced by NVIDIA. Renesas’ GaN based power solutions are especially suited for the task, supporting dense DC/DC power conversion with operating voltages of 48 V to as high as 400 V, with the option to stack up to 800 V. Based on the LLC Direct Current Transformer (LLC DCX) topology, these converters achieve up to 98 percent efficiency. For the AC/DC front-end, Renesas uses bi-directional GaN switches to simplify rectifier designs and increase power density. Renesas REXFET MOSFETs, drivers and controllers complement the BOM of the DC/DC converters.

White Paper on Power Solutions for Next-Generation 800 V_DC Architecture

Learn more:
rohm.com

Industry News
2025-10-13

ROHM has released a white paper detailing power solutions for AI data centers based on the 800 V_DC architecture. The paper outlines power strategies that support large-scale 800 V_DC power distribution across AI infrastructure. Included in the white paper are ROHM’s power solutions, supported by thermal design simulations, board-level design strategies, and real-world implementation examples. Key highlights of the white paper are rising rack power consumption, the shift to 800 V_DC, the redefined power conversion, the essential role of SiC and GaN, optimized conversion topologies as well as breakthrough device technologies.

Power-Management Solutions for scalable AI Infrastructures

Learn more:
ti.com

Product Release
2025-10-13

Texas Instruments (TI) debuted design resources and power-management chips to help companies meet growing artificial intelligence (AI) computing demands and scale power-management architectures from 12 V to 48 V to 800 V_DC. A typical example is a reference design for a 30 kW AI server power-supply unit featuring a three-phase, three-level flying capacitor power factor correction converter paired with dual delta-delta three-phase inductor-inductor-capacitor converters. Another example is a Gallium-nitride intermediate bus converter capable of delivering up to 1. 6kW of output power in a quarter-brick (58.4 mm by 36.8 mm) form factor based on TI’s LMM104RM0 converter module offering over 97.5 % input-to-output power-conversion efficiency and the possibility for active current sharing between multiple modules.

800 V_DC Power Architecture for AI Data Centers

Learn more:
epc-co.com

Product Release
2025-10-13

To address the challenge that future AI factory data centers will require megawatt-scale rack power delivery systems, EPC has developed a low-profile GaN-based, 6 kW 800 V-to-12.5 V converter based on an Input Series Output Parallel (ISOP) topology. This solution provides a higher power density than previous solutions as it occupies under 5,000 mm² and 8 mm in height, making it well-suited for space-constrained AI boards.It efficiently converts 800 V_DC to 12.5 V_DC close to the load, reducing bussing losses and improving system-level efficiency. By moving from AC directly to 800 V_DC at the rack level, and then stepping down to 12.5 V at the board, EPC’s GaN-based solution eliminates unnecessary conversion stages and enables the scalability, simplicity, and energy optimization demanded by tomorrow’s AI data centers.

Devices for 800 V_DC Power Architecture

Learn more:
aosmd.com

Product Release
2025-10-13

Alpha and Omega Semiconductor (AOS) announced support for the power requirements of the 800 V_DC architecture announced by NVIDIA. The shift from traditional 54 V power distribution to an 800 V_DC system is a fundamental change in data center design, aimed at overcoming the physical limits of existing infrastructure. This paradigm shift requires advanced power semiconductors, particularly Silicon Carbide (SiC) and Gallium Nitride (GaN), to handle the higher voltages and frequencies with maximum efficiency. In terms of High-Voltage Conversion AOS’ SiC devices, including the Gen3 AOM020V120X3 or topside cooled AOGT020V120X2Q, fit either the power sidecar configuration or the single-step conversion of 13.8 kV AC grid power directly to 800 V_DC at the data center perimeter. This simplifies the power chain and enhances overall system efficiency. In High-Density DC/DC Conversion within the racks, AOS’ 650V GaN FETs, like the upcoming AOGT035V65GA1, and the 100 V GaN FETs like AOFG018V10GA1 provide the required density essential for converting the 800 V_DC power to the lower voltages needed by GPUs. Their high-frequency switching capabilities allow for smaller, lighter converters, freeing up valuable space. Furthermore, AOS offers multi-rail 16-phase controllers for the 54 V to 12 V and further downstream conversion stages to the AI SoC.

Schottky Barrier Diode combining low V_F and I_R

Learn more:
rohm.com

Product Release
2025-10-12

ROHM has developed a Schottky barrier diode that overcomes the traditional V_F / I_R trade-off. This way, it delivers high reliability protection. The RBE01VYM6AFH represents the concept of leveraging the low-V_F characteristics of rectification SBDs for protection purposes. By adopting a proprietary architecture, ROHM has achieved low I_R that is typically difficult to realize with low V_F designs. As a result, even under harsh environmental conditions, the device meets market requirements by delivering V_F of less than 300 mV (at I_F=7.5 mA even at Ta = -40 °C), and an I_R of less than 20 mA (at V_R = 3 V even at Ta = 125 °C). These exceptional characteristics not only prevent circuit damage caused by high photovoltaic voltage generated when powered OFF, but also significantly reduce the risk of thermal runaway and malfunction during operation. The AEC-Q101 qualified diode is housed in a compact flat-lead SOD-323HE package (2.5 mm × 1.4 mm) that offers both space efficiency and excellent mountability.

Supporting Wide Bandgap R&D

Learn more:
microtest.net

Product Release
2025-10-11

The Microtest Group, a manufacturer of test systems and testing of chips on packages and silicon wafers, launched two turnkey platforms for power device characterization: Quasar²⁰⁰ and Pulsar⁶⁰⁰. Developed by ipTEST, Microtest’s UK subsidiary, the two platforms are claimed to "set a new benchmark in precision testing". Quasar²⁰⁰ and Pulsar⁶⁰⁰ are designed for academic researchers and engineers developing new semiconductor products. With a plug-and-play approach, they simplify experimental workflows by eliminating the need for custom equipment and reducing manual operations such as soldering and complex test setups. This enables users to obtain accurate, publication-ready results with traceable precision. They speed up datasheet generation, facilitate correlation with production testers, and ensure safe validation of next-generation devices. Quasar²⁰⁰ is suitable for evaluating Si, GaN, and SiC devices. Its counterpart, Pulsar⁶⁰⁰, extends these capabilities to ultra-high current applications, well-suited for testing SiC inverters and automotive systems, supporting short-circuit tests up to 1,000 A_DC and more than 10,000 A_AC. Both platforms offer up to ±0.1% measurement accuracy across all voltage and current waveforms, with typical parasitic inductance below 30 nH in AC tests. UKAS (United Kingdom Accreditation Service)-traceable calibration and comprehensive audit logs ensure reliability, consistency, and compliance from lab benches to production lines.

DC Power Analyzer

Learn more:
itechate.com

Product Release
2025-10-10

The IT2705 DC Power Analyzer is a highly integrated modular DC power analyzer designed for dynamic power consumption measurement, battery simulation, and power characterization. It combines DC power, electronic loads and arbitrary waveform generator with an intuitive GUI, supports Oscilloscope Sampling and Data Logging function, allowing for the creation of complex testing without the need for secondary development. Four current ranges with seamless auto-ranging enable accurate analysis of transient current changes from low-power sleep mode to active operation. Oscilloscope sampling rate up to 200 kHz ensures precise capture of microsecond-level parameter variations. It can be applied for testing IoT devices, chips, automotive electronics, smart wearable devices,etc, helping engineers deeply analyze dynamic waveforms, instant responses, and key electrical characteristics, improving testing efficiency and accuracy.

PwrSoC 2025 – Global Experts Discussed Miniaturization of Power Conversion

Learn more:
pwrsocevents.com

Event News
2025-10-10

The 9th International Workshop on Power Supply on Chip (PwrSoC) has just concluded. Held from September 24 to 26, 2025, in Seoul, South Korea, this year’s workshop marked another significant milestone in the field of integrated power solutions. Over 213 leading researchers and industry professionals from around the world gathered to share insights and advances in the miniaturization and integration of power conversion and power management at the chip, package, and module level. The workshop featured three outstanding plenary talks from industry leaders, offering deep insights into the latest developments in miniaturized and integrated power conversion and power management technologies. Following PwrSoC’s signature single-track format, the workshop presented high-impact invited presentations and an engaging poster session. The technical program covered a wide range of topics, including Systems & Applications, Integrated Magnetics, Topologies & Control, Wide Bandgap Integration, System-Integrated Packaging & Manufacturing, Integrated Capacitors and Energy Storage, and Granular Power Supply.

GaN Half-Bridge Gate Drivers

Learn more:
st.com

Product Release
2025-10-09

STMicroelectronics’ STDRIVEG210 and STDRIVEG211 half-bridge gallium nitride gate drivers are tailored for systems powered from industrial or telecom bus voltages, 72 V battery systems, and 110 V AC line-powered equipment. Rated for maximum rail voltage of 220 V, the drivers integrate linear regulators to generate high-side and low-side 6 V gate signals and provide separate sink and source paths for optimum control. The STDRIVEG210 is featured for power-conversion applications such as server and telecom supplies, battery chargers, adapters, solar micro-inverters and optimizers, LED lighting, and USB-C power sources. Suitable both for resonant and hard-switching topologies, its 300 ns startup time permits to minimize the wake-up time especially during intermittent operation (burst mode). The STDRIVEG211, equipped with overcurrent detection and smart shutdown, targets motor drives in power tools, e-bikes, pumps, and servos, as well as class-D audio amplifiers, in addition to power supplies. Both devices have an integrated bootstrap diode to supply high-side drivers. The separate gate-driving paths can sink 2.4 A and source 1.0 A for fast switching transitions and dV/dt tuning. Protection features include interlocking to prevent cross conduction, while the high-side and low-side drivers have a short propagation delay with 10 ns matching time for low dead time operation. Under-voltage lockout (UVLO) prevents operating in low-efficiency or dangerous conditions and the STDRIVEG211, which is oriented towards motor-drive applications, has additional high-side UVLO protection.

Christian Felgemacher appointed Director Application Engineering

Learn more:
rohm.com

People
2025-10-09

ROHM Semiconductor is pleased to announce the appointment of Dr. Christian Felgemacher as Director Application Engineering. Since October 1st, he has been responsible for both the operational coordination of technical customer support and the strategic direction of ROHM’s application engineering activities in Europe. Since joining ROHM in 2017, Dr. Felgemacher has contributed significantly to the establishment of the Application and Technical Solution Center (ATSC) - with the set-up of the company’s Power Lab and the development of customer-oriented solutions for ROHM’s European customers. In his previous role as Senior Department Manager Application Engineering, he already led the Technical Consulting and Customer Support division with great commitment and promoted conceptual cooperation with important partners from industry and university research. His leadership role was crucial to the expansion of ROHM’s activities in the automotive, industrial, and energy sectors - particularly through initiatives related to SiC technologies and inverter development.

300 mm GaN Program launched

Learn more:
imec-int.com

Industry News
2025-10-06

Imec welcomes AIXTRON, GlobalFoundries, KLA Corporation, Synopsys, and Veeco as first partners in its 300 mm gallium-nitride open innovation program track for low- and high-voltage power electronics applications. This program track, part of Imec’s industrial affiliation program (IIAP) on GaN power electronics, has been set up to develop 300 mm GaN epi growth, and low and high voltage GaN high electron mobility transistor (HEMT) process flows. The use of 300 mm substrates will not only reduce GaN device manufacturing costs, but it will also allow the development of more advanced power electronics devices, such as efficient low-voltage point-of-load converters for CPUs and GPUs. As part of the 300 mm GaN program, a baseline lateral p-GaN HEMT technology platform will first be established for low-voltage applications (100 V and beyond), using 300 mm Si(111) as a substrate. For this, process module work centered around p-GaN etch and Ohmic contact formation is ongoing. Later, high-voltage applications are targeted. For 650 V and above, developments will utilize 300 mm semi-spec and CMOS-compatible QST-® engineered substrates (a material with poly-crystalline AlN core). During the developments, control over the bow of the 300 mm wafers, and their mechanical strength are prime concerns. Imec expects to have full 300mm capabilities installed in its 300mm cleanroom by the end of 2025.

40 W DC/DC Converters for demanding space-constrained Applications

Learn more:
xppower.com

Product Release
2025-10-03

XP Power launched the BCT40T series of 40 W DC/DC converters, housed in a 1" × 1" (25.4 mm × 25.4 mm) package designed for PCB mounting. This series is suited for industrial technology, ITE, and communications applications where space is a critical constraint; it is specifically engineered for sectors such as test & measurement, robotics, process control, analytical instruments, and communications equipment. It features a 4:1 input voltage range and operates with an efficiency of up to 89 %. Models are available with nominal 24 V_DC inputs (ranging from 9.0 V to 36.0 V_DC) and 48 V_DC inputs (ranging from 18.0 V to 75.0 V_DC). The BCT40T offers single regulated outputs ranging from 3.3 V to 24 V_DC, as well as dual regulated outputs at ±12 V_DC and ±15 V_DC. Furthermore, the single-output models offer the flexibility of ±10% output voltage adjustment via an external trim resistor, enabling specific voltage requirements. Protection features include 2kV_DC isolation between input and output, continuous short-circuit protection with auto-recovery, and overload protection typically set between 130 % and 180 %. It also incorporates overtemperature protection (at 115 °C case temperature), under-voltage lockout (UVLO), and overvoltage protection via a Zener diode clamp. The series holds worldwide safety approvals, meeting IEC/UL/EN62368-1 standards, as well as applicable CE and UKCA directives. It also complies with EN55032 Class A/B for conducted and radiated emissions, and EN61000-4-x for immunity. With a 3-year warranty, the BCT40T series stands as a reliable and high-performance solution for power delivery.

Power Company opened its Italian Headquarters

Learn more:
recom-power.com

Industry News
2025-10-02

RECOM Power Solutions (RPS), part of the RECOM Group, officially celebrated the opening of its company headquarters in Mareno di Piave, Italy. The event brought together employees from around the world, customers, and representatives from politics and business to mark this milestone. The celebration embodied the company’s core values – teamwork, passion, and a shared vision. In an atmosphere filled with energy and inspiring conversations, the event marked not only the inauguration of the new site but also the beginning of another chapter in the company’s history.

Innovation Day showcases technical Innovations

Learn more:
datatec.eu

Industry News
2025-10-01

The dataTec Innovation Day, held on September 25 in Stuttgart by the specialist distributor, brought together 216 participants who experienced the latest innovations in test and measurement technology. The event’s name spoke for itself: the selected partner companies presented cutting-edge solutions that set new standards. The dataTec Innovation Day agenda featured live demonstrations, expert talks, and workshops on four key areas: EMPT (Electronic Measurement and Testing Technology), Power (AC/DC power supplies & data loggers), High-End Measurement Technology, and Modular Measurement Technology. Ample networking opportunities rounded off the event. Markus Kohler, Chief Sales Officer of dataTec, emphasized the responsibility of distribution partners in the field of measurement and testing technology. "We are observing three major developments: the increasing automation of measurement and testing tasks, the growing use of artificial intelligence in evaluation, and a clear trend toward more efficient and sustainable solutions. As a specialized distributor with 40 years of experience, our mission is to provide engineers and technicians with the right tools, and to offer practical support through consulting, application expertise, and dedicated service."

Industrial Power Supply Series now also with 600 W and 1000 W Models

Learn more:
lambda.tdk.com

Product Release
2025-09-30

TDK-Lambda has expanded its GUS series of single-output general-purpose power supplies with 600 W and 1000 W models. Designed for applications such as light industrial equipment, factory automation, semiconductor fabrication, ATE test systems, LED lighting, and broadcast, the new models provide output voltages of 12, 24, 36, and 48 V, achieving efficiencies of up to 95 % with a load of 30 to 100 %. Both units feature an internal cooling fan with an acoustic noise, which is typically less than 45 dBA. The GUS600 model measures 101.6 × 41 × 152.4 mm3 (W x H x D), while the GUS1000 has a compact package size of 101.6 × 41 × 177.8 mm3. The models feature an operating temperature range of -20 to +70 °C and the output voltage can be adjusted for non-standard system voltages while output remote on/off is available as an option. Safety certifications include IEC/EN/UL/CSA62368-1 (compliant to IEC61010-1) and carry the CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN 55011-B and EN 55032-B conducted and radiated emissions standards and meet EN 61000-3-2 harmonics and IEC 61000-4 immunity standards. The GUS series also meets IEC 62477-1 (OVC III) and has an input-to-output isolation of 2,000 V_AC, input-to-ground of 3,000 V_AC, and an output-to-ground of 500 V_AC. The nominal input voltage is 100 – 240 V.

Wide Input DC/DC Range delivers 10 W in DIP-24 Package

Learn more:
recom-power.com

Product Release
2025-09-30

The REC10K-RW series of encapsulated DC/DCs converters recently launched by Recom features a 4:1 input range (9-36 V and 18-75 VDC) and a selection of regulated single and dual outputs covering all common requirements. A full 10 W is available up to at least 60 °C ambient, deriving to 100 °C. Output trim and ON/OFF control features are included. Isolation is 4 kVDC for 1 minute (functional), and the parts are safety-certified to IEC/EN/UL/CSA62368-1. Full protection against input under-voltage, over-temperature, and output short-circuits, over-current, and over-voltage are included.

Application-specific MOSFETs provide enhanced dynamic Current Sharing

Learn more:
nexperia.com

Product Release
2025-09-30

Nexperia has added some devices to its family of application-specific MOSFETs (ASFETs), whose features have been tuned to meet the exacting requirements of specific end applications. The 80 V PSMN1R9-80SSJ and 100 V PSMN2R3-100SSJ switches have been designed to provide enhanced dynamic current sharing in high-power 48 V applications that require the use of several closely matched MOSFETs connected in parallel. These include motor drive in electric vehicles like forklifts, e-scooters and mobility devices, as well as high-power industrial motors. When connecting two or more MOSFETs in parallel to support high current capability and reduce conduction losses, it can be challenging for designers to ensure the load current is shared equally between individual devices during turn-on and turn-off. MOSFETs with the lowest V_GS(th) will turn on first, causing higher thermal stress resulting in accelerated failure. In order to provide a sufficient safety margin, engineers often over-specify the MOSFETs used in their end applications. PSMN1R9-80SSJ and PSMN2R3-100SSJ ASFETs offer a 50 % lower current delta between parallel devices (for currents up to 50 A per device) at turn-on/off and also offer a V_GS(th) window that is up to 50 % lower (0.6 V min-to-max). Combined with the R_DS(on) of 1.9 mΩ or 2.3 mΩ this helps to provide high efficiency in power switching applications. These ASFET devices are available in the rugged, space-efficient 8 mm × 8 mm copper-clip LFPAK88 package, delivering operating temperature ranging from -55 °C to +175 °C.

Passive Components: Plant Opening in China

Learn more:
isabellenhuette.com

Industry News
2025-09-29

Isabellenhütte Heusler has opened its first plant in China – in Jintan (Changzhou). The company hosted a grand opening ceremony attended by key stakeholders, including customers, suppliers, service providers, local authorities, and political representatives. Dr. Gero Heusler, member of the advisory board, and the management team – represented by Thilo Gleisberg (CTO) and Dr. Felix Heusler (CFO) – also attended the event and emphasized the strategic importance of the new location for the company’s international orientation. With an investment of approximately 18 million Euros and more than 7,000 m² of production space on three levels, the family-owned company is consistently expanding its presence in the world’s most important industrial and electronics market. The facility targets LEED Silver certification and will operate entirely on renewable electricity. Isabellenhütte has been known for precision and quality since 1482 - today for its precision and power resistors, current measurement systems, and high-quality alloys. From the outset, the plant has focused on efficient, resource-saving processes and building local expertise. Once in regular operation, over 100 skilled jobs will be created; the first 25 employees have already started work. There are also plans to collaborate with universities and research institutions in the region.

Tailored for Industrial Switching Applications

Learn more:
infineon.com

Product Release
2025-09-26

Infineon Technologies launched the OptiMOS™ 7 power MOSFET family for industrial and consumer markets, extending the already existing OptiMOS 7 automotive portfolio. Now there are products specifically for high performance switching, motor-drives, or R_DS(ON)-focused applications. The OptiMOS 7 25 V MOSFETs go beyond the one-size-fits-all approach, offering devices tailored to switching applications. The product variant targets applications such as intermediate bus converters (IBCs) with various topologies used in 48 V conversion for power AI cores, as well as switched-mode power supplies in telecommunications and traditional server applications. There are two technology variants: devices optimized for hard-switching and soft-switching topologies. Compared to the OptiMOS 5 25 V, the new generation achieves up to 20 percent lower R_DS(ON) and up to 25 percent better FOMs, depending on the optimization type. The OptiMOS 7 25 V devices, optimized for switching, are available in source-down PQFN 3.3×3.3 packages with bottom and dual-side cooling variants in a center-gate footprint while the OptiMOS 7 40 V motor-drives optimized family includes SuperSO8 (5x6) and PQFN 3.3×3.3 packages.

Collaboration on SiC Power Electronics Packages to enhance Flexibility

Learn more:
infineon.com

Industry News
2025-09-25

Infineon Technologies and ROHM have signed a Memorandum of Understanding to collaborate on packages for silicon carbide power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs. As part of the agreement, ROHM will adopt Infineon’s top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon’s top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM’s DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247. Infineon and ROHM plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and GaN.

100 V N-channel power MOSFET

Learn more:
toshiba.semicon-storage.com

Product Release
2025-09-25

Toshiba Electronics has launched the TPH2R70AR5, a 100 V-rated N-channel power MOSFET fabricated in the company’s U-MOS11-H process. The MOSFET will be primarily used in switched-mode power supply (SMPS) applications, particularly high-efficiency DC/DC converters. Key application sectors will be within data centres, communications base stations, and other high-end industrial equipment. The TPH2R70AR5 offers significant performance advantages over devices manufactured with the existing U-MOSX-H process. For example, compared to the earlier TPH3R10AQM, the drain-source on-resistance (R_DS(ON)) has reduced by around 8 % to 2.7 mΩ (max.) while the total gate charge (Q_g) is now 37 % lower at 52 nC (typ.). The R_DS(ON) × Q_g figure-of-merit (FoM) is therefore improved by 42 %. Housed in the SOP (N) package measuring 5.15 mm × 6.1 mm, the TPH2R70AR5 is rated for a maximum drain current (I_D) of 190 A at an ambient temperature of 25 °C. The device is capable of operating with a channel temperature (T_ch) up to 175 °C, thereby reducing the need for cooling measures. Toshiba also offers circuit design support tools: the G0 SPICE model, which verifies circuit function in a short time, and highly accurate G2 SPICE models that accurately reproduce transient characteristics.

ASPICE Capability Level 2 for Next Generation Cell Monitoring System achieved

Learn more:
dukosi.com

Industry News
2025-09-23

Dukosi has achieved Automotive SPICE® (ASPICE) Capability Level 2 for development processes related to its next generation cell monitoring system for automotive and electric vehicle (xEV) applications. This important assessment milestone assures compliance with the demanding quality requirements of automotive customers and gives confidence that automotive software and systems are developed with consistent quality, reliability and safety. The intensive assessment was performed by UL Solutions in compliance with ASPICE PAM 4.0 (Process Assessment Model) and in accordance with the ISO/IEC 33002 standard and completed in September 2025. The Automotive Software Process Improvement and Capability Determination (ASPICE) standard, developed by the German Association of the Automotive Industry (VDA), has been established worldwide and is used by leading OEMs and suppliers to evaluate the development processes of software-based systems in and around the vehicle. UL Solutions’ rigorous assessment included Dukosi’s processes across system development, software development, support and project management, and the scope of this assessment went beyond the scope recommended by VDA. Reinforcing the company’s commitment to product safety, Dukosi’s development processes are in full alignment with ASPICE PAM 4.0 and ISO 26262.

Entering the Semiconductor Industry

Learn more:
kurtzersa.com

Industry News
2025-09-23

Kurtz Ersa has taken over the business operations of the insolvent equipment manufacturer ATV Technologie. For Kurtz Ersa, this is the strategic step into the market for production systems for the semiconductor industry that has been announced for some time. All ATV employees will be taken over. ATV will continue to do business under the name Kurtz Ersa Semicon. The company is specialized in the development and distribution of high-quality vacuum soldering systems providing precise temperature control and high homogeneity – essential for the requirements of the semiconductor and microelectronics industry. The interdisciplinary team, consisting of engineers, physicists, and specialists in precision mechanics and electrical engineering, delivers customized solutions for universities, research institutes, laboratories, and manufacturing companies.

Dispensable Thermal Gel offers Vertical Tackiness

Learn more:
parker.com

Product Release
2025-09-22

The Chomerics Division of Parker Hannifin introduced its THERM-GAP™ GEL 75VT, a dispensable thermal gel offering 7.5 W/m-K typical thermal conductivity. The fully cured product performs reliably in vertical and high-vibration applications, including those that are mission-critical. To ensure its suitability for conducting heat away from electronics to heatsinks or enclosures in demanding operating conditions, Parker Chomerics subjected GEL 75VT to several long-term reliability tests. The product passed automotive vertical slump testing, high-vibration testing and telecommunications thermal material verification processes. With its long-term reliability, THERM-GAP GEL 75VT can meet the requirements of design engineers who need their new electronic device to deliver consistent thermal performance over many years of continuous service. Automotive sensors and devices, telecommunications modules, BESS (battery and energy storage system) modules, industrial electronics, network and IT infrastructure, power electronics, and consumer electronics are all among potential beneficiaries. Only a very low compressive force is necessary to ensure deformation under assembly pressure. Fully RoHS-compliant, important electrical properties of THERM-A-GAP GEL 75VT include: 7.9 kV_AC/mm dielectric strength (ASTM D149 test method); 1014 Ωcm volume resistivity (ASTM D257); 5.2 dielectric constant at 1,000 kHz/0.76 mm thick (ASTM D150); and 0.003 dissipation factor at 1,000 kHz/0.76 mm thick (Chomerics test method).

Groundbreaking for EMC Lab

Learn more:
tdk-electronics.tdk.com

Industry News
2025-09-22

TDK is building a new EMC laboratory in Regensburg. It will replace the accredited laboratory that has been in existence for more than 60 years at a new location. The facility will offer internal and external customers state-of-the-art capabilities for measuring electromagnetic compatibility (EMC). The groundbreaking ceremony for the new laboratory has now taken place. TDK is investing a double-digit million euro amount in the new building. The new laboratory will have a total area of almost 1,700 square meters, 1,100 square meters of which will be used for the laboratory and measuring stations. A showroom and a large customer area with meeting rooms are also planned. The centerpiece of the laboratory is a new 10-meter semi-anechoic chamber, in which even large vehicles and powerful industrial applications can be measured. It is complemented by a 3-meter full-absorber chamber for RF and radio applications, which is claimed to enable "the fastest measurement methods at the highest frequencies", as well as a compact chamber for measuring automotive components such as control units or onboard chargers. This chamber is equipped with absorbers that are only ten centimeters deep.

