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Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

Large-size Ferrite Cores with different Shapes

Learn more:
tdk-electronics.tdk.com

Product Release
2025-07-24

TDK Corporation added large-size ferrite cores with different core shapes. These are used in a range of industrial applications such as motor drives, EV charging stations, various railway/traction applications, power transformers, welding, medical, uninterruptible power supplies (UPS), solar inverters, and other renewable energy applications. These cores allow for optimizing magnetic design for efficiency and thermal performance. The standardized large-size core program contains E, U, I, PM, and PQ cores in the N27, N87, N88, N92, N95, and N97 power materials. Accessories like coil former and mounting hardware are available.

Company Location in South Africa added

Learn more:
we-online.com

Industry News
2025-07-24

Another Würth Elektronik branch opened in Brackenfell, Western Cape, South Africa. The location operates under the name Wurth Electronics South Africa (Pty.) Ltd and will serve local customers, but will also be responsible for the markets of Botswana, Mauritius, Namibia, Tanzania and Zambia. Ahmet Çakir, who also heads the branch in Turkey, will take over the management of the new location, under the leadership of Rob Sperring, Vice President for Southern Europe, Middle East and Africa. The Wurth Electronics South Africa (Pty.) Ltd team currently consists of six employees. However, it will soon be expanded. The official opening ceremony for the new location will take place in early 2026. Four EMC seminars held by Würth Elektronik in South Africa's two largest cities, Cape Town and Johannesburg, have already been completed.

Professorship to Accelerate Wide Bandgap Semiconductor Research

Learn more:
nexperia.com

Industry News
2025-07-18

Global semiconductor manufacturer Nexperia and the Hamburg University of Technology (TU Hamburg) have launched an endowed professorship in power electronic devices – a crucial field for the advancement of energy-efficient technologies. The position, held by Prof. Dr.-Ing. Holger Kapels will drive research into next-generation semiconductor components and train highly skilled engineers at TU Hamburg’s School of Electrical Engineering, Computer Science and Mathematics. As part of this initiative, Prof. Kapels will also lead the newly founded Institute for Power Electronic Devices. In his inaugural lecture, titled "Innovative Power Semiconductor Devices as a Key Technology for an Electrified Future," Prof. Kapels outlined how compound semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) are enabling transformative improvements in energy efficiency – particularly in electric vehicles, industrial systems, and data centers. Wide bandgap (WBG) materials such as SiC, GaN, and aluminum scandium nitride (AlScN) allow for higher switching frequencies, lower conduction losses, and more compact device footprints. compared to traditional silicon. The new institute will focus on power semiconductors based on Silicon, SiC, GaN and aluminum scandium nitride (AlScN), new device architectures, including vertical GaN structures and machine-learning-based fault prediction systems. Additional research priorities include modeling the reliability and ruggedness of power devices under extreme operating conditions.

Two-Component Thermal Gap Filler and CIP Material

Learn more:
ph.parker.com

Product Release
2025-07-17

The Chomerics Division of Parker Hannifin Corporation introduced a two-component (2k) dispensable thermal gap filler and cure-in-place (CIP) material offering 3.5 W/m-K thermal conductivity. THERM-A-GAP™ CIP 35E provides an alternative to hard-curing dispensable materials and an improvement over application methods associated with thermal gap pads. After curing, THERM-A-GAP CIP 35E serves as a low-hardness (50 Shore 00) gap pad that conforms to irregular shapes and maintains effective contact without transmitting compressive forces to adjacent electronics. Its ability to cure into complex geometries is suited for the cooling of multi-height components on a printed circuit board (PCB) without the expense of a moulded sheet. The product also offers vibration damping attributes, while the dielectric strength is 8 kVAC/mm (ASTM D149 test method) and the volume resistivity is 10¹³ Ωcm (ASTM D257). At 1000 kHz its dielectric constant is specified 8.0 dielectric (ASTM D150); and the dissipation factor at 1,000 kHz is 0.009 (Chomerics CHO-TM-TP13).

Partnership on Silicon Carbide Solutions for Power Management

Learn more:
microchip.com

Industry News
2025-07-17

Microchip Technology announced that under a new partnership agreement with Delta Electronics the companies will collaborate to use Microchip’s mSiC™ products and technology in Delta’s designs. The synergies between the companies aim to accelerate the development of innovative SiC solutions, energy-saving products and systems that enable a more sustainable future. Delta intends to leverage Microchip’s experience and technology in SiC and digital control to accelerate time to market of its solutions for high-growth market segments such as AI, mobility, automation and infrastructure. This agreement prioritizes the companies’ resources to validate Microchip’s mSiC solutions to fast-track implementation in Delta’s designs and programs. Other key advantages of the agreement are top-tier design support including technical training as well as insight into R&D activities and early access to product samples.

150 V and 200 V MOSFETs “with industry-leading Figures of Merit”

Learn more:
idealsemi.com

Product Release
2025-07-17

iDEAL Semiconductor’s SuperQ™ technology has entered full production, with the first products being 150 V MOSFETs. A family of 200 V MOSFETs is sampling. SuperQ is said to be “the first significant advance in silicon MOSFET design in more than a quarter of a century and delivers unmatched performance and efficiency in silicon power devices”. It almost doubles the n-conduction region (up to 95%) and reduces switching losses by up to 2.1x versus competing devices while operation at up to 175 °C junction temperature. The first product in iDEAL’s 150 V MOSFET series, iS15M7R1S1C, is a 6.4 mΩ MOSFET. It is available immediately in a 5 x 6 mm² PDFN package. The SMT package includes exposed leads to simplify assembly and improve board level reliability. The 200 V family includes the iS20M6R1S1T, a 6.1 mΩ MOSFET in a 11.5 x 9.7 mm² TOLL package. This has an R_DSon of 6.1 mΩ, which is claimed to be “10% lower than the current industry leader and 36% lower than the next best competitor”. The company is also sampling 200 V MOSFETs in TOLL, TO-220, D2PAK-7L and PDFN packages. 250V, 300 V and 400 V MOSFET platforms are promised to be coming soon.

30 Years of Openair-Plasma Technology

Learn more:
plasmatreat.com

Industry News
2025-07-16

In early July Plasmatreat celebrated the 30th anniversary of the patent application for its Openair-Plasma technology with its Technology Days 2025 at the headquarters in Steinhagen, Germany. Due to its process stability, efficiency, environmental friendliness, and ease of integration into production environments, the Openair-Plasma technology has changed numerous industrial processes worldwide. More than 200 guests and 16 industry partners joined the Plasmatreat team for the celebration. This plasma technology is used to give materials special properties for further processing including ultra-fine cleaning, activation, reduction, and coatings for a wide range of industrial applications. Plasmatreat technology is currently used in more than 100 automotive and battery production applications. E. g. PlasmaPlus PT-Bond technology serves as an environmentally friendly bonding agent that is often used to bond different materials in a stable, weather-resistant way. Eight interactive workshops complemented the event. For example, the workshop "REDOX effect: Reduction to High-Performance Coatings” showed how oxidized and contaminated metal surfaces are cleaned in the semiconductor industry to meet the strictest standards for manufacturing electronic components. Plasma systems and reduction were also demonstrated live.

TVS Diodes cut Clamping Voltage

Learn more:
littelfuse.com

Product Release
2025-07-15

Littelfuse launched the 5.0SMDJ-FB TVS Diode Series, a 5000 W surface-mount solution in a DO-214AB package engineered to protect sensitive DC power lines from overvoltage transients. This series incorporates foldback technology, which delivers up to 15% lower clamping voltage (V_C) compared to traditional solutions, while maintaining Breakdown Voltage (V_BR) above the Reverse Standoff Voltage (V_R). It is a drop-in replacement to legacy 5.0SMDJ series with the same DO-214AB (SMC) footprint. These devices protect DC power lines across a variety of demanding applications, including Power over Ethernet (PoE) systems, AI and data center servers, ICT equipment power supplies and industrial DC power distribution.

1 W Current Sense Chip Resistor Series

Learn more:
seielect.com

Product Release
2025-07-14

Stackpole Electronics expanded the CSSH Series of current sense chip resistors with a 0805 version for high power density applications. This component is designed to be used in power modules, frequency converters, battery management systems, as well as automotive and EV controls. The CSSH0805 delivers 1 W power handling in a 0805 footprint. With resistance values as low as 0.5 milliohm and TCR from 50 to 100 ppm, it matches the performance of larger 1206 and 2010 resistors.

Jennifer Lloyd Announced Chief Executive Officer

Learn more:
power.com

People
2025-07-14

Power Integrations announced that Jennifer A. Lloyd, PhD will be the company’s next chief executive officer, succeeding Balu Balakrishnan, who has served as CEO since 2002. A former member of Power Integrations’ board of directors, Dr. Lloyd has been reappointed to the company’s board. Dr. Lloyd holds doctoral, master’s and bachelor’s degrees in electrical engineering and computer science from the Massachusetts Institute of Technology. Author of numerous technical papers and recipient of eight U.S. patents, she has also been active in the IEEE community, having served on the technical program committee for the International Solid-State Circuits Conference (ISSCC), the Custom Integrated Circuits Conference (CICC) and the VLSI Symposia (VLSI). Mr. Balakrishnan plans to serve as executive chairman of Power Integrations’ board of directors for approximately six months to ensure a smooth leadership transition; he is expected to remain a non-executive member of the board thereafter. Bala Iyer will remain in the role of lead independent director.

dataTec Innovation Day

Learn more:
datatec.eu

Event News
2025-07-11

dataTec and selected partner companies are hosting an Innovation Day on September 25, 2025, in Stuttgart - bringing together theory, practice, and product worlds. Experience the latest developments up close and discover how ideas turn into real solutions. A day full of knowledge, exchange, and hands-on experience. Whether you're looking to dive deep into a specific topic or gain a broad overview, Innovation Day offers valuable insights for engineers, technicians, developers, users, and decision-makers.

47 µF Multilayer Ceramic Capacitor in 0402-inch Size

Learn more:
murata.com

Product Release
2025-07-10

Murata has begun “the world’s first mass production of the 0402-inch size (1.0 × 0.5 mm²) multilayer ceramic capacitors (MLCC) with a capacitance of 47 µF. The devices are available in two variants with different temperature characteristics. Compared to Murata’s conventional 0603-inch size product with the same capacitance, this new capacitor reduces mounting area by approximately 60 %. Additionally, it delivers about 2.1 times the capacitance of Murata’s previous 22 µF product in the same 0402-inch size. The MLCC is available in two variants – the X5R (EIA) GRM158R60E476ME01 with an operating temperature range of -55 to +85 °C, and the X6S (EIA) GRM158C80E476ME01 with an operating temperature range of -55 to +105 °C. Both devices feature a ±20% tolerance and rated voltage of 2.5Vdc.

Semi-Shielded Power Inductors

Learn more:
bourns.com

Product Release
2025-07-10

Bourns has added five product series to the existing Bourns SRN-BTA family of semi-shielded power inductors. The semi-shielded construction combines the advantages of both non-shielded and shielded inductor designs. The five additional devices use bottom-soldered lead-wires for increased mechanical strength and stability in applications in automotive systems, DC/DC converters, and power supplies across consumer, industrial and telecom electronics. These models are AEC-Q200 compliant and automotive grade.

Level 3 SPICE Models featuring enhanced Simulation Speed

Learn more:
rohm.com

Product Release
2025-07-10

ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs were precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement. The L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase. By the end of April 2025, ROHM has released 37 L3 models for its 4^th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.

1200 V SiC Schottky Diodes

Learn more:
nexperia.com

Product Release
2025-07-10

Nexperia announced the addition of two 1200 V 20 A silicon carbide Schottky diodes. The PSC20120J and PSC20120L have been designed to address ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are suited for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications. These Schottky diodes deliver temperature-independent capacitive switching and zero recovery behavior while it is claimed that the “switching performance is almost entirely independent of current and switching speed variations”. This PSC20120J is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount device power plastic package, while the PSC20120L is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package suited for operating temperatures up to 175 °C.

GaN-Based Motor Drive Reference Design for Humanoid Robots

Learn more:
epc-co.com

Product Release
2025-07-10

Efficient Power Conversion Corporation (EPC) introduces the EPC91118, which is claimed to be “the first commercially available reference design to integrate gallium nitride (GaN) IC technology for humanoid robot motor joints”. Optimized for space-constrained and weight-sensitive applications such as humanoid limbs and compact drone propulsion, the EPC91118 delivers up to 15 A_RMS per phase from a 15 V to 55 V DC input in a compact circular form factor. At the heart of the EPC91118 is the EPC23104 ePower™ Stage IC, a monolithic GaN IC that enables higher switching frequencies and reduced losses. The GaN-based power stage is combined with current sensing, a rotor shaft magnetic encoder, a microcontroller, RS485 communications, and 5 V and 3.3 V power supplies - all on a single board that fits entirely within a 32 mm diameter footprint. Each of the phases of a 3-phase BLDC motor can be driven with 15 A_RMS at a PWM frequency of 100 kHz with 50 ns dead time. The fully integrated board includes a controller, sensor and power conversion and uses MLCC-only DC link capacitors to reduce size and to increase liability. While the inverter has a diameter of 32 mm, the external frame’s diameter is 55 mm.

Compact MOSFET for Fast Charging Applications

Learn more:
rohm.com

Product Release
2025-07-08

ROHM has developed a 30 V N-channel MOSFET named AW2K21 in a common-source configuration that achieves "an industry-leading ON-resistance of 2.0 mΩ (typ.) in a compact 2.0 mm × 2.0 mm package". Compact devices featuring large-capacity batteries, such as smartphones, need fast charging functionalities requiring bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. The maximum current rating for these applications is 20A, with a breakdown voltage between 28 V and 30 V, and an ON-resistance of 5 mΩ or less. The AW2K21 consists of two MOSFETs integrated into a single package, allowing a single part to support bidirectional protection applications. Application examples are smartphones, VR headsets, compact printers, tablets, wearables, LCD monitors, laptop computers, portable gaming consoles or drones.

Avnet announces Gilles Beltran as new President

Learn more:
avnet.com

People
2025-07-07

Avnet has appointed Gilles Beltran as President of Avnet EMEA. Currently President of Avnet Silica, one of Avnet’s European semiconductor specialist divisions, Gilles Beltran will be succeeding Slobodan Puljarevic and Mario Orlandi, who have co-led the EMEA region with distinction for seven years. As the EMEA President, Gilles Beltran will have the Presidents of the Avnet Abacus, EBV Elektronik, and Avnet Silica business units reporting to him. Gilles Beltran joined Avnet Silica in 2002, bringing more than two decades of company-specific experience and know-how to this new role – including four years as President of Avnet Silica.

Supervisory Board appoints Alexander Gorski Chief Operations Officer

Learn more:
infineon.com

People
2025-07-07

Dr. Rutger Wijburg, Member of the Management Board and Chief Operations Officer (COO) of Infineon Technologies, will resign from his position at the end of the fiscal year on 30 September 2025 at his own request and will retire after being a member of the Management Board of Infineon Technologies and Chief Operations Officer since April 2022. The Supervisory Board has appointed Alexander Gorski as his successor, effective as of 1 October 2025. Alexander Gorski is currently Executive Vice President and Head of Frontend Operations at Infineon and will be responsible for Operations, Procurement, Supply Chain and Quality Management in his new position as COO. His mandate as Chief Operations Officer will last for three years as is customary for first appointments. As Head of Backend and later as Head of Frontend Operations, Alexander Gorski has strategically developed Infineon's manufacturing landscape over the last few years. After completing his MBA at the University of Regensburg, he began his career at Infineon (until 1999 Siemens) in 1998 and subsequently took on various management positions in the areas of Operations, Supply Chain and Sales. Alexander Gorski worked for a solar company as a board member and managing director for seven years. He returned to Infineon in 2016 as COO of the Power & Sensor Systems division, becoming Head of Backend in 2021 and Head of Frontend in 2024.

ESD Protection Diodes for 48 V EV Communications Networks

Learn more:
nexperia.com

Product Release
2025-07-02

Nexperia introduced "the industry's first ESD diodes designed to protect 48 V automotive data communications networks against the destructive effects of electrostatic discharge (ESD) events". These six AEC-Q101 qualified devices covers the required higher reverse working maximum voltage (V_RWM) for increasingly common 48 V board nets. This saves PCB space and system cost while maintaining signal integrity even at higher data rates. While data communications protocols like CAN and CAN-FD, as well as LIN and FlexRay have been around for several decades, their proven reliability in lower speed applications means they continue to feature in even the most recent automobiles, including (H)EVs. However, unlike conventional internal combustion engine powered vehicles that have a 12 V battery, or commercial vehicles that feature a 24 V battery, the higher efficiency requirements of EVs and HEVs mean they are increasingly moving towards using a 48 V battery to power various electrical systems, including these legacy communications networks. The family consists of ESD diodes with 54 V (PESD2CANFD54VT-Q and PESD2CANFD54LT-Q), 60 V (PESD2CANFD60VT-Q and PESD2CANFD60LT-Q) and 72 V (PESD2CANFD72VT-Q and PESD2CANFD72LT-Q) maximum V_RWM. These devices with a capacitance down to 3.4 pF are packaged in a standard SOT23 package. The optimized capacitance ensures that signal integrity is not impacted even in higher-speed protocols like CAN-FD.

Steve Sanghi to Continue as CEO and President

Learn more:
microchip.com

People
2025-07-02

Microchip Technology Incorporated announced that Steve Sanghi has agreed to continue to serve as the company's Chief Executive Officer and President on a permanent basis. Mr. Sanghi had been serving in such roles on an interim basis since November 2024. Mr. Sanghi will also continue to serve as Chair of the Microchip Board of Directors. Prior to his retirement as Microchip's CEO in 2021, Mr. Sanghi had served as Microchip's CEO for almost 30 years. Mr. Sanghi commented, "I have been a leader of Microchip for over 30 years and look forward to continuing to serve the company on a long-term basis. Although several of the elements of our recovery plan have been completed or substantially implemented, some of the other elements of the plan, such as achieving our long-term operating model, will require sustained efforts. I am thankful that the Board is entrusting me to continue to guide the company towards achievement of its goals."

Acquisition to expand T&M Portfolio for Power Electronics

Learn more:
rohde-schwarz.com

Industry News
2025-07-02

Rohde & Schwarz has acquired ZES ZIMMER Electronic Systems GmbH. The privately owned company based in Oberursel/Germany, has been designing, developing and manufacturing high-precision power measurement equipment for four decades. The acquisition complements the Rohde & Schwarz (R&S) test and measurement product portfolio and is considered by R&S to be "an important step that contributes to the company's long-term growth strategy and will benefit the customers of both companies". The family owned ZES ZIMMER Electronic Systems with around sixty employees will be fully integrated into the Rohde & Schwarz group. The location will be retained and will continue to be used for power measurement equipment.

Series of DC Energy Meters for Fast and Megawatt EV Chargers

Learn more:
lem.com

Product Release
2025-07-01

LEM introduced the DCES600 and DCES1500 meters to enable DC charging infrastructure manufacturers to design both fast and megawatt charging solutions, with kilowatt-hour (kWh) billing services in applications up to e-truck charging. They are designed to achieve class B accuracy at charger level with currents of up to 1500 A, at operating temperatures from –40 °C to +85 °C without derating. Their accuracy is maintained across the entire current range, for precise measurements throughout the full charging cycle, from high currents at the start to low currents near completion. Designers can access the DCES meters over an RS485 communication interface that provides cybersecurity features. These features include authentication of measurements using digital signatures, and facilities that enable secure remote maintenance and firmware updates. LEM is also offering a set of application programming interfaces (APIs) for software integration, and other software tools to ease testing and product integration. The DCES meters are available with an optional remote display unit, the RDU, which can be mounted on a front panel, DIN rail, or base plate without needing additional connections, such as communications lines or power sources, other than its link to the DCES meters. The devices offer real-time reporting of voltage, current, temperature and energy. LEM is now in the process of the certification of the DCES series by the end of the year. The DCES meters will then be compliant with European regulations such as MID 2014/32/EU, the EU's Directive on measuring instruments, and with Eichrecht, the German calibration law.

DC Meters for High-Power and Megawatt Charging

Learn more:
isabellenhuette.com

Product Release
2025-07-01

Isabellenhütte introduces the IEM-DCR, the second generation of DC meters that meet the requirements of accurate energy measurement for charging infrastructure and legally compliant billing. Isabellenhütte currently offers several versions of the DC meter. The IEM-DCR-125, with a current measurement range of 125 A and voltage of 1,000 V, is suitable for DC wall boxes. The IEM-DCR-1000, with up to 1,000 A and an extended voltage range of 1,500 V, is designed for high-power charging up to 1.5 MW. It is claimed to be "the first meter on the market to cover the 1,500 V voltage class". The IEM-DCR-1500, with 1,500 A and also a voltage range up to 1,500 V, is suited for megawatt charging applications and is currently undergoing certification. The IEM-DCR meters consist of separate display and sensor units for direct integration into charging stations. A further development compared to the first generation of meters is a CAN interface for the transmission of real-time measurement data (current, voltage, temperature and power). In addition, this generation allows bi-directional measurements and the creation of charging transactions in OCMF format. The energy meters also offer two options for compensating for cable losses. The IEM-DCR-125 and IEM-DCR-1000 have been certified and meet Accuracy Class B (EN 50470) and Class 1 (IEC 62053-41). In addition to the certification under German calibration law, the meters are also certified under the EU Measuring Instruments Directive (MID).

Joint 200 mm GaN Production planned

Learn more:
navitassemi.com

Industry News
2025-07-01

Navitas Semiconductor announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC), to start production and continue development of 200 mm GaN-on-silicon technology. Navitas' GaN IC portfolio is expected to use Powerchip’s 200 mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has been operational since 2019 and supports various high-volume manufacturing processes for GaN, ranging from micro-LEDs to RF GaN devices. Powerchip’s capabilities include a 180 nm CMOS process which is claimed to offer “smaller and more advanced geometries, which bring improvements in performance, power efficiency, integration, and cost”. Powerchip is expected to manufacture Navitas’ GaN portfolio with voltage ratings from 100 V to 650 V, supporting the growing demand for GaN for 48 V infrastructure, including hyper-scale AI data centers and EVs. The partnership is expected to “strengthen supply chain, drive innovation, and improve cost efficiency - supporting GaN’s ramp into AI data centers, EVs, solar, and home appliances”. Qualification of initial devices is expected in Q4/2025. The 100 V family is expected to start production first at Powerchip within the first six months of 2026, while the company expects 650 V devices will transition from Navitas’ existing supplier, TSMC, to Powerchip over the next 12-24 months.

GaN FETs for High-Density Power Conversion

Learn more:
renesas.com

Product Release
2025-07-01

Renesas introduced three high-voltage 650 V GaN FETs for AI data centers and server power supply systems including the 800 V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures. The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices are based on low-loss d-mode technology and claimed to "offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings". Moreover, they are marketed to "minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4 V threshold voltage, which is not achievable with today's enhancement mode (e-mode) GaN devices". Built on a die that is 14 percent smaller than the previous Gen IV platform, the Gen IV Plus products achieve a lower R_DS(on) of 30 mΩ, reducing on-resistance by 14 % and delivering a 20 % improvement in on-resistance output-capacitance-product figure of merit (FOM). These features make the Gen IV Plus devices suitable for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades.

