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Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

Sixteen MOSFETs in specific Package

Learn more:
nexperia.com

Product Release
2024-12-09

Nexperia launched sixteen 80 V and 100 V power MOSFETs in the copper-clip CCPAK1212 package for high power density. The copper-clip design provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices well-suited for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes application-specific MOSFETs (ASFETs) designed for AI server hot-swap functions. With top-side and bottom-side cooling options, these MOSFETs are supported by JEDEC registration. The benchmark PSMN1R0-100ASF is a 0.99 mΩ 100 V power MOSFET capable of conducting 460 A and dissipating 1.55 KW of power, yet in a CCPAK1212 package footprint that occupies 12 mm x 12 mm of board space. The PSMN1R0-100CSF offers similar statistics in a top-side cooled version. This is enabledby the internal construction of the devices. The "CC" in CCPAK1212 stands for copper clip, meaning that the power MOSFET silicon die is sandwiched between two pieces of copper, the drain tab on one side and the source clip on the other., which means that wire bonds are entirely eliminated.

Acquisition of SiC JFET Business

Learn more:
onsemi.com

Industry News
2024-12-09

onsemi announced that it has entered into an agreement to acquire the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, from Qorvo. The acquisition will complement onsemi's extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers. Additionally, the move will accelerate onsemi's readiness for emerging markets such as EV battery disconnects and solid-state circuit breakers (SSCBs). "As AI workloads become more complex and energy-intensive, the importance of reliable SiC JFETs that deliver high energy efficiency and are able to handle high voltages will continue to increase," said Simon Keeton, group president and general manager of the Power Solutions Group, onsemi. "With the addition of Qorvo's industry leading SiC JFET technology, our intelligent power portfolio offers our customers yet another solution to optimize energy consumption and increase power density."

Hot-Swap/E-Fuse

Learn more:
hmisemi.com

Product Release
2024-12-05

HMI released the HL8520E, a hot-swap/E-Fuse device designed to offer protection and power control for sensitive load circuitry. The HL8520E is designed to protect systems from input transients, shorts, and voltage spikes that could damage load circuitry, while managing power delivery to enhance reliability. With an input voltage range of 2.7 V to 16 V, it supports both low- and high-voltage systems, making it suitable for diverse applications. The device can also handle up to 20 A of output current. Featuring an integrated MOSFET with an R_DS(on) of 2.8 mΩ, the HL8520E reduces conduction losses while improving power efficiency, and thermal performance. It includes several protection features, such as over-current protection (OCP), short-circuit protection (SCP), thermal shutdown (TSD), damaged MOSFET detection, over-voltage protection (OVP), and under-voltage lockout (UVLO), safeguarding both the device and the load from electrical faults. For smoother system operation, the HL8520E allows for an external adjustable soft start, enabling controlled inrush current during startup. Additionally, the device provides configurable current limits. The response time of less than 200 ns for short-circuit protection helps detecting and mitigating fault conditions. The device comes in an LGA-26 package measuring 4 mm x 4 mm.

Donation to Charity instead of Christmas Gifts

Learn more:
vincotech.com

Industry News
2024-12-05

Vincotech has again opted to embrace the seasonal spirit of charity. In lieu of sending gifts to customers, the company is presenting 12,000 Euros to its partner in philanthropy, Plan International Germany. Donated on behalf of its workforce and customers, these funds will support a development project in Ecuador. Youngsters, and girls especially, in ten communities in the Cotopaxi and Santa Elena regions stand to benefit from this initiative. It aims to impart business, digital, and soft skills that will help get them off to a better start in working life. The project also provides health services to mothers and children. This is Vincotech's second contribution to the project. The company had staged a virtual reality challenge at the PCIM Europe trade fair in May 2024 to raise funds for Plan International Germany. Fairgoers rose to the occasion. Vincotech and its partners rewarded their efforts by pledging €15,000 to upskill young Ecuadorians and furnish health services.

SiC Partnership between Automotive OEM and Semiconductor IDM

Learn more:
st.com

Industry News
2024-12-03

STMicroelectronics and Renault Group's Ampere have entered a multi-year agreement, effective from 2026, for the supply of Silicon Carbide (SiC) power modules. The multi-year agreement is aligned with Ampere's strategy of working upstream with its partners. The two companies have worked together on the optimization of a new power module, the key element in the powerbox. The powerbox combines three SiC-based power modules, an excitation module, which provides the necessary electrical excitation to the motor or generator for controlling the magnetic field within the motor, and a cooling baseplate designed to dissipate heat from the back side of the power module, simplifying the thermal management and cooling process. It is designed for both 400 V and 800 V battery systems, with the latter allowing rapid charging from 10% to 80% in under 15 minutes.

Coupling Transmission Lines e. g. in PoE Systems

Learn more:
we-online.com

Product Release
2024-12-02

Würth Elektronik has expanded its WE-BAL series of baluns. The components for coupling symmetrical and asymmetrical transmission lines feature improved materials and manufacturing processes, and now cover wider frequency ranges from 673 MHz to 5900 MHz. In applications, such as antenna systems, audio and video devices, wireless communication systems, PoE systems, and measuring instruments, it is necessary to couple symmetrical and asymmetrical transmission lines in such a way that prevents signal loss. The SMT baluns with symmetrical impedance ranging from 50 to 200 Ω are integrated in 0603 and 0805 packages and operate with an insertion loss of up to a maximum of 2.0 dB.

Acquisition in Current Sensor Business

Learn more:
isabellenhuette.de

Industry News
2024-12-02

Isabellenhütte Heusler has acquired Rathgeber as of December 1, 2024. Both companies have a long-standing business relationship: As an external manufacturing service provider, Rathgeber was entrusted by Isabellenhütte with the punching of resistance bands, from which the ISA-WELD resistor series for current measurement is manufactured. Isabellenhütte expects to gain a strategic advantage from the acquisition. Rathgeber specializes in the production of temperature regulators for various markets. Isabellenhütte can thus supplement its product portfolio in measurement technology, expand its manufacturing expertise and strengthen its competitiveness.

Automotive-Grade SiC MOSFETs in TC3PAK Package

Learn more:
inventchip.com.cn

Product Release
2024-11-27

Inventchip Technology released four automotive-grade SiC MOSFETs in the TC3PAK package: IV2Q12080K1Z, IV2Q12040K1Z, IV3Q12035K1Z and IV3Q12021K1Z. They are rated at 1200 V with resistance values of 80 mΩ, 40 mΩ, 35 mΩ and 21 mΩ respectively. The TC3PAK package, designed for topside cooling, boasts a 125 mm² metal tab surface, significantly enhancing heat dissipation capabilities. Compared to the traditional TO-263/D2PAK package, the TC3PAK's heat dissipation area is over 200 % larger, effectively halving the thermal resistance between the case and the heatsink. This design not only improves thermal management but also facilitates a more efficient heat dissipation process. Unlike TO-263/D2PAK packages that depend on PCB for heat dissipation and conduction, TC3PAK allows direct heat conduction to a heatsink via its topside metal tab. Furthermore, the TC3PAK package is 23 % thinner, measuring under 3.6 mm in height, compared to the TO-263/D2PAK, which makes it more suitable for low profile designs. Its large lead frame can support a large die, such as a 5 mm x 6 mm die, or multiple dies, providing ample space for future power upgrades without the necessity for a new package format. The TC3PAK package is engineered for surface mounting with a top-side connection to an external heatsink and facilitates the automatic assembly of the PCB-power devices-heatsink stack.

Semiconductor Company cooperates with Automotive Tier-1 Supplier

Learn more:
rohm.com

Industry News
2024-11-26

ROHM Semiconductor and Valeo announced they are collaborating to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE™ pack to Valeo for future powertrain solutions. Valeo focuses on efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the largest one (eTrucks). ROHM and Valeo have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter. By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging. Valeo will start supplying a first series project in early 2026.

High Speed & High Power DC Electronic Load

Learn more:
itechate.com

Product Release
2024-11-22

One of the features of the IT8900G/L series high power DC electronic load from ITECH is its fast current dynamic response. Compared with its predecessor, the current rise/fall speed of this device has been increased by 3-4 times, ensuring that users are able to capture even smaller fluctuations in real time when dealing with complex load changes. Especially in scenarios that require high-speed response, such as testing server power supplies, DC/DC modules, and on-board chargers (OBCs), theIT8900G/L demonstrates its processing capabilities. The IT8906G-150-600 model can provide 0…600 A under 30 kHz dynamic band load conditions. To further optimize stability in high-frequency testing, ITECH has also introduced a low-inductance test line, which significantly reduces electromagnetic interference during rapid current changes for efficient and accurate signal transmission. The device supports load testing down to 0.075 V / 60 A and 0.75 V / 600 A with an internal resistance of 0.7 mΩ, making the IT8900G/L a test tool for fuel cells, supercapacitors, and solar cells.

"A much better Way to conduct Heat away from the Die" – especially in GaN Applications

Learn more:
q-p-t.com

Industry News
2024-11-21

QPT has just filed a patent for a way to attach dies to the heat spreaders or substrates which are typically Aluminium Nitride (AlN), which it calls qAttach™. This is said to provide "a much better way to conduct heat away from the die and also increases reliability" as the assembly process places less stress on the substrates, which is one of the biggest challenges the high-power semiconductor packaging industry faces. QPT developed this qAttach process for use with the Gallium Nitride (GaN) transistors that it uses in its electric motor control designs to enable them to handle the huge amounts of waste heat that results from using them for high power, high voltage applications and at high frequency. GaN transistors are now being made that are rated for high voltages but the die size is relatively small for high voltage transistors, which means there is less surface area to remove heat from. As a result, they are often down rated to enable them to function without overheating.qAttach solves this problem as now significantly more heat can be efficiently removed from the die so that it will not overheat. This opens up GaN to now be efficiently used for next generation, high power, high voltage applications in automotive, industrial motors and to finally deliver on the promise of low cost, high voltage GaN transistors.

600 W Open Frame Power Supply for Medical and Industrial Applications

Learn more:
murata.com

Product Release
2024-11-21

Murata Manufacturing has introduced the PQC600 open-frame AC to DC power supply, which caters to the needs of the latest medical and industrial applications, such as hospital beds, dentist chairs, medical equipment, and industrial process machinery. It offers 600 W of power within a package that is less than 1U in height and is certified to the IEC 60601-1 Edition 3 medical safety standard, which includes 2 Means of Patient Protection (MOPP) from primary to secondary, 1 MOPP from the chassis to ground and 1 MOPP from output to chassis. Additionally, the PQC600 complies with the IEC 60601-1-2 4th Edition for EMC standards, ensuring robust electromagnetic compatibility, and is suitable for use with medical devices that have Type B or Type BF applied parts. With a 600W forced-air cooling design, it achieves an efficiency of 95 % at full load. The power supply features an interleaved Power Factor Correction (PFC) and back-end synchronous rectification. Furthermore, the power supply includes a droop current sharing feature, enabling multiple units to be configured in parallel for greater power scalability.

Chief Operating Officer started in Office

Learn more:
rohde-schwarz.com

People
2024-11-21

Effective November 1, 2024, Markus Fischer, the former Executive Vice President Operations, has been appointed to the Rohde & Schwarz Executive Board. As Chief Operating Officer (COO), he will collaborate with Christian Leicher (CEO) and Andreas Pauly (CTO) to continue to keep the company on course for growth in these challenging times. As Chief Operating Officer, Markus Fischer will be responsible for most of the operative business of Rohde & Schwarz. Andreas Pauly, who joined the Executive Board as Chief Technology Officer in October 2023, will retain his primary responsibility for innovation, research and development. Managing Partner Christian Leicher will continue to head the Executive Board as President and CEO. Markus Fischer (44) joined the technology group in 2011 as Head of Corporate Material Sourcing at Munich headquarters. After another management role at Rohde & Schwarz Messgerätebau GmbH in Memmingen, he assumed overall responsibility for the group's supply chain in 2017. In July 2020, he was appointed Executive Vice President Operations, becoming a member of Corporate Management. In that role, Fischer was responsible for all Rohde & Schwarz production activities as well as the supply chain and procurement. The technology group's five production plants have a high degree of vertical integration. As Executive Vice President Operations, Fischer focused above all on improving such key aspects as efficiency, flexibility and scalability. Consequently, his division not only ensured delivery capability in times of uncertain supply chains, but also contributed substantially to the stability of Rohde & Schwarz.

Programmable Mixed-Signal ICs, Including Low-Power Device with 14-Bit SAR ADC

Learn more:
renesas.com

Product Release
2024-11-20

Renesas announced AnalogPAK ICs, including lower power and automotive-qualified devices along with the industry’s first programmable 14-bit SAR ADC (Successive-Approximation Register Analog-Digital Converter). AnalogPAK devices are part of Renesas’ GreenPAK Family of Programmable Mixed-Signal Matrix products: NVM programmable devices integrating many system functions while minimizing component count, board space, and power consumption. GreenPAK and AnalogPAK ICs deliver functional replacement of mixed-signal standard products and stand-alone discrete circuits. They also provide hardware supervisory functions for SoCs and microcontrollers. GreenPAK and AnalogPAK devices are suited for consumer electronics, computing, white goods, industrial, communications, and automotive. Using Go Configure Software Hub and the GreenPAK Development Kit, designers can create and program a custom circuit in minutes. For example, the SLG47011 AnalogPAK device includes several D/A features including programable multichannel 14-bit SAR ADC with Programmable Gain Amplifier (PGA). The SLG47011 also has user-defined power saving modes for all macrocells that enable designers to switch off some blocks in sleep mode and therefore reduce power consumption to the µA level. The SLG47011 can be used to extend the performance of, or to offload an MCUs. It can also be used in conjunction with an MCU to replace a complex analog front-end (AFE). Key functions supported by the SLG47011 include measurement, data processing, logic control and data output.

Tool-in Ceremony for Semiconductor Fab

Learn more:
samsung.com

Industry News
2024-11-18

Samsung Electronics held a tool-in ceremony for its semiconductor research and development complex (NRD-K) at its Giheung campus. About 100 guests, including those from suppliers and customers, were in attendance to celebrate the milestone. NRD-K broke ground in 2022 and is set to become a key research base for Samsung’s memory, system LSI and foundry semiconductor R&D. With its infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion (more than US-$ 14 billion) by 2030 for the complex in an area covering about 109,000 square meters within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025. NRD-K will be set up with High NA extreme ultra-violet (EUV) lithography and new material deposition equipment aimed at accelerating the development of next-generation memory semiconductors such as 3D DRAM and V-NAND with more than 1,000 layers. In addition, wafer bonding infrastructure with innovative wafer-to-wafer bonding capabilities is also planned to dock.

Three Companies partner for Solar Inverter Designs

Learn more:
mouser.com

Industry News
2024-11-18

Mouser Electronics has partnered with onsemi and Würth Elektronik to address the growing solar inverter market. onsemi's Silicon Carbide (SiC) solutions address the needs for the highest levels of efficiency, reliability, and safety while their boost and inverter power integrated modules (PIMs) anchor the grid-interface electronics. Würth Elektronik's gate drivers, sensing control, and peripheral power products complete the system. E. g. the onsemi NXH40B120MNQ1 is an EliteSiC PIM containing a dual full SiC boost stage. The Würth Elektronik WE-AGDT high-power auxiliary gate drive transformers feature unipolar and bipolar outputs, making them suitable for powering state-of-the-art SiC MOSFET gate drivers up to 6W of power as well as IGBT and power MOSFETs.

A very short Look back at electronica 2024

Learn more:
electronica.de

Event News
2024-11-15

From November 12 to 15,2024 a total of 3,480 exhibitors presented their innovations across the entire spectrum of electronics to about 80,000 visitors at the electronica trade fair in Munich, Germany. In addition to sustainability, key topics such as artificial intelligence, the future of mobility, and the development of young talent sparked discussions at the exhibition stands and at the supporting program. The equally successful SEMICON Europa took place concurrently in two of the 18 halls. The organizer, Messe München, is “delighted that the trade fair was once again held at the same high level as before the pandemic and that the atmosphere was very positive despite the challenging times”. In order to attend electronica show, which had its debut exactly 60 years before, 3,480 exhibitors traveled from 59 countries and regions, with 76 percent of them from abroad. There were around 80,000 visitors from around 100 countries and regions. The share of international visitors totaled 54 percent. After Germany, the top 10 visitor countries were: Italy, China, France, Austria, United Kingdom, Switzerland, USA, Spain, Netherlands and Poland.
Some trivia: Roland R. Ackermann, the Correspondent Editor Bavaria of Bodo’s Power Systems, had already visited the very first electronica show 60 years ago while he was delighted to greet so many friends and business friends at this year’s electronica show as well. The next electronica will take place from November 10 to 13, 2026.

GaN Design and Development Center in Ottawa, Canada

Learn more:
wise-integration.com

Industry News
2024-11-15

The French company Wise-integration, which is active in digital control of gallium nitride (GaN) and GaN ICs for power conversion, has opened its North American Design & Development Center in Ottawa, Ontario, Canada. Led by Christian Cojocaru and staffed by experts in analog and digital technology design, the center will drive the development of the company’s design portfolio for the next generations of WiseGan®. By maximizing the high-frequency capabilities of GaN without added power losses, the next generations of the two product lines are said to “enable significant reductions in system size and cost, while boosting overall conversion efficiency”. Since its launch in 2020, the fabless company has established more than 20 patent families for its two core product lines. WiseGan includes GaN power integrated circuits designed for high-frequency operation in the MHz range, integrating features that streamline implementation with digital control. WiseWare is a 32-bit, MCU-based AC/DC digital controller optimized for GaN-based power-supply architectures. The company recently announced the launch of a subsidiary in Hong Kong.

DC/DC Converters for Industrial and Railway Environments

Learn more:
cui.com

Product Release
2024-11-13

CUI announces two high-performance isolated DC/DC converters, the PRC300 and 600 series, both designed with 4.2 kV isolation to support engineers in e-mobility, railway, and industrial industries. The PRC300 series, which is UL/EN/IEC 62368-1 certified, has several special features reinforced insulation and baseplate cooling. The PRC600 series offers 600 W of power in a compact brick package and positive and negative logic options, which is well-suited for a variety of industrial and high-voltage applications. Additional features include remote ON/OFF control and output voltage trimming. The industry standard half and full brick packages both offer a high input voltage range of 180 to 400 V_DC and an operating temperature ranging between -40 and +100 °C. The converters provide several protection features, including over-current, over-temperature, over-voltage, short circuit, and input under-voltage protections. In addition, they meet EN 61373 and EN 45545-2.

Linear FET 2 MOSFET for Hot-Swap and Battery Protection

Learn more:
infineon.com

Product Release
2024-11-13

The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low R_DS(on). Infineon Technologies addresses this challenge with its OptiMOS™ 5 Linear FET 2 – a “MOSFET designed to provide the ideal trade-off between the R_DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET”. The device prevents damage to the load by limiting the high inrush current and ensures low losses during operation. Compared to the previous generation (the OptiMOS Linear FET), the OptiMOS Linear FET 2 offers improved SOA at elevated temperatures and reduced gate leakage current, as well as a wider range of packages. This allows for more MOSFETs to be connected in parallel per controller, reducing bill-of-material (BOM) costs and offering more design flexibility due to the extended product portfolio. The 100 V OptiMOS 5 Linear FET 2 is available in a TO-leadless package (TOLL) and offers a 12 times higher SOA at 54 V at 10 ms and 3.5 times higher SOA at 100 µs compared to a standard OptiMOS 5 with similar R_DS(on). The latter improvement is particularly important for the battery protection performed inside the battery management system (BMS) in case of a short circuit event. This enables high power density, efficiency, and reliability for battery protection which are used in a wide range of applications including power tools, e-bikes, e-scooters, forklifts, battery back-up units and battery-powered vehicles.

Collaboration to Advance Plug & Charge

Learn more:
vector.com

Industry News
2024-11-13

Vector and Hubject now collaborate to further advance the Plug & Charge (PnC) technology. The aim is to simplify the electric vehicle (EV) charging process. With more than 2.6 million PnC-ready vehicles already on the market and more EVs on the horizon, the partnership helps to accelerate the adoption and implementation of PnC technology. Through this collaboration, automotive OEMs and charging station manufacturers can now obtain the Hubject QA (Pre-Production) and Production Certificates via the Vector Security Manager with the latest release of the development and test tool CANoe Version 18 SP3. The Vector Security Manager is the link between the Vector tools and the OEM-specific security implementations. With it, security functions can be used uniformly in the tools. Hubject QA and Production Certificates are essential for testing EVs and Electric Vehicle Supply Equipment (EVSE) using the CANoe Test Package EV or CANoe Test Package EVSE from Vector. This integration ensures that both the vehicles and the charging stations meet the ISO 15118 standard of interoperability, conformity and market readiness. PnC offers a seamless user experience. It eliminates the need for physical cards or mobile apps to authenticate and initiate charging.

Cooperation for Development of Sensor ICs with Functional Safety

Learn more:
novosns.com

Industry News
2024-11-13

Novosense Microelectronics and Continental Automotive Technologies have signed a memorandum to enhance strategic cooperation in the development of sensor ICs with functional safety, as well as for the global integration of Novosense’s products within Continental’s worldwide platforms. Products being co-developed include those for safety functions and system reliability – from airbag triggers to battery pack monitors. Novosense is a member of the AEC and an active developer for the global automotive industry. It has implemented an extensive R&D program for the sector that leverages a system-level understanding of automotive electronics, as well as a reliable product delivery supply chain.

Automotive grade residual Current Monitoring Sensor

Learn more:
lem.com

Product Release
2024-11-12

LEM has designed an automotive grade residual current monitoring (RCM) type B sensor for bi-directional OBCs with ASIL B capabilities according to ISO26262 for transformer-less on-board chargers (OBCs). This sensor, called CDT, complies with all the relevant safety standards. The RCM type B sensor enables designers to react to the new ISO5474 Part 2 standard for AC power transfer. The standard focuses on electrically propelled road vehicles and outlines the functional and safety requirements for power transfer between the vehicle and an external electric circuit using AC. Part of a series that operates in conjunction with ISO5474 Part 1, the new standard covers conductive charging requirements for modes 2 and 3 according to IEC 61851-1, reverse power transfer through on-board standard socket-outlets or EV plugs, and voltages up to 1000V AC. The CDT detects differences in current between two points, identifying such faults as short circuits and enabling rapid isolation of faulty sections to prevent damage. LEM’s CDT sensor is suited for RCM type B for bi-directional OBCs, where residual currents are detected and monitored, including AC and DC leakage currents. Using LEM’s patented fluxgate technology the CDT sensor offers a level of accuracy of ± 0.5 mA @ 5 mA. The device also provides functions on the secured Serial Peripheral Interface (SPI) bus including dynamic fault selection, monitoring of T°C, leakage value and supply monitoring, but it also provides diagnostic functions, and it is able to work equally effectively with single-phase and 3-phase AC.

SiC Schottky Barrier Diodes for High-Voltage xEV Systems

Learn more:
rohm.com

Product Release
2024-11-12

ROHM Semiconductor announced surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models (SCS2xxxNHR; AEC-Q101 qualified) for automotive applications such as onboard chargers (OBCs), which will soon be supplemented by eight additional models (SCS2xxxN) for industrial equipment such as FA devices and PV inverters. Adopting a specific package shape, it achieves a minimum creepage distance of 5.1 mm. These products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1 mm, approximately 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high-voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing the replacement on existing circuit boards. Two voltage ratings are offered – 650 V and 1200 V – supporting 400 V systems commonly used in xEVs, as well as higher voltage systems expected to gain wider adoption in the future.

120 V/4 A Half-Bridge Gate Driver for Automotive Applications

Learn more:
nexperia.com

Product Release
2024-11-12

Nexperia introduced a series of high-performance gate driver ICs designed for driving both high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. The automotive-qualified NGD4300-Q100 is suited for electronic power steering and power converters, while the NGD4300 has been designed for use with DC/DC converters in consumer devices, servers and telecommunications equipment as well as for micro-inverters used in various industrial applications. The floating high-side driver in these ICs can operate from bus voltages up to 120 V and use a bootstrap supply with an integrated diode – features which simplify overall system design and help to reduce PCB size. They can deliver up to 4 A (peak) source and 5 A of sink current to enable short rise and fall times even for heavy loads. The gate driver has a 13 ns delay and offers a channel-to-channel delay matching of 1 ns. These delays help to minimize dead-time by maximizing switching duty-cycle. 4 ns rise and 3.5 ns (typical) fall times help to deliver higher efficiency and support high frequency and fast system control. These gate drivers accept input control signals complying with both TTL and CMOS logic levels. These ICs are fabricated using a silicon-on-insulator (SOI) process. This allows the negative voltage tolerance of the HS pin to extend to -5 V, significantly reducing the risk of damage caused by system parasitic component and unexpected spikes. The NGD4300 and NGD4300-Q100 are available in a choice of DFN-8, SO-8 and HSO-8 packages to offer engineers the flexibility to trade-off between device size and thermal performance, depending on application requirements.

Semiconductor Product Distribution Center opened in Germany

Learn more:
ti.com

Industry News
2024-11-12

Texas Instruments has opened its product distribution center in Dreieich, Germany, close to Frankfurt, Germany. This distribution center includes 9,000 square meters of space and specific automation features. It has the capacity to quickly ship up to 7,500 orders per day. Located near Frankfurt Airport, the distribution center enables faster product delivery in Europe. The pick, pack and ship process is fully automated and orders are ready to ship within 15 minutes or less. Customers in central Germany can expect same-day product delivery, while next-day delivery is available to customers in most European countries. TI has been operating in Europe since 1956.

800 V GaN Inverter with 30 kW/l Power Density

Learn more:
camgandevices.com

Product Release
2024-11-12

Cambridge GaN Devices (CGD) and IFP Energies nouvelles (IFPEN), a French public research and training organization in the fields of energy, transport and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs in a multi-level, 800 V_DC inverter. The demo delivers a power density of 30 kW/l, which is greater than can be achieved by more expensive, state-of-the-art SiC-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25 mΩ / 650 V ICeGaN ICs – 36 devices in total – in parallel. This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800 V_DC, 3-phase output, a peak current of 125 A_RMS for 10 s or 180 A_Peak and a continuous current of 85 A_RMS continuous (120 A_Peak). The improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. As GaN transistors can operate at much higher frequencies than silicon transistors, the iron losses in the motor, particularly in the case of machines with low inductances are reduced. The 3-level topology reduces EMI and enhances the reliability of the system. In terms of thermal management insulated metallized substrate boards featuring an aluminium core facilitate thermal dissipation for adequate operating temperatures, and this extends the lifespan of the system and associated GaN devices. The modular design facilitates scalability and adaptability for varying system requirements.

Facilitating SiC and GaN Power Testing

Learn more:
crea-test.com

Product Release
2024-11-12

The Italian company CREA (Collaudi Elettronici Automatizzati) – a subsidiary of Advantest Europe – presented its solution for a variety of power devices, including SiC and GaN power testing on wafer, single-die, substrate, PKG, and module, typically used in industrial and automotive applications. PCI (Probe Card Interface) technology, patented by CREA, is a high-volume manufacturing test solution designed to work seamlessly with the CREA MT tester family. This combination enables high-power static, dynamic, and short circuit testing for Si, SiC, and GaN bare dies, particularly in Known Good Die (KGD) applications. PCI hardware allows monitoring the power levels maintained by each probe card needle in real-time, allowing test engineers to predict potential Device Under Test (DUT) failures during the test phase. Whenever a device failure is predicted, the PCI can react immediately (within 300 ns) by shutting off the probe card's power supply, safeguarding the equipment hardware (probe card, instruments) and the DUT. The system supports voltages up to 10 kV with a current capability up to 15 kA.

IGBTs in several different Packages for up to 1700 V

Learn more:
microchip.com

Product Release
2024-11-12

Microchip Technology now offers its IGBT 7 devices in different packages, multiple topologies, as well as current and voltage ranges. The components are available in standard D3 and D4 62 mm packages, as well as SP6C, SP1F and SP6LI packages; they are intended for power applications in solar inverters, hydrogen ecosystems, commercial and agricultural vehicles and More Electric Aircraft (MEA). Many configurations are available in the following topologies: three-level Neutral-Point Clamped (NPC), three-phase bridge, boost chopper, buck chopper, dual-common source, full-bridge, phase leg, single switch and T-type. Devices can be provided with voltages ranging from 1200 V to 1700 V while currents range from 50 A to 900 A. Claimed to operate with a “lower on-state IGBT voltage (V_ce), improved antiparallel diode (lower V_f) and increased current capability” these components can enable lower power losses.

1200 V SiC MOSFETs in Bare Die Format

Learn more:
toshiba.semicon-storage.com

Product Release
2024-11-12

Toshiba has developed the X5M007E120, a 1200 V SiC MOSFETs with an low on-resistance of 7.2 mΩ, which is particularly suited to applications within automotive traction inverters. The device has a V_DSS of 1200 V and is rated for a drain current (I_D) of 229 A continuously, with 458 A for pulsed operation (I_{D Pulse}). These AEC-Q100 qualified devices can operate with channel temperatures (T_ch) up to 175 °C. Engineering samples are expected to ship during 2025, with mass production samples scheduled to start in 2026.