Lift motor developed using Ferrite Magnets – without Rare Earth Materials

Learn more:
ziehl-abegg.com

Industry News
2025-09-19

Ziehl-Abegg claims to be "the first company worldwide to develop a high-performance synchronous lift motor that operates entirely without rare earth magnets – without compromising on power output". The new lift motor, which uses ferrite magnets, eliminates the need for critical raw materials such as neodymium and dysprosium, which have traditionally been considered indispensable for high-performance drives due to their power density. These rare earth elements are sourced almost exclusively from one single country. Despite foregoing rare earth high-performance magnets, this motor delivers identical performance – all within the same dimensions. This is a real advancement, particularly for high-torque lift applications where smooth operation and energy efficiency are critical. A patent application has already been filed.

Current/OS Foundation joined

Learn more:
danisense.com

Industry News
2025-09-18

Danisense has joined the Current/OS Foundation, a nonprofit, open partnership dedicated to ensuring reliable and sustainable hybrid AC/DC power distribution in buildings and installations. The aim of the foundation is to promote direct current electrical safety and to enhance energy resilience to ensure reliable access to electricity for all. The reason for joining is that Danisense "firmly believes that a swift and intelligent energy transition is possible through the wider adoption of DC microgrids, which are already proving superior to AC networks in several applications." According to Danisense "joining the Current/OS Foundation was a natural step for us to help shape the future of DC infrastructure."

100 V MOSFETs deliver low Conduction Losses

Learn more:
nexperia.com

Product Release
2025-09-18

Nexperia launched its AEC-Q101 qualified 100 V MOSFETs in compact CCPAK1212 (12 mm x 12 mm) copper-clip packaging. According to the company "these devices deliver ultra-low conduction losses with on-resistance as low as 0.99 mΩ, and enable safe current above 460 A". This makes them suited for thermally demanding 48 V automotive applications, including on-board chargers (OBC), traction inverters, and battery management systems (BMS). In addition to passenger vehicles, these MOSFETs also benefit 2- and 3-wheel e-mobility, DC/DC converters, and industrial high-current modules, where efficiency and thermal reliability are equally critical. The next-generation 100 V AEC-Q101 trench silicon platform, combined with the thermal performance (R_th(j-b) = 0.1 K/W) of Nexperia’s proprietary copper-clip CCPAK1212 package, enables this R_DS(on). Together, these features provide the critical advantages required in 48 V automotive systems - high current capability, superior power density, and a robust Safe Operating Area (SOA) rating of up to 400 A at 100 V. The devices are available in a choice of inverted top-side cooled (CCPAK1212i) and bottom-side cooled (CCPAK1212) versions.

Manufacturing Partner for Power Devices

Learn more:
idealsemi.com

Industry News
2025-09-18

iDEAL Semiconductor confirms that its SuperQ™ silicon power devices are now in production at Polar Semiconductor, a foundry specializing in high-voltage, power, and sensor technologies. SuperQ uses a patented asymmetrical RESURF structure; it significantly reduces conduction and switching losses – with up to 2.7x lower resistance compared to legacy silicon and cutting switching losses by up to 2.1x versus competing devices. Polar Semiconductor operates a high-volume 200 mm manufacturing facility in Minnesota and is claimed to be "the only majority U.S.-owned foundry with deep expertise in high-voltage and power semiconductors". With a 50-year heritage in automotive production, Polar is IATF 16949 certified and committed to zero-defect manufacturing. iDEAL’s first products – 150 V and 200 V MOSFETs announced in July – are already in production at Polar, with 300 V and 400 V devices to follow. Polar is further expanding to double its manufacturing capacity and invest in next-generation technologies.

Semiconductor Company appoints President and CEO

Learn more:
omnionpower.com

People
2025-09-17

OmniOn Power has appointed David French as its new President and CEO. French has worked for more than 40 years in the semiconductor and electronics industries. Prior to joining OmniOn, he managed NXP’s Mobile and Computing Business Unit. French has also served as the CEO of Cirrus Logic, where he led the company’s transformation towards mixed-signal audio solutions. In addition, he’s held various senior-level positions at Texas Instruments and Analog Devices. French’s appointment follows the resignation of Jeff Schnitzer in August 2025, the company’s prior President and CEO.

Duo of Protection Switches that support Type-C EPR 3.1 extended Power Levels

Learn more:
aosmd.com

Product Release
2025-09-16

Alpha and Omega Semiconductor announced two Type-C sink and source protection switches to increase the power delivery capability of USB Type-C ports to 240 W, paving the way for Type-C extended power range (EPR) implementations. The AOZ13058DI offers overvoltage/overcurrent protection features suited for 48 V Type-C sinking applications, while the AOZ15953DI provides the additional protection features needed for Type-C sourcing applications. These switches help designers safeguard 48 V Type-C EPR capabilities to enhance reliability and functionality in high-performance and gaming laptops, personal computers, monitors, docking, and other higher-power connected portable devices. The AOZ13058DI features a 20 milliohm resistance and provides a set of features including programmable soft-start, overvoltage, ideal diode reverse-current, short-circuit, overcurrent, overtemperature, and ESD protection. These features also help isolate and protect downstream components from abnormal VBUS voltage and potentially harmful current conditions. Ideal diode fast reverse current protection allows multiple power paths to be connected in parallel without interference. The switch’s integrated positive and negative transient voltage suppression at VIN enhances immunity to voltage spikes meeting IEC safety standards (IEC61000-4-2: ±8 kV contact, ±15 kV contact; IEC61000-4-5: 20 A (8/20 µs) on VIN and VOUT). The AOZ13058DI also features a programmable current limit function, permitting its application as a sourcing switch in an EPR 3.1 docking system.

2-in-1 SiC Molded Module

Learn more:
rohm.com

Product Release
2025-09-16

ROHM has developed the "DOT-247," a 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx), suited for industrial applications such as PV inverters, UPS systems, and semiconductor relays. The module retains the versatility of the "TO-247" package while achieving design flexibility and power density. The DOT-247 features a combined structure consisting of two TO-247 packages. This design enables the use of large chips, which were structurally difficult to accommodate in the TO-247 package. Additionally, through optimized package structure, thermal resistance has been reduced by approximately 15 % and inductance by approximately 50 % compared to the TO-247. This enables a power density 2.3 times higher than the TO-247 in a half-bridge configuration – achieving the same power conversion circuit in approximately half the volume. These products featuring the DOT-247 package are available in two topologies: half-bridge and common-source. Currently, two-level inverters are the mainstream in PV inverters, but there is growing demand for multi-level circuits such as three-level NPC, three-level T-NPC, and five-level ANPC to meet the need for higher voltages. In the switching sections of these circuits, topologies such as half-bridge and common-source are mixed – making custom products necessary in many cases when using conventional SiC modules. Therefore, ROHM has developed each of these two topologies into a 2-in-1 module to support various configurations such as NPC circuits and DC/DC converters. Evaluation boards will also be made available.

LLC Half-Bridge Transformers for isolated Gate Driver Bias Supply

Learn more:
coilcraft.com

Product Release
2025-09-16

The HTX8045C Series transformers from Coilcraft build on the proven chip-style construction of the HTX family – an improvement over conventional core and bobbin designs. This surface-mount configuration reduces component size and enhances manufacturing efficiency. With higher isolation voltage compared to the HTX7045C and an interwinding capacitance as low as 0.55 pF, the HTX8045C is particularly well-suited for use in isolated gate driver bias supplies employing the open-loop LLC topology to achieve low EMI noise and high CMTI (Common Mode Transient Immunity). These characteristics make it especially beneficial for high-frequency switches including SiC, GaN and IGBT technologies. The HTX8045C is AEC-Q200-qualified, making it suited for automotive traction inverters and motor controls, automotive on-board chargers (OBC), EV charging stations, battery management systems (BMS), automotive DC/DC converters as well as other automotive and industrial applications.

IGBT7 Modules for high Power Density and easier System Integration

Learn more:
microchip.com

Product Release
2025-09-16

Microchip announced a family of DualPack 3 (DP3) power modules featuring IGBT7 technology available in six variants at 1200 V and 1700 V with high-current ranging from 300–900 A. These DP3 power modules are designed to address the growing demand for compact, cost-effective and simplified power converter solutions while reducing power losses by up to 15–20 % compared to IGBT4 devices. During overload temperatures may rise up to 175 °C. They are suited for industrial drives, renewables, traction, energy storage and agricultural vehicles. Available in a phase-leg configuration, the DP3 power modules in a footprint of approximately 152 mm × 62 mm × 20 mm, provide a second-source option to industry-standard EconoDUAL™ packages.

Fast Recovery Power Rectifier Assemblies

Learn more:
deantechnology.com

Product Release
2025-09-16

Dean Technology (DTI) extended their their power rectifier assembly line, the HRFS5 Series. They join the HRS5 series and HRS10 series of standard recovery power assemblies. The HRFS5 series follows the open frame concept found in the legacy HRS5 and HRS10 products, allowing for better thermal conductivity and are intended for ambient air applications but can also be used in submerged oil environments. It offers a reverse recovery time (TRR) of 75 ns maximum, which is good for switching applications. HRFS5 units offer a maximum repetitive reverse voltage range from 14.4 to 28.8 kV and 5.7 A of average forward current. All products in the HRFS5 series line are capacitor compensated and modular based.

Global Agreement to Distribute High-Energy Density Capacitors

Learn more:
mouser.com

Industry News
2025-09-15

Mouser Electronics announces a global distribution agreement with Quantic Evans, a company which is active in high-energy density capacitors for demanding mission-critical applications. Quantic Evans’ hybrid capacitors, known as EVANSCAPS, serve diverse markets, including aerospace, energy, and communications, where high-reliability, size, weight, and power (SWaP) are crucial. The Quantic Evans HyCap hybrid capacitors, available to order from Mouser, are designed to provide reliable operation in a wide range of harsh environments, including those with shock and vibration conditions. These devices are available in a capacitance range of 68 µF to 2700 µF with a ±20% tolerance, with a voltage range of 10 V_DC to 150 V_DC. The HyCap capacitor series’ robust construction makes them suitable for energy, industrial, space, and defence applications. They are built with patented hybrid wet tantalum technology - featuring a Tantalum Pentoxide anode and a Ruthenium Oxide cathode.

Cleanroom opening at Malaysian Wafer Fab

Learn more:
xfab.com

Industry News
2025-09-12

X-FAB celebrated the grand opening of a manufacturing line at its Sarawak facility. The ceremony was officiated by the Prime Minister of Malaysia, YAB Dato’ Seri Anwar Ibrahim, and the Sarawak Premier, YAB Datuk Patinggi Tan Sri Abang Johari Tun Openg. This major expansion – representing a $600 million investment – added 6,000 square meters of cleanroom space and was completed within two years, from groundbreaking to the first production lots. As a result, the site’s monthly wafer start capacity has increased from 30,000 to 40,000, with a key highlight being the more than doubling of capacity for X-FAB’s 180 nm BCD-on-SOI technology (XT018). BCD-on-SOI technology is superior in many aspects when compared to conventional bulk BCD technologies. Key advantages include virtual latch-up free circuits, strong EMC performance (due to complete isolation with buried oxide/DTI) and simplified handling of below ground transients. The XT018 platform features a portfolio of voltage options from 10 V to 375 V as well as a full range of automotive Grade-0 qualified Non-Volatile-Memory options. It is specifically designed for next generation automotive, industrial and medical applications operating in extreme temperature ranges from -40 to 175 °C.

Compact Power Modules for Consumer and Industrial Equipment

Learn more:
mitsubishielectric.com

Product Release
2025-09-11

Mitsubishi Electric has developed a compact version of its DIPIPM power semiconductor modules specifically for use in consumer and industrial equipment such as packaged air conditioners and heat pump heating and hot water systems. The Compact DIPIPM series comprises the PSS30SF1F6 (30 A / 600V) and the PSS50SF1F6 (50 A / 600 V). By utilizing reverse-conducting IGBTs (RC-IGBTs), the module’s footprint has been reduced to almost 53 % of that of the company’s conventional Mini DIPIPM Ver.7, enabling more compact inverter substrates in packaged air conditioners and other applications. In 1997 Mitsubishi Electric commercialized the DIPIPM intelligent power semiconductor module with a transfer mold structure; this integrated switching elements and the control ICs that drove and protected them. Despite the smaller product size, the use of high-heat dissipation insulating sheet material suppresses temperature rise at the junction, achieving a current rating of 50 A. An additional interlock function contributes to the simplification of inverter substrate design, but it also simplifies the short-circuit protection design of inverter substrates. By maintaining the same insulation distance between terminals and the heat sink as that of conventional products, replacement of those products is facilitated. Furthermore, the lower limit of the continuous operating temperature is now extended to -40 °C.

500 W integrated Power Supplies for High-Rel Applications

Learn more:
gaia-converter.com

Product Release
2025-09-10

GAIA Converter has launched the GRD-50A-M series of scalable 500 W integrated power supplies for high-reliability markets such as military and aerospace. This family of commercial-off-the-shelf board power supplies, designed for 24 V_DC and 28 V_DC input, complies with major military standards, including MIL-STD-1275, MIL-STD-704, and MIL-STD-461. Key specifications and features include a 16-38 V_DC permanent input voltage with transient voltage protection of up to 100 V_DC, as well as reverse polarity and overload protection. The power supplies offer a total output power of 500 W with 12 V_DC, 15 V_DC, 24 V_DC or 28 V_DC output voltage. The GRD-50A-M series features an overall efficiency of 89 %, with full protection for output short circuit (hiccup mode), overvoltage, and overtemperature. The series features 1500 V_DC primary-secondary isolation and 500 V_DC chassis ground isolation. Overall board dimensions are 255 × 70 × 24.25 mm³ and operating temperatures extend from -40 °C to +85 °C base-plate. Furthermore, the GRD-50A-M comes in a range of different configuration options, including board only (/B), coated (/V), and parallel (/P).

Power Supply Unit Reference Design for AI Data Centers and Servers

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infineon.com

Product Release
2025-09-10

Infineon Technologies has introduced a 12 kW reference design for high-performance power supply units (PSUs), specifically designed for AI data centers and server applications. The reference design offers high efficiency and high-power density, and leverages all relevant semiconductor materials silicon, silicon carbide and gallium nitride. It is aimed at research and development engineers, hardware designers, and developers of power electronics systems. To achieve high-performance levels, the design leverages advanced power conversion topologies in both the AC/DC and DC/DC power stages. The front-end AC/DC converter features a 3-level flying capacitor interleaved power factor correction topology, delivering peak efficiency above 99.0 percent while reducing magnetic component volume. This is achieved by Infineon’s CoolSiC™ technology. The isolated DC/DC converter features a full-bridge LLC resonant converter and offers peak efficiency above 98.5 percent, enabled by using two planar high-frequency transformer and Infineon’s CoolGaN™ technology. These architectures, combined with the company’s latest wide-bandgap technologies, achieve a power density of up to 113 W/in³. Another key feature of the 12 kW PSU reference design is the bidirectional energy buffer, which is integrated into the overall power supply topology. This converter enables compliance with hold-up time requirements while significantly reducing capacitance requirements. Furthermore, the energy buffer provides a grid-shaping function, improving system reliability and limiting both fluctuations and the rate of change of power drawn from the grid during transient events.

Commercial Launch of 200 mm SiC Materials Portfolio; ready to Manufacture at Scale

Learn more:
wolfspeed.com

Industry News
2025-09-10

Wolfspeed announced the commercial launch of its 200 mm SiC materials products. Wolfspeed is also offering 200 mm SiC epitaxy for immediate qualification, which, when paired with the company’s 200 mm bare wafers, delivers high scalability and improved quality, enabling the next generation of high-performance power devices. The improved parametric specifications of the 200 mm SiC bare wafers at 350 µm thickness and "enhanced, industry-leading doping and thickness uniformity of the 200 mm epitaxy" is claimed to enable "device makers to improve MOSFET yields, accelerate time-to-market, and deliver more competitive solutions across automotive, renewable energy, industrial, and other high-growth applications".

3 kA TVS Diode in Compact Surface Mount Package

Learn more:
littelfuse.com

Product Release
2025-09-09

Littelfuse launched the DFNAK3 Series of High-Power TVS Diodes. These surface mount devices deliver 3 kA (8/20 µs) surge current protection - claimed to be the highest available in such a small footprint - making them suited for safeguarding DC-powered systems and Power over Ethernet (PoE) applications in demanding environments. Unlike traditional high-surge TVS diodes that come in bulky axial-leaded or large surface mount packages, the DFNAK3 Series uses a compact DFN package - "making it the smallest 3 kA-rated TVS diode on the market today". It offers a 70 % smaller footprint than overcoated alternatives and is also 70 % lower in height than standard SMD-type coated packages. This enables space-constrained, high-density PCB designs without compromising surge performance or system robustness. Engineered to meet IEC 61000-4-5 Level 4 requirements, the DFNAK3 Series provides an alternative to standard TVS diodes, MOVs, and GDTs. The surface mount configuration also supports cost-effective, automated PCB assembly, reducing overall production complexity.

MoU to develop high-performance GaN-based Inverters for Light Evs

Learn more:
infineon.com

Industry News
2025-09-09

Infineon Technologies and Lingji Innovation Technology, a subsidiary of Ninebot, signed a Memorandum of Understanding (MoU) to further drive gallium nitride technology in the area of light electric vehicles (LEV). Infineon provides GaN products supporting Lingji to develop electric two-wheeler inverter systems based on Infineon’s new-generation CoolGaN™ G5 power transistors. Specializing in smart control technologies, Lingji will use its algorithms to target improved drivetrain efficiency at higher power density levels and higher switching frequencies. Considering China’s new standard, that e-Scooter’s plastic mass shall not exceed 5.5 % of vehicle mass, GaN became a preferred choice as it can reduce the number of passive components for space optimization. The MoU aims to design GaN motor drive technologies for 48 V – 72 V solutions to provide compatible core components for high-end models and shared mobility scenarios. For consumers, LEVs stand out as an affordable and accessible entry point into electric mobility. Unlike cars, LEVs typically do not rely on extensive charging infrastructure, as removable batteries allow users to charge at home using standard electrical sockets. Industry analyst McKinsey estimates that this market will reach $340 billion by 2030. Both Infineon and Lingji think that LEVs, with their affordability, ease of access, and environmental benefits, "are leading the transition to vehicle electrification around the world".

Fabless GaN Manufacturer changes CEO

Learn more:
wise-integration.com

People
2025-09-08

Wise Integration appointed Ghislain Kaiser as Chief Executive Officer. Kaiser succeeds CEO and co-founder, Thierry Bouchet, who will continue to serve as Chief Technology Officer and General Manager, leading the worldwide R&D and driving the technological vision. In 2006, Kaiser cofounded Docea Power, a French EDA startup pioneering full-chip, system-level power and thermal modelling, with the vision of addressing the growing power-consumption and thermal challenges in IC and platform design. As CEO, he led the company to domain leadership and its acquisition by Intel in 2015. He then joined Intel, where for the next decade he held senior director roles, most recently overseeing system-simulation engineering and worldwide customer-enablement organization. Those programs tackled critical power, thermal, and performance challenges in designing consumer, data-center, and AI systems. Kaiser began his career at STMicroelectronics, where he held technical and leadership positions across test and product engineering, design, and architecture teams. ‘Wise Integration spun out from CEA Leti in 2020 using the institute’s GaN-on-silicon R&D platform.

Distribution Agreement for Transformers and Coils

Learn more:
anglia-live.com

Industry News
2025-09-08

Anglia Components has signed an exclusive agreement for UK and Ireland with Hahn, a German manufacturer of standard and custom transformers and inductive coils. The product range includes among other products parts targeted at switch-mode power supplies, EMC and boiler-ignition. Hahn was one of the first winding goods manufacturers to implement the stringent requirements of DIN ISO 9001:2015 and has optimized its processes and quality management to meet even tougher VDA Volume 6.3 (Automotive Standard) regulations.

High-Efficiency Power Chokes

Learn more:
itg-electronics.com

Product Release
2025-09-08

ITG Electronics highlights its portfolio of power factor correction (PFC) chokes: the PFC282820 Series, purpose-built for 800 – 5000 W continuous conduction mode PFC boost converter applications in high-wattage industrial and automotive systems. Featuring a 27.5 mm × 20 mm footprint with a height of 28.5 mm, the PFC282820 Series helps design engineers to meet demanding power density requirements without sacrificing efficiency. A wider configuration (27.5 mm × 28.5 mm) is also available to support higher current handling needs, all within the same 5,000 W power ceiling. Part of ITG’s Cubic Design PFC Choke lineup, the PFC282820 Series utilizes flat wire and a square core to deliver enhanced power density and thermal performance compared to traditional toroidal alternatives. The series is engineered to support the evolving requirements of AC to DC power conversion in next-generation industrial and automotive electronics. The PFC282820 Series supports inductance ranges from 33 – 330 µH, with custom values available upon request. High-current output options can handle up to 46 A, with approximately 50 % roll off for superior performance under load.

3.3 kV SiC MOSFET Lineup and Linecard

Learn more:
nomispower.com

Product Release
2025-09-05

NoMIS Power Corporation announced the commercial release of its first 3.3 kV SiC MOSFET, the NoMIS N3PT080MP330 - a planar device with an on-resistance of 80 mΩ (34 A) and "best-in-class figures of merit". Key application areas include battery energy storage systems (BESS), renewable energy converters, transportation electrification, and industrial motor drives. The company offers the N3PT080MP330K 3.3 kV SiC MOSFET in TO-247 4L with high voltage creepage notch for industrial environments. This device is complemented by NoMIS Power’s 160 mΩ SiC bi-directional switches, giving designers multiple options to precisely match device performance to application requirements. The 3.3 kV lineup will expand later this year with the launch of a 50 mΩ (55 A) SiC MOSFET, followed in 2026 by a 25 mΩ (109 A) SiC MOSFET. Samples of are available in both bare die (binned by threshold voltage) and discrete package for temperatures up to 175 °C. In energy and infrastructure the devices are suited for battery energy storage systems (BESS), high-power solar inverters, and DC solid-state circuit breakers (SSCBs) that improve efficiency and resilience in medium- and high-voltage networks, while the main applications in the transportation and marine sector are railway traction systems, heavy-duty EVs (buses & trucks), agriculture and construction machinery, marine propulsion, and ship-to-shore power for ports. In charging and industrial systems the devices enable ultra-fast EV charging stations and large industrial motor drives with power conditioning and processing control.

200 V Family of SuperQ-based MOSFETs

Learn more:
idealsemi.com

Product Release
2025-09-04

iDEAL Semiconductor has announced the first of its 200 V family of SuperQ™-based MOSFETs has entered mass production, with four additional 200 V devices now sampling. The first 200 V device to reach mass production, the iS20M028S1P, is a 25 mO MOSFET in a TO-220 package. iDEAL’s lowest-resistance 200 V devices, now sampling in TOLL and D²PAK-7L, achieve a maximum R_DS(on) of just 5.5 mΩ. "By expanding SuperQ into 200 V, iDEAL is proving that silicon innovation is far from over," said Mark Granahan, CEO and Founder of iDEAL Semiconductor. "These results show that we can deliver the lowest resistance and superior switching behavior while maintaining the manufacturability, reliability, and cost advantages of silicon. It’s a major milestone for our company and for customers looking to push efficiency forward." Target applications for the 200 V SuperQ family include motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar.

Three-Phase Sinewave Filter

Learn more:
emisglobal.com

Product Release
2025-09-04

EMIS has announced the release of its TPQS3113 Three-Phase Sinewave Filter, designed to improve power quality, protect connected equipment, and extend operating lifetimes in demanding industrial applications. Modern compact variable frequency drives (VFDs) that utilize high-speed IGBT switching transistors generate significant harmonic distortion. The TPQS3113 filter smooths these pulse width modulated (PWM) signals into near-perfect sinewaves, providing dV/dt protection, reducing motor losses, and increasing load efficiency. This results in longer motor lifespans, enhanced system reliability, and reduced downtime. In addition to motors, the TPQS3113 also benefits other sensitive equipment such as computers, power converters, and automation systems by minimizing voltage and current waveform distortions.

SiC MOSFETs Adopted in Inverter Brick

Learn more:
rohm.com

Industry News
2025-09-04

ROHM and Schaeffler have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer. The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack. "Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness," says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler.

Expansion of European Distribution Centre and Headquarters

Learn more:
ttieurope.com

Industry News
2025-09-03

TTI IP&E – Europe has officially begun construction to expand its European Distribution Centre (EDC) and headquarters. With the groundbreaking ceremony, the project is now underway in Maisach-Gernlinden. Completion of the building exterior is scheduled for November 2026. Installation of the intralogistics and warehouse technology will then begin. Full completion of the EDC, including all building components and infrastructure, is planned for March 2028. The expansion will double TTI’s footprint at the site, adding 51,000 m² of space directly connected to the existing buildings. This includes approximately 30,000 m² of new warehouse and logistics capacity and 6,000 m² of additional office and administrative space. The project is backed by Invesco Real Estate, Munich, as investor and owner, and executed by BREMER Stuttgart GmbH as general contractor. The expanded EDC will feature state-of-the-art automation, including the world’s largest Autostore system built on a platform structure. This will enhance material flow efficiency and ensure faster, more reliable deliveries across Europe. The expansion will also create around 200 new ergonomic and modern jobs, adding to the current workforce of approximately 700 employees.

ECPE Workshop ’Ultra-High-Voltage Power Electronics’

Learn more:
ecpe.org

Event News
2025-09-03

The shift to renewables demands a stronger, smarter grid. Medium Voltage DC (MVDC) has been identified as a key enabler, allowing efficient long-distance power transmission and mega-watt EV charging. But how do we control such high voltages? Discover the answer with Europe’s leading experts during this workshop November 12 - 13 in Lyon, France or online. Explore the development of cutting-edge SiC semiconductors to facilitate the high-voltage converters shaping the future of energy.

Automotive High-Withstand Voltage LDO Linear Regulator IC

Learn more:
ablic.com

Product Release
2025-09-02

ABLIC launched sales of the S-19230/1 Series, an automotive high-withstand voltage regulator IC. Recently, the power consumption of automotive electronic components like various ECUs and infotainment systems has been steadily increasing. As a countermeasure, there’s a growing trend to increase the voltage of automotive auxiliary batteries from the conventional 12V to 48V. Auxiliary batteries supply power to electronic components via wire harnesses. By quadrupling the voltage to supply the same power, the current can be reduced to one-quarter. This enables the use of thinner wire harnesses, contributing to lighter vehicle designs and improved fuel or electric power efficiency. The S-19230/1 Series supports 48V, 24V, and 12V auxiliary batteries, thanks to its high input voltage tolerance of up to 80V. It also achieves a low operating current of 2.0µA, which is crucial for supplying power to constantly operating sensors and CAN/LIN transceivers, helping to reduce the system’s standby current. Additionally, this product is the first ABLIC voltage regulator to integrate an open-loop protection circuit. The protection circuit suppresses the rise in output voltage to a certain level if the wiring between the external resistor and the IC - used for setting the output voltage - is broken (open fault). This protection circuit eliminates the need for conventional external components used for overvoltage protection, contributing to cost reduction, space saving, and enhanced safety.