Power Management IC Textbook

Learn more:
wiley.com

Industry News
2025-06-27

Wiley-IEEE Press has published "Design of Power Management Integrated Circuits" by Bernhard Wicht. Spanning 457 pages, this book delivers an in-depth exploration of both foundational principles and cutting-edge innovations in power management integrated circuits (PMICs). It covers key functions such as power stages, gate Drivers, Semiconductor Devices, and Integrated Passives, and extends to LDOs, Charge Pumps, and various DC-DC Converters. A key feature of the text is its extensive collection of real-world examples, case studies, and exercises aimed at enhancing the understanding of complex design concepts and providing extensive guidance for electronics engineers. Bernhard Wicht, a Full Professor at Leibniz University Hannover, Germany, brings extensive experience from both the semiconductor industry and academia as well as contributions as part of the ISSCC Technical Program Committee and as an IEEE Distinguished Lecturer. As a guide, this publication is intended for designers, engineers, and students eager to deepen their PMIC expertise and drive advancements in high-performance computing, IoT, mobility, and renewable energy sectors.

"MLCCs with the Industry's highest Capacitance at 100 V for Commercial Applications in the 1608 Case Size"

Learn more:
tdk.com

Product Release
2025-06-26

TDK Corporation has expanded its C series for commercial multilayer ceramic capacitors (MLCCs) to 1 µF at 100 V in the 1608 size (1.6 mm x 0.8 mm x 0.8 mm – L x W x H), with X7R characteristics. This is claimed to be "the industry's highest capacitance for a 100-V-rated product in this size and this temperature characteristic". "This 100-V product of the C series achieves ten times the capacity of conventional products of the same size". Main applications are input capacitors for power supply ICs used in commercial and industrial 48-V systems, etc.

Off-the-Shelf Radiation-Hardened 15 W DC/DC Power Converter for Space Applications

Learn more:
microchip.com

Product Release
2025-06-26

Microchip Technology announced the SA15-28 off-the-shelf radiation-hardened DC/DC 15 W power converter with a companion SF100-28 EMI filter that are designed to meet MIL-STD-461 specifications. This space-grade power device is a standard, non-hybrid DC/DC isolated power converter with a companion electromagnetic interference (EMI) filter that operates from a 28 V satellite bus in harsh environments. The SA15-28 is available with 5 V triple outputs that are usable with point-of-load converters and LDO linear regulators to power FPGAs and MPUs. The SA15-28 weighs 60 g and operates in the temperature range from -55 °C to +125 °C while offering a radiation tolerance up to 100 krad TID. The SF100-28 EMI noise suppression filter can be used with numerous power converters with a total output power of up to 100 W. For added flexibility in space applications, the SA15-28 and SF100-28 are fully compatible with Microchip's existing SA50 series of power converters and SF200 filter.

Power Supply Unit for Flux Gate Technology Current Transducers

Learn more:
danisense.com

Product Release
2025-06-26

Danisense has introduced the DSSIU-1-V, a low-noise power supply and interface unit designed to support a range of its flux gate current transducers (DCCTs). Featuring an industry-standard D-sub-9 connector, the DSSIU-1-V unit measures 130 mm x 116 mm x 56 mm and is equipped with an integrated Voltage Output Module (VOM), which precisely converts the measured current into a voltage output via a BNC connector. The DSSIU-1-V supports both 1 V and 10 V output options with its +/-15 V/1.2 A DC supply output generated from a universal mains input between 110 and 220 V_AC. Main target applications include flux gate DCCTs, hall effect DCCTs, electric vehicle test benches, power measurement and power analysis, current calibration purposes as well as precision current sensing.

"World's First 10 µF / 50 V_DC MLCC in 0805-inch Size for Automotive Applications"

Learn more:
murata.com

Product Release
2025-06-26

Murata has announced the GCM21BE71H106KE02 multilayer ceramic capacitor (MLCC) has entered mass production. The device is “the world's first 0805-inch size (2.0mm x 1.25 mm) MLCC to offer a capacitance of 10 µF with a 50 VDC rating and is specifically engineered for automotive applications”. Designed for 12 V automotive power lines, the GCM21BE71H106KE02 capacitor leverages Murata’s proprietary ceramic material and thinning technologies to help engineers to save PCB space and reduce the overall capacitor count. It offers roughly 2.1 times the capacitance of Murata’s previous 4.7 µF / 50 V_DC product, despite sharing the same physical size. Furthermore, compared to the previous 10 µF / 50 V_DC MLCC in the larger 1206-inch size (3.2 mm x 1.6 mm), the MLCC occupies approximately 53 % less space, providing substantial space savings for automotive applications.

Digital Controller for GaN Totem Pole PFC

Learn more:
wise-integration.com

Product Release
2025-06-26

Wise Integration release to production its first fully digital controller, WiseWare® 1.1 (WIW1101) based on the MCU 32 bits. This device enables high-frequency operation up to 2 MHz, unlocking new levels of power density, efficiency, and form factor in compact AC/DC power converters. Unlike legacy analog solutions, WiseWare 1.1 leverages the speed and switching capabilities of GaN through a proprietary digital control algorithm in a MCU 32 bits, that enables zero voltage switching (ZVS) across all power transistors. Designed specifically for totem pole power-factor correction (PFC) architectures in critical-conduction mode (CrCM), this controller allows engineers to reduce the size, weight, and thickness of magnetic components while maintaining >98 percent efficiency. It supports a power range from 100 W to 1.5 kW, making it suitable for a several applications requiring both compactness and high energy efficiency. Designed with flexibility in mind, WiseWare 1.1 works seamlessly with standard GaN across the full R_DS(on) spectrum. The minimum standby power consumption is 18 mW.

Isolated Gate Driver IC Optimized for High-Voltage GaN Devices

Learn more:
rohm.com

Product Release
2025-06-25

ROHM has developed an isolated gate driver IC – the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. The BM6GD11BFJ-LB utilizes proprietary on-chip isolation technology to reduce parasitic capacitance, enabling operation up to 2 MHz. This maximizes the high-frequency switching capabilities of GaN devices. This contributes not only to greater energy efficiency and performance in applications but also reduces mounting area by minimizing the size of peripheral components. At the same time, CMTI (Common-Mode Transient Immunity – an indicator of noise tolerance in noise isolated gate driver ICs) has been increased to 150 V/ns – 1.5 times higher than conventional products – preventing malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65 ns, which is 33% less than conventional products. With a gate drive voltage range of 4.5 V to 6.0 V and an isolation voltage of 2500 V_rms, the BM6GD11BFJ-LB is designed to fully support a wide range of high-voltage GaN devices, including ROHM's 650 V EcoGaN™ HEMT. The output-side current consumption is 0.5 mA (max). Typical application are industrial equipment like Power supplies for PV inverters, ESS (Energy Storage Systems), communication base stations, servers, and industrial motors as well as consumer devices like white goods, AC adapters (USB chargers), PCs, TVs, refrigerator and air conditioners.

Electroactive Polymers for Heating and Cooling

Learn more:
iap.fraunhofer.de

Industry News
2025-06-25

Research scientists at Fraunhofer IAP have developed electrocaloric polymer films with a very low thickness of only four micrometers and processed them into multilayer components. In the future, they will be used in various systems for heating and cooling. For example, in heat pumps for temperature control in vehicle interiors, battery modules, electronic components, control cabinets, or laser systems. Applications include electromechanical sensors and actuators for applications in soft robotics and automation, sound and vibration detectors, ultrasonic transducers, pyroelectric layers for infrared sensors, and electrocaloric materials for heating and cooling. Electrocaloric polymers react to changes in electrical voltage with changes in temperature: the sudden application of an electric field leads to a specific, sudden rise in temperature, which increases the greater the change in the electric field. This is due to polar structures in the material, which are forced into an orderly alignment by the electric field and release energy in the process. Conversely, they absorb energy again as soon as the electric field is switched off. The material cools down abruptly to the same extent. For the technical use of electrocaloric materials in heating and cooling systems, these processes must be repeated at high frequencies and controlled in such a way that heating and cooling take place in different environments. Only then can a heat pump with usable, permanently warm and cold areas be created. Several properties of the material are crucial for high electrocaloric performance, including a large change in electrical polarization, high dielectric strength, low thermal losses, and good mechanical stability.

Power Inductors in a Performance Version

Learn more:
we-online.com

Product Release
2025-06-25

The WE-XHMI Performance series extends Würth Elektronik's family of power inductors with improved versions in sizes 1010, 1060, 6030, and 6060. The magnetically shielded flat-wire inductors support high saturation currents while reducing DC. The WE-XHMI Performance SMT inductors show the ability to withstand saturation currents of up to 114 A while also handling high transient current peaks. This makes them particularly suitable for use in DC/DC converters, point-of-load converters and high-current filters, as well as in industrial computers, mainboards and graphics cards. These latest improvements now enable Würth Elektronik to meet the growing demand for low-loss solutions at high switching frequencies and maximum power density, driven by GaN and SiC transistor technologies. The new generation of molded WE-XHMI flat-wire inductors is claimed to "outperform other products of the same size by offering the lowest R_DC combined with low AC losses". Compared to the standard products in the series, the "Performance" models feature an extended inductance range, a higher operating temperature (-55 °C to +150 °C), up to 30 percent lower resistance, and up to 50 percent higher rated currents. Thanks to their significantly reduced DC losses compared to inductors of the same size, they enable more efficient operation with lower self-heating. Low DC losses at higher rated currents help raise the efficiency of switching regulators.

Power Inductors in a Performance Version

Learn more:
we-online.com

Product Release
2025-06-25

The WE-XHMI Performance series extends Würth Elektronik's family of power inductors with improved versions in sizes 1010, 1060, 6030, and 6060. The magnetically shielded flat-wire inductors support saturation currents of up to 114 A while reducing DC losses for even more efficient operation. They are suitable e. g. for use in DC/DC converters, point-of-load converters and high-current filters, as well as in industrial computers, mainboards and graphics cards. Compared to the standard products in the series, the "Performance" models feature an extended inductance range, a higher operating temperature (-55 °C to +150 °C), up to 30 percent lower resistance, and up to 50 percent higher rated currents at reduced DC losses compared to inductors of the same size.

180 W GaN Buck Converter Evaluation Board for USB PD Applications

Learn more:
epc-co.com

Product Release
2025-06-24

Efficient Power Conversion Corporation (EPC) introduced the EPC91109, a high-performance evaluation board designed to demonstrate the benefits of eGaN® FETs in a compact, thermally efficient, two-phase synchronous buck converter. Targeting USB Power Delivery (USB-PD 3.1) applications up to 180 W, the EPC91109 is optimized for space- and power-constrained designs such as laptops, portable devices, and battery-powered systems. The EPC91109 combines four 50 V-rated EPC2057 GaN FETs with the Analog Devices LTC7890, a dual-phase buck controller, to deliver output voltages of 12 V, 16 V, or 20 V from an input range of 20 V to 36 V. In two-phase interleaved mode, it supports output currents up to 14.3 A - matching the full 180 W USB-PD power envelope at 12 V output from a 36 V source. The EPC91109 Evaluation Board: is configurable to operate in either two-phase or single phase, dual-output mode, operates with a low-profile inductor of 3 mm height and has a power stage measuring 24 mm x 24 mm. Offering configurable light-load modes and dead-time settings it does not require any heatsink or forced air cooling as the peak efficiency is beyond 98 % under standard operating conditions.

Collaboration to advance next-generation GaN Device

Learn more:
silvaco.com

Industry News
2025-06-24

Silvaco Group announced a strategic R&D collaboration with Fraunhofer Institute for Silicon Technology (ISIT). The partnership aims to accelerate development of next-generation Gallium Nitride devices using Silvaco's Power Devices Solution to perform Design Technology Co-Optimization (DTCO). This collaboration aligns with Fraunhofer ISIT's role in the EU Chips Act initiative through its participation in the APECS pilot line. Silvaco is a provider of TCAD, EDA software, and SIP solutions that enable semiconductor design and digital twin modeling through AI software and automation. Fraunhofer ISIT's Power Electronics division is at the forefront of developing and manufacturing cutting-edge device prototypes for high-performance power electronic and sensor systems. Fraunhofer ISIT will leverage Silvaco's design tools - including the Victory TCAD™ platform, Utmost IV™, and SmartSpice™ - to perform Design Technology Co-Optimization (DTCO) for power and sensor device development. Silvaco DTCO platform will enable accelerated prototyping in Fraunhofer ISIT's post-CMOS process environment, which is set up to explore emerging processes for both GaN and MEMS technologies on 8-inch wafers. In addition, Silvaco's Victory Design of Experiments (DOE) solution will streamline development workflows and support rapid innovation during the evaluation of novel process modules and emerging device concepts. In addition to the active utilization of Silvaco's tools in R&D and industry customer projects, Fraunhofer ISIT will train students at local universities in the utilization of Silvaco's Victory TCAD platform to prepare the next generation of semiconductor device engineers.

Collaboration on Next-Generation Integrated Power Delivery Solution for AI and Cloud Platforms

Learn more:
empowersemi.com

Industry News
2025-06-18

Empower Semiconductor announced a collaboration with Marvell Technology to develop optimized integrated power solutions for Marvell® custom silicon platforms. These solutions are designed to accelerate the transformation of power delivery systems to smaller, faster, integrated power silicon chips tightly coupled with the processor. The joint solutions are part of Empower's broader mission to address the power delivery challenges of the kilowatt-chip era. By integrating power delivery with processors, Empower and Marvell enable hyperscalers and infrastructure providers to maximize their performance, efficiency, and return on investment (ROI) of artificial intelligence (AI) and cloud data centers. The collaboration leverages Empower's FinFast™ technology and vertical power delivery architecture to provide system designers with pre-validated, high-density power solutions that move voltage regulation from traditional board-level designs to silicon-integrated or near-chip solutions. By bringing power delivery closer to the processor, these solutions significantly reduce power transmission losses, improve efficiency, and support the increasing current demands of next-generation XPUs.

The EU Energy Label for Mobile Devices

Learn more:
izm.fraunhofer.de

Industry News
2025-06-17

A new energy label for mobile devices is mandatory in the EU starting June 20, 2025. This applies to all smartphones and tablets with Android or iPadOS operating systems, ushering in a new era of European product policy. For the first time, an EU-wide standardized label, which Fraunhofer IZM played a key role in developing, evaluates not only the energy efficiency of devices, but also their reliability, durability, and repairability. The European regulation's goal is to greatly increase the longevity of mobile devices. According to a survey conducted by the Fraunhofer Institute for Reliability and Microintegration IZM in 2022, factors other than energy consumption are also influencing users' decisions. The survey indicated that device longevity is a crucial consideration for users. The label is closely tied to the new ecodesign requirements. Batteries should be able to withstand at least 800 charging cycles while retaining 80% of their original capacity. Manufacturers must enter all products bearing the EU energy label in a European product database (EPREL). This database can be accessed via the QR code on the energy label. This allows for informed purchasing decisions that are based on sustainability criteria and align with the principles of a circular economy. The potential savings are considerable: The new requirements are expected to reduce the primary energy consumption required for producing, distributing, and using mobile devices by nearly 14 terawatt hours per year by 2030. This reduction is equivalent to approximately one-third of the previous energy consumption throughout the products' life cycle.

25 V MOSFET in DFN3.3x3.3 meets Power Demands in AI Servers

Learn more:
aosmd.com

Product Release
2025-06-17

Alpha and Omega Semiconductor introduced its AONK40202 25V MOSFET in DFN3.3x3.3 Source-Down packaging technology. Designed for high power density in DC/DC applications, the device provides features that meet the requirements of AI servers and data center power distribution. In particular, its Source-Down packaging technology offers a larger source contact to the PCB, and its center gate pin layout allows easier routing on the PCB, so the gate driver connection can be minimized. The AONK40202 MOSFET's DFN3.3x3.3 Source-Down packaging technology with clip enables continuous current capabilities up to 319 A with a maximum junction temperature rated at 175 °C. This provides significant potential for system-level improvements, such as better thermal management, enabling higher power density and greater efficiency.

1600 V IGBTs for energy-conscious Appliance Markets

Learn more:
st.com

Product Release
2025-06-16

STMicroelectronics' STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and a maximum junction temperature of 175°C with a current rating of 30 A in high-power applications, including induction heaters and cookers, microwave ovens, and rice cookers. Extending the STPOWER portfolio, this is the first 1600 V IGBT in ST's IH2-generation operating with a saturation voltage V_CEsat of 1.77 V (typical, at rated current). The device, which is available in a TO-247 long lead package, can be used in single-switch quasi-resonant converters over a switching frequency range, from 16 kHz to 60 kHz. Featuring a positive V_CE(sat) temperature coefficient with tight parameter distribution, the STGWA30IH160DF2 allows connecting multiple devices in parallel for current sharing in high-power applications.

Launch of Energy Storage Resource Hub

Learn more:
arrow.com

Industry News
2025-06-16

Arrow Electronics has launched a dedicated online hub offering extensive resources for those seeking to understand the future of energy storage systems. As the global shift towards renewable energy accelerates, battery energy storage systems (BESS) are becoming critical in revolutionising energy storage and management. BESS technology plays a vital role in integrating solar and wind power, enabling the electrification of vehicles, and providing reliable backup power, ultimately enhancing sustainability and resilience across various sectors. The energy storage systems resource page provides access to a range of valuable content, including a webinar on 'Optimising Energy Storage: The Role of Advanced BMS,' an e-book on BESS, essential design resources, insightful articles exploring key energy storage topics, such as photovoltaic integration and recordings of on-demand webinars, including 'High-Power SiC MOSFETs Designed to Last.' Arrow, in collaboration with eInfochips, is driving innovation in the BESS sector by offering leading-edge components, expert engineering support, and dependable supply chain solutions.

CWIEME Berlin Closes with Record Energy, Innovation and Collaboration

Learn more:
berlin.cwiemeevents.com

Event News
2025-06-12

The event for coil winding, insulation and electrical manufacturing brought together industry leaders, engineers, academics and future talent to shape the future of electrical manufacturing. Welcoming a visitor footfall of 12,500+, including representatives from Hitachi, Hyundai, LG Electronics, Logitech, NIDEC, Nike, Bosch, Rolls-Royce, Schaeffler, Schneider Electric, Siemens, Tesla, Toshiba, Toyota and more. The show's conference program featured more than 90 expert speakers, covering key themes such as automation, sustainability, digitalisation and supply chain transformation. From e-mobility breakthroughs to leadership insights, the event proved once again why CWIEME Berlin is the cornerstone of the global electrical engineering calendar. Visitors explored the buzzing Innovation Zone, which hosted well-attended Power Hour presentations from its exhibitors throughout the show, and expanded Academic Excellence Hub, and the launch of the Electric Avenue helped guide guests through five exhibition halls filled with the world's most forward-thinking companies.

eBook on High-Density Power Modules for 48 V

Learn more:
vicorpower.com

Product Release
2025-06-11

Vicor explains in their latest eBook how its power solutions support customers that are constantly pushing the limits of what is possible. This exclusive read entitled ‘Changing what’s Possible’ delves into how power dense Vicor modules enable many world-changing innovations across various sectors, including electric vehicles, renewable energy and advanced computing, all of which are adopting 48 V architecture. The guide from Vicor outlines the essential role of high-density power modules in optimising performance in applications which test the limits of power electronics. Through a range of case studies that highlight daunting power challenges, the eBook explains how thermally-adept Vicor power modules in tandem with Vicor propriety technology and 48 V architectures are capable of exceeding what’s possible. The eBook provides fresh insight and knowledge on different power architectures through practical examples, encouraging the adoption of best practices in power system design in order to push the boundaries of what is possible. The eBook includes in-depth analysis as it explores the latest developments in high-density power electronics and their implications for various industries. Furthermore, it also shows the actual products used in the power delivery network to better understand how to design an individual PDN. This is complemented by practical applications because the eBook teaches about real-world applications and how cutting-edge power solutions are transforming industries.

On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers

Learn more:
horiba.com

Industry News
2025-06-11

Wide bandgap semiconductors such as SiC, GaN, and diamond are critical materials for next-generation power electronics, optoelectronics, and quantum technologies. However, their performance is highly sensitive to internal stress, strain, and defects introduced during growth and processing. In this webinar, you can explore how Raman, Photoluminescence (PL), Time-Resolved Photoluminescence and Cathodoluminescence can be powerful, non-destructive tools for characterizing these properties with high spatial and spectral resolution. It is discussed how Raman spectroscopy can reveal information about crystal quality, phonon shifts due to strain, and temperature effects, while PL provides insight into electronic and optical properties, impurity levels, and defect states. Real-world case studies and application examples highlight how these techniques can be used to optimize material growth, improve device yield, and accelerate R&D.

Tab Terminal, High Voltage DC Switching Relay

Learn more:
fcl-components.com

Product Release
2025-06-10

FCL Components has released the FTR-E1J 20A, a tab terminal-type high voltage DC switching relay, based on its FTR-E1 series. It is screw mounted and does not use printed circuit boards. This relay delivers 20 A / 800 V_DC, 10 A / 1,000 V_DC higher voltage switching with no specific polarity requirements for the connection of load terminals, and low power consumption (0.9 W at coil rated voltage). It features non-polarized contacts, making it suitable for charge and discharge circuits using FCL Components' arc suppression technology to protect its contacts. The FTR-E1J 20A is well-suited for both fuel and electric vehicle, solar, machinery, and battery applications, including electric vehicle pre-charge (HEV, PHEV, FCV, EV), PTC heaters, quick charge stations, photovoltaic power generation systems, hybrid construction machinery, battery systems, and V2H systems. This high insulation design (between coil and contacts: 5,000 V_DC, between open contacts: 2,500 V_DC), plastic sealed relay is RoHS compliant and uses no hydrogen gas. It measures 28.3 x 43.6 x 36.1 mm³ (excluding protrusion) and weighs approximately 85 g.

Cooperation on Power Semiconductors for HVDC Transmission Systems

Learn more:
mitsubishielectric.com

Industry News
2025-06-10

Mitsubishi Electric Corporation announced that it has signed a memorandum of understanding (MOU) with GE Vernova, headquartered in Cambridge, Massachusetts, USA, to strengthen their cooperation on power semiconductors for high-voltage direct-current (HVDC) transmission systems. The agreement is a result of the "Japan-US focus group to enhance collaboration on energy security and supply chain," an initiative organized by Japan's Ministry of Economy, Trade and Industry (METI) and GE Vernova to promote increased corporate collaboration between the two countries. With the signing of this memorandum, Mitsubishi Electric will provide a stable and continuous supply of IGBT power semiconductors for GE Vernova's VSC HVDC transmission systems. Through strengthened technical and strategic cooperation with GE Vernova, Mitsubishi Electric aims to leverage the expertise and strengths of both companies to support the evolution of the power grid and meet the growing demand for electricity. Going forward, Mitsubishi Electric aims to further expand its HVDC transmission systems business by increasing production capacity to meet rapidly expanding market demand.