Analog and Mixed-Signal Platform

Learn more:
onsemi.com

Product Release
2024-11-11

onsemi introduced the Treo Platform, an analog and mixed-signal platform built with Bipolar-CMOS-DMOS (BCD) process technology on an 65 nm node. This platform provides the foundation for a range of power and sensing solutions from the manufacturer including high-performance and low-power sensing, high-efficiency power management, and purpose-built communications devices. Using this single, scalable solution, users can accelerate product development for existing applications, and respond to emerging market opportunities. The Treo Platform features a modular, SoC-like architecture with a set of ever-evolving IP building blocks that make up the compute, power management, sensing, and communications subsystems. It offers digital processing capabilities and "better analog IP performance". With these capabilities, the platform can deliver local intelligence and compute for flexible configuration, as well as improve performance and accuracy in end applications. Additionally, the platform supports "the industry's widest voltage range of 1-90 V and operating temperatures up to 175 ° C", which allows engineers to integrate a range of low-to-high power functionality. Initial product families built on the Treo Platform are sampling now, including voltage translators, ultra-low-power AFEs, LDOs, ultrasonic sensors, multi-phase controllers, and single-pair Ethernet controllers. Through 2025, the semiconductor manufacturer will deliver new family members including: high performance sensors, DC/DC converters, automotive LED drivers, electrical safety ICs, connectivity, and more.

Motor Suite for simplified Motor Control Development

Learn more:
infineon.com

Product Release
2024-11-08

Infineon Technologies launched its Motor Suite dubbed ModusToolbox™, which is a solution of software, tools and resources for developing, configuring and monitoring motor control applications. With its ability to support different motor types, the solution intends to enable developers to bring high-performance motor control applications to market quickly and efficiently. The suite supports industrial, robotics, and consumer applications such as home appliances, HVAC, drones, and light electric vehicles. The suite streamlines development and testing, providing real-time parameter monitoring for relevant insights into motor performance, efficiency, and reliability. This enables engineers to identify issues, optimize designs, and enhance overall functionality. It also offers signal analysis, and customized status monitoring. ModusToolbox Motor Suite features automatic detection and recognition of supported boards and kits, real-time visualization and monitoring of motor control related signals. It also provides pre-configured algorithms and real-time monitoring of critical system parameters. Additionally, the solution offers algorithms to increase the control robustness across many motor types and applications. It currently includes out-of-the-box support for Infineon’s XMC7000 microcontrollers and will further expand its capability to include industrial MCUs, with PSOC™ Control integration confirmed for upcoming releases. It provides a graphical user interface for motor control development and an adaptable, hardware-abstracted motor control core library.

PLECS Conference 2025

Learn more:
plexim.com

Event News
2024-11-08

Join the next PLECS Conference about Embedded Code Generation. The speakers are engineers from industry, research, and academia who will present current applications in this field. Engage with experts and network with over 100 participants in the discussion and networking area. Besides that, take the opportunity to exchange ideas with Plexim developers. The conference language will be English. Note that this is an on-site only event. The participation fee will be 700.00 Euros or Swiss Francs (incl. 8.1% VAT) and can be paid by invoice or credit card. The Plexim staff is excited to welcome you again in Zurich, on March 4 and 5, 2025!

Galvanically isolated Gate Drivers provide Protection for IGBTs and SiC MOSFETs

Learn more:
st.com

Product Release
2024-11-07

STMicroelectronics' STGAP3S family of gate drivers for silicon-carbide and IGBT power switches provide a reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, withstanding 9.6 kV transient isolation voltage (VIOTM) with 200 V/ns common-mode transient immunity (CMTI). Suited for motor drives for industrial applications such as air conditioning, factory automation, and home appliances the drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters and solar inverters. The STGAP3S product family includes different options with 10 A and 6 A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches. The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage. The driver's integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. The available device variants allow a choice of 10 A sink/source and 6 A sink/source drive-current capability with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins.

1200 V IGBTs for Automotive and Industrial Applications

Learn more:
rohm.com

Product Release
2024-11-07

ROHM has developed automotive-grade AEC-Q101 qualified 4^th Generation 1200V IGBTs for vehicle electric compressors and HV heaters as well as industrial inverters. The current lineup includes four models - RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR - in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants - SG84xxWN - with plans to further expand the lineup in the future. In case of a short circuit these devices provide a withstand time of 10 µs (T_j=25 °C) together with low switching and conduction losses while maintaining a withstand voltage of 1200 V. Its TO-247-4L package features 4 terminals, can accommodate an effective voltage of 1100 V in a 'Pollution Degree 2 environment' by ensuring adequate creepage distance between pins. High-speed switching is achieved by including a Kelvin emitter terminal, resulting in even lower losses. In fact, when comparing the efficiency of the new TO-247-4L packages with conventional and standard products in a 3-phase inverter, loss is reduced by about 24% compared to standard products and by 35% over conventional products.

New Sales Office and Service Center in Sydney, Australia

Learn more:
magna-power.com

Industry News
2024-11-07

Magna-Power Electronics has opened Magna-Power Electronics ANZ in Sydney, Australia. The establishment of the Sydney office enhances Magna-Power's local presence, providing dedicated support for existing and prospective customers in the region. With a product line ranging from 1.25 kW to over 10 MW and more than 400,000 product configurations, the company's solutions are well-suited to meet the varied power requirements of key Australian applications, including electrolyzers, defence, mining, water treatment, industrial power electronics, transportation, among many others. Leading the new office are industry veterans David Champion and Brian Chapman, who bring over 60 years of combined experience in electrical engineering and technology. The investment in the Sydney office is said to underscore the company's commitment to providing regional services to a wider customer base in the growing APAC market.

100 V Automotive-Grade Devices for Automotive LiDAR

Learn more:
innoscience.com

Product Release
2024-11-07

Innoscience has added two 100 V automotive-grade GaN devices. The company's INN100W135A-Q (R_DS(on),max = 13.5 mΩ) and smaller package INN100W800A-Q (R_{DS(on),max = 80} mΩ) are both certified to AEC-Q101 and optimized for LiDAR as well as for high power density DC/DC converters, and Class D audio applications in the automotive sector. The INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13 mm x 1.63 mm and 0.9 mm x 0.9 mm respectively, offer advantages in terms of size and power efficiency. Both devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Q_g and Q_oss are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m.

60-V Variant of Power MicroModule Series

Learn more:
we-online.com

Product Release
2024-11-06

There's another generation of MagI³C-VDMM power modules from Würth Elektronik: The input voltage range gives the new MicroModule a resistance to voltage transients on the 48 V bus. The adjustable output voltage ranges from 0.85 to 6 V with currents up to 0.3 A. The extended input voltage range of the Variable Step Down MicroModule from 3.5 to 60 V now covers bus voltages from 5 to 48 V, opening up applications from Point of Load (PoL) to direct 48 V bus voltage connection. So the MagI³C-VDMM series is suited as a replacement for linear regulators, for example in the power supply of interfaces, sensors, microcontrollers, microprocessors, DSPs and FPGAs. Operational areas include industrial, testing and measurement technology, medical devices and point-of-load DC/DC applications. Its efficiency of up to 86 percent supports "cool design", allowing its use in a temperature range from -40 to +105 °C. To save energy, the power module can be set to sleep mode using an additional pin, and the quiescent current is up to 3 µA. The integrated sync feature allows multiple Micromodules to synchronize to an external frequency while simultaneously meeting the requirements of EMC standard EN55032/CISPR32 Class B for radiated and conducted interference with verified filter combinations. The selectively controllable "spread spectrum" feature improves the EMC behavior.

Strategic Partnership for Onboard Chargers and more

Learn more:
nexperia.com

Industry News
2024-11-05

Nexperia has entered into a strategic partnership with Kostal, which will enable it to produce wide bandgap devices that more closely match the exacting requirements of automotive applications. Under the terms of this partnership, Nexperia will supply, develop, and manufacture WBG power electronics devices which will be designed-in and validated by Kostal. The collaboration will initially focus on the development of SiC MOSFETs in topside cooled QDPAK packaging for onboard chargers in electric vehicles. "Nexperia has been a trusted supplier of silicon components to KOSTAL for many years and is delighted to enter into this strategic partnership that will now extend to wide bandgap devices", according to Katrin Feurle, Senior Director and Head of SiC Discretes & Modules. "KOSTAL will assist in validating our devices in its charging applications, thereby providing us with the type of invaluable 'real-world' data that will allow us to further enhance their performance".

Automotive-Grade High-Side Switches for BCMs and ZCUs

Learn more:
novosns.com

Product Release
2024-11-05

Novosense has announced a range of high-side switches for driving traditional resistive, inductive, and halogen lamp loads in automotive body control modules (BCM) as well as large capacitive loads commonly found in the first-level and second-level power distribution within zone control units (ZCU). At time of launch, the NSE34 and NSE35 families includes 26 single-, dual- and quad-channel devices developed for operation across 11 separate load currents intervals (11 A to sub-2 A). These devices have an R_ds(on) resistance range from 8 mΩ to 140 mΩ and feature diagnostic and protection functions such as over-current protection and over-voltage clamping protection. All devices in the two families are fully compliant with multiple automotive standards, including AEC-Q100, AEC-Q100-006, AEC-Q100-012 Grade A, ISO7637, ISO16570 and CISPR25-2021 Class 5.

8.5 kW AI Data Center Power Supply Powered by GaN and SiC

Learn more:
navitassemi.com

Product Release
2024-11-05

Navitas Semiconductor has announced "the world's first 8.5 kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98% efficiency", which is specifically intended for applications in next-generation AI and hyperscale data centers. The AI-optimized 54 V output PSU complies with Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications and utilizes high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs configured in 3-phase interleaved PFC and LLC topologies. The PSU's shift to a 3-phase topology for both the PFC and LLC (vs. 2-phase topologies used by competing PSUs) enables "the industry's lowest ripple current and EMI". Furthermore, the PSU is claimed to reduce the number of GaN and SiC devices by 25 % compared with the nearest competing system, which reduces the overall cost. The PSU has an input voltage range of 180 to 264 V_AC, a standby output voltage of 12 V, and an operating temperature range of -5 oC to 45 oC. Its hold-up time at 8.5 kW is 10 ms, with 20 ms possible through an extender.

1700 V GaN Switcher IC replaces 3 SiC Transistors

Learn more:
power.com

Product Release
2024-11-04

Power Integrations introduced a new member of its InnoMux™-2 family of single-stage, independently regulated multi-output offline power supply ICs. According to the company the device features "the industry's first 1700 V gallium nitride switch, fabricated using the company's proprietary PowiGaN™ technology". The 1700 V InnoMux-2 IC supports 1000 VDC nominal input voltage in a flyback configuration and achieves over 90 % efficiency in applications requiring one, two or three supply voltages. Each output is regulated within one percent accuracy, eliminating post regulators. The GaN device replaces SiC transistors in power supply applications such as automotive chargers, solar inverters, three-phase meters and a wide variety of industrial power systems. Radu Barsan, vice president of technology at Power Integrations, said, "Our rapid pace of GaN development has delivered three world-first voltage ratings in a span of less than two years: 900 V, 1250 V and now 1700 V. Our new InnoMux-2 ICs combine 1700 V GaN and three other recent innovations: independent, accurate, multi-output regulation; FluxLink™, our secondary-side regulation (SSR) digital isolation communications technology; and zero voltage switching (ZVS) without an active-clamp, which all but eliminates switching losses."

Oscilloscope and Generator Lines

Learn more:
rigol.com

Product Release
2024-11-04

Rigol Technologies introduced its DG5000 Pro Series Generators and DHO/MHO5000 Series Oscilloscopes. The DHO/MHO5000 Series brings more oscilloscope performance, while the DG5000 Pro generators are arbitrary waveform generators with higher figures of merit. Combining 12-bit resolution with up to 1 GHz bandwidth and 500 Mpts record length, up to 8 channels and mixed-signal configurations, the DHO/MHO5000 Series High-Resolution Oscilloscopes are available with configurations offering 4 or 8 analog input channels and either 500 MHz or 1 GHz bandwidth. These instruments deliver 4 GSamples/s maximum real-time sampling, with the 4-channel units providing that rate across all channels. For mixed-signal measurement applications, the MHO5000 Series models combine 4 or 6 analog input channels with 16 digital channels and similar bandwidth choices as the DHO5000 models. For additional utility, an integrated function generator is an available option for the 4-channel MHO5000 models. Offering 16-bit vertical resolution, up to 500 MHz maximum output frequency, 2.5 GSamples/s maximum sample rate and a 0.8 ns (800 ps) square wave rise time, the DG5000 Pro provides high-frequency waveforms and generates complex sequence generations. The DG5000 Pro Series delivers a maximum arbitrary waveform length of 128 Mpts/channel while supporting multi-pulse output, a variety of analog and digital modulation types, and IQ digital modulation. Sequence Mode is an option and enables the playback of intricate pattern segments, with looping of up to 512 cycles. Sequence Mode also enables complex functions like repeat, wait, event, and jump.

Next Generation of GaN Power Discretes

Learn more:
infineon.com

Product Release
2024-11-04

Infineon Technologies launched a family of high-voltage discretes, the CoolGaN™ Transistors 650 V G5. Target applications for this new product family range from consumer and industrial switched-mode power supplies (SMPS) such as USB-C adapters and chargers, lighting, TV, data center and telecom rectifiers to renewable energy and motor drives in home appliances. The latest CoolGaN generation is designed as a drop-in replacement for the CoolGaN Transistors 600 V G1, however, with improved figures of merit. Compared to key competitors and previous product families from Infineon, the CoolGaN Transistors 650 V G5 offer up to 50 percent lower energy stored in the output capacitance (E _oss), up to 60 percent improved drain-source charge (Q _oss) and up to 60 percent lower gate charge (Q _g) improving both hard- and soft-switching applications. This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case. The members of the high-voltage transistor product family offer a wide range of R _DS(on) package combinations. Ten R _DS(on) classes are available in various SMD packages, such as ThinPAK 5x6, DFN 8x8, TOLL and TOLT. In the future, CoolGaN will transition to 12-inch production.

8-Channel Driver and Photo Receiver Amplifier IC

Learn more:
apexanalog.com

Product Release
2024-10-31

Apex Microtechnology announced two devices in their Precision IC product line: an 8-channel driver and a photo receiver amplifier IC. The devices provide supply voltages of up to 350 V and feature multi-channel architectures. Typical applications are e. g. piezoelectric transduction, capacitive actuation and LED drivers. The AIC1513 is a rigid general purpose high voltage driver IC with 8 high voltage push-pull outputs to drive capacitive and resistive loads such as piezoelectric transducers, electroluminescent devices and micro-mechanical actuators. The maximum operating voltage is 300V, and each output can handle currents up to 40 mA. The device has been designed for harsh industrial applications. The AIC1638 is an integrated receiver amplifier designed for high-sensitivity photo diodes used in applications like light barriers, smoke detectors, light curtains etc. Filtering out ambient light and amplifying the detected pulses from a photo diode, the conditioned signals are used for driving a current mirror output stage. Implementing an integrated polarity protection, the device can be used in a multiplexed configuration, simplifying the wiring of the application. It is suited for light sensing applications ranging from a few millimeters to several meters.

The next Generation of HIL Compatible Digital Twin

Learn more:
abb.com

Industry News
2024-10-30

ABB has partnered with Typhoon HIL to create the DriveLab ACS880 HIL compatible digital twin. This collaboration is intended to bring a realistic, scalable, and easy to use real-time simulation platform to a wide range of industrial applications. DriveLab ACS880 is the next generation of Hardware-in-the-Loop (HIL) simulation technology. It is specifically tailored and geared towards simplifying the integration of ABB variable speed drives (VSD) systems. It will enable users to test and validate the system via a test automation capability which is a key component of top-tier customer support. HIL simulation is used to validate both component and system-level behavior of the drives and drive systems in real-world applications ranging from compressors, conveyers, and cranes to large scale energy storage, microgrids and more. The DriveLab ACS880 serves as a digital twin, integrating the control hardware, firmware, and software of the ACS880 drives with Typhoon HIL's high-fidelity digital models. These digital models virtually represent the ACS880 drive's hardware, including its connected components, such as the grid, motors, filters, batteries, protection devices, and the electro-mechanical elements.

The World's thinnest Silicon Power Wafer

Learn more:
infineon.com

Industry News
2024-10-29

Infineon Technologies has reached a breakthrough in handling and processing the thinnest silicon power wafers ever manufactured, with a thickness of only 20 µm and a diameter of 300 mm, in a high-scale semiconductor fab. The ultra-thin silicon wafers are only a quarter as thick as a human hair and half as thick as current state-of-the-art wafers of 40-60 µm. According to Infineon this will "significantly help increase energy efficiency, power density and reliability in power conversion solutions for applications in AI data centers as well as consumer, motor control and computing applications". Halving the thickness of a wafer reduces the wafer's substrate resistance by 50 percent, reducing power loss by more than 15 percent in power systems, compared to solutions based on conventional silicon wafers. For high-end AI server applications, where growing energy demand is driven by higher current levels, this is particularly important in power conversion: Here voltages have to be reduced from 230 V to a processor voltage below 1.8 V. The ultra-thin wafer technology boosts the vertical power delivery design, which is based on vertical Trench MOSFET technology and allows a very close connection to the AI chip processor, thus reducing power loss and enhancing overall efficiency. This was achieved by applying a unique wafer grinding approach, since the metal stack that holds the chip on the wafer is thicker than 20 µm. The technology has been qualified and applied in Infineon's Integrated Smart Power Stages (DC/DC converter) which have already been delivered to first customers.

Strategic Technology Partnership with McLaren Formula E Team

Learn more:
tdk.com

Industry News
2024-10-29

TDK Corporation and McLaren Racing have started a strategic multi-year, technology partnership to combine their technological expertise and build a high-performance future through the cutting-edge electric vehicle (EV) motorsport platform of Formula E, and ever-growing esports field. TDK has formed a partnership with the NEOM McLaren Formula E Team and McLaren Shadow F1 Sim Racing Team. As a technology partner, TDK are using motorsport and racing as a testbed to advance technologies that could help shape the future of EV, gaming and beyond. According to the companies involved, "Formula E serves as a testbed for cutting-edge EV technology that has the potential to influence the future general EV market". TDK aims to extend this technology collaboration approach with McLaren to the gaming field as well.

Early Bird Registration Now Open for the 40th Annual APEC 2025 in Atlanta

Learn more:
apec-conf.org

Event News
2024-10-29

Early bird registration is now open for the 40th Annual Applied Power Electronics Conference (APEC), running March 16-20 at the Georgia World Convention Center in Atlanta. The APEC 2025 conference and exposition gathers power electronics engineers, academics and students from all over the world to learn about the latest research, technologies and products. Early bird registration ends Jan. 13, 2025. Full registration includes access to the APEC Technical Program. Comprising nearly 800 paper presentations, sessions and seminars, the conference offers a broad scope of content: APEC Plenary Session (visionary talks by distinguished speakers), Technical Sessions (lecture sessions and dialogue sessions based on peer-reviewed papers), Industry Sessions (presentations showcasing work in all areas of power electronics), Professional Education Seminars (in-depth seminars on practical aspects of power electronics), Debate – formerly RAP – Sessions (expert panelists identify three hot topics for friendly debate) as well as Exhibitor Presentations (exhibitor companies highlight new products and technologies). Also included in the full registration package is admission to the APEC 2025 Exposition and Special Events. The 2025 exposition will gather nearly 300 exhibitors to the sold-out exhibit floor. With its lively, interactive trade show environment, APEC 2025 offers participation in such events as the MicroMouse contest, the FIRST Robotics demonstration and the Wednesday evening Social Event celebrating APEC's 40th anniversary.

Call for Proposals for Innovation Award & Young Engineer Award

Learn more:
semikron-danfoss.com

Industry News
2024-10-28

The Semikron Danfoss Innovation Award and the Semikron Danfoss Young Engineer Award are given for outstanding innovations in projects, prototypes, services or novel concepts in the field of power electronics in Europe, combined with notable societal benefits in form of supporting environmental protection and sustainability by improving energy efficiency and conservation of resources. The prizes are awarded in cooperation with the European ECPE Network. With the award Semikron Danfoss wants to motivate people of all ages and organizations of any legal status to deal with innovations in power electronics, a key technology of the 21st century, in order to improve environmental protection and sustainability by energy efficiency and conservation of resources. The Semikron Danfoss Innovation and Young Engineer Prizes 2025 will be awarded in the frame of the ECPE Annual Event in April 2025. A single person or a team of researchers can be awarded. Semikron Danfoss Innovation Award includes prize money of EUR 10,000, while the Semikron Danfoss Young Engineer Award for researchers who have not yet completed their 30th year of age includes prize money of EUR 3,000. The award targets at projects, prototypes, services and novel concepts developed in Europe, which did not yet appear on the market, which are used in a novel application, or which form an absolute novelty, and therewith fulfil the requirement to be extraordinary and remarkable. To apply for the awards own applications as well as proposals from third parties are welcomed. The deadline for submission ends on 31.01.2025.

3D Power Design and Manufacturing Symposium (3D-PEIM) 2025

Learn more:
3d-peim.org

Event News
2024-10-25

The PSMA Packaging and Manufacturing Committee announce its Fifth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM-20235). 3D-PEIM will take place July 8–10, 2025 at the National Renewable Energy Laboratory (NREL) in Golden, Colorado. The symposium is designed for any engineer or manager involved in the design and manufacturing of high-density power sources using 3D technology. It will feature key speakers and technical sessions focused on increasing the power density and performance of power solutions. Plenary presentations will include: "Beyond 2030: Powering the E-Powertrain with High-Value and High-Efficiency Power Conversion Systems - A BorgWarner Perspective", presented by Harsha Nanjundaswamy, BorgWarner, "Advanced Packaging to System Integration - Trends and Challenges", presented by Devan Iyer, IPC and "The Power Delivery and Energy Storage Challenge in Advanced Packaging", presented by Subramanian Iyer, University of California Los Angeles. Attendees are also invited to tour the power electronics facilities of the National Renewable Energy Laboratory.

Caroline Pannier to take over as Exhibition Director of electronica

Learn more:
electronica.de

People
2024-10-24

With effect from December 1, 2024, Caroline Pannier will become the new Exhibition Director of electronica. She succeeds Katja Stolle, who will in future take over as Executive Director of Technology Fairs at Messe München from Dr. Martin Lechner, who is retiring in December. Caroline Pannier has worked at Messe München in the field of electronics trade fairs for almost 13 years. The business graduate with an LL.M in technology law has successfully demonstrated her expertise there, among other things, as Exhibition Director of productronica and most recently as Deputy Exhibition Director of electronica. "As the most important international meeting place for the industry, electronica brings together innovations and trends, and provides new stimulus. I am very much looking forward to working with my team and in close cooperation with the industry to further develop the trade fair and set new trends," says Caroline Pannier about her new role.

Zero-flux DC Current Transducer selected for technical Facelift and Renovation Program

Learn more:
danisense.com

Industry News
2024-10-23

For a for technical facelift and renovation program of its North Area (NA), CERN has selected the DM1200 zero-flux DC current transducer (DCCT) from Danisense for use in the CERN-designed POLARIS power converters. Comments Miguel Cerqueira Bastos, Section Leader in the Electrical Power Converter group at CERN: "The DM1200 is a current output DCCT and, as such, it provides a current signal proportional to the measured current, which in this case is the output current of the POLARIS power converter. We convert the output current from the DCCT into a voltage signal, then digitize it, and use it in a digital current loop to precisely control the current in the magnets of the NA experimental lines." Based on Danisense's ultra stable closed loop flux gate technology, the DM1200 current transducer benefits from very low offset and ultra low drift. The device was successfully evaluated by CERN for use with DC currents up to 2kA with a linearity error less than 1 ppm. With its specific design it provides high resolution for precise monitoring, reliable and consistent performance, and ruggedness for durability. Danisense's DM1200 DCCT has been chosen for the new POLARIS power converter series because of its excellent balance between performance and cost at primary currents as high as 2kA.

EMI Suppression in the Low-Frequency Range directly on the Busbar

Learn more:
we-online.com

Product Release
2024-10-22

With the WE-OEFA-LFS ferrite, Würth Elektronik has released an oval-shaped ferrite ring for interference suppression at low frequencies. Thanks to its individual shape, the ferrite ring is able to slide over busbars for interference suppression. Its MnZn core material enables it to suppress low-frequency interference. The main application area for the new ferrite is electric vehicles. The AEC-Q200-certified WE-OEFA-LFS, with an operating temperature range of -40 to 105 °C, is designed for high-current applications and the frequency range from 1 to 100 MHz. This enables the ferrite to suppress electromagnetic interference in battery management systems, inverters, on-board chargers, cable harnesses and many other applications. The latest interference suppression ferrite in Würth Elektronik's portfolio measures 15.6 × 65.4 × 35.4 mm³, while the cable or busbar it encloses can measure 43 × 13 mm².

Global Distribution Agreement regarding Ideal Switch Products

Learn more:
menlomicro.com

Industry News
2024-10-22

Menlo Microsystems (Menlo Micro), a company claiming to be "responsible for bringing to market the greatest electronic component innovation since the transistor with its Ideal Switch® technology", announced a global distribution agreement with DigiKey. Under the terms of the agreement, DigiKey becomes a franchised distributor for worldwide marketing and sales of Menlo Micro's Ideal Switch products.

Collaboration to expand Consulting Services

Learn more:
consulting.liesabeths.de

Industry News
2024-10-22

Foxy Power announced a partnership with DL Consulting. This collaboration is based on technological business development paired with industry-wide market analyses to enable faster success in the market. By combining the expertise of both companies, it will allow for superior consulting experience and will give the common customer base access to the specialist from the industry. In its consulting services DL Consulting specializes on wide bandgap solutions like SiC and GaN including market research, power electronics design, acquisition services, go-to-market strategies and advisory to institutional investors. The company will deliver its know-how and services to Foxy Power's customer base to enable a better customer journey. Foxy Power, an advocate for startups as well as other companies at the forefront of disruptive technologies by delivering worldwide business development, sales, and strategy services. Driving the concept of product value maximization, Foxy Power enhances manufacturers' sales outreach, emphasizing an application-centric approach.

Quick charging EVs from Household Power Outlets with 99% Efficiency

Learn more:
izm.fraunhofer.de

Industry News
2024-10-21

On the EnerConnect project, researchers at Fraunhofer IZM are testing bidirectional blocking gallium nitride (GaN) transistors to design a system that could be used with the next generation of active converters and rectifiers. The hardware removes the need for a separate conversion stage and can achieve record 99% efficiency. As part of the EnerConnect project funded by Germany's Ministry of Education and Research, scientists at the Fraunhofer Institute for Reliability and Microintegration IZM and the Technical University of Berlin have teamed up with their industry partners Delta Electronics Inc., BIT GmbH, and Infineon Technologies AG to produce a system with bidirectional blocking GaN transistors. These transistors bring substantial benefits in terms of power density and efficiency and promise to make charging electric vehicles from commonplace home sockets much more effective. The buck-boost converter that the researchers are working on has never yet played much of a role in power electronics, as it would have been far too complex with conventional components. It can work with higher or lower input voltages. Current practice for electric vehicles is to have active rectifiers operating at high voltages. The new circuit currently being worked on at Fraunhofer IZM would allow the voltage to be lower, in turn reducing the switching losses in the transistor. The researchers are working towards a target switching frequency of 300 kHz, which would allow power density to be ramped up to 15 kW per liter – a full 800% over the chargers currently in the market.

AEC-Q200 Compliant, Automotive Grade Multilayered Varistor Series

Learn more:
bourns.com

Product Release
2024-10-17

Bourns announced its Model BVRA Series AEC-Q200 compliant, automotive grade multilayered varistors. These low voltage varistors feature transient energy absorption due to improved energy volume distribution and power dissipation. Designed specifically for use in automotive circuits requiring surge protection, the new series can also be applied to protect other integrated circuits and components such as power supplies, entertainment electronics as well as CAN, LIN and Flexray-based modules. The Model BVRA Series is available with working voltages from 5.5 to 85 VDC and provides a response time of less than 0.5 ns to help ensure prompt energy diversion during transient events. Offered in a range of compact 0402, 0603, 0805 and 1206 SMD packages, the new varistors have an insulator overcoat designed to help enhance efficiency and streamline integration. In addition, these models meet the IEC 61000-4-5 standard, and deliver stable leakage current for a high reliability, consistent overvoltage protection solution.

300 W Power Supplies in 3" x 5" Packages

Learn more:
tracopower.com

Product Release
2024-10-17

TRACO Power announced TXO 300, a compact 300 W AC/DC Power supply in an 3" x 5" open-frame construction. The TXO line specifically focuses on industrial power supplies. With an efficiency of up to 92 % these models are designed to meet the ErP directive (< 0.3 W no load power consumption). Features include internal EN55032 class B filter, as well as EMC characteristics dedicated for applications in industrial/automation and test & measurement fields. While the input range is 85-264 V_AC it is full load convection cooled from -20 °C to +50 °C, and protection class II prepared. The supply units offer 3000 V_AC reinforced I/O isolation, an internal EN55032 class B filter, short circuit and overvoltage protection. They are EN 61000-3-2 compliant and according to IEC/EN/UL 62368-1 safety-approved.