600 W Automotive TVS Diode

Learn more:
littelfuse.com

Product Release
2025-09-02

Littelfuse announced the launch of the SZSMF6L Series of unidirectional and bidirectional TVS diodes. These 600 W automotive-grade devices provide robust protection against high-energy transients in a compact, surface-mount SOD-123FL package, making them ideal for increasingly space-constrained automotive and electric vehicle (EV) designs. Building on the success of the 400 W SZSMF4L Series introduced in 2023, the SZSMF6L Series delivers 50% higher peak power handling while maintaining the same compact footprint. The improved surge protection and enhanced clamping performance help safeguard critical automotive systems exposed to voltage spikes from switching events, load dumps, or electrostatic discharge (ESD). "The SZSMF6L Series addresses the evolving demands of EV and automotive system designers who need greater transient protection without compromising board space," said Charlie Cai, Director Product Marketing SBU at Littelfuse. "With the transition to zonal architectures and the continued push for miniaturization, this 600 W solution offers engineers a more robust and thermally reliable alternative to the SZSMF4L for high-stress environments." The SZSMF6L TVS diodes enable more efficient, compact, and rugged designs that meet the growing electrical demands of next-generation vehicles. Their performance and footprint compatibility allow seamless upgrade paths from the SZSMF4L when additional power handling is required.

GaN-on-Si Foundry Services

Learn more:
xfab.com

Industry News
2025-09-02

X-FAB Silicon Foundries is building on its expertise in gallium nitride (GaN) processing technology for high-power applications by introducing GaN-on-Si foundry services for dMode devices as part of its XG035 technology platform. The move further leverages X-FAB’s advantage as a pure-play foundry that now offers a set of processing technologies for GaN and other WBG materials – including SiC – to help fabless semiconductor companies bring their designs to life. X-FAB provides the GaN-on-Si technology from its state-of-the-art 8-inch fab in Dresden, one of six production facilities operated by the company worldwide. The Dresden fab hosts a wide range of specialized processing equipment, measurement tools and technologies that are optimized for GaN development and production, together with analog CMOS, in a stable, trusted, automotive-qualified fab environment. Tools on site have been optimized to handle the thicker GaN-on-Si wafers required by customers in sectors such as automotive, data center, industrial, renewable energy, medical, and others. Thanks to strong high-voltage GaN expertise over several years, the company’s in-house expertise now extends to GaN-on-Si foundry services for dMode devices following the recent release of its XG035 dMode technology as an open foundry platform. The process includes dMode HEMT transistors (scalable from 100V to 650V), often used in power conversion applications. In addition, X-FAB offers customer-specific GaN technologies including dMode, eMode HEMTs as well as Schottky Barrier Diodes, which are popular for high-frequency rectification, power supply, and solar panel applications, among others.

New Brand Identity and Tagline: "In Everything, Better"

Learn more:
tdk.com

Industry News
2025-09-01

TDK Corporation announces the launch of its new brand identity and tagline: "In Everything, Better". This serves as a significant driver of the Long-term Vision "TDK Transformation" and captures the company’s unique venture spirit, its commitment to progress, and its vision for a sustainable future. For 90 years, TDK has quietly shaped the world from within. TDK has been pushing for progress and boldly reinventing itself; from ferrite cores to cassette tapes, to powering the digital age with advanced components, sensors, and batteries, leading the way towards a sustainable future. The company’s technologies nowadays power the devices and systems that define modern life: from smartphones and electric vehicles to industrial applications and energy systems. With over 100,000 passionate team members worldwide, united by a start-up mentality and a drive for innovation, TDK is an enabler behind the scenes, creating impact from within. "In Everything, Better" - the new tagline, debuting in September 2025, is not just a phrase; it is a declaration of TDK’s promise to always strive for better, for ourselves and for society. Noboru Saito, President & CEO of TDK Corporation mentioned "The new brand identity aligns with our Long-term Vision of TDK Transformation, and it is rooted in our Corporate Motto of ’Contributing to culture and industry through creativity’ and Corporate Principles of ’Vision, Courage, and Trust’. It is what we believe, how we act, and how we communicate. It is who we are today, where we are going in the future and the legacy we create."

150 V MOSFETs in TOLL, TOLG, and TOLT Packages

Learn more:
infineon.com

Product Release
2025-09-01

Infineon Technologies has expanded its OptiMOS™ 6 portfolio by introducing the Automotive 150 V MOSFET family. These devices are specially developed to meet the demanding requirements of modern electric vehicles and are available in three advanced package options: TOLL, TOLG, and TOLT. The automotive MOSFET family, based on Infineon’s 6th generation OptiMOS technology, offers two different drain-source resistance levels across all device variants. All variants are rated for the 150 V voltage class and deliver the lowest R_DS(on) available in this class, reaching as low as 2.5 mΩ. This enables minimal conduction losses and excellent efficiency. The tight distribution of the gate threshold voltage (V_GS(th)) supports optimal synchronization when multiple MOSFETs are used in parallel configurations, which is particularly relevant for high-power automotive systems. The devices also feature low switching losses up to high frequencies, allowing for highly efficient operation in fast-switching applications such as modern DC/DC converters. In terms of thermal performance, the variants achieve a thermal resistance as low as 0.4 K/W. This significantly improves heat dissipation, reduces system-level cooling requirements, and lowers associated expenses.

40 Watt DC/DC Converter

Learn more:
tracopower.com

Product Release
2025-09-01

The THL 40WI series extends Traco Power’s existing DC/DC converter portfolio with 40 Watt, 1′ × 1′ package converters. With the focus on combining cost efficiency and quality this isolated high performance DC/DC converter series is suitable for many different applications. The series comes in an encapsulated, shielded 1 × 1′ × 0.43′ metal package and offers integrated remote on/off and trim functions. High efficiency up to 93% enables the converter to operate from –40°C to +65°C without derating. All models have a wide 4:1 input voltage range and precisely regulated, isolated outputs. The series meets the latest IT safety certifications (UL 62368-1) and is suitable for uses in mobile equipment, instrumentation, distributed power architectures in communication and industrial electronics and everywhere where cost efficiency and quality are critical factors.

Strategic Distribution Partnership to Expand Presence Across APAC

Learn more:
lotus-microsystems.com

Industry News
2025-08-29

Lotus Microsystems and EDOM Technology jointly announced the signing of a strategic distribution agreement for the Asia-Pacific region. This collaboration combines Lotus Microsystems’ power management solutions with EDOM Technology’s extensive distribution network, strong field application engineering (FAE) force, and deep market expertise. The partnership is designed to accelerate customer adoption, deliver superior technical support, and strengthen the presence of both companies across the fast-growing APAC markets. Power and thermal management are crucial aspects of electronic design, especially in the rapidly developing computing, networking, and IoT markets. Effective thermal management ensures that devices operate within a safe temperature range, optimizing performance and extending their operational life. Lotus Microsystems’ work on high-efficiency power modules supports more sustainable computing by reducing energy losses and improving overall power usage effectiveness. "We are delighted to partner with EDOM Technology, a recognized leader in distribution across Asia. This agreement marks an important step in our global expansion, enabling Lotus Microsystems to better serve customers in key APAC markets with the strong support and capabilities that EDOM provides."said Hans Hasselby-Andersen, CEO of Lotus Microsystems.

CAN FD Transceiver Achieves Toyota VeLIO Certification

Learn more:
novosns.com

Product Release
2025-08-29

NOVOSENSE Microelectronics recently announced that its automotive-grade CAN FD transceiver, the NCA1044-Q1, has successfully passed Toyota’s VeLIO (Vehicle LAN Interoperability and Optimization) certification. Prior to this, the device had already obtained the IBEE/FTZ-Zwickau EMC certification in Europe. The certification process involves stringent testing, including Transceiver Delay, dV/dt characteristics, R>D and D>R Distortion Delays, Static and Frequency Response of Threshold Voltage, Single-Ended S-Parameters, and Static Tests. The NCA1044-Q1 successfully passed all these tests, underscoring its capabilities in high-speed communication, signal integrity, and electromagnetic compatibility. In addition to VeLIO, the NCA1044-Q1 has also been certified by IBEE/FTZ-Zwickau according to the IEC 62228-3 standard, while also meeting Volkswagen’s VW80121-3, 2023-12 EMC requirements. Unlike SAE J2962, the IEC 62228-3 standard focuses directly on the EMC performance of the transceiver itself, making the certification one of the most rigorous benchmarks in the automotive industry and a widely referenced standard across global automakers. The IBEE/FTZ-Zwickau EMC certification covers four major categories: Emission RF Disturbances, Immunity to RF Disturbances, Immunity to Transients, and Immunity to ESD. The NCA1044-Q1 passed all tests successfully, providing high confidence in its robustness under demanding automotive conditions. With both VeLIO and IBEE/FTZ-Zwickau certifications, the NCA1044-Q1 significantly reduces its implementation and system verification costs for OEMs and Tier 1 suppliers.

Power Modules to Accelerate Data Center Power Architecture

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infineon.com

Industry News
2025-08-28

Infineon Technologies announced the strengthening of its existing collaboration with Delta Electronics in the development of high-density power modules capable of enabling vertical power delivery to AI processors in hyperscale data centers. Together, the companies are taking a next step to drive decarbonization and digitalization in AI data centers further. The partnership leverages Infineon’s ultra-thin silicon (MOSFET) chip technology and embedded packaging expertise, as well as Delta’s industry-leading power module design and manufacturing capabilities. This results in highly dense modules with exceptional efficiency to enable vertical power delivery (VPD) architecture to the xPUs in hyperscale data centers. The usage of vertical power delivery modules in comparison to a lateral mounted discrete solution can save up to 150 tons of CO₂ over an expected lifetime of three years per rack. Assuming that future hyperscale data centers will consists of up to 100 server racks, the amount of carbon dioxide saved is equivalent to the CO₂ emissions of 4000 households per year. Infineon’s OptiMOS™ silicon-based 90 A integrated power-stage solution is being utilized by Delta to develop VPD modules. The use of vertical power delivery is a key factor in improving system efficiency as it allows for a more direct and compact power delivery path. By delivering power vertically, rather than horizontally, the VPD modules reduce power delivery network losses in the system. This, in turn, enables the modules to achieve higher power density and efficiency, while also reducing the amount of heat generated due to less power loss. Additionally, the vertical power delivery design also frees up space on the system board, allowing hyperscalers a more efficient use of space and the development of more compact and dense data center designs reducing total-cost of ownership.

Jingya Huang Appointed Senior Manager Marketing Communications

Learn more:
indium.com

People
2025-08-28

With its commitment to innovation and growth through employee development, Indium Corporation announces the promotion of Jingya Huang to Senior Manager, Marketing Communications, to continue to lead the company’s branding and promotional efforts. In her new role, Huang is responsible for the strategic direction of Indium Corporation’s global marketing communications initiatives, focusing on innovation and maximizing impact in markets worldwide. She will continue to lead the Marketing Communications team with an emphasis on fostering innovation, ownership, and collaboration. Huang will also provide strategic support to other internal teams and lead high-priority special projects that advance the company’s mission and global presence. Huang joined Indium Corporation as Marketing Communications Assistant Manager in 2016. She was promoted to Marketing Communications Manager in 2020, at which point she began leading all global marketing communications efforts and the entire Marketing Communications team.

Digital Hall latch IC in CMOS technology

Learn more:
melexis.com

Product Release
2025-08-28

Melexis unveils a variant of the MLX92211, a 3-wire Hall-effect latch. This device is designed for lateral magnetic position sensing, with high ESD protection and a high output current limit. This latest addition enables motor miniaturization by providing enhanced integration and cost-effective performance, ideal for automotive compact motors used in applications such as seat motors, sunroofs and thermal expansion valves. The MLX92211 IMC addresses these head-on with an integrated magnetic concentrator (IMC) that enables lateral sensing in a surface-mount device (SMD) TSOT-3L package – eliminating the need for through-hole components and aligning with modern automated assembly processes. The result is a reduced motor height, improved packaging flexibility, and optimized manufacturing workflows. The single-package device integrates a voltage regulator (2.7 to 24V operating range), a Hall effect sensor with advanced offset cancellation, and an open-drain output driver. The magnetic core’s enhanced offset cancellation system facilitates faster, more accurate, and robust processing, irrespective of temperature and stress, and includes a negative temperature coefficient to counteract the natural weakening of magnets at high temperatures. The robust latch sensor can be used in both 3-wire and 2-wire (with external resistor) configurations, with the 30mA current limit easily sufficient for maintaining safe and consistent operation in environments such as seat motors – where continuous current up to 25mA is often required. Combined with strong electrostatic discharge (ESD) protection (8kV), automatic output shut-off with self-recovery, and ASIL A functional safety readiness, the MLX92211 IMC meets the reliability requirements of modern automotive deployments.

ReVolt Charges up Hollywood’s Clean Energy

Learn more:
vicorpower.com

Industry News
2025-08-27

Most production companies today rely on gasoline and diesel generators to operate their movie sets. But as these become more elaborate - with enormous footprints and an expanding array of specialized electronics - energy demands have escalated, as have unwanted levels of dangerous CO₂ emissions. ReVolt Holdings has developed a better way to power movie sets and studio backlots by providing clean, mobile, always-on electricity. ReVolt systems power everything - from cameras, sound and lighting equipment to special effects rigs and basecamps - quietly, efficiently and with no CO₂ output. Diesel generators also produce "dirty" power that requires extra filtration when used in sensitive digital lighting and motion control equipment. ReVolt charging systems produce a pure sine wave profile that ensures a clean, stable power source. To ensure stable voltage levels, ReVolt adopted Vicor BCM® bus converters, DCM™ DC-DC converters, and most recently, PRM™ regulators. The BCM4414 converts and isolates 800V into a 48V at 35A bus, which the DCM3414 taps off to regulate 24V loads. The 770W/in³ BCM4414 also serves as a battery emulator, reducing the need for a conventional and bulky 48V battery. The PRM is a non-isolated buck-boost DC-DC regulator capable of converting 48V into various output voltages, with power density exceeding 2kW/in³ and 96% efficiency. Portable, clean energy is in demand today more than ever. As it imprints its power concept on the film industry, ReVolt is preparing to address a variety of new applications, from servicing natural disaster zones to providing power for construction and live events. With the trend toward eMobility and greener, more sustainable power, the relationship with Vicor - grounded in modular power delivery - is gaining momentum and setting the stage for a greener future.

Strengthening Supply Resilience of Key Material for Global Semiconductor Industry

Learn more:
asahi-kasei.com

Industry News
2025-08-26

Asahi Kasei will increase PIMEL™ photosensitive polyimide (PSPI) production capacity at its Fuji City facility in Shizuoka Prefecture, Japan. PSPI is a key material for the global electronics industry, mainly used for buffer coatings and passivation layers in semiconductor applications. By doubling its capacity by 2030, Asahi Kasei underlines its commitment to growing its Electronics business and reinforcing its position as a key supplier for the global semiconductor industry. With the global semiconductor industry entering a new growth cycle and projected to surpass US$1 trillion in revenue by the mid-2030s, as reported by consulting firm Alvarez & Marsal, Asahi Kasei has forecasted that the demand for next-generation semiconductor interlayer insulation will continue to grow rapidly at an average annual growth rate of 8%. In response to this quickly rising demand, Asahi Kasei completed the construction of a new plant producing PIMEL™ photosensitive polyimide in Fuji City, Shizuoka Prefecture, in December 2024. Since then, the company has decided to expand production in Fuji City further, doubling the 2024 capacity by 2030. This expansion is expected to significantly improve the supply resilience of essential materials in the manufacturing of semiconductors. Asahi Kasei will invest approximately ¥16 billion in this expansion.

Conference on Production Technologies and Systems for Electric Mobility (EPTS)

Learn more:
epts-conference.com

Event News
2025-08-25

The Electric Drives Production Conference (E|DPC) is expanding to become the Conference on Production Technologies and Systems for Electric Mobility (EPTS), taking place in Karlsruhe, Germany October 8 & 9. Join leading experts from industry and research for two days packed with high level keynotes, sound technical presentations and networking opportunities.

New CEO of WBG Power Semiconductor Company

Learn more:
navitassemi.com

People
2025-08-25

Navitas Semiconductor's Board of Directors has appointed Chris Allexandre as President and Chief Executive Officer, effective September 1, 2025. He will also join the Company's Board of Directors. The new CEO succeeds Gene Sheridan, a Navitas founder, who will step down as President and CEO and from the Board on August 31, 2025. Allexandre brings more than 25 years of experience in the semiconductor industry. Most recently, he served in senior executive roles at Renesas Electronics, including Senior Vice President and General Manager of its Power Division from October 2023. Chris Allexandre oversaw Renesas' $2.5 billion power management business and led the pivot and execution of its power strategies toward the cloud infrastructure, automotive and industrial markets, including Renesas' acquisition and integration of Transphorm, Inc., a supplier of GaN solutions, in June 2024. Allexandre was previously Renesas' Chief Sales and Marketing Officer from 2019 to 2023. Prior to his tenure at Renesas, Navitas' new CEO held executive roles at Integrated Device Technology (IDT) (acquired by Renesas in 2019) as Senior Vice President of Sales and Marketing; at NXP Corporation as Senior Vice President, Worldwide Sales for Mass Market; and at Fairchild Semiconductor as Senior Vice President of Worldwide Sales, Marketing and Business Operations. Chris Allexandre began his career at Texas Instruments, beginning in its New College Graduate rotation program, and over 16 years in business and sales roles based in Europe and China, becoming TI's Vice President of Sales for EMEA and a member of TI's strategic leadership team in 2012. Allexandre's management experience spans analog, power, mixed-signal and digital products across cloud, industrial, mobile, consumer, telecom, and automotive markets. Chris Allexandre holds a Master of Science in Electrical Engineering from the Institut Supérieur de l'Électronique et du Numérique (ISEN) in Lille, France.

Back to School Giveaway to Empower Tomorrow’s Innovators

Learn more:
digikey.com

Industry News
2025-08-25

DigiKey announces its annual Back to School Giveaway, which offers university students a chance to win products and swag, including one grand prize of a Teledyne LeCroy Power Supply unit. Five entrants will be randomly selected to win a prize package that includes products such as an Aven Tools LED lamp, a Pokit Innovations all-in-one digital tool, a Weidmüller wire stripper, an Adafruit Ladyada’s electronics toolkit, DigiKey swag and more. Plus, one grand prize winner will also receive a Teledyne LeCroy Power Supply unit. "Each year, the Back to School Giveaway is a celebration of curiosity, creativity and the bright future ahead," said Brooks Vigen, senior director of global strategic marketing at DigiKey. "DigiKey is proud to support students as they turn bold ideas into real-world innovations, and we’re excited to see how this generation will shape the technologies of tomorrow." The sweepstakes is open to any student with a university or college email address, and entries may be made in students’ local language. Submissions are open until Oct. 24, 2025, and winners will be announced around Nov. 15, 2025.

Collaboration on SiC Power Semiconductor Wafers

Learn more:
toshiba.semicon-storage.com

Industry News
2025-08-22

Toshiba Electronic Devices & Storage Corporation ("Toshiba") and SICC ("SICC") have signed a memorandum of understanding (MOU) under which they will explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two companies will discuss the scope of their joint efforts and mutual support. Toshiba has an established track record in developing, manufacturing and selling SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and the automotive segment. The company aims to further reduce power losses in the devices and to improve their reliability and efficiency in future high-efficiency power conversion applications. Achieving these goals requires close collaboration with an innovator in SiC wafer technology. Collaboration with SICC, a global leader in SiC wafer development and mass production technology, is expected to drive forward optimal solutions for various applications and accelerate business expansion.

RT Box Workshop in Zurich

Learn more:
plexim.com

Industry News
2025-08-21

In the workshop, you will learn modeling techniques for real-time simulations using PLECS with the PLECS RT Box. You will work hands-on with hardware-in-the-loop (HIL) and rapid control prototyping (RCP) application examples. You will see that step size can be reduced to nanoseconds, even for large-scale models. In addition to the technical aspects, the workshop offers an opportunity to connect with the developers of PLECS. The required software and PLECS RT Box hardware will be provided for the workshop.

USB-C Power Solution with Three-Level Topology

Learn more:
renesas.com

Product Release
2025-08-20

Renesas Electronics introduced the RAA489300/RAA489301 high-performance buck controller designed with a three-level buck topology used for battery charging and voltage regulation in USB-C systems such as multiple-port USB-PD chargers, portable power stations, PC docking station, robots, drones, and other applications that need a high efficiency DC/DC controller. The three-level buck converter topology enabled by the new IC delivers exceptional efficiency and significantly reduces the required inductance for regulating the output voltage. Its innovative design minimizes power loss and reduces system size, making it ideal for compact, high-performance applications. The three-level topology consists of two additional switches and a flying capacitor compared to a conventional two-level buck converter. The flying capacitor reduces voltage stress on the switches, allowing designers to use lower voltage FETs with better figures of merit. The result is reduced conduction and switching losses. This topology also enables the use of a smaller inductor with peak-to-peak ripple of only about 25 percent of that of a two-level converter, enabling reduced inductor core and direct current resistance losses. The 3-Level DC-DC RAA489300/RAA489301 battery charger and voltage regulator offers superior thermal performance, which reduces cooling requirements and results in cost and space savings. This innovative approach addresses the growing demand for compact and efficient power management systems.