GaN Inverter Brings GaN Power to Medium-Voltage Motor Drives

Learn more:
epc-co.com

Product Release
2025-06-10

Efficient Power Conversion Corporation (EPC) released the EPC9196, a high-performance 25 A_RMS, 3-phase BLDC motor drive inverter reference design powered by the EPC2304 eGaN FET. The EPC9196 is specifically designed for medium-voltage (96 V – 150 V) battery-powered motor drive applications, including steering systems in automated guided vehicles (AGVs), traction motors in compact autonomous vehicles, and precision motor joints in robotics. The EPC9196 fills a gap in the motor drive reference design landscape. According to EPC "with no other available reference designs operating at this voltage and current combination, EPC offers system designers a compact, efficient, and ready-to-deploy solution that accelerates development and optimizes system performance in the lower end of the 25 – 400 A_RMS application range". At the heart of the EPC9196 is the EPC2304, a 200 V-rated, 3.5 mΩ (typical) eGaN FET in a thermally enhanced QFN package. Chosen for its low R_DS(on) and unmatched performance in compact form factors, the EPC2304 enables the EPC9196 to deliver up to 35 Apk (25 A_RMS) phase current at switching frequencies up to 100 kHz. This performance translates to low switching losses, minimal dead time, and a smooth, low-noise motor drive profile even at high PWM speeds. Key features of the EPC9196 include an input voltage range from 30 V to 170 V, integrated gate drivers, housekeeping power, current and voltage sense, over-current protection, and thermal monitoring as well as compatibility with multiple motor drive controller platforms from Microchip, ST, TI, and Renesas. Furthermore, the EPC9196 is dv/dt control optimized for motor drive applications (<10 V/ns) and ready for sensorless or encoder-based control configurations.

Sales Office in Shanghai opened

Learn more:
danisense.com

Industry News
2025-06-10

Danisense has recently opened a sales office in Shanghai, China to be closer to the Asian market and to be able to serve and support its growing Asian customer base locally. The office is being headed up by General Manager Siyu Yan, who benefits from more than 15 year years' experience in the electronics and Test & Measurement sector. On the picture (left to right) Henrik Elbæk, CEO of Danisense and Siyu Yan, General Manager of Danisense's Sales Office in Shanghai, shake hands to confirm and start working together.

High-Voltage Battery Sensor combining Shunt and Hall Effect Technologies

Learn more:
lem.com

Product Release
2025-06-10

LEM has launched a current sensing unit for battery management in electric vehicles (EVs). For the first time on the market, LEM has put together shunt and open-loop Hall effect technologies in a single part, called Hybrid Supervising Unit (HSU), to meet the challenges of small footprint, low cost and highest safety level in EV battery management systems. For higher safety levels, system engineers typically use two separate devices, a shunt to measure 2000 A and a current sensor fully isolated for measurements to 2000 A. At the BMS level, the HSU enables system developers to reach the ASIL D safety level required for EVs. The shunt's resistance is very low at 25 µΩ, and the Hall part is galvanically isolated, with accuracy of 2% at 500 A and 5% at 2000 A. Signal communication lines are separated (shunt signal and analogue or digital bus for the Hall part), and there is an NTC (Negative Temperature Compensation) signal for shunt temperature compensation. The current measuring range is up to ±2000 A at 10 s for both parts within the operating temperature range of -40 °C to +125 °C. The HSU is a plug-and-play unit. LEM initially offers the HSU00 part, with HSU01 to follow in June. The two are suitable for the two most common BDU busbar sizes: 84 x 36 x 3 mm³ (HSU00) and 84 x 20 x 3 mm³ (HSU01).

1200 V SiC Diodes: Manufacturing Collaboration between Indian and Taiwanese Companies

Learn more:
ruttonsha.com

Industry News
2025-06-05

RIR Power Electronics announces the successful production expansion and shipment of 1200 V SiC diodes from Taiwan. This was achieved through a strategic collaboration with a contract fab at Pro Asia Semiconductor Corporation (PASC), Taiwan and by leveraging technology IP that RIR Power had acquired from Sicamore Semi, USA. The product portfolio includes 1200 V Schottky Barrier Diodes (SBDs) ranging from 2 A to 60 A, addressing the most common ratings used across multiple applications and markets globally. Besides serving existing domestic Indian and the USA customers, shipping from Taiwan also provides improved access to strategic high-growth markets for SiC devices in the South East Asian region. RIR Power's SiC technology and portfolio are the result of a comprehensive technology transfer agreement signed with Sicamore Semi in October 2024. The agreement granted RIR Power exclusive rights to manufacture, market and commercialize SiC diodes, MOSFETs and IGBTs using Sicamore's proven IP and process know-how. Originally developed for 4-inch wafers, the technology has been successfully adapted for 6-inch wafer production. The scale-up was achieved with technical support from Vortex Semi, USA and PASC. The 1200 V SiC diodes, produced at PASC's fabrication facility in Taiwan, have been shipped to India and validated to meet global industry standards. RIR Power has already secured purchase orders from key suppliers to the commercial, industrial and defence sectors. This achievement aligns with India's Make in India initiative, reinforcing the nation's semiconductor supply chain and reducing reliance on imports for critical defence technologies. RIR Power's new SiC semiconductor facility in Odisha, is set to further enhance India's indigenous manufacturing capabilities.

Online Calibration Portal for brand agnostic Calibration Services for Current Transducers

Learn more:
danisense.com

Industry News
2025-06-05

Danisense has introduced its 'Online Calibration Portal' to offer brand agnostic calibration services for current transducers and make the whole process as smooth and easy as possible. Via the personal online portal, which is available on the company's website, customers can book their brand agnostic calibrations for current transducers to be performed in the ISO 17025 accredited Calibration Lab from Danisense, located at the company's Taastrup headquarters in Denmark. The 'Online Calibration Portal' provides customers with regular online and email updates during the calibration process, calibration reports, detailed order tracking as well as an online payment function, etc.

Digital Multimeter Series

Learn more:
rohde-schwarz.com

Product Release
2025-06-03

Rohde & Schwarz presents the R&S UDS digital multimeter series, which can display three measurements simultaneously and offer versatile measurement functions and various interfaces for remote control. Models are available with a digit resolution of 5 1/2 as well as 6 1/2, the latter providing a basic DC accuracy of 0.0075%. The R&S UDS series replaces the established R&S HMC8012 digital multimeter, offering more accuracy and an updated intuitive user interface. With voltage ranges extending up to 1000 V DC and 750 V AC and a current capacity of 10 A, these multimeters come with a 3.5" OVGA color display. For remote control, the new multimeters offer a variety of interfaces, including USB, IEEE-488 (GPIB) for SCPI-based commands, and LAN (Ethernet).

APEC 2026: Call for Technical Sessions Digest Submissions

Learn more:
apec-conf.org

Event News
2025-06-03

Texas, from March 22-26, 2026, continues the long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer. Interested authors wishing to present a paper must submit a digest for consideration by the deadline. To facilitate higher quality digest and final manuscript submissions, APEC 2026 offers significantly expanded submission windows for both the phases. Topics of interest are divided into fourteen tracks, each track with a diverse set of subtopics: AC/DC Converters, DC/DC Converters, DC/AC Inverters, Devices and Components, Magnetics, Power Electronics Integration and Manufacturing, Control, Modeling and Simulation, Motor Drives, Power Electronics for Utility Applications, Renewable Energy Systems, Wireless Power Transfer, Transportation Power Electronics, Power Electronics Applications. "APEC provides an ideal balance between academic and industrial research and is a meeting ground for these two areas, unlike any other power electronics conference," said Dhaval Dalal, APEC 2026 Program Chair. "APEC tops the list of the IEEE power electronics conferences for average paper citations - as of May 2025, 7.4 for APEC 2019 and 4.8 for APEC 2022." The Technical Sessions digest should explain the problem that will be addressed by the paper, its major results and how it is different from the closest existing literature. Technical Sessions papers presented at APEC must be original material and not have been previously presented or published.

Power Supplies for Communications, Industrial, and Defense Applications

Learn more:
pduke.com

Product Release
2025-06-01

P-DUKE's TBF500 family of AC/DC power supplies support a universal input voltage range from 85 to 264 VAC and are available with output voltages of 12, 15, 24, 28, 48, and 54 VDC. All members of the family offer a low 0.6 W power consumption under no-load conditions (no minimum load is required) and support up to 500 W loads with up to 93% power conversion efficiency. With 3,000 VAC reinforced insulation, TBF500 devices are presented in the form of a sealed power brick containing active semiconductor components with an integrated thermally conductive aluminum base plate. In addition to a 3-year warranty, the TBF500 PSUs are RoHS compliant, REACH compliant, and IEC/UL/EN 62368-1 safety compliant. A typical deployment involves the use of additional components, including a metal oxide varistor (MOV) to act as a fuse, resistors capacitors, and inductors to meet electromagnetic compatibility (EMC) requirements, bulk capacitors for smoothing, and other components to provide output filtering.

Radiation-hardened GaN Transistors

Learn more:
infineon.com

Product Release
2025-05-29

Infineon announced the first of a new family of radiation hardened Gallium Nitride transistors, fabricated at Infineon's own foundry, based on its CoolGan™ technology. Designed to operate in harsh space environments, it is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794. These radiation hardened GaN HEMT devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes. The first three product variations in this radiation-hardened GaN transistor line are 100 V / 52 A devices featuring an R_DS(on) of 4 mΩ (typical) and total gate charge of 8.8 nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70 MeV.cm²/mg (Au ion). Two devices, which are not JANS certified, are screened to a Total Ionizing Dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794. Infineon emphasizes that it is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications.

Flyback Transformers

Learn more:
sumida.com

Product Release
2025-05-28

Sumida announces its CEP1311F Flyback Transformers, designed specifically for use with "no-opto" isolated flyback circuits, such as the Analog Devices LT8304-1 reference design. This isolated flyback transformer is suited for industrial, automotive, medical, and telecom applications. The CEP1311F (13324-T083 to13324-T087) transformers have single outputs, while the CEP1311F (13324-T196) provides dual isolated outputs. This dual-output CEP1311F (13324-T196) flyback transformer is optimized for LT8304-1 applications. It enables isolated, no-opto flyback conversion with 110-V outputs and 15-V input. Custom configurations are also available. The single-output CEP1311F (13324-T083 to 13324-T087) is available in five output voltages, ranging from 3.3 V to 400 V. The dimensions are 21 mm x 21 mm x 11.8 mm, and the operating temperature range is -40 °C to 125 °C. In addition, a 1500 V_rms Hi-Pot rating provides electrical isolation for enhanced safety. The transformers also boast a Moisture Sensitivity Level (MSL) of 1 for unlimited floor life under standard environmental conditions.

Shielded Power Inductors

Learn more:
bourns.com

Product Release
2025-05-27

Bourns introduced the SRP2512CL and SRP3212CL Series Shielded Power Inductors that are claimed to feature "low AC Resistance and low DC Resistance, delivering reduced losses and high efficiency." The components were designed to meet the latest DDR5 memory technology specifications such as those in DDR5 Power Management Integrated Circuits (PMIC) and client DDR5 modules in desktop PCs, notebooks and tablets. The devices operate in the temperature range of -40 to +125 °C, and are available with inductance ratings of up to 1.5 µH in 3030 and 2520 package sizes.

PCIM booth raises €10,000 for a worthy cause

Learn more:
vincotech.com

Industry News
2025-05-26

Vincotech staged a charity benefit at this year's PCIM Europe trade fair. The company and its partners pledged a donation for every visitor who competed in a virtual reality memory game, raising 10,000 € for a Plan International Germany project in Malawi called "Education Empowers Girls!" Vincotech has made a tradition of hosting engaging charity events at the fair. Activities such as wall climbing, Sudoku, and this latest VR memory challenge – a crowd favorite – attracted hundreds of enthusiastic fairgoers. This year's proceeds go to a Plan International Germany project aiming to improve access to education and outcomes for girls in Malawi's Lilongwe and Kasungu districts. Running from October 2022 to September 2026, the initiative goes to create inclusive, supportive learning environments where girls and boys can realize their full potential. In a statement Vincotech explains why it chose this charity project: "Empowering girls through education changes lives – and not just individuals'; it transforms entire families and communities for generations to come."

AI-powered Design Assistant

Learn more:
frenetic.ai

Product Release
2025-05-22

Frenetic Electronics announced Frenetic AI, an AI-powered assistant that helps engineers design power converters. The company has also announced significant upgrades to Frenetic Magnetic Simulator, its cloud platform that allows engineers to simulate and design high-frequency inductors and transformers up to 95 % accuracy. Frenetic AI designs the converter topology based on user constraints and automatically generates electrical schematics and simulation files (LTspice, PLECS). It also suggests suitable off-the-shelf or custom magnetics. Currently available as a free basic version which has been beta-site tested, Frenetic AI will shortly be additionally offered as a PRO version is coming soon, which will include premium features such as planar transformer design, off-the-shelf component suggestions and additional design insights. Frenetic AI can integrate with Frenetic Magnetic Simulator for advanced magnetic component design, but can also be used as a standalone module. Frenetic Magnetic Simulator has also been upgraded. The original platform delivers advanced modeling of copper and core losses, the superposition of AC signals with high-frequency components and material and core selection based on the application's needs. Latest add-ons include a machine-learning-based model for calculating foil winding losses. The recent version of Frenetic Magnetic Simulator has been trained on 5,000 FEM simulations across many designs, and delivers 12 % median relative error, with millisecond response times.

IPCEI ME/CT CONNECT 2025

Learn more:
ipcei-me-ct.eu

Event News
2025-05-21

IPCEI ME/CT CONNECT 2025, being held on June 16 in Grenoble, France, is a key gathering for project partners, national authorities, and Member States to highlight achievements, share updates, and build new collaborations across Europe's strategic microelectronics and communication landscape. Held in conjunction with the IPCEI on Microelectronics and Communication Technologies, this event aims to strengthen Europe's leadership in secure, sustainable, and sovereign semiconductor-based technologies.

12 kW Power Supply Unit Reference Design for AI Data Centers

Learn more:
navitassemi.com

Product Release
2025-05-21

Navitas Semiconductor has announced a 12 kW power supply unit (PSU) "designed for production" reference design for hyperscale AI data centers with high-power rack densities of 120 kW achieving 97.8 % Efficiency. The 12 kW PSU complies with ORv3 specifications and OCP guidelines. It utilizes Gen-3 Fast SiC MOSFETs, an "IntelliWeave" digital platform, and high-power GaNSafe ICs configured in 3-phase interleaved TP-PFC and FB-LLC topologies. The 3-Phase interleaved totem-pole power factor correction (TP-PFC) is powered by Gen-3 Fast SiC MOSFETs with trench-assisted planar technology. IntelliWeave™ digital control provides a hybrid control strategy of both Critical Conduction Mode and Continuous Conduction Mode, for light-load to full-load conditions, ensuring maximum efficiency while maintaining a simplistic design with low component count. This results in a "30% reduction in power losses compared to existing Continuous Conduction Mode solutions". The 3-phase interleaved full-bridge LLC topology is enabled by 4^th generation high-power GaNSafe™ ICs, integrating control, drive, sensing, and critical protection features that allow unprecedented reliability and robustness. GaNSafe is claimed to be "the world's safest GaN with short-circuit protection" (350 ns maximum latency), 2 kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with four pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of R_DS(ON)typ. from 18 to 70 mΩ.

Semiconductor Collaboration on Next Generation 800 V HVDC Architecture

Learn more:
navitassemi.com

Industry News
2025-05-21

Navitas Semiconductor announced a collaboration with NVIDIA on their next-generation 800 V HVDC architecture to support 'Kyber' rack-scale systems powering their GPUs, such as Rubin Ultra, enabled by GaNFast™ and GeneSiC™ power technologies. NVIDIA's next generation of 800 V DC architecture aims to establish high-efficiency, scalable power delivery for next-generation AI workloads, to ensure greater reliability, efficiency, and reduced infrastructure complexity. Today's existing data center architecture uses traditional 54 V in-rack power distribution and is limited to a few hundred kW. As power increases above 200 kW, this architecture runs into physical limits due to power density, copper requirements, and reduced system efficiency. Modern AI data centers require gigawatts (GW) of power for the increasing demand for AI computation. Nvidia's approach is to directly convert the 13.8 kV AC grid power to 800 V HVDC at the data center perimeter using solid state transformers (SST) and industrial-grade rectifiers, eliminating several AC/DC and DC/DC conversion steps, maximizing efficiency and reliability. Due to the higher voltage level of 800 V HVDC, the thickness of copper wires can be reduced by up to 45%. The 800 V HVDC directly powers the IT racks (eliminating the need for additional AC/DC converters) and is converted by DC/DC converters to lower voltages, which will drive GPUs. NVIDIA's 800V HVDC architecture is expected to improve end-to-end power efficiency up to 5%, reduce maintenance costs by 70% (due to fewer PSU failures), and lower cooling costs by directly connecting HVDC to the IT and compute racks.

LTspice Models for ESD Products

Learn more:
we-online.com

Industry News
2025-05-21

Würth Elektronik, in cooperation with the Institute of Electronics (IFE) at Graz University of Technology, now offers an LTspice model for its TVS diodes and ESD suppressors for ESD protection, based on real measurement data using TLP (Transmission Line Pulsing). This enables the actual behavior of the components to be measured under electrostatic discharge (ESD) conditions. The ready-to-use simulation files facilitate integration into SPICE-based analyses and help shorten design cycles and time-to-market. Conventional models of components for ESD protection typically rely on simplified approximations. The new models developed by Würth Elektronik and the IFE at Graz University of Technology, based on measurement data, however, reflect the actual transient properties, including snapback behavior. The snapback effect allows the voltage to be clamped to a lower level after a transient overvoltage than is possible with standard PN diodes. This is a key aspect of ESD protection, as it reduces both the overvoltage and the resulting thermal stress on sensitive electronic components, so the ability to simulate it is a critical improvement to the development process. LTspice models for realistic modelling of real component behavior during ESD events for products from the WE-TVS and WE-VE product series are now available to download.

650 V SiC MOSFETs

Learn more:
toshiba.semicon-storage.com

Product Release
2025-05-20

Toshiba Electronics Europe announces volume shipments of its 3rd generation, 650 V silicon carbide MOSFETs in the compact DFN8x8 package for industrial equipment, the TW031V65C, TW054V65C, TW092V65C, and TW123V65C. An important characteristic of Toshiba's next-generation process is the consistently low R_DS(on) temperature coefficient of the devices. The R_DS(on) x gate-drain charge (Q_gd) figure of merit (FoM), therefore, enables engineers to enhance the power density and efficiency of numerous high-voltage applications, including switched-mode power supplies (SMPSs), electric vehicle (EV) charging stations, uninterruptible power supplies (UPS), and photovoltaic (PV) inverters. The surface-mount DFN8x8 package reduces volume by more than 90 % compared to existing lead-inserted packages, such as TO-247 and TO-247-4L(X). Furthermore, the multi-pin device allows a Kelvin connection of its signal-source pin for the gate drive.

APEC 2026: Call for Papers

Learn more:
apec-conf.org

Event News
2025-05-20

APEC 2026 will take place March 22 – 26, 2026 at the Henry B. Gonzalez Convention Center in San Antonio, Texas/USA, and now the call for Technical Session Papers has started. APEC 2026 offers an expanded window for digest and final manuscript submissions, making it easier to participate. According to the organizer, "submitting your work is a strategic investment in your professional future - contribute to the evolution of power electronics, engage with a dynamic and influential community, and make a lasting impact". According to the submission requirements engineers have to review the list of topics when planning their digest in order to ensure that the work is original, not previously published, and include evidence of completed experimental work. The principal criteria in selecting digests will be the usefulness of the work to the practicing power electronic professional. Reviewers value evidence of completed experimental work. Authors should obtain any necessary company and governmental clearance prior to submission of digests. Once Accepted, a detailed letter will be sent to all accepted submissions. The deadline for digest submissions is August 15, 2025, while final manuscripts and author registrations are due December 8, 2025.

IEDM 2025 Paper Submission Deadline in July

Learn more:
ieee-iedm.org

Event News
2025-05-19

The 71st annual IEEE International Electron Devices Meeting (IEDM) is scheduled for December 6 - 10, 2025 in San Francisco, with on-demand access to recorded content after the event. Paper submission deadline is July 10, 2025. Authors are asked to submit four-page papers electronically in IEEE Xplore-compatible PDF format and the accepted papers will be published as-is in the proceedings. Late-news papers covering the most recent, most noteworthy developments also will be accepted, with a submission deadline of August 18, 2025. IEDM 2025 will feature special Focus Sessions on "Efficient AI solutions", "Beyond Silicon: The Invisible Revolution in Thin-Film Transistors", "From P-bits to Qubits" and "Silicon Photonics for Energy Efficient AI Computing". Papers written by students as the lead author based on their own work will be considered for the Best Student Paper Award. Papers must be identified as student papers at time of submission, and the presentation must be given by the student to be eligible. The award is chosen based on both paper and presentation, and winner is announced and presented after IEDM.

CIPS 2026: Call for Papers

Learn more:
cips.eu

Event News
2025-05-19

CIPS, the "International Conference on Integrated Power Electronics Systems" will take place March 10-12, 2026 in Dresden/Germany, and the organizers describe the basic framework as follows: In the next decades, power electronic system development will be driven by energy saving systems, intelligent energy management, power quality, system miniaturisation and high reliability. Monolithic and hybrid system integration will comprise advanced device concepts including wide bandgap devices, new packaging technologies and the overall integration of actuators/drives (mechatronic integration). Consequently, CIPS is focused on the three main aspects: Assembly and interconnect technology for power electronic devices and converters. The second aspect is the integration of hybrid systems and mechatronic systems with high power density, and the third aspect is the systems' and components' operational behaviour, reliability and availability. Basic technologies for integrated power electronic systems as well as upcoming important applications will be presented in interdisciplinary invited papers. Experts from industry, research institutes and universities wishing to present results of their recent research are cordially invited to submit a paper by September 29, 2025. Applications are wide spread over areas such as power supplies and drives to feed all kinds of loads like consumer electronics, industrial equipment, data centres etc. Applications are e. g. from the grid or to feed electrical energy from solar or wind generators to the grid but also in the transportation sector like railway, automotive and aircraft. The organizers explicitly encourage to "submit your contribution even if you can not find the appropriate topic for your contribution. All interesting contributions are welcome!"

Technology Center in the "Indian Silicon Valley"

Learn more:
harting.com

Industry News
2025-05-16

Following the establishment of a sales office in Chennai in 2005 and the opening of a production plant in 2022, Harting has now inaugurated a technology center focusing on research and development in India. The aim is to meet the demand for advanced connector solutions in the region in a customer-oriented manner and to meet the growing requirements in the Asian market. Now, a 7,000 square metre technology center has been officially opened in Bangalore, popularly known as the "Silicon Valley of India". The goal: to offer talented individuals from the technology sector a platform to drive forward the development of connectivity solutions for various industries such as manufacturing, transport and telecommunications. Harting will also offer training and development opportunities to aspiring engineers and technology specialists. In addition to its headquarters in Chennai, Harting India has further sales offices in Bangalore, Pune and Noida.

Coupled Inductor for High-Performance Applications

Learn more:
we-online.com

Product Release
2025-05-15

Würth Elektronik introduces its WE-HCMD (High Current Multiphase Dual) high-current inductor, specially developed for use in TLVR (Trans-Inductor Voltage Regulator) topologies. This coil with MnZn core is characterized by its high permeability and very low RDC values allowing a high power density and efficiency. When designing power supplies for processors today, developers are confronted with increasingly high and significantly varying load transients – for example, in FPGAs used in AI applications. The innovation in TLVRs in this field calls for a new generation of components that achieve consistent efficiency even at high temperatures. The WE-HCMD family from Würth Elektronik offers coupled inductors with a coupling factor of up to 0.98 and an inductance range from 70 nH to 200 nH. The saturation current goes up to 190 A at a rated current of 78 A. The internal resistance is 0.125 mΩ. The inductor is designed for operating temperatures up to 125 °C. The family of SMT-mountable high-current inductors for TLVR applications includes four versions in a 0910 package and six in a 1111 package.