Electronic Fuses (eFuse ICs) for HV Power Management

Learn more:
toshiba.semicon-storage.com

Product Release
2024-10-17

Toshiba Electronics has launched two additional electronic fuses (eFuse ICs) named TCKE903NL and TCKE905ANA, which are reusable, thereby reducing maintenance costs and recovery time for equipment repairs, and support various functions to protect power supply line circuits. The eFuses are suited for a wide range of power management applications while operating with a switch ON resistance of typically 34 mΩ and an output current of up to 4.0 A. The products are suited for electronic slew rate control and power supply line circuit protection in industrial applications such as servers, professional kitchen equipment and more. The TCKE9 series of 25 V input voltage eFuse ICs offers two product types: an auto-retry type that allows the eFuse IC to automatically recover the circuit itself, and a latch type that is recovered by an external signal. Two different clamping voltage levels are available, i.e. 3.8 V and 5.7 V. The current limit and voltage clamp functions of the TCKE9 series protect the circuit against overcurrent and overvoltage conditions, including over temperature and short-circuit protection features to protect the circuit by immediately shutting off when abnormal heat is generated in the circuit or an unexpected short-circuit condition occurs. As Toshiba intends to obtain IEC 62368-1 certification, the international safety standard for ICT and AV equipment, the eFuse ICs will also simplify and accelerate certification testing process of the end equipment. The TCKE9 series is available in a thin and compact WSON8 package measuring 2.0 mm × 2.0 mm x 0.8 mm.

AC/DC Flyback Controllers

Learn more:
nexperia.com

Product Release
2024-10-17

Nexperia introduced a series of AC/DC flyback controllers. The NEX806/8xx and NEX8180x are designed for GaN-based flyback converters in devices such as power delivery (PD) chargers, adapters, wall sockets, strip sockets, industrial power and auxiliary power supplies, and other AC/DC conversion applications requiring high power density. The NEX806xx/NEX808xx are quasi-resonant/multi-mode flyback controllers which operate from a V_CC range between 10-83 V, while the NEX81801/NEX81802 are adaptive synchronous rectifier controllers. These ICs can be used in combination with Nexperia's NEX52xxx PD controllers and other discrete power devices to deliver a turn-key flyback converter solution that optimizes the current sense voltage level and PFM mode, reduces standby power, and achieves high efficiency across the entire load range. The primary side controller can be used to drive a silicon MOSFET or GaN transistor directly. These ICs employ the TSOT23-6 flip-chip package and provide an over temperature protection (OTP) function as well as additional protection features.

98 % Efficiency at 158 kW/l: Automotive-grade Power Modules deliver 48 V in 800-V EVs

Learn more:
vicorpower.com

Product Release
2024-10-16

Vicor has released three automotive-grade power modules for 48V electrical vehicle systems, which are claimed to "deliver industry-leading power density, and support automotive OEMs and tier one production in 2025". The modules named BCM®6135, DCM™3735 and PRM™3735 use AEC-Q100 certified Vicor-designed ICs and have completed the PPAP process with automotive customers. Operating with a power density of 158 kW/l the BCM6135 is a 98 % efficient 2.5 kW BCM bus converter which converts 800 V from the traction battery to 48 V to provide a safety extra-low voltage (SELV) power supply for the vehicle. The BCM6135 internally provides the isolation between high voltage and low voltage which creates a significant reduction in terms of space required for the DC/DC conversion. The bidirectional rapid current transient response rate of 8 MA/s allows the BCM6135 to replace a 48 V battery - by serving as a virtual 48 V battery in the xEV vehicle and reducing vehicle costs by up to $100 and the vehicle mass by up to 25 kg. The DCM3735 2.0 kW DCM DC/DC converter transforms an unregulated 48 V input with a power density of 300 kW/l into a regulated 12 V output, which can be trimmed within a range of 8 – 16 V. The PRM3735 is a 2.5 kW PRM regulator for 48 V power that is 99.2% efficient with 260 kW/l power density. When used as a part of the 48 V zonal architecture, the DCM3735 can be mounted remotely to create a local 12 V supply in a vehicle zone. This application method allows the PDN designer to effectively support 12 V loads while achieving up to 90 % of the cost and weight savings that come from transitioning to a 48 V bus. These modules can be arranged in over 300 configurations.

AC programmable Power Sources

Learn more:
lambda.tdk.com

Product Release
2024-10-15

The GENESYS™ AC (GAC) and GENESYS™ AC PRO (GAC-PRO) series of 2 kVA and 3 kVA rated programmable AC power sources from TDK-Lambda are claimed to provide the highest power density for a fully featured programmable AC power source with a 1U chassis height. They offer the ability to allow AC, DC, or combined AC+DC operation while allowing full-rated power and current in DC modes, as well as advanced functions such as waveform generation and harmonics analysis as standard. The GENESYS AC PRO also includes real-time analog control functionality necessary for more complex test scenarios, such as hardware in the loop (HIL). Other applications include automated test equipment, avionics airborne equipment, aircraft electrical power, defence (RTCA, Boeing, Airbus Standards), automotive, e-mobility, and power source testing. 2 kVA and 3 kVA units may be user-combined for additional power and to provide multiple phase outputs. The front panel controls can be made through the use of a capacitive touch display. Multiple languages are catered for, including, Chinese, English, French, German, Japanese, Korean, and Spanish. As standard, LAN, USB, RS232, RS485, and Analog Programming / Monitoring are provided, with optional IEEE / GPIB. The included remote GUI software allows the user full control, sequence programming, plus the option to use pre-programmed test standards for common IEC, aerospace, and marine tests.

SiC Company receives Funding and more to invest $ 2.5 Billion in the US

Learn more:
wolfspeed.com

Industry News
2024-10-15

The U.S. Department of Commerce and Wolfspeed have signed a non-binding preliminary memorandum of terms (PMT) for up to $ 750 million in proposed direct funding under the CHIPS and Science Act. In addition, a consortium of investment funds have agreed to provide Wolfspeed an additional $ 750 million of new financing. Together these investments support Wolfspeed's long-term growth plans and bolster US domestic production of silicon carbide to power clean energy systems. In addition, Wolfspeed expects to receive $1 billion of cash tax refunds from the advanced manufacturing tax credit under the CHIPS and Science Act (section 48D), giving the com¬pany, in total, access to up to $ 2.5 billion of expected capital to support the expansion of silicon carbide manufacturing in the United States. According to Gregg Lowe, CEO of Wolfspeed, this is "not just about growth for Wolfspeed - it's about driving technological advancement that powers the future." These proposed funds, which are expected to be received upon milestone achievements in the coming years, would enable Wolfspeed to complete its multi-billion-dollar greenfield U.S. capacity expansion plan. In addition to the proposed direct funding, Wolfspeed intends to benefit from the U.S. Treasury Department Investment Tax Credit of up to 25% of the qualified capital expenditures primarily related to its construction and installation of equipment at The John Palmour Manufacturing Center for Silicon Carbide in Siler City, NC and comple¬tion of the Mohawk Valley Fab M-Line West Expansion in Utica, NY.

Combining Silicon and Silicon Carbide in a Power Module for EVs

Learn more:
infineon.com

Product Release
2024-10-15

Infineon Technologies is introducing the HybridPACK™ Drive G2 Fusion, trying to establish "a new power module standard for traction inverters in the e-mobility sector". The HybridPACK Drive G2 Fusion is a plug'n'play power module that implements a combination of silicon and SiC technologies. One of the main differences between silicon and SiC in power modules is that SiC has a higher thermal conductivity, breakdown voltage and switching speed, making it more efficient, but also more expensive than silicon-based power modules. With the new module, the SiC content per vehicle can be reduced, while maintaining vehicle performance and efficiency at a lower system cost. The company claims that "system suppliers can realize nearly the system efficiency of a full SiC solution with only 30 percent SiC and 70 percent silicon area". The HybridPACK Drive G2 Fusion module features up to 220 kW in the 750 V class over the entire temperature range from -40 °C to +175 °C.

Capacitors for tough Conditions

Learn more:
rutronik24.com

Product Release
2024-10-14

Rutronik now offers the C4AQ-P capacitors from Kemet for use in particularly challenging environments. They function reliably in a temperature range of -55 °C to +125 °C and a voltage range of 450 V_DC to 1600 V_DC. In addition, the capacitors have self-healing capabilities. They are AEC-Q200 qualified, THB (temperature-humidity bias) tested and are suited for applications in the automotive industry, in renewable energy systems or in energy storage systems. They are available in the capacitance range of 4.7 nF to 8.2 nF with an expected operating life at 125 °C of 4000 hours. Cable spacing is 27.5 mm to 52.5 mm.

GaN power ICs with Autonomous EMI Control and loss-less Sensing

Learn more:
navitassemi.com

Product Release
2024-10-14

Navitas announced GaNSlim™, a new generation of integrated GaN power ICs integrating drive, control, and protection, with integrated EMI control and loss-less current sensing, all within a high thermal performance proprietary DPAK-4L package. Additionally, with a startup current below 10 µA, GaNSlim devices are compatible with industry-standard SOT23-6 controllers and eliminate HV startup. Integrated features such as loss-less current sensing eliminate external current sensing resistors, while over-temperature protection increases system robustness and auto sleep-mode raises light and no-load efficiency. Autonomous turn-on/off slew rate control improves efficiency and power density while reducing external component count, system cost and EMI. The DPAK package enables 7 °C lower temperature operation versus conventional alternatives, supporting high-power-density designs with ratings up to 500 W. Target applications include chargers for mobile devices and laptops, TV power supplies, lighting, etc. Devices in the NV614x GaNSlim family are rated at 700 V with R_DS(ON) ratings from 120 mΩ to 330 mΩ and are available in versions optimized for both isolated and non-isolated topologies.

3D Power Design and Manufacturing Symposium (3D-PEIM) 2025

Learn more:
3d-peim.org

Event News
2024-10-14

The PSMA Packaging and Manufacturing Committee is pleased to announce its Fifth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM-20235). 3D-PEIM will take place July 8–10, 2025 at the National Renewable Energy Laboratory (NREL) in Golden, Colorado. The Symposium is designed for any engineer or manager involved in the design and manufacturing of high-density power sources using 3D technology. It will feature key speakers and technical sessions focused on increasing the power density and performance of power solutions.
Plenary presentations will include:
- Beyond 2030: Powering the E-Powertrain with High-Value and High-Efficiency Power Conversion Systems - A BorgWarner Perspective (Presenter: Harsha Nanjundaswamy, BorgWarner)
- Advanced Packaging to System Integration - Trends and Challenges (Presenter: Devan Iyer, IPC)
- The Power Delivery and Energy Storage Challenge in Advanced Packaging (Presenter: Subramanian Iyer, University of California Los Angeles)
Attendees are also invited to tour the world-class power electronics facilities of the National Renewable Energy Laboratory.

125 V High-Side Gate Driver: Protection by Disconnecting

Learn more:
infineon.com

Product Release
2024-10-10

In battery-powered applications such as motor drives and SMPS, the power supply architecture often requires that a module can be disconnected from the main supply rail when a fault occurs in that module. High-side disconnect switches (e. g. MOSFETs) can prevent a load short circuit from affecting the battery. Infineon Technologies has now introduced the EiceDRIVER™ 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault. The device is said to "provide fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities". The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package and includes overcurrent protection, adjustable current setting threshold, time delay and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions. The 1EDL8011 has a operating voltage range of 8 V to 125 V and a gate sinking current of up to 1 A, while the off-mode quiescent current is 1 µA.

Partnership to improve Wireless Power with Gallium Nitride Power Semiconductors

Learn more:
infineon.com

Industry News
2024-10-10

Infineon Technologies announced a partnership with Canada-based AWL-Electricity, a pioneer in MHz resonant capacitive coupling power transfer technology. Infineon provides AWL-E with CoolGaN™ GS61008P allowing the development of advanced wireless power solutions, enabling new ways to solve power challenges in various industries. The partnership combines Infineon's gallium nitride (GaN) technology with AWL-E's MHz resonant capacitive coupling power transfer system, achieving industry-benchmark wireless power efficiencies. Infineon's GaN transistor technology offers highest efficiency and highest power density while operating at highest switching frequencies. This enables AWL-E to increase its system lifetime, reduces downtime and operating costs, and improves ease-of-use for consumers. In the automotive sector, the technology enables a new level of interior experiences and seat dynamics. In industrial systems, it provides near-unconstrained levels of design freedom, such as for automated guided vehicles or robotic applications. Additionally, the technology allows for a fully sealed system design, eliminating the need for charging ports which contributes to reducing global consumption of batteries.

BMS Solutions based on 100 V Bi-directional GaN Technology

Learn more:
innoscience.com

Product Release
2024-10-10

Innoscience Technology has launched another generation of battery management system (BMS) solutions based on VGaN™ technology. With no parasitic body diode and bidirectional control, one single bi-directional (VGaN) device from Innoscience is claimed to be able to "effectively replace two traditional MOS Silicon pairs". The VGaN series brings these features to Over Voltage Protection (OVP) and BMS applications. A 48 V/180 A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design adopts the company's latest 100 V VGaN product, the INV100FQ030A, which is packaged in a 4 mm x 6 mm² FCQFN and offers a maximum on-resistance of 3.2 mΩ. No heat sink is required with a maximum temperature rise of less than 50°C. The 16-string charging and discharging battery protection system uses the controllable bidirectional conduction and cut-off features of VGaN, enabling four operational states: normal charging and discharging, charging protection, discharging protection, and sleep mode. With 16 VGaNs it is said to be possible to replace 18 pairs of Silicon MOSFETs (36 in total). This 48 V/18 0A high-side BMS solution is suited for home batteries, portable charging station, e-scooters, e-bikes etc., optimizing battery life and safety through efficient charge and discharge control. It reduces temperature rise and system costs while ensuring a compact, portable design.

Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection

Learn more:
littelfuse.com

Product Release
2024-10-08

Littlefuse announced the SMFA Asymmetrical Series Surface-Mount TVS Diode, which is claimed to be "the first-to-market asymmetrical TVS solution specifically designed to protect Silicon Carbide MOSFET gates from overvoltage events. The SMFA Asymmetrical Series is engineered specifically for the unique gate protection requirements of SiC MOSFETs. Unlike traditional solutions that require multiple Zener or TVS diodes, the SMFA Series protects against ringing and overshoot phenomena in gate drive circuits using a single component. The devices are suited for AI and data center power supplies, EV infrastructure power system and industrial equipment power supplies.

High Frequency GaN Inverter Demonstrator for Automotive

Learn more:
q-p-t.com

Industry News
2024-10-08

QPT wins a grant for a new Project called VERDE to develop a high frequency, 400V/60kW GaN inverter demonstrator for automotive use that will help demonstrate that GaN is now superior to SiC or Silicon. This is funded by the UK's Advanced Propulsion Centre (APC) and is designed to help accelerate early-stage technologies to market that will support the shift to net-zero automotive. The other company in the APC Project is RAM Innovations Ltd. This demonstrator features high frequency switching up to 1MHz to enable dramatic savings in waste, weight and power costs in the drive system. Key to this is QPT's pure sign wave output that reduces harshness, noise, and vibration to improve reliability and reduce power consumption. The traction inverter market for EVs was estimated at $17.93bn in 2023 and is projected to reach around $73.08bn by 2032, a CAGR of 16.90% according to Precedence Research. Currently half of the world's electricity is used by electric motors: QPT's technology could reduce their electricity use by 10% which would be a significant reduction in CO₂ production.

Finalists are Selected for PSMA's Inaugural Global Energy Efficiency Award

Learn more:
psma.com

Industry News
2024-10-08

PSMA announces the selection of finalists under consideration for its prestigious "Global Energy Efficiency Award." The award will be presented to the winner during next year's Applied Power Electronics Conference (APEC) in Atlanta, March 16-20, 2025, as part of PSMA's 40^th anniversary celebration. The award highlights PSMA's long-standing tradition of supporting companies making critical energy efficiency improvements to reduce global climate change. Three "Global Energy Efficiency Award" finalists were announced on Energy Efficiency Day, Oct. 2^nd. Beyond energy conservation, the judging panel evaluated the finalists based on their total potential impact on the power electronics industry, whether through volume shipments or by social outcomes.

Silicon Capacitor Production Line opened in France

Learn more:
murata.com

Industry News
2024-10-04

Murata Manufacturing has opened production line for silicon capacitors at its site in Caen, France. Manufactured on a 200-mm mass production line the silicon capacitors can be used in demanding applications such as implantable medical systems, telecommunication infrastructures, and mobile phones. The products produced in the 200-mm line will primarily target the mobile handset market by delivering capacitors in extremely compact sizes, with thicknesses as low as 50 µm.

Shaping the Future of Heat Control Solutions

Learn more:
thermalmanagementexpo-europe.com

Event News
2024-10-01

Thermal Management Expo Europe is taking place in Stuttgart, Germany, from 3-5 December 2024. This is a unique opportunity to explore cutting-edge thermal management technologies, materials, and solutions critical to today's fast-evolving industries, from automotive and electronics to energy and aerospace. This year's expo will feature innovative products and solutions for heat dissipation, cooling, and temperature regulation, as well as live demonstrations of breakthrough thermal technologies. Network with industry leaders at the receptions and attend the free conference where technical experts will tackle the latest advancements in thermal management materials and strategies. Find out more and register for your free pass at

AC Programmable Power

Learn more:
lambda.tdk.com

Product Release
2024-09-30

TDK introduced the TDK-Lambda brand GENESYS™ AC (GAC) and GENESYS AC PRO (GAC-PRO) series of 2 kVA and 3 kVA rated programmable AC power sources. With a 1U chassis height, the GAC and GAC-PRO offer a higher level of DC functionality than other members of this family – with the ability to allow AC, DC, or combined AC+DC operation. The models allow full-rated power and current in DC modes as well as functions such as waveform generation and harmonics analysis as standard. The PRO model also includes real-time analog control functionality necessary for more complex test scenarios, such as hardware in the loop (HiL). Other applications include automated test equipment, avionics airborne equipment, aircraft electrical power, defence (RTCA, Boeing, Airbus Standards), automotive, e-mobility, and power source testing. The company’s parallel system provides characteristics comparable with that of a single power supply. 2kVA and 3 kVA units may be user-combined for additional power and to provide multiple phase outputs. The front panel controls can be made through the use of a capacitive touch display, providing increased robustness over mechanical switches. Multiple languages are catered for, including, Chinese, English, French, German, Japanese, Korean, and Spanish. As standard, LAN, USB, RS232, RS485, and Analog Programming/Monitoring are provided, with optional IEEE/GPIB. The included remote GUI software allows the user full control, sequence programming, plus the option to use pre-programmed test standards for common IEC, aerospace, and marine tests. The devices are safety-certified to IEC/EN/UL 61010-1 and comply with IEC/EN 61204-3.

Current Sensors for Use in DAQ Systems with integrated Burdon Transistor

Learn more:
danisense.com

Product Release
2024-09-30

Available from Danisense is a range of current transducers with voltage output, designed to streamline the workflow for engineers utilizing data acquisition (DAQ) systems. These devices integrate the burden resistor directly into the current transducer, mitigating the risk of miscalculations. The DS, DM and DL series current transducers with voltage output from Danisense offer users options for precise measurements of AC and DC currents from 55 A up to 3000 A. The products are well-suited for a wide range of applications, particularly in harsh environments and high-temperature settings such as e-mobility, solar, and wind energy sectors. They offer a 1 V or 10 V BNC voltage output connection, an aperture of up to 68 mm) and very low linearity errors. All products are housed in full aluminum casings and incorporate the Fluxgate technology. For data acquisition users usually employ a variety of instruments, extending beyond traditional oscilloscopes. These instruments often lack a direct current sensor. Consequently, when users require a precision current sensor, they must also use a burden resistor to facilitate the connection. However, this often poses a significant challenge: users need to align the specifications of the current sensor with those of the burden resistor. The complexity of these specifications leaves considerable room for error.

Power Semiconductors now supplied from 12-inch Wafers

Learn more:
mitsubishielectric.com

Industry News
2024-09-30

Mitsubishi Electric Corporation announced that its Power Device Works' Fukuyama Factory has begun large-scale supply of power semiconductor chips made from 12-inch silicon wafers for the assembly of semiconductor modules. The Si power semiconductor modules will initially be used in consumer products. Going forward, Mitsubishi Electric expects to contribute to green transformation by providing a stable and timely supply of semiconductor chips to meet the growing demand for energy-saving power electronics devices in various applications. The Fukuyama Factory is playing a key role in Mitsubishi Electric's medium-term plan to double its wafer processing capacity for Si power semiconductors by fiscal year 2026 compared to five years earlier. The factory operates on a total floor area of approximately 46,500m² on three floors.

Current-compensated Chokes for Vertical PCB Mounting

Learn more:
schurter.com

Product Release
2024-09-27

Schurter is launching a vertically mountable choke family for PCBs with nanocrystalline cores and "very high inductances". Due to the compact dimensions, the integration of the filter elements on printed circuit boards is an ideal solution. The DKCV-1 choke series is particularly suitable for applications that require high attenuation. Due to the vertical choke arrangement, they also require little space on the PCB. All variants of the DKCV-1 family have the same footprint on the PCB. The chokes are suited for applications like switching power supplies, industrial, medical, laboratory and test equipment. The chokes are designed for currents up to 10 A and voltages up to 300 V_AC or 450 V_DC and have ENEC, cUR and UR approvals. For higher power applications, the DKIV-1 series of chokes is available with rated currents up to 50 A.

MLCCs with Voltage Rating up to 2000 V

Learn more:
samsungsem.com

Product Release
2024-09-26

Samsung Electro-Mechanics is releasing a range of MLCCs (multi-layer ceramic capacitors) that meet growing demand for high rated voltage solutions within the electric vehicle industry. These 1812 inch (4.5 mm x 3.2 mm) X7R MLCCs are availble with capacitances in the range of 2.2 nF to 470 nF with a voltage rating up to 2000 V_DC. These MLCCs comply with AEC-Q200, the global standard for stress resistance that all passive electronic components must meet for use within the automotive industry. Suitable for use in operating temperatures up to 125 °C, all of the new MLCCs from Samsung Electro-Mechanics offer RoHS and REACH compliance.

DC EMC Filter for High Power EV Charging Applications

Learn more:
emisglobal.com

Product Release
2024-09-26

EMIS announces the availability of the MF620 DC EMI Filter range specially designed for high power electric vehicle charging applications. The DC EMI filters suppress undesirable electrical disturbances in power lines, specifically for EV DC fast charging. The MF620 filter range addressing both common mode and differential mode interference meets the safety requirements of IEC/EN 61851-23 Electric Vehicle Conductive Charging System and UL 2202 Electric Vehicle Charging System Equipment. This high current dual-stage DC EMI/EMC filter series is intended to operate up to 1600 V_DC at current ratings of 150 A to 1600 A with the option to select the parallel capacitors. Designed with specific capacitance and inductance values to target unwanted frequencies and in addition to EV Charging the filters may be used for Industrial Automation, Renewable Energy Systems, Telecommunication Equipment and Power Supplies.

Ideal Diode Protection Switch with LPS for USB-C Applications

Learn more:
aosmd.com

Product Release
2024-09-25

Alpha and Omega Semiconductor released its AOZ1390DI-01 and AOZ1390DI-02 ideal diode protection switches. The devices are well-suited for multi-port Type-C PD 3.0 current sinking applications up to 100 W, such as high-performance laptops, personal computers, monitors, docking, and other Type-C port applications. Designed to enhance USB Type-C efficiency and safety, the AOZ1390DI features Limited Power Source (LPS) functionality. For multi-port ORing or parallel power applications, the LPSB pin of the AOZ1390DI can be connected to the DISB pin of one or more AOZ1390DI devices at other ports. This LPS feature works as a watchdog, disabling the port when another port in the same system is faulty or damaged. In doing so it prevents excessive power flow through the device from other faulty or damaged ports, making the AOZ1390 suitable for multi-port Type-C Power Delivery (PD) applications. The integrated back-to-back MOSFET is claimed to deliver "the industry's lowest ON resistance (18 mΩ typical) and highest SOA to safely handle high currents and a wide range of output capacitances on V_OUT". The input operating voltage range of the AOZ1390DI is between 3.3 V and 23 V, and both V_IN and V_OUT terminals are rated at 30 V absolute maximum with the capability to support up to 8 A switch current.

1200 V SiC Schottky Barrier Diodes

Learn more:
toshiba.semicon-storage.com

Product Release
2024-09-25

Toshiba expanded its silicon carbide diode portfolio with ten 1200 V Schottky barrier diodes (SBDs). The TRSxxx120Hx series, comprising five products housed in TO-247-2L packages and five in TO-247 packages, helps designers improve the efficiency of industrial equipment, including photovoltaic (PV) inverters, electric vehicle (EV) charging stations, and switching power supplies. By implementing an enhanced junction barrier Schottky (JBS) structure, the TRSxxx120Hx series allows a forward voltage (V_F) of 1.27 V (typ). The merged PiN-Schottky incorporated into a JBS structure reduces diode losses under high current conditions. The TRS40N120H of the new series accepts a forward DC current (I_F(DC)) of 40 A (max) and a maximum non-repetitive peak forward surge current (I_FSM) of 270 A, with the maximum case temperature (T_C) of all devices being +175 °C. Combined with the lower capacitive charge and leakage current, the products help improve system efficiency and simplify thermal design. For instance, at a reverse voltage (V_R) of 1200 V, the TRS20H120H diode housed in the TO-247-2L package provides a total capacitive charge (Q_C) of 109 nC and reverse current (I_R) of 2 µA.

Meeting future Energy Demands

Learn more:
ttieurope.com

Industry News
2024-09-24

TTI IP&E – Europe is supplying Mean Well power components, including the very latest DHP-1UT-B(HV) mounting rack power shelf, to support electronics engineers designing and building the next generation of renewable and hydrogen energy systems. "EU Environmental regulations require 45% of Europe's energy generation to come from renewable sources by 2030," says Markus Lorenz, Director Industry Marketing, Industrial, TTI Europe. "To achieve this, green energy generated from wind turbines and solar panels must be stored efficiently. Hydrogen is also expected to play a major part in the transition towards a more sustainable future as using hydrogen power is the most efficient way to transport and store energy with higher density and over a longer time frame without losses." The Mean Well DHP-1UT-B(HV) mounting rack power shelf for standard 19" cabinets enables a reliable power supply in a modular design and is ideal for applications including electrolysis, distributed power architecture and EV charging stations.

4th Generation of SiC MOSFETs for up to 1200 V

Learn more:
st.com

Product Release
2024-09-24

STMicroelectronics has introduced its fourth generation STPOWER silicon carbide MOSFET technology. While serving the needs of both the automotive and industrial markets, the technology is particularly optimized for traction inverters. These SiC MOSFET devices, which will be made available in 750 V and 1200 V classes, are said to "improve energy efficiency and performance of both 400 V and 800 V EV bus traction inverters, bringing the advantages of SiC to mid-size and compact EVs". The new generation SiC technology is also suitable for a variety of high-power industrial applications, including solar inverters, energy storage solutions and datacenters, significantly improving energy efficiency for these growing applications. Qualification of the 750 V class of the fourth generation SiC technology platform is already completed, and ST expects to complete qualification of the 1200 V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750 V and 1200 V will follow, allowing designers to address applications operating from standard AC-line voltages up to high-voltage EV batteries and chargers. The average die size of Generation 4 devices is 12-15% smaller than that of Generation 3, considering an R_DS(on) at 25 °C.

Module Provider supports local Sports Team

Learn more:
vincotech.com

Industry News
2024-09-24

Vincotech has extended its fruitful cooperation with TSV Haching München into the upcoming season. The company has been a main sponsor and an active supporter of the club for two years now. Vincotech's backing for the local volleyball team echoes the company's philosophy. Committed to nurturing its ties to the community and championing the spirit of partnership at work and at play, Vincotech company sees its values reflected in this sport and in the aspirations of TSV Haching München's team of young international athletes.

Research: Isolating Piezoelectric DC/DC Converters Without Transformers

Learn more:
cea.fr

Industry News
2024-09-24

Building on its earlier breakthroughs introducing a new way of converting electrical power using piezoelectric resonators and developing a dual-bridge piezoelectric resonator converter, the technology research institute CEA-Leti has paved the way to isolating piezoelectric converters without transformers. The topology of dual-bridge isolated piezoelectric resonator converter (DB-IPRC) provides isolation using two independent piezoelectric resonators. The improved version of the DC/DC converter significantly improves efficiency, while maintaining the converter isolation principle. The results were reported in a paper, noting that "for a 200 V to 120 V conversion, the converter shows an efficiency of 96.2% with the inductive assisting circuit, 94.3% with the piezoelectric one and 87.4% without any assisting circuit. The (piezoelectric resonator) assisting circuit offers a gain in efficiency over a smaller operating range than the inductance, but leads to a flatter converter." According to CEA-Leti the use of piezoelectric resonators instead of inductors in power conversion "will lead to a dramatic reduction in the size of power converters." The research facility claims that the "results make it possible to extend this type of compact conversion to isolated converters." So this type of converter is said to be now compatible with a much wider range of applications, such as TVs, phones, tablets and electrical tools. The technology research institute says that in power conversion, piezoelectrics operate at high frequencies, greater than 100 kHz, "with no limits in terms of input power" enabling it to reach power levels of several hundred watts. The range of applications is therefore expected to be very broad, with most converters having a rated power of less than 100 W.

