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Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

125 V High-Side Gate Driver: Protection by Disconnecting

Learn more:
infineon.com

Product Release
2024-10-10

In battery-powered applications such as motor drives and SMPS, the power supply architecture often requires that a module can be disconnected from the main supply rail when a fault occurs in that module. High-side disconnect switches (e. g. MOSFETs) can prevent a load short circuit from affecting the battery. Infineon Technologies has now introduced the EiceDRIVER™ 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault. The device is said to "provide fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities". The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package and includes overcurrent protection, adjustable current setting threshold, time delay and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions. The 1EDL8011 has a operating voltage range of 8 V to 125 V and a gate sinking current of up to 1 A, while the off-mode quiescent current is 1 µA.

BMS Solutions based on 100 V Bi-directional GaN Technology

Learn more:
innoscience.com

Product Release
2024-10-10

Innoscience Technology has launched another generation of battery management system (BMS) solutions based on VGaN™ technology. With no parasitic body diode and bidirectional control, one single bi-directional (VGaN) device from Innoscience is claimed to be able to "effectively replace two traditional MOS Silicon pairs". The VGaN series brings these features to Over Voltage Protection (OVP) and BMS applications. A 48 V/180 A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design adopts the company's latest 100 V VGaN product, the INV100FQ030A, which is packaged in a 4 mm x 6 mm² FCQFN and offers a maximum on-resistance of 3.2 mΩ. No heat sink is required with a maximum temperature rise of less than 50°C. The 16-string charging and discharging battery protection system uses the controllable bidirectional conduction and cut-off features of VGaN, enabling four operational states: normal charging and discharging, charging protection, discharging protection, and sleep mode. With 16 VGaNs it is said to be possible to replace 18 pairs of Silicon MOSFETs (36 in total). This 48 V/18 0A high-side BMS solution is suited for home batteries, portable charging station, e-scooters, e-bikes etc., optimizing battery life and safety through efficient charge and discharge control. It reduces temperature rise and system costs while ensuring a compact, portable design.

Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection

Learn more:
littelfuse.com

Product Release
2024-10-08

Littlefuse announced the SMFA Asymmetrical Series Surface-Mount TVS Diode, which is claimed to be "the first-to-market asymmetrical TVS solution specifically designed to protect Silicon Carbide MOSFET gates from overvoltage events. The SMFA Asymmetrical Series is engineered specifically for the unique gate protection requirements of SiC MOSFETs. Unlike traditional solutions that require multiple Zener or TVS diodes, the SMFA Series protects against ringing and overshoot phenomena in gate drive circuits using a single component. The devices are suited for AI and data center power supplies, EV infrastructure power system and industrial equipment power supplies.

High Frequency GaN Inverter Demonstrator for Automotive

Learn more:
q-p-t.com

Industry News
2024-10-08

QPT wins a grant for a new Project called VERDE to develop a high frequency, 400V/60kW GaN inverter demonstrator for automotive use that will help demonstrate that GaN is now superior to SiC or Silicon. This is funded by the UK's Advanced Propulsion Centre (APC) and is designed to help accelerate early-stage technologies to market that will support the shift to net-zero automotive. The other company in the APC Project is RAM Innovations Ltd. This demonstrator features high frequency switching up to 1MHz to enable dramatic savings in waste, weight and power costs in the drive system. Key to this is QPT's pure sign wave output that reduces harshness, noise, and vibration to improve reliability and reduce power consumption. The traction inverter market for EVs was estimated at $17.93bn in 2023 and is projected to reach around $73.08bn by 2032, a CAGR of 16.90% according to Precedence Research. Currently half of the world's electricity is used by electric motors: QPT's technology could reduce their electricity use by 10% which would be a significant reduction in CO₂ production.

Finalists are Selected for PSMA's Inaugural Global Energy Efficiency Award

Learn more:
psma.com

Industry News
2024-10-08

PSMA announces the selection of finalists under consideration for its prestigious "Global Energy Efficiency Award." The award will be presented to the winner during next year's Applied Power Electronics Conference (APEC) in Atlanta, March 16-20, 2025, as part of PSMA's 40^th anniversary celebration. The award highlights PSMA's long-standing tradition of supporting companies making critical energy efficiency improvements to reduce global climate change. Three "Global Energy Efficiency Award" finalists were announced on Energy Efficiency Day, Oct. 2^nd. Beyond energy conservation, the judging panel evaluated the finalists based on their total potential impact on the power electronics industry, whether through volume shipments or by social outcomes.

Silicon Capacitor Production Line opened in France

Learn more:
murata.com

Industry News
2024-10-04

Murata Manufacturing has opened production line for silicon capacitors at its site in Caen, France. Manufactured on a 200-mm mass production line the silicon capacitors can be used in demanding applications such as implantable medical systems, telecommunication infrastructures, and mobile phones. The products produced in the 200-mm line will primarily target the mobile handset market by delivering capacitors in extremely compact sizes, with thicknesses as low as 50 µm.

Shaping the Future of Heat Control Solutions

Learn more:
thermalmanagementexpo-europe.com

Event News
2024-10-01

Thermal Management Expo Europe is taking place in Stuttgart, Germany, from 3-5 December 2024. This is a unique opportunity to explore cutting-edge thermal management technologies, materials, and solutions critical to today's fast-evolving industries, from automotive and electronics to energy and aerospace. This year's expo will feature innovative products and solutions for heat dissipation, cooling, and temperature regulation, as well as live demonstrations of breakthrough thermal technologies. Network with industry leaders at the receptions and attend the free conference where technical experts will tackle the latest advancements in thermal management materials and strategies. Find out more and register for your free pass at

Current Sensors for Use in DAQ Systems with integrated Burdon Transistor

Learn more:
danisense.com

Product Release
2024-09-30

Available from Danisense is a range of current transducers with voltage output, designed to streamline the workflow for engineers utilizing data acquisition (DAQ) systems. These devices integrate the burden resistor directly into the current transducer, mitigating the risk of miscalculations. The DS, DM and DL series current transducers with voltage output from Danisense offer users options for precise measurements of AC and DC currents from 55 A up to 3000 A. The products are well-suited for a wide range of applications, particularly in harsh environments and high-temperature settings such as e-mobility, solar, and wind energy sectors. They offer a 1 V or 10 V BNC voltage output connection, an aperture of up to 68 mm) and very low linearity errors. All products are housed in full aluminum casings and incorporate the Fluxgate technology. For data acquisition users usually employ a variety of instruments, extending beyond traditional oscilloscopes. These instruments often lack a direct current sensor. Consequently, when users require a precision current sensor, they must also use a burden resistor to facilitate the connection. However, this often poses a significant challenge: users need to align the specifications of the current sensor with those of the burden resistor. The complexity of these specifications leaves considerable room for error.

Power Semiconductors now supplied from 12-inch Wafers

Learn more:
mitsubishielectric.com

Industry News
2024-09-30

Mitsubishi Electric Corporation announced that its Power Device Works' Fukuyama Factory has begun large-scale supply of power semiconductor chips made from 12-inch silicon wafers for the assembly of semiconductor modules. The Si power semiconductor modules will initially be used in consumer products. Going forward, Mitsubishi Electric expects to contribute to green transformation by providing a stable and timely supply of semiconductor chips to meet the growing demand for energy-saving power electronics devices in various applications. The Fukuyama Factory is playing a key role in Mitsubishi Electric's medium-term plan to double its wafer processing capacity for Si power semiconductors by fiscal year 2026 compared to five years earlier. The factory operates on a total floor area of approximately 46,500m² on three floors.

Current-compensated Chokes for Vertical PCB Mounting

Learn more:
schurter.com

Product Release
2024-09-27

Schurter is launching a vertically mountable choke family for PCBs with nanocrystalline cores and "very high inductances". Due to the compact dimensions, the integration of the filter elements on printed circuit boards is an ideal solution. The DKCV-1 choke series is particularly suitable for applications that require high attenuation. Due to the vertical choke arrangement, they also require little space on the PCB. All variants of the DKCV-1 family have the same footprint on the PCB. The chokes are suited for applications like switching power supplies, industrial, medical, laboratory and test equipment. The chokes are designed for currents up to 10 A and voltages up to 300 V_AC or 450 V_DC and have ENEC, cUR and UR approvals. For higher power applications, the DKIV-1 series of chokes is available with rated currents up to 50 A.

MLCCs with Voltage Rating up to 2000 V

Learn more:
samsungsem.com

Product Release
2024-09-26

Samsung Electro-Mechanics is releasing a range of MLCCs (multi-layer ceramic capacitors) that meet growing demand for high rated voltage solutions within the electric vehicle industry. These 1812 inch (4.5 mm x 3.2 mm) X7R MLCCs are availble with capacitances in the range of 2.2 nF to 470 nF with a voltage rating up to 2000 V_DC. These MLCCs comply with AEC-Q200, the global standard for stress resistance that all passive electronic components must meet for use within the automotive industry. Suitable for use in operating temperatures up to 125 °C, all of the new MLCCs from Samsung Electro-Mechanics offer RoHS and REACH compliance.

DC EMC Filter for High Power EV Charging Applications

Learn more:
emisglobal.com

Product Release
2024-09-26

EMIS announces the availability of the MF620 DC EMI Filter range specially designed for high power electric vehicle charging applications. The DC EMI filters suppress undesirable electrical disturbances in power lines, specifically for EV DC fast charging. The MF620 filter range addressing both common mode and differential mode interference meets the safety requirements of IEC/EN 61851-23 Electric Vehicle Conductive Charging System and UL 2202 Electric Vehicle Charging System Equipment. This high current dual-stage DC EMI/EMC filter series is intended to operate up to 1600 V_DC at current ratings of 150 A to 1600 A with the option to select the parallel capacitors. Designed with specific capacitance and inductance values to target unwanted frequencies and in addition to EV Charging the filters may be used for Industrial Automation, Renewable Energy Systems, Telecommunication Equipment and Power Supplies.

Ideal Diode Protection Switch with LPS for USB-C Applications

Learn more:
aosmd.com

Product Release
2024-09-25

Alpha and Omega Semiconductor released its AOZ1390DI-01 and AOZ1390DI-02 ideal diode protection switches. The devices are well-suited for multi-port Type-C PD 3.0 current sinking applications up to 100 W, such as high-performance laptops, personal computers, monitors, docking, and other Type-C port applications. Designed to enhance USB Type-C efficiency and safety, the AOZ1390DI features Limited Power Source (LPS) functionality. For multi-port ORing or parallel power applications, the LPSB pin of the AOZ1390DI can be connected to the DISB pin of one or more AOZ1390DI devices at other ports. This LPS feature works as a watchdog, disabling the port when another port in the same system is faulty or damaged. In doing so it prevents excessive power flow through the device from other faulty or damaged ports, making the AOZ1390 suitable for multi-port Type-C Power Delivery (PD) applications. The integrated back-to-back MOSFET is claimed to deliver "the industry's lowest ON resistance (18 mΩ typical) and highest SOA to safely handle high currents and a wide range of output capacitances on V_OUT". The input operating voltage range of the AOZ1390DI is between 3.3 V and 23 V, and both V_IN and V_OUT terminals are rated at 30 V absolute maximum with the capability to support up to 8 A switch current.

1200 V SiC Schottky Barrier Diodes

Learn more:
toshiba.semicon-storage.com

Product Release
2024-09-25

Toshiba expanded its silicon carbide diode portfolio with ten 1200 V Schottky barrier diodes (SBDs). The TRSxxx120Hx series, comprising five products housed in TO-247-2L packages and five in TO-247 packages, helps designers improve the efficiency of industrial equipment, including photovoltaic (PV) inverters, electric vehicle (EV) charging stations, and switching power supplies. By implementing an enhanced junction barrier Schottky (JBS) structure, the TRSxxx120Hx series allows a forward voltage (V_F) of 1.27 V (typ). The merged PiN-Schottky incorporated into a JBS structure reduces diode losses under high current conditions. The TRS40N120H of the new series accepts a forward DC current (I_F(DC)) of 40 A (max) and a maximum non-repetitive peak forward surge current (I_FSM) of 270 A, with the maximum case temperature (T_C) of all devices being +175 °C. Combined with the lower capacitive charge and leakage current, the products help improve system efficiency and simplify thermal design. For instance, at a reverse voltage (V_R) of 1200 V, the TRS20H120H diode housed in the TO-247-2L package provides a total capacitive charge (Q_C) of 109 nC and reverse current (I_R) of 2 µA.

Meeting future Energy Demands

Learn more:
ttieurope.com

Industry News
2024-09-24

TTI IP&E – Europe is supplying Mean Well power components, including the very latest DHP-1UT-B(HV) mounting rack power shelf, to support electronics engineers designing and building the next generation of renewable and hydrogen energy systems. "EU Environmental regulations require 45% of Europe's energy generation to come from renewable sources by 2030," says Markus Lorenz, Director Industry Marketing, Industrial, TTI Europe. "To achieve this, green energy generated from wind turbines and solar panels must be stored efficiently. Hydrogen is also expected to play a major part in the transition towards a more sustainable future as using hydrogen power is the most efficient way to transport and store energy with higher density and over a longer time frame without losses." The Mean Well DHP-1UT-B(HV) mounting rack power shelf for standard 19" cabinets enables a reliable power supply in a modular design and is ideal for applications including electrolysis, distributed power architecture and EV charging stations.

4th Generation of SiC MOSFETs for up to 1200 V

Learn more:
st.com

Product Release
2024-09-24

STMicroelectronics has introduced its fourth generation STPOWER silicon carbide MOSFET technology. While serving the needs of both the automotive and industrial markets, the technology is particularly optimized for traction inverters. These SiC MOSFET devices, which will be made available in 750 V and 1200 V classes, are said to "improve energy efficiency and performance of both 400 V and 800 V EV bus traction inverters, bringing the advantages of SiC to mid-size and compact EVs". The new generation SiC technology is also suitable for a variety of high-power industrial applications, including solar inverters, energy storage solutions and datacenters, significantly improving energy efficiency for these growing applications. Qualification of the 750 V class of the fourth generation SiC technology platform is already completed, and ST expects to complete qualification of the 1200 V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750 V and 1200 V will follow, allowing designers to address applications operating from standard AC-line voltages up to high-voltage EV batteries and chargers. The average die size of Generation 4 devices is 12-15% smaller than that of Generation 3, considering an R_DS(on) at 25 °C.

Module Provider supports local Sports Team

Learn more:
vincotech.com

Industry News
2024-09-24

Vincotech has extended its fruitful cooperation with TSV Haching München into the upcoming season. The company has been a main sponsor and an active supporter of the club for two years now. Vincotech's backing for the local volleyball team echoes the company's philosophy. Committed to nurturing its ties to the community and championing the spirit of partnership at work and at play, Vincotech company sees its values reflected in this sport and in the aspirations of TSV Haching München's team of young international athletes.

Research: Isolating Piezoelectric DC/DC Converters Without Transformers

Learn more:
cea.fr

Industry News
2024-09-24

Building on its earlier breakthroughs introducing a new way of converting electrical power using piezoelectric resonators and developing a dual-bridge piezoelectric resonator converter, the technology research institute CEA-Leti has paved the way to isolating piezoelectric converters without transformers. The topology of dual-bridge isolated piezoelectric resonator converter (DB-IPRC) provides isolation using two independent piezoelectric resonators. The improved version of the DC/DC converter significantly improves efficiency, while maintaining the converter isolation principle. The results were reported in a paper, noting that "for a 200 V to 120 V conversion, the converter shows an efficiency of 96.2% with the inductive assisting circuit, 94.3% with the piezoelectric one and 87.4% without any assisting circuit. The (piezoelectric resonator) assisting circuit offers a gain in efficiency over a smaller operating range than the inductance, but leads to a flatter converter." According to CEA-Leti the use of piezoelectric resonators instead of inductors in power conversion "will lead to a dramatic reduction in the size of power converters." The research facility claims that the "results make it possible to extend this type of compact conversion to isolated converters." So this type of converter is said to be now compatible with a much wider range of applications, such as TVs, phones, tablets and electrical tools. The technology research institute says that in power conversion, piezoelectrics operate at high frequencies, greater than 100 kHz, "with no limits in terms of input power" enabling it to reach power levels of several hundred watts. The range of applications is therefore expected to be very broad, with most converters having a rated power of less than 100 W.

Medical Power Supplies meet CF Requirements

Learn more:
advancedenergy.com

Product Release
2024-09-23

Advanced Energy has developed the NCF150 series of high-isolation, low-leakage current AC/DC power supplies that enable medical equipment designers to meet the cardiac floating (CF) requirements of the IEC 60601-1 medical safety standard using off-the-shelf products. Type CF is the most stringent medical electrical safety classification and is essential for medical products that may come in direct contact with the heart, including dialysis machines, cardiac-related systems and platforms for electrosurgery. The SL NCF150 series delivers a maximum output power of up to 150 W and offers voltages of 12 V, 15 V, 19 V, 24 V and 48 V. An optional 5 V standby and 12 V fan output are also available. All units in the SL NCF150 series have a patient leakage current below 10 µA, feature EMI Class B, 2 MOPP isolation and 5 kV defibrillator pulse withstand capabilities. SL NCF150 power supplies accept a universal input of 85 to 264 V_AC, operate with a full-load efficiency greater than 90% and feature protection against overvoltage, overload, overtemperature and short-circuit conditions as standard. This is the first release of the CF rated family and will be followed by higher power models launching soon.

Working together for Biodiversity with Electronics and AI

Learn more:
we-online.com

Industry News
2024-09-20

"How can we counteract the decline in biodiversity?" This question was discussed extensively at DLD Nature, which took place in September in Munich, Germany. At the conference and for the first time, Würth Elektronik presented in the tech talk with new cooperation partner, Hula Earth, a deep-tech start-up that specializes in the real-time monitoring of biodiversity. Their presentation was titled "Electronics for Innovation in Nature Protection." For real-time measurement, Hula Earth uses solar-powered BioT sensors that continuously collect various biodiversity-relevant data and transmit it via a wireless network. This also works in remote forest areas. The results are combined with satellite data, analyzed using artificial intelligence, and integrated into a user-friendly platform. Würth Elektronik and Hula Earth are now working together to optimize the handmade prototypes of the BioT sensors so that they can be produced efficiently in large quantities. Würth Elektronik is supporting the startup in a variety of ways including support in terms of EMC safety, energy management, functionality, scalability, and energy efficiency as well as prototyping and testing. Additionally, Würth Elektronik provides design-in support, including for circuit board design, interface planning, and the communication software.

Hall-Effect Dual Latch Sensor

Learn more:
melexis.com

Product Release
2024-09-19

Melexis adds the MLX92253 to its Hall-effect dual latch portfolio. This sensor offers two independent signal tracks for minimal jitter as well as consistent 90° phase shift regardless of magnet pole pitch. This enables accurate speed & direction ECU calculation as well as direct transfer across multiple platforms. It is suited for DC motors and encoders used in a wide range of embedded applications, including automotive, alternative mobility, consumer and industrial. The MLX92253 distinguishes itself by featuring two hall plates, one Z axis and one X axis, with two independent signal tracks. It also has a common magnetic center, which ensures a consistent 90° phase shift (quadrature) between the two speed outputs, independent of the magnet pole pitch. It features a chopping frequency of 500 kHz, an operating voltage range from 2.7 V to 5.5 V, a working temperature of -40 °C to 150 °C and an output state feedback during start-up, which can be utilized to convert the two outputs into inputs during start-up. This allows a microcontroller to retrieve the previous state of the MLX92253 before power-down, ensuring that no movement is missed. The device is available in a TSOT23 package and on request as engineering samples in a VA package.

Research: Lithium-Metal Battery with Solid Electrolyte achieves 1070 Wh/L

Learn more:
solidify-h2020.eu

Industry News
2024-09-19

As the coordinator of the H2020 SOLiDIFY consortium, imec, together with 13 European partners, announces the development of a high-performance lithium-metal solid-state battery. The prototype battery pouch cell, manufactured by imec in the battery assembly lab at EnergyVille, Belgium, features a unique "liquid-to-solid" processed solid electrolyte, jointly developed by imec and the partners. It boasts an energy density of 1070 Wh/L, compared to 800 Wh/L for state-of-the art lithium-ion batteries. The manufacturing process, which is said to be cost less than €150 per kWh while being adaptable to existing lithium-ion battery production lines, paves the way for commercially viable solid lithium batteries for electromobility. The high energy density was achieved by combining a high-capacity composite cathode, separated from a thin lithium metal anode by a thin solid electrolyte separator (50 µm), which resulted in a compact battery cell stack. In addition, the consortium overcame mechanical strength and cathode impregnation challenges to increase the cell's charge rate to 3 hours and lifetime to 100 cycles. Compared to liquid electrolytes, the thermally stable solid cell had a reduced flammability, improving safety. The application of nanometer-thin protective coatings enabled the use of cobalt-lean NMC cathodes, reducing environmental impact while providing higher capacity. Next steps include further upscaling of this high-performance battery technology.

N-Channel MOSFETs for 40 – 100 V

Learn more:
rohm.com

Product Release
2024-09-19

ROHM has released N-channel MOSFETs – RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB – featuring ON-resistances that are suited for several automotive applications, including motors for doors and seat positioning, as well as LED headlights. Offered in voltage ratings of 40 V, 60 V, and 100 V, the new products incorporate a split-gate structure to achieve low ON-resistance. All models are qualified under the AEC-Q101 automotive reliability standard. Design engineers can select from among three package types, depending on the application. For space-constrained sets like ADAS, the compact DFN2020Y7LSAA (2.0 mm × 2.0 mm) and HSMT8AG (3.3 mm × 3.3 mm) packages fit well. For automotive power applications, the widely used TO-252 (DPAK) package (6.6 mm × 10.0 mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package. P-channel products are also scheduled for future release.

Design and Service Center in the Greater Boston Area

Learn more:
advancedenergy.com

Industry News
2024-09-19

Advanced Energy has opened a design and service center in Wilmington, MA. The facility will focus on the development of advanced power technologies for semiconductor, industrial and medical applications. Combining laboratory and office space, the center will be the workspace for up to 50 employees. It supports AE's rapid growth strategy by enabling the launch of leading technology platforms, reducing time-to-market for new products, and ensuring smooth transitions to high-volume manufacturing. The design and service center features labs as well as office space with a gym and cafeteria. It is located near top schools like MIT and Northeastern.

Insights into Design Challenges of Motor Control

Learn more:
mouser.com

Industry News
2024-09-19

Mouser Electronics announces an eBook offering a deep dive into motor control, and with the push to achieve a more sustainable future, the challenge is to maximize efficiency while striking a balance with costs. In the eBook dubbed "Mastering Motor Control Design" Mouser offers electrical design engineers of all levels of experience practical information on system parameters and product selection. Topics include selecting the correct type of motor for the application, driver and microcontroller options, motor power components, motor isolation and current sensing, and more. The eBook also includes convenient links to select motor control products.

US Funding for WBG Power Projects

Learn more:
ncsu.edu

Industry News
2024-09-19

The White House and U.S. Department of Defense announced the first year of funding, totaling $19 million, for four additional projects for the Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Microelectronics Commons Hub, headed by North Carolina State University. The first of the four selected projects is "High Permittivity Dielectrics to Increase the Performance of III-Nitride Transistors" and led by NC State. It will increase the efficiency and radiation hardness of advanced transistors used in avionics and satellite applications. Partners include MACOM, EPC Space, Lockheed Martin, University of Florida, NASA and Sandia National Laboratories. The second project is named "Transition Readiness for NITride Rf Overmatch (T/R NITRO)" and led by MACOM. It will deliver advance prototypes of high frequency transistors and circuits for use in electronic warfare, radars, and 5G/6G telecommunications. The partners include NC State, Adroit Materials and the Naval Research Laboratory. The third project is about "Advanced High Voltage Silicon Carbide Switches". Led by GE Aerospace it will push the development of 6.5 to 10 kV planar field-effect transistors (FETs) into a low-volume production environment and develop 6.5 to 10 kV Superjunction (SJ) devices. The partners include Coherent, NC State, Stony Brook University, University at Albany, Naval Research Laboratory, DEVCOM and N.C. A&T State University. The fourth project covers "Advanced Power Switches Using UWBG Gallium Oxide". Led by Kyma Technologies it will advance the state-of-the-art in gallium oxide high voltage switching devices by producing power diodes and power transistors capable of blocking up to 10 kV, and make available the epilayers, devices, and composite substrates to the DoD and community at large through the CLAWS hub. The partners include NC State, University of California at Santa Barbara, Modern Microsystems, the Air Force Research Laboratory, Naval Research Laboratory and GE Aerospace.

Strategic Alliance regarding Semiconductor Ecosystem in India

Learn more:
analog.com

Industry News
2024-09-18

Tata Group and Analog Devices announced a strategic alliance to explore potential cooperative manufacturing opportunities. Tata Electronics, Tata Motors, and Tejas Networks signed a Memorandum of Understanding (MoU) with ADI to enhance strategic and business cooperation, explore opportunities for semiconductor manufacturing in India, and use ADI's products in Tata applications like electric vehicles and network infrastructure. The companies also agree to have strategic roadmap alignment discussions. As previously announced, Tata Electronics is investing in its own facilities by building India's first fab in Dholera, Gujarat with a total investment of $11 billion. In addition, Tata Electronics will be investing another $3 billion in a greenfield facility in Jagiroad, Assam for the assembly and testing of semiconductor chips. Tata Electronics and ADI intend to explore opportunities to manufacture ADI's products in Tata Electronics' fab in Gujarat and OSAT in Assam. Tata Motors and ADI intend to explore opportunities for engagement in electronics hardware components for energy storage solutions and power electronics in both commercial and passenger vehicle businesses. Tejas Networks and ADI intend to explore opportunities for engagement in electronics hardware components for network infrastructure.

Office in the heart of Southeast Asia

Learn more:
we-online.com

Industry News
2024-09-18

In August Würth Elektronik eiSos opened its first Thai branch office - in the Rama 9 business center in Bangkok. The company says that this gives the up-and-coming Asian business a secure base and new impetus for growth. Würth Elektronik eiSos points out that the location in the heart of the vibrant business district has excellent public transport connections. Würth Elektronik's corporate history in Thailand began back in 2006 - with the support of the Würth Elektronik eiSos team in Singapore. The first Field Sales Engineer was then hired in September 2010. The Thailand business developed extremely positively. Under the leadership of Regional Sales Manager Chantwut Zukzwang, General Manager Sebastian Tan and thirteen employees are now driving Würth Elektronik's Thailand business forward. The new location can already rely on a stable sales base that also includes major EMS customers.

Silicon Valley Design and Innovation Centre

Learn more:
xppower.com

Industry News
2024-09-17

XP Power has opened the Silicon Valley Innovation Centre (SVIC) as its new North America Headquarters in San Jose, CA. This 85,000-square-foot facility integrates research and technology development, design engineering, pilot manufacturing, warehousing logistics, and service/support under one roof. The Innovation Centre facilitates rapid development cycles, allowing the company to deliver solutions efficiently - supported by a multi-disciplined Engineering Team with design and industry experience across semiconductor, healthcare, military, and industrial sectors. The facility includes a Reliability Lab with multiple Highly Accelerated Life Test (HALT), Highly Accelerated Stress Screen (HASS) and Environmental Chambers. An etch Plasma Chamber focuses on system validation for semiconductor fabrication equipment, and a 3-meter Anechoic EMC Chamber complements existing EMC compliance test stations to accelerate time-to-market. A dedicated Test Development Team is in place to design custom test equipment for specialized power conversion applications. The SVIC also incorporates eco-friendly features such as electric vehicle charging stations, automated LED lighting and HVAC systems, dishwashers to discourage single-use dishes, and the elimination of all Single-Use Plastics (SUP).

Micro DC/DC Stepup Converter operate from 0.9 V

Learn more:
torexsemi.com

Product Release
2024-09-12

Torex Semiconductor has launched its XCL109/XCL110 series of inductor built-in step-up DC/DC converters. The XCL109/XCL110 series incorporates both the IC and coil into a package measuring 2.0 x 2.5 x h1.04 mm³. It is a step-up DC/DC converter that requires small input and output capacitors as peripheral components. The converter can start operation with an input voltage as low as 0.9 V, making it suitable for devices powered by a single alkaline or nickel-metal hydride battery. The output voltage is adjustable in 0.1 V increments within the range of 1.8 V to 5.5 V, and it operates at ambient temperatures of up to 105 °C. This product is available in three types to suit various applications: The "load disconnect type" cuts off the connection between input and output during standby, minimizing battery consumption, while the "bypass type" maintains the connection between input and output during MCU sleep mode, supplying the battery voltage directly. It boosts the voltage to 3.3 V or other levels only during active mode, thereby reducing power consumption during sleep and contributing to overall low power consumption of the device. The "output OR type" is ideal for output OR connections in configurations with multiple power lines or backup systems. The XCL109/XCL110 series are designed for industrial equipment, IoT, mobile devices, wearables, healthcare, and any other devices that demand compact size, low power consumption, and high functionality/performance while prioritizing battery life. The device is integrated into a CL-2025-02 package, which is pin-compatible with other inductor built-in step-up DC/DC products.

Assuring Electromagnetic Compatibility in Australia

Learn more:
rohde-schwarz.com

Industry News
2024-09-12

Hanwha Defence Australia (HDA) have chosen a Rohde & Schwarz designed and built EMC test solution. This capability is part of Stage 2 of the H-ACE facility where HDA is building the LAND 8116 Phase 1 Huntsman vehicles and LAND 400 Phase 3 Redback Infantry Fighting Vehicles. Custom built with a bespoke turntable for heavy vehicles, the E3 capability will be the largest of its kind in the southern hemisphere, providing the means for H-ACE-built vehicles to be tested to internationally recognised standards. Rohde & Schwarz Australia will be responsible for all elements of supply, including the in-country coordination and delivery of the E3 capability, and will also train the technical workforce to operate the facility.