Early Bird Registration for ECCE Europe 2025 is Now Open

Learn more:
ecce-europe.org

Event News
2025-05-15

Early Bird Registration for ECCE Europe 2025, being held in Birmingham/UK from August 31 to September 4, is now open. If you're working in power electronics or energy conversion, this is your chance to connect with industry experts, researchers, and thought leaders shaping the field. Learn from renowned experts through keynote addresses, insightful tutorials, and engaging special sessions, while networking and building valuable connections with colleagues from around the world.

Wide Bandgap Power-electronic devices – From characterization to EMC testing

Learn more:
datatec.eu

Event News
2025-05-15

Rohde & Schwarz and dataTec invite you to xperience live demonstrations of how to analyze wide bandgap semiconductors using an oscilloscope and gain valuable insights into selecting the right oscilloscopes and probes. They will also demonstrate how EMC measurements and debugging can be efficiently performed with the oscilloscope, spectrum analyzer, and SCN. This seminar in Reutlingen/Germany on July 1st is aimed at users working with wide-bandgap semiconductors who are planning to purchase an oscilloscope and want to deepen their practical knowledge.

GaN Half-Bridge Drivers

Learn more:
st.com

Product Release
2025-05-14

STMicroelectronics' high-voltage half-bridge gate drivers for GaN applications dubbed STDRIVEG610 and STDRIVEG611 give designers two options to manage GaN devices in power conversion and motion applications for greater efficiency, power density and ruggedness in consumer and industrial applications. The STDRIVEG610 addresses applications requiring a fast 300 ns start-up time which is an important parameter for converter topologies like LLC or ACF ensuring accurate controlled turn-off intervals in burst mode. The STDRIVEG611 is tailored for hard switching in motion-control applications with additional protection features like high-side UVLO and smart shut down overcurrent protection. Both devices are suitable for hard-switching and soft-switching topologies with built-in interlocking to prevent cross conduction. The STDRIVEG610 elevates the performance of power adapters, chargers, and power-factor correction (PFC) circuits. The STDRIVEG611 saves space as well as boosting efficiency and reliability in drives for home appliances, pumps and compressors, industrial servo drives, and factory automation. Both devices integrate a high-side bootstrap diode as well as 6 V high-side and low-side linear regulators with a propagation delay matched to within 10 ns. Each driver has a separate sink and source path, with 2.4 A / 1.2 Ω sink and 1.0 A / 3.7 Ω source parameters. The integrated UVLO protection safeguards both the lower and upper 600 V GaN power switches.

Series of Gate Drive Transformers

Learn more:
itg-electronics.com

Product Release
2025-05-14

ITG Electronics has introduced a series of gate drive transformers comprising a range of products for various needs. The company's T201213 Series of Gate Drive Transformers spans lower-current items for general applications – such as a 200 V direct current version – to products offering up to 450 V_DC for higher-voltage applications. Gate drive transformers are specialized pulse transformers used to deliver high-power, fast-switching signals to the gates of power translators like IGBTs and MOSFETs, while also providing galvanic isolation. Essentially acting as barriers between power translators and controlling drive circuits, gate drive transformers are essential to applications such as power converters and motor drives for efficient and consistent switching. The T201213 Series activates or deactivates switching devices, and provides floating supply and level shifting for switching signals. The series is designed for frequencies from 20 – 300 kHz, and each gate drive transformer in the portfolio meets medical safety isolation requirements.

EMC Components: Multilayer Chip Beads for 8 A

Learn more:
tdk.com

Product Release
2025-05-13

TDK Corporation has expanded its MPZ1608-PH series of large-current multilayer chip beads for automotive and commercial power supply lines (1.6 x 0.8 x 0.6 mm³ – L x W x H). These 1608-size chip beads for power supply lines achieve a rated current of 8 A. Chip beads are used as noise suppression components in power and signal circuits. In a circuit with a current of 8 A or more, usually two or more chip beads must be used in parallel. This has the disadvantage that the current is not evenly distributed between the ferrite beads. The MPZ1608-PH series of products halves the component footprint in comparison with circuits using two conventional 1608-sized chip beads. Moreover, the components with a specified operating temperature of up to +125 °C are designed to be used in high-temperature environments like automotive and industrial equipment applications.

Semiconductor Partnership with Indian Government

Learn more:
renesas.com

Industry News
2025-05-13

Renesas has started a partnership with the Ministry of Electronics & Information Technology (MeitY), Government of India, to support local startups and academic institutions in the field of VLSI and embedded semiconductor systems. Renesas also celebrated the expansion of its offices in Bengaluru and Noida to accommodate its growing R&D teams, with inauguration ceremonies held in May 2025. India is a key market for Renesas, offering significant growth potential and access to a highly skilled talent pool. Renesas intends to generate over 10 percent of its global revenue from the Indian market by 2030. Recent collaborations include the OSAT factory project with CG Power and Stars Microelectronics in Gujarat and the MOU with IIT Hyderabad. Renesas is also expanding its operations in India, with plans to increase its headcount to 1,000 by the end of 2025.

SMD Fuse with 1500 A Interrupting Rating

Learn more:
littelfuse.com

Product Release
2025-05-13

Littelfuse launched the Nano²^® 415 SMD Series Fuse, the first surface-mount fuse from Littelfuse with a 1500 A interrupting rating at 277 V. Designed to provide true buffering for 250 V applications with unpredictable voltage fluctuations, the 415 Series offers fault current protection in a compact SMD package, making it ideal for space-constrained applications. The Nano² 415 SMD Series is well-suited for a range of applications, including consumer electronics like power adapters, chargers, and power supplies, industrial systems like inverters, converters, and instrumentation, automotive like EV charging stations, home chargers, and lighting, appliances/white goods like washers, dryers, and refrigerators as well as home automation like automated garage doors and smart home systems.

Multiphase Power Controller

Learn more:
aosmd.com

Product Release
2025-05-13

Alpha and Omega Semiconductor (AOS) announced its AOZ98252QI 2-output, 8-phase controller with 2.5 mA quiescent power. Featuring AMD SVI3 high-speed and SMBus digital interfaces, the AOZ98252QI is engineered as a key component in a complete system power solution with AOS' DrMOS products for graphics and desktop systems. The AOZ98252QI digital controller provides two output rails in flexible 8+0 to 4+4 GFX/SOC and Vcore/SOC output rails. Using the A²TM (Advanced Transient Modulator) feature, designers can achieve fast response times and adequate current balance for transient and DC loads. The device is shipped in a QFN 6x6-52L package.

Collaboration to support Battery Energy Storage System Platform

Learn more:
arrow.com

Industry News
2025-05-13

Arrow Electronics, in collaboration with Prime Batteries and NXP Semiconductors, is launching a next-generation Battery Energy Storage System (BESS) platform. Prime Batteries developed this solution with support from Arrow and NXP to advance energy industry and energy-saving technologies, addressing the increasing global demand for greater efficiency. By leveraging their combined strengths, the companies aim to establish new benchmarks in energy-saving technology and make a substantial impact across industries. According to Arrow the solution complies with the latest European safety regulations and "achieves unprecedented levels of energy storage capacity, making it ideal for a variety of BESS applications". The platform's versatility allows it to cater to different customer needs, with adjustable voltage and current parameters. It supports high voltages up to 1500 V, in-line with current market trends for high-power equipment, and meets rigorous safety standards for critical applications, including ISO 26262, with the potential for ASIL D certification, if necessary. The system features multiple protection layers and continuous, independent cell monitoring. Designed with scalability and upgradability in mind, the BESS can meet the changing requirements of customers. Its low maintenance needs and optimized operating conditions extend its lifespan, thereby reducing the total cost of ownership. In this context NXP's 1500 V Battery Energy Storage System provides a modular and scalable reference design for utility, commercial, industrial and residential high-voltage applications.

Collaboration on Power Conversion Systems for Electric Vehicles

Learn more:
visteon.com

Industry News
2025-05-09

Infineon Technologies and Visteon announced the companies have signed a Memorandum of Understanding (MOU) to advance the development of next-generation electric vehicle powertrains. In this joint effort, Infineon and Visteon will collaborate and integrate power conversion devices based on Infineon semiconductors, with particular emphasis on wideband gap device technologies, which provide significant advantages in power conversion applications compared to silicon-based semiconductors. These devices include greater power density, efficiency and thermal performance, which contribute to improved efficiency and reduced system costs for next-generation power conversion modules for the automotive sector. Future Visteon EV powertrain applications incorporating Infineon CoolGaN™ (Gallium Nitride) and CoolSiC™ (Silicon Carbide) devices may include battery junction boxes, DC-DC converters and on-board chargers. The resulting powertrain systems will conform to the highest efficiency, robustness and reliability. "Working with Infineon allows us to integrate cutting-edge semiconductor technologies that are essential in improving power conversion efficiency and overall system capability of next generation electric vehicles," said Dr. Tao Wang, Head of the Electrification Product Line of Visteon Corporation. "This collaboration will advance technologies that accelerate the transition to a more sustainable and efficient mobility ecosystem."

German Government issues final Funding Approval for new Smart Power Fab in Dresden

Learn more:
infineon.com

Industry News
2025-05-08

Infineon Technologies has received final approval for the funding of its new plant in Dresden (Smart Power Fab) from the German Federal Ministry for Economic Affairs. Infineon is expanding the site in order to meet customer demand for example for renewable energies, efficient data centers and electromobility. Infineon will invest five billion euros of its own money, creating as many as 1,000 new jobs. This figure does not include additional jobs which will be generated in the investment's ecosystem: Experts expect a positive job effect of 1:6 (Source: ZVEI-Studie). In addition, Infineon is also investing in Dresden through its participation in the joint venture "European Semiconductor Manufacturing Company (ESMC) GmbH". Infineon's Smart Power Fab not only helps strengthen European supply chains in the microelectronics sector, it also further solidifies the position of Dresden and Silicon Saxony as Europe's largest semiconductor hub. The European Commission approved the funding by the German federal government. The Smart Power Fab is being supported by both the European Chips Act and the IPCEI ME/CT innovation program ("Important Project of Common European Interest on Microelectronics and Communication Technologies"). Overall funding for the site from these sources totals approximately one billion euros. Construction of the Smart Power Fab, currently one of Germany's largest building projects, is proceeding as planned, with the building shell currently nearing completion. Infineon held a topping-out ceremony together with all those involved in construction activities in early April this year. Production is to begin in 2026.

Test Generator for up to 2 kA

Learn more:
microtest.net

Product Release
2025-05-08

The Microtest Group introduced the M2 DS5 Quasar, "the smallest 2 kA low inductance dynamic switch test generator, for the test of all types of products on one platform". The tester is suited for high-volume semiconductor production. The M2 DS5 Quasar is designed to test power chips, and the latest WBG (Wide-bandgap) devices made from Silicon Carbide and Gallium Nitride, materials commonly found in consumer power supplies, electric vehicles including trains and battery electric hybrid, industrial motors, HVAC systems and many other applications in the green energy, automotive, power markets, as well as rad-hard (radiation-hardened) devices for space and defence. The tester was developed by the UK subsidiary ipTEST. It is eight times more efficient in overcurrent protection, with a typical response time of under 300 ns. The parasitic inductance has also been reduced by 85 % to 30 nH.

Gallium: From Mining towards the Fab

Learn more:
indium.com

Industry News
2025-05-07

Indium Corporation and Rio Tinto have successfully extracted gallium from feed sourced at Rio Tinto's Vaudreuil alumina refinery in Saguenay, Quebec/Canada. This collaboration is a step in building a more robust global supply chain for gallium. A strategic North American supply will accelerate the development of the project towards commercialization of gallium-based technologies. Indium Corporation designed and developed this gallium extraction process in the United States at its research and development facility in Rome, New York state. Indium Corporation works towards establishing a 3.5-ton demonstration plant which would be located in Saguenay, Quebec, which might then eventually complemented by a commercial-scale capacity of 40 tons annually, addressing an estimated five to 10 percent of global gallium supply.

"The world's lowest Temperature 65-70 W USB-C Modules for installed Applications"

Learn more:
pulsiv.com

Product Release
2025-05-06

Pulsive released of a series of 65 W-70 W USB-C modules. Aimed at installed applications such as wall sockets, desks, and furniture, these fully assembled modules achieve "the world's lowest operating temperature of just 32 °C above ambient with an industry leading efficiency of 97.34 %". USB-C charging in wall sockets, desks, and furniture typically offer power levels of 15-30 W and often struggle to handle multiple devices and/or fast charging. Limitations on physical size and natural airflow cause higher power solutions at 45 W-65 W to reach temperature levels in excess of 80 °C above ambient causing the power supply to either reduce the power to 15 W, or in many cases, cut off altogether. Pulsiv's fully assembled USB-C modules have solved all the challenges relating to heat, size and safety, making it "the only suitable solution for installed applications". It combines Pulsiv OSMIUM optimized PFC technology with an industry standard QR flyback to safely deliver 65 W or 70 W (MacBook compatible). Available in a compact cube or flat module form factor, this GaN-optimised design can operate continuously for more than 8 hours at 100 % load and never exceed 32 °C above ambient. Furthermore, due to its switching method, there is zero inrush current – eliminating the problems caused by power outages where multiple USB-C wall sockets have been installed in a single location. The dimensions of the module, which is switched at 125 kHz, are 36 mm x 36 mm x 40 mm (cube) or 55 mm x 37 mm x 25 mm (flat).

GaN-based 2.5 kW Totem Pole PFC Case Study

Learn more:
camgandevices.com

Product Release
2025-05-06

Cambridge GaN Devices (CGD) announced that Inventchip has successfully demo'd a 2.5 kW GaN-based CCM totem-pole PFC reference design using CGD's ICeGaN® gallium nitride ICs. A key feature is ease-of use. ICeGaN ICs integrate interface circuitry and protection on the same GaN die as the HEMT. Therefore, any standard driver IC can be used. The Inventchip IVCC1104 totem pole PFC controller IC does not require any programming. It offers AC zero-crossing control and robustness against AC disturbance. Inventchip had an existing 2.5 kW TPPFC reference design based on its controller and gate drivers using SiC MOSFETs in TO-247 packages. To evaluate the performance of GaN instead, Inventchip designed a TO-247 adapter board using CGD's P2 25 mΩ ICeGaN ICs and the ICeGaN design works without any modification of their circuits. Soon, EV inverter drives of over 100 kW are expected to transition to GaN too.

1700 V Switcher IC for 800 V BEVs

Learn more:
power.com

Product Release
2025-05-06

Power Integrations announced five new reference designs targeting 800 V automotive applications based on the company's 1700 V InnoSwitch™3-AQ flyback switcher ICs. Spanning power levels from 16 W to 120 W, the designs leverage both wound and low-profile planar transformers and target automotive applications such as DC/DC bus conversion, inverter emergency power, battery management and power supplies for auxiliary systems. The designs feature Power Integrations' wide-creepage InSOP™-28G package, which supports 1000 V_DC on the primary side while providing appropriate creepage and clearance between pins in pollution degree 2 environments. Power consumption is less than 15 mW at no-load. The ICs also incorporate synchronous rectification and a valley switching, discontinuous/continuous conduction mode (DCM/CCM) flyback controller capable of delivering greater than 91 % efficiency. The company provides three reference designs, which are all isolated flyback converters based on the 1700 V-rated CV/CC InnoSwitch3-AQ switcher ICs. The three reference designs kits (RDKs) and two design example reports (DERs) are RDK-994Q (35 W ultra-low-profile traction inverter gate-drive or emergency power supply with 40-1000 V_DC input and 24 V output), RDK-1039Q (18 W power supply with planar transformer for traction inverter gate driver or emergency power supply), RDK-1054Q (120 W power supply with planar transformer, designed to shrink or eliminate heavy, bulky 12 V batteries), DER-1030Q (20 W four-output power supply) and DER-1045Q (16 W four-output power supply).

1200 V SiC MOSFET with Top-Side Cooling and Isolated Thermal Path

Learn more:
semiq.com

Product Release
2025-05-06

SemiQ has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series. The four-strong series of Gen3 MOSFETs delivers continuous drain currents of between 27 and 101 A and pulsed drain current from 70 to 350 A, with device resistances R_DS(on) ranging from 80 to 16 mΩ, respectively. All devices are operational to 175 °C and have been tested to voltages greater than 1400 V, undergoing wafer-level burn-in testing (WLBI) and UIL avalanche testing up to 800 mJ (R_DS(on) = 16 mΩ, 160 mJ for the 80 mΩ device). The devices can be used in parallel and implement top-side cooling as well as an isolated thermal path with a ceramic isolated back paddle. The package includes a driver source kelvin pin for gate driving as well as a gate pin, 5 source pins and a drain tab. The TSPAK MOSFETs offer a lower capacitance, reduced switching losses, longer clearance distance and higher overall system efficiency. SemiQ is targeting the devices at a range of industrial and EV applications, including solar inverters and energy storage, induction heating and welding, EV charging stations and on-board chargers, motor drives, high-voltage DC/DC converters and UPS/switch mode power supplies. All devices in the series are housed in a 18.6 x 14.0 x 3.5 mm³ TSPAK package, have a zero gate voltage drain current of 0.1 µA, a -10/10 nA gate-source leakage current and a 3.5 V gate threshold voltage (cited characteristics measured at 25 °C). The series' cycle times range from 49 ns (80 mΩ MOSFET) to 114 ns (16 mΩ), and the devices have total switching energy of between 153 µJ (80 mΩ MOSFET) and 1565 µJ (16 mΩ).

40 V GaN Power Transistor targets Low-Voltage Silicon Strongholds

Learn more:
epc-co.com

Product Release
2025-05-06

Efficient Power Conversion (EPC) announces the availability of the EPC2366, a 40 V, 0.8 mΩ device designed to displace legacy low-voltage silicon MOSFETs in demanding applications such as high-performance DC/DC converters and synchronous rectifiers. With an R_DS(on) x Q_G figure of merit (10 mΩ·nC), zero reverse recovery, and its thermal performance, the EPC2366 delivers higher efficiency, faster switching, and greater power density than a comparable silicon-based solution. The device is integrated in a 3.3 mm x 2.6 mm PQFN package. The EPC2366 enables higher frequency operation and reduced system size for high density 48 V converters in AI servers and datacom, high frequency synchronous rectifiers, and 24 V battery powered motor drives.

Enhanced Thermal Performance Package Technology

Learn more:
ween-semi.com

Product Release
2025-05-06

WeEn Semiconductors has introduced SiC MOSFETs and Schottky Barrier Diodes (SBDs) in thermally efficient TSPAK packages. These packages will enable engineers to improve efficiency, reduce form factors, extend reliability and lower EMI across a variety of high-power applications. Providing effective heat dissipation from a thermal pad on the surface of the SiC device rather than via a PCB substrate, the company's top-side cooling TSPAK technologies can reduce J-A (junction-to-ambient) thermal resistance by up to 16 % compared to conventional devices. As a result, the packages help to simplify thermal management design, lower losses and increase power density. EMI reduction derives from the fact that the circulating current that creates the magnetic field is no longer blocked by the thermal vias necessary in conventional bottom-side cooling designs and can return to the source directly, minimizing magnetic interference. WeEn's TSPAK SiC technologies are suited to on-board chargers and high-voltage-to-low-voltage DC/DC converters in electric vehicles, automotive HVAC compressors, vehicle charging stations, photovoltaic renewable energy systems and power supplies for computing and telecom servers. TSPAK MOSFETs offer voltage ratings from 650 V to 1700 V and on resistance ratings from 20 to 150 mΩ. TSPAK SBDs are available with voltages from 650 V to 1200 V and current ratings of 10 A to 40 A.

Self-Biasing GaN Flyback Converter

Learn more:
ti.com

Product Release
2025-05-06

Texas Instruments now offers a 65 W dual-port USB PD charger with self-biasing GaN flyback: The UCG28826 is claimed to be "the industry's first self-biasing GaN flyback converter". Designed for next-generation fast-charging applications, the UCG28826 converter delivers 65 W across 90 V_AC to 264 V_AC in this reference design, enabling engineers to meet strict efficiency standards, minimize standby power consumption and increase power density.

Power Switch Architecture for 10 MW and more

Learn more:
menlomicro.com

Product Release
2025-05-06

Menlo Microsystems has announced a scalable power switching architecture that enables its Ideal Switch® to be deployed in advanced power distribution and control systems to 10 MW and beyond. The demonstration system, which was shown at PCIM, is based on the MM9200, a 300 V, 10 A MEMS switch. It utilizes Menlo's Ideal Switch technology to provide an ultra-low on-resistance, metal-on-metal contact to eliminate wasted power. The MM9200 is a high-power SPST micro-electromechanical relay that is smaller, more efficient and has higher performance than equivalent solid-state relay (SSR) and electro-mechanical relay (EMR) alternatives. Arrays of MM9200 switches are configured for microsecond speed protection in 1000 V / 125 A modules. Four modules are combined into hot-swapable systems, and multiple systems are deployed in parallel to scale to accommodate higher power requirements. Unlike other solutions, the negligible power dissipation of the Ideal Switch removes the need for design compromises to accommodate heat management while simultaneously enabling power management and control systems to be constructed in a fraction of the space.

SiC Superjunction Technology

Learn more:
infineon.com

Product Release
2025-05-06

Infineon Technologies has introduced a trench-based SiC superjunction (TSJ) technology concept. This expansion will encompass a diverse range of package types, including discretes, molded and frame-based modules, as well as bare dies – for a broad spectrum of applications, targeting both the automotive and industrial sectors. The first products based on the new technology will be 1200 V in Infineon ID-PAK for automotive traction inverters and combine the advantages of trench technology and superjunction design. This scalable package platform supports power levels of up to 800 kW, enabling system flexibility. Key benefits of the technology include increased power density, achieved through an up to 40 percent improvement in R_DS(on)* A, allowing for more compact designs within a given power class. Additionally, the 1200 V SiC trench-superjunction concept in ID-PAK enables up to 25 percent higher current capability in main inverters without compromising short-circuit capability. As an early customer, Hyundai Motor Company development teams will use the trench-superjunction technology in electrical vehicle drivetrains.

General-Purpose Power Supplies Series

Learn more:
lambda.tdk.com

Product Release
2025-05-06

TDK has introduced the TDK-Lambda brand GUS350 series of compact, single output general-purpose power supplies. The models are rated at 350 W with 12, 24, 36 and 48 V outputs. The GUS350 is convection-cooled and is available with output voltage adjustment function, remote on-off, and DIN-rail mounting bracket options. The GUS350 series provides an alternative source of power for manufacturers who require a higher grade of construction. The GUS350 models measure 101.6 x 41 x 127 mm³ (W x H x D) and have an operating temperature from -20 to +70 °C, with a three-year warranty. Efficiencies are up to 95.5%. Safety certifications include IEC/EN/UL/CSA62368-1 (compliant to IEC61010-1) as well as CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN 55011-B and EN 55032-B conducted and radiated emissions standards and meet EN 61000-3-2 harmonics and IEC 61000-4 immunity standards. The GUS350 series meets IEC 62477-1 (OVC III) and has input-to-output isolation of 2,000 V_DC, input-to-ground 3,000 V_DC, and output-to-ground 500 V_DC. Main applications are light industrial, automation, ATE test systems, LED lighting and broadcast.