Medical Power Supplies meet CF Requirements

Learn more:
advancedenergy.com

Product Release
2024-09-23

Advanced Energy has developed the NCF150 series of high-isolation, low-leakage current AC/DC power supplies that enable medical equipment designers to meet the cardiac floating (CF) requirements of the IEC 60601-1 medical safety standard using off-the-shelf products. Type CF is the most stringent medical electrical safety classification and is essential for medical products that may come in direct contact with the heart, including dialysis machines, cardiac-related systems and platforms for electrosurgery. The SL NCF150 series delivers a maximum output power of up to 150 W and offers voltages of 12 V, 15 V, 19 V, 24 V and 48 V. An optional 5 V standby and 12 V fan output are also available. All units in the SL NCF150 series have a patient leakage current below 10 µA, feature EMI Class B, 2 MOPP isolation and 5 kV defibrillator pulse withstand capabilities. SL NCF150 power supplies accept a universal input of 85 to 264 V_AC, operate with a full-load efficiency greater than 90% and feature protection against overvoltage, overload, overtemperature and short-circuit conditions as standard. This is the first release of the CF rated family and will be followed by higher power models launching soon.

Working together for Biodiversity with Electronics and AI

Learn more:
we-online.com

Industry News
2024-09-20

"How can we counteract the decline in biodiversity?" This question was discussed extensively at DLD Nature, which took place in September in Munich, Germany. At the conference and for the first time, Würth Elektronik presented in the tech talk with new cooperation partner, Hula Earth, a deep-tech start-up that specializes in the real-time monitoring of biodiversity. Their presentation was titled "Electronics for Innovation in Nature Protection." For real-time measurement, Hula Earth uses solar-powered BioT sensors that continuously collect various biodiversity-relevant data and transmit it via a wireless network. This also works in remote forest areas. The results are combined with satellite data, analyzed using artificial intelligence, and integrated into a user-friendly platform. Würth Elektronik and Hula Earth are now working together to optimize the handmade prototypes of the BioT sensors so that they can be produced efficiently in large quantities. Würth Elektronik is supporting the startup in a variety of ways including support in terms of EMC safety, energy management, functionality, scalability, and energy efficiency as well as prototyping and testing. Additionally, Würth Elektronik provides design-in support, including for circuit board design, interface planning, and the communication software.

Hall-Effect Dual Latch Sensor

Learn more:
melexis.com

Product Release
2024-09-19

Melexis adds the MLX92253 to its Hall-effect dual latch portfolio. This sensor offers two independent signal tracks for minimal jitter as well as consistent 90° phase shift regardless of magnet pole pitch. This enables accurate speed & direction ECU calculation as well as direct transfer across multiple platforms. It is suited for DC motors and encoders used in a wide range of embedded applications, including automotive, alternative mobility, consumer and industrial. The MLX92253 distinguishes itself by featuring two hall plates, one Z axis and one X axis, with two independent signal tracks. It also has a common magnetic center, which ensures a consistent 90° phase shift (quadrature) between the two speed outputs, independent of the magnet pole pitch. It features a chopping frequency of 500 kHz, an operating voltage range from 2.7 V to 5.5 V, a working temperature of -40 °C to 150 °C and an output state feedback during start-up, which can be utilized to convert the two outputs into inputs during start-up. This allows a microcontroller to retrieve the previous state of the MLX92253 before power-down, ensuring that no movement is missed. The device is available in a TSOT23 package and on request as engineering samples in a VA package.

Research: Lithium-Metal Battery with Solid Electrolyte achieves 1070 Wh/L

Learn more:
solidify-h2020.eu

Industry News
2024-09-19

As the coordinator of the H2020 SOLiDIFY consortium, imec, together with 13 European partners, announces the development of a high-performance lithium-metal solid-state battery. The prototype battery pouch cell, manufactured by imec in the battery assembly lab at EnergyVille, Belgium, features a unique "liquid-to-solid" processed solid electrolyte, jointly developed by imec and the partners. It boasts an energy density of 1070 Wh/L, compared to 800 Wh/L for state-of-the art lithium-ion batteries. The manufacturing process, which is said to be cost less than €150 per kWh while being adaptable to existing lithium-ion battery production lines, paves the way for commercially viable solid lithium batteries for electromobility. The high energy density was achieved by combining a high-capacity composite cathode, separated from a thin lithium metal anode by a thin solid electrolyte separator (50 µm), which resulted in a compact battery cell stack. In addition, the consortium overcame mechanical strength and cathode impregnation challenges to increase the cell's charge rate to 3 hours and lifetime to 100 cycles. Compared to liquid electrolytes, the thermally stable solid cell had a reduced flammability, improving safety. The application of nanometer-thin protective coatings enabled the use of cobalt-lean NMC cathodes, reducing environmental impact while providing higher capacity. Next steps include further upscaling of this high-performance battery technology.

N-Channel MOSFETs for 40 – 100 V

Learn more:
rohm.com

Product Release
2024-09-19

ROHM has released N-channel MOSFETs – RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB – featuring ON-resistances that are suited for several automotive applications, including motors for doors and seat positioning, as well as LED headlights. Offered in voltage ratings of 40 V, 60 V, and 100 V, the new products incorporate a split-gate structure to achieve low ON-resistance. All models are qualified under the AEC-Q101 automotive reliability standard. Design engineers can select from among three package types, depending on the application. For space-constrained sets like ADAS, the compact DFN2020Y7LSAA (2.0 mm × 2.0 mm) and HSMT8AG (3.3 mm × 3.3 mm) packages fit well. For automotive power applications, the widely used TO-252 (DPAK) package (6.6 mm × 10.0 mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package. P-channel products are also scheduled for future release.

Design and Service Center in the Greater Boston Area

Learn more:
advancedenergy.com

Industry News
2024-09-19

Advanced Energy has opened a design and service center in Wilmington, MA. The facility will focus on the development of advanced power technologies for semiconductor, industrial and medical applications. Combining laboratory and office space, the center will be the workspace for up to 50 employees. It supports AE's rapid growth strategy by enabling the launch of leading technology platforms, reducing time-to-market for new products, and ensuring smooth transitions to high-volume manufacturing. The design and service center features labs as well as office space with a gym and cafeteria. It is located near top schools like MIT and Northeastern.

Insights into Design Challenges of Motor Control

Learn more:
mouser.com

Industry News
2024-09-19

Mouser Electronics announces an eBook offering a deep dive into motor control, and with the push to achieve a more sustainable future, the challenge is to maximize efficiency while striking a balance with costs. In the eBook dubbed "Mastering Motor Control Design" Mouser offers electrical design engineers of all levels of experience practical information on system parameters and product selection. Topics include selecting the correct type of motor for the application, driver and microcontroller options, motor power components, motor isolation and current sensing, and more. The eBook also includes convenient links to select motor control products.

US Funding for WBG Power Projects

Learn more:
ncsu.edu

Industry News
2024-09-19

The White House and U.S. Department of Defense announced the first year of funding, totaling $19 million, for four additional projects for the Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Microelectronics Commons Hub, headed by North Carolina State University. The first of the four selected projects is "High Permittivity Dielectrics to Increase the Performance of III-Nitride Transistors" and led by NC State. It will increase the efficiency and radiation hardness of advanced transistors used in avionics and satellite applications. Partners include MACOM, EPC Space, Lockheed Martin, University of Florida, NASA and Sandia National Laboratories. The second project is named "Transition Readiness for NITride Rf Overmatch (T/R NITRO)" and led by MACOM. It will deliver advance prototypes of high frequency transistors and circuits for use in electronic warfare, radars, and 5G/6G telecommunications. The partners include NC State, Adroit Materials and the Naval Research Laboratory. The third project is about "Advanced High Voltage Silicon Carbide Switches". Led by GE Aerospace it will push the development of 6.5 to 10 kV planar field-effect transistors (FETs) into a low-volume production environment and develop 6.5 to 10 kV Superjunction (SJ) devices. The partners include Coherent, NC State, Stony Brook University, University at Albany, Naval Research Laboratory, DEVCOM and N.C. A&T State University. The fourth project covers "Advanced Power Switches Using UWBG Gallium Oxide". Led by Kyma Technologies it will advance the state-of-the-art in gallium oxide high voltage switching devices by producing power diodes and power transistors capable of blocking up to 10 kV, and make available the epilayers, devices, and composite substrates to the DoD and community at large through the CLAWS hub. The partners include NC State, University of California at Santa Barbara, Modern Microsystems, the Air Force Research Laboratory, Naval Research Laboratory and GE Aerospace.

Strategic Alliance regarding Semiconductor Ecosystem in India

Learn more:
analog.com

Industry News
2024-09-18

Tata Group and Analog Devices announced a strategic alliance to explore potential cooperative manufacturing opportunities. Tata Electronics, Tata Motors, and Tejas Networks signed a Memorandum of Understanding (MoU) with ADI to enhance strategic and business cooperation, explore opportunities for semiconductor manufacturing in India, and use ADI's products in Tata applications like electric vehicles and network infrastructure. The companies also agree to have strategic roadmap alignment discussions. As previously announced, Tata Electronics is investing in its own facilities by building India's first fab in Dholera, Gujarat with a total investment of $11 billion. In addition, Tata Electronics will be investing another $3 billion in a greenfield facility in Jagiroad, Assam for the assembly and testing of semiconductor chips. Tata Electronics and ADI intend to explore opportunities to manufacture ADI's products in Tata Electronics' fab in Gujarat and OSAT in Assam. Tata Motors and ADI intend to explore opportunities for engagement in electronics hardware components for energy storage solutions and power electronics in both commercial and passenger vehicle businesses. Tejas Networks and ADI intend to explore opportunities for engagement in electronics hardware components for network infrastructure.

Office in the heart of Southeast Asia

Learn more:
we-online.com

Industry News
2024-09-18

In August Würth Elektronik eiSos opened its first Thai branch office - in the Rama 9 business center in Bangkok. The company says that this gives the up-and-coming Asian business a secure base and new impetus for growth. Würth Elektronik eiSos points out that the location in the heart of the vibrant business district has excellent public transport connections. Würth Elektronik's corporate history in Thailand began back in 2006 - with the support of the Würth Elektronik eiSos team in Singapore. The first Field Sales Engineer was then hired in September 2010. The Thailand business developed extremely positively. Under the leadership of Regional Sales Manager Chantwut Zukzwang, General Manager Sebastian Tan and thirteen employees are now driving Würth Elektronik's Thailand business forward. The new location can already rely on a stable sales base that also includes major EMS customers.

Silicon Valley Design and Innovation Centre

Learn more:
xppower.com

Industry News
2024-09-17

XP Power has opened the Silicon Valley Innovation Centre (SVIC) as its new North America Headquarters in San Jose, CA. This 85,000-square-foot facility integrates research and technology development, design engineering, pilot manufacturing, warehousing logistics, and service/support under one roof. The Innovation Centre facilitates rapid development cycles, allowing the company to deliver solutions efficiently - supported by a multi-disciplined Engineering Team with design and industry experience across semiconductor, healthcare, military, and industrial sectors. The facility includes a Reliability Lab with multiple Highly Accelerated Life Test (HALT), Highly Accelerated Stress Screen (HASS) and Environmental Chambers. An etch Plasma Chamber focuses on system validation for semiconductor fabrication equipment, and a 3-meter Anechoic EMC Chamber complements existing EMC compliance test stations to accelerate time-to-market. A dedicated Test Development Team is in place to design custom test equipment for specialized power conversion applications. The SVIC also incorporates eco-friendly features such as electric vehicle charging stations, automated LED lighting and HVAC systems, dishwashers to discourage single-use dishes, and the elimination of all Single-Use Plastics (SUP).

Micro DC/DC Stepup Converter operate from 0.9 V

Learn more:
torexsemi.com

Product Release
2024-09-12

Torex Semiconductor has launched its XCL109/XCL110 series of inductor built-in step-up DC/DC converters. The XCL109/XCL110 series incorporates both the IC and coil into a package measuring 2.0 x 2.5 x h1.04 mm³. It is a step-up DC/DC converter that requires small input and output capacitors as peripheral components. The converter can start operation with an input voltage as low as 0.9 V, making it suitable for devices powered by a single alkaline or nickel-metal hydride battery. The output voltage is adjustable in 0.1 V increments within the range of 1.8 V to 5.5 V, and it operates at ambient temperatures of up to 105 °C. This product is available in three types to suit various applications: The "load disconnect type" cuts off the connection between input and output during standby, minimizing battery consumption, while the "bypass type" maintains the connection between input and output during MCU sleep mode, supplying the battery voltage directly. It boosts the voltage to 3.3 V or other levels only during active mode, thereby reducing power consumption during sleep and contributing to overall low power consumption of the device. The "output OR type" is ideal for output OR connections in configurations with multiple power lines or backup systems. The XCL109/XCL110 series are designed for industrial equipment, IoT, mobile devices, wearables, healthcare, and any other devices that demand compact size, low power consumption, and high functionality/performance while prioritizing battery life. The device is integrated into a CL-2025-02 package, which is pin-compatible with other inductor built-in step-up DC/DC products.