2024 ASCM Award of Excellence

Learn more:
infineon.com

Industry News
2024-09-12

Infineon has received the "ASCM Award of Excellence – Corporate Transformation" from the Association for Supply Chain Management (ASCM). The award recognizes an organizational transformation that improves business by assessing the supply chain using ASCM's global standards, products, services and resources. Infineon was honored for a supply chain initiative that implemented the Supply Chain Operations Reference (SCOR) model of ASCM. By focusing on customer-centricity, the semiconductor company "significantly improved customer satisfaction, optimized capacity use and realized substantial cost savings". Infineon transformed its supply chain to become more robust, agile, and resilient. The primary goals of this transformation were to enhance forecasting accuracy, implement agile response mechanisms like daily automated execution of the physical flexibility enabled by a superior master data system, adopt cost-efficient procurement practices, and build resilient partnerships. The ASCM is the global pacesetter of organizational transformation, talent development and supply chain innovation. As the largest association for supply chain, ASCM members and worldwide alliances fuel innovation and inspire accountability for resilient, dynamic and sustainable operations.

Current Sensors for up to 800 A delivering 1 MHz Bandwidth

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allegromicro.com

Industry News
2024-09-11

Allegro MicroSystems announced two XtremeSens™ TMR sensors that streamline high power density designs, provide space savings while improving energy efficiency. Allegro's latest solutions, CT455 and CT456, offer high-bandwidth and low noise that enable precise current measurements for AI data center and automotive powertrain applications. The CT455 sensor supports two standard field ranges, allowing it to sense and translate magnetic fields into a linear analog output voltage, while the CT456 supports a preprogrammed ±6 mT field range. They are designed to enable high-accuracy current measurements on PCB or busbar applications from 80 A up to above 800 A, depending on the configuration, with the best performance advantages in the 80-200 A range. Unlike traditional high-power current sensors, Allegro's TMR sensors offer a contactless, non-intrusive solution that delivers 1 MHz bandwidth and a 300 ns response time to enable faster power conversion. The company claims that the devices are "optimized for rapid changes in voltage over time (high dv/dt)". For packaging 8-pin SOIC and TSSOP options are used. Evaluation boards are also available.

World's first 300 mm Power Gallium Nitride (GaN) Technology

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infineon.com

Industry News
2024-09-11

Infineon Technologies has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology, accomplished in an existing and scalable high-volume manufacturing environment - a "breakthrough" which is said to "help substantially drive the market for GaN-based power semiconductors". Chip production on 300 mm wafers offers 2.3 times more chips per wafer than on 200 mm wafers. "The technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride", Jochen Hanebeck, CEO of Infineon Technologies, says. "Infineon is mastering all three relevant materials: silicon, silicon carbide and gallium nitride. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market." Infineon has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach/Austria. The company intends to "further scale GaN capacity aligned with market needs". Infineon claims that "300 mm GaN manufacturing will put Infineon in a position to shape the growing GaN market which is estimated to reach several billion US-Dollars by the end of the decade" and that "fully scaled 300 mm GaN production will contribute to GaN cost parity with silicon on R _DS(on) level, which means cost parity for comparable Si and GaN products. The semiconductor manufacturer will present the first 300 mm GaN wafers to the public at the electronica trade show in November 2024 in Munich.

Transformers for Power Line Communication

Learn more:
we-online.com

Product Release
2024-09-10

Communication between charging stations and electric vehicles via an interface compliant with EN ISO 15118 is a fundamental requirement for the public charging infrastructure. Würth Elektronik now offers the WE-PLC product series of SMT transformers for Power Line Communication (PLC). These PLC transformers are well-suited for galvanic isolation of the PLC system from the power supply. They are designed for data signals between 500 kHz and 30 MHz isolating the low-voltage range from the high-voltage range. The WE-PLC product series offers a high test voltage of 4500 V_RMS for transformers of this package size (13.6 x 9.9 mm² footprint) with a maximum leakage inductance of 0.2 µH. The WE-PLC transformers are available with turns ratios of 1:1:1 and 1:4:3 for EV charging and AC interfaces for grid communication. The operating voltage is up to 250 V_AC.

Industrial 3 kW programmable Power Supplies

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tdk.com

Product Release
2024-09-10

TDK Corporation has introduced the 3000 W TDK-Lambda brand HWS3000 programmable AC/DC power supplies in a 270 x 150 x 61 mm³ case. The nominal output voltages (24 V, 48 V, 60 V or 130 V) and output currents are fully programmable (CV/CC) from zero up to their maximum rating. The HWS3000 series is available with an 85 – 265 V_AC single-phase or three-phase 170 – 265 V_AC input. Output programming can be achieved using a serial RS485 interface (MODBus protocol) or analog 1 – 5 V or 4 – 20 mA signals. The speed fan is variable with typically 45 dB audible noise at <70% load, and a 25 °C ambient temperature. The power supplies can be used in a wide range of applications, including test and measurement, semiconductor fabrication, RF amplifiers, laser machining, printing, and industrial equipment. The HWS3000G can deliver 1500 W with a low-line single-phase input voltage (85 to 132 V_AC) and 3000 W at high-line (170 to 265 V_AC). The HWS3000GT provides 3000 W from a three-phase input voltage of 170 - 265 V_AC. Four nominal output voltages, 24 V, 48 V, 60 V and 130 V, can be programmed to provide 0 - 28.8 V, 0 - 52.8 V, 0 – 66 V, and 0 – 156 V. Up to three units can be connected in series, or ten units in parallel. The output voltage slew rate can be digitally programmed and monitored, along with information regarding cumulative operating time, fault log, and product identification information. Digital programming can be performed without turning the power supply on.

Automotive-qualified Small Signal MOSFETs in tiny Packages

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nexperia.com

Product Release
2024-09-10

Nexperia released single and dual small-signal MOSFETs in miniature DFN packages. The automotive-qualified devices are available in DFN1110D-3 and DFN1412-6 respectively. Particularly the DFN1110D-3 (1.1 mm x 1 mm) package has seen increasingly wide adoption and is quickly becoming the 'de-facto' industry standard package for small-signal MOSFETs and bipolar transistors intended for use in automotive applications. DFN1110D-3 and DFN1412-6 are leadless packages that offer superior thermal performance, with almost 50% lower thermal resistance from junction to ambient (R_thj-s), from a tiny footprint (up to 80% smaller). This makes them a highly attractive alternative to established high-volume leaded enclosures such as SOT23, SOT323, SOT363, or SOT666, thereby addressing the automotive industry's relentless demand for miniaturized components. The DFN1110-D-3 also features side-wettable flanks to support lower-cost automated optical inspection (AOI) of solder joints.

30 V Power MOSFETs for Mass Market Applications

Learn more:
infineon.com

Product Release
2024-09-10

Infineon has expanded its StrongIRFET™ 2 power MOSFET portfolio to 30 V solutions. Optimized for high robustness and ease-of-use, the power MOSFETs were specifically designed to meet the requirements of a wide range of mass market applications. Amongst these applications are industrial switched-mode power supplies (SMPS), motor drives, battery-powered applications, battery management systems, and uninterruptible power supplies (UPS). The 30 V technology offers up to a 40 percent R _DS(on) improvement and up to a 60 percent reduction in Q _G compared to the previous generation of StrongIRFET devices. The StrongIRFET 2 power MOSFETs in 30 V are available now in a TO-220 package. By the end of 2024, the portfolio will be available in a wider range of industry-standard packages and pin-out options, including to DPAK, D²PAK, PQFN and SuperSO8.

2" x 4" 250 W Medical and Industrial Power Supply Series

Learn more:
lambda.tdk.com

Product Release
2024-09-09

TDK announces additional output voltage models to the 250 W rated TDK-Lambda brand CUS250M series of power supplies in the industry standard 2" x 4" footprint. The full range now covers 12 V, 15 V, 18 V, 24 V, 28 V, 36 V and 48 V and is certified to the IEC 62368-1 and IEC 60601-1 safety standards for industrial and medical applications. This includes both Class I and Class II (no earth ground required) installations. The CUS250M has mechanical configurations that enable convection and/or conduction cooling through the product's baseplate to provide silent cooling. Applications include medical, home healthcare, dental, test, measurement, broadcast, professional audio and industrial equipment. The output can be adjusted to accommodate non-standard voltages, either by the factory or using the on-board potentiometer. The CUS250M operates across an 85 to 264 V_AC input and has a earth leakage current of less than 150 μA - including all tolerances. The touch current is <10 μA (Class I) and <70 μA (Class II). In ambient temperatures of -20 °C to +45 °C the CUS250M can deliver up to 250 W conduction cooled without external air. With appropriate derating, operation at up to +80 °C is also possible. The efficiency is up to 94%, and the average efficiency, measured at 25, 50, 75 and 100% loads, is greater than 91%, while offload power consumption is less than 0.5 W when the output is inhibited.

40 V MOSFETs in PDFN 33 Packages

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magnachip.com

Product Release
2024-09-09

Magnachip Semiconductor released four 40V MXT MV MOSFETs designed in Power Dual Flat No-Lead (PDFN) 33 packages for automotive applications. This package reduces the area by more than 60% and the weight by approximately 75% as compared to 40 V MOSFET products packaged in PDFN56. Among these products, three models - AMDV040N029LVRH, AMDV040N036LVRH, and AMDV040N042LVRH - are distinguished by their gate threshold voltage of 1.8 V. The gate threshold voltage determines the point at which the MOSFET switches from an off-state to an on-state. A lower threshold voltage reduces the energy required to operate the MOSFET, thereby decreasing the overall power consumption of the system. For example, the AMDV040N029LVRH provides a typical/maximum R_DS(on) of 3.8 mΩ/5.0 mΩ at V_GS = 4.5 V and of 2.5 mΩ / 2.9 mΩ at V_GS = 10 V. The typical gate charge Q_g at V_GS = 10 V is specified with 30 nC.

2300V Baseplate-less SiC Power Modules

Learn more:
wolfspeed.com

Product Release
2024-09-09

Wolfspeed unveiled a silicon carbide module designed to transform the renewable energy, energy storage, and high-capacity fast-charging sectors through improved efficiency, durability, reliability, and scalability. The 2300V baseplate-less silicon carbide power modules for 1500V DC Bus applications were developed and launched utilizing Wolfspeed's 200 mm silicon carbide wafers. Furthermore, Wolfspeed also announced that it is partnering with EPC Power, who will use the Wolfspeed® modules in utility-grade solar and energy storage systems, which offer a scalable high-power conversion system and high-performance controls and system redundancy. Wolfspeed's 2300V modules will improve system efficiency, while reducing the number of passive components. They are said to "offer 15% greater voltage headroom compared to similar silicon carbide modules, improved dynamic performance with consistent temperature stability, and a substantial reduction in EMI filter size". Wolfspeed's technology achieves a 77% reduction in switching losses over IGBTs and a 2-3x reduction in switching losses for silicon carbide devices intended for 1500V applications. These 2300V modules will enable the industry to adopt the two-level topology, resulting in simplified system design and reduced driver count compared to IGBT-based three-level configurations. The benefits of 2300V modules support a building block approach to scale power tenfold, from kilowatts to megawatts.

Executive Vice President for German Electronics Specialist

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we-online.com

People
2024-09-06

With effect from 1 August 2024 Thomas Garz has been appointed Executive Vice President for the Würth Elektronik eiSos Group. The 37-year-old has been with the Würth Group since 2006. Most recently, he was Senior Vice President of the Würth Line Craft, the core business of the Würth Group, for Scandinavia and additionally responsible for International Systems of the Würth Line. The organizational structure of the Würth Elektronik eiSos Group will remain unchanged as a result of this appointment. Before taking up his position as the Senior Vice President of the Würth Line Craft for Scandinavia, Thomas Garz held various positions, including sales and shop manager, assistant to the management and auditor for Würth.

Long-Term Supply Agreement for SiC Power Devices signed

Learn more:
rohm.com

Industry News
2024-09-05

ROHM and United Automotive Electronic Systems (UAES), a Tier 1 automotive supplier in China, have recently entered into a long-term supply agreement for SiC power devices. Already since 2015, ROHM and UAES have been collaborating and carrying out detailed technical exchanges on automotive applications utilizing SiC power devices. This partnership deepened in 2020 with the establishment of the SiC Joint Research Institute at the UAES headquarters in Shanghai, China. And in 2021 ROHM's advanced SiC power devices and peripheral components were highly evaluated by UAES, resulting in ROHM being selected as a preferred supplier. The close long-standing technical partnership has led to the production and adoption of numerous automotive products equipped with ROHM SiCs, such as onboard chargers and inverters for electric vehicles. This long-term supply agreement is said to ensure UAES sufficient access to SiC power devices to meet the growing demand for SiC-based inverter modules. Going forward, both companies will deepen their collaboration, contributing to technological innovation in the automotive sector by accelerating the development of SiC power solutions for EVs.

Acquisition of Austrian Power Supply Company

Learn more:
recom-power.com

Industry News
2024-09-05

RECOM has enhanced its portfolio of products and capabilities by acquiring Leco. Like RECOM Leco is based in Austria, and according to RECOM Leco "is one of only a few companies that specialize in design and manufacture of full custom, high-end power solutions". By integrating LECO's engineering expertise and high-end power conversion products into its portfolio, RECOM enhances its market position and delivers more, comprehensive, high-end power supply solutions to its global customer base. "We are proud to have established this partnership with LECO. This provides us with an opportunity to expand our engineering capabilities and product portfolio for our customers, especially in industrial, automation & supply chain end-markets, as well as leveraging our global footprint for the sale of LECO high-end products.", Karsten Bier, CEO and Shareholder, RECOM.

Gen-3 Fast SiC to now qualified according to AEC Q101

Learn more:
navitassemi.com

Product Release
2024-09-04

Navitas Semiconductor announced several third-generation automotive-qualified SiC MOSFETs in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages. Navitas' proprietary 'trench-assisted planar' technology is claimed to provide "world-leading performance over temperature" and to deliver high-speed, cool-running operation for electric vehicle (EV) charging, traction, and DC-DC conversion. With case temperatures up to 25°C lower than conventional devices, Gen-3 Fast SiC is said to offer an operating life up to 3x longer than alternative SiC products, for high-stress EV environments. Gen-3 Fast MOSFETs are optimized for fast switching speeds at high efficiencies, and support increased power density in EV applications such as AC compressors, cabin heaters, DC-DC converters, and on-board chargers (OBCs). Navitas' EV Design Center has demonstrated already OBC system solutions up to 22 kW with 3.5 kW/l power density, and over 95.5% efficiency. Both 650 and 1,200 V ranges are now AEC Q101-qualified in the traditional SMT D2PAK-7L (TO-263-7) package. For 400 V EVs, the 650 V-rated, surface-mount TOLL package offers a 9% reduction in junction-to-case thermal resistance (R_TH,J-C), 30% smaller PCB footprint, 50% lower height, and 60% smaller size than the D2PAK-7L. This enables very high-power density solutions, while minimal package inductance of only 2 nH enables fast-switching performance and adequate dynamic package losses. 400 V-rated EV battery architectures are served by the 650 V Gen-3 Fast MOSFETs featuring R_DS(ON) ratings from 20 to 55 mΩ. The 1,200 V ranges from 18 to 135 mΩ and is optimized for 800 V systems.

Dual 5 A Low-Side MOSFET Gate Drivers for High-Frequency Applications

Learn more:
littelfuse.com

Product Release
2024-09-04

Littlefuse launched the IX4341 and IX4342 dual 5 A low-side MOSFET gate drivers, which complete the existing IX434x driver series by adding the remaining two logic input versions. The IX434x series now consists of dual non-inverting, dual inverting, and non-inverting and inverting input versions. The IX4341 and IX4342 drivers' propagation delay times of 16 ns and rise and fall times of 7 ns make them suited for high-frequency applications. Additionally, for higher current requirements, electronics designers can parallel the two channels of the IX4340 and IX4341 devices to form a single 10 A driver. Another feature of the IX434x drivers is their compatibility with TTL and CMOS logic inputs, enabling direct interfacing with most controllers. Furthermore, each output has an independent ENABLE function and under-voltage lockout circuitry (UVLO). In case of eventual insufficient supply voltage, the gate driver output is asserted low, turning the external power device off. The devices find applications in various markets, including general industrial and electrical equipment, appliances, building solutions, data centers, energy storage, and renewable energy – whenever MOSFETs in industrial applications such as switch-mode power supplies, DC-DC converters, motor controllers and power converters need to be driven. In terms of packaging a standard 8-pin SOIC, thermally enhanced 8-pin SOIC, and 3×3 mm² MSOP packages are available.

Evaluation Board for 240 W PD 3.1 Charger with Efficiency >95 %

Learn more:
eggtronic.com

Product Release
2024-09-04

Eggtronic has unveiled an evaluation board (EVB) that allows engineers to speed the development and significantly reduce the size and cost of 240 W power delivery (PD) 3.1 applications while supporting ultra-fast charging through high efficiency. The SmartEgg 240W PD 3.1 EVB has a peak efficiency above 95% and operates at over 90% efficiency from light load to full load. A single stage that combines zero voltage switching (ZVS) power factor correction (PFC) and quasi-forward isolated regulation significantly reduces bill of materials (BOM) and size of key components (including storage capacitors and magnetics) compared to traditional PFC+LLC and PFC+Asymmetric Half-Bridge (AHB) architectures. The result is a platform that delivers light-load energy savings of up to 50%, achieves a power density of 1.34W/cm3 (21.9W/in³) to support extremely compact charger designs and, most importantly, reduces BOM cost. Based on Eggtronic's SmartEgg AC/DC architecture, the EVB incorporates proprietary mixed-signal, low-power EPIC (Eggtronic Power Integrated Controller) 2.0 IC controllers and features built-in protection against overpower, overvoltage, overtemperature, short circuits and brownouts. EPIC, which is based on a 32-bit RISC-V core and a set of high-performance digital and analog peripherals, incorporates an internal structure that supports multiple independent control loops of both standard and proprietary power conversion architectures. Supplied as a dual-port module, the SmartEgg 240W PD 3.1 EVB can be directly modified for any number of charging ports thanks to the flexibility of the EPIC 2.0 controller, which supports many slave buck converters, each acting as a standalone port.

electronica 2024: The electronics Trade Show turns 60

Learn more:
electronica.de

Event News
2024-09-04

electronica celebrated its premiere in 1964 as the first trade fair in Germany devoted solely to electronic components. In the meantime, it has been accompanying innovations in the international electronics industry for six decades, providing a market overview of its latest products, technologies and solutions every two years. In 2024, this trade fair for electronics will celebrate its 60th anniversary from November 12 to 15, occupying all 18 exhibition halls for the first time ever (together with SEMICON Europe in two halls). The focus will be on the future vision of an all electric society. Already at the first edition in Munich in October 1964 a total of 407 companies from 16 countries exhibited on an area of 4,100 square meters, and around 14,000 trade visitors came to visit on the eight days of the fair. Already now the trade show organizer states that the 2024 edition of electronica "will be the biggest electronica of all time".

PCIM Asia 2024 grew significantly

Learn more:
pcimasia-expo.cn

Event News
2024-09-04

PCIM Asia 2024, an international platform for communication and exchange in power electronics, intelligent motion, renewable energy and energy management, successfully concluded late August at the Shenzhen World Exhibition and Convention Center in China. Setting new records across nearly all metrics, the 2024 edition was the largest and most comprehensive iteration of the event to date. Floor space grew by 8,000 m2 (+67 %) to a total of 20,000 m². The number of visitors (from 41 countries) increased 20 % over the 2023 edition to a total of 18,346, while the number of exhibitors (from 13 countries and regions) increased 28 % over the 2023 edition to a total of 232. To promote further dialogue and collaboration, the exhibition presented a series of industry forums, exhibitor forums and round-table discussions, covering topics ranging from wide-bandgap semiconductors and e-mobility to eVTOL development. At these sessions, representatives from several companies and researchers shared insights on development trends, new market applications and cutting-edge research. Alongside the exhibition, the PCIM Asia Conference 2024 once again featured technical advancements and applications in power electronics. 981 conference visitors listened to 3 keynote speeches, 12 oral sessions and 6 poster sessions as well as to 104 presentations. PCIM Asia is jointly organised by Guangzhou Guangya Messe Frankfurt Co Ltd and Mesago Messe Frankfurt GmbH. The next edition will take place from 14 – 16 August 2025 at the Shanghai New International Expo Centre (SNIEC) in Shanghai, China.

Power Factor Correction Chokes für up to 1000 V_DC

Learn more:
itg-electronics.com

Product Release
2024-09-03

ITG Electronics now offers a range of power factor correction chokes (PFCs) for particularly high-voltage applications. Capable of accommodating up to 1,000 V_DC and 1,500 W, the company's PFC333232DH Series includes CCM PFC boost converters with switching frequencies from 100-200 kHz. The series also can be adopted as a straightforward boosted inductor. The solutions are viable for inductance ranges from 82-1600 μH at a maximum length/width/height of 33 mm x 32 mm x 31.6 mm. Compared with traditional toroidal-shaped PFC chokes, the PFC333232DH Series features a flat wire and square core construction to save space and increase power density. The solutions are up to 50% smaller compared with toroidal-shaped PFC chokes with similar power ratings, and their flat wire technology can reduce DC resistance by as much as 40%, leading to substantially lower copper losses. The PFC chokes are applicable for AC/DC conversion in industrial, equipment and automotive applications. The high-current output chokes can handle up to 41.9 A with approximately 50% roll off.

Medically approved 4:1 input DC/DC Converters

Learn more:
xppower.com

Product Release
2024-09-03

XP Power has introduced the JMR03/10/20 series of 3 W, 10 W, and 20 W medically approved DC/DC converters that offer a 4:1 input ratio. These devices provide 2 x MOPP (Means of Patient Protection) with 2 μA leakage current, ensuring integration into both BF (Body Floating) and CF (Cardiac Floating) rated healthcare applications. Their no-load input idle current is specified down to 4 mA, depending on the model. These fully encapsulated products are suited for use in applications like medical imaging, patient monitoring, patient treatment, dentistry, and respiratory care equipment. Models within the JMR03 (3.5 W), JMR10 (10 W), and JMR20 (20 W) series are available with output voltages of 5 V, 12 V, 15 V ±12 V or ±15 V; the JMR10/20 series offer an additional ±5 V output. The dual-output models can also provide a single 10 V, 24 V or 30 V output. The single output models can also be adjusted by -10% to +10% of the output voltage for non-standard requirements. All output power and voltage combinations can operate from either a 24 V (9.0 - 36.0 V) or 48 V (18.0 - 75.0 V) input, with the JMR03/10 series additionally operating from a 12 V (4.5 – 18 V) input. The operating temperature range for the JMR03/10/20 series is from -40 °C to +100 °C. All models are protected against short circuit and overload conditions, feature a remote on/off function, and have an input-to-output isolation voltage of 5 kV_AC. Safety certification includes UL/CSA/IEC/EN 60601-1 and UL62368-1 with CE and UKCA markings for the low voltage and RoHS Directives.

Current Sensors achieve ASIL C(D) Compliance

Learn more:
melexis.com

Industry News
2024-08-29

Melexis reaches ASIL C safety compliance with its smart IVT (current, voltage, temperature) sensing platform. The Hall-effect MLX91230 and Shunt interface MLX91231 simplify the achievement of ISO 26262 ASIL C(D) architecture for critical vehicle functions such as battery management systems (BMS), smart pyrofuses, and high-voltage charging systems. Both devices integrate a wide range of smart functionality, including the microcontroller unit (MCU) with on-board flash memory that supports custom software deployment and extensive compensation of system imperfections. The diagnosable OCD allows for direct input to the Pyro-Fuse driver, enabling the simple deployment of smart pyrofuses with fewer components. Furthermore, the ASIL C safety level applies to the current sensing function and OCD, as well as the additional temperature and voltage measurement channels. The selectable LIN or UART output enables integration with 12V battery applications and power distribution modules, as well as direct communication with BMS or UART-over-CAN.

240 V/1 kA Bidirectional Power TVS Diode in a Surface Mount Package

Learn more:
bourns.com

Product Release
2024-08-29

Bourns has introduced "the industry's first 240 V/1 kA Bidirectional Power TVS (PTVS) Diode that offers the highest power density available in a surface mount package". The PTVS1-240C-M PTVS Diode offers 1 kA surge handling capability under 8/20 µs test conditions and is thus suited for a broad variety of systems that employ high-voltage DC bus architectures. These systems commonly experience high current switching transients and dynamic load behaviors where snubbing is needed, or protection of bus-powered subsystems is required. The PTVS1-240C-M PTVS Diode is a low-leakage device consuming 10 μA in standby while delivering a maximum breakdown voltage of 295 V, repetitive standoff voltage of 240 V and precise clamping voltage of 340 V. Under 10/350 μs conditions, this device is rated for 200 A peak current, and its voltage breakdown sensitivity over temperature shows a linearity of 0.1 %/°C. The company reports that the "surface mount package offers a significant reduced PCB footprint and lower inductance design advantages compared to traditional through-hole mounted Power TVS Diodes". Applications that can benefit from the features and capabilities of the Model PTVS1-240C-M include industrial power systems, motor controllers and inverters, solar inverters, battery energy storage systems, and factory automation. The device is UL497B certified and meets IEC 61000-4-5 standard specifications. It is also RoHS compliant and halogen free.

European GaN Company establishes Asian Subsidiary

Learn more:
wise-integration.com

Industry News
2024-08-28

Wise-integration, a French company active in digital control of gallium nitride ICs for power supplies, announced the launch of its subsidiary Wise-integration Ltd., based in Hong Kong to help Chinese customers achieve their power/performance/cost goals and accelerate its growing business in China. In addition to serving as the company's financial hub for regional transactions and boosting its presence generally in the Asian market, the subsidiary will enable the company to take advantage of business opportunities in China, a large and receptive market for its GaN-based power electronics solutions with digital control. In the past two years, Wise-integration announced partnerships with companies in South Korea and Taiwan to help bring its technologies to those markets. The company's product markets include consumer electronics and industrial applications like robotics, as well as data centers and electric vehicles. All of its solutions address the increasing demands for miniaturization, electrification and efficient power management. Led by James Ho, as China business development director, Wise-integration Ltd. is based in HKSTP (the Hong Kong Science and Technology Park).

Intelligent Power Device for BLDC Motor Drives

Learn more:
toshiba.semicon-storage.com

Product Release
2024-08-27

Toshiba Electronics has launched a small intelligent power device (IPD) for space-constrained brushless DC (BLDC) motor drive applications such as air conditioners, air purifiers, and pumps. The IPD, TPD4165K, has an increased maximum output current of 3 A, compared to the 2 A rating of Toshiba's existing products like TPD4163K, or TPD4164K. The device is suitable for sine-wave drive. As power supply voltage may fluctuate significantly in some regions where the IP could be used, the absolute maximum voltage rating (V_BB) has been increased to 600 V to enhance long-term reliability. This represents a 20% increase over Toshiba's previous products. TPD4165K is housed in a through-hole HDIP30 package with dimensions of 32.8 mm x 13.5 mm x 3.525 mm. This has a 21% smaller footprint than the DIP26 package used for many of Toshiba's previous products. It supports either three-shunt or single-shunt resistor circuit for current sensing. Safety features like over-current, under-voltage and thermal shutdown are already implented. Additionally, an external signal can be applied to the SD pin to control the behavior of the output stage. The DIAG output pin provides the status of the safety conditions. Designers can freely access a reference design for a sensorless BLDC motor drive circuit based upon the new TPD4165K and Toshiba's TMPM374FWUG microcontroller with vector control engine capability. The reference design data can be downloaded from Toshiba's website.

Absorber Patch Attenuates like a Shielding Cabinet

Learn more:
we-online.com

Product Release
2024-08-27

Würth Elektronik has launched its hybrid WE-EMIP EMI absorber sheet, a convenient solution for preventing electromagnetic interference. The integrated adhesive layer makes the patch easy to stick on. It offers an attenuation of more than 40 dB over a wide frequency range. Both isolated and non-isolated versions are available. The non-isolated version allows the option of earthing. The hybrid absorber sheet consisting of EMI absorber material and aluminum layer is now available in the following sizes: as a sheet 105 mm × 74 mm, 297 mm × 210 mm or as a roll 15 m × 50 mm. The patch offers up to 12 times higher attenuation than previously available absorber sheets and helps achieve attenuation values otherwise attainable only with shielding cabinets.

Joining the Global Battery Alliance

Learn more:
xcelerator.siemens.com

Industry News
2024-08-27

Siemens Digital Industries Software announced today it has joined the Global Battery Alliance (GBA), a collaboration platform that brings together international organizations, NGOs, industry actors, academics and multiple governments to align collectively in a pre-competitive approach, to drive systemic change along the entire battery manufacturing value chain. The vision of the GBA is to achieve three fundamental outcomes, which Siemens endorses and actively contributes to: establish a circular battery value chain, establish a low carbon economy in the value chain, and safeguard human rights and economic development. Through dedication to these principles, Siemens aims to bring about sustainable practices within the battery industry that not only minimize environmental impact but also create new job opportunities and generate additional economic value for communities worldwide. By joining GBA, Siemens is aligning with major stakeholders across the entire battery supply chain, spanning from material developers to cell suppliers, OEMs, and government bodies to strive towards a greener and more ethical future.

Investment in additional R&D Capabilities in Europe and Asia

Learn more:
lem.com

Industry News
2024-08-23

To satisfy the growing global demand for current and voltage sensing driven by the push towards decarbonization and greater electrification, LEM has opened new research and development facilities in Munich and Shanghai. The two sites are said to enable LEM to build greater intelligence into its sensors and to have development bases closer to key customers, while also promoting deeper collaboration on projects and the efficient sharing of vital product design information. While the China site will be kitted out with the very latest laboratory equipment, the site in Germany will focus on ASIC design and semiconductor technology that will help accelerate LEM’s innovation in integrated current sensors (ICSs). This latest investment in additional R&D facilities in Europe and Asia follows on from LEM’s recent inauguration of a factory in Malaysia. LEM’s investment in the state of Penang was an acknowledgment of the region’s expertise in ASIC technology and its specialization in semiconductor design and production. There are already 10 employees in place at Munich and this number will increase in line with LEM’s growth plans for the site. At the 1400 m² Shanghai facility, there are currently 30 staff with the capacity to more than double that number in the future, many of whom will be involved in R&D.