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1,200 V Automotive-Grade Low-Loss Diodes	Taiwan Semiconductors introduced a series of autom...	12618	Product Release	1,200 V Automotive-Grade Low-Loss Diodes	Taiwan Semiconductors introduced a series of automotive-grade, low-loss diodes offered in industry-standard packages. The 1,200 V PLA/PLD series, with ratings of 15 A, 30 A or 60 A, all feature maximum forward voltages of 1.3 V, a reverse leakage of less than 10 µA at 25 °C and junction temperatures of up to 175 °C. Available in three popular packages (ThinDPAK, D2PAK-D and TO-247BD), the 1,200V diodes enable easy drop-in replacement to improve efficiency in existing designs. Applications include three-phase AC/DC converters, server and computing power systems, EV charging stations, on-board battery chargers, Vienna rectifiers, totem pole and bridgeless topologies, inverters and UPS systems, and general-purpose rectification in high-power systems of various types.	12.11.2025 13:30:00	Nov	news_2025-11-15_15.jpg	\images\news_2025-11-15_15.jpg	https://www.taiwansemi.com/en/1200v-low-loss-diode/	taiwansemi.com
GaN Technology Licensed to Accelerate U.S.-Manufactured Power Portfolio	GlobalFoundries (GF) announced that it has entered...	12605	Industry News	GaN Technology Licensed to Accelerate U.S.-Manufactured Power Portfolio	GlobalFoundries (GF) announced that it has entered into a technology licensing agreement with TSMC for 650V and 80V Gallium Nitride (GaN) technology. This strategic move will accelerate GF’s next generation of GaN products for datacenter, industrial and automotive power applications and provide U.S.-based GaN capacity for a global customer base. As traditional silicon CMOS technologies hit their performance limits, GaN is emerging as the next-generation solution for meeting the increasing demand for higher efficiency, power density and compactness in power systems. GF is developing a comprehensive GaN portfolio, including high-performance 650V and 80V technologies aimed at enabling electric vehicles, datacenters, renewable energy systems and fast-charging electronics. GF’s GaN solutions are designed for harsh environments, with a holistic approach to GaN reliability that spans process development, device performance and application integration. GF will qualify the licensed GaN technology at its manufacturing facility in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology to accelerate volume production for customers seeking next-generation power devices. Development is set for early 2026, with production to begin later in the year.	10.11.2025 07:00:00	Nov	news_2025-11-15_2.jpg	\images\news_2025-11-15_2.jpg	https://gf.com/gf-press-release/globalfoundries-licenses-gan-technology-from-tsmc-to-accelerate-u-s-manufactured-power-portfolio-for-datacenter-industrial-and-automotive-custo/	gf.com
EPCIA President appointed	According to Murata Manufacturing, Christophe Pott...	12608	People	EPCIA President appointed	According to Murata Manufacturing, Christophe Pottier, Vice President of Sales for Murata Europe, has been appointed as President of the European Passive Components Industry Association (EPCIA), effective immediately. Mr. Pottier brings over three decades of deep experience within the electronics industry to his new role, with a strong focus on strategic sales and automotive sector initiatives. His experience at Murata, where he has contributed across multiple domains, including strategic sales in telecom and collaborative initiatives in the automotive industry, has shaped his understanding of how these components quietly power advanced technologies. As EPCIA President, Mr. Pottier’s mission is to promote a stronger, more connected passive components ecosystem across Europe by focusing on three key areas. The first area is elevating the role of passive components as these elements regulate, protect, and optimize electronic signals, making them indispensable to chip performance and system reliability. The second focal point is fostering collaboration which means working with adjacent industries to meet demands for miniaturization, high-speed data, and energy efficiency as integration into semiconductor packaging accelerates. Strengthening ties with research institutes is the third key area: Driving innovation in materials science, sustainability, and advanced manufacturing through partnerships with Europe’s academic and research institutions.	07.11.2025 10:00:00	Nov	news_2025-11-15_5.jpg	\images\news_2025-11-15_5.jpg	https://www.murata.com/en-eu/news/other/other/2025/1107	murata.com
Job Promotion in Solutions for Power Electronics	Indium Corporation has promoted Joseph Hertline to...	12610	People	Job Promotion in Solutions for Power Electronics	Indium Corporation has promoted Joseph Hertline to Senior Product Manager, Engineered Solder Materials (ESM). In his new role, as Senior Product Manager, Hertline is now responsible for driving the growth of Indium Corporation’s global ESM initiatives through the development of marketing strategies. He will continue to lead the company’s efforts in the power electronics application segment with a broader scope of products, applications, and customer segments. He will also continue to lead ESM Application Engineering efforts for all ESM product lines. Hertline has more than a decade of experience in engineering and product management within the electronics industry and joined Indium Corporation in 2020 as Product Manager, Power Electronics.	06.11.2025 12:00:00	Nov	news_2025-11-15_7.jpg	\images\news_2025-11-15_7.jpg	https://www.indium.com/press-releases/indium-corporation-promotion-reflects-hertlines-leadership-in-advancing-innovative-soldering-solutions-for-power-electronics/	indium.com
MicroModule Series expanded	The MagI³C-VDMM power module product family f...	12616	Product Release	MicroModule Series expanded	The MagI³C-VDMM power module product family from Würth Elektronik continues to grow: The three variable step-down MicroModules for input voltages from 2.5 V to 5.5 V and adjustable output voltages from 0.6 V to 4 V are available in pin-compatible 1 A, 2 A, and 3 A versions. The modules achieve a peak efficiency of up to 96 %. With a quiescent current of 4 µA,they are also suitable for battery-powered applications. MagI³C-VDMM power modules represent a fully integrated DC/DC power supply that includes a switching regulator with integrated MOSFETs, as well as a controller, compensation, and a shielded inductor – all in a single package. The modules, which can replace linear regulators, are equipped with integrated protection circuits. They protect against thermal overload and electrical damage caused by overcurrent, short circuit and undervoltage. Depending on the load, they automatically switch between pulse frequency modulation (PFM) and pulse width modulation (PWM) modes. These mode transitions allows optimal efficiency and output voltage ripple at all load currents. To save energy, the power module can be set to resting mode using an additional pin. Together, the Power-GOOD and EN functions also enable power sequencing. These MagI³C-VDMM power modules measure 3.5 x 3.5 x 1.5 mm³ in an LGA-9 package. The devices are suitable for point-of-load DC/DC applications, industrial and medical equipment, test and measurement devices, for powering DSPs, FPGAs, MCUs and MPUs as well as I/O interfaces. In the operating temperature range from -40 °C to 105 °C the modules comply with EN55032 (CISPR-32) Class B for radiated emissions.	06.11.2025 11:30:00	Nov	news_2025-11-15_13.jpg	\images\news_2025-11-15_13.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=expansion-magi3c-vdmm	we-online.com
Reference Design combines Power, Sensing, and Control for Robot Joints and UAVs – fitting in A1 Robot Motor	Efficient Power Conversion Corporation (EPC) launc...	12614	Product Release	Reference Design combines Power, Sensing, and Control for Robot Joints and UAVs – fitting in A1 Robot Motor	Efficient Power Conversion Corporation (EPC) launched the EPC91120, a 3-phase brushless DC (BLDC) motor drive inverter optimized for humanoid robot joints. "Featuring EPC’s EPC23102 ePower™ Stage IC, the EPC91120 delivers superior efficiency, high power density, and precise motion control in a compact 32 mm-diameter footprint designed to integrate directly within robotic motor assemblies", the company reports. The EPC91120 evaluation board integrates three EPC23102 GaN monolithic half-bridge ICs with an on-board microcontroller, current and voltage sensing, magnetic encoder interface, and RS485 communication. The system operates from 15 V to 55 V<sub>DC</sub>, delivering up to 21 A peak (15 A<sub>RMS</sub>) continuous current and 42 A peak (30 A<sub>RMS</sub>) pulsed. With a 100 kHz PWM switching frequency and only 50 ns dead time, the EPC91120 achieves exceptional efficiency and dynamic performance, ideal for humanoid robot joint motors and other high-precision motion applications. The board was specifically designed to fit the mechanical dimensions of the Unitree A1 robot motor, enabling direct evaluation in real-world robotic systems. Under natural convection cooling at 26 °C ambient, the EPC91120 delivers 7 ARMS per phase without a heatsink and up to 15 A<sub>RMS</sub> when integrated into the humanoid joint motor casing as a heatsink. Experimental results demonstrate total system efficiencies exceeding 80 % from DC input to mechanical output, validating the design for high-torque, low-weight robotic joints.	05.11.2025 09:30:00	Nov	news_2025-11-15_11.jpg	\images\news_2025-11-15_11.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3247/epc%e2%80%99s-gan-power-ics-enable-a-new-era-of-robotic-agility	epc-co.com
Win a Power Analyzer Set for your Research Lab	Just in time for Christmas, HIOKI EUROPE GmbH is g...	12604	Industry News	Win a Power Analyzer Set for your Research Lab	Just in time for Christmas, HIOKI EUROPE GmbH is giving away a complete Power Analyzer Set with a retail value of around EUR 35,000 consisting of ex-demo devices. This special giveaway campaign is open exclusively to universities and research institutions across the European Union specialising in power electronics or energy efficiency. Are these your areas of expertise? Join the competition at shop.hioki.eu/win-PW6001-Power-Analyzer by briefly describing how you would use power analysis in your application – the most convincing idea wins! Among all participants, the HIOKI jury will award a Power Analyzer Set*. With a bit of luck, you could find this special present under your institution’s Christmas tree this year. Deadline for entries: 19 December 2025.	31.10.2025 06:00:00	Oct	news_2025-11-15_1.jpg	\images\news_2025-11-15_1.jpg	https://shop.hioki.eu/win-PW6001-Power-Analyzer	hioki.eu/win
Vertical GaN Semiconductors	As global energy demand surges from AI data center...	12621	Product Release	Vertical GaN Semiconductors	As global energy demand surges from AI data centers, electric vehicles, and other energy intensive applications, onsemi has introduced vertical gallium nitride (vGaN) power semiconductors, setting a new benchmark for power density, efficiency and ruggedness for these applications. These next-generation GaN-on-GaN power semiconductors conduct current vertically through the compound semiconductor, enabling higher operating voltages and faster switching frequencies, leading to energy savings to deliver smaller and lighter systems across AI data centers, electric vehicles (EVs), renewable energy, and aerospace, defence and security. onsemi’s vGaN technology is designed to handle high voltages in a monolithic die – 1,200 volts and beyond – switching high currents at high frequency with superior efficiency. High end power systems built with this technology can reduce losses by almost 50% and by operating at higher frequencies can also reduce the size, including passives like capacitors and inductors by a similar amount. Additionally, compared to commercially available lateral GaN, vGaN devices are approximately three times smaller. This makes onsemi’s vGaN ideal for critical high-power applications where power density, thermal performance and reliability are paramount.	30.10.2025 16:30:00	Oct	news_2025-11-15_18.jpg	\images\news_2025-11-15_18.jpg	https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-unveils-vertical-gan-semiconductors-a-breakthrough-for-ai-and-electrification	onsemi.com
N-Channel Power MOSFETs	Toshiba Electronics Europe launches six products f...	12620	Product Release	N-Channel Power MOSFETs	Toshiba Electronics Europe launches six products featuring the DTMOSVI 600V series of N-channel power MOSFET chips, mounted in a 4-pin TO-247-4L(X) package. These TKxxxZ60Z1 devices are designed to significantly reduce switching loss. They are suitable for a range of applications, including servers in data centres, SMPS for industrial equipment, and power conditioners for photovoltaic generators. The DTMOSVI 600V series, featured in these products, has been engineered with an optimised gate design and process. This optimisation has resulted in a reduction of the drain-source on-resistance per unit area by approximately 13 %. Furthermore, the crucial figure of merit (FOM) for MOSFET performance, R<sub>DS(ON)</sub> × gate-drain charge (Q<sub>gd</sub>), has been reduced by approximately 52 % compared to Toshiba’s previous generation DTMOSIV-H series products with the same 600 V drain-source voltage (V<sub>DS</sub>) ratings. For example, the TK024Z60Z1 has a typical R<sub>DS(ON)</sub> of 20 mΩ and Q<sub>gd</sub> of 37 nC. This translates into a better trade-off between conduction loss and switching loss, directly contributing to the efficiency of switched-mode power supplies. These products incorporate a four-pin TO-247-4L(X) package, which includes a dedicated signal source terminal for the gate drive. However, it is important to note that the TO-247-4L(X) package has a different appearance and dimensions compared to Toshiba’s existing four-pin TO-247-4L package, as it features the cavity between the drain and source pins to increase creepage distance.	30.10.2025 15:30:00	Oct	news_2025-11-15_17.jpg	\images\news_2025-11-15_17.jpg	https://toshiba.semicon-storage.com/eu/company/news/2025/10/mosfet-20251030-1.html	toshiba.semicon-storage.com
APEC 2026 Early Bird Registration Now Open	The registration for APEC 2026, which will take in...	12591	Event News	APEC 2026 Early Bird Registration Now Open	The registration for APEC 2026, which will take in San Antonio, Texas (USA) on March 22-26, 2026, is now open. The IEEE Applied Power Electronics Conference and Exposition (APEC) offers a wide range of educational and social activities. APEC attendees can choose the registration category that best fits their needs and interests. Early bird registration will close on January 26, 2026.	30.10.2025 13:00:00	Oct	news_2025-11-01_8.jpg	\images\news_2025-11-01_8.jpg	https://apec-conf.org/attendees/registration/	apec-conf.org
650 V Super Junction TOLL Package Products with Integrated Kelvin Source	Magnachip Semiconductor released two 650 V Super J...	12615	Product Release	650 V Super Junction TOLL Package Products with Integrated Kelvin Source	Magnachip Semiconductor released two 650 V Super Junction MOSFET (SJ MOSFET) products, adopting the TO-Leadless (TOLL) package, that are designed to meet the high-power and high-current requirements of premium consumer electronics such as premium TVs, gaming monitors, AI laptop adaptors and chargers. Current Magnachip products with TOLL packaging, such as the 80 V – 200 V eXtreme Trench MOSFETs, use a 3-pin configuration. The 650 V SJ MOSFETs have a 4-pin Kelvin configuration, which minimizes the effects of parasitic inductance on the gate-source return path, thereby improving switching stability and overall power efficiency by reducing gate oscillation (ringing). Compared to a conventional D²PAK package, the 4-pin TOLL package delivers more than a 100 % increase in current capability, a 24 % reduction in footprint and a 48 % reduction in height. Therefore, the 4-pin TOLL package is suitable for smaller PCB and high-power density applications, which demand high power efficiency and effective heat dissipation performance. For example, the MMTB65R099RFRH device suited for a drain-source voltage of 650 V operates with a maximum R<sub>DS(on)</sub> of 99 mΩ.	30.10.2025 10:30:00	Oct	news_2025-11-15_12.jpg	\images\news_2025-11-15_12.jpg	https://www.magnachip.com/magnachip-launches-650v-super-junction-toll-package-products-with-integrated-kelvin-source/	magnachip.com
Vertical GaN Architecture built on GaN-on-GaN Technology	onsemi has introduced vertical gallium nitride (vG...	12584	Industry News	Vertical GaN Architecture built on GaN-on-GaN Technology	onsemi has introduced vertical gallium nitride (vGaN) power semiconductors. These next-generation GaN-on-GaN devices conduct current vertically through the compound semiconductor, enabling higher operating voltages and faster switching frequencies, leading to energy savings to deliver smaller and lighter systems across AI data centers, electric vehicles (EVs), renewable energy, and aerospace, defence and security. Developed and manufactured at onsemi’s fab in Syracuse, NY, onsemi holds over 130 global patents covering a range of fundamental process, device design, manufacturing and systems innovations for vertical GaN technology. onsemi’s vGaN technology is designed to handle high voltages in a monolithic die – 1,200 volts and beyond – switching high currents at high frequency with superior efficiency. High end power systems built with this technology can reduce losses by almost 50% and by operating at higher frequencies can also reduce the size, including passives like capacitors and inductors by a similar amount. Additionally, compared to commercially available lateral GaN, vGaN devices are approximately three times smaller. This makes onsemi’s vGaN ideal for critical high-power applications where power density, thermal performance and reliability are paramount.	30.10.2025 06:00:00	Oct	news_2025-11-01_1.jpg	\images\news_2025-11-01_1.jpg	https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-unveils-vertical-gan-semiconductors-a-breakthrough-for-ai-and-electrification	onsemi.com
Company Acquisition	Littlefuse announced a definitive agreement to acq...	12607	Industry News	Company Acquisition	Littlefuse announced a definitive agreement to acquire Basler Electric Company for a cash consideration of approximately $350M, subject to customary adjustments. Basler is a designer and manufacturer of electrical control and protection solutions for industrial markets including grid and utility infrastructure, power generation and data center. With three manufacturing facilities in Highland, IL/USA, Taylor, TX/USA and Piedras Negras, Mexico, Basler’s technologies regulate and protect mission-critical equipment.	28.10.2025 09:00:00	Oct	news_2025-11-15_4.png	\images\news_2025-11-15_4.png	https://investor.littelfuse.com/news/news-details/2025/Littelfuse-to-Acquire-Basler-Electric-Enhancing-High-Growth-Industrial-Market-Positioning/default.aspx	littelfuse.com
Reed Relais switches up to 80 W	Pickering Electronics has upgraded its Series 144 ...	12613	Product Release	Reed Relais switches up to 80 W	Pickering Electronics has upgraded its Series 144 high power reed relays switching up to 80 W while stacking on a 0.25-inch pitch to include a new variant with an electrostatic shield between the switch and the coil to help minimize noise. Electrostatic screening protects against noise that can otherwise occur between the coil drive and high voltage circuits. This new screening option is in addition to Pickering’s internal mu-metal screen, which helps eliminate problems that would otherwise be experienced due to magnetic interaction when devices are closely stacked. Miniature, ultra-high packing density reed relays usually have a switching rating of up to 10 W and 0.5 A, but some applications demand higher switching power and higher carry current specifications. Suitable applications for the Series 144 include mixed signal semiconductor testers, photovoltaic and EV charging, mining gas analysis, medical electronics, in-circuit test equipment, and high voltage instrumentation. As dry reed relays, Series 144 offers an eco-friendlier option than mercury-wetted reed relays. For many applications, it also provides a superior alternative to electromechanical relays (EMRs), where its low-level performance and high isolation significantly improve efficiency and reliability. And compared to EMRs, reed relays deliver faster switching speeds and longer mechanical lifespans. 1 Form A, 2 Form A and 1 Form B configurations are available, with 5 V, 12 V or 24 V coils offered, all with optional internal diode protection. Additional build options are also available on request, including many pin configurations.	28.10.2025 08:30:00	Oct	news_2025-11-15_10.png	\images\news_2025-11-15_10.png	https://www.pickeringrelay.com/eliminate-noise-in-dense-high-power-designs-with-pickerings-new-electrostatic-shielding/	pickeringrelay.com
Report: Graphene in electronic Applications	Graphene was initially celebrated as a sci-fi mate...	12609	Industry News	Report: Graphene in electronic Applications	Graphene was initially celebrated as a sci-fi material destined to transform electronics, quantum devices, and futuristic sensors. While expectations soared, commercial reality proved more modest. Rather than enabling transparent phones or levitating trains, graphene first succeeded in practical roles such as enhancing polymer composites in tires, coatings, and sporting goods through improved strength and conductivity. Now, with advances in manufacturing and renewed interest from major electronics and energy companies, the question resurfaces: are we finally approaching the breakthrough era once promised? IDTechEx has now released a report, dubbed "Graphene & 2D Materials 2026-2036: Technologies, Markets, Players", which includes granular 10-year graphene market forecasts, based on profiles of 90+ key players and leverages extensive coverage of many end-use markets for graphene. Graphene is increasingly used in consumer electronics for thermal management, leveraging its exceptional heat conductivity to improve device cooling and reliability. Beyond passive materials, its high surface area and conductivity also make it a strong candidate for energy storage applications, particularly in next-generation batteries and supercapacitors, where faster charging and longer lifetimes are sought. IDTechEx believes that thermal management applications is a key early area for graphene adoption. There is increasing demand for high-performance heat spreaders, and the graphene properties and morphology are well-suited. The thermal conductivity of carbon materials tend to be higher than that seen in metals, with graphene oxide (GO) reporting a thermal conductivity in excess of 3,000 W/m·K.	27.10.2025 11:00:00	Oct	news_2025-11-15_6.png	\images\news_2025-11-15_6.png	https://www.idtechex.com/en/research-report/graphene-and-2d-materials/1121	idtechex.com
Ruggedized 6 W DC/DC Converters with 8:1 Inputs	The TEC 6UI series from TRACO power comprises isol...	12617	Product Release	Ruggedized 6 W DC/DC Converters with 8:1 Inputs	The TEC 6UI series from TRACO power comprises isolated DC/DC converters featuring an 8:1 input range. These converters are engineered to seamlessly replace and serve as an alternative to existing 2:1 and 4:1 input converter series. With an input voltage range of 9 to 75 V<sub>DC</sub>, the TEC 6UI supports a broad spectrum of standard bus voltages, reducing the need for multiple model variants within a single application. Each model includes built-in protection such as short circuit protection, overcurrent limitation, undervoltage lockout, and remote-control functionality. The converters are certified for an operating temperature range of -40 °C to +80 °C in accordance with IEC/EN/UL 62368-1 and are capable of functioning at altitudes up to 5000 m. Housed in a SIP-8 plastic case, the TEC 6UI series is well-suited for space-constrained applications. Available in both single and dual output configurations with an I/O isolation of 1600 V<sub>DC</sub>, these converters are suited for a wide range of industrial applications.	24.10.2025 12:30:00	Oct	news_2025-11-15_14.jpg	\images\news_2025-11-15_14.jpg	https://www.tracopower.com/de/deu/tec6ui	tracopower.com
10 MHz TMR Current Sensor for Protection and Control of Wide Bandgap Power Electronics	Allegro MicroSystems introduced "the industry’s fi...	12595	Product Release	10 MHz TMR Current Sensor for Protection and Control of Wide Bandgap Power Electronics	Allegro MicroSystems introduced "the industry’s first commercially available magnetic current sensor to achieve 10 MHz bandwidth featuring Allegro’s advanced XtremeSense™ TMR (tunneling magnetoresistance) technology". The ACS37100 TMR current sensor helps power system designers master the control signal chain and unlock the full potential of fast-switching GaN and SiC FETs. Tailored to the needs of electric vehicles (xEVs), clean energy power conversion systems, and AI data center power supplies, the automotive grade ACS37100 achieves a 50 ns response time, providing the high-fidelity data needed for optimal efficiency and protection in demanding high-frequency applications. At sub-megahertz frequencies, conventional magnetic current sensors lack the speed and precision to provide the high-fidelity, real-time data required for stable control and protection loops. This can leave advanced systems vulnerable to damage and may prevent them from operating at their full potential. The ACS37100 is engineered to solve this control challenge. The device delivers a noise of 26 mA<sub>RMS</sub> across the full 10 MHz bandwidth. Integrated reinforced isolation is 5 kV for 60 seconds per UL 62368-1 while the internal conductor resistance is specified with 1.2 mΩ.	21.10.2025 07:30:00	Oct	news_2025-11-01_12.png	\images\news_2025-11-01_12.png	https://www.allegromicro.com/en/about-allegro/newsroom/press-releases/2025/industrys-first-production-ready-10-mhz-tmr-current-sensor	allegromicro.com
Bosch Global Supplier Award	Isabellenhütte has received a Bosch Global Supplie...	12593	Industry News	Bosch Global Supplier Award	Isabellenhütte has received a Bosch Global Supplier Award and thus ranks globally among the best suppliers of Bosch, the supplier of technology and services. Isabellenhütte received the award in the category "Materials and components". From its roughly 35,000 suppliers, Bosch singled out 49 suppliers from 14 countries for an award. This is the 19th time that the Bosch Group has rewarded outstanding performance by its suppliers – notably as concerns quality, costs, sustainability, and innovation. "This special award recognizes Isabellenhütte as an important development partner for Bosch and is a great tribute to all employees who work daily to continuously improve our processes and the quality of our products. We will continue to focus our strategic orientation on customer orientation and innovation as well as absolute reliability and competitiveness," emphasizes Thilo Gleisberg, CTO at Isabellenhütte.	17.10.2025 15:00:00	Oct	news_2025-11-01_10.jpg	\images\news_2025-11-01_10.jpg	https://www.isabellenhuette.com/news/bosch-global-supplier-award-2025	isabellenhuette.com
Reflow-suitable Package for SiC Devices in High-Power Applications	High-power applications such as electric vehicle c...	12612	Product Release	Reflow-suitable Package for SiC Devices in High-Power Applications	High-power applications such as electric vehicle charging, battery energy storage systems, and commercial, construction and agricultural vehicles (CAVs) are driving the demand for higher system-level power density and efficiency to meet increasing performance expectations. At the same time, these requirements introduce new design challenges, including reliable operation under harsh environmental conditions, robustness against transient overloads, and optimized overall system performance. To address these challenges, Infineon Technologies has launched the CoolSiC™ MOSFETs 1400 V G2 in the TO-247PLUS-4 Reflow package. The devices support higher DC-link voltages and enable improved thermal performance, reduced system size and enhanced reliability. The package technology supports reflow soldering at 260 °C for up to three cycles and enables reliable operation with junction temperatures up to 200 °C. This 1400 V voltage class provides additional margin for faster switching and simplifies protection measures against overvoltage. This eliminates the need for power derating and contributes to overall system robustness. The CoolSiC MOSFETs 1400 V G2 in the TO-247PLUS-4 Reflow package are available in R<sub>DS(on)</sub> classes from 6 to 29 mΩ and suitable for applications where high power density is crucial. Infineon also offers CoolSiC MOSFETs 1400 V in a TO-247-4 package with high creepage. R<sub>DS(on)</sub> classes for this portfolio range from 11 to 38 mΩ.	17.10.2025 07:30:00	Oct	news_2025-11-15_9.jpg	\images\news_2025-11-15_9.jpg	https://www.infineon.com/market-news/2025/INFGIP202510-010	infineon.com
Common Mode Choke for Power Line Noise Attenuation	Bourns released its Model SRF1709 Common Mode Chok...	12619	Product Release	Common Mode Choke for Power Line Noise Attenuation	Bourns released its Model SRF1709 Common Mode Choke, featuring a ferrite toroid core for low radiation making it an effective power line noise attenuation solution. This choke provides an inductance of 3.5 mH with a current rating of 2.5 A and an operating temperature range from –40 °C to +85 °C. It is designed to provide effective EMI suppression from both incoming and outgoing paths within the system, making suitable for consumer, industrial and other electronic application designs.	15.10.2025 14:30:00	Oct	news_2025-11-15_16.jpg	\images\news_2025-11-15_16.jpg	https://www.bourns.com/news/press-releases/pr/2025/10/15/bourns-releases-high-inductance-common-mode-choke-as-effective-power-line-noise-attenuation-solution	bourns.com
Long-term Contract for green Electricity Supply	Infineon Technologies has concluded Power Purchase...	12588	Industry News	Long-term Contract for green Electricity Supply	Infineon Technologies has concluded Power Purchase Agreements (PPA) with PNE and Statkraft for green electricity. Over the next ten years, Infineon will purchase green electricity from PNE AG’s Schlenzer and Kittlitz III wind farms in Brandenburg in Germany to supply its sites in Dresden, Regensburg, Warstein and Neubiberg near Munich. Seven turbines in the PNE AG wind farms offer a total capacity of 24 MW and a contracted electricity volume of 550 GWh. Statkraft will additionally supply German locations with renewable electricity from solar parks in Spain with a total volume of 220 GWh over the next five years. Infineon aims to switch its global operations to 100 % green electricity this year and become CO<sub>2</sub>-neutral for Scope 1 and 2 emissions by 2030. Infineon has been using green electricity in Germany and Europe since the 2021 fiscal year. By concluding Power Purchase Agreements for specific wind and solar power plants in Brandenburg and Spain, the company is now securing its long-term green electricity requirements and supporting the expansion of renewable energies.	15.10.2025 10:00:00	Oct	news_2025-11-01_5.jpg	\images\news_2025-11-01_5.jpg	https://www.infineon.com/press-release/2025/INFXX202510-006	infineon.com
100 V automotive-qualified Transistors	Infineon launched the CoolGaN™ automotive tr...	12597	Product Release	100 V automotive-qualified Transistors	Infineon launched the CoolGaN™ automotive transistor 100 V G1 family for production and has started supplying samples of its pre-production product range qualified for automotive applications in accordance with AEC-Q101, including high-voltage (HV) CoolGaN automotive transistors and bidirectional switches. Particularly with the shift from 12 V to 48 V systems in software-defined vehicles, GaN- based power conversion systems allow for improved performance but also enable advanced features such as steer-by-wire and real-time chassis control, improving ride comfort and handling. Infineon’s family of 100 V CoolGaN transistors can be used for applications such as zone control & main DC/DC converters, high-performance auxiliary systems, and Class D Audio amplifiers.	15.10.2025 09:30:00	Oct	news_2025-11-01_14.jpg	\images\news_2025-11-01_14.jpg	https://www.infineon.com/market-news/2025/INFPSS202510-007	infineon.com
Vertical GaN Sample Prototypes – already in 2025!	Vertical Semiconductor (Vertical), a semiconductor...	12606	Industry News	Vertical GaN Sample Prototypes – already in 2025!	Vertical Semiconductor (Vertical), a semiconductor company spun out of the Massachusetts Institute of Technology (MIT), received $11 million in seed funding led by Playground Global to help accelerate development of vertical GaN transistors. Additional investors include JIMCO Technology Fund, milemark•capital, and Shin-Etsu Chemical. The company’s technology is said to reduce energy loss, cut heat, and simplify infrastructure, improving efficiency by up to 30% and enabling a 50% smaller power footprint in AI data center racks. Vertical Semiconductor has demonstrated its vertical GaN technology on 8-inch wafers using standard silicon CMOS semiconductor manufacturing methods, enabling seamless integration with existing process technology and making it ready for real-world deployment for devices from 100 V to 1.2 kV. With a prototype in development and commercial milestones ahead, the company plans to start early sampling for its first prototype packaged devices by the end of the year and a fully integrated solution in 2026.	15.10.2025 08:00:00	Oct	news_2025-11-15_3.png	\images\news_2025-11-15_3.png	https://www.verticalsemi.com/news/vertical-semiconductor-raises-11-million-to-deliver-the-next-wave-of-power-for-ai-chips-and-data-centers	verticalsemi.com
Digital Power Joint Lab	GigaDevice has launched a Digital Power Joint Lab ...	12585	Industry News	Digital Power Joint Lab	GigaDevice has launched a Digital Power Joint Lab in collaboration with Navitas Semiconductor. By combining GigaDevice’s GD32MCU expertise with Navitas’ advantages in high-frequency, high-speed, and highly integrated GaN technologies, and its GeneSiC™ technology leveraging ‘trench-assisted planar’ technology, the collaboration aims to deliver intelligent and high-efficiency digital power solutions for emerging markets such as AI data centers, photovoltaic inverters, energy storage systems, charging infrastructure, and electric vehicles. Before its official launch, the lab achieved several important technological milestones, including 4.5 kW and 12 kW server power supply solutions and a 500 W single-stage PV micro-inverter. The lab will focus on developing comprehensive system-level reference designs and application-specific solutions to enable smarter, greener, and more energy-efficient power systems across data centers, renewable energy, and electric mobility.	15.10.2025 07:00:00	Oct	news_2025-11-01_2.jpg	\images\news_2025-11-01_2.jpg	https://www.gigadevice.com/about/news-and-event/news/gigadevice-and-navitas-unveil-digital-power-joint-lab	gigadevice.com
Gate Driver simplifies SiC and IGBT Designs	Littelfuse released the IX4352NEAU automotive-qual...	12598	Product Release	Gate Driver simplifies SiC and IGBT Designs	Littelfuse released the IX4352NEAU automotive-qualified low-side gate driver designed to meet the growing demands of SiC MOSFET and IGBT control in electric vehicle (EV) powertrain and DC/DC converter applications. According to the company the IX4352NEAU is "the first AEC-Q100-qualified low-side gate driver to offer an integrated and adjustable negative gate drive bias, eliminating the need for an external negative voltage rail or the costly DC/DC converters typically required to suppress parasitic turn-on of high-speed power devices". It offers an adjustable negative gate drive bias (down to -10 V) which Improves dv/dt immunity, suppresses parasitic turn-on, and ensures faster turn-off of SiC MOSFETs and IGBTs. Furthermore, it offers 9 A peak source and sink drive capability (separate pins), integrated protections and 3.3 V TTL/CMOS-compatible inputs. The devices are AEC-Q100 qualified.	14.10.2025 10:30:00	Oct	news_2025-11-01_15.jpg	\images\news_2025-11-01_15.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/new-littelfuse-gate-driver-simplifies-sic-and-igbt-designs-with-integrated-adjustable-negative-bias	littelfuse.com