Joint Development of Traction SiC Inverters for E-Mobility

Learn more:
cissoid.com

Industry News
2025-05-06

Cissoid and EDAG Group have started a strategic partnership aimed at accelerating the development of next-generation Silicon Carbide traction inverters for electric mobility applications. This collaboration brings together Cissoid's expertise in SiC power semiconductor modules and control solutions with EDAG's engineering know-how in the design, integration, and validation of electric powertrains. By combining their complementary strengths, the two companies aim to offer e-mobility OEMs and equipment suppliers "unmatched technical support and complete solutions for the efficient, reliable, and functionally safe development of SiC-based traction inverters". Special emphasis will be set to "comprehensive engineering services covering inverter system design, thermal management, mechanical integration, functional safety and EMC compliance" in order to enable "accelerated time-to-market through access to ready-to-implement, proven hardware and software solutions". All this is planned to be with "end-to-end technical support, from concept design to prototyping and vehicle integration".

JFET Technology for smarter and faster Solid-State Power Distribution

Learn more:
infineon.com

Product Release
2025-05-05

To enable the next generation of solid-state power distribution systems, Infineon introduced its CoolSiC™ JFET product family. These devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them well-suited for solid-state protection and distribution. With robust short-circuit capability, thermal stability in linear mode, and overvoltage control, CoolSiC JFETs can be used in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches. The first generation of CoolSiC JFETs features an R_DS(ON) starting at 1.5 mΩ (750 V _BDss) and 2.3 mΩ (1200 V _BDss), significantly reducing conduction losses. The bulk-channel optimized SiC JFET offers high robustness under short-circuit and avalanche failure conditions. Housed in a Q-DPAK top-side cooled package, the devices support paralleling and scalable current handling, enabling high-power systems with several layout and integration options. Their predictable switching behavior under thermal stress, overload and fault conditions increases long-term reliability in continuous operation. To meet the thermal and mechanical challenges of harsh application environments, CoolSiC JFETs leverage Infineon's.XT interconnection technology with diffusion soldering. This improves transient thermal impedance and robustness under pulsed and cyclic loads typical of industrial power systems. Tested and qualified under real-world operating conditions of solid-state power switches and based on the industry-standard Q-DPAK package, the devices enable quick and seamless design integration in both industrial and automotive applications.

Inverter Control Modules achieve ISO26262 ASIL-C Ready Certification

Learn more:
cissoid.com

Product Release
2025-05-05

Cissoid announced that its CxT-ICM3S series of Inverter Control Modules (ICMs) have been successfully certified by SGS-TÜV Saar for functional safety, achieving ISO26262 ASIL-C Ready status. This certification underscores Cissoid's commitment to delivering unique, functionally safe and highly customizable solutions that bridge the gap between discrete hardware components and off-the-shelf inverters, enabling optimized power electronics design for electric vehicles and industrial applications. These ICMs are pre-qualified, functionally safe solution that combines the efficiency of off-the-shelf systems with the customizability of discrete hardware components. This best-of-both-worlds approach enables manufacturers to tailor their inverter designs to specific voltage, power, and motor control requirements - accelerating development while ensuring safety and performance. They offer hardware and software flexibility to adapt to specific motor, voltage, and power requirements. For example, the CXT-ICM3SA Series of 3-Phase SiC ICMs provides field-proven inverter control technology with customizable hardware interfaces allowing developers to fine-tune their inverters to maximize efficiency and reliability while ensuring compliance with strict safety standards.

Automotive-qualified 1200 V SiC MOSFETs in D²PAK-7 Packaging

Learn more:
nexperia.com

Product Release
2025-05-05

Nexperia announced a range of efficient and robust automotive-qualified silicon carbide MOSFETs with R_DS(on) values of 30, 40 and 60 mΩ. These devices (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q) were previously offered in industrial grade and have now been awarded AEC-Q101 certification. This makes them suitable for automotive applications like onboard chargers (OBC) and traction inverters in electric vehicles (EV) as well as for DC/DC converters, heating ventilation and air-conditioning systems (HVAC). These switches are housed in the increasingly popular surface mounted D²PAK-7 package, which is more suitable for automated assembly operations than through-hole devices. Concentrating on the nominal R_DS(on) value neglects the fact that it can increase by more than 100 % as device operating temperatures rise, resulting in considerable rise of conduction losses. The temperature stability is even more critical when SMD package technologies are used compared to through-hole technology since devices are cooled through the PCB. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and focused the temperature stability of its SiC MOSFETs, with the nominal value of R_DS(on) increasing by 38 % over an operating temperature range from 25 °C to 175 °C. This feature enables engineers to address higher output power in their applications achieved with a higher nominal 25 °C rated R_DS(on) without sacrificing performance. Nexperia is planning to release automotive-qualified versions of its 17 mΩ and 80 mΩ R_DS(on) SiC MOSFETs in 2025.

Proof of Concept for integrating Current Sensor into Power Module

Learn more:
akm.com

Industry News
2025-05-02

Asahi Kasei Microdevices (AKM) and Silicon Austria Labs (SAL) have successfully completed a joint proof of concept for integrating a current sensor into a power module to be used in automotive applications such as traction inverters and DC/DC converters. This technology enables energy efficiency, as well as compact and lightweight design for ultra-high current applications using next-generation SiC power devices. AKM is developing the EZ232L, a linear Hall IC for coreless current sensors. With its resolution and accuracy, this technology is said to enhance the efficiency of traction inverters that require operation over a wide current range. AKM collaborated with the Austrian research center SAL to conduct a joint technical verification, using EZ232L to develop a power module that integrates a current sensor in order to address the limitations of conventional magnetic core-based current sensing.

AC/DC Power Supplies delivering 20 W

Learn more:
recom-power.com

Product Release
2025-05-01

In new energy applications, AC/DC power supplies increasingly must operate over nominal supply values from 100 V_AC to 277 V_AC. The recently launched RAC20NE-K/277 from Recom matches this with 20 W available at optional 12, 24, or 36 V_DC outputs. Encapsulated versions are available with constant voltage or constant current limiting characteristics and a constant voltage open frame type with 12 or 24 V_DC output. The RAC20NE-K/277 series allows reliable operation at full load to 60 °C ambient, and to 85 °C with derating. The parts are Class II insulated, OVC III rated to 3000 m altitude (OVC II/5000m) and meet EN 55032 'Class B' EMC requirements with a floating or grounded output. Standby and no-load power dissipation meet Eco-design requirements. The RAC20NE-K/277 board-mount, encapsulated parts are sized 52.5 mm x 27.6 mm x 23.0 mm while the open frame parts with Molex connections measure 80.0 mm x 23.8 mm x 22.5 mm.