Ideal Diodes in small TSSPs

Learn more:
nexperia.com

Product Release
2024-08-22

Nexperia has introduced two ideal power diode ICs. The NID5100 is suitable for standard industrial and consumer applications while the NID5100-Q100 has been qualified for use in automotive applications. Ideal diodes are MOSFET-based devices that offer much lower forward voltage drop than traditional diodes and make a good replacement option to standard diodes in systems where power efficiency is paramount. The NID5100 and NID5100-Q100 ideal diodes are available in small TSSP6/SOT363-2 leaded plastic packages measuring 2.1 mm x 1.25 mm x 0.95 mm. Applications that can benefit from their electrical performance include smart meters, fire/security sensors, battery powered wearables, and automotive telematics units. The NID5100 is a PMOS based ideal diode where the gate voltage of an internal MOSFET regulates the anode-to-cathode voltage to be eight to ten times lower than the forward voltage drop of similarly rated Schottky diodes. Besides the low forward drop, the MOSFET-based ideal diode also helps to reduce reverse DC leakage current by up to 100 times compared to a typical Schottky diode. The NID5100 supports "OR-ing" multiple power supplies while retaining reverse polarity protection and provides ultra-fast response time for smooth power transfer. Its forward regulation voltage is 31 mV with forward currents up to 1.5 A.

MOSFETs in SMD Package for High Performance Applications

Learn more:
aosmd.com

Product Release
2024-08-21

Alpha and Omega Semiconductor has announced Power MOSFETs in LFPAK 5x6 packages for voltages of 40 V (AOLF66412, AOLF66413 and AOLF66417), 60 V (AOLF66610), and 100 V (AOLF66910). The devices are designed to withstand harsh environments while maintaining MOSFET performance in applications such as industrial, server power, telecommunications, and solar, where high reliability is required. The LFPAK packaging enables higher board-level reliability due to key packaging features such as gull-wing leads, which offer a ruggedized solution for board-level environmental stresses. The gull-wing leads also enable optical inspection during PCB manufacturing. Another feature enhancement is the LFPAK's larger copper clip, which improves electrical and thermal performance. Advantages of the large clip include improved current handling capabilities, reduced on-resistance, and better heat dispersion compared to wire bonding. A large clip also has low parasitic inductance, enabling lower spike voltage in switching applications. The devices operate with gate-source voltages of ±20 V at maximum junction temperatures of 175 °C. The drain current @ 25 °C and the maximum R_DS(on) both depend on the model ranging from 187 to 294 A or, respectively, 1.5 to 4.7 mΩ at a gate-source voltage of 10 V.

Industrial AC/DC Power Supplies in 2" x 3" Packages

Learn more:
tracopower.com

Product Release
2024-08-20

Traco Power released its TXO family of 45, 60 & 120 W compact AC/DC Power supplies. These are the first 3 power levels of a TXO family of power supplies that will eventually go to 500 W. The TXO line specifically focuses on providing cost-efficient industrial power supplies. Efficiencies of up to 92 % allow for a compact design, and these models are designed to meet the ErP directive (< 0.3 W no load power consumption). Features include an internal EN55032 class B filter, as well as EMC characteristics dedicated for applications in industrial/automation and test & measurement fields. Basic features include a 2" x 3" open-frame construction, a universal input range of 85 – 264 VAC, 3000 VAC reinforced I/O isolation, an internal EN55032 class B filter, short circuit and overvoltage protection, IEC/EN/UL 62368-1 safety approvals and EN 61000-3-2 compliance. The TXO 45/60 series operates at full load convection cooled in the range of -20 °C to +50 °C, while the TXO 120 series operates as follows: 100 W convection / 120 W forced air -20 °C to +50 °C.

Online EV-Charging Resource Hub

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arrow.com

Industry News
2024-08-19

Arrow Electronics has developed and launched a resource for EV charging for the automotive industry. Expanding its library of content, Arrow helps engineers developing the next generation of electric vehicle chargers and the corresponding software ecosystem that supports them. The hub offers design and technical support across the three electric vehicle charger categories: on-board charger, AC chargers and DC (or fast) chargers. Among the resources now available, Arrow has introduced a free eBook that delves into the latest developments in EV charging, such as costs, adapters, and the economic advantages of electric vehicles. There are also webinars available on-demand, including "Trends and Technologies for Next-Gen EV Charging Solutions".

eBook about Connectivity Needs and Technologies for Connected Homes

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mouser.com

Industry News
2024-08-19

Mouser Electronics has released an eBook in collaboration with Qorvo, offering a detailed look at the connectivity requirements for smart homes and the different technologies used to support them. In Next-Gen Connectivity for Smart Living, experts from Mouser and Qorvo offer a deep dive into the technologies that underpin connectivity for smart homes, including Wi-Fi 7, ultra-wideband, and IoT standards like Zigbee, Thread, and Bluetooth Low Energy. The eBook features six different articles, each of which includes detailed infographics and links to relevant design tips from Qorvo including links to a dozen recommended Qorvo products.

Funding of up to $1.6 Billion in CHIPS and Science Act

Learn more:
ti.com

Industry News
2024-08-16

Texas Instruments (TI) and the U.S. Department of Commerce have signed a non-binding Preliminary Memorandum of Terms for up to $1.6 billion in proposed direct funding under the CHIPS and Science Act to support three 300 mm wafer fabs already under construction in Texas and Utah. In addition, TI expects to receive an estimated $6 billion to $8 billion from the U.S. Department of Treasury's Investment Tax Credit for qualified U.S. manufacturing investments. The proposed direct funding, coupled with the investment tax credit, would help TI provide a geopolitically dependable supply of essential analog and embedded processing semiconductors. The proposed direct funding under the CHIPS Act would support TI's investment of more than $18 billion through 2029, which is part of the company's broader investment in manufacturing. This proposed direct funding will support three new wafer fabs, two in Sherman, Texas, (SM1 and SM2) and one in Lehi, Utah (LFAB2), specifically to construct and build the SM1 cleanroom and complete pilot line for first production, to construct and build the LFAB2 cleanroom for first production and to construct the SM2 shell. They will produce semiconductors in 28 nm to 130 nm technology nodes.

Call for Papers for the 75th ECTC

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ectc.net

Event News
2024-08-16

The IEEE Electronic Components and Technology Conference (ECTC), a major technical conference and product exhibition for the world's semiconductor packaging industry, has announced a Call for Papers for ECTC 2025, the conference's 75th anniversary. The 75th annual ECTC will take place May 27-30, 2025 at the Gaylord Texan Resort & Convention Center in Dallas. More than 2,000 scientists, engineers and business people from more than 20 countries are expected to attend. Abstract submission has already been opened and the deadline for submissions is October 7, 2024. The ECTC 2025 technical program will address new developments, trends and applications for a broad range of topics, including components, materials, assembly, reliability, modeling, interconnect design and technology, device and system packaging, heterogeneous integration, wafer level packaging, photonics and optoelectronics, IoT, 5G, quantum computing and systems, 2.5D and 3D integration technology, and other emerging technologies in electronics packaging.

High-Performance Power Module Family

Learn more:
semiq.com

Product Release
2024-08-14

SemiQ has added an S7 package to its QSiC™ family of 1200 V, half-bridge MOSFET and Schottky diode SiC power modules. The parts enhance design flexibility for power engineers by providing compact, high-efficiency, high-performance options for new designs while supporting drop-in-replacement in legacy systems that require more efficient operation. This latest announcement sees the availability of a 529A MOSFET module (GCMX003A120S7B1: RdsOn 3.0 mΩ, B1 package), a 348A MOSFET module (GCMX005A120S7B1: R_dsOn 4,9 mΩ, B1 package), and two low-noise SiC Schottky diode half-bridge modules (GHXS300A120S7D5 for 300 A and GHXS400A120S7D5 for 400 A) in an S7 package with industry-standard 62.0 mm footprints and a height of 17.0 mm. The package addresses the size, weight and power requirements of demanding applications ranging from induction heaters, welding equipment and uninterruptible power supplies (UPS) to photovoltaic and wind inverters, energy storage systems, high-voltage DC-DC converters and battery charging systems for electric vehicles (EVs). To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level and performs various stress. All parts have undergone testing surpassing 1400 V.

New Semiconductor Material: AlYN promises more Energy-Efficiency

Learn more:
iaf.fraunhofer.de

Industry News
2024-08-14

Researchers at Fraunhofer IAF (Fraunhofer Institute for Applied Solid State Physics) have reported that they "made a breakthrough in the field of semiconductor materials": With Aluminum Yttrium Nitride (AlYN), they have succeeded in fabricating and characterizing a new and promising semiconductor material using the MOCVD process. Due to its excellent material properties and its adaptability to gallium nitride (GaN), AlYN is said to have "enormous potential for use in energy-efficient high-frequency and high-performance electronics for information and communications technology". AlYN shows outstanding material properties, however, the growth of the material has been a major challenge. Until now, AlYN could only be deposited by magnetron sputtering. Researchers at Fraunhofer IAF have now succeeded in fabricating the new material using metal-organic chemical vapor deposition (MOCVD) technology, thus enabling the development of new, diverse applications. The institute thinks that "with its promising material properties, AlYN could become a key material for future technological innovations". Recent research had already demonstrated the material properties of AlYN, such as ferroelectricity. In developing the new compound semiconductor, the researchers at Fraunhofer IAF focused primarily on its adaptability to gallium nitride (GaN) – especially in terms of the lattice structure.

AC Surge Protective Devices

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bourns.com

Product Release
2024-08-14

Bourns' Model 1270 and 1280 Series Din-Rail AC Surge Protective Devices (SPDs) are IEC/EN 61643-11 compliant Class I + Class II / T1+T2 SPDs, and Model 1280 features an Advanced Thermal Disconnector (TD+) for enhanced protection that eliminates the need for upstream overcurrent protection. Both model series also feature a window fault indicator and remote alarm to help monitor the operating status of the surge protector. In addition, Bourns announced its Model 1430 and 1440 Series Din-Rail DC Surge Protective Devices (SPDs). The two series are IEC/EN 61643-31 compliant Class I + Class II / T1+T2 SPDs. Designed to protect DC power systems, the 14 new models offer protection voltage ranging from 48 VDC up to 1500 VDC and feature high energy MOV technology. In addition, the Model 1440 Series features an Advanced Thermal Disconnector (TD+) as well. Both model series have a replaceable modular design, and also include a window fault indicator and remote alarm, providing enhanced surge protector operating status monitoring.

Power Factor Correction Chokes für up to 3,300 W

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itg-electronics.com

Product Release
2024-08-13

ITG Electronics has expanded its portfolio of power factor correction chokes (PFCs) with a set of solutions designed for high switching frequencies. Capable of handling up to 3,300 W the company's PFC433835B Series include CCM PFC boost converters with switching frequencies from 100 – 200 kHz. An extension of ITG Electronics' Cubic Design set of power factor correction chokes, PFC433835B Series solutions are suitable for Inductance ranges from 90 – 285 µH and have footprints up to 43 mm x 35 mm and maximum heights of 38 mm. Compared with traditional toroidal-shaped PFC chokes, the PFC433835B Series features a flat wire and square core construction to save space and increase power density. The solutions are said to be up to 50% smaller compared with toroidal-shaped PFC chokes with similar power ratings, and their flat wire technology can reduce DC resistance by as much as 40%, leading to substantially lower copper losses.

DC/DC Buck Converter deliver up to 20 A

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tdk.com

Product Release
2024-08-13

TDK Corporation expanded its TDK-Lambda i7A series of non-isolated buck (step-down) DC/DC converters with the industry-standard 1/16th brick pinout. 20 A output models with a 500 W maximum rating are now available, offering a trimmable 3.3 – 32 V output capability and operation from 28 V up to 60 V input. An adjustable over-current limit is also available as an option, reducing stress on the converter or load when exposed to excessive overcurrent conditions and facilitating fine-tuning based on actual system requirements. The 20A i7A models can be used to derive additional high-power outputs at higher efficiency than isolated DC-DC converters. These products are suited for use in mobile robotics, drones, medical, industrial, test and measurement, communications, computing, and portable battery-powered equipment. Efficiencies of up to 96% minimize internal losses and allow the 20 A i7A models to operate in ambient temperatures of -40 °C up to +125 °C, even with low airflow conditions. The i7A's design provides low output ripple and excellent response to dynamic loads. All models have safety certification to the IEC/UL/CSA/EN 62368-1 standards, with CE and UKCA marking to the Low Voltage and RoHS Directives.

Intelligent Power Module for Industrial Motors up to 4 kW

Learn more:
infineon.com

Product Release
2024-08-12

Infineon Technologies expands its 7th generation TRENCHSTOP™ IGBT7 product family with the CIPOS™ Maxi Intelligent Power Module (IPM) series for low-power motor drives. The IM12BxxxC1 series is based on the TRENCHSTOP IGBT7 1200 V and rapid diode EmCon 7 technology. Thanks to the latest micro-pattern trench design, it offers exceptional control and performance. This results in significant loss reduction, increased efficiency, and higher power density. The portfolio includes three new products in variants ranging from 10 A to 20 A for power ratings of up to 4.0 kW: IM12B10CC1, IM12B15CC1 and IM12B20EC1. The IM12BxxxC1 series is packaged in a DIP 36x23D housing. It integrates various power and control components. This makes it "the smallest package for 1200 V IPMs with the highest power density and best performance in its class", the company says. The IM12BxxxC1 series is particularly suitable for low-power drives in applications such as motors, pumps, fans, heat pumps and outdoor fans for heating, ventilation, and air conditioning. The IPM series offers an isolated dual-in-line molded housing also meets the EMI and overload protection requirements of demanding designs. In addition to the protection features, the IPM is equipped with an independent UL-certified temperature thermistor.

Connect with the Advanced Battery and Electric & Hybrid Vehicle Technology Community

Learn more:
thebatteryshow.com

Event News
2024-08-10

Join North America's largest advanced battery event, The Battery Show and Electric & Hybrid Vehicle Technology Expo, October 7-10, 2024, at Huntington Place, Detroit. Discover the latest technologies and solutions from over 1,150 exhibitors including industry heavy hitters such as Dow, Parker, Hongfa America, Henkel, Honeywell, Siemens, Ampherr, Sabic, Trumpf and more across multiple sectors including automotive stationary, medical, aerospace, commercial, and industrial applications. Experience live product showcases and visit Pavilions on the show floor, including the new Lead and Recycling Pavilions, for industry-specific innovations. Enhance your knowledge with free educational sessions at the Battery Tech Theatre and Open Tech Forum. For a deeper dive, upgrade to our five-track conference covering advanced battery design, manufacturing, market forecasts, and regulatory trends. Network with over 19,000 professionals in the advanced battery and H/EV community through various expo events. Don't miss the ''Welcome to Detroit: An Electrifying Evening in the Motor City" where we celebrate the new home of The Battery Show and Electric & Hybrid Vehicle Technology Expo in Downtown Detroit. We can't wait to see you there! Register now to secure your FREE expo pass or enjoy a $100 discount on conference passes with code BOD.

Automotive DC/DC Converters with "highest Power Density"

Learn more:
infineon.com

Industry News
2024-08-09

Vitesco Technologies created a new generation of DC/DC converters that are claimed to “set new standards in power density (efficiency of over 96 percent) and sustainability for power grids, power supplies, and OBC (On-Board Chargers)”. For this design Vitesco has selected the CoolGaN™ Transistors 650 V from Infineon. With GaN Transistors, Vitesco Technlogies was able to design its Gen5+ GaN Air DC/DC converters with passive cooling, which reduces the system's overall cost. The GaN devices also allow for simplified converter design and mechanical integration. As a result, the DC/DC converters can be flexibly positioned in the vehicle, reducing the workload for manufacturers. The use of GaN also allows the power of the converters to be scaled up to 3.6 kW and the power density to be increased to over 4.2 kW/l. The Gen5+ GaN Air DC/DC converters offer an efficiency of over 96 percent and improved thermal behavior compared to the Gen5 Liquid-Cooled converters. They provide a two-phase output of 248 A at 14.5 V continuous. The phases can be combined to achieve the maximum output power. Still, it is also possible to switch off one phase under partial load conditions and interleave the switching frequency between the two phases.

Partnering on new Capacitor-based Energy Storage Systems (CESS)

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musashienergysolutions.com

Industry News
2024-08-08

Flex and Musashi Energy Solutions announced an extensive collaboration to supply Flex-designed and manufactured Capacitor-based Energy Storage Systems (CESS) featuring Musashi's Hybrid SuperCapacitor (HSC) technology. These systems are designed to integrate with server rack power systems to address significant challenges with utility power in artificial intelligence (AI) data centers. First to market with Musashi's HSC technology, Flex has collaborated with Musashi to develop strategic technology and product development roadmaps for current and future products that enable hyperscale operators to mitigate utility power fluctuations in data centers deploying AI workloads. Flex's CESS solutions are designed to balance peak power and protect the grid from intense power surges and line disturbances during AI training and inference activities taking place in data center environments. Musashi's HSCs are designed to provide high-reliability energy storage in many applications. The technology is said to reduce equipment size, weight and total cost of ownership. The new solution is announced to offer "a significantly longer lifespan than current battery energy storage systems, with ability to provide multi-million charge/discharge cycles – essential for high-performance capacity and dependability needed in the data center". Furthermore, it provides a wide operating temperature and inherent safety as the cells are able to operate in temperature ranges from -30 to over +70 °C, plus UL 810A certification and completion of UL 9540A testing for thermal runaway at the cell level.

Personnel Change in Executive Board

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rohde-schwarz.com

People
2024-08-08

Peter Riedel has decided to resign from his position as President and COO of Rohde & Schwarz for personal reasons, and he has already left the company, however, he will remain associated with Rohde & Schwarz in an advisory role. After the departure of Peter Riedel, the Executive Board of the Munich technology company now consists of Christian Leicher as President and Chief Executive Officer and CTO Andreas Pauly. For the time being, Andreas Pauly will assume the tasks of Chief Operating Officer on an interim basis. Peter Riedel had been on the Executive Board as Chief Operating Officer since 2014.

SiC Power Semiconductor Fab in Malaysia

Learn more:
infineon.com

Industry News
2024-08-08

As global decarbonization efforts drive demand for power semiconductors, Infineon Technologies has officially opened the first phase of a new fab in Malaysia that will become the world's largest and most competitive 200-millimeter silicon carbide (SiC) power semiconductor fab. Malaysian Prime Minister YAB Dato' Seri Anwar Ibrahim and Chief Minister of the state of Kedah YAB Dato' Seri Haji Muhammad Sanusi Haji Mohd Nor joined Infineon CEO Jochen Hanebeck, to symbolically launch production. The highly efficient 200-millimeter SiC power fab will strengthen Infineon's role as the global leader in power semiconductors. The first phase of the fab, with an investment volume of two billion euros, will focus on the production of silicon carbide power semiconductors and will include gallium nitride (GaN) epitaxy. SiC semiconductors have revolutionized high-power applications because they switch electricity even more efficiently and enable even smaller designs. SiC semiconductors increase efficiency in electric vehicles, fast charging stations and trains as well as renewable energy systems and AI data centers. 900 high-value jobs will be created already in the first phase. The second phase, with an investment of up to five billion euros, will create the world's largest and most efficient 200-millimeter SiC power fab. Overall, up to 4.000 jobs will be created with the project.

Electric Vehicle Charger Reference Designs

Learn more:
microchip.com

Product Release
2024-08-07

To accelerate the time to market of an EV charger, Microchip Technology now offers three flexible and scalable EV Charger Reference Designs including a Single-Phase AC Residential, a Three-Phase AC Commercial (up to 22 kW) with Open Charge Point Protocol (OCPP) and System-on-Chip (SoC) and a Three-Phase AC Commercial with OCPP and Display. Most of the active components for the EV charger reference designs are available from Microchip, including the microcontroller (MCU), analog front-end, memory, connectivity and power conversion. This significantly streamlines the integration process, enabling manufacturers to speed time to market for new charging solutions. These reference designs offer complete hardware design files and source code with software stacks that are tested and compliant to communication protocols, including OCPP. OCPP offers manufacturers a standard protocol to communicate between the charge point or charging station and a central system. This protocol is designed to enable interoperability of the charging applications regardless of the network or vendor. The EV Reference Designs are supported by MPLAB X Integrated Development Environment (IDE) to help designers minimize development time, as well as MPLAB Harmony v3 and MPLAB Code Configurator.

Series of Wire-Wound Ferrites extended

Learn more:
we-online.com

Product Release
2024-08-07

Würth Elektronik now offers its WE-RFI inductors in sizes 0402 and 0603, which can be used as inductors for RF applications or as ferrites for interference suppression. Here the manufacturer responds to increasing miniaturization and complements the existing sizes 0805 and 1008. The components are suitable as low-pass filters (for filtering high-frequency noise), data line filters, supply voltage decoupling, low-frequency radio applications, and RFID. As wire-wound ferrites, the WE-RFI inductors attain higher impedances than normal ferrites, even at high frequencies, and over a wider bandwidth. Unlike multilayer ferrites, they show no DC bias behavior. As RF inductors, they offer high inductance values from 20 nH up to 47 µH. They are characterized by low RDC and consequently a high rated current of up to 1.91 A at ΔT = 40 K. A design kit is available for this component group, which Würth Elektronik will always replenish free of charge, so developers always have inductances of different values to hand.

High-Power Semiconductor Company: President Change

Learn more:
semikron-danfoss.com

People
2024-08-07

Dominic Dorfner will take over as president Semikron Danfoss, when Claus A. Petersen retires on August 31, after 40 years in the Danfoss Group. He has been leading Danfoss Silicon Power and Semikron Danfoss for the last 26 years. Dominic Dorfner has been named new president of the company and will start working in his new position on September 1, 2024. He joined Semikron Danfoss in 2021 as head of the industry business in Danfoss Silicon Power, and for the past 13 months he has been leading the automotive division in Semikron Danfoss. Though now retiring as company president, Claus A. Petersen is not completely leaving Semikron Danfoss, as he has joined the board of directors.

President of Energy Business

Learn more:
abb.com

People
2024-08-05

Effective from the beginning of August 2024, Per Erik Holsten is the president of ABB Energy Industries. He moves into the role from the position of hub manager for Northern Europe at ABB Energy Industries. Per Erik succeeds Brandon Spencer, who has become president of the ABB Motion business area. Per Erik offers vast experience within the energy sector, from traditional sources through to key energy transition industries including hydrogen, offshore wind and Power-to-X. Per Erik Holsten holds an MBA of International Business from the University of East London, UK. He also studied Engineering at Sør-Trøndelag University College (HiST), Norway. He is based in Oslo, Norway.

SiC MOSFETs for High-Voltage Drives in EVs

Learn more:
starpowereurope.com

Product Release
2024-08-05

With three half-bridge modules in SiC MOSFET technology, the manufacturer StarPower is expanding its range of power semiconductors for use in the drivetrain of electric vehicles. The devices, dubbed MD19HFC120N6HT, MD22HFC120N6HY and MD29HFC120N6HT, are characterized by a blocking voltage (V_DSS) of 1200 V. This means that the products can be used in environments with an 800 V on-board power supply. The individual models of the MOSFET family differ in their on-resistance (R_DS(ON)), which covers the range between 1.8 mΩ and a maximum of 2.82 mΩ depending on the type. All models in this product family can be connected in parallel to increase the current. These MOSFETS are supplied in a 2-in-1 housing, which is optimized for low parasitic inductance in order to suppress unwanted oscillation tendencies. Heat loss is dissipated via a solid copper base plate with PINFIN structures for optimum cooling. The ceramic material silicon nitride (S₃N₄) is used as the carrier substrate, employing the sophisticated AMB (Active Metal Brazing) process.

32-bit-DSCs with more Peripherals for Power Applications

Learn more:
microchip.com

Product Release
2024-07-30

Microchip has launched its dsPIC33A Core family of Digital Signal Controllers (DSCs) which well-suited for motor control, power supply, charging and sensing systems. Built around a 32-bit CPU architecture with a 200 MHz operating speed, the DSC family's core includes a Double-Precision Floating-Point Unit (DP FPU) and DSP instructions for numerically intensive tasks in many closed-loop control algorithms. The architecture enables real-time control coupled with a comprehensive development tool ecosystem to streamline and accelerate the design process. The DSCs provide additional math and data processing, higher code efficiency, faster context switching and reduced latency than former members of the family. This allows for a faster response time to transient and safety-critical events. New and upgraded peripherals - such as high-resolution PWMs specifically engineered for motor control and digital power conversion - are designed to support progressive technology development in various markets including automotive, industrial, consumer, E-Mobility, data center and sustainable solutions segments. The dsPIC33A family features integrated analog peripherals, including 12-bit ADCs capable of conversion rates up to 40 Msps, comparators and operational amplifiers. These analog peripherals, in conjunction with Core Independent Peripherals (CIPs), allow for sophisticated sensing and high-performance control. In addition, the CIPs enable interaction among the peripherals without the need for CPU involvement.

High-Current Inductor for Automotive Applications

Learn more:
we-online.com

Product Release
2024-07-25

Würth Elektronik offers WE-LHCA (Low Profile High Current Automotive Inductor) – a particularly flat and temperature-tough inductor in four sizes with different inductance values. The power inductors are designed for an extended temperature range of -55 to +155 °C and are constructed to avoid thermal degradation. The AEC-Q200-certified inductor is suitable for applications such as high-current power supplies, start-stop systems, power distribution modules, on-board chargers, infotainment or HVAC systems. The members of this inductor family are available in the following sizes: 7030 (L = 0.47 - 22 µH), 1040 (L = 1 - 68 µH), 1365 (L = 1 - 47 µH) and 1770 (L = 4.7 - 82 µH). These components feature a low-profile shielded construction with a distributed air gap in iron alloy powder.

Aluminum Polymer rectangular Capacitors for 48 V

Learn more:
rutronik.com

Product Release
2024-07-25

KEMET's aluminum polymer rectangular capacitors of the APL90 series are now available from Rutronik. The capacitors are AEC-Q200 qualified and are particularly suitable for meeting the requirements of 48 V vehicle applications and platforms. The APL90 series currently offers a capacitance of 1,100 µF, a rated voltage of 63 VDC, as well as 20 g vibration resistance and ripple current capability up to 26 A. An important area of application for the APL90 series is the automotive sector, e. g. as a DC link in 48 V inverters for mild hybrid electric vehicles (MHEVs). These capacitors are suited for use in data centers, e. g. as input capacitors in power supply units for 48 V systems. Suitable for use at operating temperatures from -55 °C to +125 °C, the component is shaped for efficient arrangement in modules and can be positioned both horizontally and vertically. Its lifetime is specified with 2,000 hours at +125 °C (with V_R and I_R applied).

Thermal Pads Protect EV Battery Packs

Learn more:
parker.com

Product Release
2024-07-25

The Chomerics Division of Parker Hannifin has introduced its THERM-A-GAP™ PAD 30 thermally conductive gap filler pads for EV battery packs that fits seamlessly into robotic assembly processes. THERM-A-GAP PAD 30 thermally conductive gap filler pads for EV battery pack applications are claimed to “provide exceptional performance and conformability”. During assembly, vision sensors can see THERM-A-GAP pads which enables effective quality control and fast production. The pads release directly from their liner for pick-and-place robots, making them well-suited for high-volume applications, and come in specially designed packaging to ensure safe shipment. The pads provide a soft (34 Shore 00) solution with 3.2 W/m-K of thermal conductivity and are claimed to offer low outgassing, ensuring an effective thermal interface between heat sinks and electronic devices where there are uneven surfaces, air gaps and rough surface textures. The supporting electrical properties of this RoHS-compliant thermal gap filler pad include: 5.9 kV_AC/mm dielectric strength (ASTM D149 test method), 10¹³ Ωcm volume resistivity (ASTM D257), 7.7 dielectric constant at 1,000 kHz (ASTM D150) and 0.001 dissipation factor at 1,000 kHz (Chomerics CHO-TM-TP13).

High Current Three Phase EMC Filter

Learn more:
emisglobal.com

Product Release
2024-07-25

The chassis mounting three phase EMC filter series MF423-3-3D-BB from EMIS is designed for higher current rating applications such as photovoltaic (PV) and power drive systems to meet relevant EMC Standards. Installed on the mains input side of equipment the filters improve conducted immunity and reliability. The devices are fitted with busbar termination. Other applications include inverters and converters, industrial three-phase systems and power supplies, large UPS, wind turbines, factory and building automation. Standard features include an operating voltage of 440/520 V_AC, a current rating of 300 A to 1000 A at 40°C, 50/60 Hz operating frequency within the operating temperature range between -25 °C and +85°C. The climatic category is 25/85/21.

High-Current eFuse with integrated Auto-Reset

Learn more:
nexperia.com

Product Release
2024-07-25

Nexperia announced the NPS3102A and NPS3102B electronic fuses (eFuses). These low-ohmic (17 mΩ), high current (13.5 A), resettable electronic fuses help to protect downstream loads from exposure to excessive voltages while also protecting power supplies from load faults and large inrush currents. They have been designed for use in various 12 V hot-swap applications including enterprise communication and storage equipment found in data centers such as drives, servers, ethernet switches and routers as well as to protect mobile communications infrastructure and industrial automation equipment like PLCs. The eFuses operate in the input voltage range up to 21 V. They are equipped with an integrated low-resistance pass MOSFET which minimizes voltage drop and power loss. The current clamp limit can be adjusted in the 2–13.5 A range using a resistor at the ILIM pin, which can also be used to measure load current in real time. Both devices include a built-in overvoltage clamp limiting the output voltage during an input overvoltage condition, with a 2 µs short-circuit protection response time. The pass-FET in the NPS3102A must be manually reset after a fault event whereas the NPS3102B integrates an auto-retry block, which safely attempts to re-enable the pass-FET without the need for user intervention.