Web-Based Tools for Power Design	Analog Devices launched ADI Power Studio, a compre...	12586	Industry News	Web-Based Tools for Power Design	Analog Devices launched ADI Power Studio, a comprehensive family of products that offers modeling, component recommendations and efficiency analysis with simulation. In addition, ADI is introducing two web-based tools with a modernized user experience under the Power Studio umbrella: ADI Power Studio Planner and ADI Power Studio Designer. These new tools, together with the full ADI Power Studio portfolio, including LTspice®, SIMPLIS®, LTpowerCAD®, LTpowerPlanner®, EE-Sim®, LTpowerPlay® and LTpowerAnalyzer™, streamline the entire power system design process. The Power Studio tools support engineers from initial concept through measurement and evaluation, empowering engineers to design with confidence and efficiency. ADI Power Studio Planner is a web-based tool for system-level power tree planning, which gives engineers an interactive view of their system architecture. ADI Power Studio Designer is also a web-based tool, however, for IC-level power supply design. It provides component recommendations, performance estimates, and tailored efficiency analysis. These tools represent the first phase of ADI’s vision to deliver a fully connected power design workflow for customers.	14.10.2025 08:00:00	Oct	news_2025-11-01_3.png	\images\news_2025-11-01_3.png	https://www.analog.com/en/newsroom/press-releases/2025/10-14-2025-adi-launches-adi-power-studio-new-web-based-tools.html	analog.com
GaN Partnership	Cambridge GaN Devices (CGD), a fabless semiconduct...	12592	Industry News	GaN Partnership	Cambridge GaN Devices (CGD), a fabless semiconductor company, is working with GlobalFoundries (GF), a semiconductor manufacturer. The partnership follows CGD’s fabless strategy, expanding the supply chain for the company’s ICeGaN® power devices. CGD’s single-chip technology runs with standard Si MOSFET drivers and is built using a standard Si CMOS wafer fab process. This means that there is no need for a specialist process in the wafer fab. ICeGaN IP is design rather than process-based so is fab agnostic meaning it is easily transferrable to new foundries. Furthermore, the CGD design flow has been built on years of experience in GaN technology and enables fab process porting through a proven methodology. Advanced machine learning algorithms are applied to proprietary test chip characterisation data to refine the models.	13.10.2025 14:00:00	Oct	news_2025-11-01_9.jpg	\images\news_2025-11-01_9.jpg	https://camgandevices.com/en/p/cgd-partners-with-globalfoundries-to-supply-single-chip-reliable-and-efficient-icegan-power-devices/	camgandevices.com
1700 V GaN Technology for Next-Generation 800 V_DC AI Data Centers	Power Integrations outlined the benefits of its Po...	12601	Product Release	1700 V GaN Technology for Next-Generation 800 V<sub>DC</sub> AI Data Centers	Power Integrations outlined the benefits of its PowiGaN™ gallium-nitride technology for next-generation AI data centers. The capabilities of 1250 V and 1700 V PowiGaN technology for 800 V<sub>DC</sub> power architectures are explained in a white paper. This paper details the performance advantages of Power Integrations’ 1250 V PowiGaN HEMTs, illustrating their field-proven reliability and their ability to meet the power-density and efficiency requirements (>98 %) of the 800 V<sub>DC</sub> architecture. Further, the paper demonstrates that a single 1250 V PowiGaN switch delivers greater power density and efficiency compared to stacked 650 V GaN FETs and competing 1200 V SiC devices.	13.10.2025 13:30:00	Oct	news_2025-11-01_18.jpg	\images\news_2025-11-01_18.jpg	https://investors.power.com/news/news-details/2025/Power-Integrations-Details-1250-V-and-1700-V-PowiGaN-Technology-for-Next-Generation-800-VDC-AI-Data-Centers/default.aspx	power.com
800 V Direct Current AI Data Center Power Architecture with GaN Devices	Renesas Electronics supports efficient power conve...	12600	Product Release	800 V Direct Current AI Data Center Power Architecture with GaN Devices	Renesas Electronics supports efficient power conversion and distribution for the 800 V Direct Current power architecture announced by NVIDIA. Renesas’ GaN based power solutions are especially suited for the task, supporting dense DC/DC power conversion with operating voltages of 48 V to as high as 400 V, with the option to stack up to 800 V. Based on the LLC Direct Current Transformer (LLC DCX) topology, these converters achieve up to 98 percent efficiency. For the AC/DC front-end, Renesas uses bi-directional GaN switches to simplify rectifier designs and increase power density. Renesas REXFET MOSFETs, drivers and controllers complement the BOM of the DC/DC converters.	13.10.2025 12:30:00	Oct	news_2025-11-01_17.jpg	\images\news_2025-11-01_17.jpg	https://www.renesas.com/en/about/newsroom/renesas-powers-800-volt-direct-current-ai-data-center-architecture-next-generation-power	renesas.com
White Paper on Power Solutions for Next-Generation 800 V_DC Architecture	ROHM has released a white paper detailing power so...	12590	Industry News	White Paper on Power Solutions for Next-Generation 800 V<sub>DC</sub> Architecture	ROHM has released a white paper detailing power solutions for AI data centers based on the 800 V<sub>DC</sub> architecture. The paper outlines power strategies that support large-scale 800 V<sub>DC</sub> power distribution across AI infrastructure. Included in the white paper are ROHM’s power solutions, supported by thermal design simulations, board-level design strategies, and real-world implementation examples. Key highlights of the white paper are rising rack power consumption, the shift to 800 V<sub>DC</sub>, the redefined power conversion, the essential role of SiC and GaN, optimized conversion topologies as well as breakthrough device technologies.	13.10.2025 12:00:00	Oct	news_2025-11-01_7.jpg	\images\news_2025-11-01_7.jpg	https://www.rohm.com/news-detail?news-title=2025-10-14_news_white-paper&defaultGroupId=false	rohm.com
Power-Management Solutions for scalable AI Infrastructures	Texas Instruments (TI) debuted design resources an...	12599	Product Release	Power-Management Solutions for scalable AI Infrastructures	Texas Instruments (TI) debuted design resources and power-management chips to help companies meet growing artificial intelligence (AI) computing demands and scale power-management architectures from 12 V to 48 V to 800 V<sub>DC</sub>. A typical example is a reference design for a 30 kW AI server power-supply unit featuring a three-phase, three-level flying capacitor power factor correction converter paired with dual delta-delta three-phase inductor-inductor-capacitor converters. Another example is a Gallium-nitride intermediate bus converter capable of delivering up to 1. 6kW of output power in a quarter-brick (58.4 mm by 36.8 mm) form factor based on TI’s LMM104RM0 converter module offering over 97.5 % input-to-output power-conversion efficiency and the possibility for active current sharing between multiple modules.	13.10.2025 11:30:00	Oct	news_2025-11-01_16.jpg	\images\news_2025-11-01_16.jpg	https://www.ti.com/about-ti/newsroom/news-releases/2025/tis-new-power-management-solutions-enable-scalable-ai-infrastructures.html	ti.com
800 V_DC Power Architecture for AI Data Centers	To address the challenge that future AI factory da...	12594	Product Release	800 V<sub>DC</sub> Power Architecture for AI Data Centers	To address the challenge that future AI factory data centers will require megawatt-scale rack power delivery systems, EPC has developed a low-profile GaN-based, 6 kW 800 V-to-12.5 V converter based on an Input Series Output Parallel (ISOP) topology. This solution provides a higher power density than previous solutions as it occupies under 5,000 mm² and 8 mm in height, making it well-suited for space-constrained AI boards.It efficiently converts 800 V<sub>DC</sub> to 12.5 V<sub>DC</sub> close to the load, reducing bussing losses and improving system-level efficiency. By moving from AC directly to 800 V<sub>DC</sub> at the rack level, and then stepping down to 12.5 V at the board, EPC’s GaN-based solution eliminates unnecessary conversion stages and enables the scalability, simplicity, and energy optimization demanded by tomorrow’s AI data centers.	13.10.2025 06:30:00	Oct	news_2025-11-01_11.jpg	\images\news_2025-11-01_11.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3241/epc-800-vdc-power-architecture-for-ai-data-centers	epc-co.com
Devices for 800 V_DC Power Architecture	Alpha and Omega Semiconductor (AOS) announced supp...	12611	Product Release	Devices for 800 V<sub>DC</sub> Power Architecture	Alpha and Omega Semiconductor (AOS) announced support for the power requirements of the 800 V<sub>DC</sub> architecture announced by NVIDIA. The shift from traditional 54 V power distribution to an 800 V<sub>DC</sub> system is a fundamental change in data center design, aimed at overcoming the physical limits of existing infrastructure. This paradigm shift requires advanced power semiconductors, particularly Silicon Carbide (SiC) and Gallium Nitride (GaN), to handle the higher voltages and frequencies with maximum efficiency. In terms of High-Voltage Conversion AOS’ SiC devices, including the Gen3 AOM020V120X3 or topside cooled AOGT020V120X2Q, fit either the power sidecar configuration or the single-step conversion of 13.8 kV AC grid power directly to 800 V<sub>DC</sub> at the data center perimeter. This simplifies the power chain and enhances overall system efficiency. In High-Density DC/DC Conversion within the racks, AOS’ 650V GaN FETs, like the upcoming AOGT035V65GA1, and the 100 V GaN FETs like AOFG018V10GA1 provide the required density essential for converting the 800 V<sub>DC</sub> power to the lower voltages needed by GPUs. Their high-frequency switching capabilities allow for smaller, lighter converters, freeing up valuable space. Furthermore, AOS offers multi-rail 16-phase controllers for the 54 V to 12 V and further downstream conversion stages to the AI SoC.	13.10.2025 06:30:00	Oct	news_2025-11-15_8.jpg	\images\news_2025-11-15_8.jpg	https://www.aosmd.com/news/alpha-and-omega-semiconductor-supports-800-vdc-power-architecture-next-generation-ai-factories	aosmd.com
Schottky Barrier Diode combining low V_F and I_R	ROHM has developed a Schottky barrier diode that o...	12602	Product Release	Schottky Barrier Diode combining low V<sub>F</sub> and I<sub>R</sub>	ROHM has developed a Schottky barrier diode that overcomes the traditional V<sub>F</sub> / I<sub>R</sub> trade-off. This way, it delivers high reliability protection. The RBE01VYM6AFH represents the concept of leveraging the low-V<sub>F</sub> characteristics of rectification SBDs for protection purposes. By adopting a proprietary architecture, ROHM has achieved low I<sub>R</sub> that is typically difficult to realize with low V<sub>F</sub> designs. As a result, even under harsh environmental conditions, the device meets market requirements by delivering V<sub>F</sub> of less than 300 mV (at I<sub>F</sub>=7.5 mA even at Ta = -40 °C), and an I<sub>R</sub> of less than 20 mA (at V<sub>R</sub> = 3 V even at Ta = 125 °C). These exceptional characteristics not only prevent circuit damage caused by high photovoltaic voltage generated when powered OFF, but also significantly reduce the risk of thermal runaway and malfunction during operation. The AEC-Q101 qualified diode is housed in a compact flat-lead SOD-323HE package (2.5 mm × 1.4 mm) that offers both space efficiency and excellent mountability.	12.10.2025 14:30:00	Oct	news_2025-11-01_19.jpg	\images\news_2025-11-01_19.jpg	https://www.rohm.com/news-detail?news-title=2025-10-23_news_sbd&defaultGroupId=false	rohm.com
Supporting Wide Bandgap R&D	The Microtest Group, a manufacturer of test system...	12596	Product Release	Supporting Wide Bandgap R&D	The Microtest Group, a manufacturer of test systems and testing of chips on packages and silicon wafers, launched two turnkey platforms for power device characterization: Quasar<sup>200</sup> and Pulsar<sup>600</sup>. Developed by ipTEST, Microtest’s UK subsidiary, the two platforms are claimed to "set a new benchmark in precision testing". Quasar<sup>200</sup> and Pulsar<sup>600</sup> are designed for academic researchers and engineers developing new semiconductor products. With a plug-and-play approach, they simplify experimental workflows by eliminating the need for custom equipment and reducing manual operations such as soldering and complex test setups. This enables users to obtain accurate, publication-ready results with traceable precision. They speed up datasheet generation, facilitate correlation with production testers, and ensure safe validation of next-generation devices. Quasar<sup>200</sup> is suitable for evaluating Si, GaN, and SiC devices. Its counterpart, Pulsar<sup>600</sup>, extends these capabilities to ultra-high current applications, well-suited for testing SiC inverters and automotive systems, supporting short-circuit tests up to 1,000 A<sub>DC</sub> and more than 10,000 A<sub>AC</sub>. Both platforms offer up to ±0.1% measurement accuracy across all voltage and current waveforms, with typical parasitic inductance below 30 nH in AC tests. UKAS (United Kingdom Accreditation Service)-traceable calibration and comprehensive audit logs ensure reliability, consistency, and compliance from lab benches to production lines.	11.10.2025 08:30:00	Oct	news_2025-11-01_13.jpg	\images\news_2025-11-01_13.jpg	https://www.microtest.net/the-microtest-group-simplifies-wbg-semiconductor-testing-for-labs-and-engineers-introducing-the-plug-and-play-quasar200-and-pulsar600/	microtest.net
DC Power Analyzer	The IT2705 DC Power Analyzer is a highly integrate...	12583	Product Release	DC Power Analyzer	The IT2705 DC Power Analyzer is a highly integrated modular DC power analyzer designed for dynamic power consumption measurement, battery simulation, and power characterization. It combines DC power, electronic loads and arbitrary waveform generator with an intuitive GUI, supports Oscilloscope Sampling and Data Logging function, allowing for the creation of complex testing without the need for secondary development. Four current ranges with seamless auto-ranging enable accurate analysis of transient current changes from low-power sleep mode to active operation. Oscilloscope sampling rate up to 200 kHz ensures precise capture of microsecond-level parameter variations. It can be applied for testing IoT devices, chips, automotive electronics, smart wearable devices,etc, helping engineers deeply analyze dynamic waveforms, instant responses, and key electrical characteristics, improving testing efficiency and accuracy.	10.10.2025 16:30:00	Oct	news_2025-10-15_20.png	\images\news_2025-10-15_20.png	https://www.itechate.com/en/news/IT2705.html	itechate.com
PwrSoC 2025 – Global Experts Discussed Miniaturization of Power Conversion	The 9th International Workshop on Power Supply on ...	12572	Event News	PwrSoC 2025 – Global Experts Discussed Miniaturization of Power Conversion	The 9th International Workshop on Power Supply on Chip (PwrSoC) has just concluded. Held from September 24 to 26, 2025, in Seoul, South Korea, this year’s workshop marked another significant milestone in the field of integrated power solutions. Over 213 leading researchers and industry professionals from around the world gathered to share insights and advances in the miniaturization and integration of power conversion and power management at the chip, package, and module level. The workshop featured three outstanding plenary talks from industry leaders, offering deep insights into the latest developments in miniaturized and integrated power conversion and power management technologies. Following PwrSoC’s signature single-track format, the workshop presented high-impact invited presentations and an engaging poster session. The technical program covered a wide range of topics, including Systems & Applications, Integrated Magnetics, Topologies & Control, Wide Bandgap Integration, System-Integrated Packaging & Manufacturing, Integrated Capacitors and Energy Storage, and Granular Power Supply.	10.10.2025 13:00:00	Oct	news_2025-10-15_8.jpg	\images\news_2025-10-15_8.jpg	https://pwrsocevents.com/	pwrsocevents.com
GaN Half-Bridge Gate Drivers	STMicroelectronics’ STDRIVEG210 and STDRIVEG211 ha...	12603	Product Release	GaN Half-Bridge Gate Drivers	STMicroelectronics’ STDRIVEG210 and STDRIVEG211 half-bridge gallium nitride gate drivers are tailored for systems powered from industrial or telecom bus voltages, 72 V battery systems, and 110 V AC line-powered equipment. Rated for maximum rail voltage of 220 V, the drivers integrate linear regulators to generate high-side and low-side 6 V gate signals and provide separate sink and source paths for optimum control. The STDRIVEG210 is featured for power-conversion applications such as server and telecom supplies, battery chargers, adapters, solar micro-inverters and optimizers, LED lighting, and USB-C power sources. Suitable both for resonant and hard-switching topologies, its 300 ns startup time permits to minimize the wake-up time especially during intermittent operation (burst mode). The STDRIVEG211, equipped with overcurrent detection and smart shutdown, targets motor drives in power tools, e-bikes, pumps, and servos, as well as class-D audio amplifiers, in addition to power supplies. Both devices have an integrated bootstrap diode to supply high-side drivers. The separate gate-driving paths can sink 2.4 A and source 1.0 A for fast switching transitions and dV/dt tuning. Protection features include interlocking to prevent cross conduction, while the high-side and low-side drivers have a short propagation delay with 10 ns matching time for low dead time operation. Under-voltage lockout (UVLO) prevents operating in low-efficiency or dangerous conditions and the STDRIVEG211, which is oriented towards motor-drive applications, has additional high-side UVLO protection.	09.10.2025 15:30:00	Oct	news_2025-11-01_20.jpg	\images\news_2025-11-01_20.jpg	https://community.st.com/t5/developer-news/half-bridge-gate-drivers-ease-design-with-gan-in-low-voltage/ba-p/846156	st.com
Christian Felgemacher appointed Director Application Engineering	ROHM Semiconductor is pleased to announce the appo...	12565	People	Christian Felgemacher appointed Director Application Engineering	ROHM Semiconductor is pleased to announce the appointment of Dr. Christian Felgemacher as Director Application Engineering. Since October 1st, he has been responsible for both the operational coordination of technical customer support and the strategic direction of ROHM’s application engineering activities in Europe. Since joining ROHM in 2017, Dr. Felgemacher has contributed significantly to the establishment of the Application and Technical Solution Center (ATSC) - with the set-up of the company’s Power Lab and the development of customer-oriented solutions for ROHM’s European customers. In his previous role as Senior Department Manager Application Engineering, he already led the Technical Consulting and Customer Support division with great commitment and promoted conceptual cooperation with important partners from industry and university research. His leadership role was crucial to the expansion of ROHM’s activities in the automotive, industrial, and energy sectors - particularly through initiatives related to SiC technologies and inverter development.	09.10.2025 06:00:00	Oct	news_2025-10-15_1.jpg	\images\news_2025-10-15_1.jpg	https://www.rohm.com/news-detail?news-title=2025-10-09_news&defaultGroupId=false	rohm.com
300 mm GaN Program launched	Imec welcomes AIXTRON, GlobalFoundries, KLA Corpor...	12567	Industry News	300 mm GaN Program launched	Imec welcomes AIXTRON, GlobalFoundries, KLA Corporation, Synopsys, and Veeco as first partners in its 300 mm gallium-nitride open innovation program track for low- and high-voltage power electronics applications. This program track, part of Imec’s industrial affiliation program (IIAP) on GaN power electronics, has been set up to develop 300 mm GaN epi growth, and low and high voltage GaN high electron mobility transistor (HEMT) process flows. The use of 300 mm substrates will not only reduce GaN device manufacturing costs, but it will also allow the development of more advanced power electronics devices, such as efficient low-voltage point-of-load converters for CPUs and GPUs. As part of the 300 mm GaN program, a baseline lateral p-GaN HEMT technology platform will first be established for low-voltage applications (100 V and beyond), using 300 mm Si(111) as a substrate. For this, process module work centered around p-GaN etch and Ohmic contact formation is ongoing. Later, high-voltage applications are targeted. For 650 V and above, developments will utilize 300 mm semi-spec and CMOS-compatible QST-® engineered substrates (a material with poly-crystalline AlN core). During the developments, control over the bow of the 300 mm wafers, and their mechanical strength are prime concerns. Imec expects to have full 300mm capabilities installed in its 300mm cleanroom by the end of 2025.	06.10.2025 08:00:00	Oct	news_2025-10-15_3.jpg	\images\news_2025-10-15_3.jpg	https://www.imec-int.com/en/press/imec-launches-300mm-gan-program-to-develop-power-devices	imec-int.com
40 W DC/DC Converters for demanding space-constrained Applications	XP Power launched the BCT40T series of 40 W DC/DC ...	12582	Product Release	40 W DC/DC Converters for demanding space-constrained Applications	XP Power launched the BCT40T series of 40 W DC/DC converters, housed in a 1" × 1" (25.4 mm × 25.4 mm) package designed for PCB mounting. This series is suited for industrial technology, ITE, and communications applications where space is a critical constraint; it is specifically engineered for sectors such as test & measurement, robotics, process control, analytical instruments, and communications equipment. It features a 4:1 input voltage range and operates with an efficiency of up to 89 %. Models are available with nominal 24 V<sub>DC</sub> inputs (ranging from 9.0 V to 36.0 V<sub>DC</sub>) and 48 V<sub>DC</sub> inputs (ranging from 18.0 V to 75.0 V<sub>DC</sub>). The BCT40T offers single regulated outputs ranging from 3.3 V to 24 V<sub>DC</sub>, as well as dual regulated outputs at ±12 V<sub>DC</sub> and ±15 V<sub>DC</sub>. Furthermore, the single-output models offer the flexibility of ±10% output voltage adjustment via an external trim resistor, enabling specific voltage requirements. Protection features include 2kV<sub>DC</sub> isolation between input and output, continuous short-circuit protection with auto-recovery, and overload protection typically set between 130 % and 180 %. It also incorporates overtemperature protection (at 115 °C case temperature), under-voltage lockout (UVLO), and overvoltage protection via a Zener diode clamp. The series holds worldwide safety approvals, meeting IEC/UL/EN62368-1 standards, as well as applicable CE and UKCA directives. It also complies with EN55032 Class A/B for conducted and radiated emissions, and EN61000-4-x for immunity. With a 3-year warranty, the BCT40T series stands as a reliable and high-performance solution for power delivery.	03.10.2025 15:30:00	Oct	news_2025-10-15_19.jpg	\images\news_2025-10-15_19.jpg	https://www.xppower.com/resources/press-releases/40W-compact-DC-DC-converters	xppower.com
Power Company opened its Italian Headquarters	RECOM Power Solutions (RPS), part of the RECOM Gro...	12587	Industry News	Power Company opened its Italian Headquarters	RECOM Power Solutions (RPS), part of the RECOM Group, officially celebrated the opening of its company headquarters in Mareno di Piave, Italy. The event brought together employees from around the world, customers, and representatives from politics and business to mark this milestone. The celebration embodied the company’s core values – teamwork, passion, and a shared vision. In an atmosphere filled with energy and inspiring conversations, the event marked not only the inauguration of the new site but also the beginning of another chapter in the company’s history.	02.10.2025 09:00:00	Oct	news_2025-11-01_4.jpg	\images\news_2025-11-01_4.jpg	https://recom-power.com/en/rec-n-recom-power-solutions-opens-new-headquarters-in-italy-441.html?3	recom-power.com
Innovation Day showcases technical Innovations	The dataTec Innovation Day, held on September 25 i...	12571	Industry News	Innovation Day showcases technical Innovations	The dataTec Innovation Day, held on September 25 in Stuttgart by the specialist distributor, brought together 216 participants who experienced the latest innovations in test and measurement technology. The event’s name spoke for itself: the selected partner companies presented cutting-edge solutions that set new standards. The dataTec Innovation Day agenda featured live demonstrations, expert talks, and workshops on four key areas: EMPT (Electronic Measurement and Testing Technology), Power (AC/DC power supplies & data loggers), High-End Measurement Technology, and Modular Measurement Technology. Ample networking opportunities rounded off the event. Markus Kohler, Chief Sales Officer of dataTec, emphasized the responsibility of distribution partners in the field of measurement and testing technology. "We are observing three major developments: the increasing automation of measurement and testing tasks, the growing use of artificial intelligence in evaluation, and a clear trend toward more efficient and sustainable solutions. As a specialized distributor with 40 years of experience, our mission is to provide engineers and technicians with the right tools, and to offer practical support through consulting, application expertise, and dedicated service."	01.10.2025 12:00:00	Oct	news_2025-10-15_7.jpg	\images\news_2025-10-15_7.jpg	https://www.datatec.eu/de/en/wiki/first-datatec-innovation-day-showcases-technical-innovations	datatec.eu
Industrial Power Supply Series now also with 600 W and 1000 W Models	TDK-Lambda has expanded its GUS series of single-o...	12579	Product Release	Industrial Power Supply Series now also with 600 W and 1000 W Models	TDK-Lambda has expanded its GUS series of single-output general-purpose power supplies with 600 W and 1000 W models. Designed for applications such as light industrial equipment, factory automation, semiconductor fabrication, ATE test systems, LED lighting, and broadcast, the new models provide output voltages of 12, 24, 36, and 48 V, achieving efficiencies of up to 95 % with a load of 30 to 100 %. Both units feature an internal cooling fan with an acoustic noise, which is typically less than 45 dBA. The GUS600 model measures 101.6 × 41 × 152.4 mm3 (W x H x D), while the GUS1000 has a compact package size of 101.6 × 41 × 177.8 mm3. The models feature an operating temperature range of -20 to +70 °C and the output voltage can be adjusted for non-standard system voltages while output remote on/off is available as an option. Safety certifications include IEC/EN/UL/CSA62368-1 (compliant to IEC61010-1) and carry the CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN 55011-B and EN 55032-B conducted and radiated emissions standards and meet EN 61000-3-2 harmonics and IEC 61000-4 immunity standards. The GUS series also meets IEC 62477-1 (OVC III) and has an input-to-output isolation of 2,000 V<sub>AC</sub>, input-to-ground of 3,000 V<sub>AC</sub>, and an output-to-ground of 500 V<sub>AC</sub>. The nominal input voltage is 100 – 240 V.	30.09.2025 12:30:00	Sep	news_2025-10-15_16.jpg	\images\news_2025-10-15_16.jpg	https://www.emea.lambda.tdk.com/uk/news/article/21117	lambda.tdk.com
Wide Input DC/DC Range delivers 10 W in DIP-24 Package	The REC10K-RW series of encapsulated DC/DCs conver...	12578	Product Release	Wide Input DC/DC Range delivers 10 W in DIP-24 Package	The REC10K-RW series of encapsulated DC/DCs converters recently launched by Recom features a 4:1 input range (9-36 V and 18-75 VDC) and a selection of regulated single and dual outputs covering all common requirements. A full 10 W is available up to at least 60 °C ambient, deriving to 100 °C. Output trim and ON/OFF control features are included. Isolation is 4 kVDC for 1 minute (functional), and the parts are safety-certified to IEC/EN/UL/CSA62368-1. Full protection against input under-voltage, over-temperature, and output short-circuits, over-current, and over-voltage are included.	30.09.2025 11:30:00	Sep	news_2025-10-15_15.jpg	\images\news_2025-10-15_15.jpg	https://recom-power.com/en/rec-n-wide-input-dc!sdc-range-delivers-10w-in-dip24-package-438.html?5	recom-power.com
Application-specific MOSFETs provide enhanced dynamic Current Sharing	Nexperia has added some devices to its family of a...	12576	Product Release	Application-specific MOSFETs provide enhanced dynamic Current Sharing	Nexperia has added some devices to its family of application-specific MOSFETs (ASFETs), whose features have been tuned to meet the exacting requirements of specific end applications. The 80 V PSMN1R9-80SSJ and 100 V PSMN2R3-100SSJ switches have been designed to provide enhanced dynamic current sharing in high-power 48 V applications that require the use of several closely matched MOSFETs connected in parallel. These include motor drive in electric vehicles like forklifts, e-scooters and mobility devices, as well as high-power industrial motors. When connecting two or more MOSFETs in parallel to support high current capability and reduce conduction losses, it can be challenging for designers to ensure the load current is shared equally between individual devices during turn-on and turn-off. MOSFETs with the lowest V<sub>GS(th)</sub> will turn on first, causing higher thermal stress resulting in accelerated failure. In order to provide a sufficient safety margin, engineers often over-specify the MOSFETs used in their end applications. PSMN1R9-80SSJ and PSMN2R3-100SSJ ASFETs offer a 50 % lower current delta between parallel devices (for currents up to 50 A per device) at turn-on/off and also offer a V<sub>GS(th)</sub> window that is up to 50 % lower (0.6 V min-to-max). Combined with the R<sub>DS(on)</sub> of 1.9 mΩ or 2.3 mΩ this helps to provide high efficiency in power switching applications. These ASFET devices are available in the rugged, space-efficient 8 mm × 8 mm copper-clip LFPAK88 package, delivering operating temperature ranging from -55 °C to +175 °C.	30.09.2025 09:30:00	Sep	news_2025-10-15_13.jpg	\images\news_2025-10-15_13.jpg	https://www.nexperia.com/about/news-events/press-releases/nexperia-application-specific-mosfets-provide-enhanced-dynamic-current-sharing-for-high-power-industrial-applications	nexperia.com
Passive Components: Plant Opening in China	Isabellenhütte Heusler has opened its first plant ...	12568	Industry News	Passive Components: Plant Opening in China	Isabellenhütte Heusler has opened its first plant in China – in Jintan (Changzhou). The company hosted a grand opening ceremony attended by key stakeholders, including customers, suppliers, service providers, local authorities, and political representatives. Dr. Gero Heusler, member of the advisory board, and the management team – represented by Thilo Gleisberg (CTO) and Dr. Felix Heusler (CFO) – also attended the event and emphasized the strategic importance of the new location for the company’s international orientation. With an investment of approximately 18 million Euros and more than 7,000 m² of production space on three levels, the family-owned company is consistently expanding its presence in the world’s most important industrial and electronics market. The facility targets LEED Silver certification and will operate entirely on renewable electricity. Isabellenhütte has been known for precision and quality since 1482 - today for its precision and power resistors, current measurement systems, and high-quality alloys. From the outset, the plant has focused on efficient, resource-saving processes and building local expertise. Once in regular operation, over 100 skilled jobs will be created; the first 25 employees have already started work. There are also plans to collaborate with universities and research institutions in the region.	29.09.2025 09:00:00	Sep	news_2025-10-15_4.jpg	\images\news_2025-10-15_4.jpg	https://www.isabellenhuette.com/news/factory-opening-china	isabellenhuette.com
Tailored for Industrial Switching Applications	Infineon Technologies launched the OptiMOS™ ...	12574	Product Release	Tailored for Industrial Switching Applications	Infineon Technologies launched the OptiMOS™ 7 power MOSFET family for industrial and consumer markets, extending the already existing OptiMOS 7 automotive portfolio. Now there are products specifically for high performance switching, motor-drives, or R<sub>DS(ON)</sub>-focused applications. The OptiMOS 7 25 V MOSFETs go beyond the one-size-fits-all approach, offering devices tailored to switching applications. The product variant targets applications such as intermediate bus converters (IBCs) with various topologies used in 48 V conversion for power AI cores, as well as switched-mode power supplies in telecommunications and traditional server applications. There are two technology variants: devices optimized for hard-switching and soft-switching topologies. Compared to the OptiMOS 5 25 V, the new generation achieves up to 20 percent lower R<sub>DS(ON)</sub> and up to 25 percent better FOMs, depending on the optimization type. The OptiMOS 7 25 V devices, optimized for switching, are available in source-down PQFN 3.3×3.3 packages with bottom and dual-side cooling variants in a center-gate footprint while the OptiMOS 7 40 V motor-drives optimized family includes SuperSO8 (5x6) and PQFN 3.3×3.3 packages.	26.09.2025 07:30:00	Sep	news_2025-10-15_11.png	\images\news_2025-10-15_11.png	https://www.infineon.com/market-news/2025/INFPSS202509-150	infineon.com
Collaboration on SiC Power Electronics Packages to enhance Flexibility	Infineon Technologies and ROHM have signed a Memor...	12552	Industry News	Collaboration on SiC Power Electronics Packages to enhance Flexibility	Infineon Technologies and ROHM have signed a Memorandum of Understanding to collaborate on packages for silicon carbide power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both Infineon and ROHM. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs. As part of the agreement, ROHM will adopt Infineon’s top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon’s top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM’s DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247. Infineon and ROHM plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and GaN.	25.09.2025 13:00:00	Sep	news_2025-10-01_8.jpg	\images\news_2025-10-01_8.jpg	https://www.infineon.com/press-release/2025/INFXX202509-149	infineon.com
100 V N-channel power MOSFET	Toshiba Electronics has launched the TPH2R70AR5, a...	12577	Product Release	100 V N-channel power MOSFET	Toshiba Electronics has launched the TPH2R70AR5, a 100 V-rated N-channel power MOSFET fabricated in the company’s U-MOS11-H process. The MOSFET will be primarily used in switched-mode power supply (SMPS) applications, particularly high-efficiency DC/DC converters. Key application sectors will be within data centres, communications base stations, and other high-end industrial equipment. The TPH2R70AR5 offers significant performance advantages over devices manufactured with the existing U-MOSX-H process. For example, compared to the earlier TPH3R10AQM, the drain-source on-resistance (R<sub>DS(ON)</sub>) has reduced by around 8 % to 2.7 m&ohm; (max.) while the total gate charge (Q<sub>g</sub>) is now 37 % lower at 52 nC (typ.). The R<sub>DS(ON)</sub> × Q<sub>g</sub> figure-of-merit (FoM) is therefore improved by 42 %. Housed in the SOP (N) package measuring 5.15 mm × 6.1 mm, the TPH2R70AR5 is rated for a maximum drain current (I<sub>D</sub>) of 190 A at an ambient temperature of 25 °C. The device is capable of operating with a channel temperature (T<sub>ch</sub>) up to 175 °C, thereby reducing the need for cooling measures. Toshiba also offers circuit design support tools: the G0 SPICE model, which verifies circuit function in a short time, and highly accurate G2 SPICE models that accurately reproduce transient characteristics.	25.09.2025 10:30:00	Sep	news_2025-10-15_14.jpg	\images\news_2025-10-15_14.jpg	https://toshiba.semicon-storage.com/ap-en/company/news/news-topics/2025/09/mosfet-20250925-1.html	toshiba.semicon-storage.com
ASPICE Capability Level 2 for Next Generation Cell Monitoring System achieved	Dukosi has achieved Automotive SPICE® (ASPICE)...	12553	Industry News	ASPICE Capability Level 2 for Next Generation Cell Monitoring System achieved	Dukosi has achieved Automotive SPICE® (ASPICE) Capability Level 2 for development processes related to its next generation cell monitoring system for automotive and electric vehicle (xEV) applications. This important assessment milestone assures compliance with the demanding quality requirements of automotive customers and gives confidence that automotive software and systems are developed with consistent quality, reliability and safety. The intensive assessment was performed by UL Solutions in compliance with ASPICE PAM 4.0 (Process Assessment Model) and in accordance with the ISO/IEC 33002 standard and completed in September 2025. The Automotive Software Process Improvement and Capability Determination (ASPICE) standard, developed by the German Association of the Automotive Industry (VDA), has been established worldwide and is used by leading OEMs and suppliers to evaluate the development processes of software-based systems in and around the vehicle. UL Solutions’ rigorous assessment included Dukosi’s processes across system development, software development, support and project management, and the scope of this assessment went beyond the scope recommended by VDA. Reinforcing the company’s commitment to product safety, Dukosi’s development processes are in full alignment with ASPICE PAM 4.0 and ISO 26262.	23.09.2025 14:00:00	Sep	news_2025-10-01_9.png	\images\news_2025-10-01_9.png	https://www.dukosi.com/press-release/dukosi-achieves-aspice-capability-level-2-for-its-next-generation-cell-monitoring-system	dukosi.com