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Sixteen MOSFETs in specific Package	Nexperia launched sixteen 80 V and 100 V power MOS...	12218	Product Release	Sixteen MOSFETs in specific Package	Nexperia launched sixteen 80 V and 100 V power MOSFETs in the copper-clip CCPAK1212 package for high power density. The copper-clip design provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices well-suited for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes application-specific MOSFETs (ASFETs) designed for AI server hot-swap functions. With top-side and bottom-side cooling options, these MOSFETs are supported by JEDEC registration. The benchmark PSMN1R0-100ASF is a 0.99 mΩ 100 V power MOSFET capable of conducting 460 A and dissipating 1.55 KW of power, yet in a CCPAK1212 package footprint that occupies 12 mm x 12 mm of board space. The PSMN1R0-100CSF offers similar statistics in a top-side cooled version. This is enabledby the internal construction of the devices. The "CC" in CCPAK1212 stands for copper clip, meaning that the power MOSFET silicon die is sandwiched between two pieces of copper, the drain tab on one side and the source clip on the other., which means that wire bonds are entirely eliminated.	09.12.2024 14:30:00	Dec	news_2024-12-15_16.jpg	\images\news_2024-12-15_16.jpg	https://www.nexperia.com/about/news-events/press-releases/CCPAK1212-package-pushes-the-performance-of-Nexperia-s-power-MOSFETs-to-the-next-level	nexperia.com
Acquisition of SiC JFET Business	onsemi announced that it has entered into an agree...	12209	Industry News	Acquisition of SiC JFET Business	onsemi announced that it has entered into an agreement to acquire the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, from Qorvo. The acquisition will complement onsemi's extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers. Additionally, the move will accelerate onsemi's readiness for emerging markets such as EV battery disconnects and solid-state circuit breakers (SSCBs). "As AI workloads become more complex and energy-intensive, the importance of reliable SiC JFETs that deliver high energy efficiency and are able to handle high voltages will continue to increase," said Simon Keeton, group president and general manager of the Power Solutions Group, onsemi. "With the addition of Qorvo's industry leading SiC JFET technology, our intelligent power portfolio offers our customers yet another solution to optimize energy consumption and increase power density."	09.12.2024 12:00:00	Dec	news_2024-12-15_7.jpg	\images\news_2024-12-15_7.jpg	https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-acquires-silicon-carbide-jfet-technology-to-enhance-its-power-portfolio-for-ai-data-centers	onsemi.com
Hot-Swap/E-Fuse	HMI released the HL8520E, a hot-swap/E-Fuse device...	12217	Product Release	Hot-Swap/E-Fuse	HMI released the HL8520E, a hot-swap/E-Fuse device designed to offer protection and power control for sensitive load circuitry. The HL8520E is designed to protect systems from input transients, shorts, and voltage spikes that could damage load circuitry, while managing power delivery to enhance reliability. With an input voltage range of 2.7 V to 16 V, it supports both low- and high-voltage systems, making it suitable for diverse applications. The device can also handle up to 20 A of output current. Featuring an integrated MOSFET with an R<sub>DS(on)</sub> of 2.8 mΩ, the HL8520E reduces conduction losses while improving power efficiency, and thermal performance. It includes several protection features, such as over-current protection (OCP), short-circuit protection (SCP), thermal shutdown (TSD), damaged MOSFET detection, over-voltage protection (OVP), and under-voltage lockout (UVLO), safeguarding both the device and the load from electrical faults. For smoother system operation, the HL8520E allows for an external adjustable soft start, enabling controlled inrush current during startup. Additionally, the device provides configurable current limits. The response time of less than 200 ns for short-circuit protection helps detecting and mitigating fault conditions. The device comes in an LGA-26 package measuring 4 mm x 4 mm.	05.12.2024 13:30:00	Dec	news_2024-12-15_15.jpg	\images\news_2024-12-15_15.jpg	https://hmisemi.com/hmi-introduces-16v-20a-advanced-hot-swap-e-fuse-for-robust-load-protection-and-efficient-power-management/	hmisemi.com
Donation to Charity instead of Christmas Gifts	Vincotech has again opted to embrace the seasonal ...	12205	Industry News	Donation to Charity instead of Christmas Gifts	Vincotech has again opted to embrace the seasonal spirit of charity. In lieu of sending gifts to customers, the company is presenting 12,000 Euros to its partner in philanthropy, Plan International Germany. Donated on behalf of its workforce and customers, these funds will support a development project in Ecuador. Youngsters, and girls especially, in ten communities in the Cotopaxi and Santa Elena regions stand to benefit from this initiative. It aims to impart business, digital, and soft skills that will help get them off to a better start in working life. The project also provides health services to mothers and children. This is Vincotech's second contribution to the project. The company had staged a virtual reality challenge at the PCIM Europe trade fair in May 2024 to raise funds for Plan International Germany. Fairgoers rose to the occasion. Vincotech and its partners rewarded their efforts by pledging €15,000 to upskill young Ecuadorians and furnish health services.	05.12.2024 08:00:00	Dec	news_2024-12-15_3.JPG	\images\news_2024-12-15_3.JPG	https://www.vincotech.com/news/company-news/article/vincotech-gives-eur12000-christmas-gift.html	vincotech.com
SiC Partnership between Automotive OEM and Semiconductor IDM	STMicroelectronics and Renault Group's Ampere have...	12203	Industry News	SiC Partnership between Automotive OEM and Semiconductor IDM	STMicroelectronics and Renault Group's Ampere have entered a multi-year agreement, effective from 2026, for the supply of Silicon Carbide (SiC) power modules. The multi-year agreement is aligned with Ampere's strategy of working upstream with its partners. The two companies have worked together on the optimization of a new power module, the key element in the powerbox. The powerbox combines three SiC-based power modules, an excitation module, which provides the necessary electrical excitation to the motor or generator for controlling the magnetic field within the motor, and a cooling baseplate designed to dissipate heat from the back side of the power module, simplifying the thermal management and cooling process. It is designed for both 400 V and 800 V battery systems, with the latter allowing rapid charging from 10% to 80% in under 15 minutes.	03.12.2024 06:00:00	Dec	news_2024-12-15_1.jpg	\images\news_2024-12-15_1.jpg	https://newsroom.st.com/media-center/press-item.html/c3299.html	st.com
Coupling Transmission Lines e. g. in PoE Systems	Würth Elektronik has expanded its WE-BAL series of...	12219	Product Release	Coupling Transmission Lines e. g. in PoE Systems	Würth Elektronik has expanded its WE-BAL series of baluns. The components for coupling symmetrical and asymmetrical transmission lines feature improved materials and manufacturing processes, and now cover wider frequency ranges from 673 MHz to 5900 MHz. In applications, such as antenna systems, audio and video devices, wireless communication systems, PoE systems, and measuring instruments, it is necessary to couple symmetrical and asymmetrical transmission lines in such a way that prevents signal loss. The SMT baluns with symmetrical impedance ranging from 50 to 200 Ω are integrated in 0603 and 0805 packages and operate with an insertion loss of up to a maximum of 2.0 dB.	02.12.2024 15:30:00	Dec	news_2024-12-15_17.jpg	\images\news_2024-12-15_17.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-bal	we-online.com
Acquisition in Current Sensor Business	Isabellenhütte Heusler has acquired Rathgeber as o...	12207	Industry News	Acquisition in Current Sensor Business	Isabellenhütte Heusler has acquired Rathgeber as of December 1, 2024. Both companies have a long-standing business relationship: As an external manufacturing service provider, Rathgeber was entrusted by Isabellenhütte with the punching of resistance bands, from which the ISA-WELD resistor series for current measurement is manufactured. Isabellenhütte expects to gain a strategic advantage from the acquisition. Rathgeber specializes in the production of temperature regulators for various markets. Isabellenhütte can thus supplement its product portfolio in measurement technology, expand its manufacturing expertise and strengthen its competitiveness.	02.12.2024 10:00:00	Dec	news_2024-12-15_5.jpg	\images\news_2024-12-15_5.jpg	https://www.isabellenhuette.de/en/news/isabellenhuette-acquires-rathgeber-gmbh	isabellenhuette.de
Automotive-Grade SiC MOSFETs in TC3PAK Package	Inventchip Technology released four automotive-gra...	12210	Product Release	Automotive-Grade SiC MOSFETs in TC3PAK Package	Inventchip Technology released four automotive-grade SiC MOSFETs in the TC3PAK package: IV2Q12080K1Z, IV2Q12040K1Z, IV3Q12035K1Z and IV3Q12021K1Z. They are rated at 1200 V with resistance values of 80 mΩ, 40 mΩ, 35 mΩ and 21 mΩ respectively. The TC3PAK package, designed for topside cooling, boasts a 125 mm² metal tab surface, significantly enhancing heat dissipation capabilities. Compared to the traditional TO-263/D2PAK package, the TC3PAK's heat dissipation area is over 200 % larger, effectively halving the thermal resistance between the case and the heatsink. This design not only improves thermal management but also facilitates a more efficient heat dissipation process. Unlike TO-263/D2PAK packages that depend on PCB for heat dissipation and conduction, TC3PAK allows direct heat conduction to a heatsink via its topside metal tab. Furthermore, the TC3PAK package is 23 % thinner, measuring under 3.6 mm in height, compared to the TO-263/D2PAK, which makes it more suitable for low profile designs. Its large lead frame can support a large die, such as a 5 mm x 6 mm die, or multiple dies, providing ample space for future power upgrades without the necessity for a new package format. The TC3PAK package is engineered for surface mounting with a top-side connection to an external heatsink and facilitates the automatic assembly of the PCB-power devices-heatsink stack.	27.11.2024 06:30:00	Nov	news_2024-12-15_8.jpg	\images\news_2024-12-15_8.jpg	https://www.inventchip.com.cn/en/	inventchip.com.cn
Semiconductor Company cooperates with Automotive Tier-1 Supplier	ROHM Semiconductor and Valeo announced they are co...	12204	Industry News	Semiconductor Company cooperates with Automotive Tier-1 Supplier	ROHM Semiconductor and Valeo announced they are collaborating to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE™ pack to Valeo for future powertrain solutions. Valeo focuses on efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the largest one (eTrucks). ROHM and Valeo have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter. By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging. Valeo will start supplying a first series project in early 2026.	26.11.2024 07:00:00	Nov	news_2024-12-15_2.jpg	\images\news_2024-12-15_2.jpg	https://www.rohm.com/news-detail?news-title=2024-11-26_news_valeo&defaultGroupId=false	rohm.com
High Speed & High Power DC Electronic Load	One of the features of the IT8900G/L series high p...	12214	Product Release	High Speed & High Power DC Electronic Load	One of the features of the IT8900G/L series high power DC electronic load from ITECH is its fast current dynamic response. Compared with its predecessor, the current rise/fall speed of this device has been increased by 3-4 times, ensuring that users are able to capture even smaller fluctuations in real time when dealing with complex load changes. Especially in scenarios that require high-speed response, such as testing server power supplies, DC/DC modules, and on-board chargers (OBCs), theIT8900G/L demonstrates its processing capabilities. The IT8906G-150-600 model can provide 0…600 A under 30 kHz dynamic band load conditions. To further optimize stability in high-frequency testing, ITECH has also introduced a low-inductance test line, which significantly reduces electromagnetic interference during rapid current changes for efficient and accurate signal transmission. The device supports load testing down to 0.075 V / 60 A and 0.75 V / 600 A with an internal resistance of 0.7 mΩ, making the IT8900G/L a test tool for fuel cells, supercapacitors, and solar cells.	22.11.2024 10:30:00	Nov	news_2024-12-15_12.jpg	\images\news_2024-12-15_12.jpg	https://www.itechate.com/en/news/IT8900GL%20.html	itechate.com
"A much better Way to conduct Heat away from the Die" – especially in GaN Applications	QPT has just filed a patent for a way to attach di...	12206	Industry News	"A much better Way to conduct Heat away from the Die" – especially in GaN Applications	QPT has just filed a patent for a way to attach dies to the heat spreaders or substrates which are typically Aluminium Nitride (AlN), which it calls <i>qAttach™</i>. This is said to provide "a much better way to conduct heat away from the die and also increases reliability" as the assembly process places less stress on the substrates, which is one of the biggest challenges the high-power semiconductor packaging industry faces. QPT developed this <i>qAttach</i> process for use with the Gallium Nitride (GaN) transistors that it uses in its electric motor control designs to enable them to handle the huge amounts of waste heat that results from using them for high power, high voltage applications and at high frequency. GaN transistors are now being made that are rated for high voltages but the die size is relatively small for high voltage transistors, which means there is less surface area to remove heat from. As a result, they are often down rated to enable them to function without overheating.<i>qAttach</i> solves this problem as now significantly more heat can be efficiently removed from the die so that it will not overheat. This opens up GaN to now be efficiently used for next generation, high power, high voltage applications in automotive, industrial motors and to finally deliver on the promise of low cost, high voltage GaN transistors.	21.11.2024 09:00:00	Nov	news_2024-12-15_4.jpg	\images\news_2024-12-15_4.jpg	https://www.q-p-t.com/press-releases/qpt-solves-major-problem-of-waste-heat-removal-in-power-electronics-with-novel-die-attach-process	q-p-t.com
600 W Open Frame Power Supply for Medical and Industrial Applications	Murata Manufacturing has introduced the PQC600 ope...	12195	Product Release	600 W Open Frame Power Supply for Medical and Industrial Applications	Murata Manufacturing has introduced the PQC600 open-frame AC to DC power supply, which caters to the needs of the latest medical and industrial applications, such as hospital beds, dentist chairs, medical equipment, and industrial process machinery. It offers 600 W of power within a package that is less than 1U in height and is certified to the IEC 60601-1 Edition 3 medical safety standard, which includes 2 Means of Patient Protection (MOPP) from primary to secondary, 1 MOPP from the chassis to ground and 1 MOPP from output to chassis. Additionally, the PQC600 complies with the IEC 60601-1-2 4th Edition for EMC standards, ensuring robust electromagnetic compatibility, and is suitable for use with medical devices that have Type B or Type BF applied parts. With a 600W forced-air cooling design, it achieves an efficiency of 95 % at full load. The power supply features an interleaved Power Factor Correction (PFC) and back-end synchronous rectification. Furthermore, the power supply includes a droop current sharing feature, enabling multiple units to be configured in parallel for greater power scalability.	21.11.2024 08:30:00	Nov	news_2024-12-01_10.jpg	\images\news_2024-12-01_10.jpg	https://www.murata.com/en-eu/news/power/ac-dc-converters/2024/1121	murata.com
Chief Operating Officer started in Office	Effective November 1, 2024, Markus Fischer, the fo...	12187	People	Chief Operating Officer started in Office	Effective November 1, 2024, Markus Fischer, the former Executive Vice President Operations, has been appointed to the Rohde & Schwarz Executive Board. As Chief Operating Officer (COO), he will collaborate with Christian Leicher (CEO) and Andreas Pauly (CTO) to continue to keep the company on course for growth in these challenging times. As Chief Operating Officer, Markus Fischer will be responsible for most of the operative business of Rohde & Schwarz. Andreas Pauly, who joined the Executive Board as Chief Technology Officer in October 2023, will retain his primary responsibility for innovation, research and development. Managing Partner Christian Leicher will continue to head the Executive Board as President and CEO. Markus Fischer (44) joined the technology group in 2011 as Head of Corporate Material Sourcing at Munich headquarters. After another management role at Rohde & Schwarz Messgerätebau GmbH in Memmingen, he assumed overall responsibility for the group's supply chain in 2017. In July 2020, he was appointed Executive Vice President Operations, becoming a member of Corporate Management. In that role, Fischer was responsible for all Rohde & Schwarz production activities as well as the supply chain and procurement. The technology group's five production plants have a high degree of vertical integration. As Executive Vice President Operations, Fischer focused above all on improving such key aspects as efficiency, flexibility and scalability. Consequently, his division not only ensured delivery capability in times of uncertain supply chains, but also contributed substantially to the stability of Rohde & Schwarz.	21.11.2024 07:00:00	Nov	news_2024-12-01_2.jpg	\images\news_2024-12-01_2.jpg	https://www.rohde-schwarz.com/uk/about/news-press/all-news/new-chief-operating-officer-at-rohde-schwarz-press-release-detailpage_229356-1531917.html	rohde-schwarz.com
Programmable Mixed-Signal ICs, Including Low-Power Device with 14-Bit SAR ADC	Renesas announced AnalogPAK ICs, including lower p...	12200	Product Release	Programmable Mixed-Signal ICs, Including Low-Power Device with 14-Bit SAR ADC	Renesas announced AnalogPAK ICs, including lower power and automotive-qualified devices along with the industry’s first programmable 14-bit SAR ADC (Successive-Approximation Register Analog-Digital Converter). AnalogPAK devices are part of Renesas’ GreenPAK Family of Programmable Mixed-Signal Matrix products: NVM programmable devices integrating many system functions while minimizing component count, board space, and power consumption. GreenPAK and AnalogPAK ICs deliver functional replacement of mixed-signal standard products and stand-alone discrete circuits. They also provide hardware supervisory functions for SoCs and microcontrollers. GreenPAK and AnalogPAK devices are suited for consumer electronics, computing, white goods, industrial, communications, and automotive. Using Go Configure Software Hub and the GreenPAK Development Kit, designers can create and program a custom circuit in minutes. For example, the SLG47011 AnalogPAK device includes several D/A features including programable multichannel 14-bit SAR ADC with Programmable Gain Amplifier (PGA). The SLG47011 also has user-defined power saving modes for all macrocells that enable designers to switch off some blocks in sleep mode and therefore reduce power consumption to the µA level. The SLG47011 can be used to extend the performance of, or to offload an MCUs. It can also be used in conjunction with an MCU to replace a complex analog front-end (AFE). Key functions supported by the SLG47011 include measurement, data processing, logic control and data output.	20.11.2024 13:30:00	Nov	news_2024-12-01_15.jpg	\images\news_2024-12-01_15.jpg	https://www.renesas.com/en/about/newsroom/renesas-introduces-industry-s-first-complete-memory-interface-chipset-solutions-second-generation	renesas.com
Tool-in Ceremony for Semiconductor Fab	Samsung Electronics held a tool-in ceremony for it...	12192	Industry News	Tool-in Ceremony for Semiconductor Fab	Samsung Electronics held a tool-in ceremony for its semiconductor research and development complex (NRD-K) at its Giheung campus. About 100 guests, including those from suppliers and customers, were in attendance to celebrate the milestone. NRD-K broke ground in 2022 and is set to become a key research base for Samsung’s memory, system LSI and foundry semiconductor R&D. With its infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion (more than US-$ 14 billion) by 2030 for the complex in an area covering about 109,000 square meters within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025. NRD-K will be set up with High NA extreme ultra-violet (EUV) lithography and new material deposition equipment aimed at accelerating the development of next-generation memory semiconductors such as 3D DRAM and V-NAND with more than 1,000 layers. In addition, wafer bonding infrastructure with innovative wafer-to-wafer bonding capabilities is also planned to dock.	18.11.2024 12:00:00	Nov	news_2024-12-01_7.jpg	\images\news_2024-12-01_7.jpg	https://news.samsung.com/global/samsung-reaches-key-milestone-at-new-semiconductor-rd-complex	samsung.com
Three Companies partner for Solar Inverter Designs	Mouser Electronics has partnered with onsemi and W...	12208	Industry News	Three Companies partner for Solar Inverter Designs	Mouser Electronics has partnered with onsemi and Würth Elektronik to address the growing solar inverter market. onsemi's Silicon Carbide (SiC) solutions address the needs for the highest levels of efficiency, reliability, and safety while their boost and inverter power integrated modules (PIMs) anchor the grid-interface electronics. Würth Elektronik's gate drivers, sensing control, and peripheral power products complete the system. E. g. the onsemi NXH40B120MNQ1 is an EliteSiC PIM containing a dual full SiC boost stage. The Würth Elektronik WE-AGDT high-power auxiliary gate drive transformers feature unipolar and bipolar outputs, making them suitable for powering state-of-the-art SiC MOSFET gate drivers up to 6W of power as well as IGBT and power MOSFETs.	18.11.2024 11:00:00	Nov	news_2024-12-15_6.jpg	\images\news_2024-12-15_6.jpg	https://eu.mouser.com/newsroom/publicrelations-onsemi-wurth-solar-2024final/?utm_source=publitek-media-for-pr&utm_medium=pr&utm_campaign=EMEA_PR&utm_content=2024&pid=mouser&cid=pr	mouser.com
A very short Look back at electronica 2024	From November 12 to 15,2024 a total of 3,480 exhib...	12191	Event News	A very short Look back at electronica 2024	From November 12 to 15,2024 a total of 3,480 exhibitors presented their innovations across the entire spectrum of electronics to about 80,000 visitors at the electronica trade fair in Munich, Germany. In addition to sustainability, key topics such as artificial intelligence, the future of mobility, and the development of young talent sparked discussions at the exhibition stands and at the supporting program. The equally successful SEMICON Europa took place concurrently in two of the 18 halls. The organizer, Messe München, is “delighted that the trade fair was once again held at the same high level as before the pandemic and that the atmosphere was very positive despite the challenging times”. In order to attend electronica show, which had its debut exactly 60 years before, 3,480 exhibitors traveled from 59 countries and regions, with 76 percent of them from abroad. There were around 80,000 visitors from around 100 countries and regions. The share of international visitors totaled 54 percent. After Germany, the top 10 visitor countries were: Italy, China, France, Austria, United Kingdom, Switzerland, USA, Spain, Netherlands and Poland.<br>Some trivia: Roland R. Ackermann, the Correspondent Editor Bavaria of Bodo’s Power Systems, had already visited the very first electronica show 60 years ago while he was delighted to greet so many friends and business friends at this year’s electronica show as well. The next electronica will take place from November 10 to 13, 2026.	15.11.2024 11:00:00	Nov	news_2024-12-01_6.jpg	\images\news_2024-12-01_6.jpg	https://electronica.de/en/trade-fair/journalists/press-releases/detail/final-report-electronica-2024.html	electronica.de
GaN Design and Development Center in Ottawa, Canada	The French company Wise-integration, which is acti...	12190	Industry News	GaN Design and Development Center in Ottawa, Canada	The French company Wise-integration, which is active in digital control of gallium nitride (GaN) and GaN ICs for power conversion, has opened its North American Design & Development Center in Ottawa, Ontario, Canada. Led by Christian Cojocaru and staffed by experts in analog and digital technology design, the center will drive the development of the company’s design portfolio for the next generations of WiseGan®. By maximizing the high-frequency capabilities of GaN without added power losses, the next generations of the two product lines are said to “enable significant reductions in system size and cost, while boosting overall conversion efficiency”. Since its launch in 2020, the fabless company has established more than 20 patent families for its two core product lines. WiseGan includes GaN power integrated circuits designed for high-frequency operation in the MHz range, integrating features that streamline implementation with digital control. WiseWare is a 32-bit, MCU-based AC/DC digital controller optimized for GaN-based power-supply architectures. The company recently announced the launch of a subsidiary in Hong Kong.	15.11.2024 10:00:00	Nov	news_2024-12-01_5.jpg	\images\news_2024-12-01_5.jpg	https://wise-integration.com/wise-integration-expands-in-north-america-with-ottawa-design-center-to-develop-next-gen-wisegan-digital-solutions/	wise-integration.com
DC/DC Converters for Industrial and Railway Environments	CUI announces two high-performance isolated DC/DC ...	12216	Product Release	DC/DC Converters for Industrial and Railway Environments	CUI announces two high-performance isolated DC/DC converters, the PRC300 and 600 series, both designed with 4.2 kV isolation to support engineers in e-mobility, railway, and industrial industries. The PRC300 series, which is UL/EN/IEC 62368-1 certified, has several special features reinforced insulation and baseplate cooling. The PRC600 series offers 600 W of power in a compact brick package and positive and negative logic options, which is well-suited for a variety of industrial and high-voltage applications. Additional features include remote ON/OFF control and output voltage trimming. The industry standard half and full brick packages both offer a high input voltage range of 180 to 400 V<sub>DC</sub> and an operating temperature ranging between -40 and +100 °C. The converters provide several protection features, including over-current, over-temperature, over-voltage, short circuit, and input under-voltage protections. In addition, they meet EN 61373 and EN 45545-2.	13.11.2024 12:30:00	Nov	news_2024-12-15_14.jpg	\images\news_2024-12-15_14.jpg	https://www.cui.com/news/press-releases/cui-inc.-releases-high-performance-dc-to-dc-converters-for-industrial-and-railway-environments	cui.com
Linear FET 2 MOSFET for Hot-Swap and Battery Protection	The safe hot-swap operation in AI servers and tele...	12215	Product Release	Linear FET 2 MOSFET for Hot-Swap and Battery Protection	The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low R<sub>DS(on)</sub>. Infineon Technologies addresses this challenge with its OptiMOS™ 5 Linear FET 2 – a “MOSFET designed to provide the ideal trade-off between the R<sub>DS(on)</sub> of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET”. The device prevents damage to the load by limiting the high inrush current and ensures low losses during operation. Compared to the previous generation (the OptiMOS Linear FET), the OptiMOS Linear FET 2 offers improved SOA at elevated temperatures and reduced gate leakage current, as well as a wider range of packages. This allows for more MOSFETs to be connected in parallel per controller, reducing bill-of-material (BOM) costs and offering more design flexibility due to the extended product portfolio. The 100 V OptiMOS 5 Linear FET 2 is available in a TO-leadless package (TOLL) and offers a 12 times higher SOA at 54 V at 10 ms and 3.5 times higher SOA at 100 µs compared to a standard OptiMOS 5 with similar R<sub>DS(on)</sub>. The latter improvement is particularly important for the battery protection performed inside the battery management system (BMS) in case of a short circuit event. This enables high power density, efficiency, and reliability for battery protection which are used in a wide range of applications including power tools, e-bikes, e-scooters, forklifts, battery back-up units and battery-powered vehicles.	13.11.2024 11:30:00	Nov	news_2024-12-15_13.jpg	\images\news_2024-12-15_13.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202411-023.html	infineon.com
Collaboration to Advance Plug & Charge	Vector and Hubject now collaborate to further adva...	12189	Industry News	Collaboration to Advance Plug & Charge	Vector and Hubject now collaborate to further advance the Plug & Charge (PnC) technology. The aim is to simplify the electric vehicle (EV) charging process. With more than 2.6 million PnC-ready vehicles already on the market and more EVs on the horizon, the partnership helps to accelerate the adoption and implementation of PnC technology. Through this collaboration, automotive OEMs and charging station manufacturers can now obtain the Hubject QA (Pre-Production) and Production Certificates via the Vector Security Manager with the latest release of the development and test tool CANoe Version 18 SP3. The Vector Security Manager is the link between the Vector tools and the OEM-specific security implementations. With it, security functions can be used uniformly in the tools. Hubject QA and Production Certificates are essential for testing EVs and Electric Vehicle Supply Equipment (EVSE) using the CANoe Test Package EV or CANoe Test Package EVSE from Vector. This integration ensures that both the vehicles and the charging stations meet the ISO 15118 standard of interoperability, conformity and market readiness. PnC offers a seamless user experience. It eliminates the need for physical cards or mobile apps to authenticate and initiate charging.	13.11.2024 09:00:00	Nov	news_2024-12-01_4.jpg	\images\news_2024-12-01_4.jpg	https://www.vector.com/at/de/news/news/vector-and-hubject-collaborate-to-advance-plug-charge/	vector.com
Cooperation for Development of Sensor ICs with Functional Safety	Novosense Microelectronics and Continental Automot...	12186	Industry News	Cooperation for Development of Sensor ICs with Functional Safety	Novosense Microelectronics and Continental Automotive Technologies have signed a memorandum to enhance strategic cooperation in the development of sensor ICs with functional safety, as well as for the global integration of Novosense’s products within Continental’s worldwide platforms. Products being co-developed include those for safety functions and system reliability – from airbag triggers to battery pack monitors. Novosense is a member of the AEC and an active developer for the global automotive industry. It has implemented an extensive R&D program for the sector that leverages a system-level understanding of automotive electronics, as well as a reliable product delivery supply chain.	13.11.2024 06:00:00	Nov	news_2024-12-01_1.jpg	\images\news_2024-12-01_1.jpg	https://www.novosns.com/en/company-news-318	novosns.com
Automotive grade residual Current Monitoring Sensor	LEM has designed an automotive grade residual curr...	12199	Product Release	Automotive grade residual Current Monitoring Sensor	LEM has designed an automotive grade residual current monitoring (RCM) type B sensor for bi-directional OBCs with ASIL B capabilities according to ISO26262 for transformer-less on-board chargers (OBCs). This sensor, called CDT, complies with all the relevant safety standards. The RCM type B sensor enables designers to react to the new ISO5474 Part 2 standard for AC power transfer. The standard focuses on electrically propelled road vehicles and outlines the functional and safety requirements for power transfer between the vehicle and an external electric circuit using AC. Part of a series that operates in conjunction with ISO5474 Part 1, the new standard covers conductive charging requirements for modes 2 and 3 according to IEC 61851-1, reverse power transfer through on-board standard socket-outlets or EV plugs, and voltages up to 1000V AC. The CDT detects differences in current between two points, identifying such faults as short circuits and enabling rapid isolation of faulty sections to prevent damage. LEM’s CDT sensor is suited for RCM type B for bi-directional OBCs, where residual currents are detected and monitored, including AC and DC leakage currents. Using LEM’s patented fluxgate technology the CDT sensor offers a level of accuracy of ± 0.5 mA @ 5 mA. The device also provides functions on the secured Serial Peripheral Interface (SPI) bus including dynamic fault selection, monitoring of T°C, leakage value and supply monitoring, but it also provides diagnostic functions, and it is able to work equally effectively with single-phase and 3-phase AC.	12.11.2024 12:30:00	Nov	news_2024-12-01_14.jpg	\images\news_2024-12-01_14.jpg	https://www.lem.com/en/lem-launches-first-automotive-grade-residual-rcm-b-sensor	lem.com
SiC Schottky Barrier Diodes for High-Voltage xEV Systems	ROHM Semiconductor announced surface mount SiC Sch...	12198	Product Release	SiC Schottky Barrier Diodes for High-Voltage xEV Systems	ROHM Semiconductor announced surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models (SCS2xxxNHR; AEC-Q101 qualified) for automotive applications such as onboard chargers (OBCs), which will soon be supplemented by eight additional models (SCS2xxxN) for industrial equipment such as FA devices and PV inverters. Adopting a specific package shape, it achieves a minimum creepage distance of 5.1 mm. These products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1 mm, approximately 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high-voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing the replacement on existing circuit boards. Two voltage ratings are offered – 650 V and 1200 V – supporting 400 V systems commonly used in xEVs, as well as higher voltage systems expected to gain wider adoption in the future.	12.11.2024 11:30:00	Nov	news_2024-12-01_13.jpg	\images\news_2024-12-01_13.jpg	https://www.rohm.com/news-detail?news-title=2024-11-12_news_sbd&defaultGroupId=false	rohm.com
120 V/4 A Half-Bridge Gate Driver for Automotive Applications	Nexperia introduced a series of high-performance g...	12196	Product Release	120 V/4 A Half-Bridge Gate Driver for Automotive Applications	Nexperia introduced a series of high-performance gate driver ICs designed for driving both high-side and low-side N-channel MOSFETs in a synchronous buck or half-bridge configuration. The automotive-qualified NGD4300-Q100 is suited for electronic power steering and power converters, while the NGD4300 has been designed for use with DC/DC converters in consumer devices, servers and telecommunications equipment as well as for micro-inverters used in various industrial applications. The floating high-side driver in these ICs can operate from bus voltages up to 120 V and use a bootstrap supply with an integrated diode – features which simplify overall system design and help to reduce PCB size. They can deliver up to 4 A (peak) source and 5 A of sink current to enable short rise and fall times even for heavy loads. The gate driver has a 13 ns delay and offers a channel-to-channel delay matching of 1 ns. These delays help to minimize dead-time by maximizing switching duty-cycle. 4 ns rise and 3.5 ns (typical) fall times help to deliver higher efficiency and support high frequency and fast system control. These gate drivers accept input control signals complying with both TTL and CMOS logic levels. These ICs are fabricated using a silicon-on-insulator (SOI) process. This allows the negative voltage tolerance of the HS pin to extend to -5 V, significantly reducing the risk of damage caused by system parasitic component and unexpected spikes. The NGD4300 and NGD4300-Q100 are available in a choice of DFN-8, SO-8 and HSO-8 packages to offer engineers the flexibility to trade-off between device size and thermal performance, depending on application requirements.	12.11.2024 09:30:00	Nov	news_2024-12-01_11.jpg	\images\news_2024-12-01_11.jpg	https://www.nexperia.com/about/news-events/press-releases/Nexperia-s-new-120-V-4-A-half-bridge-gate-driver-raises-robustness-and-efficiency-in-automotive-applications	nexperia.com