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Large-size Ferrite Cores with different Shapes	TDK Corporation added large-size ferrite cores wit...	12486	Product Release	Large-size Ferrite Cores with different Shapes	TDK Corporation added large-size ferrite cores with different core shapes. These are used in a range of industrial applications such as motor drives, EV charging stations, various railway/traction applications, power transformers, welding, medical, uninterruptible power supplies (UPS), solar inverters, and other renewable energy applications. These cores allow for optimizing magnetic design for efficiency and thermal performance. The standardized large-size core program contains E, U, I, PM, and PQ cores in the N27, N87, N88, N92, N95, and N97 power materials. Accessories like coil former and mounting hardware are available.	24.07.2025 11:30:00	Jul	news_2025-08-01_14.jpg	\images\news_2025-08-01_14.jpg	https://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-introduces-various-large-size-ferrite-cores-with-different-shapes-for-a-wide-range-of-industrial-applications-/3616864	tdk-electronics.tdk.com
Company Location in South Africa added	Another Würth Elektronik branch opened in Brackenf...	12478	Industry News	Company Location in South Africa added	Another Würth Elektronik branch opened in Brackenfell, Western Cape, South Africa. The location operates under the name Wurth Electronics South Africa (Pty.) Ltd and will serve local customers, but will also be responsible for the markets of Botswana, Mauritius, Namibia, Tanzania and Zambia. Ahmet Çakir, who also heads the branch in Turkey, will take over the management of the new location, under the leadership of Rob Sperring, Vice President for Southern Europe, Middle East and Africa. The Wurth Electronics South Africa (Pty.) Ltd team currently consists of six employees. However, it will soon be expanded. The official opening ceremony for the new location will take place in early 2026. Four EMC seminars held by Würth Elektronik in South Africa's two largest cities, Cape Town and Johannesburg, have already been completed.	24.07.2025 11:00:00	Jul	news_2025-08-01_6.jpg	\images\news_2025-08-01_6.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=New-location-in-South-Africa	we-online.com
Professorship to Accelerate Wide Bandgap Semiconductor Research	Global semiconductor manufacturer Nexperia and the...	12474	Industry News	Professorship to Accelerate Wide Bandgap Semiconductor Research	Global semiconductor manufacturer Nexperia and the Hamburg University of Technology (TU Hamburg) have launched an endowed professorship in power electronic devices – a crucial field for the advancement of energy-efficient technologies. The position, held by Prof. Dr.-Ing. Holger Kapels will drive research into next-generation semiconductor components and train highly skilled engineers at TU Hamburg’s School of Electrical Engineering, Computer Science and Mathematics. As part of this initiative, Prof. Kapels will also lead the newly founded Institute for Power Electronic Devices. In his inaugural lecture, titled "Innovative Power Semiconductor Devices as a Key Technology for an Electrified Future," Prof. Kapels outlined how compound semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) are enabling transformative improvements in energy efficiency – particularly in electric vehicles, industrial systems, and data centers. Wide bandgap (WBG) materials such as SiC, GaN, and aluminum scandium nitride (AlScN) allow for higher switching frequencies, lower conduction losses, and more compact device footprints. compared to traditional silicon. The new institute will focus on power semiconductors based on Silicon, SiC, GaN and aluminum scandium nitride (AlScN), new device architectures, including vertical GaN structures and machine-learning-based fault prediction systems. Additional research priorities include modeling the reliability and ruggedness of power devices under extreme operating conditions.	18.07.2025 07:00:00	Jul	news_2025-08-01_2.JPG	\images\news_2025-08-01_2.JPG	https://www.nexperia.com/about/news-events/news/nexperia-and-tu-hamburg-launch-endowed-chair-in-power-electronics-to-drive-energy-efficient-innovation	nexperia.com
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Partnership on Silicon Carbide Solutions for Power Management	Microchip Technology announced that under a new pa...	12476	Industry News	Partnership on Silicon Carbide Solutions for Power Management	Microchip Technology announced that under a new partnership agreement with Delta Electronics the companies will collaborate to use Microchip’s mSiC™ products and technology in Delta’s designs. The synergies between the companies aim to accelerate the development of innovative SiC solutions, energy-saving products and systems that enable a more sustainable future. Delta intends to leverage Microchip’s experience and technology in SiC and digital control to accelerate time to market of its solutions for high-growth market segments such as AI, mobility, automation and infrastructure. This agreement prioritizes the companies’ resources to validate Microchip’s mSiC solutions to fast-track implementation in Delta’s designs and programs. Other key advantages of the agreement are top-tier design support including technical training as well as insight into R&D activities and early access to product samples.	17.07.2025 09:00:00	Jul	news_2025-08-01_4.jpg	\images\news_2025-08-01_4.jpg	https://www.microchip.com/en-us/about/news-releases/products/microchip-enters-into-partnership-agreement-with-delta-electronics	microchip.com
150 V and 200 V MOSFETs “with industry-leading Figures of Merit”	iDEAL Semiconductor’s SuperQ™ technology has...	12483	Product Release	150 V and 200 V MOSFETs “with industry-leading Figures of Merit”	iDEAL Semiconductor’s SuperQ™ technology has entered full production, with the first products being 150 V MOSFETs. A family of 200 V MOSFETs is sampling. SuperQ is said to be “the first significant advance in silicon MOSFET design in more than a quarter of a century and delivers unmatched performance and efficiency in silicon power devices”. It almost doubles the n-conduction region (up to 95%) and reduces switching losses by up to 2.1x versus competing devices while operation at up to 175 °C junction temperature. The first product in iDEAL’s 150 V MOSFET series, iS15M7R1S1C, is a 6.4 m&ohm; MOSFET. It is available immediately in a 5 x 6 mm<sup>2</sup> PDFN package. The SMT package includes exposed leads to simplify assembly and improve board level reliability. The 200 V family includes the iS20M6R1S1T, a 6.1 m&ohm; MOSFET in a 11.5 x 9.7 mm<sup>2</sup> TOLL package. This has an R<sub>DSon</sub> of 6.1 m&ohm;, which is claimed to be “10% lower than the current industry leader and 36% lower than the next best competitor”. The company is also sampling 200 V MOSFETs in TOLL, TO-220, D2PAK-7L and PDFN packages. 250V, 300 V and 400 V MOSFET platforms are promised to be coming soon.	17.07.2025 08:30:00	Jul	news_2025-08-01_11.jpg	\images\news_2025-08-01_11.jpg	https://idealsemi.com/ideals-superq-technology-powers-into-production-reveals-150-v-and-200-v-mosfets-with-industry-leading-figures-of-merit/	idealsemi.com
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TVS Diodes cut Clamping Voltage	Littelfuse launched the 5.0SMDJ-FB TVS Diode Serie...	12490	Product Release	TVS Diodes cut Clamping Voltage	Littelfuse launched the 5.0SMDJ-FB TVS Diode Series, a 5000 W surface-mount solution in a DO-214AB package engineered to protect sensitive DC power lines from overvoltage transients. This series incorporates foldback technology, which delivers up to 15% lower clamping voltage (V<sub>C</sub>) compared to traditional solutions, while maintaining Breakdown Voltage (V<sub>BR</sub>) above the Reverse Standoff Voltage (V<sub>R</sub>). It is a drop-in replacement to legacy 5.0SMDJ series with the same DO-214AB (SMC) footprint. These devices protect DC power lines across a variety of demanding applications, including Power over Ethernet (PoE) systems, AI and data center servers, ICT equipment power supplies and industrial DC power distribution.	15.07.2025 15:30:00	Jul	news_2025-08-01_18.jpg	\images\news_2025-08-01_18.jpg	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/new-littelfuse-tvs-diodes-cut-clamping-voltage-by-up-to-15-for-dc-line-protection	littelfuse.com
1 W Current Sense Chip Resistor Series	Stackpole Electronics expanded the CSSH Series of ...	12485	Product Release	1 W Current Sense Chip Resistor Series	Stackpole Electronics expanded the CSSH Series of current sense chip resistors with a 0805 version for high power density applications. This component is designed to be used in power modules, frequency converters, battery management systems, as well as automotive and EV controls. The CSSH0805 delivers 1 W power handling in a 0805 footprint. With resistance values as low as 0.5 milliohm and TCR from 50 to 100 ppm, it matches the performance of larger 1206 and 2010 resistors.	14.07.2025 10:30:00	Jul	news_2025-08-01_13.png	\images\news_2025-08-01_13.png	https://www.seielect.com/news/en/20250714%20cssh0805.pdf	seielect.com
Jennifer Lloyd Announced Chief Executive Officer	Power Integrations announced that Jennifer A. Lloy...	12473	People	Jennifer Lloyd Announced Chief Executive Officer	Power Integrations announced that Jennifer A. Lloyd, PhD will be the company’s next chief executive officer, succeeding Balu Balakrishnan, who has served as CEO since 2002. A former member of Power Integrations’ board of directors, Dr. Lloyd has been reappointed to the company’s board. Dr. Lloyd holds doctoral, master’s and bachelor’s degrees in electrical engineering and computer science from the Massachusetts Institute of Technology. Author of numerous technical papers and recipient of eight U.S. patents, she has also been active in the IEEE community, having served on the technical program committee for the International Solid-State Circuits Conference (ISSCC), the Custom Integrated Circuits Conference (CICC) and the VLSI Symposia (VLSI). Mr. Balakrishnan plans to serve as executive chairman of Power Integrations’ board of directors for approximately six months to ensure a smooth leadership transition; he is expected to remain a non-executive member of the board thereafter. Bala Iyer will remain in the role of lead independent director.	14.07.2025 06:00:00	Jul	news_2025-08-01_1.jpg	\images\news_2025-08-01_1.jpg	https://investors.power.com/news/news-details/2025/Power-Integrations-Names-Jennifer-Lloyd-as-Its-Next-CEO/default.aspx	power.com
dataTec Innovation Day	dataTec and selected partner companies are hosting...	12439	Event News	dataTec Innovation Day	dataTec and selected partner companies are hosting an Innovation Day on September 25, 2025, in Stuttgart - bringing together theory, practice, and product worlds. Experience the latest developments up close and discover how ideas turn into real solutions. A day full of knowledge, exchange, and hands-on experience. Whether you're looking to dive deep into a specific topic or gain a broad overview, Innovation Day offers valuable insights for engineers, technicians, developers, users, and decision-makers.	11.07.2025 06:00:00	Jul	news_2025-07-15_1.jpg	\images\news_2025-07-15_1.jpg	https://www.datatec.eu/de/en/innovationstag	datatec.eu
47 µF Multilayer Ceramic Capacitor in 0402-inch Size	Murata has begun “the world’s first mass productio...	12488	Product Release	47 µF Multilayer Ceramic Capacitor in 0402-inch Size	Murata has begun “the world’s first mass production of the 0402-inch size (1.0 × 0.5 mm<sup>2</sup>) multilayer ceramic capacitors (MLCC) with a capacitance of 47 µF. The devices are available in two variants with different temperature characteristics. Compared to Murata’s conventional 0603-inch size product with the same capacitance, this new capacitor reduces mounting area by approximately 60 %. Additionally, it delivers about 2.1 times the capacitance of Murata’s previous 22 µF product in the same 0402-inch size. The MLCC is available in two variants – the X5R (EIA) GRM158R60E476ME01 with an operating temperature range of -55 to +85 °C, and the X6S (EIA) GRM158C80E476ME01 with an operating temperature range of -55 to +105 °C. Both devices feature a ±20% tolerance and rated voltage of 2.5Vdc.	10.07.2025 13:30:00	Jul	news_2025-08-01_16.jpg	\images\news_2025-08-01_16.jpg	https://www.murata.com/en-eu/news/capacitor/ceramiccapacitor/2025/0710	murata.com
Semi-Shielded Power Inductors	Bourns has added five product series to the existi...	12487	Product Release	Semi-Shielded Power Inductors	Bourns has added five product series to the existing Bourns SRN-BTA family of semi-shielded power inductors. The semi-shielded construction combines the advantages of both non-shielded and shielded inductor designs. The five additional devices use bottom-soldered lead-wires for increased mechanical strength and stability in applications in automotive systems, DC/DC converters, and power supplies across consumer, industrial and telecom electronics. These models are AEC-Q200 compliant and automotive grade.	10.07.2025 12:30:00	Jul	news_2025-08-01_15.jpg	\images\news_2025-08-01_15.jpg	https://www.bourns.com/news/press-releases/pr/2025/07/10/bourns-expands-semi-shielded-power-inductor-portfolio-with-new-series-featuring-higher-maximum-inductance-values	bourns.com
Level 3 SPICE Models featuring enhanced Simulation Speed	ROHM has announced the release of new Level 3 (L3)...	12484	Product Release	Level 3 SPICE Models featuring enhanced Simulation Speed	ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs were precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement. The L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase. By the end of April 2025, ROHM has released 37 L3 models for its 4<sup>th</sup> Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.	10.07.2025 09:30:00	Jul	news_2025-08-01_12.jpg	\images\news_2025-08-01_12.jpg	https://www.rohm.com/news-detail?news-title=2025-07-10_topics_spice&defaultGroupId=false	rohm.com
1200 V SiC Schottky Diodes	Nexperia announced the addition of two 1200 V 20 A...	12482	Product Release	1200 V SiC Schottky Diodes	Nexperia announced the addition of two 1200 V 20 A silicon carbide Schottky diodes. The PSC20120J and PSC20120L have been designed to address ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are suited for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications. These Schottky diodes deliver temperature-independent capacitive switching and zero recovery behavior while it is claimed that the “switching performance is almost entirely independent of current and switching speed variations”. This PSC20120J is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount device power plastic package, while the PSC20120L is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package suited for operating temperatures up to 175 °C.	10.07.2025 07:30:00	Jul	news_2025-08-01_10.png	\images\news_2025-08-01_10.png	https://www.nexperia.com/about/news-events/press-releases/nexperia-boosts-wide-bandgap-portfolio-with-1200-V-SiC-Schottky-diodes-for-power-intense-infrastructure	nexperia.com
GaN-Based Motor Drive Reference Design for Humanoid Robots	Efficient Power Conversion Corporation (EPC) intro...	12481	Product Release	GaN-Based Motor Drive Reference Design for Humanoid Robots	Efficient Power Conversion Corporation (EPC) introduces the EPC91118, which is claimed to be “the first commercially available reference design to integrate gallium nitride (GaN) IC technology for humanoid robot motor joints”. Optimized for space-constrained and weight-sensitive applications such as humanoid limbs and compact drone propulsion, the EPC91118 delivers up to 15 A<sub>RMS</sub> per phase from a 15 V to 55 V DC input in a compact circular form factor. At the heart of the EPC91118 is the EPC23104 ePower™ Stage IC, a monolithic GaN IC that enables higher switching frequencies and reduced losses. The GaN-based power stage is combined with current sensing, a rotor shaft magnetic encoder, a microcontroller, RS485 communications, and 5 V and 3.3 V power supplies - all on a single board that fits entirely within a 32 mm diameter footprint. Each of the phases of a 3-phase BLDC motor can be driven with 15 A<sub>RMS</sub> at a PWM frequency of 100 kHz with 50 ns dead time. The fully integrated board includes a controller, sensor and power conversion and uses MLCC-only DC link capacitors to reduce size and to increase liability. While the inverter has a diameter of 32 mm, the external frame’s diameter is 55 mm.	10.07.2025 06:30:00	Jul	news_2025-08-01_9.jpg	\images\news_2025-08-01_9.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3226/first-gan-based-motor-drive-reference-design-for-humanoid-robots-delivers-up-to-15-arms-in-an-ultra-compact-format	epc-co.com
Compact MOSFET for Fast Charging Applications	ROHM has developed a 30 V N-channel MOSFET named A...	12453	Product Release	Compact MOSFET for Fast Charging Applications	ROHM has developed a 30 V N-channel MOSFET named AW2K21 in a common-source configuration that achieves "an industry-leading ON-resistance of 2.0 mΩ (typ.) in a compact 2.0 mm × 2.0 mm package". Compact devices featuring large-capacity batteries, such as smartphones, need fast charging functionalities requiring bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. The maximum current rating for these applications is 20A, with a breakdown voltage between 28 V and 30 V, and an ON-resistance of 5 mΩ or less. The AW2K21 consists of two MOSFETs integrated into a single package, allowing a single part to support bidirectional protection applications. Application examples are smartphones, VR headsets, compact printers, tablets, wearables, LCD monitors, laptop computers, portable gaming consoles or drones.	08.07.2025 13:30:00	Jul	news_2025-07-15_15.jpg	\images\news_2025-07-15_15.jpg	https://www.rohm.com/news-detail?news-title=2025-07-08_news_mosfet&defaultGroupId=false	rohm.com
Avnet announces Gilles Beltran as new President	Avnet has appointed Gilles Beltran as President of...	12480	People	Avnet announces Gilles Beltran as new President	Avnet has appointed Gilles Beltran as President of Avnet EMEA. Currently President of Avnet Silica, one of Avnet’s European semiconductor specialist divisions, Gilles Beltran will be succeeding Slobodan Puljarevic and Mario Orlandi, who have co-led the EMEA region with distinction for seven years. As the EMEA President, Gilles Beltran will have the Presidents of the Avnet Abacus, EBV Elektronik, and Avnet Silica business units reporting to him. Gilles Beltran joined Avnet Silica in 2002, bringing more than two decades of company-specific experience and know-how to this new role – including four years as President of Avnet Silica.	07.07.2025 13:00:00	Jul	news_2025-08-01_8.jpg	\images\news_2025-08-01_8.jpg	https://news.avnet.com/press-releases/press-release-details/2025/Avnet-announces-Gilles-Beltran-as-new-President-2025-L2mYakgpJA/default.aspx	avnet.com
Supervisory Board appoints Alexander Gorski Chief Operations Officer	Dr. Rutger Wijburg, Member of the Management Board...	12443	People	Supervisory Board appoints Alexander Gorski Chief Operations Officer	Dr. Rutger Wijburg, Member of the Management Board and Chief Operations Officer (COO) of Infineon Technologies, will resign from his position at the end of the fiscal year on 30 September 2025 at his own request and will retire after being a member of the Management Board of Infineon Technologies and Chief Operations Officer since April 2022. The Supervisory Board has appointed Alexander Gorski as his successor, effective as of 1 October 2025. Alexander Gorski is currently Executive Vice President and Head of Frontend Operations at Infineon and will be responsible for Operations, Procurement, Supply Chain and Quality Management in his new position as COO. His mandate as Chief Operations Officer will last for three years as is customary for first appointments. As Head of Backend and later as Head of Frontend Operations, Alexander Gorski has strategically developed Infineon's manufacturing landscape over the last few years. After completing his MBA at the University of Regensburg, he began his career at Infineon (until 1999 Siemens) in 1998 and subsequently took on various management positions in the areas of Operations, Supply Chain and Sales. Alexander Gorski worked for a solar company as a board member and managing director for seven years. He returned to Infineon in 2016 as COO of the Power & Sensor Systems division, becoming Head of Backend in 2021 and Head of Frontend in 2024.	07.07.2025 10:00:00	Jul	news_2025-07-15_5.jpg	\images\news_2025-07-15_5.jpg	https://www.infineon.com/press-release/2025/INFXX202507-123	infineon.com
ESD Protection Diodes for 48 V EV Communications Networks	Nexperia introduced "the industry's first ESD diod...	12452	Product Release	ESD Protection Diodes for 48 V EV Communications Networks	Nexperia introduced "the industry's first ESD diodes designed to protect 48 V automotive data communications networks against the destructive effects of electrostatic discharge (ESD) events". These six AEC-Q101 qualified devices covers the required higher reverse working maximum voltage (V<sub>RWM</sub>) for increasingly common 48 V board nets. This saves PCB space and system cost while maintaining signal integrity even at higher data rates. While data communications protocols like CAN and CAN-FD, as well as LIN and FlexRay have been around for several decades, their proven reliability in lower speed applications means they continue to feature in even the most recent automobiles, including (H)EVs. However, unlike conventional internal combustion engine powered vehicles that have a 12 V battery, or commercial vehicles that feature a 24 V battery, the higher efficiency requirements of EVs and HEVs mean they are increasingly moving towards using a 48 V battery to power various electrical systems, including these legacy communications networks. The family consists of ESD diodes with 54 V (PESD2CANFD54VT-Q and PESD2CANFD54LT-Q), 60 V (PESD2CANFD60VT-Q and PESD2CANFD60LT-Q) and 72 V (PESD2CANFD72VT-Q and PESD2CANFD72LT-Q) maximum V<sub>RWM</sub>. These devices with a capacitance down to 3.4 pF are packaged in a standard SOT23 package. The optimized capacitance ensures that signal integrity is not impacted even in higher-speed protocols like CAN-FD.	02.07.2025 12:30:00	Jul	news_2025-07-15_14.jpg	\images\news_2025-07-15_14.jpg	https://www.nexperia.com/about/news-events/press-releases/Nexperia-releases-industry-s-first-ESD-protection-diodes-for-48-V-EV-communications-networks	nexperia.com
Steve Sanghi to Continue as CEO and President	Microchip Technology Incorporated announced that S...	12444	People	Steve Sanghi to Continue as CEO and President	Microchip Technology Incorporated announced that Steve Sanghi has agreed to continue to serve as the company's Chief Executive Officer and President on a permanent basis. Mr. Sanghi had been serving in such roles on an interim basis since November 2024. Mr. Sanghi will also continue to serve as Chair of the Microchip Board of Directors. Prior to his retirement as Microchip's CEO in 2021, Mr. Sanghi had served as Microchip's CEO for almost 30 years. Mr. Sanghi commented, "I have been a leader of Microchip for over 30 years and look forward to continuing to serve the company on a long-term basis. Although several of the elements of our recovery plan have been completed or substantially implemented, some of the other elements of the plan, such as achieving our long-term operating model, will require sustained efforts. I am thankful that the Board is entrusting me to continue to guide the company towards achievement of its goals."	02.07.2025 11:00:00	Jul	news_2025-07-15_6.jpg	\images\news_2025-07-15_6.jpg	https://ir.microchip.com/news-events/press-releases/detail/1322/steve-sanghi-to-continue-as-microchip-ceo-and-president-on-a-permanent-basis	microchip.com
Acquisition to expand T&M Portfolio for Power Electronics	Rohde & Schwarz has acquired ZES ZIMMER Electronic...	12442	Industry News	Acquisition to expand T&M Portfolio for Power Electronics	Rohde & Schwarz has acquired ZES ZIMMER Electronic Systems GmbH. The privately owned company based in Oberursel/Germany, has been designing, developing and manufacturing high-precision power measurement equipment for four decades. The acquisition complements the Rohde & Schwarz (R&S) test and measurement product portfolio and is considered by R&S to be "an important step that contributes to the company's long-term growth strategy and will benefit the customers of both companies". The family owned ZES ZIMMER Electronic Systems with around sixty employees will be fully integrated into the Rohde & Schwarz group. The location will be retained and will continue to be used for power measurement equipment.	02.07.2025 09:00:00	Jul	news_2025-07-15_4.jpg	\images\news_2025-07-15_4.jpg	https://www.rohde-schwarz.com/about/news-press/all-news/rohde-schwarz-acquires-zes-zimmer-electronic-systems-gmbh-and-expands-its-t-m-portfolio-for-power-electronics-press-release-detailpage_229356-1571283.html	rohde-schwarz.com
Series of DC Energy Meters for Fast and Megawatt EV Chargers	LEM introduced the DCES600 and DCES1500 meters to ...	12454	Product Release	Series of DC Energy Meters for Fast and Megawatt EV Chargers	LEM introduced the DCES600 and DCES1500 meters to enable DC charging infrastructure manufacturers to design both fast and megawatt charging solutions, with kilowatt-hour (kWh) billing services in applications up to e-truck charging. They are designed to achieve class B accuracy at charger level with currents of up to 1500 A, at operating temperatures from –40 °C to +85 °C without derating. Their accuracy is maintained across the entire current range, for precise measurements throughout the full charging cycle, from high currents at the start to low currents near completion. Designers can access the DCES meters over an RS485 communication interface that provides cybersecurity features. These features include authentication of measurements using digital signatures, and facilities that enable secure remote maintenance and firmware updates. LEM is also offering a set of application programming interfaces (APIs) for software integration, and other software tools to ease testing and product integration. The DCES meters are available with an optional remote display unit, the RDU, which can be mounted on a front panel, DIN rail, or base plate without needing additional connections, such as communications lines or power sources, other than its link to the DCES meters. The devices offer real-time reporting of voltage, current, temperature and energy. LEM is now in the process of the certification of the DCES series by the end of the year. The DCES meters will then be compliant with European regulations such as MID 2014/32/EU, the EU's Directive on measuring instruments, and with Eichrecht, the German calibration law.	01.07.2025 14:30:00	Jul	news_2025-07-15_16.jpg	\images\news_2025-07-15_16.jpg	https://www.lem.com/en/dces	lem.com
DC Meters for High-Power and Megawatt Charging	Isabellenhütte introduces the IEM-DCR, the second ...	12451	Product Release	DC Meters for High-Power and Megawatt Charging	Isabellenhütte introduces the IEM-DCR, the second generation of DC meters that meet the requirements of accurate energy measurement for charging infrastructure and legally compliant billing. Isabellenhütte currently offers several versions of the DC meter. The IEM-DCR-125, with a current measurement range of 125 A and voltage of 1,000 V, is suitable for DC wall boxes. The IEM-DCR-1000, with up to 1,000 A and an extended voltage range of 1,500 V, is designed for high-power charging up to 1.5 MW. It is claimed to be "the first meter on the market to cover the 1,500 V voltage class". The IEM-DCR-1500, with 1,500 A and also a voltage range up to 1,500 V, is suited for megawatt charging applications and is currently undergoing certification. The IEM-DCR meters consist of separate display and sensor units for direct integration into charging stations. A further development compared to the first generation of meters is a CAN interface for the transmission of real-time measurement data (current, voltage, temperature and power). In addition, this generation allows bi-directional measurements and the creation of charging transactions in OCMF format. The energy meters also offer two options for compensating for cable losses. The IEM-DCR-125 and IEM-DCR-1000 have been certified and meet Accuracy Class B (EN 50470) and Class 1 (IEC 62053-41). In addition to the certification under German calibration law, the meters are also certified under the EU Measuring Instruments Directive (MID).	01.07.2025 11:30:00	Jul	news_2025-07-15_13.jpg	\images\news_2025-07-15_13.jpg	https://www.isabellenhuette.com/news/dc-meters-for-high-power-and-megawatt-charging	isabellenhuette.com
Joint 200 mm GaN Production planned	Navitas Semiconductor announced a strategic partne...	12477	Industry News	Joint 200 mm GaN Production planned	Navitas Semiconductor announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC), to start production and continue development of 200 mm GaN-on-silicon technology. Navitas' GaN IC portfolio is expected to use Powerchip’s 200 mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has been operational since 2019 and supports various high-volume manufacturing processes for GaN, ranging from micro-LEDs to RF GaN devices. Powerchip’s capabilities include a 180 nm CMOS process which is claimed to offer “smaller and more advanced geometries, which bring improvements in performance, power efficiency, integration, and cost”. Powerchip is expected to manufacture Navitas’ GaN portfolio with voltage ratings from 100 V to 650 V, supporting the growing demand for GaN for 48 V infrastructure, including hyper-scale AI data centers and EVs. The partnership is expected to “strengthen supply chain, drive innovation, and improve cost efficiency - supporting GaN’s ramp into AI data centers, EVs, solar, and home appliances”. Qualification of initial devices is expected in Q4/2025. The 100 V family is expected to start production first at Powerchip within the first six months of 2026, while the company expects 650 V devices will transition from Navitas’ existing supplier, TSMC, to Powerchip over the next 12-24 months.	01.07.2025 10:00:00	Jul	news_2025-08-01_5.jpg	\images\news_2025-08-01_5.jpg	https://navitassemi.com/navitas-announces-plans-for-200mm-gan-production-with-psmc/	navitassemi.com
GaN FETs for High-Density Power Conversion	Renesas introduced three high-voltage 650 V GaN FE...	12446	Product Release	GaN FETs for High-Density Power Conversion	Renesas introduced three high-voltage 650 V GaN FETs for AI data centers and server power supply systems including the 800 V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures. The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices are based on low-loss d-mode technology and claimed to "offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings". Moreover, they are marketed to "minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4 V threshold voltage, which is not achievable with today's enhancement mode (e-mode) GaN devices". Built on a die that is 14 percent smaller than the previous Gen IV platform, the Gen IV Plus products achieve a lower R<sub>DS(on)</sub> of 30 mΩ, reducing on-resistance by 14 % and delivering a 20 % improvement in on-resistance output-capacitance-product figure of merit (FOM). These features make the Gen IV Plus devices suitable for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades.	01.07.2025 06:30:00	Jul	news_2025-07-15_8.jpg	\images\news_2025-07-15_8.jpg	https://www.renesas.com/en/about/newsroom/renesas-strengthens-power-leadership-new-gan-fets-high-density-power-conversion-ai-data-centers	renesas.com