Entering the Semiconductor Industry	Kurtz Ersa has taken over the business operations ...	12589	Industry News	Entering the Semiconductor Industry	Kurtz Ersa has taken over the business operations of the insolvent equipment manufacturer ATV Technologie. For Kurtz Ersa, this is the strategic step into the market for production systems for the semiconductor industry that has been announced for some time. All ATV employees will be taken over. ATV will continue to do business under the name Kurtz Ersa Semicon. The company is specialized in the development and distribution of high-quality vacuum soldering systems providing precise temperature control and high homogeneity – essential for the requirements of the semiconductor and microelectronics industry. The interdisciplinary team, consisting of engineers, physicists, and specialists in precision mechanics and electrical engineering, delivers customized solutions for universities, research institutes, laboratories, and manufacturing companies.	23.09.2025 11:00:00	Sep	news_2025-11-01_6.jpg	\images\news_2025-11-01_6.jpg	https://kurtzersa.com/news/all/kurtz-ersa-enters-the-semiconductor-industry	kurtzersa.com
Dispensable Thermal Gel offers Vertical Tackiness	The Chomerics Division of Parker Hannifin introduc...	12581	Product Release	Dispensable Thermal Gel offers Vertical Tackiness	The Chomerics Division of Parker Hannifin introduced its THERM-GAP™ GEL 75VT, a dispensable thermal gel offering 7.5 W/m-K typical thermal conductivity. The fully cured product performs reliably in vertical and high-vibration applications, including those that are mission-critical. To ensure its suitability for conducting heat away from electronics to heatsinks or enclosures in demanding operating conditions, Parker Chomerics subjected GEL 75VT to several long-term reliability tests. The product passed automotive vertical slump testing, high-vibration testing and telecommunications thermal material verification processes. With its long-term reliability, THERM-GAP GEL 75VT can meet the requirements of design engineers who need their new electronic device to deliver consistent thermal performance over many years of continuous service. Automotive sensors and devices, telecommunications modules, BESS (battery and energy storage system) modules, industrial electronics, network and IT infrastructure, power electronics, and consumer electronics are all among potential beneficiaries. Only a very low compressive force is necessary to ensure deformation under assembly pressure. Fully RoHS-compliant, important electrical properties of THERM-A-GAP GEL 75VT include: 7.9 kV<sub>AC</sub>/mm dielectric strength (ASTM D149 test method); 1014 Ωcm volume resistivity (ASTM D257); 5.2 dielectric constant at 1,000 kHz/0.76 mm thick (ASTM D150); and 0.003 dissipation factor at 1,000 kHz/0.76 mm thick (Chomerics test method).	22.09.2025 14:30:00	Sep	news_2025-10-15_18.jpg	\images\news_2025-10-15_18.jpg	https://ph.parker.com/us/en/product-list/therm-a-gap-gel-75vt-thermally-conductive-gel	parker.com
Groundbreaking for EMC Lab	TDK is building a new EMC laboratory in Regensburg...	12550	Industry News	Groundbreaking for EMC Lab	TDK is building a new EMC laboratory in Regensburg. It will replace the accredited laboratory that has been in existence for more than 60 years at a new location. The facility will offer internal and external customers state-of-the-art capabilities for measuring electromagnetic compatibility (EMC). The groundbreaking ceremony for the new laboratory has now taken place. TDK is investing a double-digit million euro amount in the new building. The new laboratory will have a total area of almost 1,700 square meters, 1,100 square meters of which will be used for the laboratory and measuring stations. A showroom and a large customer area with meeting rooms are also planned. The centerpiece of the laboratory is a new 10-meter semi-anechoic chamber, in which even large vehicles and powerful industrial applications can be measured. It is complemented by a 3-meter full-absorber chamber for RF and radio applications, which is claimed to enable "the fastest measurement methods at the highest frequencies", as well as a compact chamber for measuring automotive components such as control units or onboard chargers. This chamber is equipped with absorbers that are only ten centimeters deep.	22.09.2025 11:00:00	Sep	news_2025-10-01_6.jpg	\images\news_2025-10-01_6.jpg	https://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/groundbreaking-new-emc-lab-regensburg/3629514	tdk-electronics.tdk.com
Lift motor developed using Ferrite Magnets – without Rare Earth Materials	Ziehl-Abegg claims to be "the first company worldw...	12546	Industry News	Lift motor developed using Ferrite Magnets – without Rare Earth Materials	Ziehl-Abegg claims to be "the first company worldwide to develop a high-performance synchronous lift motor that operates entirely without rare earth magnets – without compromising on power output". The new lift motor, which uses ferrite magnets, eliminates the need for critical raw materials such as neodymium and dysprosium, which have traditionally been considered indispensable for high-performance drives due to their power density. These rare earth elements are sourced almost exclusively from one single country. Despite foregoing rare earth high-performance magnets, this motor delivers identical performance – all within the same dimensions. This is a real advancement, particularly for high-torque lift applications where smooth operation and energy efficiency are critical. A patent application has already been filed.	19.09.2025 07:00:00	Sep	news_2025-10-01_2.jpg	\images\news_2025-10-01_2.jpg	https://www.ziehl-abegg.com/en/company/press/press-releases/news-content-detail/lift-motor-developed-using-ferrite-magnets	ziehl-abegg.com
Current/OS Foundation joined	Danisense has joined the Current/OS Foundation, a ...	12554	Industry News	Current/OS Foundation joined	Danisense has joined the Current/OS Foundation, a nonprofit, open partnership dedicated to ensuring reliable and sustainable hybrid AC/DC power distribution in buildings and installations. The aim of the foundation is to promote direct current electrical safety and to enhance energy resilience to ensure reliable access to electricity for all. The reason for joining is that Danisense "firmly believes that a swift and intelligent energy transition is possible through the wider adoption of DC microgrids, which are already proving superior to AC networks in several applications." According to Danisense "joining the Current/OS Foundation was a natural step for us to help shape the future of DC infrastructure."	18.09.2025 15:00:00	Sep	news_2025-10-01_10.jpg	\images\news_2025-10-01_10.jpg	https://danisense.com/	danisense.com
100 V MOSFETs deliver low Conduction Losses	Nexperia launched its AEC-Q101 qualified 100 V MOS...	12560	Product Release	100 V MOSFETs deliver low Conduction Losses	Nexperia launched its AEC-Q101 qualified 100 V MOSFETs in compact CCPAK1212 (12 mm x 12 mm) copper-clip packaging. According to the company "these devices deliver ultra-low conduction losses with on-resistance as low as 0.99 mΩ, and enable safe current above 460 A". This makes them suited for thermally demanding 48 V automotive applications, including on-board chargers (OBC), traction inverters, and battery management systems (BMS). In addition to passenger vehicles, these MOSFETs also benefit 2- and 3-wheel e-mobility, DC/DC converters, and industrial high-current modules, where efficiency and thermal reliability are equally critical. The next-generation 100 V AEC-Q101 trench silicon platform, combined with the thermal performance (R<sub>th(j-b)</sub> = 0.1 K/W) of Nexperia’s proprietary copper-clip CCPAK1212 package, enables this R<sub>DS(on)</sub>. Together, these features provide the critical advantages required in 48 V automotive systems - high current capability, superior power density, and a robust Safe Operating Area (SOA) rating of up to 400 A at 100 V. The devices are available in a choice of inverted top-side cooled (CCPAK1212i) and bottom-side cooled (CCPAK1212) versions.	18.09.2025 11:30:00	Sep	news_2025-10-01_16.jpg	\images\news_2025-10-01_16.jpg	https://www.nexperia.com/about/news-events/press-releases/100-v-mosfets-from-nexperia-deliver-ultra-low-conduction-losses-in-demanding-automotive-applications	nexperia.com
Manufacturing Partner for Power Devices	iDEAL Semiconductor confirms that its SuperQ&trade...	12566	Industry News	Manufacturing Partner for Power Devices	iDEAL Semiconductor confirms that its SuperQ™ silicon power devices are now in production at Polar Semiconductor, a foundry specializing in high-voltage, power, and sensor technologies. SuperQ uses a patented asymmetrical RESURF structure; it significantly reduces conduction and switching losses – with up to 2.7x lower resistance compared to legacy silicon and cutting switching losses by up to 2.1x versus competing devices. Polar Semiconductor operates a high-volume 200 mm manufacturing facility in Minnesota and is claimed to be "the only majority U.S.-owned foundry with deep expertise in high-voltage and power semiconductors". With a 50-year heritage in automotive production, Polar is IATF 16949 certified and committed to zero-defect manufacturing. iDEAL’s first products – 150 V and 200 V MOSFETs announced in July – are already in production at Polar, with 300 V and 400 V devices to follow. Polar is further expanding to double its manufacturing capacity and invest in next-generation technologies.	18.09.2025 07:00:00	Sep	news_2025-10-15_2.png	\images\news_2025-10-15_2.png	https://idealsemi.com/ideal-semiconductor-announces-polar-semiconductor-as-manufacturing-partner-for-superq-power-devices/	idealsemi.com
Semiconductor Company appoints President and CEO	OmniOn Power has appointed David French as its new...	12547	People	Semiconductor Company appoints President and CEO	OmniOn Power has appointed David French as its new President and CEO. French has worked for more than 40 years in the semiconductor and electronics industries. Prior to joining OmniOn, he managed NXP’s Mobile and Computing Business Unit. French has also served as the CEO of Cirrus Logic, where he led the company’s transformation towards mixed-signal audio solutions. In addition, he’s held various senior-level positions at Texas Instruments and Analog Devices. French’s appointment follows the resignation of Jeff Schnitzer in August 2025, the company’s prior President and CEO.	17.09.2025 08:00:00	Sep	news_2025-10-01_3.png	\images\news_2025-10-01_3.png	https://www.omnionpower.com/about/news/press-releases/omnion-power-press-release-david-french-named-president-and-ceo	omnionpower.com
Duo of Protection Switches that support Type-C EPR 3.1 extended Power Levels	Alpha and Omega Semiconductor announced two Type-C...	12562	Product Release	Duo of Protection Switches that support Type-C EPR 3.1 extended Power Levels	Alpha and Omega Semiconductor announced two Type-C sink and source protection switches to increase the power delivery capability of USB Type-C ports to 240 W, paving the way for Type-C extended power range (EPR) implementations. The AOZ13058DI offers overvoltage/overcurrent protection features suited for 48 V Type-C sinking applications, while the AOZ15953DI provides the additional protection features needed for Type-C sourcing applications. These switches help designers safeguard 48 V Type-C EPR capabilities to enhance reliability and functionality in high-performance and gaming laptops, personal computers, monitors, docking, and other higher-power connected portable devices. The AOZ13058DI features a 20 milliohm resistance and provides a set of features including programmable soft-start, overvoltage, ideal diode reverse-current, short-circuit, overcurrent, overtemperature, and ESD protection. These features also help isolate and protect downstream components from abnormal VBUS voltage and potentially harmful current conditions. Ideal diode fast reverse current protection allows multiple power paths to be connected in parallel without interference. The switch’s integrated positive and negative transient voltage suppression at VIN enhances immunity to voltage spikes meeting IEC safety standards (IEC61000-4-2: ±8 kV contact, ±15 kV contact; IEC61000-4-5: 20 A (8/20 µs) on VIN and VOUT). The AOZ13058DI also features a programmable current limit function, permitting its application as a sourcing switch in an EPR 3.1 docking system.	16.09.2025 13:30:00	Sep	news_2025-10-01_18.jpg	\images\news_2025-10-01_18.jpg	https://www.aosmd.com/news/alpha-and-omega-semiconductor-unveils-powerful-duo-protection-switches-support-type-c-epr-31	aosmd.com
2-in-1 SiC Molded Module	ROHM has developed the "DOT-247," a 2-in-1 SiC mol...	12561	Product Release	2-in-1 SiC Molded Module	ROHM has developed the "DOT-247," a 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx), suited for industrial applications such as PV inverters, UPS systems, and semiconductor relays. The module retains the versatility of the "TO-247" package while achieving design flexibility and power density. The DOT-247 features a combined structure consisting of two TO-247 packages. This design enables the use of large chips, which were structurally difficult to accommodate in the TO-247 package. Additionally, through optimized package structure, thermal resistance has been reduced by approximately 15 % and inductance by approximately 50 % compared to the TO-247. This enables a power density 2.3 times higher than the TO-247 in a half-bridge configuration – achieving the same power conversion circuit in approximately half the volume. These products featuring the DOT-247 package are available in two topologies: half-bridge and common-source. Currently, two-level inverters are the mainstream in PV inverters, but there is growing demand for multi-level circuits such as three-level NPC, three-level T-NPC, and five-level ANPC to meet the need for higher voltages. In the switching sections of these circuits, topologies such as half-bridge and common-source are mixed – making custom products necessary in many cases when using conventional SiC modules. Therefore, ROHM has developed each of these two topologies into a 2-in-1 module to support various configurations such as NPC circuits and DC/DC converters. Evaluation boards will also be made available.	16.09.2025 12:30:00	Sep	news_2025-10-01_17.jpg	\images\news_2025-10-01_17.jpg	https://www.rohm.com/news-detail?news-title=2025-09-16_news_sic-power-module&defaultGroupId=false	rohm.com
LLC Half-Bridge Transformers for isolated Gate Driver Bias Supply	The HTX8045C Series transformers from Coilcraft bu...	12558	Product Release	LLC Half-Bridge Transformers for isolated Gate Driver Bias Supply	The HTX8045C Series transformers from Coilcraft build on the proven chip-style construction of the HTX family – an improvement over conventional core and bobbin designs. This surface-mount configuration reduces component size and enhances manufacturing efficiency. With higher isolation voltage compared to the HTX7045C and an interwinding capacitance as low as 0.55 pF, the HTX8045C is particularly well-suited for use in isolated gate driver bias supplies employing the open-loop LLC topology to achieve low EMI noise and high CMTI (Common Mode Transient Immunity). These characteristics make it especially beneficial for high-frequency switches including SiC, GaN and IGBT technologies. The HTX8045C is AEC-Q200-qualified, making it suited for automotive traction inverters and motor controls, automotive on-board chargers (OBC), EV charging stations, battery management systems (BMS), automotive DC/DC converters as well as other automotive and industrial applications.	16.09.2025 09:30:00	Sep	news_2025-10-01_14.jpg	\images\news_2025-10-01_14.jpg	https://www.coilcraft.com/en-us/products/transformers/power-transformers/power-converter-transformers/htx8045c/	coilcraft.com
IGBT7 Modules for high Power Density and easier System Integration	Microchip announced a family of DualPack 3 (DP3) p...	12575	Product Release	IGBT7 Modules for high Power Density and easier System Integration	Microchip announced a family of DualPack 3 (DP3) power modules featuring IGBT7 technology available in six variants at 1200 V and 1700 V with high-current ranging from 300–900 A. These DP3 power modules are designed to address the growing demand for compact, cost-effective and simplified power converter solutions while reducing power losses by up to 15–20 % compared to IGBT4 devices. During overload temperatures may rise up to 175 °C. They are suited for industrial drives, renewables, traction, energy storage and agricultural vehicles. Available in a phase-leg configuration, the DP3 power modules in a footprint of approximately 152 mm × 62 mm × 20 mm, provide a second-source option to industry-standard EconoDUAL™ packages.	16.09.2025 08:30:00	Sep	news_2025-10-15_12.jpg	\images\news_2025-10-15_12.jpg	https://www.microchip.com/en-us/about/news-releases/products/new-dualpack-3-igbt7-modules-deliver-high-power-density	microchip.com
Fast Recovery Power Rectifier Assemblies	Dean Technology (DTI) extended their their power r...	12555	Product Release	Fast Recovery Power Rectifier Assemblies	Dean Technology (DTI) extended their their power rectifier assembly line, the HRFS5 Series. They join the HRS5 series and HRS10 series of standard recovery power assemblies. The HRFS5 series follows the open frame concept found in the legacy HRS5 and HRS10 products, allowing for better thermal conductivity and are intended for ambient air applications but can also be used in submerged oil environments. It offers a reverse recovery time (TRR) of 75 ns maximum, which is good for switching applications. HRFS5 units offer a maximum repetitive reverse voltage range from 14.4 to 28.8 kV and 5.7 A of average forward current. All products in the HRFS5 series line are capacitor compensated and modular based.	16.09.2025 06:30:00	Sep	news_2025-10-01_11.png	\images\news_2025-10-01_11.png	https://www.deantechnology.com/new-line-of-fast-recovery-power-rectifier-assemblies/	deantechnology.com
Global Agreement to Distribute High-Energy Density Capacitors	Mouser Electronics announces a global distribution...	12548	Industry News	Global Agreement to Distribute High-Energy Density Capacitors	Mouser Electronics announces a global distribution agreement with Quantic Evans, a company which is active in high-energy density capacitors for demanding mission-critical applications. Quantic Evans’ hybrid capacitors, known as EVANSCAPS, serve diverse markets, including aerospace, energy, and communications, where high-reliability, size, weight, and power (SWaP) are crucial. The Quantic Evans HyCap hybrid capacitors, available to order from Mouser, are designed to provide reliable operation in a wide range of harsh environments, including those with shock and vibration conditions. These devices are available in a capacitance range of 68 µF to 2700 µF with a ±20% tolerance, with a voltage range of 10 V<sub>DC</sub> to 150 V<sub>DC</sub>. The HyCap capacitor series’ robust construction makes them suitable for energy, industrial, space, and defence applications. They are built with patented hybrid wet tantalum technology - featuring a Tantalum Pentoxide anode and a Ruthenium Oxide cathode.	15.09.2025 09:00:00	Sep	news_2025-10-01_4.jpg	\images\news_2025-10-01_4.jpg	https://eu.mouser.com/newsroom/publicrelations-quantic-evans-new-manufacturer-2025final/	mouser.com
Cleanroom opening at Malaysian Wafer Fab	X-FAB celebrated the grand opening of a manufactur...	12569	Industry News	Cleanroom opening at Malaysian Wafer Fab	X-FAB celebrated the grand opening of a manufacturing line at its Sarawak facility. The ceremony was officiated by the Prime Minister of Malaysia, YAB Dato’ Seri Anwar Ibrahim, and the Sarawak Premier, YAB Datuk Patinggi Tan Sri Abang Johari Tun Openg. This major expansion – representing a $600 million investment – added 6,000 square meters of cleanroom space and was completed within two years, from groundbreaking to the first production lots. As a result, the site’s monthly wafer start capacity has increased from 30,000 to 40,000, with a key highlight being the more than doubling of capacity for X-FAB’s 180 nm BCD-on-SOI technology (XT018). BCD-on-SOI technology is superior in many aspects when compared to conventional bulk BCD technologies. Key advantages include virtual latch-up free circuits, strong EMC performance (due to complete isolation with buried oxide/DTI) and simplified handling of below ground transients. The XT018 platform features a portfolio of voltage options from 10 V to 375 V as well as a full range of automotive Grade-0 qualified Non-Volatile-Memory options. It is specifically designed for next generation automotive, industrial and medical applications operating in extreme temperature ranges from -40 to 175 °C.	12.09.2025 10:00:00	Sep	news_2025-10-15_5.jpg	\images\news_2025-10-15_5.jpg	https://www.xfab.com/news/details/article/x-fab-opens-new-cleanroom-at-its-malaysian-site	xfab.com
Compact Power Modules for Consumer and Industrial Equipment	Mitsubishi Electric has developed a compact versio...	12573	Product Release	Compact Power Modules for Consumer and Industrial Equipment	Mitsubishi Electric has developed a compact version of its DIPIPM power semiconductor modules specifically for use in consumer and industrial equipment such as packaged air conditioners and heat pump heating and hot water systems. The Compact DIPIPM series comprises the PSS30SF1F6 (30 A / 600V) and the PSS50SF1F6 (50 A / 600 V). By utilizing reverse-conducting IGBTs (RC-IGBTs), the module’s footprint has been reduced to almost 53 % of that of the company’s conventional Mini DIPIPM Ver.7, enabling more compact inverter substrates in packaged air conditioners and other applications. In 1997 Mitsubishi Electric commercialized the DIPIPM intelligent power semiconductor module with a transfer mold structure; this integrated switching elements and the control ICs that drove and protected them. Despite the smaller product size, the use of high-heat dissipation insulating sheet material suppresses temperature rise at the junction, achieving a current rating of 50 A. An additional interlock function contributes to the simplification of inverter substrate design, but it also simplifies the short-circuit protection design of inverter substrates. By maintaining the same insulation distance between terminals and the heat sink as that of conventional products, replacement of those products is facilitated. Furthermore, the lower limit of the continuous operating temperature is now extended to -40 °C.	11.09.2025 06:30:00	Sep	news_2025-10-15_10.jpg	\images\news_2025-10-15_10.jpg	https://www.mitsubishielectric.com/en/pr/2025/0911/	mitsubishielectric.com
500 W integrated Power Supplies for High-Rel Applications	GAIA Converter has launched the GRD-50A-M series o...	12580	Product Release	500 W integrated Power Supplies for High-Rel Applications	GAIA Converter has launched the GRD-50A-M series of scalable 500 W integrated power supplies for high-reliability markets such as military and aerospace. This family of commercial-off-the-shelf board power supplies, designed for 24 V<sub>DC</sub> and 28 V<sub>DC</sub> input, complies with major military standards, including MIL-STD-1275, MIL-STD-704, and MIL-STD-461. Key specifications and features include a 16-38 V<sub>DC</sub> permanent input voltage with transient voltage protection of up to 100 V<sub>DC</sub>, as well as reverse polarity and overload protection. The power supplies offer a total output power of 500 W with 12 V<sub>DC</sub>, 15 V<sub>DC</sub>, 24 V<sub>DC</sub> or 28 V<sub>DC</sub> output voltage. The GRD-50A-M series features an overall efficiency of 89 %, with full protection for output short circuit (hiccup mode), overvoltage, and overtemperature. The series features 1500 V<sub>DC</sub> primary-secondary isolation and 500 V<sub>DC</sub> chassis ground isolation. Overall board dimensions are 255 × 70 × 24.25 mm³ and operating temperatures extend from -40 °C to +85 °C base-plate. Furthermore, the GRD-50A-M comes in a range of different configuration options, including board only (/B), coated (/V), and parallel (/P).	10.09.2025 13:30:00	Sep	news_2025-10-15_17.png	\images\news_2025-10-15_17.png	https://www.gaia-converter.com/product-overview/power-solutions/	gaia-converter.com
Power Supply Unit Reference Design for AI Data Centers and Servers	Infineon Technologies has introduced a 12 kW refer...	12559	Product Release	Power Supply Unit Reference Design for AI Data Centers and Servers	Infineon Technologies has introduced a 12 kW reference design for high-performance power supply units (PSUs), specifically designed for AI data centers and server applications. The reference design offers high efficiency and high-power density, and leverages all relevant semiconductor materials silicon, silicon carbide and gallium nitride. It is aimed at research and development engineers, hardware designers, and developers of power electronics systems. To achieve high-performance levels, the design leverages advanced power conversion topologies in both the AC/DC and DC/DC power stages. The front-end AC/DC converter features a 3-level flying capacitor interleaved power factor correction topology, delivering peak efficiency above 99.0 percent while reducing magnetic component volume. This is achieved by Infineon’s CoolSiC™ technology. The isolated DC/DC converter features a full-bridge LLC resonant converter and offers peak efficiency above 98.5 percent, enabled by using two planar high-frequency transformer and Infineon’s CoolGaN™ technology. These architectures, combined with the company’s latest wide-bandgap technologies, achieve a power density of up to 113 W/in³. Another key feature of the 12 kW PSU reference design is the bidirectional energy buffer, which is integrated into the overall power supply topology. This converter enables compliance with hold-up time requirements while significantly reducing capacitance requirements. Furthermore, the energy buffer provides a grid-shaping function, improving system reliability and limiting both fluctuations and the rate of change of power drawn from the grid during transient events.	10.09.2025 10:30:00	Sep	news_2025-10-01_15.jpg	\images\news_2025-10-01_15.jpg	https://www.infineon.com/market-news/2025/INFPSS202509-142	infineon.com
Commercial Launch of 200 mm SiC Materials Portfolio; ready to Manufacture at Scale	Wolfspeed announced the commercial launch of its 2...	12549	Industry News	Commercial Launch of 200 mm SiC Materials Portfolio; ready to Manufacture at Scale	Wolfspeed announced the commercial launch of its 200 mm SiC materials products. Wolfspeed is also offering 200 mm SiC epitaxy for immediate qualification, which, when paired with the company’s 200 mm bare wafers, delivers high scalability and improved quality, enabling the next generation of high-performance power devices. The improved parametric specifications of the 200 mm SiC bare wafers at 350 µm thickness and "enhanced, industry-leading doping and thickness uniformity of the 200 mm epitaxy" is claimed to enable "device makers to improve MOSFET yields, accelerate time-to-market, and deliver more competitive solutions across automotive, renewable energy, industrial, and other high-growth applications".	10.09.2025 10:00:00	Sep	news_2025-10-01_5.png	\images\news_2025-10-01_5.png	https://www.wolfspeed.com/company/news-events/news/wolfspeed-announces-the-commercial-launch-of-200mm-silicon-carbide-materials-portfolio-unlocking-the-industrys-ability-to-manufacture-at-scale/	wolfspeed.com
3 kA TVS Diode in Compact Surface Mount Package	Littelfuse launched the DFNAK3 Series of High-Powe...	12563	Product Release	3 kA TVS Diode in Compact Surface Mount Package	Littelfuse launched the DFNAK3 Series of High-Power TVS Diodes. These surface mount devices deliver 3 kA (8/20 µs) surge current protection - claimed to be the highest available in such a small footprint - making them suited for safeguarding DC-powered systems and Power over Ethernet (PoE) applications in demanding environments. Unlike traditional high-surge TVS diodes that come in bulky axial-leaded or large surface mount packages, the DFNAK3 Series uses a compact DFN package - "making it the smallest 3 kA-rated TVS diode on the market today". It offers a 70 % smaller footprint than overcoated alternatives and is also 70 % lower in height than standard SMD-type coated packages. This enables space-constrained, high-density PCB designs without compromising surge performance or system robustness. Engineered to meet IEC 61000-4-5 Level 4 requirements, the DFNAK3 Series provides an alternative to standard TVS diodes, MOVs, and GDTs. The surface mount configuration also supports cost-effective, automated PCB assembly, reducing overall production complexity.	09.09.2025 14:30:00	Sep	news_2025-10-01_19.jpg	\images\news_2025-10-01_19.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-launches-industrys-smallest-3-ka-tvs-diode-in-compact-surface-mount-package	littelfuse.com
MoU to develop high-performance GaN-based Inverters for Light Evs	Infineon Technologies and Lingji Innovation Techno...	12545	Industry News	MoU to develop high-performance GaN-based Inverters for Light Evs	Infineon Technologies and Lingji Innovation Technology, a subsidiary of Ninebot, signed a Memorandum of Understanding (MoU) to further drive gallium nitride technology in the area of light electric vehicles (LEV). Infineon provides GaN products supporting Lingji to develop electric two-wheeler inverter systems based on Infineon’s new-generation CoolGaN™ G5 power transistors. Specializing in smart control technologies, Lingji will use its algorithms to target improved drivetrain efficiency at higher power density levels and higher switching frequencies. Considering China’s new standard, that e-Scooter’s plastic mass shall not exceed 5.5 % of vehicle mass, GaN became a preferred choice as it can reduce the number of passive components for space optimization. The MoU aims to design GaN motor drive technologies for 48 V – 72 V solutions to provide compatible core components for high-end models and shared mobility scenarios. For consumers, LEVs stand out as an affordable and accessible entry point into electric mobility. Unlike cars, LEVs typically do not rely on extensive charging infrastructure, as removable batteries allow users to charge at home using standard electrical sockets. Industry analyst McKinsey estimates that this market will reach $340 billion by 2030. Both Infineon and Lingji think that LEVs, with their affordability, ease of access, and environmental benefits, "are leading the transition to vehicle electrification around the world".	09.09.2025 06:00:00	Sep	news_2025-10-01_1.jpg	\images\news_2025-10-01_1.jpg	https://www.infineon.com/market-news/2025/INFPSS202509-141	infineon.com
Fabless GaN Manufacturer changes CEO	Wise Integration appointed Ghislain Kaiser as Chie...	12551	People	Fabless GaN Manufacturer changes CEO	Wise Integration appointed Ghislain Kaiser as Chief Executive Officer. Kaiser succeeds CEO and co-founder, Thierry Bouchet, who will continue to serve as Chief Technology Officer and General Manager, leading the worldwide R&D and driving the technological vision. In 2006, Kaiser cofounded Docea Power, a French EDA startup pioneering full-chip, system-level power and thermal modelling, with the vision of addressing the growing power-consumption and thermal challenges in IC and platform design. As CEO, he led the company to domain leadership and its acquisition by Intel in 2015. He then joined Intel, where for the next decade he held senior director roles, most recently overseeing system-simulation engineering and worldwide customer-enablement organization. Those programs tackled critical power, thermal, and performance challenges in designing consumer, data-center, and AI systems. Kaiser began his career at STMicroelectronics, where he held technical and leadership positions across test and product engineering, design, and architecture teams. ‘Wise Integration spun out from CEA Leti in 2020 using the institute’s GaN-on-silicon R&D platform.	08.09.2025 12:00:00	Sep	news_2025-10-01_7.jpg	\images\news_2025-10-01_7.jpg	https://wise-integration.com/wise-integration-appoints-ghislain-kaiser-successful-high-tech-entrepreneur-former-intel-executive-as-ceo-to-lead-global-growth/	wise-integration.com
Distribution Agreement for Transformers and Coils	Anglia Components has signed an exclusive agreemen...	12570	Industry News	Distribution Agreement for Transformers and Coils	Anglia Components has signed an exclusive agreement for UK and Ireland with Hahn, a German manufacturer of standard and custom transformers and inductive coils. The product range includes among other products parts targeted at switch-mode power supplies, EMC and boiler-ignition. Hahn was one of the first winding goods manufacturers to implement the stringent requirements of DIN ISO 9001:2015 and has optimized its processes and quality management to meet even tougher VDA Volume 6.3 (Automotive Standard) regulations.	08.09.2025 11:00:00	Sep	news_2025-10-15_6.jpg	\images\news_2025-10-15_6.jpg	https://www.anglia-live.com/NewsArticles/NewsArticle.aspx?Article=5989	anglia-live.com
High-Efficiency Power Chokes	ITG Electronics highlights its portfolio of power ...	12557	Product Release	High-Efficiency Power Chokes	ITG Electronics highlights its portfolio of power factor correction (PFC) chokes: the PFC282820 Series, purpose-built for 800 – 5000 W continuous conduction mode PFC boost converter applications in high-wattage industrial and automotive systems. Featuring a 27.5 mm × 20 mm footprint with a height of 28.5 mm, the PFC282820 Series helps design engineers to meet demanding power density requirements without sacrificing efficiency. A wider configuration (27.5 mm × 28.5 mm) is also available to support higher current handling needs, all within the same 5,000 W power ceiling. Part of ITG’s Cubic Design PFC Choke lineup, the PFC282820 Series utilizes flat wire and a square core to deliver enhanced power density and thermal performance compared to traditional toroidal alternatives. The series is engineered to support the evolving requirements of AC to DC power conversion in next-generation industrial and automotive electronics. The PFC282820 Series supports inductance ranges from 33 – 330 µH, with custom values available upon request. High-current output options can handle up to 46 A, with approximately 50 % roll off for superior performance under load.	08.09.2025 08:30:00	Sep	news_2025-10-01_13.png	\images\news_2025-10-01_13.png	https://www.itg-electronics.com/en/category/4	itg-electronics.com
3.3 kV SiC MOSFET Lineup and Linecard	NoMIS Power Corporation announced the commercial r...	12564	Product Release	3.3 kV SiC MOSFET Lineup and Linecard	NoMIS Power Corporation announced the commercial release of its first 3.3 kV SiC MOSFET, the NoMIS N3PT080MP330 - a planar device with an on-resistance of 80 mΩ (34 A) and "best-in-class figures of merit". Key application areas include battery energy storage systems (BESS), renewable energy converters, transportation electrification, and industrial motor drives. The company offers the N3PT080MP330K 3.3 kV SiC MOSFET in TO-247 4L with high voltage creepage notch for industrial environments. This device is complemented by NoMIS Power’s 160 mΩ SiC bi-directional switches, giving designers multiple options to precisely match device performance to application requirements. The 3.3 kV lineup will expand later this year with the launch of a 50 mΩ (55 A) SiC MOSFET, followed in 2026 by a 25 mΩ (109 A) SiC MOSFET. Samples of are available in both bare die (binned by threshold voltage) and discrete package for temperatures up to 175 °C. In energy and infrastructure the devices are suited for battery energy storage systems (BESS), high-power solar inverters, and DC solid-state circuit breakers (SSCBs) that improve efficiency and resilience in medium- and high-voltage networks, while the main applications in the transportation and marine sector are railway traction systems, heavy-duty EVs (buses & trucks), agriculture and construction machinery, marine propulsion, and ship-to-shore power for ports. In charging and industrial systems the devices enable ultra-fast EV charging stations and large industrial motor drives with power conditioning and processing control.	05.09.2025 15:30:00	Sep	news_2025-10-01_20.jpg	\images\news_2025-10-01_20.jpg	https://nomispower.com/news/nomis-power-expands-sic-portfolio-with-new-3-3-kv-sic-mosfet-lineup-for-medium-voltage-power-electronics-applications/	nomispower.com