4.5 kW Power Supply for AI GPU Racks

Learn more:
navitassemi.com

Product Release
2024-07-25

Navitas Semiconductor released its 4.5 kW AI data center power supply reference design, with GaNSafe™ and Gen-3 'Fast' (G3F) SiC power components. The design is claimed to "enable the world's highest power density with 137 W/in³ and over 97% efficiency". Next-generation AI GPUs like NVIDIA's Blackwell B100 and B200 each demand over 1 kW of power for high-power computation, 3x higher than traditional CPUs. These new demands are driving power-per-rack specifications from 30 - 40 kW up to 100 kW. The latest 4.5 kW CRPS185 design demonstrates how GaNSafe power ICs and GeneSiC™ Gen-3 'Fast' (G3F) MOSFETs enables highest power density and efficiency solution. At the heart of the design is an interleaved CCM totem-pole PFC using SiC with full-bridge LLC topology with GaN, where the fundamental strengths of each semiconductor technology are exploited for the highest frequency, coolest operation, optimized reliability and robustness, and highest power density and efficiency. The 650 V G3F SiC MOSFETs feature 'trench-assisted planar' technology which delivers "world-leading performance over temperature for the highest system efficiency and reliability in real-world applications". With a 3.2 kW power supply on the market Navitas plans to introduce an 8.5 kW design in September.

Second Generation of 1200V SiC MOSFET for High Performance Applications

Learn more:
powermastersemi.com

Product Release
2024-07-25

Power Master Semiconductor has released the 2nd generation of the 1200V e SiC MOSFET, which is intended for applications such as DC EV charging stations, solar inverters, energy storage systems, motor drives and industrial power supplies. The 1200 V devices are claimed to “offer e. g. higher power density, efficiency and less cooling effort due to its much lower power losses”. FOM characteristics such as gate charge (Q_G), stored energy in output capacitance (EOSS), reverse recovery charger (Q_RR) and output charge (Q_OSS) are improved by up to 30 % compared to previous generation. All devices are 100 % tested in terms of avalanche capability. Due to its lower miller capacitance (Q_GD) it achieved 44 % lower switching losses than the previous generation.

Supply Chain for Power Devices based on AlN established

Learn more:
iisb.fraunhofer.de

Industry News
2024-07-24

In order to make the ultra-wide band gap (UWBG) technology AlN accessible to industry in the medium term, the related existing activities in Germany have been combined in a strategic cluster. The aim is to establish a German value chain for AlN-based technology and to build up an international leadership position in this increasingly economically important field. The Ferdinand-Braun-Institut (FBH), the Fraunhofer Institute for Integrated Systems and Device Technology IISB and the company III/V-Reclaim PT GmbH drive this initiative together. They cover the entire value chain, starting with the growth of AlN crystals using the Physical Vapor Transport (PVT) process, to wafering and polishing of epi-ready AlN-wafers, and the epitaxy of the functional device layers, up to the fabrication of transistors for power electronics and millimeter-wave applications. For the first time, the consortium has now successfully demonstrated the practical implementation of a value chain for AlN devices in Germany and Europe. The first transistor generations produced with these wafers already show promising electrical properties, such as a breakdown voltage of up to 2200 V and a power density superior to SiC as well as GaN-based power-switching devices. Compared to established silicon devices, AlN/GaN HEMTs, as they have now been successfully produced on AlN wafers, offer up to three thousand times less conduction losses than with silicon and are around ten times more efficient than SiC transistors.

SEMICON Southeast Asia 2025 to be Held in Singapore

Learn more:
semiconsea.org

Event News
2024-07-24

SEMICON Southeast Asia will return to its roots in Singapore in 2025 to commemorate its 30th anniversary. With more than 18,000 delegates expected to attend from the region and around the world, SEMICON Southeast Asia has become a key platform for industry leaders, innovators, and decision-makers to connect, collaborate, and drive innovation. This special edition of the event will take place at Sands Expo & Convention Centre from 20 – 22 May 2025. Themed "Stronger Together", SEMICON Southeast Asia 2025 will feature insights into the latest industry developments, trends and innovations, and critical areas including sustainability, artificial intelligence (AI), chiplet technology, and workforce development. Since 2015, SEMICON Southeast Asia has been hosted in Malaysia, contributing significantly to the growth and advancement of the semiconductor industry in the region.

Varistor Series Offers Surge Current Protection up to 6,000 A

Learn more:
koaspeer.com

Product Release
2024-07-23

KOA Speer Electronics introduces the NV73S series multilayer type metal oxide varistor that handles a surge current of up to 6,000 A, which is five times higher than existing products. The multilayer construction can absorb a large surge. The two-way symmetries can absorb positive and negative surges. The NV73S replaces the NV732E (1210) through 2L (2220) due to its improved surge protection. Maximum peak current and sizes for the new NV73S are 400 to 800 A (1210), 500 to 1,200 A (1812), and 1,500 to 6,000 A (2220) with a working voltage range of 6 to 95 V (AC) and 9 to 127 V (DC). The varistor voltage range for the NV73S series is 12 to 150 V. The NV73S series metal oxide varistor offers protection from ESD and EMI. It also provides surge protection for motors, relays, and solenoid valves. It meets EU-RoHS requirements.

Supply Agreement: SiC MOSFETs for EVs

Learn more:
onsemi.com

Industry News
2024-07-22

onsemi has signed a multi-year deal with Volkswagen Group to be the primary supplier of a complete power box solution as part of its next-generation traction inverter for its Scalable Systems Platform (SSP). The solution features silicon carbide-based technologies in an integrated module that can scale across all power levels – from high power to low power traction inverters to be compatible for all vehicle categories. Based on the EliteSiC M3e MOSFETs, onsemi's power box solution is said to be able to handle more power in a smaller package which significantly reduces energy losses. The inclusion of three integrated half-bridge modules mounted on a cooling channel will further improve system efficiency by ensuring heat is effectively managed from the semiconductor to the coolant encasement. This leads to better performance, improved heat control, and increased efficiency, allowing EVs to drive further on a single charge.

SiC Modules for Power Grid Batteries

Learn more:
infineon.com

Industry News
2024-07-19

Infineon Technologies announced that its CoolSiC™ 2000 V modules have been selected by Daihen Corporation for their unit-type power conditioners for grid storage batteries. The unit-type power conditioner for grid storage batteries launched by Daihen earlier this year is the first product in the industry to achieve connection to storage batteries at a high DC link voltage of 1500 V. The higher voltage enables the product to be used with large-capacity storage battery facilities, which has resulted in a 40 percent reduction in the footprint of grid storage batteries compared to the conventional product. The higher power density is achieved by using Infineon's 62 mm CoolSiC MOSFET 2000 V module FF3MR20KM1H. In addition to the characteristics of SiC that enable high voltage, better thermal dissipation and high power density, Infineon's SiC products feature M1H trench technology that increases the gate drive voltage range and provides high robustness and reliability against gate voltage spikes.

150 V N-Channel Power U-MOS X-H MOSFETs

Learn more:
toshiba.semicon-storage.com

Product Release
2024-07-18

Toshiba Electronics Europe adds two 150 V N-channel power MOSFET products based upon their U-MOS X-H Trench process. The TPH1100CQ5 and TPH1400CQ5 devices are designed specifically for use in high-performance switching power supplies, such as those used in data centers and communication base stations as well as other industrial applications. With a maximum drain-source voltage (V_DSS) rating of 150 V and drain current (I_D) handling of 49 A (TPH1100CQ5) and 32A (TPH1400CQ5), the devices feature a maximum drain-source on-resistance (R_DS(ON)) of 11 mΩ and 14 mΩ, respectively. The reverse recovery charge (Qrr) of TPH1400CQ5 is 27 nC (typ.), and the typical reverse recovery time (trr) is 36 ns. Used in synchronous rectification applications, the TPH1400CQ5 reduces the power loss of switching power supplies and helps improve efficiency. When used in a circuit that operates in reverse recovery mode, the new products reduce spike voltages generated during switching, helping to improve EMI characteristics. The devices are housed in a surface-mount SOP Advance(N) package measuring 4.9 mm x 6.1 mm x 1.0 mm. A G0 SPICE model for rapid verification of the circuit function as well as highly accurate G2 SPICE models, for accurate reproduction of transient characteristics are also available.

Memorandum of Understanding to stimulate sustainable Action across the Supply Chain

Learn more:
infineon.com

Industry News
2024-07-18

Infineon Technologies has signed a Memorandum of Understanding with Amkor Technology, a provider of semiconductor packaging and test services, with a joint commitment to stimulate decarbonization and sustainability strategies across the supply chain. Expanding their partnership towards sustainability is the next step in the sustainability journey of both companies. Infineon and Amkor intend to fully leverage their classical Outsourced Semiconductor Assembly and Test (OSAT) business relationship in order to effectively tackle emissions along their supply chain. In April, both companies announced to operate a dedicated packaging and test center at Amkor's manufacturing site in Porto, Portugal. As part of the cooperation for climate protection, Infineon and Amkor will actively engage with common suppliers to help them develop and implement effective decarbonization strategies. This will involve workshops, meetings, and the sharing of best practices and learnings related to decarbonization. The aim is to identify areas for improvement and support suppliers in setting science-based emissions reduction targets in line with the Science Based Targets initiative. Both companies are committed to providing ongoing guidance, fostering exchange, and tracking progress to drive continuous improvement across the common supply chain.

PCIM Europe 2025: Call for Papers

Learn more:
pcim.com

Event News
2024-07-17

Starting now, experts from the realms of business and academia can submit their abstracts on a wide range of topics in power electronics for a chance to speak at the PCIM Conference 2025. This call for papers will be open until 15 October 2024. The PCIM Conference gives authors of first-time publications the opportunity to present their work to an international audience of more than 900 representatives from the business and scientific sides of power electronics. All those accepted will have their articles published in the PCIM Conference proceedings and databases like IEEE Xplore, IET Inspec Direct, Knovel, and Scopus. In addition, presenters at the PCIM Conference will benefit from the immediate feedback they receive from both the industry and the academic world – and they will be able to make a number of contacts in the power electronics community in the process. The PCIM Conference offers a several options to present: From 20-minute talks on the conference stages via poster presentations offering direct interaction directly with other attendees up to half-day seminars. This year's best submissions will be recognized in five categories by the Best Paper Award, the Young Engineer Award, and the Young Researcher Award.

Testing Procedure for Determining Dielectric Strength

Learn more:
we-online.com

Industry News
2024-07-17

Würth Elektronik has developed a testing procedure for determining the maximum operating voltage of molded inductors. The manufacturer of electronic and electromechanical components introduces developers to the electrical property of dielectric strength and what happens if it is exceeded in an application note. The molded inductors from the Power Magnetics product portfolio (e. g., WE-MAPI, WE-XHMI, WE-LHMI) are now successively supplemented with the value of the maximum operating voltage V_op as a new parameter in the specifications. Based on the testing procedure, Würth Elektronik defines the maximum operating voltage V_op in its data sheets. This represents the voltage at which an inductor can be operated continuously in the application without impairing performance, risking damage or overheating the inductor. The operating voltage is therefore a limit value for the input voltage, up to which the inductor can be used reliably in an application without irreversible damage. The test concept examines the behavior of inductors up to their voltage limits under realistic conditions in a DC/DC full-bridge converter (voltage transients of up to 60 V/ns and frequencies of up to 2 MHz). The approximate voltage limit is firstly evaluated using a short-term test. The operating voltage is then defined on this basis and verified in a long-term test.

Magnetic Packaging Technology for Power Modules: Cutting Size in half

Learn more:
ti.com

Product Release
2024-07-16

Texas Instruments (TI) introduced six power modules designed to improve power density, enhance efficiency and reduce EMI. These power modules leverage TI's proprietary MagPack™ integrated magnetic packaging technology, "shrinking their size by up to 23% compared to competing modules", enabling designers of industrial, enterprise and communications applications to achieve previously impossible performance levels. In fact, three of the six devices, the TPSM82866A, TPSM82866C and TPSM82816, are claimed to be "the industry's smallest 6 A power modules, supplying a power density of nearly 1A per 1 mm² of area". The magnetic packaging technology includes an integrated power inductor with proprietary, newly engineered material. As a result, engineers can now reduce temperature and radiated emissions while reducing both board space and system power losses. This is especially important in applications such as data centers, where electricity is the biggest cost factor, with some analysts predicting a 100% increase in demand for power by the end of the decade.

3-Phase Brushless Gate Driver with Power Module and Sleep Mode

Learn more:
microchip.com

Product Release
2024-07-15

Microchip has launched the MPC8027, a 3-phase brushless gate driver module with a typical sleep-mode current of 5 µA. MCP8027 integrates three half-bridge drivers to drive external NMOS/NMOS transistor pairs configured to drive a 3-phase BLDC motor, a comparator, a voltage regulator to provide bias to a companion microcontroller, power monitoring comparators, an overtemperature sensor, two level translators and three operational amplifiers for motor current monitoring. The MCP8027 buck converter is capable of delivering 750 mW of power - may be disabled if not used - for powering a companion microcontroller. The onboard 5 V and 12 V LDO regulators are capable of delivering 30 mA of current. The MCP8027 operation is specified over a temperature range of -40°C to +150°C. Package options include the 40-lead 5x5 QFN and 48-lead 7x7 TQFP. For 100 ms the transient voltage tolerance is 48 V. Thermal warning and shutdown are also integrated.