Semiconductor Product Distribution Center opened in Germany	Texas Instruments has opened its product distribut...	12188	Industry News	Semiconductor Product Distribution Center opened in Germany	Texas Instruments has opened its product distribution center in Dreieich, Germany, close to Frankfurt, Germany. This distribution center includes 9,000 square meters of space and specific automation features. It has the capacity to quickly ship up to 7,500 orders per day. Located near Frankfurt Airport, the distribution center enables faster product delivery in Europe. The pick, pack and ship process is fully automated and orders are ready to ship within 15 minutes or less. Customers in central Germany can expect same-day product delivery, while next-day delivery is available to customers in most European countries. TI has been operating in Europe since 1956.	12.11.2024 08:00:00	Nov	news_2024-12-01_3.jpg	\images\news_2024-12-01_3.jpg	https://www.ti.com/about-ti/newsroom/news-releases/2024/2024-11-12-texas-instruments-accelerates-delivery-to-european-customers-with-opening-of-new-product-distribution-center-near-frankfurt--germany.html	ti.com
800 V GaN Inverter with 30 kW/l Power Density	Cambridge GaN Devices (CGD) and IFP Energies nouve...	12194	Product Release	800 V GaN Inverter with 30 kW/l Power Density	Cambridge GaN Devices (CGD) and IFP Energies nouvelles (IFPEN), a French public research and training organization in the fields of energy, transport and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs in a multi-level, 800 V<sub>DC</sub> inverter. The demo delivers a power density of 30 kW/l, which is greater than can be achieved by more expensive, state-of-the-art SiC-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25 m&ohm; / 650 V ICeGaN ICs – 36 devices in total – in parallel. This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800 V<sub>DC</sub>, 3-phase output, a peak current of 125 A<sub>RMS</sub> for 10 s or 180 A<sub>Peak</sub> and a continuous current of 85 A<sub>RMS</sub> continuous (120 A<sub>Peak</sub>). The improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. As GaN transistors can operate at much higher frequencies than silicon transistors, the iron losses in the motor, particularly in the case of machines with low inductances are reduced. The 3-level topology reduces EMI and enhances the reliability of the system. In terms of thermal management insulated metallized substrate boards featuring an aluminium core facilitate thermal dissipation for adequate operating temperatures, and this extends the lifespan of the system and associated GaN devices. The modular design facilitates scalability and adaptability for varying system requirements.	12.11.2024 07:30:00	Nov	news_2024-12-01_9.jpg	\images\news_2024-12-01_9.jpg	https://www.camgandevices.com/en/p/cgd-demos-800-vdc-multi-level-inverter-developed-using-gan-with-ifpen-that-outperforms-sic/	camgandevices.com
Facilitating SiC and GaN Power Testing	The Italian company CREA (Collaudi Elettronici Aut...	12211	Product Release	Facilitating SiC and GaN Power Testing	The Italian company CREA (Collaudi Elettronici Automatizzati) – a subsidiary of Advantest Europe – presented its solution for a variety of power devices, including SiC and GaN power testing on wafer, single-die, substrate, PKG, and module, typically used in industrial and automotive applications. PCI (Probe Card Interface) technology, patented by CREA, is a high-volume manufacturing test solution designed to work seamlessly with the CREA MT tester family. This combination enables high-power static, dynamic, and short circuit testing for Si, SiC, and GaN bare dies, particularly in Known Good Die (KGD) applications. PCI hardware allows monitoring the power levels maintained by each probe card needle in real-time, allowing test engineers to predict potential Device Under Test (DUT) failures during the test phase. Whenever a device failure is predicted, the PCI can react immediately (within 300 ns) by shutting off the probe card's power supply, safeguarding the equipment hardware (probe card, instruments) and the DUT. The system supports voltages up to 10 kV with a current capability up to 15 kA.	12.11.2024 07:30:00	Nov	news_2024-12-15_9.jpg	\images\news_2024-12-15_9.jpg	https://www.crea-test.com/	crea-test.com
IGBTs in several different Packages for up to 1700 V	Microchip Technology now offers its IGBT 7 devices...	12193	Product Release	IGBTs in several different Packages for up to 1700 V	Microchip Technology now offers its IGBT 7 devices in different packages, multiple topologies, as well as current and voltage ranges. The components are available in standard D3 and D4 62 mm packages, as well as SP6C, SP1F and SP6LI packages; they are intended for power applications in solar inverters, hydrogen ecosystems, commercial and agricultural vehicles and More Electric Aircraft (MEA). Many configurations are available in the following topologies: three-level Neutral-Point Clamped (NPC), three-phase bridge, boost chopper, buck chopper, dual-common source, full-bridge, phase leg, single switch and T-type. Devices can be provided with voltages ranging from 1200 V to 1700 V while currents range from 50 A to 900 A. Claimed to operate with a “lower on-state IGBT voltage (V<sub>ce</sub>), improved antiparallel diode (lower V<sub>f</sub>) and increased current capability” these components can enable lower power losses.	12.11.2024 06:30:00	Nov	news_2024-12-01_8.jpg	\images\news_2024-12-01_8.jpg	https://www.microchip.com/en-us/about/news-releases/products/introducing-a-wide-portfolio-of-igbt-7-power-devices-optimized	microchip.com
1200 V SiC MOSFETs in Bare Die Format	Toshiba has developed the X5M007E120, a 1200 V SiC...	12201	Product Release	1200 V SiC MOSFETs in Bare Die Format	Toshiba has developed the X5M007E120, a 1200 V SiC MOSFETs with an low on-resistance of 7.2 m&ohm;, which is particularly suited to applications within automotive traction inverters. The device has a V<sub>DSS</sub> of 1200 V and is rated for a drain current (I<sub>D</sub>) of 229 A continuously, with 458 A for pulsed operation (I<sub>D Pulse</sub>). These AEC-Q100 qualified devices can operate with channel temperatures (T<sub>ch</sub>) up to 175 °C. Engineering samples are expected to ship during 2025, with mass production samples scheduled to start in 2026.	12.11.2024 00:00:00	Nov	news_2024-12-01_16.jpg	\images\news_2024-12-01_16.jpg	https://toshiba.semicon-storage.com/eu/company/news/2024/11/sic-power-devices-20241112-1.html	toshiba.semicon-storage.com
Analog and Mixed-Signal Platform	onsemi introduced the Treo Platform, an analog and...	12185	Product Release	Analog and Mixed-Signal Platform	onsemi introduced the Treo Platform, an analog and mixed-signal platform built with Bipolar-CMOS-DMOS (BCD) process technology on an 65 nm node. This platform provides the foundation for a range of power and sensing solutions from the manufacturer including high-performance and low-power sensing, high-efficiency power management, and purpose-built communications devices. Using this single, scalable solution, users can accelerate product development for existing applications, and respond to emerging market opportunities. The Treo Platform features a modular, SoC-like architecture with a set of ever-evolving IP building blocks that make up the compute, power management, sensing, and communications subsystems. It offers digital processing capabilities and "better analog IP performance". With these capabilities, the platform can deliver local intelligence and compute for flexible configuration, as well as improve performance and accuracy in end applications. Additionally, the platform supports "the industry's widest voltage range of 1-90 V and operating temperatures up to 175 ° C", which allows engineers to integrate a range of low-to-high power functionality. Initial product families built on the Treo Platform are sampling now, including voltage translators, ultra-low-power AFEs, LDOs, ultrasonic sensors, multi-phase controllers, and single-pair Ethernet controllers. Through 2025, the semiconductor manufacturer will deliver new family members including: high performance sensors, DC/DC converters, automotive LED drivers, electrical safety ICs, connectivity, and more.	11.11.2024 15:30:00	Nov	news_2024-11-15_20.jpg	\images\news_2024-11-15_20.jpg	https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-introduces-the-industry-s-most-advanced-analog-and-mixed-signal-platform	onsemi.com
Motor Suite for simplified Motor Control Development	Infineon Technologies launched its Motor Suite dub...	12197	Product Release	Motor Suite for simplified Motor Control Development	Infineon Technologies launched its Motor Suite dubbed ModusToolbox™, which is a solution of software, tools and resources for developing, configuring and monitoring motor control applications. With its ability to support different motor types, the solution intends to enable developers to bring high-performance motor control applications to market quickly and efficiently. The suite supports industrial, robotics, and consumer applications such as home appliances, HVAC, drones, and light electric vehicles. The suite streamlines development and testing, providing real-time parameter monitoring for relevant insights into motor performance, efficiency, and reliability. This enables engineers to identify issues, optimize designs, and enhance overall functionality. It also offers signal analysis, and customized status monitoring. ModusToolbox Motor Suite features automatic detection and recognition of supported boards and kits, real-time visualization and monitoring of motor control related signals. It also provides pre-configured algorithms and real-time monitoring of critical system parameters. Additionally, the solution offers algorithms to increase the control robustness across many motor types and applications. It currently includes out-of-the-box support for Infineon’s XMC7000 microcontrollers and will further expand its capability to include industrial MCUs, with PSOC™ Control integration confirmed for upcoming releases. It provides a graphical user interface for motor control development and an adaptable, hardware-abstracted motor control core library.	08.11.2024 10:30:00	Nov	news_2024-12-01_12.jpg	\images\news_2024-12-01_12.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFCSS202411-022.html	infineon.com
PLECS Conference 2025	Join the next PLECS Conference about Embedded Code...	12166	Event News	PLECS Conference 2025	Join the next PLECS Conference about Embedded Code Generation. The speakers are engineers from industry, research, and academia who will present current applications in this field. Engage with experts and network with over 100 participants in the discussion and networking area. Besides that, take the opportunity to exchange ideas with Plexim developers. The conference language will be English. Note that this is an on-site only event. The participation fee will be 700.00 Euros or Swiss Francs (incl. 8.1% VAT) and can be paid by invoice or credit card. The Plexim staff is excited to welcome you again in Zurich, on March 4 and 5, 2025!	08.11.2024 06:00:00	Nov	news_2024-11-15_1.png	\images\news_2024-11-15_1.png	https://www.plexim.com/events/seminars/2325	plexim.com
Galvanically isolated Gate Drivers provide Protection for IGBTs and SiC MOSFETs	STMicroelectronics' STGAP3S family of gate drivers...	12184	Product Release	Galvanically isolated Gate Drivers provide Protection for IGBTs and SiC MOSFETs	STMicroelectronics' STGAP3S family of gate drivers for silicon-carbide and IGBT power switches provide a reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, withstanding 9.6 kV transient isolation voltage (VIOTM) with 200 V/ns common-mode transient immunity (CMTI). Suited for motor drives for industrial applications such as air conditioning, factory automation, and home appliances the drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters and solar inverters. The STGAP3S product family includes different options with 10 A and 6 A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches. The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage. The driver's integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. The available device variants allow a choice of 10 A sink/source and 6 A sink/source drive-current capability with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins.	07.11.2024 14:30:00	Nov	news_2024-11-15_19.jpg	\images\news_2024-11-15_19.jpg	https://newsroom.st.com/media-center/press-item.html/n4656.html	st.com
1200 V IGBTs for Automotive and Industrial Applications	ROHM has developed automotive-grade AEC-Q101 quali...	12183	Product Release	1200 V IGBTs for Automotive and Industrial Applications	ROHM has developed automotive-grade AEC-Q101 qualified 4<sup>th</sup> Generation 1200V IGBTs for vehicle electric compressors and HV heaters as well as industrial inverters. The current lineup includes four models - RGA80TRX2HR / RGA80TRX2EHR / RGA80TSX2HR / RGA80TSX2EHR - in two discrete package types (TO-247-4L and TO-247N), along with 11 bare chip variants - SG84xxWN - with plans to further expand the lineup in the future. In case of a short circuit these devices provide a withstand time of 10 µs (T<sub>j</sub>=25 °C) together with low switching and conduction losses while maintaining a withstand voltage of 1200 V. Its TO-247-4L package features 4 terminals, can accommodate an effective voltage of 1100 V in a 'Pollution Degree 2 environment' by ensuring adequate creepage distance between pins. High-speed switching is achieved by including a Kelvin emitter terminal, resulting in even lower losses. In fact, when comparing the efficiency of the new TO-247-4L packages with conventional and standard products in a 3-phase inverter, loss is reduced by about 24% compared to standard products and by 35% over conventional products.	07.11.2024 13:30:00	Nov	news_2024-11-15_18.jpg	\images\news_2024-11-15_18.jpg	https://www.rohm.com/news-detail?news-title=2024-11-07_news_igbt&defaultGroupId=false	rohm.com
New Sales Office and Service Center in Sydney, Australia	Magna-Power Electronics has opened Magna-Power Ele...	12170	Industry News	New Sales Office and Service Center in Sydney, Australia	Magna-Power Electronics has opened Magna-Power Electronics ANZ in Sydney, Australia. The establishment of the Sydney office enhances Magna-Power's local presence, providing dedicated support for existing and prospective customers in the region. With a product line ranging from 1.25 kW to over 10 MW and more than 400,000 product configurations, the company's solutions are well-suited to meet the varied power requirements of key Australian applications, including electrolyzers, defence, mining, water treatment, industrial power electronics, transportation, among many others. Leading the new office are industry veterans David Champion and Brian Chapman, who bring over 60 years of combined experience in electrical engineering and technology. The investment in the Sydney office is said to underscore the company's commitment to providing regional services to a wider customer base in the growing APAC market.	07.11.2024 10:00:00	Nov	news_2024-11-15_5.jpg	\images\news_2024-11-15_5.jpg	https://magna-power.com/company/news/2024-11-07-magna-power-sales-office-and-service-center-in-sydney-australia	magna-power.com
100 V Automotive-Grade Devices for Automotive LiDAR	Innoscience has added two 100 V automotive-grade G...	12178	Product Release	100 V Automotive-Grade Devices for Automotive LiDAR	Innoscience has added two 100 V automotive-grade GaN devices. The company's INN100W135A-Q (R<sub>DS(on),max</sub> = 13.5 mΩ) and smaller package INN100W800A-Q (R<sub>DS(on),max = 80</sub> mΩ) are both certified to AEC-Q101 and optimized for LiDAR as well as for high power density DC/DC converters, and Class D audio applications in the automotive sector. The INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13 mm x 1.63 mm and 0.9 mm x 0.9 mm respectively, offer advantages in terms of size and power efficiency. Both devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Q<sub>g</sub> and Q<sub>oss</sub> are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m.	07.11.2024 08:30:00	Nov	news_2024-11-15_13.jpg	\images\news_2024-11-15_13.jpg	https://www.innoscience.com/site/details/966?el=mdnav	innoscience.com
60-V Variant of Power MicroModule Series	There's another generation of MagI³C-VDMM pow...	12182	Product Release	60-V Variant of Power MicroModule Series	There's another generation of MagI³C-VDMM power modules from Würth Elektronik: The input voltage range gives the new MicroModule a resistance to voltage transients on the 48 V bus. The adjustable output voltage ranges from 0.85 to 6 V with currents up to 0.3 A. The extended input voltage range of the Variable Step Down MicroModule from 3.5 to 60 V now covers bus voltages from 5 to 48 V, opening up applications from Point of Load (PoL) to direct 48 V bus voltage connection. So the MagI³C-VDMM series is suited as a replacement for linear regulators, for example in the power supply of interfaces, sensors, microcontrollers, microprocessors, DSPs and FPGAs. Operational areas include industrial, testing and measurement technology, medical devices and point-of-load DC/DC applications. Its efficiency of up to 86 percent supports "cool design", allowing its use in a temperature range from -40 to +105 °C. To save energy, the power module can be set to sleep mode using an additional pin, and the quiescent current is up to 3 µA. The integrated sync feature allows multiple Micromodules to synchronize to an external frequency while simultaneously meeting the requirements of EMC standard EN55032/CISPR32 Class B for radiated and conducted interference with verified filter combinations. The selectively controllable "spread spectrum" feature improves the EMC behavior.	06.11.2024 12:30:00	Nov	news_2024-11-15_17.jpg	\images\news_2024-11-15_17.jpg	https://www.we-online.com/en/components/products/MAGIC-VDMM	we-online.com
Strategic Partnership for Onboard Chargers and more	Nexperia has entered into a strategic partnership ...	12174	Industry News	Strategic Partnership for Onboard Chargers and more	Nexperia has entered into a strategic partnership with Kostal, which will enable it to produce wide bandgap devices that more closely match the exacting requirements of automotive applications. Under the terms of this partnership, Nexperia will supply, develop, and manufacture WBG power electronics devices which will be designed-in and validated by Kostal. The collaboration will initially focus on the development of SiC MOSFETs in topside cooled QDPAK packaging for onboard chargers in electric vehicles. "Nexperia has been a trusted supplier of silicon components to KOSTAL for many years and is delighted to enter into this strategic partnership that will now extend to wide bandgap devices", according to Katrin Feurle, Senior Director and Head of SiC Discretes & Modules. "KOSTAL will assist in validating our devices in its charging applications, thereby providing us with the type of invaluable 'real-world' data that will allow us to further enhance their performance".	05.11.2024 14:00:00	Nov	news_2024-11-15_9.jpg	\images\news_2024-11-15_9.jpg	https://www.nexperia.com/about/news-events/press-releases/Nexperia-and-KOSTAL-form-a-strategic-partnership-based-on-advancing-automotive-grade-wide-bandgap-devices	nexperia.com
Automotive-Grade High-Side Switches for BCMs and ZCUs	Novosense has announced a range of high-side switc...	12180	Product Release	Automotive-Grade High-Side Switches for BCMs and ZCUs	Novosense has announced a range of high-side switches for driving traditional resistive, inductive, and halogen lamp loads in automotive body control modules (BCM) as well as large capacitive loads commonly found in the first-level and second-level power distribution within zone control units (ZCU). At time of launch, the NSE34 and NSE35 families includes 26 single-, dual- and quad-channel devices developed for operation across 11 separate load currents intervals (11 A to sub-2 A). These devices have an R<sub>ds(on)</sub> resistance range from 8 mΩ to 140 mΩ and feature diagnostic and protection functions such as over-current protection and over-voltage clamping protection. All devices in the two families are fully compliant with multiple automotive standards, including AEC-Q100, AEC-Q100-006, AEC-Q100-012 Grade A, ISO7637, ISO16570 and CISPR25-2021 Class 5.	05.11.2024 10:30:00	Nov	news_2024-11-15_15.jpg	\images\news_2024-11-15_15.jpg	https://www.novosns.com/en/company-news-316	novosns.com
8.5 kW AI Data Center Power Supply Powered by GaN and SiC	Navitas Semiconductor has announced "the world's f...	12212	Product Release	8.5 kW AI Data Center Power Supply Powered by GaN and SiC	Navitas Semiconductor has announced "the world's first 8.5 kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98% efficiency", which is specifically intended for applications in next-generation AI and hyperscale data centers. The AI-optimized 54 V output PSU complies with Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications and utilizes high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs configured in 3-phase interleaved PFC and LLC topologies. The PSU's shift to a 3-phase topology for both the PFC and LLC (vs. 2-phase topologies used by competing PSUs) enables "the industry's lowest ripple current and EMI". Furthermore, the PSU is claimed to reduce the number of GaN and SiC devices by 25 % compared with the nearest competing system, which reduces the overall cost. The PSU has an input voltage range of 180 to 264 V<sub>AC</sub>, a standby output voltage of 12 V, and an operating temperature range of -5 oC to 45 oC. Its hold-up time at 8.5 kW is 10 ms, with 20 ms possible through an extender.	05.11.2024 08:30:00	Nov	news_2024-12-15_10v2.jpg	\images\news_2024-12-15_10v2.jpg	https://navitassemi.com/navitas-presents-worlds-first-8-5kw-ai-data-center-power-supply-powered-by-gan-and-sic/	navitassemi.com
1700 V GaN Switcher IC replaces 3 SiC Transistors	Power Integrations introduced a new member of its ...	12181	Product Release	1700 V GaN Switcher IC replaces 3 SiC Transistors	Power Integrations introduced a new member of its InnoMux™-2 family of single-stage, independently regulated multi-output offline power supply ICs. According to the company the device features "the industry's first 1700 V gallium nitride switch, fabricated using the company's proprietary PowiGaN™ technology". The 1700 V InnoMux-2 IC supports 1000 VDC nominal input voltage in a flyback configuration and achieves over 90 % efficiency in applications requiring one, two or three supply voltages. Each output is regulated within one percent accuracy, eliminating post regulators. The GaN device replaces SiC transistors in power supply applications such as automotive chargers, solar inverters, three-phase meters and a wide variety of industrial power systems. Radu Barsan, vice president of technology at Power Integrations, said, "Our rapid pace of GaN development has delivered three world-first voltage ratings in a span of less than two years: 900 V, 1250 V and now 1700 V. Our new InnoMux-2 ICs combine 1700 V GaN and three other recent innovations: independent, accurate, multi-output regulation; FluxLink™, our secondary-side regulation (SSR) digital isolation communications technology; and zero voltage switching (ZVS) without an active-clamp, which all but eliminates switching losses."	04.11.2024 11:30:00	Nov	news_2024-11-15_16.jpg	\images\news_2024-11-15_16.jpg	https://investors.power.com/news/news-details/2024/CORRECTING-and-REPLACING-Power-Integrations-Launches-1700-V-GaN-Switcher-IC-Setting-New-Benchmark-for-Gallium-Nitride-Technology/default.aspx	power.com
Oscilloscope and Generator Lines	Rigol Technologies introduced its DG5000 Pro Serie...	12179	Product Release	Oscilloscope and Generator Lines	Rigol Technologies introduced its DG5000 Pro Series Generators and DHO/MHO5000 Series Oscilloscopes. The DHO/MHO5000 Series brings more oscilloscope performance, while the DG5000 Pro generators are arbitrary waveform generators with higher figures of merit. Combining 12-bit resolution with up to 1 GHz bandwidth and 500 Mpts record length, up to 8 channels and mixed-signal configurations, the DHO/MHO5000 Series High-Resolution Oscilloscopes are available with configurations offering 4 or 8 analog input channels and either 500 MHz or 1 GHz bandwidth. These instruments deliver 4 GSamples/s maximum real-time sampling, with the 4-channel units providing that rate across all channels. For mixed-signal measurement applications, the MHO5000 Series models combine 4 or 6 analog input channels with 16 digital channels and similar bandwidth choices as the DHO5000 models. For additional utility, an integrated function generator is an available option for the 4-channel MHO5000 models. Offering 16-bit vertical resolution, up to 500 MHz maximum output frequency, 2.5 GSamples/s maximum sample rate and a 0.8 ns (800 ps) square wave rise time, the DG5000 Pro provides high-frequency waveforms and generates complex sequence generations. The DG5000 Pro Series delivers a maximum arbitrary waveform length of 128 Mpts/channel while supporting multi-pulse output, a variety of analog and digital modulation types, and IQ digital modulation. Sequence Mode is an option and enables the playback of intricate pattern segments, with looping of up to 512 cycles. Sequence Mode also enables complex functions like repeat, wait, event, and jump.	04.11.2024 09:30:00	Nov	news_2024-11-15_14.jpg	\images\news_2024-11-15_14.jpg	https://eu.rigol.com/	rigol.com
Next Generation of GaN Power Discretes	Infineon Technologies launched a family of high-vo...	12177	Product Release	Next Generation of GaN Power Discretes	Infineon Technologies launched a family of high-voltage discretes, the CoolGaN™ Transistors 650 V G5. Target applications for this new product family range from consumer and industrial switched-mode power supplies (SMPS) such as USB-C adapters and chargers, lighting, TV, data center and telecom rectifiers to renewable energy and motor drives in home appliances. The latest CoolGaN generation is designed as a drop-in replacement for the CoolGaN Transistors 600 V G1, however, with improved figures of merit. Compared to key competitors and previous product families from Infineon, the CoolGaN Transistors 650 V G5 offer up to 50 percent lower energy stored in the output capacitance (E <sub>oss</sub>), up to 60 percent improved drain-source charge (Q <sub>oss</sub>) and up to 60 percent lower gate charge (Q <sub>g</sub>) improving both hard- and soft-switching applications. This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case. The members of the high-voltage transistor product family offer a wide range of R <sub>DS(on)</sub> package combinations. Ten R <sub>DS(on)</sub> classes are available in various SMD packages, such as ThinPAK 5x6, DFN 8x8, TOLL and TOLT. In the future, CoolGaN will transition to 12-inch production.	04.11.2024 07:30:00	Nov	news_2024-11-15_12.jpg	\images\news_2024-11-15_12.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202411-017.html	infineon.com
8-Channel Driver and Photo Receiver Amplifier IC	Apex Microtechnology announced two devices in thei...	12176	Product Release	8-Channel Driver and Photo Receiver Amplifier IC	Apex Microtechnology announced two devices in their Precision IC product line: an 8-channel driver and a photo receiver amplifier IC. The devices provide supply voltages of up to 350 V and feature multi-channel architectures. Typical applications are e. g. piezoelectric transduction, capacitive actuation and LED drivers. The AIC1513 is a rigid general purpose high voltage driver IC with 8 high voltage push-pull outputs to drive capacitive and resistive loads such as piezoelectric transducers, electroluminescent devices and micro-mechanical actuators. The maximum operating voltage is 300V, and each output can handle currents up to 40 mA. The device has been designed for harsh industrial applications. The AIC1638 is an integrated receiver amplifier designed for high-sensitivity photo diodes used in applications like light barriers, smoke detectors, light curtains etc. Filtering out ambient light and amplifying the detected pulses from a photo diode, the conditioned signals are used for driving a current mirror output stage. Implementing an integrated polarity protection, the device can be used in a multiplexed configuration, simplifying the wiring of the application. It is suited for light sensing applications ranging from a few millimeters to several meters.	31.10.2024 06:30:00	Oct	news_2024-11-15_11.jpg	\images\news_2024-11-15_11.jpg	https://www.apexanalog.com/press/product-news-aic1513-aic1638.html	apexanalog.com
The next Generation of HIL Compatible Digital Twin	ABB has partnered with Typhoon HIL to create the D...	12167	Industry News	The next Generation of HIL Compatible Digital Twin	ABB has partnered with Typhoon HIL to create the DriveLab ACS880 HIL compatible digital twin. This collaboration is intended to bring a realistic, scalable, and easy to use real-time simulation platform to a wide range of industrial applications. DriveLab ACS880 is the next generation of Hardware-in-the-Loop (HIL) simulation technology. It is specifically tailored and geared towards simplifying the integration of ABB variable speed drives (VSD) systems. It will enable users to test and validate the system via a test automation capability which is a key component of top-tier customer support. HIL simulation is used to validate both component and system-level behavior of the drives and drive systems in real-world applications ranging from compressors, conveyers, and cranes to large scale energy storage, microgrids and more. The DriveLab ACS880 serves as a digital twin, integrating the control hardware, firmware, and software of the ACS880 drives with Typhoon HIL's high-fidelity digital models. These digital models virtually represent the ACS880 drive's hardware, including its connected components, such as the grid, motors, filters, batteries, protection devices, and the electro-mechanical elements.	30.10.2024 07:00:00	Oct	news_2024-11-15_2.png	\images\news_2024-11-15_2.png	https://new.abb.com/news/detail/120505/abb-and-typhoon-hil-create-drivelab-acs880-the-next-generation-of-hil-compatible-digital-twin	abb.com
The World's thinnest Silicon Power Wafer	Infineon Technologies has reached a breakthrough i...	12175	Industry News	The World's thinnest Silicon Power Wafer	Infineon Technologies has reached a breakthrough in handling and processing the thinnest silicon power wafers ever manufactured, with a thickness of only 20 µm and a diameter of 300 mm, in a high-scale semiconductor fab. The ultra-thin silicon wafers are only a quarter as thick as a human hair and half as thick as current state-of-the-art wafers of 40-60 µm. According to Infineon this will "significantly help increase energy efficiency, power density and reliability in power conversion solutions for applications in AI data centers as well as consumer, motor control and computing applications". Halving the thickness of a wafer reduces the wafer's substrate resistance by 50 percent, reducing power loss by more than 15 percent in power systems, compared to solutions based on conventional silicon wafers. For high-end AI server applications, where growing energy demand is driven by higher current levels, this is particularly important in power conversion: Here voltages have to be reduced from 230 V to a processor voltage below 1.8 V. The ultra-thin wafer technology boosts the vertical power delivery design, which is based on vertical Trench MOSFET technology and allows a very close connection to the AI chip processor, thus reducing power loss and enhancing overall efficiency. This was achieved by applying a unique wafer grinding approach, since the metal stack that holds the chip on the wafer is thicker than 20 µm. The technology has been qualified and applied in Infineon's Integrated Smart Power Stages (DC/DC converter) which have already been delivered to first customers.	29.10.2024 15:00:00	Oct	news_2024-11-15_10.jpg	\images\news_2024-11-15_10.jpg	https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202410-013.html	infineon.com
Strategic Technology Partnership with McLaren Formula E Team	TDK Corporation and McLaren Racing have started a ...	12173	Industry News	Strategic Technology Partnership with McLaren Formula E Team	TDK Corporation and McLaren Racing have started a strategic multi-year, technology partnership to combine their technological expertise and build a high-performance future through the cutting-edge electric vehicle (EV) motorsport platform of Formula E, and ever-growing esports field. TDK has formed a partnership with the NEOM McLaren Formula E Team and McLaren Shadow F1 Sim Racing Team. As a technology partner, TDK are using motorsport and racing as a testbed to advance technologies that could help shape the future of EV, gaming and beyond. According to the companies involved, "Formula E serves as a testbed for cutting-edge EV technology that has the potential to influence the future general EV market". TDK aims to extend this technology collaboration approach with McLaren to the gaming field as well.	29.10.2024 13:00:00	Oct	news_2024-11-15_8.png	\images\news_2024-11-15_8.png	https://www.tdk.com/en/news_center/press/20241029_01.html	tdk.com
Early Bird Registration Now Open for the 40th Annual APEC 2025 in Atlanta	Early bird registration is now open for the 40th A...	12169	Event News	Early Bird Registration Now Open for the 40th Annual APEC 2025 in Atlanta	Early bird registration is now open for the 40th Annual Applied Power Electronics Conference (APEC), running March 16-20 at the Georgia World Convention Center in Atlanta. The APEC 2025 conference and exposition gathers power electronics engineers, academics and students from all over the world to learn about the latest research, technologies and products. Early bird registration ends Jan. 13, 2025. Full registration includes access to the APEC Technical Program. Comprising nearly 800 paper presentations, sessions and seminars, the conference offers a broad scope of content: APEC Plenary Session (visionary talks by distinguished speakers), Technical Sessions (lecture sessions and dialogue sessions based on peer-reviewed papers), Industry Sessions (presentations showcasing work in all areas of power electronics), Professional Education Seminars (in-depth seminars on practical aspects of power electronics), Debate – formerly RAP – Sessions (expert panelists identify three hot topics for friendly debate) as well as Exhibitor Presentations (exhibitor companies highlight new products and technologies). Also included in the full registration package is admission to the APEC 2025 Exposition and Special Events. The 2025 exposition will gather nearly 300 exhibitors to the sold-out exhibit floor. With its lively, interactive trade show environment, APEC 2025 offers participation in such events as the MicroMouse contest, the FIRST Robotics demonstration and the Wednesday evening Social Event celebrating APEC's 40th anniversary.	29.10.2024 09:00:00	Oct	news_2024-11-15_4.jpg	\images\news_2024-11-15_4.jpg	https://apec-conf.org/attendees/registration/	apec-conf.org
Call for Proposals for Innovation Award & Young Engineer Award	The Semikron Danfoss Innovation Award and the Semi...	12168	Industry News	Call for Proposals for Innovation Award & Young Engineer Award	The Semikron Danfoss Innovation Award and the Semikron Danfoss Young Engineer Award are given for outstanding innovations in projects, prototypes, services or novel concepts in the field of power electronics in Europe, combined with notable societal benefits in form of supporting environmental protection and sustainability by improving energy efficiency and conservation of resources. The prizes are awarded in cooperation with the European ECPE Network. With the award Semikron Danfoss wants to motivate people of all ages and organizations of any legal status to deal with innovations in power electronics, a key technology of the 21st century, in order to improve environmental protection and sustainability by energy efficiency and conservation of resources. The Semikron Danfoss Innovation and Young Engineer Prizes 2025 will be awarded in the frame of the ECPE Annual Event in April 2025. A single person or a team of researchers can be awarded. Semikron Danfoss Innovation Award includes prize money of EUR 10,000, while the Semikron Danfoss Young Engineer Award for researchers who have not yet completed their 30th year of age includes prize money of EUR 3,000. The award targets at projects, prototypes, services and novel concepts developed in Europe, which did not yet appear on the market, which are used in a novel application, or which form an absolute novelty, and therewith fulfil the requirement to be extraordinary and remarkable. To apply for the awards own applications as well as proposals from third parties are welcomed. The deadline for submission ends on 31.01.2025.	28.10.2024 08:00:00	Oct	news_2024-11-15_3.png	\images\news_2024-11-15_3.png	https://www.semikron-danfoss.com/about-semikron-danfoss/news-press/detail/announcement-and-call-for-proposals-for-semikron-danfoss-innovation-award-semikron-danfoss-young-engineer-award.html	semikron-danfoss.com