200 V Family of SuperQ-based MOSFETs	iDEAL Semiconductor has announced the first of its...	12544	Product Release	200 V Family of SuperQ-based MOSFETs	iDEAL Semiconductor has announced the first of its 200 V family of SuperQ™-based MOSFETs has entered mass production, with four additional 200 V devices now sampling. The first 200 V device to reach mass production, the iS20M028S1P, is a 25 mO MOSFET in a TO-220 package. iDEAL’s lowest-resistance 200 V devices, now sampling in TOLL and D²PAK-7L, achieve a maximum R<sub>DS(on)</sub> of just 5.5 mΩ. "By expanding SuperQ into 200 V, iDEAL is proving that silicon innovation is far from over," said Mark Granahan, CEO and Founder of iDEAL Semiconductor. "These results show that we can deliver the lowest resistance and superior switching behavior while maintaining the manufacturability, reliability, and cost advantages of silicon. It’s a major milestone for our company and for customers looking to push efficiency forward." Target applications for the 200 V SuperQ family include motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar.	04.09.2025 15:30:00	Sep	news_2025-09-15_22.jpg	\images\news_2025-09-15_22.jpg	https://idealsemi.com/ideal-semiconductor-announces-200-v-family-of-superq-based-mosfets-with-industry-leading-cost-x-performance/	idealsemi.com
Three-Phase Sinewave Filter	EMIS has announced the release of its TPQS3113 Thr...	12541	Product Release	Three-Phase Sinewave Filter	EMIS has announced the release of its TPQS3113 Three-Phase Sinewave Filter, designed to improve power quality, protect connected equipment, and extend operating lifetimes in demanding industrial applications. Modern compact variable frequency drives (VFDs) that utilize high-speed IGBT switching transistors generate significant harmonic distortion. The TPQS3113 filter smooths these pulse width modulated (PWM) signals into near-perfect sinewaves, providing dV/dt protection, reducing motor losses, and increasing load efficiency. This results in longer motor lifespans, enhanced system reliability, and reduced downtime. In addition to motors, the TPQS3113 also benefits other sensitive equipment such as computers, power converters, and automation systems by minimizing voltage and current waveform distortions.	04.09.2025 12:30:00	Sep	news_2025-09-15_19.jpg	\images\news_2025-09-15_19.jpg	https://emisglobal.com/products/power-quality/output-filters/three-phase-sinewave-filter/pqsw/	emisglobal.com
SiC MOSFETs Adopted in Inverter Brick	ROHM and Schaeffler have started mass production o...	12523	Industry News	SiC MOSFETs Adopted in Inverter Brick	ROHM and Schaeffler have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer. The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack. "Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness," says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler.	04.09.2025 06:00:00	Sep	news_2025-09-15_1.jpg	\images\news_2025-09-15_1.jpg	https://www.rohm.com/news-detail?news-title=2025-09-04_news_schaeffler&defaultGroupId=false	rohm.com
Expansion of European Distribution Centre and Headquarters	TTI IP&E – Europe has officially begun constructio...	12527	Industry News	Expansion of European Distribution Centre and Headquarters	TTI IP&E – Europe has officially begun construction to expand its European Distribution Centre (EDC) and headquarters. With the groundbreaking ceremony, the project is now underway in Maisach-Gernlinden. Completion of the building exterior is scheduled for November 2026. Installation of the intralogistics and warehouse technology will then begin. Full completion of the EDC, including all building components and infrastructure, is planned for March 2028. The expansion will double TTI’s footprint at the site, adding 51,000 m² of space directly connected to the existing buildings. This includes approximately 30,000 m² of new warehouse and logistics capacity and 6,000 m² of additional office and administrative space. The project is backed by Invesco Real Estate, Munich, as investor and owner, and executed by BREMER Stuttgart GmbH as general contractor. The expanded EDC will feature state-of-the-art automation, including the world’s largest Autostore system built on a platform structure. This will enhance material flow efficiency and ensure faster, more reliable deliveries across Europe. The expansion will also create around 200 new ergonomic and modern jobs, adding to the current workforce of approximately 700 employees.	03.09.2025 10:00:00	Sep	news_2025-09-15_5.jpg	\images\news_2025-09-15_5.jpg	https://www.ttieurope.com/content/ttieurope/en.html	ttieurope.com
ECPE Workshop ’Ultra-High-Voltage Power Electronics’	The shift to renewables demands a stronger, smarte...	12525	Event News	ECPE Workshop ’Ultra-High-Voltage Power Electronics’	The shift to renewables demands a stronger, smarter grid. Medium Voltage DC (MVDC) has been identified as a key enabler, allowing efficient long-distance power transmission and mega-watt EV charging. But how do we control such high voltages? Discover the answer with Europe’s leading experts during this workshop November 12 - 13 in Lyon, France or online. Explore the development of cutting-edge SiC semiconductors to facilitate the high-voltage converters shaping the future of energy.	03.09.2025 08:00:00	Sep	news_2025-09-15_3.jpg	\images\news_2025-09-15_3.jpg	https://www.ecpe.org/events/workshops-tutorials/all/details/evt/mdl/ed/662/eyJtZjEiOnsibWx1MSI6Inx8fHx8fHwifSwiZWYyIjp7ImVsdTEiOiIxfGx1ZmVkaXRtZWRpYWxpYnJhcnl8TWVkaWFMaWJyYXJ5RXZlbnRMaXN0fE1lZGlhTGlicmFyeXxldmVudExpc3R8Mjg3fDIwMzd8IiwiZXBjOSI6dHJ1ZX0sInJmMyI6eyJyb2FkbWFwTGlzdFVyaSI6Inx8fHx8fHwifSwiYmY0Ijp7ImJsdTEiOiJ8fHx8fHx8In0sImxkNSI6eyJsZHUxIjoifHx8fHx8fCJ9fQ==/?cHash=8d2aa95ac7f652b0a2591b3073861ccc	ecpe.org
Automotive High-Withstand Voltage LDO Linear Regulator IC	ABLIC launched sales of the S-19230/1 Series, an a...	12543	Product Release	Automotive High-Withstand Voltage LDO Linear Regulator IC	ABLIC launched sales of the S-19230/1 Series, an automotive high-withstand voltage regulator IC. Recently, the power consumption of automotive electronic components like various ECUs and infotainment systems has been steadily increasing. As a countermeasure, there’s a growing trend to increase the voltage of automotive auxiliary batteries from the conventional 12V to 48V. Auxiliary batteries supply power to electronic components via wire harnesses. By quadrupling the voltage to supply the same power, the current can be reduced to one-quarter. This enables the use of thinner wire harnesses, contributing to lighter vehicle designs and improved fuel or electric power efficiency. The S-19230/1 Series supports 48V, 24V, and 12V auxiliary batteries, thanks to its high input voltage tolerance of up to 80V. It also achieves a low operating current of 2.0µA, which is crucial for supplying power to constantly operating sensors and CAN/LIN transceivers, helping to reduce the system’s standby current. Additionally, this product is the first ABLIC voltage regulator to integrate an open-loop protection circuit. The protection circuit suppresses the rise in output voltage to a certain level if the wiring between the external resistor and the IC - used for setting the output voltage - is broken (open fault). This protection circuit eliminates the need for conventional external components used for overvoltage protection, contributing to cost reduction, space saving, and enhanced safety.	02.09.2025 14:30:00	Sep	news_2025-09-15_21.png	\images\news_2025-09-15_21.png	https://www.ablic.com/en/semicon/news/2025/09/02/s-19230-1/	ablic.com
600 W Automotive TVS Diode	Littelfuse announced the launch of the SZSMF6L Ser...	12542	Product Release	600 W Automotive TVS Diode	Littelfuse announced the launch of the SZSMF6L Series of unidirectional and bidirectional TVS diodes. These 600 W automotive-grade devices provide robust protection against high-energy transients in a compact, surface-mount SOD-123FL package, making them ideal for increasingly space-constrained automotive and electric vehicle (EV) designs. Building on the success of the 400 W SZSMF4L Series introduced in 2023, the SZSMF6L Series delivers 50% higher peak power handling while maintaining the same compact footprint. The improved surge protection and enhanced clamping performance help safeguard critical automotive systems exposed to voltage spikes from switching events, load dumps, or electrostatic discharge (ESD). "The SZSMF6L Series addresses the evolving demands of EV and automotive system designers who need greater transient protection without compromising board space," said Charlie Cai, Director Product Marketing SBU at Littelfuse. "With the transition to zonal architectures and the continued push for miniaturization, this 600 W solution offers engineers a more robust and thermally reliable alternative to the SZSMF4L for high-stress environments." The SZSMF6L TVS diodes enable more efficient, compact, and rugged designs that meet the growing electrical demands of next-generation vehicles. Their performance and footprint compatibility allow seamless upgrade paths from the SZSMF4L when additional power handling is required.	02.09.2025 13:30:00	Sep	news_2025-09-15_20.jpg	\images\news_2025-09-15_20.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-adds-600-w-szsmf6l-series-to-automotive-tvs-line-for-high-energy-transient-protection	littelfuse.com
GaN-on-Si Foundry Services	X-FAB Silicon Foundries is building on its experti...	12524	Industry News	GaN-on-Si Foundry Services	X-FAB Silicon Foundries is building on its expertise in gallium nitride (GaN) processing technology for high-power applications by introducing GaN-on-Si foundry services for dMode devices as part of its XG035 technology platform. The move further leverages X-FAB’s advantage as a pure-play foundry that now offers a set of processing technologies for GaN and other WBG materials – including SiC – to help fabless semiconductor companies bring their designs to life. X-FAB provides the GaN-on-Si technology from its state-of-the-art 8-inch fab in Dresden, one of six production facilities operated by the company worldwide. The Dresden fab hosts a wide range of specialized processing equipment, measurement tools and technologies that are optimized for GaN development and production, together with analog CMOS, in a stable, trusted, automotive-qualified fab environment. Tools on site have been optimized to handle the thicker GaN-on-Si wafers required by customers in sectors such as automotive, data center, industrial, renewable energy, medical, and others. Thanks to strong high-voltage GaN expertise over several years, the company’s in-house expertise now extends to GaN-on-Si foundry services for dMode devices following the recent release of its XG035 dMode technology as an open foundry platform. The process includes dMode HEMT transistors (scalable from 100V to 650V), often used in power conversion applications. In addition, X-FAB offers customer-specific GaN technologies including dMode, eMode HEMTs as well as Schottky Barrier Diodes, which are popular for high-frequency rectification, power supply, and solar panel applications, among others.	02.09.2025 07:00:00	Sep	news_2025-09-15_2.png	\images\news_2025-09-15_2.png	https://www.xfab.com/news/details/article/x-fab-now-offers-gan-on-si-foundry-services	xfab.com
New Brand Identity and Tagline: "In Everything, Better"	TDK Corporation announces the launch of its new br...	12532	Industry News	New Brand Identity and Tagline: "In Everything, Better"	TDK Corporation announces the launch of its new brand identity and tagline: "In Everything, Better". This serves as a significant driver of the Long-term Vision "TDK Transformation" and captures the company’s unique venture spirit, its commitment to progress, and its vision for a sustainable future. For 90 years, TDK has quietly shaped the world from within. TDK has been pushing for progress and boldly reinventing itself; from ferrite cores to cassette tapes, to powering the digital age with advanced components, sensors, and batteries, leading the way towards a sustainable future. The company’s technologies nowadays power the devices and systems that define modern life: from smartphones and electric vehicles to industrial applications and energy systems. With over 100,000 passionate team members worldwide, united by a start-up mentality and a drive for innovation, TDK is an enabler behind the scenes, creating impact from within. "In Everything, Better" - the new tagline, debuting in September 2025, is not just a phrase; it is a declaration of TDK’s promise to always strive for better, for ourselves and for society. Noboru Saito, President & CEO of TDK Corporation mentioned "The new brand identity aligns with our Long-term Vision of TDK Transformation, and it is rooted in our Corporate Motto of ’Contributing to culture and industry through creativity’ and Corporate Principles of ’Vision, Courage, and Trust’. It is what we believe, how we act, and how we communicate. It is who we are today, where we are going in the future and the legacy we create."	01.09.2025 15:00:00	Sep	news_2025-09-15_10.jpg	\images\news_2025-09-15_10.jpg	https://www.tdk.com/en/news_center/press/20250901_01.html	tdk.com
150 V MOSFETs in TOLL, TOLG, and TOLT Packages	Infineon Technologies has expanded its OptiMOS&tra...	12538	Product Release	150 V MOSFETs in TOLL, TOLG, and TOLT Packages	Infineon Technologies has expanded its OptiMOS™ 6 portfolio by introducing the Automotive 150 V MOSFET family. These devices are specially developed to meet the demanding requirements of modern electric vehicles and are available in three advanced package options: TOLL, TOLG, and TOLT. The automotive MOSFET family, based on Infineon’s 6th generation OptiMOS technology, offers two different drain-source resistance levels across all device variants. All variants are rated for the 150 V voltage class and deliver the lowest R<sub>DS(on)</sub> available in this class, reaching as low as 2.5 mΩ. This enables minimal conduction losses and excellent efficiency. The tight distribution of the gate threshold voltage (V<sub>GS(th)</sub>) supports optimal synchronization when multiple MOSFETs are used in parallel configurations, which is particularly relevant for high-power automotive systems. The devices also feature low switching losses up to high frequencies, allowing for highly efficient operation in fast-switching applications such as modern DC/DC converters. In terms of thermal performance, the variants achieve a thermal resistance as low as 0.4 K/W. This significantly improves heat dissipation, reduces system-level cooling requirements, and lowers associated expenses.	01.09.2025 09:30:00	Sep	news_2025-09-15_16.jpg	\images\news_2025-09-15_16.jpg	https://www.infineon.com/market-news/2025/INFATV202509-139	infineon.com
40 Watt DC/DC Converter	The THL 40WI series extends Traco Power’s existing...	12536	Product Release	40 Watt DC/DC Converter	The THL 40WI series extends Traco Power’s existing DC/DC converter portfolio with 40 Watt, 1′ × 1′ package converters. With the focus on combining cost efficiency and quality this isolated high performance DC/DC converter series is suitable for many different applications. The series comes in an encapsulated, shielded 1 × 1′ × 0.43′ metal package and offers integrated remote on/off and trim functions. High efficiency up to 93% enables the converter to operate from –40°C to +65°C without derating. All models have a wide 4:1 input voltage range and precisely regulated, isolated outputs. The series meets the latest IT safety certifications (UL 62368-1) and is suitable for uses in mobile equipment, instrumentation, distributed power architectures in communication and industrial electronics and everywhere where cost efficiency and quality are critical factors.	01.09.2025 07:30:00	Sep	news_2025-09-15_14.jpg	\images\news_2025-09-15_14.jpg	https://www.tracopower.com/int/thl-40wi	tracopower.com
Strategic Distribution Partnership to Expand Presence Across APAC	Lotus Microsystems and EDOM Technology jointly ann...	12528	Industry News	Strategic Distribution Partnership to Expand Presence Across APAC	Lotus Microsystems and EDOM Technology jointly announced the signing of a strategic distribution agreement for the Asia-Pacific region. This collaboration combines Lotus Microsystems’ power management solutions with EDOM Technology’s extensive distribution network, strong field application engineering (FAE) force, and deep market expertise. The partnership is designed to accelerate customer adoption, deliver superior technical support, and strengthen the presence of both companies across the fast-growing APAC markets. Power and thermal management are crucial aspects of electronic design, especially in the rapidly developing computing, networking, and IoT markets. Effective thermal management ensures that devices operate within a safe temperature range, optimizing performance and extending their operational life. Lotus Microsystems’ work on high-efficiency power modules supports more sustainable computing by reducing energy losses and improving overall power usage effectiveness. "We are delighted to partner with EDOM Technology, a recognized leader in distribution across Asia. This agreement marks an important step in our global expansion, enabling Lotus Microsystems to better serve customers in key APAC markets with the strong support and capabilities that EDOM provides."said Hans Hasselby-Andersen, CEO of Lotus Microsystems.	29.08.2025 11:00:00	Aug	news_2025-09-15_6.jpg	\images\news_2025-09-15_6.jpg	https://www.lotus-microsystems.com/	lotus-microsystems.com
CAN FD Transceiver Achieves Toyota VeLIO Certification	NOVOSENSE Microelectronics recently announced that...	12539	Product Release	CAN FD Transceiver Achieves Toyota VeLIO Certification	NOVOSENSE Microelectronics recently announced that its automotive-grade CAN FD transceiver, the NCA1044-Q1, has successfully passed Toyota’s VeLIO (Vehicle LAN Interoperability and Optimization) certification. Prior to this, the device had already obtained the IBEE/FTZ-Zwickau EMC certification in Europe. The certification process involves stringent testing, including Transceiver Delay, dV/dt characteristics, R>D and D>R Distortion Delays, Static and Frequency Response of Threshold Voltage, Single-Ended S-Parameters, and Static Tests. The NCA1044-Q1 successfully passed all these tests, underscoring its capabilities in high-speed communication, signal integrity, and electromagnetic compatibility. In addition to VeLIO, the NCA1044-Q1 has also been certified by IBEE/FTZ-Zwickau according to the IEC 62228-3 standard, while also meeting Volkswagen’s VW80121-3, 2023-12 EMC requirements. Unlike SAE J2962, the IEC 62228-3 standard focuses directly on the EMC performance of the transceiver itself, making the certification one of the most rigorous benchmarks in the automotive industry and a widely referenced standard across global automakers. The IBEE/FTZ-Zwickau EMC certification covers four major categories: Emission RF Disturbances, Immunity to RF Disturbances, Immunity to Transients, and Immunity to ESD. The NCA1044-Q1 passed all tests successfully, providing high confidence in its robustness under demanding automotive conditions. With both VeLIO and IBEE/FTZ-Zwickau certifications, the NCA1044-Q1 significantly reduces its implementation and system verification costs for OEMs and Tier 1 suppliers.	29.08.2025 10:30:00	Aug	news_2025-09-15_17.jpg	\images\news_2025-09-15_17.jpg	https://www.novosns.com/en/company-news-341	novosns.com
Power Modules to Accelerate Data Center Power Architecture	Infineon Technologies announced the strengthening ...	12534	Industry News	Power Modules to Accelerate Data Center Power Architecture	Infineon Technologies announced the strengthening of its existing collaboration with Delta Electronics in the development of high-density power modules capable of enabling vertical power delivery to AI processors in hyperscale data centers. Together, the companies are taking a next step to drive decarbonization and digitalization in AI data centers further. The partnership leverages Infineon’s ultra-thin silicon (MOSFET) chip technology and embedded packaging expertise, as well as Delta’s industry-leading power module design and manufacturing capabilities. This results in highly dense modules with exceptional efficiency to enable vertical power delivery (VPD) architecture to the xPUs in hyperscale data centers. The usage of vertical power delivery modules in comparison to a lateral mounted discrete solution can save up to 150 tons of CO<sub>2</sub> over an expected lifetime of three years per rack. Assuming that future hyperscale data centers will consists of up to 100 server racks, the amount of carbon dioxide saved is equivalent to the CO<sub>2</sub> emissions of 4000 households per year. Infineon’s OptiMOS™ silicon-based 90 A integrated power-stage solution is being utilized by Delta to develop VPD modules. The use of vertical power delivery is a key factor in improving system efficiency as it allows for a more direct and compact power delivery path. By delivering power vertically, rather than horizontally, the VPD modules reduce power delivery network losses in the system. This, in turn, enables the modules to achieve higher power density and efficiency, while also reducing the amount of heat generated due to less power loss. Additionally, the vertical power delivery design also frees up space on the system board, allowing hyperscalers a more efficient use of space and the development of more compact and dense data center designs reducing total-cost of ownership.	28.08.2025 17:00:00	Aug	news_2025-09-15_12.jpg	\images\news_2025-09-15_12.jpg	https://www.infineon.com/market-news/2025/INFPSS202508-138	infineon.com
Jingya Huang Appointed Senior Manager Marketing Communications	With its commitment to innovation and growth throu...	12529	People	Jingya Huang Appointed Senior Manager Marketing Communications	With its commitment to innovation and growth through employee development, Indium Corporation announces the promotion of Jingya Huang to Senior Manager, Marketing Communications, to continue to lead the company’s branding and promotional efforts. In her new role, Huang is responsible for the strategic direction of Indium Corporation’s global marketing communications initiatives, focusing on innovation and maximizing impact in markets worldwide. She will continue to lead the Marketing Communications team with an emphasis on fostering innovation, ownership, and collaboration. Huang will also provide strategic support to other internal teams and lead high-priority special projects that advance the company’s mission and global presence. Huang joined Indium Corporation as Marketing Communications Assistant Manager in 2016. She was promoted to Marketing Communications Manager in 2020, at which point she began leading all global marketing communications efforts and the entire Marketing Communications team.	28.08.2025 12:00:00	Aug	news_2025-09-15_7.jpg	\images\news_2025-09-15_7.jpg	https://www.indium.com/blog/indium-corporation-promotes-huang-to-senior-manager-marketing-communications/	indium.com
Digital Hall latch IC in CMOS technology	Melexis unveils a variant of the MLX92211, a 3-wir...	12540	Product Release	Digital Hall latch IC in CMOS technology	Melexis unveils a variant of the MLX92211, a 3-wire Hall-effect latch. This device is designed for lateral magnetic position sensing, with high ESD protection and a high output current limit. This latest addition enables motor miniaturization by providing enhanced integration and cost-effective performance, ideal for automotive compact motors used in applications such as seat motors, sunroofs and thermal expansion valves. The MLX92211 IMC addresses these head-on with an integrated magnetic concentrator (IMC) that enables lateral sensing in a surface-mount device (SMD) TSOT-3L package – eliminating the need for through-hole components and aligning with modern automated assembly processes. The result is a reduced motor height, improved packaging flexibility, and optimized manufacturing workflows. The single-package device integrates a voltage regulator (2.7 to 24V operating range), a Hall effect sensor with advanced offset cancellation, and an open-drain output driver. The magnetic core’s enhanced offset cancellation system facilitates faster, more accurate, and robust processing, irrespective of temperature and stress, and includes a negative temperature coefficient to counteract the natural weakening of magnets at high temperatures. The robust latch sensor can be used in both 3-wire and 2-wire (with external resistor) configurations, with the 30mA current limit easily sufficient for maintaining safe and consistent operation in environments such as seat motors – where continuous current up to 25mA is often required. Combined with strong electrostatic discharge (ESD) protection (8kV), automatic output shut-off with self-recovery, and ASIL A functional safety readiness, the MLX92211 IMC meets the reliability requirements of modern automotive deployments.	28.08.2025 11:30:00	Aug	news_2025-09-15_18.png	\images\news_2025-09-15_18.png	https://www.melexis.com/en/news/2025/28aug2025-melexis-latch-slims-down-motor-applications	melexis.com
ReVolt Charges up Hollywood’s Clean Energy	Most production companies today rely on gasoline a...	12531	Industry News	ReVolt Charges up Hollywood’s Clean Energy	Most production companies today rely on gasoline and diesel generators to operate their movie sets. But as these become more elaborate - with enormous footprints and an expanding array of specialized electronics - energy demands have escalated, as have unwanted levels of dangerous CO<sub>2</sub> emissions. ReVolt Holdings has developed a better way to power movie sets and studio backlots by providing clean, mobile, always-on electricity. ReVolt systems power everything - from cameras, sound and lighting equipment to special effects rigs and basecamps - quietly, efficiently and with no CO<sub>2</sub> output. Diesel generators also produce "dirty" power that requires extra filtration when used in sensitive digital lighting and motion control equipment. ReVolt charging systems produce a pure sine wave profile that ensures a clean, stable power source. To ensure stable voltage levels, ReVolt adopted Vicor BCM® bus converters, DCM™ DC-DC converters, and most recently, PRM™ regulators. The BCM4414 converts and isolates 800V into a 48V at 35A bus, which the DCM3414 taps off to regulate 24V loads. The 770W/in³ BCM4414 also serves as a battery emulator, reducing the need for a conventional and bulky 48V battery. The PRM is a non-isolated buck-boost DC-DC regulator capable of converting 48V into various output voltages, with power density exceeding 2kW/in³ and 96% efficiency. Portable, clean energy is in demand today more than ever. As it imprints its power concept on the film industry, ReVolt is preparing to address a variety of new applications, from servicing natural disaster zones to providing power for construction and live events. With the trend toward eMobility and greener, more sustainable power, the relationship with Vicor - grounded in modular power delivery - is gaining momentum and setting the stage for a greener future.	27.08.2025 14:00:00	Aug	news_2025-09-15_9.jpg	\images\news_2025-09-15_9.jpg	https://www.vicorpower.com/press-room/revolt	vicorpower.com
Strengthening Supply Resilience of Key Material for Global Semiconductor Industry	Asahi Kasei will increase PIMEL™ photosensit...	12530	Industry News	Strengthening Supply Resilience of Key Material for Global Semiconductor Industry	Asahi Kasei will increase PIMEL™ photosensitive polyimide (PSPI) production capacity at its Fuji City facility in Shizuoka Prefecture, Japan. PSPI is a key material for the global electronics industry, mainly used for buffer coatings and passivation layers in semiconductor applications. By doubling its capacity by 2030, Asahi Kasei underlines its commitment to growing its Electronics business and reinforcing its position as a key supplier for the global semiconductor industry. With the global semiconductor industry entering a new growth cycle and projected to surpass US$1 trillion in revenue by the mid-2030s, as reported by consulting firm Alvarez & Marsal, Asahi Kasei has forecasted that the demand for next-generation semiconductor interlayer insulation will continue to grow rapidly at an average annual growth rate of 8%. In response to this quickly rising demand, Asahi Kasei completed the construction of a new plant producing PIMEL™ photosensitive polyimide in Fuji City, Shizuoka Prefecture, in December 2024. Since then, the company has decided to expand production in Fuji City further, doubling the 2024 capacity by 2030. This expansion is expected to significantly improve the supply resilience of essential materials in the manufacturing of semiconductors. Asahi Kasei will invest approximately ¥16 billion in this expansion.	26.08.2025 13:00:00	Aug	news_2025-09-15_8.JPG	\images\news_2025-09-15_8.JPG	https://www.asahi-kasei.com/	asahi-kasei.com
Conference on Production Technologies and Systems for Electric Mobility (EPTS)	The Electric Drives Production Conference (E\|DPC) ...	12513	Event News	Conference on Production Technologies and Systems for Electric Mobility (EPTS)	The Electric Drives Production Conference (E\|DPC) is expanding to become the Conference on Production Technologies and Systems for Electric Mobility (EPTS), taking place in Karlsruhe, Germany October 8 & 9. Join leading experts from industry and research for two days packed with high level keynotes, sound technical presentations and networking opportunities.	25.08.2025 11:00:00	Aug	news_2025-09-01_6.jpg	\images\news_2025-09-01_6.jpg	https://www.epts-conference.com/	epts-conference.com
New CEO of WBG Power Semiconductor Company	Navitas Semiconductor's Board of Directors has app...	12512	People	New CEO of WBG Power Semiconductor Company	Navitas Semiconductor's Board of Directors has appointed Chris Allexandre as President and Chief Executive Officer, effective September 1, 2025. He will also join the Company's Board of Directors. The new CEO succeeds Gene Sheridan, a Navitas founder, who will step down as President and CEO and from the Board on August 31, 2025. Allexandre brings more than 25 years of experience in the semiconductor industry. Most recently, he served in senior executive roles at Renesas Electronics, including Senior Vice President and General Manager of its Power Division from October 2023. Chris Allexandre oversaw Renesas' $2.5 billion power management business and led the pivot and execution of its power strategies toward the cloud infrastructure, automotive and industrial markets, including Renesas' acquisition and integration of Transphorm, Inc., a supplier of GaN solutions, in June 2024. Allexandre was previously Renesas' Chief Sales and Marketing Officer from 2019 to 2023. Prior to his tenure at Renesas, Navitas' new CEO held executive roles at Integrated Device Technology (IDT) (acquired by Renesas in 2019) as Senior Vice President of Sales and Marketing; at NXP Corporation as Senior Vice President, Worldwide Sales for Mass Market; and at Fairchild Semiconductor as Senior Vice President of Worldwide Sales, Marketing and Business Operations. Chris Allexandre began his career at Texas Instruments, beginning in its New College Graduate rotation program, and over 16 years in business and sales roles based in Europe and China, becoming TI's Vice President of Sales for EMEA and a member of TI's strategic leadership team in 2012. Allexandre's management experience spans analog, power, mixed-signal and digital products across cloud, industrial, mobile, consumer, telecom, and automotive markets. Chris Allexandre holds a Master of Science in Electrical Engineering from the Institut Supérieur de l'Électronique et du Numérique (ISEN) in Lille, France.	25.08.2025 10:00:00	Aug	news_2025-09-01_5.png	\images\news_2025-09-01_5.png	https://navitassemi.com/navitas-semiconductor-names-chris-allexandre-as-president-and-chief-executive-officer/	navitassemi.com
Back to School Giveaway to Empower Tomorrow’s Innovators	DigiKey announces its annual Back to School Giveaw...	12526	Industry News	Back to School Giveaway to Empower Tomorrow’s Innovators	DigiKey announces its annual Back to School Giveaway, which offers university students a chance to win products and swag, including one grand prize of a Teledyne LeCroy Power Supply unit. Five entrants will be randomly selected to win a prize package that includes products such as an Aven Tools LED lamp, a Pokit Innovations all-in-one digital tool, a Weidmüller wire stripper, an Adafruit Ladyada’s electronics toolkit, DigiKey swag and more. Plus, one grand prize winner will also receive a Teledyne LeCroy Power Supply unit. "Each year, the Back to School Giveaway is a celebration of curiosity, creativity and the bright future ahead," said Brooks Vigen, senior director of global strategic marketing at DigiKey. "DigiKey is proud to support students as they turn bold ideas into real-world innovations, and we’re excited to see how this generation will shape the technologies of tomorrow." The sweepstakes is open to any student with a university or college email address, and entries may be made in students’ local language. Submissions are open until Oct. 24, 2025, and winners will be announced around Nov. 15, 2025.	25.08.2025 09:00:00	Aug	news_2025-09-15_4.png	\images\news_2025-09-15_4.png	https://www.digikey.com/en/resources/social/back2school?utm_source=referral&utm_medium=pressrelease&utm_campaign=pressrelease	digikey.com
Collaboration on SiC Power Semiconductor Wafers	Toshiba Electronic Devices & Storage Corporation (...	12533	Industry News	Collaboration on SiC Power Semiconductor Wafers	Toshiba Electronic Devices & Storage Corporation ("Toshiba") and SICC ("SICC") have signed a memorandum of understanding (MOU) under which they will explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two companies will discuss the scope of their joint efforts and mutual support. Toshiba has an established track record in developing, manufacturing and selling SiC power semiconductors for railways, and is currently accelerating the development of SiC devices for applications including server power supplies and the automotive segment. The company aims to further reduce power losses in the devices and to improve their reliability and efficiency in future high-efficiency power conversion applications. Achieving these goals requires close collaboration with an innovator in SiC wafer technology. Collaboration with SICC, a global leader in SiC wafer development and mass production technology, is expected to drive forward optimal solutions for various applications and accelerate business expansion.	22.08.2025 16:00:00	Aug	news_2025-09-15_11.jpg	\images\news_2025-09-15_11.jpg	https://toshiba.semicon-storage.com/ap-en/company/news/news-topics/2025/08/corporate-20250822-1.html	toshiba.semicon-storage.com
RT Box Workshop in Zurich	In the workshop, you will learn modeling technique...	12514	Industry News	RT Box Workshop in Zurich	In the workshop, you will learn modeling techniques for real-time simulations using PLECS with the PLECS RT Box. You will work hands-on with hardware-in-the-loop (HIL) and rapid control prototyping (RCP) application examples. You will see that step size can be reduced to nanoseconds, even for large-scale models. In addition to the technical aspects, the workshop offers an opportunity to connect with the developers of PLECS. The required software and PLECS RT Box hardware will be provided for the workshop.	21.08.2025 12:00:00	Aug	news_2025-09-01_7.jpg	\images\news_2025-09-01_7.jpg	https://plexim.com/events/seminars/2515	plexim.com
USB-C Power Solution with Three-Level Topology	Renesas Electronics introduced the RAA489300/RAA48...	12535	Product Release	USB-C Power Solution with Three-Level Topology	Renesas Electronics introduced the RAA489300/RAA489301 high-performance buck controller designed with a three-level buck topology used for battery charging and voltage regulation in USB-C systems such as multiple-port USB-PD chargers, portable power stations, PC docking station, robots, drones, and other applications that need a high efficiency DC/DC controller. The three-level buck converter topology enabled by the new IC delivers exceptional efficiency and significantly reduces the required inductance for regulating the output voltage. Its innovative design minimizes power loss and reduces system size, making it ideal for compact, high-performance applications. The three-level topology consists of two additional switches and a flying capacitor compared to a conventional two-level buck converter. The flying capacitor reduces voltage stress on the switches, allowing designers to use lower voltage FETs with better figures of merit. The result is reduced conduction and switching losses. This topology also enables the use of a smaller inductor with peak-to-peak ripple of only about 25 percent of that of a two-level converter, enabling reduced inductor core and direct current resistance losses. The 3-Level DC-DC RAA489300/RAA489301 battery charger and voltage regulator offers superior thermal performance, which reduces cooling requirements and results in cost and space savings. This innovative approach addresses the growing demand for compact and efficient power management systems.	20.08.2025 06:30:00	Aug	news_2025-09-15_13.jpg	\images\news_2025-09-15_13.jpg	https://www.renesas.com/en/about/newsroom/new-renesas-usb-c-power-solution-innovative-three-level-topology-improves-performance-and-reduces	renesas.com