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125 V High-Side Gate Driver: Protection by Disconnecting	In battery-powered applications such as motor driv...	12144	Product Release	125 V High-Side Gate Driver: Protection by Disconnecting	In battery-powered applications such as motor drives and SMPS, the power supply architecture often requires that a module can be disconnected from the main supply rail when a fault occurs in that module. High-side disconnect switches (e. g. MOSFETs) can prevent a load short circuit from affecting the battery. Infineon Technologies has now introduced the EiceDRIVER™ 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault. The device is said to "provide fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities". The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package and includes overcurrent protection, adjustable current setting threshold, time delay and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions. The 1EDL8011 has a operating voltage range of 8 V to 125 V and a gate sinking current of up to 1 A, while the off-mode quiescent current is 1 µA.	10.10.2024 12:30:00	Oct	news_2024-10-15_15.jpg	\images\news_2024-10-15_15.jpg	https://www.infineon.com/cms/en/product/power/gate-driver-ics/high-side-drivers/1edl8011/	infineon.com
BMS Solutions based on 100 V Bi-directional GaN Technology	Innoscience Technology has launched another genera...	12140	Product Release	BMS Solutions based on 100 V Bi-directional GaN Technology	Innoscience Technology has launched another generation of battery management system (BMS) solutions based on VGaN™ technology. With no parasitic body diode and bidirectional control, one single bi-directional (VGaN) device from Innoscience is claimed to be able to "effectively replace two traditional MOS Silicon pairs". The VGaN series brings these features to Over Voltage Protection (OVP) and BMS applications. A 48 V/180 A BMS demo is the latest Innoscience design solution to support a high-side same-port BMS application. This design adopts the company's latest 100 V VGaN product, the INV100FQ030A, which is packaged in a 4 mm x 6 mm² FCQFN and offers a maximum on-resistance of 3.2 mΩ. No heat sink is required with a maximum temperature rise of less than 50°C. The 16-string charging and discharging battery protection system uses the controllable bidirectional conduction and cut-off features of VGaN, enabling four operational states: normal charging and discharging, charging protection, discharging protection, and sleep mode. With 16 VGaNs it is said to be possible to replace 18 pairs of Silicon MOSFETs (36 in total). This 48 V/18 0A high-side BMS solution is suited for home batteries, portable charging station, e-scooters, e-bikes etc., optimizing battery life and safety through efficient charge and discharge control. It reduces temperature rise and system costs while ensuring a compact, portable design.	10.10.2024 08:30:00	Oct	news_2024-10-15_11.jpg	\images\news_2024-10-15_11.jpg	https://www.innoscience.com/site/product?el=b1	innoscience.com
Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection	Littlefuse announced the SMFA Asymmetrical Series ...	12145	Product Release	Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection	Littlefuse announced the SMFA Asymmetrical Series Surface-Mount TVS Diode, which is claimed to be "the first-to-market asymmetrical TVS solution specifically designed to protect Silicon Carbide MOSFET gates from overvoltage events. The SMFA Asymmetrical Series is engineered specifically for the unique gate protection requirements of SiC MOSFETs. Unlike traditional solutions that require multiple Zener or TVS diodes, the SMFA Series protects against ringing and overshoot phenomena in gate drive circuits using a single component. The devices are suited for AI and data center power supplies, EV infrastructure power system and industrial equipment power supplies.	08.10.2024 13:30:00	Oct	news_2024-10-15_16.jpg	\images\news_2024-10-15_16.jpg	https://www.littelfuse.com/about-us/news/news-releases/2024/littelfuse-unveils-industrys-first-asymmetrical-tvs-diode-series-for-sic-mosfet-gate-protection.aspx	littelfuse.com
High Frequency GaN Inverter Demonstrator for Automotive	QPT wins a grant for a new Project called VERDE to...	12136	Industry News	High Frequency GaN Inverter Demonstrator for Automotive	QPT wins a grant for a new Project called VERDE to develop a high frequency, 400V/60kW GaN inverter demonstrator for automotive use that will help demonstrate that GaN is now superior to SiC or Silicon. This is funded by the UK's Advanced Propulsion Centre (APC) and is designed to help accelerate early-stage technologies to market that will support the shift to net-zero automotive. The other company in the APC Project is RAM Innovations Ltd. This demonstrator features high frequency switching up to 1MHz to enable dramatic savings in waste, weight and power costs in the drive system. Key to this is QPT's pure sign wave output that reduces harshness, noise, and vibration to improve reliability and reduce power consumption. The traction inverter market for EVs was estimated at $17.93bn in 2023 and is projected to reach around $73.08bn by 2032, a CAGR of 16.90% according to Precedence Research. Currently half of the world's electricity is used by electric motors: QPT's technology could reduce their electricity use by 10% which would be a significant reduction in CO<sub>2</sub> production.	08.10.2024 12:00:00	Oct	news_2024-10-15_7.jpg	\images\news_2024-10-15_7.jpg	https://www.q-p-t.com/press-releases/qpt-wins-grant-for-apc-project-to-develop-for-high-frequency-gan-inverter-demonstrator-for-automotive	q-p-t.com
Finalists are Selected for PSMA's Inaugural Global Energy Efficiency Award	PSMA announces the selection of finalists under co...	12137	Industry News	Finalists are Selected for PSMA's Inaugural Global Energy Efficiency Award	PSMA announces the selection of finalists under consideration for its prestigious "Global Energy Efficiency Award." The award will be presented to the winner during next year's Applied Power Electronics Conference (APEC) in Atlanta, March 16-20, 2025, as part of PSMA's 40<sup>th</sup> anniversary celebration. The award highlights PSMA's long-standing tradition of supporting companies making critical energy efficiency improvements to reduce global climate change. Three "Global Energy Efficiency Award" finalists were announced on Energy Efficiency Day, Oct. 2<sup>nd</sup>. Beyond energy conservation, the judging panel evaluated the finalists based on their total potential impact on the power electronics industry, whether through volume shipments or by social outcomes.	08.10.2024 12:00:00	Oct	news_2024-10-15_8.png	\images\news_2024-10-15_8.png	https://www.psma.com/	psma.com
Silicon Capacitor Production Line opened in France	Murata Manufacturing has opened production line fo...	12132	Industry News	Silicon Capacitor Production Line opened in France	Murata Manufacturing has opened production line for silicon capacitors at its site in Caen, France. Manufactured on a 200-mm mass production line the silicon capacitors can be used in demanding applications such as implantable medical systems, telecommunication infrastructures, and mobile phones. The products produced in the 200-mm line will primarily target the mobile handset market by delivering capacitors in extremely compact sizes, with thicknesses as low as 50 µm.	04.10.2024 08:00:00	Oct	news_2024-10-15_3.jpg	\images\news_2024-10-15_3.jpg	https://corporate.murata.com/en-eu/newsroom/news/company/general/2024/1011	murata.com
Shaping the Future of Heat Control Solutions	Thermal Management Expo Europe is taking place in ...	12130	Event News	Shaping the Future of Heat Control Solutions	Thermal Management Expo Europe is taking place in Stuttgart, Germany, from 3-5 December 2024. This is a unique opportunity to explore cutting-edge thermal management technologies, materials, and solutions critical to today's fast-evolving industries, from automotive and electronics to energy and aerospace. This year's expo will feature innovative products and solutions for heat dissipation, cooling, and temperature regulation, as well as live demonstrations of breakthrough thermal technologies. Network with industry leaders at the receptions and attend the free conference where technical experts will tackle the latest advancements in thermal management materials and strategies. Find out more and register for your free pass at	01.10.2024 06:00:00	Oct	news_2024-10-15_1.jpg	\images\news_2024-10-15_1.jpg	https://www.thermalmanagementexpo-europe.com/?utm_source=bodos_power_systems&utm_campaign=TEE24_Partners	thermalmanagementexpo-europe.com
Current Sensors for Use in DAQ Systems with integrated Burdon Transistor	Available from Danisense is a range of current tra...	12141	Product Release	Current Sensors for Use in DAQ Systems with integrated Burdon Transistor	Available from Danisense is a range of current transducers with voltage output, designed to streamline the workflow for engineers utilizing data acquisition (DAQ) systems. These devices integrate the burden resistor directly into the current transducer, mitigating the risk of miscalculations. The DS, DM and DL series current transducers with voltage output from Danisense offer users options for precise measurements of AC and DC currents from 55 A up to 3000 A. The products are well-suited for a wide range of applications, particularly in harsh environments and high-temperature settings such as e-mobility, solar, and wind energy sectors. They offer a 1 V or 10 V BNC voltage output connection, an aperture of up to 68 mm) and very low linearity errors. All products are housed in full aluminum casings and incorporate the Fluxgate technology. For data acquisition users usually employ a variety of instruments, extending beyond traditional oscilloscopes. These instruments often lack a direct current sensor. Consequently, when users require a precision current sensor, they must also use a burden resistor to facilitate the connection. However, this often poses a significant challenge: users need to align the specifications of the current sensor with those of the burden resistor. The complexity of these specifications leaves considerable room for error.	30.09.2024 09:30:00	Sep	news_2024-10-15_12.jpg	\images\news_2024-10-15_12.jpg	https://danisense.com/	danisense.com
Power Semiconductors now supplied from 12-inch Wafers	Mitsubishi Electric Corporation announced that its...	12131	Industry News	Power Semiconductors now supplied from 12-inch Wafers	Mitsubishi Electric Corporation announced that its Power Device Works' Fukuyama Factory has begun large-scale supply of power semiconductor chips made from 12-inch silicon wafers for the assembly of semiconductor modules. The Si power semiconductor modules will initially be used in consumer products. Going forward, Mitsubishi Electric expects to contribute to green transformation by providing a stable and timely supply of semiconductor chips to meet the growing demand for energy-saving power electronics devices in various applications. The Fukuyama Factory is playing a key role in Mitsubishi Electric's medium-term plan to double its wafer processing capacity for Si power semiconductors by fiscal year 2026 compared to five years earlier. The factory operates on a total floor area of approximately 46,500m² on three floors.	30.09.2024 07:00:00	Sep	news_2024-10-15_2.jpg	\images\news_2024-10-15_2.jpg	https://www.mitsubishielectric.com/news/2024/0930.html?cid=rss	mitsubishielectric.com
Current-compensated Chokes for Vertical PCB Mounting	Schurter is launching a vertically mountable choke...	12147	Product Release	Current-compensated Chokes for Vertical PCB Mounting	Schurter is launching a vertically mountable choke family for PCBs with nanocrystalline cores and "very high inductances". Due to the compact dimensions, the integration of the filter elements on printed circuit boards is an ideal solution. The DKCV-1 choke series is particularly suitable for applications that require high attenuation. Due to the vertical choke arrangement, they also require little space on the PCB. All variants of the DKCV-1 family have the same footprint on the PCB. The chokes are suited for applications like switching power supplies, industrial, medical, laboratory and test equipment. The chokes are designed for currents up to 10 A and voltages up to 300 V<sub>AC</sub> or 450 V<sub>DC</sub> and have ENEC, cUR and UR approvals. For higher power applications, the DKIV-1 series of chokes is available with rated currents up to 50 A.	27.09.2024 15:30:00	Sep	news_2024-10-15_18.jpg	\images\news_2024-10-15_18.jpg	https://www.schurter.com/en/datasheet/DKCV-1	schurter.com
MLCCs with Voltage Rating up to 2000 V	Samsung Electro-Mechanics is releasing a range of ...	12142	Product Release	MLCCs with Voltage Rating up to 2000 V	Samsung Electro-Mechanics is releasing a range of MLCCs (multi-layer ceramic capacitors) that meet growing demand for high rated voltage solutions within the electric vehicle industry. These 1812 inch (4.5 mm x 3.2 mm) X7R MLCCs are availble with capacitances in the range of 2.2 nF to 470 nF with a voltage rating up to 2000 V<sub>DC</sub>. These MLCCs comply with AEC-Q200, the global standard for stress resistance that all passive electronic components must meet for use within the automotive industry. Suitable for use in operating temperatures up to 125 °C, all of the new MLCCs from Samsung Electro-Mechanics offer RoHS and REACH compliance.	26.09.2024 10:30:00	Sep	news_2024-10-15_13.jpg	\images\news_2024-10-15_13.jpg	https://www.samsungsem.com/global/product/passive-component/mlcc.do	samsungsem.com
DC EMC Filter for High Power EV Charging Applications	EMIS announces the availability of the MF620 DC EM...	12139	Product Release	DC EMC Filter for High Power EV Charging Applications	EMIS announces the availability of the MF620 DC EMI Filter range specially designed for high power electric vehicle charging applications. The DC EMI filters suppress undesirable electrical disturbances in power lines, specifically for EV DC fast charging. The MF620 filter range addressing both common mode and differential mode interference meets the safety requirements of IEC/EN 61851-23 Electric Vehicle Conductive Charging System and UL 2202 Electric Vehicle Charging System Equipment. This high current dual-stage DC EMI/EMC filter series is intended to operate up to 1600 V<sub>DC</sub> at current ratings of 150 A to 1600 A with the option to select the parallel capacitors. Designed with specific capacitance and inductance values to target unwanted frequencies and in addition to EV Charging the filters may be used for Industrial Automation, Renewable Energy Systems, Telecommunication Equipment and Power Supplies.	26.09.2024 07:30:00	Sep	news_2024-10-15_10.jpg	\images\news_2024-10-15_10.jpg	https://emisglobal.com/products/emi-filters/dc-filter/mf-620/	emisglobal.com
Ideal Diode Protection Switch with LPS for USB-C Applications	Alpha and Omega Semiconductor released its AOZ1390...	12143	Product Release	Ideal Diode Protection Switch with LPS for USB-C Applications	Alpha and Omega Semiconductor released its AOZ1390DI-01 and AOZ1390DI-02 ideal diode protection switches. The devices are well-suited for multi-port Type-C PD 3.0 current sinking applications up to 100 W, such as high-performance laptops, personal computers, monitors, docking, and other Type-C port applications. Designed to enhance USB Type-C efficiency and safety, the AOZ1390DI features Limited Power Source (LPS) functionality. For multi-port ORing or parallel power applications, the LPSB pin of the AOZ1390DI can be connected to the DISB pin of one or more AOZ1390DI devices at other ports. This LPS feature works as a watchdog, disabling the port when another port in the same system is faulty or damaged. In doing so it prevents excessive power flow through the device from other faulty or damaged ports, making the AOZ1390 suitable for multi-port Type-C Power Delivery (PD) applications. The integrated back-to-back MOSFET is claimed to deliver "the industry's lowest ON resistance (18 mΩ typical) and highest SOA to safely handle high currents and a wide range of output capacitances on V<sub>OUT</sub>". The input operating voltage range of the AOZ1390DI is between 3.3 V and 23 V, and both V<sub>IN</sub> and V<sub>OUT</sub> terminals are rated at 30 V absolute maximum with the capability to support up to 8 A switch current.	25.09.2024 11:30:00	Sep	news_2024-10-15_14.jpg	\images\news_2024-10-15_14.jpg	https://www.aosmd.com/news/aos-introduces-ideal-diode-protection-switch-limited-power-source-lps-feature-safeguard	aosmd.com
1200 V SiC Schottky Barrier Diodes	Toshiba expanded its silicon carbide diode portfol...	12123	Product Release	1200 V SiC Schottky Barrier Diodes	Toshiba expanded its silicon carbide diode portfolio with ten 1200 V Schottky barrier diodes (SBDs). The TRSxxx120Hx series, comprising five products housed in TO-247-2L packages and five in TO-247 packages, helps designers improve the efficiency of industrial equipment, including photovoltaic (PV) inverters, electric vehicle (EV) charging stations, and switching power supplies. By implementing an enhanced junction barrier Schottky (JBS) structure, the TRSxxx120Hx series allows a forward voltage (V<sub>F</sub>) of 1.27 V (typ). The merged PiN-Schottky incorporated into a JBS structure reduces diode losses under high current conditions. The TRS40N120H of the new series accepts a forward DC current (I<sub>F(DC)</sub>) of 40 A (max) and a maximum non-repetitive peak forward surge current (I<sub>FSM</sub>) of 270 A, with the maximum case temperature (T<sub>C</sub>) of all devices being +175 °C. Combined with the lower capacitive charge and leakage current, the products help improve system efficiency and simplify thermal design. For instance, at a reverse voltage (V<sub>R</sub>) of 1200 V, the TRS20H120H diode housed in the TO-247-2L package provides a total capacitive charge (Q<sub>C</sub>) of 109 nC and reverse current (I<sub>R</sub>) of 2 µA.	25.09.2024 09:30:00	Sep	news_2024-10-01_14.jpg	\images\news_2024-10-01_14.jpg	https://toshiba.semicon-storage.com/ap-en/semiconductor/product/diodes/sic-schottky-barrier-diodes/articles/3rd-generation-sic-schottky-barrier-diode.html	toshiba.semicon-storage.com
Meeting future Energy Demands	TTI IP&E – Europe is supplying Mean Well power com...	12117	Industry News	Meeting future Energy Demands	TTI IP&E – Europe is supplying Mean Well power components, including the very latest DHP-1UT-B(HV) mounting rack power shelf, to support electronics engineers designing and building the next generation of renewable and hydrogen energy systems. "EU Environmental regulations require 45% of Europe's energy generation to come from renewable sources by 2030," says Markus Lorenz, Director Industry Marketing, Industrial, TTI Europe. "To achieve this, green energy generated from wind turbines and solar panels must be stored efficiently. Hydrogen is also expected to play a major part in the transition towards a more sustainable future as using hydrogen power is the most efficient way to transport and store energy with higher density and over a longer time frame without losses." The Mean Well DHP-1UT-B(HV) mounting rack power shelf for standard 19" cabinets enables a reliable power supply in a modular design and is ideal for applications including electrolysis, distributed power architecture and EV charging stations.	24.09.2024 13:00:00	Sep	news_2024-10-01_8.jpg	\images\news_2024-10-01_8.jpg	https://www.ttieurope.com/content/ttieurope/en/about-tti/news-center/corporate-news/press-releases/2024/september/pr-09242024-tti-europe-stock-means-power-shelf-will-support-future-energy-demands.html	ttieurope.com
4th Generation of SiC MOSFETs for up to 1200 V	STMicroelectronics has introduced its fourth gener...	12124	Product Release	4th Generation of SiC MOSFETs for up to 1200 V	STMicroelectronics has introduced its fourth generation STPOWER silicon carbide MOSFET technology. While serving the needs of both the automotive and industrial markets, the technology is particularly optimized for traction inverters. These SiC MOSFET devices, which will be made available in 750 V and 1200 V classes, are said to "improve energy efficiency and performance of both 400 V and 800 V EV bus traction inverters, bringing the advantages of SiC to mid-size and compact EVs". The new generation SiC technology is also suitable for a variety of high-power industrial applications, including solar inverters, energy storage solutions and datacenters, significantly improving energy efficiency for these growing applications. Qualification of the 750 V class of the fourth generation SiC technology platform is already completed, and ST expects to complete qualification of the 1200 V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750 V and 1200 V will follow, allowing designers to address applications operating from standard AC-line voltages up to high-voltage EV batteries and chargers. The average die size of Generation 4 devices is 12-15% smaller than that of Generation 3, considering an R<sub>DS(on)</sub> at 25 °C.	24.09.2024 10:30:00	Sep	news_2024-10-01_15.jpg	\images\news_2024-10-01_15.jpg	https://www.st.com/en/power-transistors/stpower-sic-mosfets.html	st.com
Module Provider supports local Sports Team	Vincotech has extended its fruitful cooperation wi...	12112	Industry News	Module Provider supports local Sports Team	Vincotech has extended its fruitful cooperation with TSV Haching München into the upcoming season. The company has been a main sponsor and an active supporter of the club for two years now. Vincotech's backing for the local volleyball team echoes the company's philosophy. Committed to nurturing its ties to the community and championing the spirit of partnership at work and at play, Vincotech company sees its values reflected in this sport and in the aspirations of TSV Haching München's team of young international athletes.	24.09.2024 08:00:00	Sep	news_2024-10-01_3.jpg	\images\news_2024-10-01_3.jpg	https://www.vincotech.com/news/company-news/article/vincotech-sponsors-tsv-haching-for-the-third-year-running.html	vincotech.com
Research: Isolating Piezoelectric DC/DC Converters Without Transformers	Building on its earlier breakthroughs introducing ...	12111	Industry News	Research: Isolating Piezoelectric DC/DC Converters Without Transformers	Building on its earlier breakthroughs introducing a new way of converting electrical power using piezoelectric resonators and developing a dual-bridge piezoelectric resonator converter, the technology research institute CEA-Leti has paved the way to isolating piezoelectric converters without transformers. The topology of dual-bridge isolated piezoelectric resonator converter (DB-IPRC) provides isolation using two independent piezoelectric resonators. The improved version of the DC/DC converter significantly improves efficiency, while maintaining the converter isolation principle. The results were reported in a paper, noting that "for a 200 V to 120 V conversion, the converter shows an efficiency of 96.2% with the inductive assisting circuit, 94.3% with the piezoelectric one and 87.4% without any assisting circuit. The (piezoelectric resonator) assisting circuit offers a gain in efficiency over a smaller operating range than the inductance, but leads to a flatter converter." According to CEA-Leti the use of piezoelectric resonators instead of inductors in power conversion "will lead to a dramatic reduction in the size of power converters." The research facility claims that the "results make it possible to extend this type of compact conversion to isolated converters." So this type of converter is said to be now compatible with a much wider range of applications, such as TVs, phones, tablets and electrical tools. The technology research institute says that in power conversion, piezoelectrics operate at high frequencies, greater than 100 kHz, "with no limits in terms of input power" enabling it to reach power levels of several hundred watts. The range of applications is therefore expected to be very broad, with most converters having a rated power of less than 100 W.	24.09.2024 07:00:00	Sep	news_2024-10-01_2.jpg	\images\news_2024-10-01_2.jpg	https://www.cea.fr/english	cea.fr
Medical Power Supplies meet CF Requirements	Advanced Energy has developed the NCF150 series of...	12127	Product Release	Medical Power Supplies meet CF Requirements	Advanced Energy has developed the NCF150 series of high-isolation, low-leakage current AC/DC power supplies that enable medical equipment designers to meet the cardiac floating (CF) requirements of the IEC 60601-1 medical safety standard using off-the-shelf products. Type CF is the most stringent medical electrical safety classification and is essential for medical products that may come in direct contact with the heart, including dialysis machines, cardiac-related systems and platforms for electrosurgery. The SL NCF150 series delivers a maximum output power of up to 150 W and offers voltages of 12 V, 15 V, 19 V, 24 V and 48 V. An optional 5 V standby and 12 V fan output are also available. All units in the SL NCF150 series have a patient leakage current below 10 µA, feature EMI Class B, 2 MOPP isolation and 5 kV defibrillator pulse withstand capabilities. SL NCF150 power supplies accept a universal input of 85 to 264 V<sub>AC</sub>, operate with a full-load efficiency greater than 90% and feature protection against overvoltage, overload, overtemperature and short-circuit conditions as standard. This is the first release of the CF rated family and will be followed by higher power models launching soon.	23.09.2024 13:30:00	Sep	news_2024-10-01_18.jpg	\images\news_2024-10-01_18.jpg	https://www.advancedenergy.com/en-us/products/ac-dc-power-supply-units/open-frame-low-power-psus/cf-rated-products/ncf150/	advancedenergy.com
Working together for Biodiversity with Electronics and AI	"How can we counteract the decline in biodiversity...	12133	Industry News	Working together for Biodiversity with Electronics and AI	"How can we counteract the decline in biodiversity?" This question was discussed extensively at DLD Nature, which took place in September in Munich, Germany. At the conference and for the first time, Würth Elektronik presented in the tech talk with new cooperation partner, Hula Earth, a deep-tech start-up that specializes in the real-time monitoring of biodiversity. Their presentation was titled "Electronics for Innovation in Nature Protection." For real-time measurement, Hula Earth uses solar-powered BioT sensors that continuously collect various biodiversity-relevant data and transmit it via a wireless network. This also works in remote forest areas. The results are combined with satellite data, analyzed using artificial intelligence, and integrated into a user-friendly platform. Würth Elektronik and Hula Earth are now working together to optimize the handmade prototypes of the BioT sensors so that they can be produced efficiently in large quantities. Würth Elektronik is supporting the startup in a variety of ways including support in terms of EMC safety, energy management, functionality, scalability, and energy efficiency as well as prototyping and testing. Additionally, Würth Elektronik provides design-in support, including for circuit board design, interface planning, and the communication software.	20.09.2024 09:00:00	Sep	news_2024-10-15_4.jpg	\images\news_2024-10-15_4.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=DLD-nature-2024	we-online.com
Hall-Effect Dual Latch Sensor	Melexis adds the MLX92253 to its Hall-effect dual ...	12146	Product Release	Hall-Effect Dual Latch Sensor	Melexis adds the MLX92253 to its Hall-effect dual latch portfolio. This sensor offers two independent signal tracks for minimal jitter as well as consistent 90° phase shift regardless of magnet pole pitch. This enables accurate speed & direction ECU calculation as well as direct transfer across multiple platforms. It is suited for DC motors and encoders used in a wide range of embedded applications, including automotive, alternative mobility, consumer and industrial. The MLX92253 distinguishes itself by featuring two hall plates, one Z axis and one X axis, with two independent signal tracks. It also has a common magnetic center, which ensures a consistent 90° phase shift (quadrature) between the two speed outputs, independent of the magnet pole pitch. It features a chopping frequency of 500 kHz, an operating voltage range from 2.7 V to 5.5 V, a working temperature of -40 °C to 150 °C and an output state feedback during start-up, which can be utilized to convert the two outputs into inputs during start-up. This allows a microcontroller to retrieve the previous state of the MLX92253 before power-down, ensuring that no movement is missed. The device is available in a TSOT23 package and on request as engineering samples in a VA package.	19.09.2024 14:30:00	Sep	news_2024-10-15_17.jpg	\images\news_2024-10-15_17.jpg	https://www.melexis.com/en/product/MLX92253/4-wire-3D-Triaxis-dual-latch-switch-low-voltage	melexis.com
Research: Lithium-Metal Battery with Solid Electrolyte achieves 1070 Wh/L	As the coordinator of the H2020 SOLiDIFY consortiu...	12116	Industry News	Research: Lithium-Metal Battery with Solid Electrolyte achieves 1070 Wh/L	As the coordinator of the H2020 SOLiDIFY consortium, imec, together with 13 European partners, announces the development of a high-performance lithium-metal solid-state battery. The prototype battery pouch cell, manufactured by imec in the battery assembly lab at EnergyVille, Belgium, features a unique "liquid-to-solid" processed solid electrolyte, jointly developed by imec and the partners. It boasts an energy density of 1070 Wh/L, compared to 800 Wh/L for state-of-the art lithium-ion batteries. The manufacturing process, which is said to be cost less than €150 per kWh while being adaptable to existing lithium-ion battery production lines, paves the way for commercially viable solid lithium batteries for electromobility. The high energy density was achieved by combining a high-capacity composite cathode, separated from a thin lithium metal anode by a thin solid electrolyte separator (50 µm), which resulted in a compact battery cell stack. In addition, the consortium overcame mechanical strength and cathode impregnation challenges to increase the cell's charge rate to 3 hours and lifetime to 100 cycles. Compared to liquid electrolytes, the thermally stable solid cell had a reduced flammability, improving safety. The application of nanometer-thin protective coatings enabled the use of cobalt-lean NMC cathodes, reducing environmental impact while providing higher capacity. Next steps include further upscaling of this high-performance battery technology.	19.09.2024 12:00:00	Sep	news_2024-10-01_7.jpg	\images\news_2024-10-01_7.jpg	https://solidify-h2020.eu/	solidify-h2020.eu
N-Channel MOSFETs for 40 – 100 V	ROHM has released N-channel MOSFETs – RF9x120BKFRA...	12125	Product Release	N-Channel MOSFETs for 40 – 100 V	ROHM has released N-channel MOSFETs – RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB – featuring ON-resistances that are suited for several automotive applications, including motors for doors and seat positioning, as well as LED headlights. Offered in voltage ratings of 40 V, 60 V, and 100 V, the new products incorporate a split-gate structure to achieve low ON-resistance. All models are qualified under the AEC-Q101 automotive reliability standard. Design engineers can select from among three package types, depending on the application. For space-constrained sets like ADAS, the compact DFN2020Y7LSAA (2.0 mm × 2.0 mm) and HSMT8AG (3.3 mm × 3.3 mm) packages fit well. For automotive power applications, the widely used TO-252 (DPAK) package (6.6 mm × 10.0 mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package. P-channel products are also scheduled for future release.	19.09.2024 11:30:00	Sep	news_2024-10-01_16.jpg	\images\news_2024-10-01_16.jpg	https://www.rohm.com/news-detail?news-title=2024-09-19_news_mosfet&defaultGroupId=false	rohm.com
Design and Service Center in the Greater Boston Area	Advanced Energy has opened a design and service ce...	12114	Industry News	Design and Service Center in the Greater Boston Area	Advanced Energy has opened a design and service center in Wilmington, MA. The facility will focus on the development of advanced power technologies for semiconductor, industrial and medical applications. Combining laboratory and office space, the center will be the workspace for up to 50 employees. It supports AE's rapid growth strategy by enabling the launch of leading technology platforms, reducing time-to-market for new products, and ensuring smooth transitions to high-volume manufacturing. The design and service center features labs as well as office space with a gym and cafeteria. It is located near top schools like MIT and Northeastern.	19.09.2024 10:00:00	Sep	news_2024-10-01_5.jpg	\images\news_2024-10-01_5.jpg	https://ir.advancedenergy.com/news/advanced-energy-opens-design-and-service-center-in-the-greater-boston-area/bfab5c16-eaad-45be-998e-7e947578dda9/	advancedenergy.com
Insights into Design Challenges of Motor Control	Mouser Electronics announces an eBook offering a d...	12134	Industry News	Insights into Design Challenges of Motor Control	Mouser Electronics announces an eBook offering a deep dive into motor control, and with the push to achieve a more sustainable future, the challenge is to maximize efficiency while striking a balance with costs. In the eBook dubbed "Mastering Motor Control Design" Mouser offers electrical design engineers of all levels of experience practical information on system parameters and product selection. Topics include selecting the correct type of motor for the application, driver and microcontroller options, motor power components, motor isolation and current sensing, and more. The eBook also includes convenient links to select motor control products.	19.09.2024 10:00:00	Sep	news_2024-10-15_5.jpg	\images\news_2024-10-15_5.jpg	https://resources.mouser.com/explore-all/mastering-motor-control-design-guide	mouser.com
US Funding for WBG Power Projects	The White House and U.S. Department of Defense ann...	12110	Industry News	US Funding for WBG Power Projects	The White House and U.S. Department of Defense announced the first year of funding, totaling $19 million, for four additional projects for the Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Microelectronics Commons Hub, headed by North Carolina State University. The first of the four selected projects is "High Permittivity Dielectrics to Increase the Performance of III-Nitride Transistors" and led by NC State. It will increase the efficiency and radiation hardness of advanced transistors used in avionics and satellite applications. Partners include MACOM, EPC Space, Lockheed Martin, University of Florida, NASA and Sandia National Laboratories. The second project is named "Transition Readiness for NITride Rf Overmatch (T/R NITRO)" and led by MACOM. It will deliver advance prototypes of high frequency transistors and circuits for use in electronic warfare, radars, and 5G/6G telecommunications. The partners include NC State, Adroit Materials and the Naval Research Laboratory. The third project is about "Advanced High Voltage Silicon Carbide Switches". Led by GE Aerospace it will push the development of 6.5 to 10 kV planar field-effect transistors (FETs) into a low-volume production environment and develop 6.5 to 10 kV Superjunction (SJ) devices. The partners include Coherent, NC State, Stony Brook University, University at Albany, Naval Research Laboratory, DEVCOM and N.C. A&T State University. The fourth project covers "Advanced Power Switches Using UWBG Gallium Oxide". Led by Kyma Technologies it will advance the state-of-the-art in gallium oxide high voltage switching devices by producing power diodes and power transistors capable of blocking up to 10 kV, and make available the epilayers, devices, and composite substrates to the DoD and community at large through the CLAWS hub. The partners include NC State, University of California at Santa Barbara, Modern Microsystems, the Air Force Research Laboratory, Naval Research Laboratory and GE Aerospace.	19.09.2024 06:00:00	Sep	news_2024-10-01_1.jpg	\images\news_2024-10-01_1.jpg	https://news.ncsu.edu/2024/09/claws-hub-to-lead-leap-ahead-projects/	ncsu.edu
Strategic Alliance regarding Semiconductor Ecosystem in India	Tata Group and Analog Devices announced a strategi...	12119	Industry News	Strategic Alliance regarding Semiconductor Ecosystem in India	Tata Group and Analog Devices announced a strategic alliance to explore potential cooperative manufacturing opportunities. Tata Electronics, Tata Motors, and Tejas Networks signed a Memorandum of Understanding (MoU) with ADI to enhance strategic and business cooperation, explore opportunities for semiconductor manufacturing in India, and use ADI's products in Tata applications like electric vehicles and network infrastructure. The companies also agree to have strategic roadmap alignment discussions. As previously announced, Tata Electronics is investing in its own facilities by building India's first fab in Dholera, Gujarat with a total investment of $11 billion. In addition, Tata Electronics will be investing another $3 billion in a greenfield facility in Jagiroad, Assam for the assembly and testing of semiconductor chips. Tata Electronics and ADI intend to explore opportunities to manufacture ADI's products in Tata Electronics' fab in Gujarat and OSAT in Assam. Tata Motors and ADI intend to explore opportunities for engagement in electronics hardware components for energy storage solutions and power electronics in both commercial and passenger vehicle businesses. Tejas Networks and ADI intend to explore opportunities for engagement in electronics hardware components for network infrastructure.	18.09.2024 15:00:00	Sep	news_2024-10-01_10.jpg	\images\news_2024-10-01_10.jpg	https://www.analog.com/en/newsroom/press-releases/2024/9-18-2024-tata-adi-announce-strategic-alliance-explore-joint-opportunities.html	analog.com
Office in the heart of Southeast Asia	In August Würth Elektronik eiSos opened its first ...	12113	Industry News	Office in the heart of Southeast Asia	In August Würth Elektronik eiSos opened its first Thai branch office - in the Rama 9 business center in Bangkok. The company says that this gives the up-and-coming Asian business a secure base and new impetus for growth. Würth Elektronik eiSos points out that the location in the heart of the vibrant business district has excellent public transport connections. Würth Elektronik's corporate history in Thailand began back in 2006 - with the support of the Würth Elektronik eiSos team in Singapore. The first Field Sales Engineer was then hired in September 2010. The Thailand business developed extremely positively. Under the leadership of Regional Sales Manager Chantwut Zukzwang, General Manager Sebastian Tan and thirteen employees are now driving Würth Elektronik's Thailand business forward. The new location can already rely on a stable sales base that also includes major EMS customers.	18.09.2024 09:00:00	Sep	news_2024-10-01_4.jpg	\images\news_2024-10-01_4.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=thailand-opening	we-online.com
Silicon Valley Design and Innovation Centre	XP Power has opened the Silicon Valley Innovation ...	12118	Industry News	Silicon Valley Design and Innovation Centre	XP Power has opened the Silicon Valley Innovation Centre (SVIC) as its new North America Headquarters in San Jose, CA. This 85,000-square-foot facility integrates research and technology development, design engineering, pilot manufacturing, warehousing logistics, and service/support under one roof. The Innovation Centre facilitates rapid development cycles, allowing the company to deliver solutions efficiently - supported by a multi-disciplined Engineering Team with design and industry experience across semiconductor, healthcare, military, and industrial sectors. The facility includes a Reliability Lab with multiple Highly Accelerated Life Test (HALT), Highly Accelerated Stress Screen (HASS) and Environmental Chambers. An etch Plasma Chamber focuses on system validation for semiconductor fabrication equipment, and a 3-meter Anechoic EMC Chamber complements existing EMC compliance test stations to accelerate time-to-market. A dedicated Test Development Team is in place to design custom test equipment for specialized power conversion applications. The SVIC also incorporates eco-friendly features such as electric vehicle charging stations, automated LED lighting and HVAC systems, dishwashers to discourage single-use dishes, and the elimination of all Single-Use Plastics (SUP).	17.09.2024 14:00:00	Sep	news_2024-10-01_9.jpg	\images\news_2024-10-01_9.jpg	https://www.xppower.com/resources/press-releases/xp-power-unveils-silicon-valley-design-and-innovation-center	xppower.com
Micro DC/DC Stepup Converter operate from 0.9 V	Torex Semiconductor has launched its XCL109/XCL110...	12129	Product Release	Micro DC/DC Stepup Converter operate from 0.9 V	Torex Semiconductor has launched its XCL109/XCL110 series of inductor built-in step-up DC/DC converters. The XCL109/XCL110 series incorporates both the IC and coil into a package measuring 2.0 x 2.5 x h1.04 mm<sup>3</sup>. It is a step-up DC/DC converter that requires small input and output capacitors as peripheral components. The converter can start operation with an input voltage as low as 0.9 V, making it suitable for devices powered by a single alkaline or nickel-metal hydride battery. The output voltage is adjustable in 0.1 V increments within the range of 1.8 V to 5.5 V, and it operates at ambient temperatures of up to 105 °C. This product is available in three types to suit various applications: The "load disconnect type" cuts off the connection between input and output during standby, minimizing battery consumption, while the "bypass type" maintains the connection between input and output during MCU sleep mode, supplying the battery voltage directly. It boosts the voltage to 3.3 V or other levels only during active mode, thereby reducing power consumption during sleep and contributing to overall low power consumption of the device. The "output OR type" is ideal for output OR connections in configurations with multiple power lines or backup systems. The XCL109/XCL110 series are designed for industrial equipment, IoT, mobile devices, wearables, healthcare, and any other devices that demand compact size, low power consumption, and high functionality/performance while prioritizing battery life. The device is integrated into a CL-2025-02 package, which is pin-compatible with other inductor built-in step-up DC/DC products.	12.09.2024 15:30:00	Sep	news_2024-10-01_20.jpg	\images\news_2024-10-01_20.jpg	https://www.torexsemi.com/news/product/20240912_4499	torexsemi.com
Assuring Electromagnetic Compatibility in Australia	Hanwha Defence Australia (HDA) have chosen a Rohde...	12135	Industry News	Assuring Electromagnetic Compatibility in Australia	Hanwha Defence Australia (HDA) have chosen a Rohde & Schwarz designed and built EMC test solution. This capability is part of Stage 2 of the H-ACE facility where HDA is building the LAND 8116 Phase 1 Huntsman vehicles and LAND 400 Phase 3 Redback Infantry Fighting Vehicles. Custom built with a bespoke turntable for heavy vehicles, the E3 capability will be the largest of its kind in the southern hemisphere, providing the means for H-ACE-built vehicles to be tested to internationally recognised standards. Rohde & Schwarz Australia will be responsible for all elements of supply, including the in-country coordination and delivery of the E3 capability, and will also train the technical workforce to operate the facility.	12.09.2024 11:00:00	Sep	news_2024-10-15_6.jpg	\images\news_2024-10-15_6.jpg	https://www.rohde-schwarz.com/uk/about/news-press/all-news/hanwha-defence-australia-selects-rohde-schwarz-for-electromagnetic-compatibility-assurance-of-australian-armoured-vehicles-press-release-detailpage_229356-1518276.html	rohde-schwarz.com
2024 ASCM Award of Excellence	Infineon has received the "ASCM Award of Excellenc...	12115	Industry News	2024 ASCM Award of Excellence	Infineon has received the "ASCM Award of Excellence – Corporate Transformation" from the Association for Supply Chain Management (ASCM). The award recognizes an organizational transformation that improves business by assessing the supply chain using ASCM's global standards, products, services and resources. Infineon was honored for a supply chain initiative that implemented the Supply Chain Operations Reference (SCOR) model of ASCM. By focusing on customer-centricity, the semiconductor company "significantly improved customer satisfaction, optimized capacity use and realized substantial cost savings". Infineon transformed its supply chain to become more robust, agile, and resilient. The primary goals of this transformation were to enhance forecasting accuracy, implement agile response mechanisms like daily automated execution of the physical flexibility enabled by a superior master data system, adopt cost-efficient procurement practices, and build resilient partnerships. The ASCM is the global pacesetter of organizational transformation, talent development and supply chain innovation. As the largest association for supply chain, ASCM members and worldwide alliances fuel innovation and inspire accountability for resilient, dynamic and sustainable operations.	12.09.2024 11:00:00	Sep	news_2024-10-01_6.jpg	\images\news_2024-10-01_6.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFXX202409-140.html	infineon.com
Current Sensors for up to 800 A delivering 1 MHz Bandwidth	Allegro MicroSystems announced two XtremeSens&trad...	12138	Industry News	Current Sensors for up to 800 A delivering 1 MHz Bandwidth	Allegro MicroSystems announced two XtremeSens™ TMR sensors that streamline high power density designs, provide space savings while improving energy efficiency. Allegro's latest solutions, CT455 and CT456, offer high-bandwidth and low noise that enable precise current measurements for AI data center and automotive powertrain applications. The CT455 sensor supports two standard field ranges, allowing it to sense and translate magnetic fields into a linear analog output voltage, while the CT456 supports a preprogrammed ±6 mT field range. They are designed to enable high-accuracy current measurements on PCB or busbar applications from 80 A up to above 800 A, depending on the configuration, with the best performance advantages in the 80-200 A range. Unlike traditional high-power current sensors, Allegro's TMR sensors offer a contactless, non-intrusive solution that delivers 1 MHz bandwidth and a 300 ns response time to enable faster power conversion. The company claims that the devices are "optimized for rapid changes in voltage over time (high dv/dt)". For packaging 8-pin SOIC and TSSOP options are used. Evaluation boards are also available.	11.09.2024 06:30:00	Sep	news_2024-10-15_9.jpg	\images\news_2024-10-15_9.jpg	https://www.allegromicro.com/en/products/emerging-technologies/tmr	allegromicro.com
World's first 300 mm Power Gallium Nitride (GaN) Technology	Infineon Technologies has succeeded in developing ...	12090	Industry News	World's first 300 mm Power Gallium Nitride (GaN) Technology	Infineon Technologies has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology, accomplished in an existing and scalable high-volume manufacturing environment - a "breakthrough" which is said to "help substantially drive the market for GaN-based power semiconductors". Chip production on 300 mm wafers offers 2.3 times more chips per wafer than on 200 mm wafers. "The technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride", Jochen Hanebeck, CEO of Infineon Technologies, says. "Infineon is mastering all three relevant materials: silicon, silicon carbide and gallium nitride. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market." Infineon has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach/Austria. The company intends to "further scale GaN capacity aligned with market needs". Infineon claims that "300 mm GaN manufacturing will put Infineon in a position to shape the growing GaN market which is estimated to reach several billion US-Dollars by the end of the decade" and that "fully scaled 300 mm GaN production will contribute to GaN cost parity with silicon on R <sub>DS(on)</sub> level, which means cost parity for comparable Si and GaN products. The semiconductor manufacturer will present the first 300 mm GaN wafers to the public at the electronica trade show in November 2024 in Munich.	11.09.2024 06:00:00	Sep	news_2024-09-15_1.jpg	\images\news_2024-09-15_1.jpg	https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202409-142.html	infineon.com