Power Management IC Textbook	Wiley-IEEE Press has published "Design of Power Ma...	12441	Industry News	Power Management IC Textbook	Wiley-IEEE Press has published "Design of Power Management Integrated Circuits" by Bernhard Wicht. Spanning 457 pages, this book delivers an in-depth exploration of both foundational principles and cutting-edge innovations in power management integrated circuits (PMICs). It covers key functions such as power stages, gate Drivers, Semiconductor Devices, and Integrated Passives, and extends to LDOs, Charge Pumps, and various DC-DC Converters. A key feature of the text is its extensive collection of real-world examples, case studies, and exercises aimed at enhancing the understanding of complex design concepts and providing extensive guidance for electronics engineers. Bernhard Wicht, a Full Professor at Leibniz University Hannover, Germany, brings extensive experience from both the semiconductor industry and academia as well as contributions as part of the ISSCC Technical Program Committee and as an IEEE Distinguished Lecturer. As a guide, this publication is intended for designers, engineers, and students eager to deepen their PMIC expertise and drive advancements in high-performance computing, IoT, mobility, and renewable energy sectors.	27.06.2025 08:00:00	Jun	news_2025-07-15_3.jpg	\images\news_2025-07-15_3.jpg	https://www.wiley.com/en-gb/Design+of+Power+Management+Integrated+Circuits-p-9781119123064	wiley.com
"MLCCs with the Industry's highest Capacitance at 100 V for Commercial Applications in the 1608 Case Size"	TDK Corporation has expanded its C series for comm...	12438	Product Release	"MLCCs with the Industry's highest Capacitance at 100 V for Commercial Applications in the 1608 Case Size"	TDK Corporation has expanded its C series for commercial multilayer ceramic capacitors (MLCCs) to 1 µF at 100 V in the 1608 size (1.6 mm x 0.8 mm x 0.8 mm – L x W x H), with X7R characteristics. This is claimed to be "the industry's highest capacitance for a 100-V-rated product in this size and this temperature characteristic". "This 100-V product of the C series achieves ten times the capacity of conventional products of the same size". Main applications are input capacitors for power supply ICs used in commercial and industrial 48-V systems, etc.	26.06.2025 16:30:00	Jun	news_2025-07-01_18.jpg	\images\news_2025-07-01_18.jpg	https://www.tdk.com/en/news_center/press/20250626_01.html	tdk.com
Off-the-Shelf Radiation-Hardened 15 W DC/DC Power Converter for Space Applications	Microchip Technology announced the SA15-28 off-the...	12437	Product Release	Off-the-Shelf Radiation-Hardened 15 W DC/DC Power Converter for Space Applications	Microchip Technology announced the SA15-28 off-the-shelf radiation-hardened DC/DC 15 W power converter with a companion SF100-28 EMI filter that are designed to meet MIL-STD-461 specifications. This space-grade power device is a standard, non-hybrid DC/DC isolated power converter with a companion electromagnetic interference (EMI) filter that operates from a 28 V satellite bus in harsh environments. The SA15-28 is available with 5 V triple outputs that are usable with point-of-load converters and LDO linear regulators to power FPGAs and MPUs. The SA15-28 weighs 60 g and operates in the temperature range from -55 °C to +125 °C while offering a radiation tolerance up to 100 krad TID. The SF100-28 EMI noise suppression filter can be used with numerous power converters with a total output power of up to 100 W. For added flexibility in space applications, the SA15-28 and SF100-28 are fully compatible with Microchip's existing SA50 series of power converters and SF200 filter.	26.06.2025 15:30:00	Jun	news_2025-07-01_17.jpg	\images\news_2025-07-01_17.jpg	https://www.microchip.com/en-us/about/news-releases/products/new-off-the-shelf-radiation-hardened-15w-dc-dc-power-converter	microchip.com
Power Supply Unit for Flux Gate Technology Current Transducers	Danisense has introduced the DSSIU-1-V, a low-nois...	12455	Product Release	Power Supply Unit for Flux Gate Technology Current Transducers	Danisense has introduced the DSSIU-1-V, a low-noise power supply and interface unit designed to support a range of its flux gate current transducers (DCCTs). Featuring an industry-standard D-sub-9 connector, the DSSIU-1-V unit measures 130 mm x 116 mm x 56 mm and is equipped with an integrated Voltage Output Module (VOM), which precisely converts the measured current into a voltage output via a BNC connector. The DSSIU-1-V supports both 1 V and 10 V output options with its +/-15 V/1.2 A DC supply output generated from a universal mains input between 110 and 220 V<sub>AC</sub>. Main target applications include flux gate DCCTs, hall effect DCCTs, electric vehicle test benches, power measurement and power analysis, current calibration purposes as well as precision current sensing.	26.06.2025 15:30:00	Jun	news_2025-07-15_17.jpg	\images\news_2025-07-15_17.jpg	https://danisense.com/news/new-compact-1-channel-system-interface-unit/	danisense.com
"World's First 10 µF / 50 V_DC MLCC in 0805-inch Size for Automotive Applications"	Murata has announced the GCM21BE71H106KE02 multila...	12434	Product Release	"World's First 10 µF / 50 V<sub>DC</sub> MLCC in 0805-inch Size for Automotive Applications"	Murata has announced the GCM21BE71H106KE02 multilayer ceramic capacitor (MLCC) has entered mass production. The device is “the world's first 0805-inch size (2.0mm x 1.25 mm) MLCC to offer a capacitance of 10 µF with a 50 VDC rating and is specifically engineered for automotive applications”. Designed for 12 V automotive power lines, the GCM21BE71H106KE02 capacitor leverages Murata’s proprietary ceramic material and thinning technologies to help engineers to save PCB space and reduce the overall capacitor count. It offers roughly 2.1 times the capacitance of Murata’s previous 4.7 µF / 50 V<sub>DC</sub> product, despite sharing the same physical size. Furthermore, compared to the previous 10 µF / 50 V<sub>DC</sub> MLCC in the larger 1206-inch size (3.2 mm x 1.6 mm), the MLCC occupies approximately 53 % less space, providing substantial space savings for automotive applications.	26.06.2025 12:30:00	Jun	news_2025-07-01_14.png	\images\news_2025-07-01_14.png	https://www.murata.com/en-eu/news/capacitor/ceramiccapacitor/2025/0612	murata.com
Digital Controller for GaN Totem Pole PFC	Wise Integration release to production its first f...	12447	Product Release	Digital Controller for GaN Totem Pole PFC	Wise Integration release to production its first fully digital controller, WiseWare® 1.1 (WIW1101) based on the MCU 32 bits. This device enables high-frequency operation up to 2 MHz, unlocking new levels of power density, efficiency, and form factor in compact AC/DC power converters. Unlike legacy analog solutions, WiseWare 1.1 leverages the speed and switching capabilities of GaN through a proprietary digital control algorithm in a MCU 32 bits, that enables zero voltage switching (ZVS) across all power transistors. Designed specifically for totem pole power-factor correction (PFC) architectures in critical-conduction mode (CrCM), this controller allows engineers to reduce the size, weight, and thickness of magnetic components while maintaining >98 percent efficiency. It supports a power range from 100 W to 1.5 kW, making it suitable for a several applications requiring both compactness and high energy efficiency. Designed with flexibility in mind, WiseWare 1.1 works seamlessly with standard GaN across the full R<sub>DS(on)</sub> spectrum. The minimum standby power consumption is 18 mW.	26.06.2025 07:30:00	Jun	news_2025-07-15_9.jpg	\images\news_2025-07-15_9.jpg	https://wise-integration.com/wise-integration-launches-first-digital-controller-wiseware-1-1-for-gan-totem-pole-pfc-with-high-switching-frequency-up-to-2-mhz/	wise-integration.com
Isolated Gate Driver IC Optimized for High-Voltage GaN Devices	ROHM has developed an isolated gate driver IC – th...	12435	Product Release	Isolated Gate Driver IC Optimized for High-Voltage GaN Devices	ROHM has developed an isolated gate driver IC – the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions – contributing to greater miniaturization and efficiency in high-current applications such as motors and server power supplies. The BM6GD11BFJ-LB utilizes proprietary on-chip isolation technology to reduce parasitic capacitance, enabling operation up to 2 MHz. This maximizes the high-frequency switching capabilities of GaN devices. This contributes not only to greater energy efficiency and performance in applications but also reduces mounting area by minimizing the size of peripheral components. At the same time, CMTI (Common-Mode Transient Immunity – an indicator of noise tolerance in noise isolated gate driver ICs) has been increased to 150 V/ns – 1.5 times higher than conventional products – preventing malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65 ns, which is 33% less than conventional products. With a gate drive voltage range of 4.5 V to 6.0 V and an isolation voltage of 2500 V<sub>rms</sub>, the BM6GD11BFJ-LB is designed to fully support a wide range of high-voltage GaN devices, including ROHM's 650 V EcoGaN™ HEMT. The output-side current consumption is 0.5 mA (max). Typical application are industrial equipment like Power supplies for PV inverters, ESS (Energy Storage Systems), communication base stations, servers, and industrial motors as well as consumer devices like white goods, AC adapters (USB chargers), PCs, TVs, refrigerator and air conditioners.	25.06.2025 13:30:00	Jun	news_2025-07-01_15.jpg	\images\news_2025-07-01_15.jpg	https://www.rohm.com/products/power-management/gate-drivers/gan-gate-drivers/bm6gd11bfj-lb-product	rohm.com
Electroactive Polymers for Heating and Cooling	Research scientists at Fraunhofer IAP have develop...	12479	Industry News	Electroactive Polymers for Heating and Cooling	Research scientists at Fraunhofer IAP have developed electrocaloric polymer films with a very low thickness of only four micrometers and processed them into multilayer components. In the future, they will be used in various systems for heating and cooling. For example, in heat pumps for temperature control in vehicle interiors, battery modules, electronic components, control cabinets, or laser systems. Applications include electromechanical sensors and actuators for applications in soft robotics and automation, sound and vibration detectors, ultrasonic transducers, pyroelectric layers for infrared sensors, and electrocaloric materials for heating and cooling. Electrocaloric polymers react to changes in electrical voltage with changes in temperature: the sudden application of an electric field leads to a specific, sudden rise in temperature, which increases the greater the change in the electric field. This is due to polar structures in the material, which are forced into an orderly alignment by the electric field and release energy in the process. Conversely, they absorb energy again as soon as the electric field is switched off. The material cools down abruptly to the same extent. For the technical use of electrocaloric materials in heating and cooling systems, these processes must be repeated at high frequencies and controlled in such a way that heating and cooling take place in different environments. Only then can a heat pump with usable, permanently warm and cold areas be created. Several properties of the material are crucial for high electrocaloric performance, including a large change in electrical polarization, high dielectric strength, low thermal losses, and good mechanical stability.	25.06.2025 12:00:00	Jun	news_2025-08-01_7.jpg	\images\news_2025-08-01_7.jpg	https://www.iap.fraunhofer.de/en/press_releases/2025/electroactive-polymers-heating-cooling.html	iap.fraunhofer.de
Power Inductors in a Performance Version	The WE-XHMI Performance series extends Würth Elekt...	12433	Product Release	Power Inductors in a Performance Version	The WE-XHMI Performance series extends Würth Elektronik's family of power inductors with improved versions in sizes 1010, 1060, 6030, and 6060. The magnetically shielded flat-wire inductors support high saturation currents while reducing DC. The WE-XHMI Performance SMT inductors show the ability to withstand saturation currents of up to 114 A while also handling high transient current peaks. This makes them particularly suitable for use in DC/DC converters, point-of-load converters and high-current filters, as well as in industrial computers, mainboards and graphics cards. These latest improvements now enable Würth Elektronik to meet the growing demand for low-loss solutions at high switching frequencies and maximum power density, driven by GaN and SiC transistor technologies. The new generation of molded WE-XHMI flat-wire inductors is claimed to "outperform other products of the same size by offering the lowest R<sub>DC</sub> combined with low AC losses". Compared to the standard products in the series, the "Performance" models feature an extended inductance range, a higher operating temperature (-55 °C to +150 °C), up to 30 percent lower resistance, and up to 50 percent higher rated currents. Thanks to their significantly reduced DC losses compared to inductors of the same size, they enable more efficient operation with lower self-heating. Low DC losses at higher rated currents help raise the efficiency of switching regulators.	25.06.2025 11:30:00	Jun	news_2025-07-01_13.jpg	\images\news_2025-07-01_13.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=XHMI-Performance	we-online.com
Power Inductors in a Performance Version	The WE-XHMI Performance series extends Würth Elekt...	12450	Product Release	Power Inductors in a Performance Version	The WE-XHMI Performance series extends Würth Elektronik's family of power inductors with improved versions in sizes 1010, 1060, 6030, and 6060. The magnetically shielded flat-wire inductors support saturation currents of up to 114 A while reducing DC losses for even more efficient operation. They are suitable e. g. for use in DC/DC converters, point-of-load converters and high-current filters, as well as in industrial computers, mainboards and graphics cards. Compared to the standard products in the series, the "Performance" models feature an extended inductance range, a higher operating temperature (-55 °C to +150 °C), up to 30 percent lower resistance, and up to 50 percent higher rated currents at reduced DC losses compared to inductors of the same size.	25.06.2025 10:30:00	Jun	news_2025-07-15_12.jpg	\images\news_2025-07-15_12.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=XHMI-Performance	we-online.com
180 W GaN Buck Converter Evaluation Board for USB PD Applications	Efficient Power Conversion Corporation (EPC) intro...	12448	Product Release	180 W GaN Buck Converter Evaluation Board for USB PD Applications	Efficient Power Conversion Corporation (EPC) introduced the EPC91109, a high-performance evaluation board designed to demonstrate the benefits of eGaN® FETs in a compact, thermally efficient, two-phase synchronous buck converter. Targeting USB Power Delivery (USB-PD 3.1) applications up to 180 W, the EPC91109 is optimized for space- and power-constrained designs such as laptops, portable devices, and battery-powered systems. The EPC91109 combines four 50 V-rated EPC2057 GaN FETs with the Analog Devices LTC7890, a dual-phase buck controller, to deliver output voltages of 12 V, 16 V, or 20 V from an input range of 20 V to 36 V. In two-phase interleaved mode, it supports output currents up to 14.3 A - matching the full 180 W USB-PD power envelope at 12 V output from a 36 V source. The EPC91109 Evaluation Board: is configurable to operate in either two-phase or single phase, dual-output mode, operates with a low-profile inductor of 3 mm height and has a power stage measuring 24 mm x 24 mm. Offering configurable light-load modes and dead-time settings it does not require any heatsink or forced air cooling as the peak efficiency is beyond 98 % under standard operating conditions.	24.06.2025 08:30:00	Jun	news_2025-07-15_10.jpg	\images\news_2025-07-15_10.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3221/ultra-compact-high-efficiency-180-w-gan-buck-converter-evaluation-board-for-usb-pd-applications	epc-co.com
Collaboration to advance next-generation GaN Device	Silvaco Group announced a strategic R&D collaborat...	12440	Industry News	Collaboration to advance next-generation GaN Device	Silvaco Group announced a strategic R&D collaboration with Fraunhofer Institute for Silicon Technology (ISIT). The partnership aims to accelerate development of next-generation Gallium Nitride devices using Silvaco's Power Devices Solution to perform Design Technology Co-Optimization (DTCO). This collaboration aligns with Fraunhofer ISIT's role in the EU Chips Act initiative through its participation in the APECS pilot line. Silvaco is a provider of TCAD, EDA software, and SIP solutions that enable semiconductor design and digital twin modeling through AI software and automation. Fraunhofer ISIT's Power Electronics division is at the forefront of developing and manufacturing cutting-edge device prototypes for high-performance power electronic and sensor systems. Fraunhofer ISIT will leverage Silvaco's design tools - including the Victory TCAD™ platform, Utmost IV™, and SmartSpice™ - to perform Design Technology Co-Optimization (DTCO) for power and sensor device development. Silvaco DTCO platform will enable accelerated prototyping in Fraunhofer ISIT's post-CMOS process environment, which is set up to explore emerging processes for both GaN and MEMS technologies on 8-inch wafers. In addition, Silvaco's Victory Design of Experiments (DOE) solution will streamline development workflows and support rapid innovation during the evaluation of novel process modules and emerging device concepts. In addition to the active utilization of Silvaco's tools in R&D and industry customer projects, Fraunhofer ISIT will train students at local universities in the utilization of Silvaco's Victory TCAD platform to prepare the next generation of semiconductor device engineers.	24.06.2025 07:00:00	Jun	news_2025-07-15_2.jpg	\images\news_2025-07-15_2.jpg	https://investors.silvaco.com/news-releases/news-release-details/silvaco-and-fraunhofer-isit-collaborate-advance-next-generation	silvaco.com
Collaboration on Next-Generation Integrated Power Delivery Solution for AI and Cloud Platforms	Empower Semiconductor announced a collaboration wi...	12425	Industry News	Collaboration on Next-Generation Integrated Power Delivery Solution for AI and Cloud Platforms	Empower Semiconductor announced a collaboration with Marvell Technology to develop optimized integrated power solutions for Marvell® custom silicon platforms. These solutions are designed to accelerate the transformation of power delivery systems to smaller, faster, integrated power silicon chips tightly coupled with the processor. The joint solutions are part of Empower's broader mission to address the power delivery challenges of the kilowatt-chip era. By integrating power delivery with processors, Empower and Marvell enable hyperscalers and infrastructure providers to maximize their performance, efficiency, and return on investment (ROI) of artificial intelligence (AI) and cloud data centers. The collaboration leverages Empower's FinFast™ technology and vertical power delivery architecture to provide system designers with pre-validated, high-density power solutions that move voltage regulation from traditional board-level designs to silicon-integrated or near-chip solutions. By bringing power delivery closer to the processor, these solutions significantly reduce power transmission losses, improve efficiency, and support the increasing current demands of next-generation XPUs.	18.06.2025 09:00:00	Jun	news_2025-07-01_4.png	\images\news_2025-07-01_4.png	https://www.empowersemi.com/empower-and-marvell-announce-collaboration-on-next-generation-integrated-power-delivery-solution-for-ai-and-cloud-platforms/	empowersemi.com
The EU Energy Label for Mobile Devices	A new energy label for mobile devices is mandatory...	12427	Industry News	The EU Energy Label for Mobile Devices	A new energy label for mobile devices is mandatory in the EU starting June 20, 2025. This applies to all smartphones and tablets with Android or iPadOS operating systems, ushering in a new era of European product policy. For the first time, an EU-wide standardized label, which Fraunhofer IZM played a key role in developing, evaluates not only the energy efficiency of devices, but also their reliability, durability, and repairability. The European regulation's goal is to greatly increase the longevity of mobile devices. According to a survey conducted by the Fraunhofer Institute for Reliability and Microintegration IZM in 2022, factors other than energy consumption are also influencing users' decisions. The survey indicated that device longevity is a crucial consideration for users. The label is closely tied to the new ecodesign requirements. Batteries should be able to withstand at least 800 charging cycles while retaining 80% of their original capacity. Manufacturers must enter all products bearing the EU energy label in a European product database (EPREL). This database can be accessed via the QR code on the energy label. This allows for informed purchasing decisions that are based on sustainability criteria and align with the principles of a circular economy. The potential savings are considerable: The new requirements are expected to reduce the primary energy consumption required for producing, distributing, and using mobile devices by nearly 14 terawatt hours per year by 2030. This reduction is equivalent to approximately one-third of the previous energy consumption throughout the products' life cycle.	17.06.2025 11:00:00	Jun	news_2025-07-01_6.png	\images\news_2025-07-01_6.png	https://www.izm.fraunhofer.de/en/news_events/tech_news/the-eu-energy-label-for-mobile-devices.html	izm.fraunhofer.de
25 V MOSFET in DFN3.3x3.3 meets Power Demands in AI Servers	Alpha and Omega Semiconductor introduced its AONK4...	12430	Product Release	25 V MOSFET in DFN3.3x3.3 meets Power Demands in AI Servers	Alpha and Omega Semiconductor introduced its AONK40202 25V MOSFET in DFN3.3x3.3 Source-Down packaging technology. Designed for high power density in DC/DC applications, the device provides features that meet the requirements of AI servers and data center power distribution. In particular, its Source-Down packaging technology offers a larger source contact to the PCB, and its center gate pin layout allows easier routing on the PCB, so the gate driver connection can be minimized. The AONK40202 MOSFET's DFN3.3x3.3 Source-Down packaging technology with clip enables continuous current capabilities up to 319 A with a maximum junction temperature rated at 175 °C. This provides significant potential for system-level improvements, such as better thermal management, enabling higher power density and greater efficiency.	17.06.2025 08:30:00	Jun	news_2025-07-01_10.jpg	\images\news_2025-07-01_10.jpg	https://www.aosmd.com/news/alpha-and-omega-semiconductor-introduces-25v-mosfet-dfn33x33-source-down-packaging-meets-power	aosmd.com
1600 V IGBTs for energy-conscious Appliance Markets	STMicroelectronics' STGWA30IH160DF2 IGBT combines ...	12449	Product Release	1600 V IGBTs for energy-conscious Appliance Markets	STMicroelectronics' STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and a maximum junction temperature of 175°C with a current rating of 30 A in high-power applications, including induction heaters and cookers, microwave ovens, and rice cookers. Extending the STPOWER portfolio, this is the first 1600 V IGBT in ST's IH2-generation operating with a saturation voltage V<sub>CEsat</sub> of 1.77 V (typical, at rated current). The device, which is available in a TO-247 long lead package, can be used in single-switch quasi-resonant converters over a switching frequency range, from 16 kHz to 60 kHz. Featuring a positive V<sub>CE(sat)</sub> temperature coefficient with tight parameter distribution, the STGWA30IH160DF2 allows connecting multiple devices in parallel for current sharing in high-power applications.	16.06.2025 09:30:00	Jun	news_2025-07-15_11.jpg	\images\news_2025-07-15_11.jpg	https://community.st.com/t5/developer-news/advanced-1600v-igbts-for-cost-sensitive-energy-conscious/ba-p/812211	st.com
Launch of Energy Storage Resource Hub	Arrow Electronics has launched a dedicated online ...	12423	Industry News	Launch of Energy Storage Resource Hub	Arrow Electronics has launched a dedicated online hub offering extensive resources for those seeking to understand the future of energy storage systems. As the global shift towards renewable energy accelerates, battery energy storage systems (BESS) are becoming critical in revolutionising energy storage and management. BESS technology plays a vital role in integrating solar and wind power, enabling the electrification of vehicles, and providing reliable backup power, ultimately enhancing sustainability and resilience across various sectors. The energy storage systems resource page provides access to a range of valuable content, including a webinar on 'Optimising Energy Storage: The Role of Advanced BMS,' an e-book on BESS, essential design resources, insightful articles exploring key energy storage topics, such as photovoltaic integration and recordings of on-demand webinars, including 'High-Power SiC MOSFETs Designed to Last.' Arrow, in collaboration with eInfochips, is driving innovation in the BESS sector by offering leading-edge components, expert engineering support, and dependable supply chain solutions.	16.06.2025 07:00:00	Jun	news_2025-07-01_2.jpg	\images\news_2025-07-01_2.jpg	https://www.arrow.com/en/campaigns/energy-storage-systems-solutions	arrow.com
CWIEME Berlin Closes with Record Energy, Innovation and Collaboration	The event for coil winding, insulation and electri...	12445	Event News	CWIEME Berlin Closes with Record Energy, Innovation and Collaboration	The event for coil winding, insulation and electrical manufacturing brought together industry leaders, engineers, academics and future talent to shape the future of electrical manufacturing. Welcoming a visitor footfall of 12,500+, including representatives from Hitachi, Hyundai, LG Electronics, Logitech, NIDEC, Nike, Bosch, Rolls-Royce, Schaeffler, Schneider Electric, Siemens, Tesla, Toshiba, Toyota and more. The show's conference program featured more than 90 expert speakers, covering key themes such as automation, sustainability, digitalisation and supply chain transformation. From e-mobility breakthroughs to leadership insights, the event proved once again why CWIEME Berlin is the cornerstone of the global electrical engineering calendar. Visitors explored the buzzing Innovation Zone, which hosted well-attended Power Hour presentations from its exhibitors throughout the show, and expanded Academic Excellence Hub, and the launch of the Electric Avenue helped guide guests through five exhibition halls filled with the world's most forward-thinking companies.	12.06.2025 12:00:00	Jun	news_2025-07-15_7.jpg	\images\news_2025-07-15_7.jpg	https://berlin.cwiemeevents.com/articles/cwieme-berlin-closes-with-record-energy	berlin.cwiemeevents.com
eBook on High-Density Power Modules for 48 V	Vicor explains in their latest eBook how its power...	12436	Product Release	eBook on High-Density Power Modules for 48 V	Vicor explains in their latest eBook how its power solutions support customers that are constantly pushing the limits of what is possible. This exclusive read entitled ‘Changing what’s Possible’ delves into how power dense Vicor modules enable many world-changing innovations across various sectors, including electric vehicles, renewable energy and advanced computing, all of which are adopting 48 V architecture. The guide from Vicor outlines the essential role of high-density power modules in optimising performance in applications which test the limits of power electronics. Through a range of case studies that highlight daunting power challenges, the eBook explains how thermally-adept Vicor power modules in tandem with Vicor propriety technology and 48 V architectures are capable of exceeding what’s possible. The eBook provides fresh insight and knowledge on different power architectures through practical examples, encouraging the adoption of best practices in power system design in order to push the boundaries of what is possible. The eBook includes in-depth analysis as it explores the latest developments in high-density power electronics and their implications for various industries. Furthermore, it also shows the actual products used in the power delivery network to better understand how to design an individual PDN. This is complemented by practical applications because the eBook teaches about real-world applications and how cutting-edge power solutions are transforming industries.	11.06.2025 14:30:00	Jun	news_2025-07-01_16.jpg	\images\news_2025-07-01_16.jpg	https://www.vicorpower.com/resource-library/ebook/changing-whats-possible-pi-ebook	vicorpower.com
On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers	Wide bandgap semiconductors such as SiC, GaN, and ...	12412	Industry News	On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers	Wide bandgap semiconductors such as SiC, GaN, and diamond are critical materials for next-generation power electronics, optoelectronics, and quantum technologies. However, their performance is highly sensitive to internal stress, strain, and defects introduced during growth and processing. In this webinar, you can explore how Raman, Photoluminescence (PL), Time-Resolved Photoluminescence and Cathodoluminescence can be powerful, non-destructive tools for characterizing these properties with high spatial and spectral resolution. It is discussed how Raman spectroscopy can reveal information about crystal quality, phonon shifts due to strain, and temperature effects, while PL provides insight into electronic and optical properties, impurity levels, and defect states. Real-world case studies and application examples highlight how these techniques can be used to optimize material growth, improve device yield, and accelerate R&D.	11.06.2025 12:00:00	Jun	news_2025-06-15_7.png	\images\news_2025-06-15_7.png	https://angelbc.zoom.us/webinar/register/WN_d7KosM0sRgWBvrv1RQYXIg#/registration	horiba.com
Tab Terminal, High Voltage DC Switching Relay	FCL Components has released the FTR-E1J 20A, a tab...	12432	Product Release	Tab Terminal, High Voltage DC Switching Relay	FCL Components has released the FTR-E1J 20A, a tab terminal-type high voltage DC switching relay, based on its FTR-E1 series. It is screw mounted and does not use printed circuit boards. This relay delivers 20 A / 800 V<sub>DC</sub>, 10 A / 1,000 V<sub>DC</sub> higher voltage switching with no specific polarity requirements for the connection of load terminals, and low power consumption (0.9 W at coil rated voltage). It features non-polarized contacts, making it suitable for charge and discharge circuits using FCL Components' arc suppression technology to protect its contacts. The FTR-E1J 20A is well-suited for both fuel and electric vehicle, solar, machinery, and battery applications, including electric vehicle pre-charge (HEV, PHEV, FCV, EV), PTC heaters, quick charge stations, photovoltaic power generation systems, hybrid construction machinery, battery systems, and V2H systems. This high insulation design (between coil and contacts: 5,000 V<sub>DC</sub>, between open contacts: 2,500 V<sub>DC</sub>), plastic sealed relay is RoHS compliant and uses no hydrogen gas. It measures 28.3 x 43.6 x 36.1 mm³ (excluding protrusion) and weighs approximately 85 g.	10.06.2025 10:30:00	Jun	news_2025-07-01_12.jpg	\images\news_2025-07-01_12.jpg	https://www.fcl-components.com/en/resources/news/press-releases/2025/20250610eu.html	fcl-components.com