Bodo's News

1,200 V Automotive-Grade Low-Loss Diodes

GaN Technology Licensed to Accelerate U.S.-Manufactured Power Portfolio

EPCIA President appointed

Job Promotion in Solutions for Power Electronics

MicroModule Series expanded

Reference Design combines Power, Sensing, and Control for Robot Joints and UAVs – fitting in A1 Robot Motor

Win a Power Analyzer Set for your Research Lab

Vertical GaN Semiconductors

N-Channel Power MOSFETs

APEC 2026 Early Bird Registration Now Open

650 V Super Junction TOLL Package Products with Integrated Kelvin Source

Vertical GaN Architecture built on GaN-on-GaN Technology

Company Acquisition

Reed Relais switches up to 80 W

Report: Graphene in electronic Applications

Ruggedized 6 W DC/DC Converters with 8:1 Inputs

10 MHz TMR Current Sensor for Protection and Control of Wide Bandgap Power Electronics

Bosch Global Supplier Award

Reflow-suitable Package for SiC Devices in High-Power Applications

Common Mode Choke for Power Line Noise Attenuation

Long-term Contract for green Electricity Supply

100 V automotive-qualified Transistors

Vertical GaN Sample Prototypes – already in 2025!

Digital Power Joint Lab

Gate Driver simplifies SiC and IGBT Designs

Web-Based Tools for Power Design

GaN Partnership

1700 V GaN Technology for Next-Generation 800 VDC AI Data Centers

800 V Direct Current AI Data Center Power Architecture with GaN Devices

White Paper on Power Solutions for Next-Generation 800 VDC Architecture

Power-Management Solutions for scalable AI Infrastructures

800 VDC Power Architecture for AI Data Centers

Devices for 800 VDC Power Architecture

Schottky Barrier Diode combining low VF and IR

Supporting Wide Bandgap R&D

DC Power Analyzer

PwrSoC 2025 – Global Experts Discussed Miniaturization of Power Conversion

GaN Half-Bridge Gate Drivers

Christian Felgemacher appointed Director Application Engineering

300 mm GaN Program launched

40 W DC/DC Converters for demanding space-constrained Applications

Power Company opened its Italian Headquarters

Innovation Day showcases technical Innovations

Industrial Power Supply Series now also with 600 W and 1000 W Models

Wide Input DC/DC Range delivers 10 W in DIP-24 Package

Application-specific MOSFETs provide enhanced dynamic Current Sharing

Passive Components: Plant Opening in China

Tailored for Industrial Switching Applications

Collaboration on SiC Power Electronics Packages to enhance Flexibility

100 V N-channel power MOSFET

ASPICE Capability Level 2 for Next Generation Cell Monitoring System achieved

Entering the Semiconductor Industry

Dispensable Thermal Gel offers Vertical Tackiness

Groundbreaking for EMC Lab

Lift motor developed using Ferrite Magnets – without Rare Earth Materials

Current/OS Foundation joined

100 V MOSFETs deliver low Conduction Losses

Manufacturing Partner for Power Devices

Semiconductor Company appoints President and CEO

Duo of Protection Switches that support Type-C EPR 3.1 extended Power Levels

2-in-1 SiC Molded Module

LLC Half-Bridge Transformers for isolated Gate Driver Bias Supply

IGBT7 Modules for high Power Density and easier System Integration

Fast Recovery Power Rectifier Assemblies

Global Agreement to Distribute High-Energy Density Capacitors

Cleanroom opening at Malaysian Wafer Fab

Compact Power Modules for Consumer and Industrial Equipment

500 W integrated Power Supplies for High-Rel Applications

Power Supply Unit Reference Design for AI Data Centers and Servers

Commercial Launch of 200 mm SiC Materials Portfolio; ready to Manufacture at Scale

3 kA TVS Diode in Compact Surface Mount Package

MoU to develop high-performance GaN-based Inverters for Light Evs

Fabless GaN Manufacturer changes CEO

Distribution Agreement for Transformers and Coils

High-Efficiency Power Chokes

3.3 kV SiC MOSFET Lineup and Linecard

200 V Family of SuperQ-based MOSFETs

Three-Phase Sinewave Filter

SiC MOSFETs Adopted in Inverter Brick

1700 V GaN Technology for Next-Generation 800 V_DC AI Data Centers

White Paper on Power Solutions for Next-Generation 800 V_DC Architecture

800 V_DC Power Architecture for AI Data Centers

Devices for 800 V_DC Power Architecture

Schottky Barrier Diode combining low V_F and I_R