Transformers for Power Line Communication	Communication between charging stations and electr...	12128	Product Release	Transformers for Power Line Communication	Communication between charging stations and electric vehicles via an interface compliant with EN ISO 15118 is a fundamental requirement for the public charging infrastructure. Würth Elektronik now offers the WE-PLC product series of SMT transformers for Power Line Communication (PLC). These PLC transformers are well-suited for galvanic isolation of the PLC system from the power supply. They are designed for data signals between 500 kHz and 30 MHz isolating the low-voltage range from the high-voltage range. The WE-PLC product series offers a high test voltage of 4500 V<sub>RMS</sub> for transformers of this package size (13.6 x 9.9 mm<sup>2</sup> footprint) with a maximum leakage inductance of 0.2 µH. The WE-PLC transformers are available with turns ratios of 1:1:1 and 1:4:3 for EV charging and AC interfaces for grid communication. The operating voltage is up to 250 V<sub>AC</sub>.	10.09.2024 14:30:00	Sep	news_2024-10-01_19.jpg	\images\news_2024-10-01_19.jpg	https://www.we-online.com/en/components/products/WE-PLC	we-online.com
Industrial 3 kW programmable Power Supplies	TDK Corporation has introduced the 3000 W TDK-Lamb...	12126	Product Release	Industrial 3 kW programmable Power Supplies	TDK Corporation has introduced the 3000 W TDK-Lambda brand HWS3000 programmable AC/DC power supplies in a 270 x 150 x 61 mm<sup>3</sup> case. The nominal output voltages (24 V, 48 V, 60 V or 130 V) and output currents are fully programmable (CV/CC) from zero up to their maximum rating. The HWS3000 series is available with an 85 – 265 V<sub>AC</sub> single-phase or three-phase 170 – 265 V<sub>AC</sub> input. Output programming can be achieved using a serial RS485 interface (MODBus protocol) or analog 1 – 5 V or 4 – 20 mA signals. The speed fan is variable with typically 45 dB audible noise at <70% load, and a 25 °C ambient temperature. The power supplies can be used in a wide range of applications, including test and measurement, semiconductor fabrication, RF amplifiers, laser machining, printing, and industrial equipment. The HWS3000G can deliver 1500 W with a low-line single-phase input voltage (85 to 132 V<sub>AC</sub>) and 3000 W at high-line (170 to 265 V<sub>AC</sub>). The HWS3000GT provides 3000 W from a three-phase input voltage of 170 - 265 V<sub>AC</sub>. Four nominal output voltages, 24 V, 48 V, 60 V and 130 V, can be programmed to provide 0 - 28.8 V, 0 - 52.8 V, 0 – 66 V, and 0 – 156 V. Up to three units can be connected in series, or ten units in parallel. The output voltage slew rate can be digitally programmed and monitored, along with information regarding cumulative operating time, fault log, and product identification information. Digital programming can be performed without turning the power supply on.	10.09.2024 12:30:00	Sep	news_2024-10-01_17.jpg	\images\news_2024-10-01_17.jpg	https://product.tdk.com/en/power/hws-g/	tdk.com
Automotive-qualified Small Signal MOSFETs in tiny Packages	Nexperia released single and dual small-signal MOS...	12122	Product Release	Automotive-qualified Small Signal MOSFETs in tiny Packages	Nexperia released single and dual small-signal MOSFETs in miniature DFN packages. The automotive-qualified devices are available in DFN1110D-3 and DFN1412-6 respectively. Particularly the DFN1110D-3 (1.1 mm x 1 mm) package has seen increasingly wide adoption and is quickly becoming the 'de-facto' industry standard package for small-signal MOSFETs and bipolar transistors intended for use in automotive applications. DFN1110D-3 and DFN1412-6 are leadless packages that offer superior thermal performance, with almost 50% lower thermal resistance from junction to ambient (R<sub>thj-s</sub>), from a tiny footprint (up to 80% smaller). This makes them a highly attractive alternative to established high-volume leaded enclosures such as SOT23, SOT323, SOT363, or SOT666, thereby addressing the automotive industry's relentless demand for miniaturized components. The DFN1110-D-3 also features side-wettable flanks to support lower-cost automated optical inspection (AOI) of solder joints.	10.09.2024 08:30:00	Sep	news_2024-10-01_13.jpg	\images\news_2024-10-01_13.jpg	https://www.nexperia.com/products/mosfets/	nexperia.com
30 V Power MOSFETs for Mass Market Applications	Infineon has expanded its StrongIRFET™ 2 pow...	12121	Product Release	30 V Power MOSFETs for Mass Market Applications	Infineon has expanded its StrongIRFET™ 2 power MOSFET portfolio to 30 V solutions. Optimized for high robustness and ease-of-use, the power MOSFETs were specifically designed to meet the requirements of a wide range of mass market applications. Amongst these applications are industrial switched-mode power supplies (SMPS), motor drives, battery-powered applications, battery management systems, and uninterruptible power supplies (UPS). The 30 V technology offers up to a 40 percent R <sub>DS(on)</sub> improvement and up to a 60 percent reduction in Q <sub>G</sub> compared to the previous generation of StrongIRFET devices. The StrongIRFET 2 power MOSFETs in 30 V are available now in a TO-220 package. By the end of 2024, the portfolio will be available in a wider range of industry-standard packages and pin-out options, including to DPAK, D<sup>2</sup>PAK, PQFN and SuperSO8.	10.09.2024 07:30:00	Sep	news_2024-10-01_12.jpg	\images\news_2024-10-01_12.jpg	https://www.infineon.com/strongirfet2_30v/	infineon.com
2" x 4" 250 W Medical and Industrial Power Supply Series	TDK announces additional output voltage models to ...	12105	Product Release	2" x 4" 250 W Medical and Industrial Power Supply Series	TDK announces additional output voltage models to the 250 W rated TDK-Lambda brand CUS250M series of power supplies in the industry standard 2" x 4" footprint. The full range now covers 12 V, 15 V, 18 V, 24 V, 28 V, 36 V and 48 V and is certified to the IEC 62368-1 and IEC 60601-1 safety standards for industrial and medical applications. This includes both Class I and Class II (no earth ground required) installations. The CUS250M has mechanical configurations that enable convection and/or conduction cooling through the product's baseplate to provide silent cooling. Applications include medical, home healthcare, dental, test, measurement, broadcast, professional audio and industrial equipment. The output can be adjusted to accommodate non-standard voltages, either by the factory or using the on-board potentiometer. The CUS250M operates across an 85 to 264 V<sub>AC</sub> input and has a earth leakage current of less than 150 μA - including all tolerances. The touch current is <10 μA (Class I) and <70 μA (Class II). In ambient temperatures of -20 °C to +45 °C the CUS250M can deliver up to 250 W conduction cooled without external air. With appropriate derating, operation at up to +80 °C is also possible. The efficiency is up to 94%, and the average efficiency, measured at 25, 50, 75 and 100% loads, is greater than 91%, while offload power consumption is less than 0.5 W when the output is inhibited.	09.09.2024 11:30:00	Sep	news_2024-09-15_16.jpg	\images\news_2024-09-15_16.jpg	https://product.tdk.com/system/files/dam/doc/product/power/switching-power/ac-dc-converter/catalog/cus250m_e.pdf	lambda.tdk.com
40 V MOSFETs in PDFN 33 Packages	Magnachip Semiconductor released four 40V MXT MV M...	12103	Product Release	40 V MOSFETs in PDFN 33 Packages	Magnachip Semiconductor released four 40V MXT MV MOSFETs designed in Power Dual Flat No-Lead (PDFN) 33 packages for automotive applications. This package reduces the area by more than 60% and the weight by approximately 75% as compared to 40 V MOSFET products packaged in PDFN56. Among these products, three models - AMDV040N029LVRH, AMDV040N036LVRH, and AMDV040N042LVRH - are distinguished by their gate threshold voltage of 1.8 V. The gate threshold voltage determines the point at which the MOSFET switches from an off-state to an on-state. A lower threshold voltage reduces the energy required to operate the MOSFET, thereby decreasing the overall power consumption of the system. For example, the AMDV040N029LVRH provides a typical/maximum R<sub>DS(on)</sub> of 3.8 m&ohm;/5.0 m&ohm; at V<sub>GS</sub> = 4.5 V and of 2.5 m&ohm; / 2.9 m&ohm; at V<sub>GS</sub> = 10 V. The typical gate charge Q<sub>g</sub> at V<sub>GS</sub> = 10 V is specified with 30 nC.	09.09.2024 09:30:00	Sep	news_2024-09-15_14.jpg	\images\news_2024-09-15_14.jpg	https://www.magnachip.com/automotive-solutions/	magnachip.com
2300V Baseplate-less SiC Power Modules	Wolfspeed unveiled a silicon carbide module design...	12120	Product Release	2300V Baseplate-less SiC Power Modules	Wolfspeed unveiled a silicon carbide module designed to transform the renewable energy, energy storage, and high-capacity fast-charging sectors through improved efficiency, durability, reliability, and scalability. The 2300V baseplate-less silicon carbide power modules for 1500V DC Bus applications were developed and launched utilizing Wolfspeed's 200 mm silicon carbide wafers. Furthermore, Wolfspeed also announced that it is partnering with EPC Power, who will use the Wolfspeed® modules in utility-grade solar and energy storage systems, which offer a scalable high-power conversion system and high-performance controls and system redundancy. Wolfspeed's 2300V modules will improve system efficiency, while reducing the number of passive components. They are said to "offer 15% greater voltage headroom compared to similar silicon carbide modules, improved dynamic performance with consistent temperature stability, and a substantial reduction in EMI filter size". Wolfspeed's technology achieves a 77% reduction in switching losses over IGBTs and a 2-3x reduction in switching losses for silicon carbide devices intended for 1500V applications. These 2300V modules will enable the industry to adopt the two-level topology, resulting in simplified system design and reduced driver count compared to IGBT-based three-level configurations. The benefits of 2300V modules support a building block approach to scale power tenfold, from kilowatts to megawatts.	09.09.2024 06:30:00	Sep	news_2024-10-01_11.jpg	\images\news_2024-10-01_11.jpg	https://www.wolfspeed.com/company/news-events/news/wolfspeed-unveils-cutting-edge-silicon-carbide-module-solution-to-boost-clean-energy-capacity/	wolfspeed.com
Executive Vice President for German Electronics Specialist	With effect from 1 August 2024 Thomas Garz has bee...	12092	People	Executive Vice President for German Electronics Specialist	With effect from 1 August 2024 Thomas Garz has been appointed Executive Vice President for the Würth Elektronik eiSos Group. The 37-year-old has been with the Würth Group since 2006. Most recently, he was Senior Vice President of the Würth Line Craft, the core business of the Würth Group, for Scandinavia and additionally responsible for International Systems of the Würth Line. The organizational structure of the Würth Elektronik eiSos Group will remain unchanged as a result of this appointment. Before taking up his position as the Senior Vice President of the Würth Line Craft for Scandinavia, Thomas Garz held various positions, including sales and shop manager, assistant to the management and auditor for Würth.	06.09.2024 07:00:00	Sep	news_2024-09-15_3.jpg	\images\news_2024-09-15_3.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=thomas-garz	we-online.com
Long-Term Supply Agreement for SiC Power Devices signed	ROHM and United Automotive Electronic Systems (UAE...	12095	Industry News	Long-Term Supply Agreement for SiC Power Devices signed	ROHM and United Automotive Electronic Systems (UAES), a Tier 1 automotive supplier in China, have recently entered into a long-term supply agreement for SiC power devices. Already since 2015, ROHM and UAES have been collaborating and carrying out detailed technical exchanges on automotive applications utilizing SiC power devices. This partnership deepened in 2020 with the establishment of the SiC Joint Research Institute at the UAES headquarters in Shanghai, China. And in 2021 ROHM's advanced SiC power devices and peripheral components were highly evaluated by UAES, resulting in ROHM being selected as a preferred supplier. The close long-standing technical partnership has led to the production and adoption of numerous automotive products equipped with ROHM SiCs, such as onboard chargers and inverters for electric vehicles. This long-term supply agreement is said to ensure UAES sufficient access to SiC power devices to meet the growing demand for SiC-based inverter modules. Going forward, both companies will deepen their collaboration, contributing to technological innovation in the automotive sector by accelerating the development of SiC power solutions for EVs.	05.09.2024 08:30:00	Sep	news_2024-09-15_6.jpg	\images\news_2024-09-15_6.jpg	https://www.rohm.com/news-detail?news-title=2024-09-05_news&defaultGroupId=false	rohm.com
Acquisition of Austrian Power Supply Company	RECOM has enhanced its portfolio of products and c...	12094	Industry News	Acquisition of Austrian Power Supply Company	RECOM has enhanced its portfolio of products and capabilities by acquiring Leco. Like RECOM Leco is based in Austria, and according to RECOM Leco "is one of only a few companies that specialize in design and manufacture of full custom, high-end power solutions". By integrating LECO's engineering expertise and high-end power conversion products into its portfolio, RECOM enhances its market position and delivers more, comprehensive, high-end power supply solutions to its global customer base. "We are proud to have established this partnership with LECO. This provides us with an opportunity to expand our engineering capabilities and product portfolio for our customers, especially in industrial, automation & supply chain end-markets, as well as leveraging our global footprint for the sale of LECO high-end products.", Karsten Bier, CEO and Shareholder, RECOM.	05.09.2024 08:00:00	Sep	news_2024-09-15_5.jpg	\images\news_2024-09-15_5.jpg	https://recom-power.com/en/company/newsroom/rec-n-recom-expands-expertise-in-high-end-power-product-design-and-manufacture-with-the-acquisition-of-leco-385.html?7	recom-power.com
Gen-3 Fast SiC to now qualified according to AEC Q101	Navitas Semiconductor announced several third-gene...	12109	Product Release	Gen-3 Fast SiC to now qualified according to AEC Q101	Navitas Semiconductor announced several third-generation automotive-qualified SiC MOSFETs in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages. Navitas' proprietary 'trench-assisted planar' technology is claimed to provide "world-leading performance over temperature" and to deliver high-speed, cool-running operation for electric vehicle (EV) charging, traction, and DC-DC conversion. With case temperatures up to 25°C lower than conventional devices, Gen-3 Fast SiC is said to offer an operating life up to 3x longer than alternative SiC products, for high-stress EV environments. Gen-3 Fast MOSFETs are optimized for fast switching speeds at high efficiencies, and support increased power density in EV applications such as AC compressors, cabin heaters, DC-DC converters, and on-board chargers (OBCs). Navitas' EV Design Center has demonstrated already OBC system solutions up to 22 kW with 3.5 kW/l power density, and over 95.5% efficiency. Both 650 and 1,200 V ranges are now AEC Q101-qualified in the traditional SMT D2PAK-7L (TO-263-7) package. For 400 V EVs, the 650 V-rated, surface-mount TOLL package offers a 9% reduction in junction-to-case thermal resistance (R<sub>TH,J-C</sub>), 30% smaller PCB footprint, 50% lower height, and 60% smaller size than the D2PAK-7L. This enables very high-power density solutions, while minimal package inductance of only 2 nH enables fast-switching performance and adequate dynamic package losses. 400 V-rated EV battery architectures are served by the 650 V Gen-3 Fast MOSFETs featuring R<sub>DS(ON)</sub> ratings from 20 to 55 mΩ. The 1,200 V ranges from 18 to 135 mΩ and is optimized for 800 V systems.	04.09.2024 15:30:00	Sep	news_2024-09-15_20.jpg	\images\news_2024-09-15_20.jpg	https://navitassemi.com/sic-power-fets-and-diodes/	navitassemi.com
Dual 5 A Low-Side MOSFET Gate Drivers for High-Frequency Applications	Littlefuse launched the IX4341 and IX4342 dual 5 A...	12102	Product Release	Dual 5 A Low-Side MOSFET Gate Drivers for High-Frequency Applications	Littlefuse launched the IX4341 and IX4342 dual 5 A low-side MOSFET gate drivers, which complete the existing IX434x driver series by adding the remaining two logic input versions. The IX434x series now consists of dual non-inverting, dual inverting, and non-inverting and inverting input versions. The IX4341 and IX4342 drivers' propagation delay times of 16 ns and rise and fall times of 7 ns make them suited for high-frequency applications. Additionally, for higher current requirements, electronics designers can parallel the two channels of the IX4340 and IX4341 devices to form a single 10 A driver. Another feature of the IX434x drivers is their compatibility with TTL and CMOS logic inputs, enabling direct interfacing with most controllers. Furthermore, each output has an independent ENABLE function and under-voltage lockout circuitry (UVLO). In case of eventual insufficient supply voltage, the gate driver output is asserted low, turning the external power device off. The devices find applications in various markets, including general industrial and electrical equipment, appliances, building solutions, data centers, energy storage, and renewable energy – whenever MOSFETs in industrial applications such as switch-mode power supplies, DC-DC converters, motor controllers and power converters need to be driven. In terms of packaging a standard 8-pin SOIC, thermally enhanced 8-pin SOIC, and 3×3 mm<sup>2</sup> MSOP packages are available.	04.09.2024 08:30:00	Sep	news_2024-09-15_13.jpg	\images\news_2024-09-15_13.jpg	https://www.littelfuse.com/products/integrated-circuits/gate-driver-ics/igbt-and-mosfet-driver-ics/low-side-gate-driver-ics.aspx	littelfuse.com
Evaluation Board for 240 W PD 3.1 Charger with Efficiency >95 %	Eggtronic has unveiled an evaluation board (EVB) t...	12101	Product Release	Evaluation Board for 240 W PD 3.1 Charger with Efficiency >95 %	Eggtronic has unveiled an evaluation board (EVB) that allows engineers to speed the development and significantly reduce the size and cost of 240 W power delivery (PD) 3.1 applications while supporting ultra-fast charging through high efficiency. The SmartEgg 240W PD 3.1 EVB has a peak efficiency above 95% and operates at over 90% efficiency from light load to full load. A single stage that combines zero voltage switching (ZVS) power factor correction (PFC) and quasi-forward isolated regulation significantly reduces bill of materials (BOM) and size of key components (including storage capacitors and magnetics) compared to traditional PFC+LLC and PFC+Asymmetric Half-Bridge (AHB) architectures. The result is a platform that delivers light-load energy savings of up to 50%, achieves a power density of 1.34W/cm3 (21.9W/in<sup>3</sup>) to support extremely compact charger designs and, most importantly, reduces BOM cost. Based on Eggtronic's SmartEgg AC/DC architecture, the EVB incorporates proprietary mixed-signal, low-power EPIC (Eggtronic Power Integrated Controller) 2.0 IC controllers and features built-in protection against overpower, overvoltage, overtemperature, short circuits and brownouts. EPIC, which is based on a 32-bit RISC-V core and a set of high-performance digital and analog peripherals, incorporates an internal structure that supports multiple independent control loops of both standard and proprietary power conversion architectures. Supplied as a dual-port module, the SmartEgg 240W PD 3.1 EVB can be directly modified for any number of charging ports thanks to the flexibility of the EPIC 2.0 controller, which supports many slave buck converters, each acting as a standalone port.	04.09.2024 07:30:00	Sep	news_2024-09-15_12.jpg	\images\news_2024-09-15_12.jpg	https://www.eggtronic.com/products-services/integrated-circuits/epic2acsxx/	eggtronic.com
electronica 2024: The electronics Trade Show turns 60	electronica celebrated its premiere in 1964 as the...	12093	Event News	electronica 2024: The electronics Trade Show turns 60	electronica celebrated its premiere in 1964 as the first trade fair in Germany devoted solely to electronic components. In the meantime, it has been accompanying innovations in the international electronics industry for six decades, providing a market overview of its latest products, technologies and solutions every two years. In 2024, this trade fair for electronics will celebrate its 60th anniversary from November 12 to 15, occupying all 18 exhibition halls for the first time ever (together with SEMICON Europe in two halls). The focus will be on the future vision of an all electric society. Already at the first edition in Munich in October 1964 a total of 407 companies from 16 countries exhibited on an area of 4,100 square meters, and around 14,000 trade visitors came to visit on the eight days of the fair. Already now the trade show organizer states that the 2024 edition of electronica "will be the biggest electronica of all time".	04.09.2024 07:30:00	Sep	news_2024-09-15_4.jpg	\images\news_2024-09-15_4.jpg	https://electronica.de/en/trade-fair/journalists/press-releases/detail/the-electronics-industry-turns-60.html?utm_campaign=ELE_2024_P_PMI_08_EN_MAN%20-%20Batch&utm_medium=mail_mmg&utm_source=eloqua&utm_content=ELE_2024_P_PMI_08_EN_MAN&utm_marketing_tactic=service	electronica.de
PCIM Asia 2024 grew significantly	PCIM Asia 2024, an international platform for comm...	12091	Event News	PCIM Asia 2024 grew significantly	PCIM Asia 2024, an international platform for communication and exchange in power electronics, intelligent motion, renewable energy and energy management, successfully concluded late August at the Shenzhen World Exhibition and Convention Center in China. Setting new records across nearly all metrics, the 2024 edition was the largest and most comprehensive iteration of the event to date. Floor space grew by 8,000 m2 (+67 %) to a total of 20,000 m<sup>2</sup>. The number of visitors (from 41 countries) increased 20 % over the 2023 edition to a total of 18,346, while the number of exhibitors (from 13 countries and regions) increased 28 % over the 2023 edition to a total of 232. To promote further dialogue and collaboration, the exhibition presented a series of industry forums, exhibitor forums and round-table discussions, covering topics ranging from wide-bandgap semiconductors and e-mobility to eVTOL development. At these sessions, representatives from several companies and researchers shared insights on development trends, new market applications and cutting-edge research. Alongside the exhibition, the PCIM Asia Conference 2024 once again featured technical advancements and applications in power electronics. 981 conference visitors listened to 3 keynote speeches, 12 oral sessions and 6 poster sessions as well as to 104 presentations. PCIM Asia is jointly organised by Guangzhou Guangya Messe Frankfurt Co Ltd and Mesago Messe Frankfurt GmbH. The next edition will take place from 14 – 16 August 2025 at the Shanghai New International Expo Centre (SNIEC) in Shanghai, China.	04.09.2024 06:30:00	Sep	news_2024-09-15_2.jpg	\images\news_2024-09-15_2.jpg	https://pcimasia-expo.cn.messefrankfurt.com/shenzhen/en/press/press-releases/2024/PCIM24_FR.html	pcimasia-expo.cn
Power Factor Correction Chokes für up to 1000 V_DC	ITG Electronics now offers a range of power factor...	12108	Product Release	Power Factor Correction Chokes für up to 1000 V<sub>DC</sub>	ITG Electronics now offers a range of power factor correction chokes (PFCs) for particularly high-voltage applications. Capable of accommodating up to 1,000 V<sub>DC</sub> and 1,500 W, the company's PFC333232DH Series includes CCM PFC boost converters with switching frequencies from 100-200 kHz. The series also can be adopted as a straightforward boosted inductor. The solutions are viable for inductance ranges from 82-1600 μH at a maximum length/width/height of 33 mm x 32 mm x 31.6 mm. Compared with traditional toroidal-shaped PFC chokes, the PFC333232DH Series features a flat wire and square core construction to save space and increase power density. The solutions are up to 50% smaller compared with toroidal-shaped PFC chokes with similar power ratings, and their flat wire technology can reduce DC resistance by as much as 40%, leading to substantially lower copper losses. The PFC chokes are applicable for AC/DC conversion in industrial, equipment and automotive applications. The high-current output chokes can handle up to 41.9 A with approximately 50% roll off.	03.09.2024 14:30:00	Sep	news_2024-09-15_19.jpg	\images\news_2024-09-15_19.jpg	https://itg-electronics.com/en/series/920	itg-electronics.com
Medically approved 4:1 input DC/DC Converters	XP Power has introduced the JMR03/10/20 series of ...	12104	Product Release	Medically approved 4:1 input DC/DC Converters	XP Power has introduced the JMR03/10/20 series of 3 W, 10 W, and 20 W medically approved DC/DC converters that offer a 4:1 input ratio. These devices provide 2 x MOPP (Means of Patient Protection) with 2 μA leakage current, ensuring integration into both BF (Body Floating) and CF (Cardiac Floating) rated healthcare applications. Their no-load input idle current is specified down to 4 mA, depending on the model. These fully encapsulated products are suited for use in applications like medical imaging, patient monitoring, patient treatment, dentistry, and respiratory care equipment. Models within the JMR03 (3.5 W), JMR10 (10 W), and JMR20 (20 W) series are available with output voltages of 5 V, 12 V, 15 V ±12 V or ±15 V; the JMR10/20 series offer an additional ±5 V output. The dual-output models can also provide a single 10 V, 24 V or 30 V output. The single output models can also be adjusted by -10% to +10% of the output voltage for non-standard requirements. All output power and voltage combinations can operate from either a 24 V (9.0 - 36.0 V) or 48 V (18.0 - 75.0 V) input, with the JMR03/10 series additionally operating from a 12 V (4.5 – 18 V) input. The operating temperature range for the JMR03/10/20 series is from -40 °C to +100 °C. All models are protected against short circuit and overload conditions, feature a remote on/off function, and have an input-to-output isolation voltage of 5 kV<sub>AC</sub>. Safety certification includes UL/CSA/IEC/EN 60601-1 and UL62368-1 with CE and UKCA markings for the low voltage and RoHS Directives.	03.09.2024 10:30:00	Sep	news_2024-09-15_15.jpg	\images\news_2024-09-15_15.jpg	https://www.xppower.com/product/JMR10-Series	xppower.com
Current Sensors achieve ASIL C(D) Compliance	Melexis reaches ASIL C safety compliance with its ...	12098	Industry News	Current Sensors achieve ASIL C(D) Compliance	Melexis reaches ASIL C safety compliance with its smart IVT (current, voltage, temperature) sensing platform. The Hall-effect MLX91230 and Shunt interface MLX91231 simplify the achievement of ISO 26262 ASIL C(D) architecture for critical vehicle functions such as battery management systems (BMS), smart pyrofuses, and high-voltage charging systems. Both devices integrate a wide range of smart functionality, including the microcontroller unit (MCU) with on-board flash memory that supports custom software deployment and extensive compensation of system imperfections. The diagnosable OCD allows for direct input to the Pyro-Fuse driver, enabling the simple deployment of smart pyrofuses with fewer components. Furthermore, the ASIL C safety level applies to the current sensing function and OCD, as well as the additional temperature and voltage measurement channels. The selectable LIN or UART output enables integration with 12V battery applications and power distribution modules, as well as direct communication with BMS or UART-over-CAN.	29.08.2024 10:00:00	Aug	news_2024-09-15_9.jpg	\images\news_2024-09-15_9.jpg	https://www.melexis.com/en/news/2024/29aug2024-melexis-achieves-asil-c-with-its-ivt-current-sensors	melexis.com
240 V/1 kA Bidirectional Power TVS Diode in a Surface Mount Package	Bourns has introduced "the industry's first 240 V/...	12100	Product Release	240 V/1 kA Bidirectional Power TVS Diode in a Surface Mount Package	Bourns has introduced "the industry's first 240 V/1 kA Bidirectional Power TVS (PTVS) Diode that offers the highest power density available in a surface mount package". The PTVS1-240C-M PTVS Diode offers 1 kA surge handling capability under 8/20 µs test conditions and is thus suited for a broad variety of systems that employ high-voltage DC bus architectures. These systems commonly experience high current switching transients and dynamic load behaviors where snubbing is needed, or protection of bus-powered subsystems is required. The PTVS1-240C-M PTVS Diode is a low-leakage device consuming 10 μA in standby while delivering a maximum breakdown voltage of 295 V, repetitive standoff voltage of 240 V and precise clamping voltage of 340 V. Under 10/350 μs conditions, this device is rated for 200 A peak current, and its voltage breakdown sensitivity over temperature shows a linearity of 0.1 %/°C. The company reports that the "surface mount package offers a significant reduced PCB footprint and lower inductance design advantages compared to traditional through-hole mounted Power TVS Diodes". Applications that can benefit from the features and capabilities of the Model PTVS1-240C-M include industrial power systems, motor controllers and inverters, solar inverters, battery energy storage systems, and factory automation. The device is UL497B certified and meets IEC 61000-4-5 standard specifications. It is also RoHS compliant and halogen free.	29.08.2024 06:30:00	Aug	news_2024-09-15_11.jpg	\images\news_2024-09-15_11.jpg	https://www.bourns.com/docs/product-datasheets/PTVS1-240C-M.pdf	bourns.com
European GaN Company establishes Asian Subsidiary	Wise-integration, a French company active in digit...	12099	Industry News	European GaN Company establishes Asian Subsidiary	Wise-integration, a French company active in digital control of gallium nitride ICs for power supplies, announced the launch of its subsidiary Wise-integration Ltd., based in Hong Kong to help Chinese customers achieve their power/performance/cost goals and accelerate its growing business in China. In addition to serving as the company's financial hub for regional transactions and boosting its presence generally in the Asian market, the subsidiary will enable the company to take advantage of business opportunities in China, a large and receptive market for its GaN-based power electronics solutions with digital control. In the past two years, Wise-integration announced partnerships with companies in South Korea and Taiwan to help bring its technologies to those markets. The company's product markets include consumer electronics and industrial applications like robotics, as well as data centers and electric vehicles. All of its solutions address the increasing demands for miniaturization, electrification and efficient power management. Led by James Ho, as China business development director, Wise-integration Ltd. is based in HKSTP (the Hong Kong Science and Technology Park).	28.08.2024 10:30:00	Aug	news_2024-09-15_10.jpg	\images\news_2024-09-15_10.jpg	https://wise-integration.com/wise-integration-creates-subsidiary-to-manage-asian-business-development-and-spur-growth-in-china/	wise-integration.com
Intelligent Power Device for BLDC Motor Drives	Toshiba Electronics has launched a small intellige...	12107	Product Release	Intelligent Power Device for BLDC Motor Drives	Toshiba Electronics has launched a small intelligent power device (IPD) for space-constrained brushless DC (BLDC) motor drive applications such as air conditioners, air purifiers, and pumps. The IPD, TPD4165K, has an increased maximum output current of 3 A, compared to the 2 A rating of Toshiba's existing products like TPD4163K, or TPD4164K. The device is suitable for sine-wave drive. As power supply voltage may fluctuate significantly in some regions where the IP could be used, the absolute maximum voltage rating (V<sub>BB</sub>) has been increased to 600 V to enhance long-term reliability. This represents a 20% increase over Toshiba's previous products. TPD4165K is housed in a through-hole HDIP30 package with dimensions of 32.8 mm x 13.5 mm x 3.525 mm. This has a 21% smaller footprint than the DIP26 package used for many of Toshiba's previous products. It supports either three-shunt or single-shunt resistor circuit for current sensing. Safety features like over-current, under-voltage and thermal shutdown are already implented. Additionally, an external signal can be applied to the SD pin to control the behavior of the output stage. The DIAG output pin provides the status of the safety conditions. Designers can freely access a reference design for a sensorless BLDC motor drive circuit based upon the new TPD4165K and Toshiba's TMPM374FWUG microcontroller with vector control engine capability. The reference design data can be downloaded from Toshiba's website.	27.08.2024 13:30:00	Aug	news_2024-09-15_18.jpg	\images\news_2024-09-15_18.jpg	https://toshiba.semicon-storage.com/eu/semiconductor/product/intelligent-power-ics/detail.TPD4165K.html	toshiba.semicon-storage.com
Absorber Patch Attenuates like a Shielding Cabinet	Würth Elektronik has launched its hybrid WE-EMIP E...	12106	Product Release	Absorber Patch Attenuates like a Shielding Cabinet	Würth Elektronik has launched its hybrid WE-EMIP EMI absorber sheet, a convenient solution for preventing electromagnetic interference. The integrated adhesive layer makes the patch easy to stick on. It offers an attenuation of more than 40 dB over a wide frequency range. Both isolated and non-isolated versions are available. The non-isolated version allows the option of earthing. The hybrid absorber sheet consisting of EMI absorber material and aluminum layer is now available in the following sizes: as a sheet 105 mm × 74 mm, 297 mm × 210 mm or as a roll 15 m × 50 mm. The patch offers up to 12 times higher attenuation than previously available absorber sheets and helps achieve attenuation values otherwise attainable only with shielding cabinets.	27.08.2024 12:30:00	Aug	news_2024-09-15_17.jpg	\images\news_2024-09-15_17.jpg	https://www.we-online.com/en/components/products/WE-EMIP_EMI_PATCH	we-online.com
Joining the Global Battery Alliance	Siemens Digital Industries Software announced toda...	12096	Industry News	Joining the Global Battery Alliance	Siemens Digital Industries Software announced today it has joined the Global Battery Alliance (GBA), a collaboration platform that brings together international organizations, NGOs, industry actors, academics and multiple governments to align collectively in a pre-competitive approach, to drive systemic change along the entire battery manufacturing value chain. The vision of the GBA is to achieve three fundamental outcomes, which Siemens endorses and actively contributes to: establish a circular battery value chain, establish a low carbon economy in the value chain, and safeguard human rights and economic development. Through dedication to these principles, Siemens aims to bring about sustainable practices within the battery industry that not only minimize environmental impact but also create new job opportunities and generate additional economic value for communities worldwide. By joining GBA, Siemens is aligning with major stakeholders across the entire battery supply chain, spanning from material developers to cell suppliers, OEMs, and government bodies to strive towards a greener and more ethical future.	27.08.2024 09:00:00	Aug	news_2024-09-15_7.jpg	\images\news_2024-09-15_7.jpg	https://xcelerator.siemens.com/global/en/industries/battery-manufacturing/battery-passport.html	xcelerator.siemens.com
Investment in additional R&D Capabilities in Europe and Asia	To satisfy the growing global demand for current a...	12075	Industry News	Investment in additional R&D Capabilities in Europe and Asia	To satisfy the growing global demand for current and voltage sensing driven by the push towards decarbonization and greater electrification, LEM has opened new research and development facilities in Munich and Shanghai. The two sites are said to enable LEM to build greater intelligence into its sensors and to have development bases closer to key customers, while also promoting deeper collaboration on projects and the efficient sharing of vital product design information. While the China site will be kitted out with the very latest laboratory equipment, the site in Germany will focus on ASIC design and semiconductor technology that will help accelerate LEM’s innovation in integrated current sensors (ICSs). This latest investment in additional R&D facilities in Europe and Asia follows on from LEM’s recent inauguration of a factory in Malaysia. LEM’s investment in the state of Penang was an acknowledgment of the region’s expertise in ASIC technology and its specialization in semiconductor design and production. There are already 10 employees in place at Munich and this number will increase in line with LEM’s growth plans for the site. At the 1400 m² Shanghai facility, there are currently 30 staff with the capacity to more than double that number in the future, many of whom will be involved in R&D.	23.08.2024 11:00:00	Aug	news_2024-09-01_6.jpg	\images\news_2024-09-01_6.jpg	https://www.lem.com/en	lem.com
Ideal Diodes in small TSSPs	Nexperia has introduced two ideal power diode ICs....	12086	Product Release	Ideal Diodes in small TSSPs	Nexperia has introduced two ideal power diode ICs. The NID5100 is suitable for standard industrial and consumer applications while the NID5100-Q100 has been qualified for use in automotive applications. Ideal diodes are MOSFET-based devices that offer much lower forward voltage drop than traditional diodes and make a good replacement option to standard diodes in systems where power efficiency is paramount. The NID5100 and NID5100-Q100 ideal diodes are available in small TSSP6/SOT363-2 leaded plastic packages measuring 2.1 mm x 1.25 mm x 0.95 mm. Applications that can benefit from their electrical performance include smart meters, fire/security sensors, battery powered wearables, and automotive telematics units. The NID5100 is a PMOS based ideal diode where the gate voltage of an internal MOSFET regulates the anode-to-cathode voltage to be eight to ten times lower than the forward voltage drop of similarly rated Schottky diodes. Besides the low forward drop, the MOSFET-based ideal diode also helps to reduce reverse DC leakage current by up to 100 times compared to a typical Schottky diode. The NID5100 supports "OR-ing" multiple power supplies while retaining reverse polarity protection and provides ultra-fast response time for smooth power transfer. Its forward regulation voltage is 31 mV with forward currents up to 1.5 A.	22.08.2024 12:30:00	Aug	news_2024-09-01_17.jpg	\images\news_2024-09-01_17.jpg	https://assets.nexperia.com/documents/data-sheet/NID5100.pdf	nexperia.com
MOSFETs in SMD Package for High Performance Applications	Alpha and Omega Semiconductor has announced Power ...	12089	Product Release	MOSFETs in SMD Package for High Performance Applications	Alpha and Omega Semiconductor has announced Power MOSFETs in LFPAK 5x6 packages for voltages of 40 V (AOLF66412, AOLF66413 and AOLF66417), 60 V (AOLF66610), and 100 V (AOLF66910). The devices are designed to withstand harsh environments while maintaining MOSFET performance in applications such as industrial, server power, telecommunications, and solar, where high reliability is required. The LFPAK packaging enables higher board-level reliability due to key packaging features such as gull-wing leads, which offer a ruggedized solution for board-level environmental stresses. The gull-wing leads also enable optical inspection during PCB manufacturing. Another feature enhancement is the LFPAK's larger copper clip, which improves electrical and thermal performance. Advantages of the large clip include improved current handling capabilities, reduced on-resistance, and better heat dispersion compared to wire bonding. A large clip also has low parasitic inductance, enabling lower spike voltage in switching applications. The devices operate with gate-source voltages of ±20 V at maximum junction temperatures of 175 °C. The drain current @ 25 °C and the maximum R<sub>DS(on)</sub> both depend on the model ranging from 187 to 294 A or, respectively, 1.5 to 4.7 mΩ at a gate-source voltage of 10 V.	21.08.2024 15:30:00	Aug	news_2024-09-01_20.jpg	\images\news_2024-09-01_20.jpg	https://www.aosmd.com/sites/default/files/2024-08/AOS_LFPAK_PR_1.pdf	aosmd.com
Industrial AC/DC Power Supplies in 2" x 3" Packages	Traco Power released its TXO family of 45, 60 & 12...	12088	Product Release	Industrial AC/DC Power Supplies in 2" x 3" Packages	Traco Power released its TXO family of 45, 60 & 120 W compact AC/DC Power supplies. These are the first 3 power levels of a TXO family of power supplies that will eventually go to 500 W. The TXO line specifically focuses on providing cost-efficient industrial power supplies. Efficiencies of up to 92 % allow for a compact design, and these models are designed to meet the ErP directive (< 0.3 W no load power consumption). Features include an internal EN55032 class B filter, as well as EMC characteristics dedicated for applications in industrial/automation and test & measurement fields. Basic features include a 2" x 3" open-frame construction, a universal input range of 85 – 264 VAC, 3000 VAC reinforced I/O isolation, an internal EN55032 class B filter, short circuit and overvoltage protection, IEC/EN/UL 62368-1 safety approvals and EN 61000-3-2 compliance. The TXO 45/60 series operates at full load convection cooled in the range of -20 °C to +50 °C, while the TXO 120 series operates as follows: 100 W convection / 120 W forced air -20 °C to +50 °C.	20.08.2024 14:30:00	Aug	news_2024-09-01_19.jpg	\images\news_2024-09-01_19.jpg	https://www.tracopower.com/de/txo	tracopower.com
Online EV-Charging Resource Hub	Arrow Electronics has developed and launched a res...	12077	Industry News	Online EV-Charging Resource Hub	Arrow Electronics has developed and launched a resource for EV charging for the automotive industry. Expanding its library of content, Arrow helps engineers developing the next generation of electric vehicle chargers and the corresponding software ecosystem that supports them. The hub offers design and technical support across the three electric vehicle charger categories: on-board charger, AC chargers and DC (or fast) chargers. Among the resources now available, Arrow has introduced a free eBook that delves into the latest developments in EV charging, such as costs, adapters, and the economic advantages of electric vehicles. There are also webinars available on-demand, including "Trends and Technologies for Next-Gen EV Charging Solutions".	19.08.2024 13:00:00	Aug	news_2024-09-01_8.jpg	\images\news_2024-09-01_8.jpg	https://www.arrow.com/en/ev-charging-solutions	arrow.com
eBook about Connectivity Needs and Technologies for Connected Homes	Mouser Electronics has released an eBook in collab...	12076	Industry News	eBook about Connectivity Needs and Technologies for Connected Homes	Mouser Electronics has released an eBook in collaboration with Qorvo, offering a detailed look at the connectivity requirements for smart homes and the different technologies used to support them. In Next-Gen Connectivity for Smart Living, experts from Mouser and Qorvo offer a deep dive into the technologies that underpin connectivity for smart homes, including Wi-Fi 7, ultra-wideband, and IoT standards like Zigbee, Thread, and Bluetooth Low Energy. The eBook features six different articles, each of which includes detailed infographics and links to relevant design tips from Qorvo including links to a dozen recommended Qorvo products.	19.08.2024 12:00:00	Aug	news_2024-09-01_7.jpg	\images\news_2024-09-01_7.jpg	https://resources.mouser.com/manufacturer-ebooks/qorvo-next-gen-connectivity-for-smart-living	mouser.com
Funding of up to $1.6 Billion in CHIPS and Science Act	Texas Instruments (TI) and the U.S. Department of ...	12074	Industry News	Funding of up to $1.6 Billion in CHIPS and Science Act	Texas Instruments (TI) and the U.S. Department of Commerce have signed a non-binding Preliminary Memorandum of Terms for up to $1.6 billion in proposed direct funding under the CHIPS and Science Act to support three 300 mm wafer fabs already under construction in Texas and Utah. In addition, TI expects to receive an estimated $6 billion to $8 billion from the U.S. Department of Treasury's Investment Tax Credit for qualified U.S. manufacturing investments. The proposed direct funding, coupled with the investment tax credit, would help TI provide a geopolitically dependable supply of essential analog and embedded processing semiconductors. The proposed direct funding under the CHIPS Act would support TI's investment of more than $18 billion through 2029, which is part of the company's broader investment in manufacturing. This proposed direct funding will support three new wafer fabs, two in Sherman, Texas, (SM1 and SM2) and one in Lehi, Utah (LFAB2), specifically to construct and build the SM1 cleanroom and complete pilot line for first production, to construct and build the LFAB2 cleanroom for first production and to construct the SM2 shell. They will produce semiconductors in 28 nm to 130 nm technology nodes.	16.08.2024 10:00:00	Aug	news_2024-09-01_5.jpg	\images\news_2024-09-01_5.jpg	https://news.ti.com/2024-08-16-Texas-Instruments-signs-preliminary-agreement-to-receive-up-to-1-6-billion-in-CHIPS-and-Science-Act-proposed-funding-for-semiconductor-manufacturing-in-Texas-and-Utah	ti.com
Call for Papers for the 75th ECTC	The IEEE Electronic Components and Technology Conf...	12071	Event News	Call for Papers for the 75th ECTC	The IEEE Electronic Components and Technology Conference (ECTC), a major technical conference and product exhibition for the world's semiconductor packaging industry, has announced a Call for Papers for ECTC 2025, the conference's 75th anniversary. The 75th annual ECTC will take place May 27-30, 2025 at the Gaylord Texan Resort & Convention Center in Dallas. More than 2,000 scientists, engineers and business people from more than 20 countries are expected to attend. Abstract submission has already been opened and the deadline for submissions is October 7, 2024. The ECTC 2025 technical program will address new developments, trends and applications for a broad range of topics, including components, materials, assembly, reliability, modeling, interconnect design and technology, device and system packaging, heterogeneous integration, wafer level packaging, photonics and optoelectronics, IoT, 5G, quantum computing and systems, 2.5D and 3D integration technology, and other emerging technologies in electronics packaging.	16.08.2024 07:00:00	Aug	news_2024-09-01_2.jpg	\images\news_2024-09-01_2.jpg	https://www.ectc.net/abstracts/75thCallforPapers-Web.pdf	ectc.net
High-Performance Power Module Family	SemiQ has added an S7 package to its QSiC™ f...	12087	Product Release	High-Performance Power Module Family	SemiQ has added an S7 package to its QSiC™ family of 1200 V, half-bridge MOSFET and Schottky diode SiC power modules. The parts enhance design flexibility for power engineers by providing compact, high-efficiency, high-performance options for new designs while supporting drop-in-replacement in legacy systems that require more efficient operation. This latest announcement sees the availability of a 529A MOSFET module (GCMX003A120S7B1: RdsOn 3.0 mΩ, B1 package), a 348A MOSFET module (GCMX005A120S7B1: R<sub>dsOn</sub> 4,9 mΩ, B1 package), and two low-noise SiC Schottky diode half-bridge modules (GHXS300A120S7D5 for 300 A and GHXS400A120S7D5 for 400 A) in an S7 package with industry-standard 62.0 mm footprints and a height of 17.0 mm. The package addresses the size, weight and power requirements of demanding applications ranging from induction heaters, welding equipment and uninterruptible power supplies (UPS) to photovoltaic and wind inverters, energy storage systems, high-voltage DC-DC converters and battery charging systems for electric vehicles (EVs). To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level and performs various stress. All parts have undergone testing surpassing 1400 V.	14.08.2024 13:30:00	Aug	news_2024-09-01_18.jpg	\images\news_2024-09-01_18.jpg	https://semiq.com/module-packages	semiq.com