3D Power Design and Manufacturing Symposium (3D-PEIM) 2025	The PSMA Packaging and Manufacturing Committee ann...	12172	Event News	3D Power Design and Manufacturing Symposium (3D-PEIM) 2025	The PSMA Packaging and Manufacturing Committee announce its Fifth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM-20235). 3D-PEIM will take place July 8–10, 2025 at the National Renewable Energy Laboratory (NREL) in Golden, Colorado. The symposium is designed for any engineer or manager involved in the design and manufacturing of high-density power sources using 3D technology. It will feature key speakers and technical sessions focused on increasing the power density and performance of power solutions. Plenary presentations will include: "Beyond 2030: Powering the E-Powertrain with High-Value and High-Efficiency Power Conversion Systems - A BorgWarner Perspective", presented by Harsha Nanjundaswamy, BorgWarner, "Advanced Packaging to System Integration - Trends and Challenges", presented by Devan Iyer, IPC and "The Power Delivery and Energy Storage Challenge in Advanced Packaging", presented by Subramanian Iyer, University of California Los Angeles. Attendees are also invited to tour the power electronics facilities of the National Renewable Energy Laboratory.	25.10.2024 12:00:00	Oct	news_2024-11-15_7.png	\images\news_2024-11-15_7.png	https://www.3d-peim.org/	3d-peim.org
Caroline Pannier to take over as Exhibition Director of electronica	With effect from December 1, 2024, Caroline Pannie...	12151	People	Caroline Pannier to take over as Exhibition Director of electronica	With effect from December 1, 2024, Caroline Pannier will become the new Exhibition Director of electronica. She succeeds Katja Stolle, who will in future take over as Executive Director of Technology Fairs at Messe München from Dr. Martin Lechner, who is retiring in December. Caroline Pannier has worked at Messe München in the field of electronics trade fairs for almost 13 years. The business graduate with an LL.M in technology law has successfully demonstrated her expertise there, among other things, as Exhibition Director of productronica and most recently as Deputy Exhibition Director of electronica. "As the most important international meeting place for the industry, electronica brings together innovations and trends, and provides new stimulus. I am very much looking forward to working with my team and in close cooperation with the industry to further develop the trade fair and set new trends," says Caroline Pannier about her new role.	24.10.2024 09:00:00	Oct	news_2024-11-01_4.jpg	\images\news_2024-11-01_4.jpg	https://electronica.de/en/trade-fair/journalists/press-releases/detail/caroline-pannier-to-take-over-as-exhibition-director-of-electronica.html	electronica.de
Zero-flux DC Current Transducer selected for technical Facelift and Renovation Program	For a for technical facelift and renovation progra...	12148	Industry News	Zero-flux DC Current Transducer selected for technical Facelift and Renovation Program	For a for technical facelift and renovation program of its North Area (NA), CERN has selected the DM1200 zero-flux DC current transducer (DCCT) from Danisense for use in the CERN-designed POLARIS power converters. Comments Miguel Cerqueira Bastos, Section Leader in the Electrical Power Converter group at CERN: "The DM1200 is a current output DCCT and, as such, it provides a current signal proportional to the measured current, which in this case is the output current of the POLARIS power converter. We convert the output current from the DCCT into a voltage signal, then digitize it, and use it in a digital current loop to precisely control the current in the magnets of the NA experimental lines." Based on Danisense's ultra stable closed loop flux gate technology, the DM1200 current transducer benefits from very low offset and ultra low drift. The device was successfully evaluated by CERN for use with DC currents up to 2kA with a linearity error less than 1 ppm. With its specific design it provides high resolution for precise monitoring, reliable and consistent performance, and ruggedness for durability. Danisense's DM1200 DCCT has been chosen for the new POLARIS power converter series because of its excellent balance between performance and cost at primary currents as high as 2kA.	23.10.2024 06:00:00	Oct	news_2024-11-01_1.jpg	\images\news_2024-11-01_1.jpg	https://danisense.com/	danisense.com
EMI Suppression in the Low-Frequency Range directly on the Busbar	With the WE-OEFA-LFS ferrite, Würth Elektronik has...	12164	Product Release	EMI Suppression in the Low-Frequency Range directly on the Busbar	With the WE-OEFA-LFS ferrite, Würth Elektronik has released an oval-shaped ferrite ring for interference suppression at low frequencies. Thanks to its individual shape, the ferrite ring is able to slide over busbars for interference suppression. Its MnZn core material enables it to suppress low-frequency interference. The main application area for the new ferrite is electric vehicles. The AEC-Q200-certified WE-OEFA-LFS, with an operating temperature range of -40 to 105 °C, is designed for high-current applications and the frequency range from 1 to 100 MHz. This enables the ferrite to suppress electromagnetic interference in battery management systems, inverters, on-board chargers, cable harnesses and many other applications. The latest interference suppression ferrite in Würth Elektronik's portfolio measures 15.6 × 65.4 × 35.4 mm³, while the cable or busbar it encloses can measure 43 × 13 mm².	22.10.2024 14:30:00	Oct	news_2024-11-01_17.jpg	\images\news_2024-11-01_17.jpg	https://www.we-online.com/en/news-center/press/press-releases?d=WE-OEFA-LFS	we-online.com
Global Distribution Agreement regarding Ideal Switch Products	Menlo Microsystems (Menlo Micro), a company claimi...	12155	Industry News	Global Distribution Agreement regarding Ideal Switch Products	Menlo Microsystems (Menlo Micro), a company claiming to be "responsible for bringing to market the greatest electronic component innovation since the transistor with its Ideal Switch® technology", announced a global distribution agreement with DigiKey. Under the terms of the agreement, DigiKey becomes a franchised distributor for worldwide marketing and sales of Menlo Micro's Ideal Switch products.	22.10.2024 13:00:00	Oct	news_2024-11-01_8.jpg	\images\news_2024-11-01_8.jpg	https://menlomicro.com/newsroom/menlo-micro-announces-global-distribution-agreement-with-digikey-to-promote-and-deliver-ideal-switch-products	menlomicro.com
Collaboration to expand Consulting Services	Foxy Power announced a partnership with DL Consult...	12154	Industry News	Collaboration to expand Consulting Services	Foxy Power announced a partnership with DL Consulting. This collaboration is based on technological business development paired with industry-wide market analyses to enable faster success in the market. By combining the expertise of both companies, it will allow for superior consulting experience and will give the common customer base access to the specialist from the industry. In its consulting services DL Consulting specializes on wide bandgap solutions like SiC and GaN including market research, power electronics design, acquisition services, go-to-market strategies and advisory to institutional investors. The company will deliver its know-how and services to Foxy Power's customer base to enable a better customer journey. Foxy Power, an advocate for startups as well as other companies at the forefront of disruptive technologies by delivering worldwide business development, sales, and strategy services. Driving the concept of product value maximization, Foxy Power enhances manufacturers' sales outreach, emphasizing an application-centric approach.	22.10.2024 12:00:00	Oct	news_2024-11-01_7.jpg	\images\news_2024-11-01_7.jpg	https://consulting.liesabeths.de/	consulting.liesabeths.de
Quick charging EVs from Household Power Outlets with 99% Efficiency	On the EnerConnect project, researchers at Fraunho...	12171	Industry News	Quick charging EVs from Household Power Outlets with 99% Efficiency	On the EnerConnect project, researchers at Fraunhofer IZM are testing bidirectional blocking gallium nitride (GaN) transistors to design a system that could be used with the next generation of active converters and rectifiers. The hardware removes the need for a separate conversion stage and can achieve record 99% efficiency. As part of the EnerConnect project funded by Germany's Ministry of Education and Research, scientists at the Fraunhofer Institute for Reliability and Microintegration IZM and the Technical University of Berlin have teamed up with their industry partners Delta Electronics Inc., BIT GmbH, and Infineon Technologies AG to produce a system with bidirectional blocking GaN transistors. These transistors bring substantial benefits in terms of power density and efficiency and promise to make charging electric vehicles from commonplace home sockets much more effective. The buck-boost converter that the researchers are working on has never yet played much of a role in power electronics, as it would have been far too complex with conventional components. It can work with higher or lower input voltages. Current practice for electric vehicles is to have active rectifiers operating at high voltages. The new circuit currently being worked on at Fraunhofer IZM would allow the voltage to be lower, in turn reducing the switching losses in the transistor. The researchers are working towards a target switching frequency of 300 kHz, which would allow power density to be ramped up to 15 kW per liter – a full 800% over the chargers currently in the market.	21.10.2024 11:00:00	Oct	news_2024-11-15_6.jpg	\images\news_2024-11-15_6.jpg	https://www.izm.fraunhofer.de/en/news_events/tech_news/enerconnect.html	izm.fraunhofer.de
AEC-Q200 Compliant, Automotive Grade Multilayered Varistor Series	Bourns announced its Model BVRA Series AEC-Q200 co...	12165	Product Release	AEC-Q200 Compliant, Automotive Grade Multilayered Varistor Series	Bourns announced its Model BVRA Series AEC-Q200 compliant, automotive grade multilayered varistors. These low voltage varistors feature transient energy absorption due to improved energy volume distribution and power dissipation. Designed specifically for use in automotive circuits requiring surge protection, the new series can also be applied to protect other integrated circuits and components such as power supplies, entertainment electronics as well as CAN, LIN and Flexray-based modules. The Model BVRA Series is available with working voltages from 5.5 to 85 VDC and provides a response time of less than 0.5 ns to help ensure prompt energy diversion during transient events. Offered in a range of compact 0402, 0603, 0805 and 1206 SMD packages, the new varistors have an insulator overcoat designed to help enhance efficiency and streamline integration. In addition, these models meet the IEC 61000-4-5 standard, and deliver stable leakage current for a high reliability, consistent overvoltage protection solution.	17.10.2024 15:30:00	Oct	news_2024-11-01_18.jpg	\images\news_2024-11-01_18.jpg	https://www.bourns.com/news/press-releases/pr%2f2024%2f10%2f17%2fbourns-announces-aec-q200-compliant--automotive-grade-multilayered-varistor-series	bourns.com
300 W Power Supplies in 3" x 5" Packages	TRACO Power announced TXO 300, a compact 300 W AC/...	12161	Product Release	300 W Power Supplies in 3" x 5" Packages	TRACO Power announced TXO 300, a compact 300 W AC/DC Power supply in an 3" x 5" open-frame construction. The TXO line specifically focuses on industrial power supplies. With an efficiency of up to 92 % these models are designed to meet the ErP directive (< 0.3 W no load power consumption). Features include internal EN55032 class B filter, as well as EMC characteristics dedicated for applications in industrial/automation and test & measurement fields. While the input range is 85-264 V<sub>AC</sub> it is full load convection cooled from -20 °C to +50 °C, and protection class II prepared. The supply units offer 3000 V<sub>AC</sub> reinforced I/O isolation, an internal EN55032 class B filter, short circuit and overvoltage protection. They are EN 61000-3-2 compliant and according to IEC/EN/UL 62368-1 safety-approved.	17.10.2024 11:30:00	Oct	news_2024-11-01_14.jpg	\images\news_2024-11-01_14.jpg	https://www.tracopower.com/int/txo	tracopower.com
Electronic Fuses (eFuse ICs) for HV Power Management	Toshiba Electronics has launched two additional el...	12160	Product Release	Electronic Fuses (eFuse ICs) for HV Power Management	Toshiba Electronics has launched two additional electronic fuses (eFuse ICs) named TCKE903NL and TCKE905ANA, which are reusable, thereby reducing maintenance costs and recovery time for equipment repairs, and support various functions to protect power supply line circuits. The eFuses are suited for a wide range of power management applications while operating with a switch ON resistance of typically 34 mΩ and an output current of up to 4.0 A. The products are suited for electronic slew rate control and power supply line circuit protection in industrial applications such as servers, professional kitchen equipment and more. The TCKE9 series of 25 V input voltage eFuse ICs offers two product types: an auto-retry type that allows the eFuse IC to automatically recover the circuit itself, and a latch type that is recovered by an external signal. Two different clamping voltage levels are available, i.e. 3.8 V and 5.7 V. The current limit and voltage clamp functions of the TCKE9 series protect the circuit against overcurrent and overvoltage conditions, including over temperature and short-circuit protection features to protect the circuit by immediately shutting off when abnormal heat is generated in the circuit or an unexpected short-circuit condition occurs. As Toshiba intends to obtain IEC 62368-1 certification, the international safety standard for ICT and AV equipment, the eFuse ICs will also simplify and accelerate certification testing process of the end equipment. The TCKE9 series is available in a thin and compact WSON8 package measuring 2.0 mm × 2.0 mm x 0.8 mm.	17.10.2024 10:30:00	Oct	news_2024-11-01_13.jpg	\images\news_2024-11-01_13.jpg	https://toshiba.semicon-storage.com/eu/company/news/2024/10/power-management-ics-20241017-1.html	toshiba.semicon-storage.com
AC/DC Flyback Controllers	Nexperia introduced a series of AC/DC flyback cont...	12159	Product Release	AC/DC Flyback Controllers	Nexperia introduced a series of AC/DC flyback controllers. The NEX806/8xx and NEX8180x are designed for GaN-based flyback converters in devices such as power delivery (PD) chargers, adapters, wall sockets, strip sockets, industrial power and auxiliary power supplies, and other AC/DC conversion applications requiring high power density. The NEX806xx/NEX808xx are quasi-resonant/multi-mode flyback controllers which operate from a V<sub>CC</sub> range between 10-83 V, while the NEX81801/NEX81802 are adaptive synchronous rectifier controllers. These ICs can be used in combination with Nexperia's NEX52xxx PD controllers and other discrete power devices to deliver a turn-key flyback converter solution that optimizes the current sense voltage level and PFM mode, reduces standby power, and achieves high efficiency across the entire load range. The primary side controller can be used to drive a silicon MOSFET or GaN transistor directly. These ICs employ the TSOT23-6 flip-chip package and provide an over temperature protection (OTP) function as well as additional protection features.	17.10.2024 09:30:00	Oct	news_2024-11-01_12.jpg	\images\news_2024-11-01_12.jpg	https://www.nexperia.com/about/news-events/press-releases/-AC-DC-flyback-controllers-from-Nexperia-enable-higher-power-density-GaN-based-flyback-converters	nexperia.com
98 % Efficiency at 158 kW/l: Automotive-grade Power Modules deliver 48 V in 800-V EVs	Vicor has released three automotive-grade power mo...	12156	Product Release	98 % Efficiency at 158 kW/l: Automotive-grade Power Modules deliver 48 V in 800-V EVs	Vicor has released three automotive-grade power modules for 48V electrical vehicle systems, which are claimed to "deliver industry-leading power density, and support automotive OEMs and tier one production in 2025". The modules named BCM®6135, DCM™3735 and PRM™3735 use AEC-Q100 certified Vicor-designed ICs and have completed the PPAP process with automotive customers. Operating with a power density of 158 kW/l the BCM6135 is a 98 % efficient 2.5 kW BCM bus converter which converts 800 V from the traction battery to 48 V to provide a safety extra-low voltage (SELV) power supply for the vehicle. The BCM6135 internally provides the isolation between high voltage and low voltage which creates a significant reduction in terms of space required for the DC/DC conversion. The bidirectional rapid current transient response rate of 8 MA/s allows the BCM6135 to replace a 48 V battery - by serving as a virtual 48 V battery in the xEV vehicle and reducing vehicle costs by up to $100 and the vehicle mass by up to 25 kg. The DCM3735 2.0 kW DCM DC/DC converter transforms an unregulated 48 V input with a power density of 300 kW/l into a regulated 12 V output, which can be trimmed within a range of 8 – 16 V. The PRM3735 is a 2.5 kW PRM regulator for 48 V power that is 99.2% efficient with 260 kW/l power density. When used as a part of the 48 V zonal architecture, the DCM3735 can be mounted remotely to create a local 12 V supply in a vehicle zone. This application method allows the PDN designer to effectively support 12 V loads while achieving up to 90 % of the cost and weight savings that come from transitioning to a 48 V bus. These modules can be arranged in over 300 configurations.	16.10.2024 06:30:00	Oct	news_2024-11-01_9.jpg	\images\news_2024-11-01_9.jpg	https://www.vicorpower.com/press-room/new-high-density-automotive-grade-power-modules/	vicorpower.com
AC programmable Power Sources	The GENESYS™ AC (GAC) and GENESYS™ AC ...	12163	Product Release	AC programmable Power Sources	The GENESYS™ AC (GAC) and GENESYS™ AC PRO (GAC-PRO) series of 2 kVA and 3 kVA rated programmable AC power sources from TDK-Lambda are claimed to provide the highest power density for a fully featured programmable AC power source with a 1U chassis height. They offer the ability to allow AC, DC, or combined AC+DC operation while allowing full-rated power and current in DC modes, as well as advanced functions such as waveform generation and harmonics analysis as standard. The GENESYS AC PRO also includes real-time analog control functionality necessary for more complex test scenarios, such as hardware in the loop (HIL). Other applications include automated test equipment, avionics airborne equipment, aircraft electrical power, defence (RTCA, Boeing, Airbus Standards), automotive, e-mobility, and power source testing. 2 kVA and 3 kVA units may be user-combined for additional power and to provide multiple phase outputs. The front panel controls can be made through the use of a capacitive touch display. Multiple languages are catered for, including, Chinese, English, French, German, Japanese, Korean, and Spanish. As standard, LAN, USB, RS232, RS485, and Analog Programming / Monitoring are provided, with optional IEEE / GPIB. The included remote GUI software allows the user full control, sequence programming, plus the option to use pre-programmed test standards for common IEC, aerospace, and marine tests.	15.10.2024 13:30:00	Oct	news_2024-11-01_16.jpg	\images\news_2024-11-01_16.jpg	https://www.emea.lambda.tdk.com/uk/products/genesys-ac-source	lambda.tdk.com
SiC Company receives Funding and more to invest $ 2.5 Billion in the US	The U.S. Department of Commerce and Wolfspeed have...	12150	Industry News	SiC Company receives Funding and more to invest $ 2.5 Billion in the US	The U.S. Department of Commerce and Wolfspeed have signed a non-binding preliminary memorandum of terms (PMT) for up to $ 750 million in proposed direct funding under the CHIPS and Science Act. In addition, a consortium of investment funds have agreed to provide Wolfspeed an additional $ 750 million of new financing. Together these investments support Wolfspeed's long-term growth plans and bolster US domestic production of silicon carbide to power clean energy systems. In addition, Wolfspeed expects to receive $1 billion of cash tax refunds from the advanced manufacturing tax credit under the CHIPS and Science Act (section 48D), giving the com¬pany, in total, access to up to $ 2.5 billion of expected capital to support the expansion of silicon carbide manufacturing in the United States. According to Gregg Lowe, CEO of Wolfspeed, this is "not just about growth for Wolfspeed - it's about driving technological advancement that powers the future." These proposed funds, which are expected to be received upon milestone achievements in the coming years, would enable Wolfspeed to complete its multi-billion-dollar greenfield U.S. capacity expansion plan. In addition to the proposed direct funding, Wolfspeed intends to benefit from the U.S. Treasury Department Investment Tax Credit of up to 25% of the qualified capital expenditures primarily related to its construction and installation of equipment at The John Palmour Manufacturing Center for Silicon Carbide in Siler City, NC and comple¬tion of the Mohawk Valley Fab M-Line West Expansion in Utica, NY.	15.10.2024 08:00:00	Oct	news_2024-11-01_3.jpg	\images\news_2024-11-01_3.jpg	https://www.wolfspeed.com/company/news-events/news/wolfspeed-announces-750m-in-proposed-funding-from-us-chips-act-and-additional-750m-from-investment-group-led-by-apollo-galvanizing-global-leadership-in-delivering-next-generation-silicon-carbide/	wolfspeed.com
Combining Silicon and Silicon Carbide in a Power Module for EVs	Infineon Technologies is introducing the HybridPAC...	12157	Product Release	Combining Silicon and Silicon Carbide in a Power Module for EVs	Infineon Technologies is introducing the HybridPACK™ Drive G2 Fusion, trying to establish "a new power module standard for traction inverters in the e-mobility sector". The HybridPACK Drive G2 Fusion is a plug'n'play power module that implements a combination of silicon and SiC technologies. One of the main differences between silicon and SiC in power modules is that SiC has a higher thermal conductivity, breakdown voltage and switching speed, making it more efficient, but also more expensive than silicon-based power modules. With the new module, the SiC content per vehicle can be reduced, while maintaining vehicle performance and efficiency at a lower system cost. The company claims that "system suppliers can realize nearly the system efficiency of a full SiC solution with only 30 percent SiC and 70 percent silicon area". The HybridPACK Drive G2 Fusion module features up to 220 kW in the 750 V class over the entire temperature range from -40 °C to +175 °C.	15.10.2024 07:30:00	Oct	news_2024-11-01_10.jpg	\images\news_2024-11-01_10.jpg	https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFATV202410-010.html	infineon.com
Capacitors for tough Conditions	Rutronik now offers the C4AQ-P capacitors from Kem...	12162	Product Release	Capacitors for tough Conditions	Rutronik now offers the C4AQ-P capacitors from Kemet for use in particularly challenging environments. They function reliably in a temperature range of -55 °C to +125 °C and a voltage range of 450 V<sub>DC</sub> to 1600 V<sub>DC</sub>. In addition, the capacitors have self-healing capabilities. They are AEC-Q200 qualified, THB (temperature-humidity bias) tested and are suited for applications in the automotive industry, in renewable energy systems or in energy storage systems. They are available in the capacitance range of 4.7 nF to 8.2 nF with an expected operating life at 125 °C of 4000 hours. Cable spacing is 27.5 mm to 52.5 mm.	14.10.2024 12:30:00	Oct	news_2024-11-01_15.jpg	\images\news_2024-11-01_15.jpg	https://www.rutronik24.com/product/kemet/c4aqobu4500p11j/16128433.html	rutronik24.com
GaN power ICs with Autonomous EMI Control and loss-less Sensing	Navitas announced GaNSlim™, a new generation...	12158	Product Release	GaN power ICs with Autonomous EMI Control and loss-less Sensing	Navitas announced GaNSlim™, a new generation of integrated GaN power ICs integrating drive, control, and protection, with integrated EMI control and loss-less current sensing, all within a high thermal performance proprietary DPAK-4L package. Additionally, with a startup current below 10 µA, GaNSlim devices are compatible with industry-standard SOT23-6 controllers and eliminate HV startup. Integrated features such as loss-less current sensing eliminate external current sensing resistors, while over-temperature protection increases system robustness and auto sleep-mode raises light and no-load efficiency. Autonomous turn-on/off slew rate control improves efficiency and power density while reducing external component count, system cost and EMI. The DPAK package enables 7 °C lower temperature operation versus conventional alternatives, supporting high-power-density designs with ratings up to 500 W. Target applications include chargers for mobile devices and laptops, TV power supplies, lighting, etc. Devices in the NV614x GaNSlim family are rated at 700 V with R<sub>DS(ON)</sub> ratings from 120 mΩ to 330 mΩ and are available in versions optimized for both isolated and non-isolated topologies.	14.10.2024 08:30:00	Oct	news_2024-11-01_11.jpg	\images\news_2024-11-01_11.jpg	https://navitassemi.com/navitas-ganslim-power-ics-drive-ease-of-use-system-cost-and-energy-savings-in-mobile-consumer-and-home-appliance/	navitassemi.com
3D Power Design and Manufacturing Symposium (3D-PEIM) 2025	The PSMA Packaging and Manufacturing Committee is ...	12149	Event News	3D Power Design and Manufacturing Symposium (3D-PEIM) 2025	The PSMA Packaging and Manufacturing Committee is pleased to announce its Fifth International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM-20235). 3D-PEIM will take place July 8–10, 2025 at the National Renewable Energy Laboratory (NREL) in Golden, Colorado. The Symposium is designed for any engineer or manager involved in the design and manufacturing of high-density power sources using 3D technology. It will feature key speakers and technical sessions focused on increasing the power density and performance of power solutions. <br>Plenary presentations will include: <br>- Beyond 2030: Powering the E-Powertrain with High-Value and High-Efficiency Power Conversion Systems - A BorgWarner Perspective (Presenter: Harsha Nanjundaswamy, BorgWarner) <br>- Advanced Packaging to System Integration - Trends and Challenges (Presenter: Devan Iyer, IPC) <br>- The Power Delivery and Energy Storage Challenge in Advanced Packaging (Presenter: Subramanian Iyer, University of California Los Angeles) <br>Attendees are also invited to tour the world-class power electronics facilities of the National Renewable Energy Laboratory.	14.10.2024 07:00:00	Oct	news_2024-11-01_2.jpg	\images\news_2024-11-01_2.jpg	https://www.3d-peim.org/	3d-peim.org
125 V High-Side Gate Driver: Protection by Disconnecting	In battery-powered applications such as motor driv...	12144	Product Release	125 V High-Side Gate Driver: Protection by Disconnecting	In battery-powered applications such as motor drives and SMPS, the power supply architecture often requires that a module can be disconnected from the main supply rail when a fault occurs in that module. High-side disconnect switches (e. g. MOSFETs) can prevent a load short circuit from affecting the battery. Infineon Technologies has now introduced the EiceDRIVER™ 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault. The device is said to "provide fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities". The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package and includes overcurrent protection, adjustable current setting threshold, time delay and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions. The 1EDL8011 has a operating voltage range of 8 V to 125 V and a gate sinking current of up to 1 A, while the off-mode quiescent current is 1 µA.	10.10.2024 12:30:00	Oct	news_2024-10-15_15.jpg	\images\news_2024-10-15_15.jpg	https://www.infineon.com/cms/en/product/power/gate-driver-ics/high-side-drivers/1edl8011/	infineon.com
Partnership to improve Wireless Power with Gallium Nitride Power Semiconductors	Infineon Technologies announced a partnership with...	12152	Industry News	Partnership to improve Wireless Power with Gallium Nitride Power Semiconductors	Infineon Technologies announced a partnership with Canada-based AWL-Electricity, a pioneer in MHz resonant capacitive coupling power transfer technology. Infineon provides AWL-E with CoolGaN™ GS61008P allowing the development of advanced wireless power solutions, enabling new ways to solve power challenges in various industries. The partnership combines Infineon's gallium nitride (GaN) technology with AWL-E's MHz resonant capacitive coupling power transfer system, achieving industry-benchmark wireless power efficiencies. Infineon's GaN transistor technology offers highest efficiency and highest power density while operating at highest switching frequencies. This enables AWL-E to increase its system lifetime, reduces downtime and operating costs, and improves ease-of-use for consumers. In the automotive sector, the technology enables a new level of interior experiences and seat dynamics. In industrial systems, it provides near-unconstrained levels of design freedom, such as for automated guided vehicles or robotic applications. Additionally, the technology allows for a fully sealed system design, eliminating the need for charging ports which contributes to reducing global consumption of batteries.	10.10.2024 10:00:00	Oct	news_2024-11-01_5.jpg	\images\news_2024-11-01_5.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202410-005.html	infineon.com
BMS Solutions based on 100 V Bi-directional GaN Technology	Innoscience Technology has launched another genera...	12140	Product Release	BMS Solutions based on 100 V Bi-directional GaN Technology	Innoscience Technology has launched another generation of battery management system (BMS) solutions based on VGaN™ technology. With no parasitic body diode and bidirectional control, one single bi-directional (VGaN) device from Innoscience is claimed to be able to "effectively replace two traditional MOS Silicon pairs". The VGaN series brings these features to Over Voltage Protection (OVP) and BMS applications. A 48 V/180 A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design adopts the company's latest 100 V VGaN product, the INV100FQ030A, which is packaged in a 4 mm x 6 mm² FCQFN and offers a maximum on-resistance of 3.2 mΩ. No heat sink is required with a maximum temperature rise of less than 50°C. The 16-string charging and discharging battery protection system uses the controllable bidirectional conduction and cut-off features of VGaN, enabling four operational states: normal charging and discharging, charging protection, discharging protection, and sleep mode. With 16 VGaNs it is said to be possible to replace 18 pairs of Silicon MOSFETs (36 in total). This 48 V/18 0A high-side BMS solution is suited for home batteries, portable charging station, e-scooters, e-bikes etc., optimizing battery life and safety through efficient charge and discharge control. It reduces temperature rise and system costs while ensuring a compact, portable design.	10.10.2024 08:30:00	Oct	news_2024-10-15_11.jpg	\images\news_2024-10-15_11.jpg	https://www.innoscience.com/site/product?el=b1	innoscience.com
Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection	Littlefuse announced the SMFA Asymmetrical Series ...	12145	Product Release	Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection	Littlefuse announced the SMFA Asymmetrical Series Surface-Mount TVS Diode, which is claimed to be "the first-to-market asymmetrical TVS solution specifically designed to protect Silicon Carbide MOSFET gates from overvoltage events. The SMFA Asymmetrical Series is engineered specifically for the unique gate protection requirements of SiC MOSFETs. Unlike traditional solutions that require multiple Zener or TVS diodes, the SMFA Series protects against ringing and overshoot phenomena in gate drive circuits using a single component. The devices are suited for AI and data center power supplies, EV infrastructure power system and industrial equipment power supplies.	08.10.2024 13:30:00	Oct	news_2024-10-15_16.jpg	\images\news_2024-10-15_16.jpg	https://www.littelfuse.com/about-us/news/news-releases/2024/littelfuse-unveils-industrys-first-asymmetrical-tvs-diode-series-for-sic-mosfet-gate-protection.aspx	littelfuse.com
High Frequency GaN Inverter Demonstrator for Automotive	QPT wins a grant for a new Project called VERDE to...	12136	Industry News	High Frequency GaN Inverter Demonstrator for Automotive	QPT wins a grant for a new Project called VERDE to develop a high frequency, 400V/60kW GaN inverter demonstrator for automotive use that will help demonstrate that GaN is now superior to SiC or Silicon. This is funded by the UK's Advanced Propulsion Centre (APC) and is designed to help accelerate early-stage technologies to market that will support the shift to net-zero automotive. The other company in the APC Project is RAM Innovations Ltd. This demonstrator features high frequency switching up to 1MHz to enable dramatic savings in waste, weight and power costs in the drive system. Key to this is QPT's pure sign wave output that reduces harshness, noise, and vibration to improve reliability and reduce power consumption. The traction inverter market for EVs was estimated at $17.93bn in 2023 and is projected to reach around $73.08bn by 2032, a CAGR of 16.90% according to Precedence Research. Currently half of the world's electricity is used by electric motors: QPT's technology could reduce their electricity use by 10% which would be a significant reduction in CO<sub>2</sub> production.	08.10.2024 12:00:00	Oct	news_2024-10-15_7.jpg	\images\news_2024-10-15_7.jpg	https://www.q-p-t.com/press-releases/qpt-wins-grant-for-apc-project-to-develop-for-high-frequency-gan-inverter-demonstrator-for-automotive	q-p-t.com
Finalists are Selected for PSMA's Inaugural Global Energy Efficiency Award	PSMA announces the selection of finalists under co...	12137	Industry News	Finalists are Selected for PSMA's Inaugural Global Energy Efficiency Award	PSMA announces the selection of finalists under consideration for its prestigious "Global Energy Efficiency Award." The award will be presented to the winner during next year's Applied Power Electronics Conference (APEC) in Atlanta, March 16-20, 2025, as part of PSMA's 40<sup>th</sup> anniversary celebration. The award highlights PSMA's long-standing tradition of supporting companies making critical energy efficiency improvements to reduce global climate change. Three "Global Energy Efficiency Award" finalists were announced on Energy Efficiency Day, Oct. 2<sup>nd</sup>. Beyond energy conservation, the judging panel evaluated the finalists based on their total potential impact on the power electronics industry, whether through volume shipments or by social outcomes.	08.10.2024 12:00:00	Oct	news_2024-10-15_8.png	\images\news_2024-10-15_8.png	https://www.psma.com/	psma.com
Silicon Capacitor Production Line opened in France	Murata Manufacturing has opened production line fo...	12132	Industry News	Silicon Capacitor Production Line opened in France	Murata Manufacturing has opened production line for silicon capacitors at its site in Caen, France. Manufactured on a 200-mm mass production line the silicon capacitors can be used in demanding applications such as implantable medical systems, telecommunication infrastructures, and mobile phones. The products produced in the 200-mm line will primarily target the mobile handset market by delivering capacitors in extremely compact sizes, with thicknesses as low as 50 µm.	04.10.2024 08:00:00	Oct	news_2024-10-15_3.jpg	\images\news_2024-10-15_3.jpg	https://corporate.murata.com/en-eu/newsroom/news/company/general/2024/1011	murata.com