New Semiconductor Material: AlYN promises more Energy-Efficiency	Researchers at Fraunhofer IAF (Fraunhofer Institut...	12073	Industry News	New Semiconductor Material: AlYN promises more Energy-Efficiency	Researchers at Fraunhofer IAF (Fraunhofer Institute for Applied Solid State Physics) have reported that they "made a breakthrough in the field of semiconductor materials": With Aluminum Yttrium Nitride (AlYN), they have succeeded in fabricating and characterizing a new and promising semiconductor material using the MOCVD process. Due to its excellent material properties and its adaptability to gallium nitride (GaN), AlYN is said to have "enormous potential for use in energy-efficient high-frequency and high-performance electronics for information and communications technology". AlYN shows outstanding material properties, however, the growth of the material has been a major challenge. Until now, AlYN could only be deposited by magnetron sputtering. Researchers at Fraunhofer IAF have now succeeded in fabricating the new material using metal-organic chemical vapor deposition (MOCVD) technology, thus enabling the development of new, diverse applications. The institute thinks that "with its promising material properties, AlYN could become a key material for future technological innovations". Recent research had already demonstrated the material properties of AlYN, such as ferroelectricity. In developing the new compound semiconductor, the researchers at Fraunhofer IAF focused primarily on its adaptability to gallium nitride (GaN) – especially in terms of the lattice structure.	14.08.2024 09:00:00	Aug	news_2024-09-01_4.jpg	\images\news_2024-09-01_4.jpg	https://www.iaf.fraunhofer.de/en/media-library/press-releases/new-semiconductor-material-AlYN.html	iaf.fraunhofer.de
AC Surge Protective Devices	Bourns' Model 1270 and 1280 Series Din-Rail AC Sur...	12080	Product Release	AC Surge Protective Devices	Bourns' Model 1270 and 1280 Series Din-Rail AC Surge Protective Devices (SPDs) are IEC/EN 61643-11 compliant Class I + Class II / T1+T2 SPDs, and Model 1280 features an Advanced Thermal Disconnector (TD+) for enhanced protection that eliminates the need for upstream overcurrent protection. Both model series also feature a window fault indicator and remote alarm to help monitor the operating status of the surge protector. In addition, Bourns announced its Model 1430 and 1440 Series Din-Rail DC Surge Protective Devices (SPDs). The two series are IEC/EN 61643-31 compliant Class I + Class II / T1+T2 SPDs. Designed to protect DC power systems, the 14 new models offer protection voltage ranging from 48 VDC up to 1500 VDC and feature high energy MOV technology. In addition, the Model 1440 Series features an Advanced Thermal Disconnector (TD+) as well. Both model series have a replaceable modular design, and also include a window fault indicator and remote alarm, providing enhanced surge protector operating status monitoring.	14.08.2024 06:30:00	Aug	news_2024-09-01_11.jpg	\images\news_2024-09-01_11.jpg	http://www.bourns.com/products/surge-protective-devices/dc-power-surge-protective-devices	bourns.com
Power Factor Correction Chokes für up to 3,300 W	ITG Electronics has expanded its portfolio of powe...	12083	Product Release	Power Factor Correction Chokes für up to 3,300 W	ITG Electronics has expanded its portfolio of power factor correction chokes (PFCs) with a set of solutions designed for high switching frequencies. Capable of handling up to 3,300 W the company's PFC433835B Series include CCM PFC boost converters with switching frequencies from 100 – 200 kHz. An extension of ITG Electronics' Cubic Design set of power factor correction chokes, PFC433835B Series solutions are suitable for Inductance ranges from 90 – 285 µH and have footprints up to 43 mm x 35 mm and maximum heights of 38 mm. Compared with traditional toroidal-shaped PFC chokes, the PFC433835B Series features a flat wire and square core construction to save space and increase power density. The solutions are said to be up to 50% smaller compared with toroidal-shaped PFC chokes with similar power ratings, and their flat wire technology can reduce DC resistance by as much as 40%, leading to substantially lower copper losses.	13.08.2024 09:30:00	Aug	news_2024-09-01_14.jpg	\images\news_2024-09-01_14.jpg	https://itg-electronics.com/en/series/914	itg-electronics.com
DC/DC Buck Converter deliver up to 20 A	TDK Corporation expanded its TDK-Lambda i7A series...	12082	Product Release	DC/DC Buck Converter deliver up to 20 A	TDK Corporation expanded its TDK-Lambda i7A series of non-isolated buck (step-down) DC/DC converters with the industry-standard 1/16th brick pinout. 20 A output models with a 500 W maximum rating are now available, offering a trimmable 3.3 – 32 V output capability and operation from 28 V up to 60 V input. An adjustable over-current limit is also available as an option, reducing stress on the converter or load when exposed to excessive overcurrent conditions and facilitating fine-tuning based on actual system requirements. The 20A i7A models can be used to derive additional high-power outputs at higher efficiency than isolated DC-DC converters. These products are suited for use in mobile robotics, drones, medical, industrial, test and measurement, communications, computing, and portable battery-powered equipment. Efficiencies of up to 96% minimize internal losses and allow the 20 A i7A models to operate in ambient temperatures of -40 °C up to +125 °C, even with low airflow conditions. The i7A's design provides low output ripple and excellent response to dynamic loads. All models have safety certification to the IEC/UL/CSA/EN 62368-1 standards, with CE and UKCA marking to the Low Voltage and RoHS Directives.	13.08.2024 08:30:00	Aug	news_2024-09-01_13.jpg	\images\news_2024-09-01_13.jpg	https://product.tdk.com/system/files/dam/doc/product/power/switching-power/dc-dc-converter/catalog/i7a_e.pdf	tdk.com
Intelligent Power Module for Industrial Motors up to 4 kW	Infineon Technologies expands its 7th generation T...	12081	Product Release	Intelligent Power Module for Industrial Motors up to 4 kW	Infineon Technologies expands its 7th generation TRENCHSTOP™ IGBT7 product family with the CIPOS™ Maxi Intelligent Power Module (IPM) series for low-power motor drives. The IM12BxxxC1 series is based on the TRENCHSTOP IGBT7 1200 V and rapid diode EmCon 7 technology. Thanks to the latest micro-pattern trench design, it offers exceptional control and performance. This results in significant loss reduction, increased efficiency, and higher power density. The portfolio includes three new products in variants ranging from 10 A to 20 A for power ratings of up to 4.0 kW: IM12B10CC1, IM12B15CC1 and IM12B20EC1. The IM12BxxxC1 series is packaged in a DIP 36x23D housing. It integrates various power and control components. This makes it "the smallest package for 1200 V IPMs with the highest power density and best performance in its class", the company says. The IM12BxxxC1 series is particularly suitable for low-power drives in applications such as motors, pumps, fans, heat pumps and outdoor fans for heating, ventilation, and air conditioning. The IPM series offers an isolated dual-in-line molded housing also meets the EMI and overload protection requirements of demanding designs. In addition to the protection features, the IPM is equipped with an independent UL-certified temperature thermistor.	12.08.2024 07:30:00	Aug	news_2024-09-01_12.jpg	\images\news_2024-09-01_12.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFGIP202408-135.html	infineon.com
Connect with the Advanced Battery and Electric & Hybrid Vehicle Technology Community	Join North America's largest advanced battery even...	12079	Event News	Connect with the Advanced Battery and Electric & Hybrid Vehicle Technology Community	Join North America's largest advanced battery event, The Battery Show and Electric & Hybrid Vehicle Technology Expo, October 7-10, 2024, at Huntington Place, Detroit. Discover the latest technologies and solutions from over 1,150 exhibitors including industry heavy hitters such as Dow, Parker, Hongfa America, Henkel, Honeywell, Siemens, Ampherr, Sabic, Trumpf and more across multiple sectors including automotive stationary, medical, aerospace, commercial, and industrial applications. Experience live product showcases and visit Pavilions on the show floor, including the new Lead and Recycling Pavilions, for industry-specific innovations. Enhance your knowledge with free educational sessions at the Battery Tech Theatre and Open Tech Forum. For a deeper dive, upgrade to our five-track conference covering advanced battery design, manufacturing, market forecasts, and regulatory trends. Network with over 19,000 professionals in the advanced battery and H/EV community through various expo events. Don't miss the ''Welcome to Detroit: An Electrifying Evening in the Motor City" where we celebrate the new home of The Battery Show and Electric & Hybrid Vehicle Technology Expo in Downtown Detroit. We can't wait to see you there! Register now to secure your FREE expo pass or enjoy a $100 discount on conference passes with code BOD.	10.08.2024 15:00:00	Aug	news_2024-09-01_10.jpg	\images\news_2024-09-01_10.jpg	https://register.thebatteryshow.com/37t67i	thebatteryshow.com
Automotive DC/DC Converters with "highest Power Density"	Vitesco Technologies created a new generation of D...	12078	Industry News	Automotive DC/DC Converters with "highest Power Density"	Vitesco Technologies created a new generation of DC/DC converters that are claimed to “set new standards in power density (efficiency of over 96 percent) and sustainability for power grids, power supplies, and OBC (On-Board Chargers)”. For this design Vitesco has selected the CoolGaN™ Transistors 650 V from Infineon. With GaN Transistors, Vitesco Technlogies was able to design its Gen5+ GaN Air DC/DC converters with passive cooling, which reduces the system's overall cost. The GaN devices also allow for simplified converter design and mechanical integration. As a result, the DC/DC converters can be flexibly positioned in the vehicle, reducing the workload for manufacturers. The use of GaN also allows the power of the converters to be scaled up to 3.6 kW and the power density to be increased to over 4.2 kW/l. The Gen5+ GaN Air DC/DC converters offer an efficiency of over 96 percent and improved thermal behavior compared to the Gen5 Liquid-Cooled converters. They provide a two-phase output of 248 A at 14.5 V continuous. The phases can be combined to achieve the maximum output power. Still, it is also possible to switch off one phase under partial load conditions and interleave the switching frequency between the two phases.	09.08.2024 14:00:00	Aug	news_2024-09-01_9.jpg	\images\news_2024-09-01_9.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202408-134.html	infineon.com
Partnering on new Capacitor-based Energy Storage Systems (CESS)	Flex and Musashi Energy Solutions announced an ext...	12097	Industry News	Partnering on new Capacitor-based Energy Storage Systems (CESS)	Flex and Musashi Energy Solutions announced an extensive collaboration to supply Flex-designed and manufactured Capacitor-based Energy Storage Systems (CESS) featuring Musashi's Hybrid SuperCapacitor (HSC) technology. These systems are designed to integrate with server rack power systems to address significant challenges with utility power in artificial intelligence (AI) data centers. First to market with Musashi's HSC technology, Flex has collaborated with Musashi to develop strategic technology and product development roadmaps for current and future products that enable hyperscale operators to mitigate utility power fluctuations in data centers deploying AI workloads. Flex's CESS solutions are designed to balance peak power and protect the grid from intense power surges and line disturbances during AI training and inference activities taking place in data center environments. Musashi's HSCs are designed to provide high-reliability energy storage in many applications. The technology is said to reduce equipment size, weight and total cost of ownership. The new solution is announced to offer "a significantly longer lifespan than current battery energy storage systems, with ability to provide multi-million charge/discharge cycles – essential for high-performance capacity and dependability needed in the data center". Furthermore, it provides a wide operating temperature and inherent safety as the cells are able to operate in temperature ranges from -30 to over +70 °C, plus UL 810A certification and completion of UL 9540A testing for thermal runaway at the cell level.	08.08.2024 09:30:00	Aug	news_2024-09-15_8.jpg	\images\news_2024-09-15_8.jpg	https://musashienergysolutions.com/flex-and-musashi-partner/	musashienergysolutions.com
Personnel Change in Executive Board	Peter Riedel has decided to resign from his positi...	12072	People	Personnel Change in Executive Board	Peter Riedel has decided to resign from his position as President and COO of Rohde & Schwarz for personal reasons, and he has already left the company, however, he will remain associated with Rohde & Schwarz in an advisory role. After the departure of Peter Riedel, the Executive Board of the Munich technology company now consists of Christian Leicher as President and Chief Executive Officer and CTO Andreas Pauly. For the time being, Andreas Pauly will assume the tasks of Chief Operating Officer on an interim basis. Peter Riedel had been on the Executive Board as Chief Operating Officer since 2014.	08.08.2024 08:00:00	Aug	news_2024-09-01_3.jpg	\images\news_2024-09-01_3.jpg	https://www.rohde-schwarz.com/uk/about/news-press/all-news/personnel-change-to-the-rohde-schwarz-executive-board-press-release-detailpage_229356-1512599.html?change_c=true	rohde-schwarz.com
SiC Power Semiconductor Fab in Malaysia	As global decarbonization efforts drive demand for...	12070	Industry News	SiC Power Semiconductor Fab in Malaysia	As global decarbonization efforts drive demand for power semiconductors, Infineon Technologies has officially opened the first phase of a new fab in Malaysia that will become the world's largest and most competitive 200-millimeter silicon carbide (SiC) power semiconductor fab. Malaysian Prime Minister YAB Dato' Seri Anwar Ibrahim and Chief Minister of the state of Kedah YAB Dato' Seri Haji Muhammad Sanusi Haji Mohd Nor joined Infineon CEO Jochen Hanebeck, to symbolically launch production. The highly efficient 200-millimeter SiC power fab will strengthen Infineon's role as the global leader in power semiconductors. The first phase of the fab, with an investment volume of two billion euros, will focus on the production of silicon carbide power semiconductors and will include gallium nitride (GaN) epitaxy. SiC semiconductors have revolutionized high-power applications because they switch electricity even more efficiently and enable even smaller designs. SiC semiconductors increase efficiency in electric vehicles, fast charging stations and trains as well as renewable energy systems and AI data centers. 900 high-value jobs will be created already in the first phase. The second phase, with an investment of up to five billion euros, will create the world's largest and most efficient 200-millimeter SiC power fab. Overall, up to 4.000 jobs will be created with the project.	08.08.2024 06:00:00	Aug	news_2024-09-01_1.jpg	\images\news_2024-09-01_1.jpg	https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202408-133.html	infineon.com
Electric Vehicle Charger Reference Designs	To accelerate the time to market of an EV charger,...	12085	Product Release	Electric Vehicle Charger Reference Designs	To accelerate the time to market of an EV charger, Microchip Technology now offers three flexible and scalable EV Charger Reference Designs including a Single-Phase AC Residential, a Three-Phase AC Commercial (up to 22 kW) with Open Charge Point Protocol (OCPP) and System-on-Chip (SoC) and a Three-Phase AC Commercial with OCPP and Display. Most of the active components for the EV charger reference designs are available from Microchip, including the microcontroller (MCU), analog front-end, memory, connectivity and power conversion. This significantly streamlines the integration process, enabling manufacturers to speed time to market for new charging solutions. These reference designs offer complete hardware design files and source code with software stacks that are tested and compliant to communication protocols, including OCPP. OCPP offers manufacturers a standard protocol to communicate between the charge point or charging station and a central system. This protocol is designed to enable interoperability of the charging applications regardless of the network or vendor. The EV Reference Designs are supported by MPLAB X Integrated Development Environment (IDE) to help designers minimize development time, as well as MPLAB Harmony v3 and MPLAB Code Configurator.	07.08.2024 11:30:00	Aug	news_2024-09-01_16.jpg	\images\news_2024-09-01_16.jpg	https://www.microchip.com/en-us/solutions/automotive-and-transportation/charging-station/ev-offboard-ac-charger-reference-designs	microchip.com
Series of Wire-Wound Ferrites extended	Würth Elektronik now offers its WE-RFI inductors i...	12084	Product Release	Series of Wire-Wound Ferrites extended	Würth Elektronik now offers its WE-RFI inductors in sizes 0402 and 0603, which can be used as inductors for RF applications or as ferrites for interference suppression. Here the manufacturer responds to increasing miniaturization and complements the existing sizes 0805 and 1008. The components are suitable as low-pass filters (for filtering high-frequency noise), data line filters, supply voltage decoupling, low-frequency radio applications, and RFID. As wire-wound ferrites, the WE-RFI inductors attain higher impedances than normal ferrites, even at high frequencies, and over a wider bandwidth. Unlike multilayer ferrites, they show no DC bias behavior. As RF inductors, they offer high inductance values from 20 nH up to 47 µH. They are characterized by low RDC and consequently a high rated current of up to 1.91 A at ΔT = 40 K. A design kit is available for this component group, which Würth Elektronik will always replenish free of charge, so developers always have inductances of different values to hand.	07.08.2024 10:30:00	Aug	news_2024-09-01_15.jpg	\images\news_2024-09-01_15.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-rfi	we-online.com
High-Power Semiconductor Company: President Change	Dominic Dorfner will take over as president Semikr...	12056	People	High-Power Semiconductor Company: President Change	Dominic Dorfner will take over as president Semikron Danfoss, when Claus A. Petersen retires on August 31, after 40 years in the Danfoss Group. He has been leading Danfoss Silicon Power and Semikron Danfoss for the last 26 years. Dominic Dorfner has been named new president of the company and will start working in his new position on September 1, 2024. He joined Semikron Danfoss in 2021 as head of the industry business in Danfoss Silicon Power, and for the past 13 months he has been leading the automotive division in Semikron Danfoss. Though now retiring as company president, Claus A. Petersen is not completely leaving Semikron Danfoss, as he has joined the board of directors.	07.08.2024 07:00:00	Aug	news_2024-08-15_2.jpg	\images\news_2024-08-15_2.jpg	https://www.semikron-danfoss.com/about-semikron-danfoss/news-press/detail/claus-a-petersen-retiring-from-semikron-danfoss-and-has-joined-the-board-of-directors-dominic-dorfner-named-new-president.html	semikron-danfoss.com
President of Energy Business	Effective from the beginning of August 2024, Per E...	12059	People	President of Energy Business	Effective from the beginning of August 2024, Per Erik Holsten is the president of ABB Energy Industries. He moves into the role from the position of hub manager for Northern Europe at ABB Energy Industries. Per Erik succeeds Brandon Spencer, who has become president of the ABB Motion business area. Per Erik offers vast experience within the energy sector, from traditional sources through to key energy transition industries including hydrogen, offshore wind and Power-to-X. Per Erik Holsten holds an MBA of International Business from the University of East London, UK. He also studied Engineering at Sør-Trøndelag University College (HiST), Norway. He is based in Oslo, Norway.	05.08.2024 10:00:00	Aug	news_2024-08-15_5.jpg	\images\news_2024-08-15_5.jpg	https://new.abb.com/process-automation/energy-industries	abb.com
SiC MOSFETs for High-Voltage Drives in EVs	With three half-bridge modules in SiC MOSFET techn...	12062	Product Release	SiC MOSFETs for High-Voltage Drives in EVs	With three half-bridge modules in SiC MOSFET technology, the manufacturer StarPower is expanding its range of power semiconductors for use in the drivetrain of electric vehicles. The devices, dubbed MD19HFC120N6HT, MD22HFC120N6HY and MD29HFC120N6HT, are characterized by a blocking voltage (V<sub>DSS</sub>) of 1200 V. This means that the products can be used in environments with an 800 V on-board power supply. The individual models of the MOSFET family differ in their on-resistance (R<sub>DS(ON)</sub>), which covers the range between 1.8 m&ohm; and a maximum of 2.82 m&ohm; depending on the type. All models in this product family can be connected in parallel to increase the current. These MOSFETS are supplied in a 2-in-1 housing, which is optimized for low parasitic inductance in order to suppress unwanted oscillation tendencies. Heat loss is dissipated via a solid copper base plate with PINFIN structures for optimum cooling. The ceramic material silicon nitride (S<sub>3</sub>N<sub>4</sub>) is used as the carrier substrate, employing the sophisticated AMB (Active Metal Brazing) process.	05.08.2024 08:30:00	Aug	news_2024-08-15_8.jpg	\images\news_2024-08-15_8.jpg	https://www.starpowereurope.com/en/products	starpowereurope.com
32-bit-DSCs with more Peripherals for Power Applications	Microchip has launched its dsPIC33A Core family of...	12060	Product Release	32-bit-DSCs with more Peripherals for Power Applications	Microchip has launched its dsPIC33A Core family of Digital Signal Controllers (DSCs) which well-suited for motor control, power supply, charging and sensing systems. Built around a 32-bit CPU architecture with a 200 MHz operating speed, the DSC family's core includes a Double-Precision Floating-Point Unit (DP FPU) and DSP instructions for numerically intensive tasks in many closed-loop control algorithms. The architecture enables real-time control coupled with a comprehensive development tool ecosystem to streamline and accelerate the design process. The DSCs provide additional math and data processing, higher code efficiency, faster context switching and reduced latency than former members of the family. This allows for a faster response time to transient and safety-critical events. New and upgraded peripherals - such as high-resolution PWMs specifically engineered for motor control and digital power conversion - are designed to support progressive technology development in various markets including automotive, industrial, consumer, E-Mobility, data center and sustainable solutions segments. The dsPIC33A family features integrated analog peripherals, including 12-bit ADCs capable of conversion rates up to 40 Msps, comparators and operational amplifiers. These analog peripherals, in conjunction with Core Independent Peripherals (CIPs), allow for sophisticated sensing and high-performance control. In addition, the CIPs enable interaction among the peripherals without the need for CPU involvement.	30.07.2024 06:30:00	Jul	news_2024-08-15_6.jpg	\images\news_2024-08-15_6.jpg	https://www.microchip.com/en-us/about/news-releases/products/microchip-technology-introduces-a-new-core-in-the-dspic	microchip.com
High-Current Inductor for Automotive Applications	Würth Elektronik offers WE-LHCA (Low Profile High ...	12069	Product Release	High-Current Inductor for Automotive Applications	Würth Elektronik offers WE-LHCA (Low Profile High Current Automotive Inductor) – a particularly flat and temperature-tough inductor in four sizes with different inductance values. The power inductors are designed for an extended temperature range of -55 to +155 °C and are constructed to avoid thermal degradation. The AEC-Q200-certified inductor is suitable for applications such as high-current power supplies, start-stop systems, power distribution modules, on-board chargers, infotainment or HVAC systems. The members of this inductor family are available in the following sizes: 7030 (L = 0.47 - 22 µH), 1040 (L = 1 - 68 µH), 1365 (L = 1 - 47 µH) and 1770 (L = 4.7 - 82 µH). These components feature a low-profile shielded construction with a distributed air gap in iron alloy powder.	25.07.2024 15:30:00	Jul	news_2024-08-15_15.jpg	\images\news_2024-08-15_15.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-lhca	we-online.com
Aluminum Polymer rectangular Capacitors for 48 V	KEMET's aluminum polymer rectangular capacitors of...	12068	Product Release	Aluminum Polymer rectangular Capacitors for 48 V	KEMET's aluminum polymer rectangular capacitors of the APL90 series are now available from Rutronik. The capacitors are AEC-Q200 qualified and are particularly suitable for meeting the requirements of 48 V vehicle applications and platforms. The APL90 series currently offers a capacitance of 1,100 µF, a rated voltage of 63 VDC, as well as 20 g vibration resistance and ripple current capability up to 26 A. An important area of application for the APL90 series is the automotive sector, e. g. as a DC link in 48 V inverters for mild hybrid electric vehicles (MHEVs). These capacitors are suited for use in data centers, e. g. as input capacitors in power supply units for 48 V systems. Suitable for use at operating temperatures from -55 °C to +125 °C, the component is shaped for efficient arrangement in modules and can be positioned both horizontally and vertically. Its lifetime is specified with 2,000 hours at +125 °C (with V<sub>R</sub> and I<sub>R</sub> applied).	25.07.2024 14:30:00	Jul	news_2024-08-15_14.jpg	\images\news_2024-08-15_14.jpg	https://www.rutronik.com/article/for-48-v-applications-rutronik-introduces-the-new-aluminum-polymer-rectangular-capacitors-of-the-apl90-series-from-kemet	rutronik.com
Thermal Pads Protect EV Battery Packs	The Chomerics Division of Parker Hannifin has intr...	12066	Product Release	Thermal Pads Protect EV Battery Packs	The Chomerics Division of Parker Hannifin has introduced its THERM-A-GAP™ PAD 30 thermally conductive gap filler pads for EV battery packs that fits seamlessly into robotic assembly processes. THERM-A-GAP PAD 30 thermally conductive gap filler pads for EV battery pack applications are claimed to “provide exceptional performance and conformability”. During assembly, vision sensors can see THERM-A-GAP pads which enables effective quality control and fast production. The pads release directly from their liner for pick-and-place robots, making them well-suited for high-volume applications, and come in specially designed packaging to ensure safe shipment. The pads provide a soft (34 Shore 00) solution with 3.2 W/m-K of thermal conductivity and are claimed to offer low outgassing, ensuring an effective thermal interface between heat sinks and electronic devices where there are uneven surfaces, air gaps and rough surface textures. The supporting electrical properties of this RoHS-compliant thermal gap filler pad include: 5.9 kV<sub>AC</sub>/mm dielectric strength (ASTM D149 test method), 10<sup>13</sup> &ohm;cm volume resistivity (ASTM D257), 7.7 dielectric constant at 1,000 kHz (ASTM D150) and 0.001 dissipation factor at 1,000 kHz (Chomerics CHO-TM-TP13).	25.07.2024 12:30:00	Jul	news_2024-08-15_12.jpg	\images\news_2024-08-15_12.jpg	https://www.parker.com/us/en/divisions/chomerics-division/industries/automotive/error-proofing-tim-application-for-ev-battery-packs.html?	parker.com
High Current Three Phase EMC Filter	The chassis mounting three phase EMC filter series...	12064	Product Release	High Current Three Phase EMC Filter	The chassis mounting three phase EMC filter series MF423-3-3D-BB from EMIS is designed for higher current rating applications such as photovoltaic (PV) and power drive systems to meet relevant EMC Standards. Installed on the mains input side of equipment the filters improve conducted immunity and reliability. The devices are fitted with busbar termination. Other applications include inverters and converters, industrial three-phase systems and power supplies, large UPS, wind turbines, factory and building automation. Standard features include an operating voltage of 440/520 V<sub>AC</sub>, a current rating of 300 A to 1000 A at 40°C, 50/60 Hz operating frequency within the operating temperature range between -25 °C and +85°C. The climatic category is 25/85/21.	25.07.2024 10:30:00	Jul	news_2024-08-15_10.jpg	\images\news_2024-08-15_10.jpg	https://emisglobal.com/products/emi-filters/three-phase/three-stage/mf-423-3-3d-bb/	emisglobal.com
High-Current eFuse with integrated Auto-Reset	Nexperia announced the NPS3102A and NPS3102B elect...	12063	Product Release	High-Current eFuse with integrated Auto-Reset	Nexperia announced the NPS3102A and NPS3102B electronic fuses (eFuses). These low-ohmic (17 mΩ), high current (13.5 A), resettable electronic fuses help to protect downstream loads from exposure to excessive voltages while also protecting power supplies from load faults and large inrush currents. They have been designed for use in various 12 V hot-swap applications including enterprise communication and storage equipment found in data centers such as drives, servers, ethernet switches and routers as well as to protect mobile communications infrastructure and industrial automation equipment like PLCs. The eFuses operate in the input voltage range up to 21 V. They are equipped with an integrated low-resistance pass MOSFET which minimizes voltage drop and power loss. The current clamp limit can be adjusted in the 2–13.5 A range using a resistor at the ILIM pin, which can also be used to measure load current in real time. Both devices include a built-in overvoltage clamp limiting the output voltage during an input overvoltage condition, with a 2 µs short-circuit protection response time. The pass-FET in the NPS3102A must be manually reset after a fault event whereas the NPS3102B integrates an auto-retry block, which safely attempts to re-enable the pass-FET without the need for user intervention.	25.07.2024 09:30:00	Jul	news_2024-08-15_9.jpg	\images\news_2024-08-15_9.jpg	https://www.nexperia.com/about/news-events/press-releases/nexperia-adds-new-high-current-efuse-with-superior-current-limiting-accuracy-to-its-power-device-portfolio	nexperia.com
4.5 kW Power Supply for AI GPU Racks	Navitas Semiconductor released its 4.5 kW AI data ...	12048	Product Release	4.5 kW Power Supply for AI GPU Racks	Navitas Semiconductor released its 4.5 kW AI data center power supply reference design, with GaNSafe™ and Gen-3 'Fast' (G3F) SiC power components. The design is claimed to "enable the world's highest power density with 137 W/in³ and over 97% efficiency". Next-generation AI GPUs like NVIDIA's Blackwell B100 and B200 each demand over 1 kW of power for high-power computation, 3x higher than traditional CPUs. These new demands are driving power-per-rack specifications from 30 - 40 kW up to 100 kW. The latest 4.5 kW CRPS185 design demonstrates how GaNSafe power ICs and GeneSiC™ Gen-3 'Fast' (G3F) MOSFETs enables highest power density and efficiency solution. At the heart of the design is an interleaved CCM totem-pole PFC using SiC with full-bridge LLC topology with GaN, where the fundamental strengths of each semiconductor technology are exploited for the highest frequency, coolest operation, optimized reliability and robustness, and highest power density and efficiency. The 650 V G3F SiC MOSFETs feature 'trench-assisted planar' technology which delivers "world-leading performance over temperature for the highest system efficiency and reliability in real-world applications". With a 3.2 kW power supply on the market Navitas plans to introduce an 8.5 kW design in September.	25.07.2024 09:30:00	Jul	news_2024-08-01_13.jpg	\images\news_2024-08-01_13.jpg	https://navitassemi.com/navitas-overcomes-ai-challenges-with-worlds-highest-power-density-data-center-design/	navitassemi.com
Second Generation of 1200V SiC MOSFET for High Performance Applications	Power Master Semiconductor has released the 2nd ge...	12061	Product Release	Second Generation of 1200V SiC MOSFET for High Performance Applications	Power Master Semiconductor has released the 2nd generation of the 1200V <i>e</i> SiC MOSFET, which is intended for applications such as DC EV charging stations, solar inverters, energy storage systems, motor drives and industrial power supplies. The 1200 V devices are claimed to “offer e. g. higher power density, efficiency and less cooling effort due to its much lower power losses”. FOM characteristics such as gate charge (Q<sub>G</sub>), stored energy in output capacitance (EOSS), reverse recovery charger (Q<sub>RR</sub>) and output charge (Q<sub>OSS</sub>) are improved by up to 30 % compared to previous generation. All devices are 100 % tested in terms of avalanche capability. Due to its lower miller capacitance (Q<sub>GD</sub>) it achieved 44 % lower switching losses than the previous generation.	25.07.2024 07:30:00	Jul	news_2024-08-15_7.jpg	\images\news_2024-08-15_7.jpg	https://www.powermastersemi.com/product/product04.html	powermastersemi.com
Supply Chain for Power Devices based on AlN established	In order to make the ultra-wide band gap (UWBG) te...	12043	Industry News	Supply Chain for Power Devices based on AlN established	In order to make the ultra-wide band gap (UWBG) technology AlN accessible to industry in the medium term, the related existing activities in Germany have been combined in a strategic cluster. The aim is to establish a German value chain for AlN-based technology and to build up an international leadership position in this increasingly economically important field. The Ferdinand-Braun-Institut (FBH), the Fraunhofer Institute for Integrated Systems and Device Technology IISB and the company III/V-Reclaim PT GmbH drive this initiative together. They cover the entire value chain, starting with the growth of AlN crystals using the Physical Vapor Transport (PVT) process, to wafering and polishing of epi-ready AlN-wafers, and the epitaxy of the functional device layers, up to the fabrication of transistors for power electronics and millimeter-wave applications. For the first time, the consortium has now successfully demonstrated the practical implementation of a value chain for AlN devices in Germany and Europe. The first transistor generations produced with these wafers already show promising electrical properties, such as a breakdown voltage of up to 2200 V and a power density superior to SiC as well as GaN-based power-switching devices. Compared to established silicon devices, AlN/GaN HEMTs, as they have now been successfully produced on AlN wafers, offer up to three thousand times less conduction losses than with silicon and are around ten times more efficient than SiC transistors.	24.07.2024 13:00:00	Jul	news_2024-08-01_8.jpg	\images\news_2024-08-01_8.jpg	https://www.iisb.fraunhofer.de/en/press_media/press_releases/pressearchiv/archiv_2024/AlN-value-chain.html	iisb.fraunhofer.de
SEMICON Southeast Asia 2025 to be Held in Singapore	SEMICON Southeast Asia will return to its roots in...	12058	Event News	SEMICON Southeast Asia 2025 to be Held in Singapore	SEMICON Southeast Asia will return to its roots in Singapore in 2025 to commemorate its 30th anniversary. With more than 18,000 delegates expected to attend from the region and around the world, SEMICON Southeast Asia has become a key platform for industry leaders, innovators, and decision-makers to connect, collaborate, and drive innovation. This special edition of the event will take place at Sands Expo & Convention Centre from 20 – 22 May 2025. Themed "Stronger Together", SEMICON Southeast Asia 2025 will feature insights into the latest industry developments, trends and innovations, and critical areas including sustainability, artificial intelligence (AI), chiplet technology, and workforce development. Since 2015, SEMICON Southeast Asia has been hosted in Malaysia, contributing significantly to the growth and advancement of the semiconductor industry in the region.	24.07.2024 09:00:00	Jul	news_2024-08-15_4.jpg	\images\news_2024-08-15_4.jpg	https://www.semiconsea.org/	semiconsea.org
Varistor Series Offers Surge Current Protection up to 6,000 A	KOA Speer Electronics introduces the NV73S series ...	12052	Product Release	Varistor Series Offers Surge Current Protection up to 6,000 A	KOA Speer Electronics introduces the NV73S series multilayer type metal oxide varistor that handles a surge current of up to 6,000 A, which is five times higher than existing products. The multilayer construction can absorb a large surge. The two-way symmetries can absorb positive and negative surges. The NV73S replaces the NV732E (1210) through 2L (2220) due to its improved surge protection. Maximum peak current and sizes for the new NV73S are 400 to 800 A (1210), 500 to 1,200 A (1812), and 1,500 to 6,000 A (2220) with a working voltage range of 6 to 95 V (AC) and 9 to 127 V (DC). The varistor voltage range for the NV73S series is 12 to 150 V. The NV73S series metal oxide varistor offers protection from ESD and EMI. It also provides surge protection for motors, relays, and solenoid valves. It meets EU-RoHS requirements.	23.07.2024 13:30:00	Jul	news_2024-08-01_17.jpg	\images\news_2024-08-01_17.jpg	https://www.koaspeer.com/news/1970/110/KOA_Speers_New_Varistor_Series_Offers_Surge_Current_Protection_Up_to_6000A_NV73S_Series/	koaspeer.com
Supply Agreement: SiC MOSFETs for EVs	onsemi has signed a multi-year deal with Volkswage...	12036	Industry News	Supply Agreement: SiC MOSFETs for EVs	onsemi has signed a multi-year deal with Volkswagen Group to be the primary supplier of a complete power box solution as part of its next-generation traction inverter for its Scalable Systems Platform (SSP). The solution features silicon carbide-based technologies in an integrated module that can scale across all power levels – from high power to low power traction inverters to be compatible for all vehicle categories. Based on the EliteSiC M3e MOSFETs, onsemi's power box solution is said to be able to handle more power in a smaller package which significantly reduces energy losses. The inclusion of three integrated half-bridge modules mounted on a cooling channel will further improve system efficiency by ensuring heat is effectively managed from the semiconductor to the coolant encasement. This leads to better performance, improved heat control, and increased efficiency, allowing EVs to drive further on a single charge.	22.07.2024 06:00:00	Jul	news_2024-08-01_1.jpg	\images\news_2024-08-01_1.jpg	https://investor.onsemi.com/news-releases/news-release-details/onsemi-selected-power-volkswagen-groups-next-generation-electric	onsemi.com
SiC Modules for Power Grid Batteries	Infineon Technologies announced that its CoolSiC&t...	12057	Industry News	SiC Modules for Power Grid Batteries	Infineon Technologies announced that its CoolSiC™ 2000 V modules have been selected by Daihen Corporation for their unit-type power conditioners for grid storage batteries. The unit-type power conditioner for grid storage batteries launched by Daihen earlier this year is the first product in the industry to achieve connection to storage batteries at a high DC link voltage of 1500 V. The higher voltage enables the product to be used with large-capacity storage battery facilities, which has resulted in a 40 percent reduction in the footprint of grid storage batteries compared to the conventional product. The higher power density is achieved by using Infineon's 62 mm CoolSiC MOSFET 2000 V module FF3MR20KM1H. In addition to the characteristics of SiC that enable high voltage, better thermal dissipation and high power density, Infineon's SiC products feature M1H trench technology that increases the gate drive voltage range and provides high robustness and reliability against gate voltage spikes.	19.07.2024 08:00:00	Jul	news_2024-08-15_3.jpg	\images\news_2024-08-15_3.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFGIP202407-026.html	infineon.com
150 V N-Channel Power U-MOS X-H MOSFETs	Toshiba Electronics Europe adds two 150 V N-channe...	12065	Product Release	150 V N-Channel Power U-MOS X-H MOSFETs	Toshiba Electronics Europe adds two 150 V N-channel power MOSFET products based upon their U-MOS X-H Trench process. The TPH1100CQ5 and TPH1400CQ5 devices are designed specifically for use in high-performance switching power supplies, such as those used in data centers and communication base stations as well as other industrial applications. With a maximum drain-source voltage (V<sub>DSS</sub>) rating of 150 V and drain current (I<sub>D</sub>) handling of 49 A (TPH1100CQ5) and 32A (TPH1400CQ5), the devices feature a maximum drain-source on-resistance (R<sub>DS(ON)</sub>) of 11 m&ohm; and 14 m&ohm;, respectively. The reverse recovery charge (Qrr) of TPH1400CQ5 is 27 nC (typ.), and the typical reverse recovery time (trr) is 36 ns. Used in synchronous rectification applications, the TPH1400CQ5 reduces the power loss of switching power supplies and helps improve efficiency. When used in a circuit that operates in reverse recovery mode, the new products reduce spike voltages generated during switching, helping to improve EMI characteristics. The devices are housed in a surface-mount SOP Advance(N) package measuring 4.9 mm x 6.1 mm x 1.0 mm. A G0 SPICE model for rapid verification of the circuit function as well as highly accurate G2 SPICE models, for accurate reproduction of transient characteristics are also available.	18.07.2024 11:30:00	Jul	news_2024-08-15_11.jpg	\images\news_2024-08-15_11.jpg	https://toshiba.semicon-storage.com/eu/company/news/2024/07/mosfet-20240718-1.html	toshiba.semicon-storage.com
Memorandum of Understanding to stimulate sustainable Action across the Supply Chain	Infineon Technologies has signed a Memorandum of U...	12038	Industry News	Memorandum of Understanding to stimulate sustainable Action across the Supply Chain	Infineon Technologies has signed a Memorandum of Understanding with Amkor Technology, a provider of semiconductor packaging and test services, with a joint commitment to stimulate decarbonization and sustainability strategies across the supply chain. Expanding their partnership towards sustainability is the next step in the sustainability journey of both companies. Infineon and Amkor intend to fully leverage their classical Outsourced Semiconductor Assembly and Test (OSAT) business relationship in order to effectively tackle emissions along their supply chain. In April, both companies announced to operate a dedicated packaging and test center at Amkor's manufacturing site in Porto, Portugal. As part of the cooperation for climate protection, Infineon and Amkor will actively engage with common suppliers to help them develop and implement effective decarbonization strategies. This will involve workshops, meetings, and the sharing of best practices and learnings related to decarbonization. The aim is to identify areas for improvement and support suppliers in setting science-based emissions reduction targets in line with the Science Based Targets initiative. Both companies are committed to providing ongoing guidance, fostering exchange, and tracking progress to drive continuous improvement across the common supply chain.	18.07.2024 08:00:00	Jul	news_2024-08-01_3.jpg	\images\news_2024-08-01_3.jpg	https://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202407-025.html	infineon.com
PCIM Europe 2025: Call for Papers	Starting now, experts from the realms of business ...	12044	Event News	PCIM Europe 2025: Call for Papers	Starting now, experts from the realms of business and academia can submit their abstracts on a wide range of topics in power electronics for a chance to speak at the PCIM Conference 2025. This call for papers will be open until 15 October 2024. The PCIM Conference gives authors of first-time publications the opportunity to present their work to an international audience of more than 900 representatives from the business and scientific sides of power electronics. All those accepted will have their articles published in the PCIM Conference proceedings and databases like IEEE Xplore, IET Inspec Direct, Knovel, and Scopus. In addition, presenters at the PCIM Conference will benefit from the immediate feedback they receive from both the industry and the academic world – and they will be able to make a number of contacts in the power electronics community in the process. The PCIM Conference offers a several options to present: From 20-minute talks on the conference stages via poster presentations offering direct interaction directly with other attendees up to half-day seminars. This year's best submissions will be recognized in five categories by the Best Paper Award, the Young Engineer Award, and the Young Researcher Award.	17.07.2024 14:00:00	Jul	news_2024-08-01_9.jpg	\images\news_2024-08-01_9.jpg	https://pcim.mesago.com/nuernberg/en/press/press-releases/pcim-press-releases/callforpapers25.html	pcim.com
Testing Procedure for Determining Dielectric Strength	Würth Elektronik has developed a testing procedure...	12040	Industry News	Testing Procedure for Determining Dielectric Strength	Würth Elektronik has developed a testing procedure for determining the maximum operating voltage of molded inductors. The manufacturer of electronic and electromechanical components introduces developers to the electrical property of dielectric strength and what happens if it is exceeded in an application note. The molded inductors from the Power Magnetics product portfolio (e. g., WE-MAPI, WE-XHMI, WE-LHMI) are now successively supplemented with the value of the maximum operating voltage V<sub>op</sub> as a new parameter in the specifications. Based on the testing procedure, Würth Elektronik defines the maximum operating voltage V<sub>op</sub> in its data sheets. This represents the voltage at which an inductor can be operated continuously in the application without impairing performance, risking damage or overheating the inductor. The operating voltage is therefore a limit value for the input voltage, up to which the inductor can be used reliably in an application without irreversible damage. The test concept examines the behavior of inductors up to their voltage limits under realistic conditions in a DC/DC full-bridge converter (voltage transients of up to 60 V/ns and frequencies of up to 2 MHz). The approximate voltage limit is firstly evaluated using a short-term test. The operating voltage is then defined on this basis and verified in a long-term test.	17.07.2024 10:00:00	Jul	news_2024-08-01_5.jpg	\images\news_2024-08-01_5.jpg	https://www.we-online.com/en/news-center/press/press-releases?d=voltage-specification	we-online.com
Magnetic Packaging Technology for Power Modules: Cutting Size in half	Texas Instruments (TI) introduced six power module...	12051	Product Release	Magnetic Packaging Technology for Power Modules: Cutting Size in half	Texas Instruments (TI) introduced six power modules designed to improve power density, enhance efficiency and reduce EMI. These power modules leverage TI's proprietary MagPack™ integrated magnetic packaging technology, "shrinking their size by up to 23% compared to competing modules", enabling designers of industrial, enterprise and communications applications to achieve previously impossible performance levels. In fact, three of the six devices, the TPSM82866A, TPSM82866C and TPSM82816, are claimed to be "the industry's smallest 6 A power modules, supplying a power density of nearly 1A per 1 mm<sup>2</sup> of area". The magnetic packaging technology includes an integrated power inductor with proprietary, newly engineered material. As a result, engineers can now reduce temperature and radiated emissions while reducing both board space and system power losses. This is especially important in applications such as data centers, where electricity is the biggest cost factor, with some analysts predicting a 100% increase in demand for power by the end of the decade.	16.07.2024 12:30:00	Jul	news_2024-08-01_16.jpg	\images\news_2024-08-01_16.jpg	https://news.ti.com/2024-07-16-TI-pioneers-new-magnetic-packaging-technology-for-power-modules,-cutting-power-solution-size-in-half	ti.com
3-Phase Brushless Gate Driver with Power Module and Sleep Mode	Microchip has launched the MPC8027, a 3-phase brus...	12045	Product Release	3-Phase Brushless Gate Driver with Power Module and Sleep Mode	Microchip has launched the MPC8027, a 3-phase brushless gate driver module with a typical sleep-mode current of 5 µA. MCP8027 integrates three half-bridge drivers to drive external NMOS/NMOS transistor pairs configured to drive a 3-phase BLDC motor, a comparator, a voltage regulator to provide bias to a companion microcontroller, power monitoring comparators, an overtemperature sensor, two level translators and three operational amplifiers for motor current monitoring. The MCP8027 buck converter is capable of delivering 750 mW of power - may be disabled if not used - for powering a companion microcontroller. The onboard 5 V and 12 V LDO regulators are capable of delivering 30 mA of current. The MCP8027 operation is specified over a temperature range of -40°C to +150°C. Package options include the 40-lead 5x5 QFN and 48-lead 7x7 TQFP. For 100 ms the transient voltage tolerance is 48 V. Thermal warning and shutdown are also integrated.	15.07.2024 06:30:00	Jul	news_2024-08-01_10.jpg	\images\news_2024-08-01_10.jpg	https://www.microchip.com/en-us/product/MCP8027	microchip.com

Bodo's News

125 V High-Side Gate Driver: Protection by Disconnecting

BMS Solutions based on 100 V Bi-directional GaN Technology

Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection

High Frequency GaN Inverter Demonstrator for Automotive

Finalists are Selected for PSMA's Inaugural Global Energy Efficiency Award

Silicon Capacitor Production Line opened in France

Shaping the Future of Heat Control Solutions

Current Sensors for Use in DAQ Systems with integrated Burdon Transistor

Power Semiconductors now supplied from 12-inch Wafers

Current-compensated Chokes for Vertical PCB Mounting

MLCCs with Voltage Rating up to 2000 V

DC EMC Filter for High Power EV Charging Applications

Ideal Diode Protection Switch with LPS for USB-C Applications

1200 V SiC Schottky Barrier Diodes

Meeting future Energy Demands

4th Generation of SiC MOSFETs for up to 1200 V

Module Provider supports local Sports Team

Research: Isolating Piezoelectric DC/DC Converters Without Transformers

Medical Power Supplies meet CF Requirements

Working together for Biodiversity with Electronics and AI

Hall-Effect Dual Latch Sensor

Research: Lithium-Metal Battery with Solid Electrolyte achieves 1070 Wh/L

N-Channel MOSFETs for 40 – 100 V

Design and Service Center in the Greater Boston Area

Insights into Design Challenges of Motor Control

US Funding for WBG Power Projects

Strategic Alliance regarding Semiconductor Ecosystem in India

Office in the heart of Southeast Asia

Silicon Valley Design and Innovation Centre

Micro DC/DC Stepup Converter operate from 0.9 V

Assuring Electromagnetic Compatibility in Australia

2024 ASCM Award of Excellence

Current Sensors for up to 800 A delivering 1 MHz Bandwidth

World's first 300 mm Power Gallium Nitride (GaN) Technology

Transformers for Power Line Communication

Industrial 3 kW programmable Power Supplies

Automotive-qualified Small Signal MOSFETs in tiny Packages

30 V Power MOSFETs for Mass Market Applications

2" x 4" 250 W Medical and Industrial Power Supply Series

40 V MOSFETs in PDFN 33 Packages

2300V Baseplate-less SiC Power Modules

Executive Vice President for German Electronics Specialist

Long-Term Supply Agreement for SiC Power Devices signed

Acquisition of Austrian Power Supply Company

Gen-3 Fast SiC to now qualified according to AEC Q101

Dual 5 A Low-Side MOSFET Gate Drivers for High-Frequency Applications

Evaluation Board for 240 W PD 3.1 Charger with Efficiency >95 %

electronica 2024: The electronics Trade Show turns 60

PCIM Asia 2024 grew significantly

Power Factor Correction Chokes für up to 1000 VDC

Medically approved 4:1 input DC/DC Converters

Current Sensors achieve ASIL C(D) Compliance

240 V/1 kA Bidirectional Power TVS Diode in a Surface Mount Package

European GaN Company establishes Asian Subsidiary

Intelligent Power Device for BLDC Motor Drives

Absorber Patch Attenuates like a Shielding Cabinet

Joining the Global Battery Alliance

Investment in additional R&D Capabilities in Europe and Asia

Ideal Diodes in small TSSPs

MOSFETs in SMD Package for High Performance Applications

Industrial AC/DC Power Supplies in 2" x 3" Packages

Online EV-Charging Resource Hub

eBook about Connectivity Needs and Technologies for Connected Homes

Funding of up to $1.6 Billion in CHIPS and Science Act

Call for Papers for the 75th ECTC

High-Performance Power Module Family

New Semiconductor Material: AlYN promises more Energy-Efficiency

AC Surge Protective Devices

Power Factor Correction Chokes für up to 3,300 W

DC/DC Buck Converter deliver up to 20 A

Intelligent Power Module for Industrial Motors up to 4 kW

Connect with the Advanced Battery and Electric & Hybrid Vehicle Technology Community

Automotive DC/DC Converters with "highest Power Density"

Partnering on new Capacitor-based Energy Storage Systems (CESS)

Personnel Change in Executive Board

SiC Power Semiconductor Fab in Malaysia

Electric Vehicle Charger Reference Designs

Series of Wire-Wound Ferrites extended

High-Power Semiconductor Company: President Change

Power Factor Correction Chokes für up to 1000 V_DC