Shaping the Future of Heat Control Solutions	Thermal Management Expo Europe is taking place in ...	12130	Event News	Shaping the Future of Heat Control Solutions	Thermal Management Expo Europe is taking place in Stuttgart, Germany, from 3-5 December 2024. This is a unique opportunity to explore cutting-edge thermal management technologies, materials, and solutions critical to today's fast-evolving industries, from automotive and electronics to energy and aerospace. This year's expo will feature innovative products and solutions for heat dissipation, cooling, and temperature regulation, as well as live demonstrations of breakthrough thermal technologies. Network with industry leaders at the receptions and attend the free conference where technical experts will tackle the latest advancements in thermal management materials and strategies. Find out more and register for your free pass at	01.10.2024 06:00:00	Oct	news_2024-10-15_1.jpg	\images\news_2024-10-15_1.jpg	https://www.thermalmanagementexpo-europe.com/?utm_source=bodos_power_systems&utm_campaign=TEE24_Partners	thermalmanagementexpo-europe.com
AC Programmable Power	TDK introduced the TDK-Lambda brand GENESYS™...	12202	Product Release	AC Programmable Power	TDK introduced the TDK-Lambda brand GENESYS™ AC (GAC) and GENESYS AC PRO (GAC-PRO) series of 2 kVA and 3 kVA rated programmable AC power sources. With a 1U chassis height, the GAC and GAC-PRO offer a higher level of DC functionality than other members of this family – with the ability to allow AC, DC, or combined AC+DC operation. The models allow full-rated power and current in DC modes as well as functions such as waveform generation and harmonics analysis as standard. The PRO model also includes real-time analog control functionality necessary for more complex test scenarios, such as hardware in the loop (HiL). Other applications include automated test equipment, avionics airborne equipment, aircraft electrical power, defence (RTCA, Boeing, Airbus Standards), automotive, e-mobility, and power source testing. The company’s parallel system provides characteristics comparable with that of a single power supply. 2kVA and 3 kVA units may be user-combined for additional power and to provide multiple phase outputs. The front panel controls can be made through the use of a capacitive touch display, providing increased robustness over mechanical switches. Multiple languages are catered for, including, Chinese, English, French, German, Japanese, Korean, and Spanish. As standard, LAN, USB, RS232, RS485, and Analog Programming/Monitoring are provided, with optional IEEE/GPIB. The included remote GUI software allows the user full control, sequence programming, plus the option to use pre-programmed test standards for common IEC, aerospace, and marine tests. The devices are safety-certified to IEC/EN/UL 61010-1 and comply with IEC/EN 61204-3.	30.09.2024 15:30:00	Sep	news_2024-12-01_17.jpg	\images\news_2024-12-01_17.jpg	https://www.emea.lambda.tdk.com/uk/news/article/20445	lambda.tdk.com
Current Sensors for Use in DAQ Systems with integrated Burdon Transistor	Available from Danisense is a range of current tra...	12141	Product Release	Current Sensors for Use in DAQ Systems with integrated Burdon Transistor	Available from Danisense is a range of current transducers with voltage output, designed to streamline the workflow for engineers utilizing data acquisition (DAQ) systems. These devices integrate the burden resistor directly into the current transducer, mitigating the risk of miscalculations. The DS, DM and DL series current transducers with voltage output from Danisense offer users options for precise measurements of AC and DC currents from 55 A up to 3000 A. The products are well-suited for a wide range of applications, particularly in harsh environments and high-temperature settings such as e-mobility, solar, and wind energy sectors. They offer a 1 V or 10 V BNC voltage output connection, an aperture of up to 68 mm) and very low linearity errors. All products are housed in full aluminum casings and incorporate the Fluxgate technology. For data acquisition users usually employ a variety of instruments, extending beyond traditional oscilloscopes. These instruments often lack a direct current sensor. Consequently, when users require a precision current sensor, they must also use a burden resistor to facilitate the connection. However, this often poses a significant challenge: users need to align the specifications of the current sensor with those of the burden resistor. The complexity of these specifications leaves considerable room for error.	30.09.2024 09:30:00	Sep	news_2024-10-15_12.jpg	\images\news_2024-10-15_12.jpg	https://danisense.com/	danisense.com
Power Semiconductors now supplied from 12-inch Wafers	Mitsubishi Electric Corporation announced that its...	12131	Industry News	Power Semiconductors now supplied from 12-inch Wafers	Mitsubishi Electric Corporation announced that its Power Device Works' Fukuyama Factory has begun large-scale supply of power semiconductor chips made from 12-inch silicon wafers for the assembly of semiconductor modules. The Si power semiconductor modules will initially be used in consumer products. Going forward, Mitsubishi Electric expects to contribute to green transformation by providing a stable and timely supply of semiconductor chips to meet the growing demand for energy-saving power electronics devices in various applications. The Fukuyama Factory is playing a key role in Mitsubishi Electric's medium-term plan to double its wafer processing capacity for Si power semiconductors by fiscal year 2026 compared to five years earlier. The factory operates on a total floor area of approximately 46,500m² on three floors.	30.09.2024 07:00:00	Sep	news_2024-10-15_2.jpg	\images\news_2024-10-15_2.jpg	https://www.mitsubishielectric.com/news/2024/0930.html?cid=rss	mitsubishielectric.com
Current-compensated Chokes for Vertical PCB Mounting	Schurter is launching a vertically mountable choke...	12147	Product Release	Current-compensated Chokes for Vertical PCB Mounting	Schurter is launching a vertically mountable choke family for PCBs with nanocrystalline cores and "very high inductances". Due to the compact dimensions, the integration of the filter elements on printed circuit boards is an ideal solution. The DKCV-1 choke series is particularly suitable for applications that require high attenuation. Due to the vertical choke arrangement, they also require little space on the PCB. All variants of the DKCV-1 family have the same footprint on the PCB. The chokes are suited for applications like switching power supplies, industrial, medical, laboratory and test equipment. The chokes are designed for currents up to 10 A and voltages up to 300 V<sub>AC</sub> or 450 V<sub>DC</sub> and have ENEC, cUR and UR approvals. For higher power applications, the DKIV-1 series of chokes is available with rated currents up to 50 A.	27.09.2024 15:30:00	Sep	news_2024-10-15_18.jpg	\images\news_2024-10-15_18.jpg	https://www.schurter.com/en/datasheet/DKCV-1	schurter.com
MLCCs with Voltage Rating up to 2000 V	Samsung Electro-Mechanics is releasing a range of ...	12142	Product Release	MLCCs with Voltage Rating up to 2000 V	Samsung Electro-Mechanics is releasing a range of MLCCs (multi-layer ceramic capacitors) that meet growing demand for high rated voltage solutions within the electric vehicle industry. These 1812 inch (4.5 mm x 3.2 mm) X7R MLCCs are availble with capacitances in the range of 2.2 nF to 470 nF with a voltage rating up to 2000 V<sub>DC</sub>. These MLCCs comply with AEC-Q200, the global standard for stress resistance that all passive electronic components must meet for use within the automotive industry. Suitable for use in operating temperatures up to 125 °C, all of the new MLCCs from Samsung Electro-Mechanics offer RoHS and REACH compliance.	26.09.2024 10:30:00	Sep	news_2024-10-15_13.jpg	\images\news_2024-10-15_13.jpg	https://www.samsungsem.com/global/product/passive-component/mlcc.do	samsungsem.com
DC EMC Filter for High Power EV Charging Applications	EMIS announces the availability of the MF620 DC EM...	12139	Product Release	DC EMC Filter for High Power EV Charging Applications	EMIS announces the availability of the MF620 DC EMI Filter range specially designed for high power electric vehicle charging applications. The DC EMI filters suppress undesirable electrical disturbances in power lines, specifically for EV DC fast charging. The MF620 filter range addressing both common mode and differential mode interference meets the safety requirements of IEC/EN 61851-23 Electric Vehicle Conductive Charging System and UL 2202 Electric Vehicle Charging System Equipment. This high current dual-stage DC EMI/EMC filter series is intended to operate up to 1600 V<sub>DC</sub> at current ratings of 150 A to 1600 A with the option to select the parallel capacitors. Designed with specific capacitance and inductance values to target unwanted frequencies and in addition to EV Charging the filters may be used for Industrial Automation, Renewable Energy Systems, Telecommunication Equipment and Power Supplies.	26.09.2024 07:30:00	Sep	news_2024-10-15_10.jpg	\images\news_2024-10-15_10.jpg	https://emisglobal.com/products/emi-filters/dc-filter/mf-620/	emisglobal.com
Ideal Diode Protection Switch with LPS for USB-C Applications	Alpha and Omega Semiconductor released its AOZ1390...	12143	Product Release	Ideal Diode Protection Switch with LPS for USB-C Applications	Alpha and Omega Semiconductor released its AOZ1390DI-01 and AOZ1390DI-02 ideal diode protection switches. The devices are well-suited for multi-port Type-C PD 3.0 current sinking applications up to 100 W, such as high-performance laptops, personal computers, monitors, docking, and other Type-C port applications. Designed to enhance USB Type-C efficiency and safety, the AOZ1390DI features Limited Power Source (LPS) functionality. For multi-port ORing or parallel power applications, the LPSB pin of the AOZ1390DI can be connected to the DISB pin of one or more AOZ1390DI devices at other ports. This LPS feature works as a watchdog, disabling the port when another port in the same system is faulty or damaged. In doing so it prevents excessive power flow through the device from other faulty or damaged ports, making the AOZ1390 suitable for multi-port Type-C Power Delivery (PD) applications. The integrated back-to-back MOSFET is claimed to deliver "the industry's lowest ON resistance (18 mΩ typical) and highest SOA to safely handle high currents and a wide range of output capacitances on V<sub>OUT</sub>". The input operating voltage range of the AOZ1390DI is between 3.3 V and 23 V, and both V<sub>IN</sub> and V<sub>OUT</sub> terminals are rated at 30 V absolute maximum with the capability to support up to 8 A switch current.	25.09.2024 11:30:00	Sep	news_2024-10-15_14.jpg	\images\news_2024-10-15_14.jpg	https://www.aosmd.com/news/aos-introduces-ideal-diode-protection-switch-limited-power-source-lps-feature-safeguard	aosmd.com
1200 V SiC Schottky Barrier Diodes	Toshiba expanded its silicon carbide diode portfol...	12123	Product Release	1200 V SiC Schottky Barrier Diodes	Toshiba expanded its silicon carbide diode portfolio with ten 1200 V Schottky barrier diodes (SBDs). The TRSxxx120Hx series, comprising five products housed in TO-247-2L packages and five in TO-247 packages, helps designers improve the efficiency of industrial equipment, including photovoltaic (PV) inverters, electric vehicle (EV) charging stations, and switching power supplies. By implementing an enhanced junction barrier Schottky (JBS) structure, the TRSxxx120Hx series allows a forward voltage (V<sub>F</sub>) of 1.27 V (typ). The merged PiN-Schottky incorporated into a JBS structure reduces diode losses under high current conditions. The TRS40N120H of the new series accepts a forward DC current (I<sub>F(DC)</sub>) of 40 A (max) and a maximum non-repetitive peak forward surge current (I<sub>FSM</sub>) of 270 A, with the maximum case temperature (T<sub>C</sub>) of all devices being +175 °C. Combined with the lower capacitive charge and leakage current, the products help improve system efficiency and simplify thermal design. For instance, at a reverse voltage (V<sub>R</sub>) of 1200 V, the TRS20H120H diode housed in the TO-247-2L package provides a total capacitive charge (Q<sub>C</sub>) of 109 nC and reverse current (I<sub>R</sub>) of 2 µA.	25.09.2024 09:30:00	Sep	news_2024-10-01_14.jpg	\images\news_2024-10-01_14.jpg	https://toshiba.semicon-storage.com/ap-en/semiconductor/product/diodes/sic-schottky-barrier-diodes/articles/3rd-generation-sic-schottky-barrier-diode.html	toshiba.semicon-storage.com
Meeting future Energy Demands	TTI IP&E – Europe is supplying Mean Well power com...	12117	Industry News	Meeting future Energy Demands	TTI IP&E – Europe is supplying Mean Well power components, including the very latest DHP-1UT-B(HV) mounting rack power shelf, to support electronics engineers designing and building the next generation of renewable and hydrogen energy systems. "EU Environmental regulations require 45% of Europe's energy generation to come from renewable sources by 2030," says Markus Lorenz, Director Industry Marketing, Industrial, TTI Europe. "To achieve this, green energy generated from wind turbines and solar panels must be stored efficiently. Hydrogen is also expected to play a major part in the transition towards a more sustainable future as using hydrogen power is the most efficient way to transport and store energy with higher density and over a longer time frame without losses." The Mean Well DHP-1UT-B(HV) mounting rack power shelf for standard 19" cabinets enables a reliable power supply in a modular design and is ideal for applications including electrolysis, distributed power architecture and EV charging stations.	24.09.2024 13:00:00	Sep	news_2024-10-01_8.jpg	\images\news_2024-10-01_8.jpg	https://www.ttieurope.com/content/ttieurope/en/about-tti/news-center/corporate-news/press-releases/2024/september/pr-09242024-tti-europe-stock-means-power-shelf-will-support-future-energy-demands.html	ttieurope.com
4th Generation of SiC MOSFETs for up to 1200 V	STMicroelectronics has introduced its fourth gener...	12124	Product Release	4th Generation of SiC MOSFETs for up to 1200 V	STMicroelectronics has introduced its fourth generation STPOWER silicon carbide MOSFET technology. While serving the needs of both the automotive and industrial markets, the technology is particularly optimized for traction inverters. These SiC MOSFET devices, which will be made available in 750 V and 1200 V classes, are said to "improve energy efficiency and performance of both 400 V and 800 V EV bus traction inverters, bringing the advantages of SiC to mid-size and compact EVs". The new generation SiC technology is also suitable for a variety of high-power industrial applications, including solar inverters, energy storage solutions and datacenters, significantly improving energy efficiency for these growing applications. Qualification of the 750 V class of the fourth generation SiC technology platform is already completed, and ST expects to complete qualification of the 1200 V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750 V and 1200 V will follow, allowing designers to address applications operating from standard AC-line voltages up to high-voltage EV batteries and chargers. The average die size of Generation 4 devices is 12-15% smaller than that of Generation 3, considering an R<sub>DS(on)</sub> at 25 °C.	24.09.2024 10:30:00	Sep	news_2024-10-01_15.jpg	\images\news_2024-10-01_15.jpg	https://www.st.com/en/power-transistors/stpower-sic-mosfets.html	st.com
Module Provider supports local Sports Team	Vincotech has extended its fruitful cooperation wi...	12112	Industry News	Module Provider supports local Sports Team	Vincotech has extended its fruitful cooperation with TSV Haching München into the upcoming season. The company has been a main sponsor and an active supporter of the club for two years now. Vincotech's backing for the local volleyball team echoes the company's philosophy. Committed to nurturing its ties to the community and championing the spirit of partnership at work and at play, Vincotech company sees its values reflected in this sport and in the aspirations of TSV Haching München's team of young international athletes.	24.09.2024 08:00:00	Sep	news_2024-10-01_3.jpg	\images\news_2024-10-01_3.jpg	https://www.vincotech.com/news/company-news/article/vincotech-sponsors-tsv-haching-for-the-third-year-running.html	vincotech.com
Research: Isolating Piezoelectric DC/DC Converters Without Transformers	Building on its earlier breakthroughs introducing ...	12111	Industry News	Research: Isolating Piezoelectric DC/DC Converters Without Transformers	Building on its earlier breakthroughs introducing a new way of converting electrical power using piezoelectric resonators and developing a dual-bridge piezoelectric resonator converter, the technology research institute CEA-Leti has paved the way to isolating piezoelectric converters without transformers. The topology of dual-bridge isolated piezoelectric resonator converter (DB-IPRC) provides isolation using two independent piezoelectric resonators. The improved version of the DC/DC converter significantly improves efficiency, while maintaining the converter isolation principle. The results were reported in a paper, noting that "for a 200 V to 120 V conversion, the converter shows an efficiency of 96.2% with the inductive assisting circuit, 94.3% with the piezoelectric one and 87.4% without any assisting circuit. The (piezoelectric resonator) assisting circuit offers a gain in efficiency over a smaller operating range than the inductance, but leads to a flatter converter." According to CEA-Leti the use of piezoelectric resonators instead of inductors in power conversion "will lead to a dramatic reduction in the size of power converters." The research facility claims that the "results make it possible to extend this type of compact conversion to isolated converters." So this type of converter is said to be now compatible with a much wider range of applications, such as TVs, phones, tablets and electrical tools. The technology research institute says that in power conversion, piezoelectrics operate at high frequencies, greater than 100 kHz, "with no limits in terms of input power" enabling it to reach power levels of several hundred watts. The range of applications is therefore expected to be very broad, with most converters having a rated power of less than 100 W.	24.09.2024 07:00:00	Sep	news_2024-10-01_2.jpg	\images\news_2024-10-01_2.jpg	https://www.cea.fr/english	cea.fr
Medical Power Supplies meet CF Requirements	Advanced Energy has developed the NCF150 series of...	12127	Product Release	Medical Power Supplies meet CF Requirements	Advanced Energy has developed the NCF150 series of high-isolation, low-leakage current AC/DC power supplies that enable medical equipment designers to meet the cardiac floating (CF) requirements of the IEC 60601-1 medical safety standard using off-the-shelf products. Type CF is the most stringent medical electrical safety classification and is essential for medical products that may come in direct contact with the heart, including dialysis machines, cardiac-related systems and platforms for electrosurgery. The SL NCF150 series delivers a maximum output power of up to 150 W and offers voltages of 12 V, 15 V, 19 V, 24 V and 48 V. An optional 5 V standby and 12 V fan output are also available. All units in the SL NCF150 series have a patient leakage current below 10 µA, feature EMI Class B, 2 MOPP isolation and 5 kV defibrillator pulse withstand capabilities. SL NCF150 power supplies accept a universal input of 85 to 264 V<sub>AC</sub>, operate with a full-load efficiency greater than 90% and feature protection against overvoltage, overload, overtemperature and short-circuit conditions as standard. This is the first release of the CF rated family and will be followed by higher power models launching soon.	23.09.2024 13:30:00	Sep	news_2024-10-01_18.jpg	\images\news_2024-10-01_18.jpg	https://www.advancedenergy.com/en-us/products/ac-dc-power-supply-units/open-frame-low-power-psus/cf-rated-products/ncf150/	advancedenergy.com
Working together for Biodiversity with Electronics and AI	"How can we counteract the decline in biodiversity...	12133	Industry News	Working together for Biodiversity with Electronics and AI	"How can we counteract the decline in biodiversity?" This question was discussed extensively at DLD Nature, which took place in September in Munich, Germany. At the conference and for the first time, Würth Elektronik presented in the tech talk with new cooperation partner, Hula Earth, a deep-tech start-up that specializes in the real-time monitoring of biodiversity. Their presentation was titled "Electronics for Innovation in Nature Protection." For real-time measurement, Hula Earth uses solar-powered BioT sensors that continuously collect various biodiversity-relevant data and transmit it via a wireless network. This also works in remote forest areas. The results are combined with satellite data, analyzed using artificial intelligence, and integrated into a user-friendly platform. Würth Elektronik and Hula Earth are now working together to optimize the handmade prototypes of the BioT sensors so that they can be produced efficiently in large quantities. Würth Elektronik is supporting the startup in a variety of ways including support in terms of EMC safety, energy management, functionality, scalability, and energy efficiency as well as prototyping and testing. Additionally, Würth Elektronik provides design-in support, including for circuit board design, interface planning, and the communication software.	20.09.2024 09:00:00	Sep	news_2024-10-15_4.jpg	\images\news_2024-10-15_4.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=DLD-nature-2024	we-online.com
Hall-Effect Dual Latch Sensor	Melexis adds the MLX92253 to its Hall-effect dual ...	12146	Product Release	Hall-Effect Dual Latch Sensor	Melexis adds the MLX92253 to its Hall-effect dual latch portfolio. This sensor offers two independent signal tracks for minimal jitter as well as consistent 90° phase shift regardless of magnet pole pitch. This enables accurate speed & direction ECU calculation as well as direct transfer across multiple platforms. It is suited for DC motors and encoders used in a wide range of embedded applications, including automotive, alternative mobility, consumer and industrial. The MLX92253 distinguishes itself by featuring two hall plates, one Z axis and one X axis, with two independent signal tracks. It also has a common magnetic center, which ensures a consistent 90° phase shift (quadrature) between the two speed outputs, independent of the magnet pole pitch. It features a chopping frequency of 500 kHz, an operating voltage range from 2.7 V to 5.5 V, a working temperature of -40 °C to 150 °C and an output state feedback during start-up, which can be utilized to convert the two outputs into inputs during start-up. This allows a microcontroller to retrieve the previous state of the MLX92253 before power-down, ensuring that no movement is missed. The device is available in a TSOT23 package and on request as engineering samples in a VA package.	19.09.2024 14:30:00	Sep	news_2024-10-15_17.jpg	\images\news_2024-10-15_17.jpg	https://www.melexis.com/en/product/MLX92253/4-wire-3D-Triaxis-dual-latch-switch-low-voltage	melexis.com
Research: Lithium-Metal Battery with Solid Electrolyte achieves 1070 Wh/L	As the coordinator of the H2020 SOLiDIFY consortiu...	12116	Industry News	Research: Lithium-Metal Battery with Solid Electrolyte achieves 1070 Wh/L	As the coordinator of the H2020 SOLiDIFY consortium, imec, together with 13 European partners, announces the development of a high-performance lithium-metal solid-state battery. The prototype battery pouch cell, manufactured by imec in the battery assembly lab at EnergyVille, Belgium, features a unique "liquid-to-solid" processed solid electrolyte, jointly developed by imec and the partners. It boasts an energy density of 1070 Wh/L, compared to 800 Wh/L for state-of-the art lithium-ion batteries. The manufacturing process, which is said to be cost less than €150 per kWh while being adaptable to existing lithium-ion battery production lines, paves the way for commercially viable solid lithium batteries for electromobility. The high energy density was achieved by combining a high-capacity composite cathode, separated from a thin lithium metal anode by a thin solid electrolyte separator (50 µm), which resulted in a compact battery cell stack. In addition, the consortium overcame mechanical strength and cathode impregnation challenges to increase the cell's charge rate to 3 hours and lifetime to 100 cycles. Compared to liquid electrolytes, the thermally stable solid cell had a reduced flammability, improving safety. The application of nanometer-thin protective coatings enabled the use of cobalt-lean NMC cathodes, reducing environmental impact while providing higher capacity. Next steps include further upscaling of this high-performance battery technology.	19.09.2024 12:00:00	Sep	news_2024-10-01_7.jpg	\images\news_2024-10-01_7.jpg	https://solidify-h2020.eu/	solidify-h2020.eu
N-Channel MOSFETs for 40 – 100 V	ROHM has released N-channel MOSFETs – RF9x120BKFRA...	12125	Product Release	N-Channel MOSFETs for 40 – 100 V	ROHM has released N-channel MOSFETs – RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB – featuring ON-resistances that are suited for several automotive applications, including motors for doors and seat positioning, as well as LED headlights. Offered in voltage ratings of 40 V, 60 V, and 100 V, the new products incorporate a split-gate structure to achieve low ON-resistance. All models are qualified under the AEC-Q101 automotive reliability standard. Design engineers can select from among three package types, depending on the application. For space-constrained sets like ADAS, the compact DFN2020Y7LSAA (2.0 mm × 2.0 mm) and HSMT8AG (3.3 mm × 3.3 mm) packages fit well. For automotive power applications, the widely used TO-252 (DPAK) package (6.6 mm × 10.0 mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package. P-channel products are also scheduled for future release.	19.09.2024 11:30:00	Sep	news_2024-10-01_16.jpg	\images\news_2024-10-01_16.jpg	https://www.rohm.com/news-detail?news-title=2024-09-19_news_mosfet&defaultGroupId=false	rohm.com
Design and Service Center in the Greater Boston Area	Advanced Energy has opened a design and service ce...	12114	Industry News	Design and Service Center in the Greater Boston Area	Advanced Energy has opened a design and service center in Wilmington, MA. The facility will focus on the development of advanced power technologies for semiconductor, industrial and medical applications. Combining laboratory and office space, the center will be the workspace for up to 50 employees. It supports AE's rapid growth strategy by enabling the launch of leading technology platforms, reducing time-to-market for new products, and ensuring smooth transitions to high-volume manufacturing. The design and service center features labs as well as office space with a gym and cafeteria. It is located near top schools like MIT and Northeastern.	19.09.2024 10:00:00	Sep	news_2024-10-01_5.jpg	\images\news_2024-10-01_5.jpg	https://ir.advancedenergy.com/news/advanced-energy-opens-design-and-service-center-in-the-greater-boston-area/bfab5c16-eaad-45be-998e-7e947578dda9/	advancedenergy.com
Insights into Design Challenges of Motor Control	Mouser Electronics announces an eBook offering a d...	12134	Industry News	Insights into Design Challenges of Motor Control	Mouser Electronics announces an eBook offering a deep dive into motor control, and with the push to achieve a more sustainable future, the challenge is to maximize efficiency while striking a balance with costs. In the eBook dubbed "Mastering Motor Control Design" Mouser offers electrical design engineers of all levels of experience practical information on system parameters and product selection. Topics include selecting the correct type of motor for the application, driver and microcontroller options, motor power components, motor isolation and current sensing, and more. The eBook also includes convenient links to select motor control products.	19.09.2024 10:00:00	Sep	news_2024-10-15_5.jpg	\images\news_2024-10-15_5.jpg	https://resources.mouser.com/explore-all/mastering-motor-control-design-guide	mouser.com
US Funding for WBG Power Projects	The White House and U.S. Department of Defense ann...	12110	Industry News	US Funding for WBG Power Projects	The White House and U.S. Department of Defense announced the first year of funding, totaling $19 million, for four additional projects for the Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Microelectronics Commons Hub, headed by North Carolina State University. The first of the four selected projects is "High Permittivity Dielectrics to Increase the Performance of III-Nitride Transistors" and led by NC State. It will increase the efficiency and radiation hardness of advanced transistors used in avionics and satellite applications. Partners include MACOM, EPC Space, Lockheed Martin, University of Florida, NASA and Sandia National Laboratories. The second project is named "Transition Readiness for NITride Rf Overmatch (T/R NITRO)" and led by MACOM. It will deliver advance prototypes of high frequency transistors and circuits for use in electronic warfare, radars, and 5G/6G telecommunications. The partners include NC State, Adroit Materials and the Naval Research Laboratory. The third project is about "Advanced High Voltage Silicon Carbide Switches". Led by GE Aerospace it will push the development of 6.5 to 10 kV planar field-effect transistors (FETs) into a low-volume production environment and develop 6.5 to 10 kV Superjunction (SJ) devices. The partners include Coherent, NC State, Stony Brook University, University at Albany, Naval Research Laboratory, DEVCOM and N.C. A&T State University. The fourth project covers "Advanced Power Switches Using UWBG Gallium Oxide". Led by Kyma Technologies it will advance the state-of-the-art in gallium oxide high voltage switching devices by producing power diodes and power transistors capable of blocking up to 10 kV, and make available the epilayers, devices, and composite substrates to the DoD and community at large through the CLAWS hub. The partners include NC State, University of California at Santa Barbara, Modern Microsystems, the Air Force Research Laboratory, Naval Research Laboratory and GE Aerospace.	19.09.2024 06:00:00	Sep	news_2024-10-01_1.jpg	\images\news_2024-10-01_1.jpg	https://news.ncsu.edu/2024/09/claws-hub-to-lead-leap-ahead-projects/	ncsu.edu
Strategic Alliance regarding Semiconductor Ecosystem in India	Tata Group and Analog Devices announced a strategi...	12119	Industry News	Strategic Alliance regarding Semiconductor Ecosystem in India	Tata Group and Analog Devices announced a strategic alliance to explore potential cooperative manufacturing opportunities. Tata Electronics, Tata Motors, and Tejas Networks signed a Memorandum of Understanding (MoU) with ADI to enhance strategic and business cooperation, explore opportunities for semiconductor manufacturing in India, and use ADI's products in Tata applications like electric vehicles and network infrastructure. The companies also agree to have strategic roadmap alignment discussions. As previously announced, Tata Electronics is investing in its own facilities by building India's first fab in Dholera, Gujarat with a total investment of $11 billion. In addition, Tata Electronics will be investing another $3 billion in a greenfield facility in Jagiroad, Assam for the assembly and testing of semiconductor chips. Tata Electronics and ADI intend to explore opportunities to manufacture ADI's products in Tata Electronics' fab in Gujarat and OSAT in Assam. Tata Motors and ADI intend to explore opportunities for engagement in electronics hardware components for energy storage solutions and power electronics in both commercial and passenger vehicle businesses. Tejas Networks and ADI intend to explore opportunities for engagement in electronics hardware components for network infrastructure.	18.09.2024 15:00:00	Sep	news_2024-10-01_10.jpg	\images\news_2024-10-01_10.jpg	https://www.analog.com/en/newsroom/press-releases/2024/9-18-2024-tata-adi-announce-strategic-alliance-explore-joint-opportunities.html	analog.com
Office in the heart of Southeast Asia	In August Würth Elektronik eiSos opened its first ...	12113	Industry News	Office in the heart of Southeast Asia	In August Würth Elektronik eiSos opened its first Thai branch office - in the Rama 9 business center in Bangkok. The company says that this gives the up-and-coming Asian business a secure base and new impetus for growth. Würth Elektronik eiSos points out that the location in the heart of the vibrant business district has excellent public transport connections. Würth Elektronik's corporate history in Thailand began back in 2006 - with the support of the Würth Elektronik eiSos team in Singapore. The first Field Sales Engineer was then hired in September 2010. The Thailand business developed extremely positively. Under the leadership of Regional Sales Manager Chantwut Zukzwang, General Manager Sebastian Tan and thirteen employees are now driving Würth Elektronik's Thailand business forward. The new location can already rely on a stable sales base that also includes major EMS customers.	18.09.2024 09:00:00	Sep	news_2024-10-01_4.jpg	\images\news_2024-10-01_4.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=thailand-opening	we-online.com
Silicon Valley Design and Innovation Centre	XP Power has opened the Silicon Valley Innovation ...	12118	Industry News	Silicon Valley Design and Innovation Centre	XP Power has opened the Silicon Valley Innovation Centre (SVIC) as its new North America Headquarters in San Jose, CA. This 85,000-square-foot facility integrates research and technology development, design engineering, pilot manufacturing, warehousing logistics, and service/support under one roof. The Innovation Centre facilitates rapid development cycles, allowing the company to deliver solutions efficiently - supported by a multi-disciplined Engineering Team with design and industry experience across semiconductor, healthcare, military, and industrial sectors. The facility includes a Reliability Lab with multiple Highly Accelerated Life Test (HALT), Highly Accelerated Stress Screen (HASS) and Environmental Chambers. An etch Plasma Chamber focuses on system validation for semiconductor fabrication equipment, and a 3-meter Anechoic EMC Chamber complements existing EMC compliance test stations to accelerate time-to-market. A dedicated Test Development Team is in place to design custom test equipment for specialized power conversion applications. The SVIC also incorporates eco-friendly features such as electric vehicle charging stations, automated LED lighting and HVAC systems, dishwashers to discourage single-use dishes, and the elimination of all Single-Use Plastics (SUP).	17.09.2024 14:00:00	Sep	news_2024-10-01_9.jpg	\images\news_2024-10-01_9.jpg	https://www.xppower.com/resources/press-releases/xp-power-unveils-silicon-valley-design-and-innovation-center	xppower.com
Micro DC/DC Stepup Converter operate from 0.9 V	Torex Semiconductor has launched its XCL109/XCL110...	12129	Product Release	Micro DC/DC Stepup Converter operate from 0.9 V	Torex Semiconductor has launched its XCL109/XCL110 series of inductor built-in step-up DC/DC converters. The XCL109/XCL110 series incorporates both the IC and coil into a package measuring 2.0 x 2.5 x h1.04 mm<sup>3</sup>. It is a step-up DC/DC converter that requires small input and output capacitors as peripheral components. The converter can start operation with an input voltage as low as 0.9 V, making it suitable for devices powered by a single alkaline or nickel-metal hydride battery. The output voltage is adjustable in 0.1 V increments within the range of 1.8 V to 5.5 V, and it operates at ambient temperatures of up to 105 °C. This product is available in three types to suit various applications: The "load disconnect type" cuts off the connection between input and output during standby, minimizing battery consumption, while the "bypass type" maintains the connection between input and output during MCU sleep mode, supplying the battery voltage directly. It boosts the voltage to 3.3 V or other levels only during active mode, thereby reducing power consumption during sleep and contributing to overall low power consumption of the device. The "output OR type" is ideal for output OR connections in configurations with multiple power lines or backup systems. The XCL109/XCL110 series are designed for industrial equipment, IoT, mobile devices, wearables, healthcare, and any other devices that demand compact size, low power consumption, and high functionality/performance while prioritizing battery life. The device is integrated into a CL-2025-02 package, which is pin-compatible with other inductor built-in step-up DC/DC products.	12.09.2024 15:30:00	Sep	news_2024-10-01_20.jpg	\images\news_2024-10-01_20.jpg	https://www.torexsemi.com/news/product/20240912_4499	torexsemi.com