Cooperation on Power Semiconductors for HVDC Transmission Systems	Mitsubishi Electric Corporation announced that it ...	12426	Industry News	Cooperation on Power Semiconductors for HVDC Transmission Systems	Mitsubishi Electric Corporation announced that it has signed a memorandum of understanding (MOU) with GE Vernova, headquartered in Cambridge, Massachusetts, USA, to strengthen their cooperation on power semiconductors for high-voltage direct-current (HVDC) transmission systems. The agreement is a result of the "Japan-US focus group to enhance collaboration on energy security and supply chain," an initiative organized by Japan's Ministry of Economy, Trade and Industry (METI) and GE Vernova to promote increased corporate collaboration between the two countries. With the signing of this memorandum, Mitsubishi Electric will provide a stable and continuous supply of IGBT power semiconductors for GE Vernova's VSC HVDC transmission systems. Through strengthened technical and strategic cooperation with GE Vernova, Mitsubishi Electric aims to leverage the expertise and strengths of both companies to support the evolution of the power grid and meet the growing demand for electricity. Going forward, Mitsubishi Electric aims to further expand its HVDC transmission systems business by increasing production capacity to meet rapidly expanding market demand.	10.06.2025 10:00:00	Jun	news_2025-07-01_5.png	\images\news_2025-07-01_5.png	https://www.mitsubishielectric.com/en/pr/2025/0610-b/?category=&year=	mitsubishielectric.com
GaN Inverter Brings GaN Power to Medium-Voltage Motor Drives	Efficient Power Conversion Corporation (EPC) relea...	12431	Product Release	GaN Inverter Brings GaN Power to Medium-Voltage Motor Drives	Efficient Power Conversion Corporation (EPC) released the EPC9196, a high-performance 25 A<sub>RMS</sub>, 3-phase BLDC motor drive inverter reference design powered by the EPC2304 eGaN FET. The EPC9196 is specifically designed for medium-voltage (96 V – 150 V) battery-powered motor drive applications, including steering systems in automated guided vehicles (AGVs), traction motors in compact autonomous vehicles, and precision motor joints in robotics. The EPC9196 fills a gap in the motor drive reference design landscape. According to EPC "with no other available reference designs operating at this voltage and current combination, EPC offers system designers a compact, efficient, and ready-to-deploy solution that accelerates development and optimizes system performance in the lower end of the 25 – 400 A<sub>RMS</sub> application range". At the heart of the EPC9196 is the EPC2304, a 200 V-rated, 3.5 mΩ (typical) eGaN FET in a thermally enhanced QFN package. Chosen for its low R<sub>DS(on)</sub> and unmatched performance in compact form factors, the EPC2304 enables the EPC9196 to deliver up to 35 Apk (25 A<sub>RMS</sub>) phase current at switching frequencies up to 100 kHz. This performance translates to low switching losses, minimal dead time, and a smooth, low-noise motor drive profile even at high PWM speeds. Key features of the EPC9196 include an input voltage range from 30 V to 170 V, integrated gate drivers, housekeeping power, current and voltage sense, over-current protection, and thermal monitoring as well as compatibility with multiple motor drive controller platforms from Microchip, ST, TI, and Renesas. Furthermore, the EPC9196 is dv/dt control optimized for motor drive applications (<10 V/ns) and ready for sensorless or encoder-based control configurations.	10.06.2025 09:30:00	Jun	news_2025-07-01_11.jpg	\images\news_2025-07-01_11.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3219/high-efficiency-gan-inverter-brings-gan-power-to-medium-voltage-motor-drives	epc-co.com
Sales Office in Shanghai opened	Danisense has recently opened a sales office in Sh...	12424	Industry News	Sales Office in Shanghai opened	Danisense has recently opened a sales office in Shanghai, China to be closer to the Asian market and to be able to serve and support its growing Asian customer base locally. The office is being headed up by General Manager Siyu Yan, who benefits from more than 15 year years' experience in the electronics and Test & Measurement sector. On the picture (left to right) Henrik Elbæk, CEO of Danisense and Siyu Yan, General Manager of Danisense's Sales Office in Shanghai, shake hands to confirm and start working together.	10.06.2025 08:00:00	Jun	news_2025-07-01_3.jpg	\images\news_2025-07-01_3.jpg	https://danisense.com/	danisense.com
High-Voltage Battery Sensor combining Shunt and Hall Effect Technologies	LEM has launched a current sensing unit for batter...	12429	Product Release	High-Voltage Battery Sensor combining Shunt and Hall Effect Technologies	LEM has launched a current sensing unit for battery management in electric vehicles (EVs). For the first time on the market, LEM has put together shunt and open-loop Hall effect technologies in a single part, called Hybrid Supervising Unit (HSU), to meet the challenges of small footprint, low cost and highest safety level in EV battery management systems. For higher safety levels, system engineers typically use two separate devices, a shunt to measure 2000 A and a current sensor fully isolated for measurements to 2000 A. At the BMS level, the HSU enables system developers to reach the ASIL D safety level required for EVs. The shunt's resistance is very low at 25 µΩ, and the Hall part is galvanically isolated, with accuracy of 2% at 500 A and 5% at 2000 A. Signal communication lines are separated (shunt signal and analogue or digital bus for the Hall part), and there is an NTC (Negative Temperature Compensation) signal for shunt temperature compensation. The current measuring range is up to ±2000 A at 10 s for both parts within the operating temperature range of -40 °C to +125 °C. The HSU is a plug-and-play unit. LEM initially offers the HSU00 part, with HSU01 to follow in June. The two are suitable for the two most common BDU busbar sizes: 84 x 36 x 3 mm³ (HSU00) and 84 x 20 x 3 mm³ (HSU01).	10.06.2025 07:30:00	Jun	news_2025-07-01_9.jpg	\images\news_2025-07-01_9.jpg	https://www.lem.com/en/battery-management-system	lem.com
1200 V SiC Diodes: Manufacturing Collaboration between Indian and Taiwanese Companies	RIR Power Electronics announces the successful pro...	12411	Industry News	1200 V SiC Diodes: Manufacturing Collaboration between Indian and Taiwanese Companies	RIR Power Electronics announces the successful production expansion and shipment of 1200 V SiC diodes from Taiwan. This was achieved through a strategic collaboration with a contract fab at Pro Asia Semiconductor Corporation (PASC), Taiwan and by leveraging technology IP that RIR Power had acquired from Sicamore Semi, USA. The product portfolio includes 1200 V Schottky Barrier Diodes (SBDs) ranging from 2 A to 60 A, addressing the most common ratings used across multiple applications and markets globally. Besides serving existing domestic Indian and the USA customers, shipping from Taiwan also provides improved access to strategic high-growth markets for SiC devices in the South East Asian region. RIR Power's SiC technology and portfolio are the result of a comprehensive technology transfer agreement signed with Sicamore Semi in October 2024. The agreement granted RIR Power exclusive rights to manufacture, market and commercialize SiC diodes, MOSFETs and IGBTs using Sicamore's proven IP and process know-how. Originally developed for 4-inch wafers, the technology has been successfully adapted for 6-inch wafer production. The scale-up was achieved with technical support from Vortex Semi, USA and PASC. The 1200 V SiC diodes, produced at PASC's fabrication facility in Taiwan, have been shipped to India and validated to meet global industry standards. RIR Power has already secured purchase orders from key suppliers to the commercial, industrial and defence sectors. This achievement aligns with India's Make in India initiative, reinforcing the nation's semiconductor supply chain and reducing reliance on imports for critical defence technologies. RIR Power's new SiC semiconductor facility in Odisha, is set to further enhance India's indigenous manufacturing capabilities.	05.06.2025 11:00:00	Jun	news_2025-06-15_6.png	\images\news_2025-06-15_6.png	https://www.ruttonsha.com/news-update/rir-power-electronics-expands-manufacturing-of-1200v-silicon-carbide-sic-diodes-in-collaboration-with-pro-asia-semiconductor-corporation-taiwan	ruttonsha.com
Online Calibration Portal for brand agnostic Calibration Services for Current Transducers	Danisense has introduced its 'Online Calibration P...	12409	Industry News	Online Calibration Portal for brand agnostic Calibration Services for Current Transducers	Danisense has introduced its 'Online Calibration Portal' to offer brand agnostic calibration services for current transducers and make the whole process as smooth and easy as possible. Via the personal online portal, which is available on the company's website, customers can book their brand agnostic calibrations for current transducers to be performed in the ISO 17025 accredited Calibration Lab from Danisense, located at the company's Taastrup headquarters in Denmark. The 'Online Calibration Portal' provides customers with regular online and email updates during the calibration process, calibration reports, detailed order tracking as well as an online payment function, etc.	05.06.2025 09:00:00	Jun	news_2025-06-15_4.png	\images\news_2025-06-15_4.png	https://danisense.com/news/danisense-launches-online-calibration-portal/	danisense.com
Digital Multimeter Series	Rohde & Schwarz presents the R&S UDS digital multi...	12418	Product Release	Digital Multimeter Series	Rohde & Schwarz presents the R&S UDS digital multimeter series, which can display three measurements simultaneously and offer versatile measurement functions and various interfaces for remote control. Models are available with a digit resolution of 5 1/2 as well as 6 1/2, the latter providing a basic DC accuracy of 0.0075%. The R&S UDS series replaces the established R&S HMC8012 digital multimeter, offering more accuracy and an updated intuitive user interface. With voltage ranges extending up to 1000 V DC and 750 V AC and a current capacity of 10 A, these multimeters come with a 3.5" OVGA color display. For remote control, the new multimeters offer a variety of interfaces, including USB, IEEE-488 (GPIB) for SCPI-based commands, and LAN (Ethernet).	03.06.2025 11:30:00	Jun	news_2025-06-15_13.jpg	\images\news_2025-06-15_13.jpg	https://www.rohde-schwarz.com/uk/about/news-press/all-news/built-for-accuracy-designed-for-ease-introducing-the-new-r-s-uds-digital-multimeter-series-press-release-detailpage_229356-1564411.html?change_c=true	rohde-schwarz.com
APEC 2026: Call for Technical Sessions Digest Submissions	Texas, from March 22-26, 2026, continues the long-...	12408	Event News	APEC 2026: Call for Technical Sessions Digest Submissions	Texas, from March 22-26, 2026, continues the long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer. Interested authors wishing to present a paper must submit a digest for consideration by the deadline. To facilitate higher quality digest and final manuscript submissions, APEC 2026 offers significantly expanded submission windows for both the phases. Topics of interest are divided into fourteen tracks, each track with a diverse set of subtopics: AC/DC Converters, DC/DC Converters, DC/AC Inverters, Devices and Components, Magnetics, Power Electronics Integration and Manufacturing, Control, Modeling and Simulation, Motor Drives, Power Electronics for Utility Applications, Renewable Energy Systems, Wireless Power Transfer, Transportation Power Electronics, Power Electronics Applications. "APEC provides an ideal balance between academic and industrial research and is a meeting ground for these two areas, unlike any other power electronics conference," said Dhaval Dalal, APEC 2026 Program Chair. "APEC tops the list of the IEEE power electronics conferences for average paper citations - as of May 2025, 7.4 for APEC 2019 and 4.8 for APEC 2022." The Technical Sessions digest should explain the problem that will be addressed by the paper, its major results and how it is different from the closest existing literature. Technical Sessions papers presented at APEC must be original material and not have been previously presented or published.	03.06.2025 08:00:00	Jun	news_2025-06-15_3.png	\images\news_2025-06-15_3.png	https://apec-conf.org/speakers/ts-author-info/	apec-conf.org
Power Supplies for Communications, Industrial, and Defense Applications	P-DUKE's TBF500 family of AC/DC power supplies sup...	12428	Product Release	Power Supplies for Communications, Industrial, and Defense Applications	P-DUKE's TBF500 family of AC/DC power supplies support a universal input voltage range from 85 to 264 VAC and are available with output voltages of 12, 15, 24, 28, 48, and 54 VDC. All members of the family offer a low 0.6 W power consumption under no-load conditions (no minimum load is required) and support up to 500 W loads with up to 93% power conversion efficiency. With 3,000 VAC reinforced insulation, TBF500 devices are presented in the form of a sealed power brick containing active semiconductor components with an integrated thermally conductive aluminum base plate. In addition to a 3-year warranty, the TBF500 PSUs are RoHS compliant, REACH compliant, and IEC/UL/EN 62368-1 safety compliant. A typical deployment involves the use of additional components, including a metal oxide varistor (MOV) to act as a fuse, resistors capacitors, and inductors to meet electromagnetic compatibility (EMC) requirements, bulk capacitors for smoothing, and other components to provide output filtering.	01.06.2025 06:30:00	Jun	news_2025-07-01_8.png	\images\news_2025-07-01_8.png	https://www.pduke.com/news_detail5_176.htm	pduke.com
Radiation-hardened GaN Transistors	Infineon announced the first of a new family of ra...	12416	Product Release	Radiation-hardened GaN Transistors	Infineon announced the first of a new family of radiation hardened Gallium Nitride transistors, fabricated at Infineon's own foundry, based on its CoolGan™ technology. Designed to operate in harsh space environments, it is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794. These radiation hardened GaN HEMT devices are engineered for mission-critical applications required in on-orbit space vehicles, manned space exploration, and deep space probes. The first three product variations in this radiation-hardened GaN transistor line are 100 V / 52 A devices featuring an R<sub>DS(on)</sub> of 4 mΩ (typical) and total gate charge of 8.8 nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70 MeV.cm²/mg (Au ion). Two devices, which are not JANS certified, are screened to a Total Ionizing Dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794. Infineon emphasizes that it is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications.	29.05.2025 09:30:00	May	news_2025-06-15_11.jpg	\images\news_2025-06-15_11.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFPSS202505-111.html	infineon.com
Flyback Transformers	Sumida announces its CEP1311F Flyback Transformers...	12419	Product Release	Flyback Transformers	Sumida announces its CEP1311F Flyback Transformers, designed specifically for use with "no-opto" isolated flyback circuits, such as the Analog Devices LT8304-1 reference design. This isolated flyback transformer is suited for industrial, automotive, medical, and telecom applications. The CEP1311F (13324-T083 to13324-T087) transformers have single outputs, while the CEP1311F (13324-T196) provides dual isolated outputs. This dual-output CEP1311F (13324-T196) flyback transformer is optimized for LT8304-1 applications. It enables isolated, no-opto flyback conversion with 110-V outputs and 15-V input. Custom configurations are also available. The single-output CEP1311F (13324-T083 to 13324-T087) is available in five output voltages, ranging from 3.3 V to 400 V. The dimensions are 21 mm x 21 mm x 11.8 mm, and the operating temperature range is -40 °C to 125 °C. In addition, a 1500 V<sub>rms</sub> Hi-Pot rating provides electrical isolation for enhanced safety. The transformers also boast a Moisture Sensitivity Level (MSL) of 1 for unlimited floor life under standard environmental conditions.	28.05.2025 12:30:00	May	news_2025-06-15_14.jpg	\images\news_2025-06-15_14.jpg	https://products.sumida.com/ProductsInfo/QuickSearch/TypeInfo.php?filterType=1&filterText=CEP1311F	sumida.com
Shielded Power Inductors	Bourns introduced the SRP2512CL and SRP3212CL Seri...	12422	Product Release	Shielded Power Inductors	Bourns introduced the SRP2512CL and SRP3212CL Series Shielded Power Inductors that are claimed to feature "low AC Resistance and low DC Resistance, delivering reduced losses and high efficiency." The components were designed to meet the latest DDR5 memory technology specifications such as those in DDR5 Power Management Integrated Circuits (PMIC) and client DDR5 modules in desktop PCs, notebooks and tablets. The devices operate in the temperature range of -40 to +125 °C, and are available with inductance ratings of up to 1.5 µH in 3030 and 2520 package sizes.	27.05.2025 15:30:00	May	news_2025-06-15_17.jpg	\images\news_2025-06-15_17.jpg	https://www.bourns.com/news/press-releases/pr/2025/05/27/bourns-introduces-two-shielded-power-inductor-series-developed-for-ddr5-power-management-integrated-circuits	bourns.com
PCIM booth raises €10,000 for a worthy cause	Vincotech staged a charity benefit at this year's ...	12407	Industry News	PCIM booth raises €10,000 for a worthy cause	Vincotech staged a charity benefit at this year's PCIM Europe trade fair. The company and its partners pledged a donation for every visitor who competed in a virtual reality memory game, raising 10,000 € for a Plan International Germany project in Malawi called "Education Empowers Girls!" Vincotech has made a tradition of hosting engaging charity events at the fair. Activities such as wall climbing, Sudoku, and this latest VR memory challenge – a crowd favorite – attracted hundreds of enthusiastic fairgoers. This year's proceeds go to a Plan International Germany project aiming to improve access to education and outcomes for girls in Malawi's Lilongwe and Kasungu districts. Running from October 2022 to September 2026, the initiative goes to create inclusive, supportive learning environments where girls and boys can realize their full potential. In a statement Vincotech explains why it chose this charity project: "Empowering girls through education changes lives – and not just individuals'; it transforms entire families and communities for generations to come."	26.05.2025 07:00:00	May	news_2025-06-15_2.jpg	\images\news_2025-06-15_2.jpg	https://www.vincotech.com/news/company-news/article/vincotech-pcim-booth-raises-eur10000-for-a-worthy-cause.html	vincotech.com
AI-powered Design Assistant	Frenetic Electronics announced Frenetic AI, an AI-...	12397	Product Release	AI-powered Design Assistant	Frenetic Electronics announced Frenetic AI, an AI-powered assistant that helps engineers design power converters. The company has also announced significant upgrades to Frenetic Magnetic Simulator, its cloud platform that allows engineers to simulate and design high-frequency inductors and transformers up to 95 % accuracy. Frenetic AI designs the converter topology based on user constraints and automatically generates electrical schematics and simulation files (LTspice, PLECS). It also suggests suitable off-the-shelf or custom magnetics. Currently available as a free basic version which has been beta-site tested, Frenetic AI will shortly be additionally offered as a PRO version is coming soon, which will include premium features such as planar transformer design, off-the-shelf component suggestions and additional design insights. Frenetic AI can integrate with Frenetic Magnetic Simulator for advanced magnetic component design, but can also be used as a standalone module. Frenetic Magnetic Simulator has also been upgraded. The original platform delivers advanced modeling of copper and core losses, the superposition of AC signals with high-frequency components and material and core selection based on the application's needs. Latest add-ons include a machine-learning-based model for calculating foil winding losses. The recent version of Frenetic Magnetic Simulator has been trained on 5,000 FEM simulations across many designs, and delivers 12 % median relative error, with millisecond response times.	22.05.2025 07:30:00	May	news_2025-06-01_12.png	\images\news_2025-06-01_12.png	https://www.frenetic.ai/	frenetic.ai
IPCEI ME/CT CONNECT 2025	IPCEI ME/CT CONNECT 2025, being held on June 16 in...	12392	Event News	IPCEI ME/CT CONNECT 2025	IPCEI ME/CT CONNECT 2025, being held on June 16 in Grenoble, France, is a key gathering for project partners, national authorities, and Member States to highlight achievements, share updates, and build new collaborations across Europe's strategic microelectronics and communication landscape. Held in conjunction with the IPCEI on Microelectronics and Communication Technologies, this event aims to strengthen Europe's leadership in secure, sustainable, and sovereign semiconductor-based technologies.	21.05.2025 12:00:00	May	news_2025-06-01_7.png	\images\news_2025-06-01_7.png	https://ipcei-me-ct.eu/news/join-the-ipcei-me-ct-connect-2025/	ipcei-me-ct.eu
12 kW Power Supply Unit Reference Design for AI Data Centers	Navitas Semiconductor has announced a 12 kW power ...	12400	Product Release	12 kW Power Supply Unit Reference Design for AI Data Centers	Navitas Semiconductor has announced a 12 kW power supply unit (PSU) "designed for production" reference design for hyperscale AI data centers with high-power rack densities of 120 kW achieving 97.8 % Efficiency. The 12 kW PSU complies with ORv3 specifications and OCP guidelines. It utilizes Gen-3 Fast SiC MOSFETs, an "IntelliWeave" digital platform, and high-power GaNSafe ICs configured in 3-phase interleaved TP-PFC and FB-LLC topologies. The 3-Phase interleaved totem-pole power factor correction (TP-PFC) is powered by Gen-3 Fast SiC MOSFETs with trench-assisted planar technology. IntelliWeave™ digital control provides a hybrid control strategy of both Critical Conduction Mode and Continuous Conduction Mode, for light-load to full-load conditions, ensuring maximum efficiency while maintaining a simplistic design with low component count. This results in a "30% reduction in power losses compared to existing Continuous Conduction Mode solutions". The 3-phase interleaved full-bridge LLC topology is enabled by 4<sup>th</sup> generation high-power GaNSafe™ ICs, integrating control, drive, sensing, and critical protection features that allow unprecedented reliability and robustness. GaNSafe is claimed to be "the world's safest GaN with short-circuit protection" (350 ns maximum latency), 2 kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with four pins, allowing the package to be treated like a discrete GaN FET, requiring no VCC pin. Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLL and TOLT packages are available with a range of R<sub>DS(ON)typ.</sub> from 18 to 70 mΩ.	21.05.2025 10:30:00	May	news_2025-06-01_15.jpg	\images\news_2025-06-01_15.jpg	https://navitassemi.com/navitas-launches-industry-leading-12kw-gan-sic-platform-achieving-97-8-efficiency-for-hyperscale-ai-data-centers/	navitassemi.com
Semiconductor Collaboration on Next Generation 800 V HVDC Architecture	Navitas Semiconductor announced a collaboration wi...	12410	Industry News	Semiconductor Collaboration on Next Generation 800 V HVDC Architecture	Navitas Semiconductor announced a collaboration with NVIDIA on their next-generation 800 V HVDC architecture to support 'Kyber' rack-scale systems powering their GPUs, such as Rubin Ultra, enabled by GaNFast™ and GeneSiC™ power technologies. NVIDIA's next generation of 800 V DC architecture aims to establish high-efficiency, scalable power delivery for next-generation AI workloads, to ensure greater reliability, efficiency, and reduced infrastructure complexity. Today's existing data center architecture uses traditional 54 V in-rack power distribution and is limited to a few hundred kW. As power increases above 200 kW, this architecture runs into physical limits due to power density, copper requirements, and reduced system efficiency. Modern AI data centers require gigawatts (GW) of power for the increasing demand for AI computation. Nvidia's approach is to directly convert the 13.8 kV AC grid power to 800 V HVDC at the data center perimeter using solid state transformers (SST) and industrial-grade rectifiers, eliminating several AC/DC and DC/DC conversion steps, maximizing efficiency and reliability. Due to the higher voltage level of 800 V HVDC, the thickness of copper wires can be reduced by up to 45%. The 800 V HVDC directly powers the IT racks (eliminating the need for additional AC/DC converters) and is converted by DC/DC converters to lower voltages, which will drive GPUs. NVIDIA's 800V HVDC architecture is expected to improve end-to-end power efficiency up to 5%, reduce maintenance costs by 70% (due to fewer PSU failures), and lower cooling costs by directly connecting HVDC to the IT and compute racks.	21.05.2025 10:00:00	May	news_2025-06-15_5.png	\images\news_2025-06-15_5.png	https://navitassemi.com/navitas-developing-next-generation-800-v-hvdc-architecture-with-nvidia/	navitassemi.com
LTspice Models for ESD Products	Würth Elektronik, in cooperation with the Institut...	12389	Industry News	LTspice Models for ESD Products	Würth Elektronik, in cooperation with the Institute of Electronics (IFE) at Graz University of Technology, now offers an LTspice model for its TVS diodes and ESD suppressors for ESD protection, based on real measurement data using TLP (Transmission Line Pulsing). This enables the actual behavior of the components to be measured under electrostatic discharge (ESD) conditions. The ready-to-use simulation files facilitate integration into SPICE-based analyses and help shorten design cycles and time-to-market. Conventional models of components for ESD protection typically rely on simplified approximations. The new models developed by Würth Elektronik and the IFE at Graz University of Technology, based on measurement data, however, reflect the actual transient properties, including snapback behavior. The snapback effect allows the voltage to be clamped to a lower level after a transient overvoltage than is possible with standard PN diodes. This is a key aspect of ESD protection, as it reduces both the overvoltage and the resulting thermal stress on sensitive electronic components, so the ability to simulate it is a critical improvement to the development process. LTspice models for realistic modelling of real component behavior during ESD events for products from the WE-TVS and WE-VE product series are now available to download.	21.05.2025 09:00:00	May	news_2025-06-01_4.jpg	\images\news_2025-06-01_4.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=ESD-Diodemodel	we-online.com
650 V SiC MOSFETs	Toshiba Electronics Europe announces volume shipme...	12404	Product Release	650 V SiC MOSFETs	Toshiba Electronics Europe announces volume shipments of its 3rd generation, 650 V silicon carbide MOSFETs in the compact DFN8x8 package for industrial equipment, the TW031V65C, TW054V65C, TW092V65C, and TW123V65C. An important characteristic of Toshiba's next-generation process is the consistently low R<sub>DS(on)</sub> temperature coefficient of the devices. The R<sub>DS(on)</sub> x gate-drain charge (Q<sub>gd</sub>) figure of merit (FoM), therefore, enables engineers to enhance the power density and efficiency of numerous high-voltage applications, including switched-mode power supplies (SMPSs), electric vehicle (EV) charging stations, uninterruptible power supplies (UPS), and photovoltaic (PV) inverters. The surface-mount DFN8x8 package reduces volume by more than 90 % compared to existing lead-inserted packages, such as TO-247 and TO-247-4L(X). Furthermore, the multi-pin device allows a Kelvin connection of its signal-source pin for the gate drive.	20.05.2025 14:30:00	May	news_2025-06-01_19.jpg	\images\news_2025-06-01_19.jpg	https://toshiba.semicon-storage.com/eu/company/news/2025/05/mosfet-20250520-1.html	toshiba.semicon-storage.com
APEC 2026: Call for Papers	APEC 2026 will take place March 22 – 26, 2026 at t...	12388	Event News	APEC 2026: Call for Papers	APEC 2026 will take place March 22 – 26, 2026 at the Henry B. Gonzalez Convention Center in San Antonio, Texas/USA, and now the call for Technical Session Papers has started. APEC 2026 offers an expanded window for digest and final manuscript submissions, making it easier to participate. According to the organizer, "submitting your work is a strategic investment in your professional future - contribute to the evolution of power electronics, engage with a dynamic and influential community, and make a lasting impact". According to the submission requirements engineers have to review the list of topics when planning their digest in order to ensure that the work is original, not previously published, and include evidence of completed experimental work. The principal criteria in selecting digests will be the usefulness of the work to the practicing power electronic professional. Reviewers value evidence of completed experimental work. Authors should obtain any necessary company and governmental clearance prior to submission of digests. Once Accepted, a detailed letter will be sent to all accepted submissions. The deadline for digest submissions is August 15, 2025, while final manuscripts and author registrations are due December 8, 2025.	20.05.2025 08:00:00	May	news_2025-06-01_3.png	\images\news_2025-06-01_3.png	https://apec-conf.org/speakers/ts-author-info/	apec-conf.org
IEDM 2025 Paper Submission Deadline in July	The 71st annual IEEE International Electron Device...	12390	Event News	IEDM 2025 Paper Submission Deadline in July	The 71st annual IEEE International Electron Devices Meeting (IEDM) is scheduled for December 6 - 10, 2025 in San Francisco, with on-demand access to recorded content after the event. Paper submission deadline is July 10, 2025. Authors are asked to submit four-page papers electronically in IEEE Xplore-compatible PDF format and the accepted papers will be published as-is in the proceedings. Late-news papers covering the most recent, most noteworthy developments also will be accepted, with a submission deadline of August 18, 2025. IEDM 2025 will feature special Focus Sessions on "Efficient AI solutions", "Beyond Silicon: The Invisible Revolution in Thin-Film Transistors", "From P-bits to Qubits" and "Silicon Photonics for Energy Efficient AI Computing". Papers written by students as the lead author based on their own work will be considered for the Best Student Paper Award. Papers must be identified as student papers at time of submission, and the presentation must be given by the student to be eligible. The award is chosen based on both paper and presentation, and winner is announced and presented after IEDM.	19.05.2025 10:00:00	May	news_2025-06-01_5.jpg	\images\news_2025-06-01_5.jpg	https://www.ieee-iedm.org/	ieee-iedm.org
CIPS 2026: Call for Papers	CIPS, the "International Conference on Integrated ...	12386	Event News	CIPS 2026: Call for Papers	CIPS, the "International Conference on Integrated Power Electronics Systems" will take place March 10-12, 2026 in Dresden/Germany, and the organizers describe the basic framework as follows: In the next decades, power electronic system development will be driven by energy saving systems, intelligent energy management, power quality, system miniaturisation and high reliability. Monolithic and hybrid system integration will comprise advanced device concepts including wide bandgap devices, new packaging technologies and the overall integration of actuators/drives (mechatronic integration). Consequently, CIPS is focused on the three main aspects: Assembly and interconnect technology for power electronic devices and converters. The second aspect is the integration of hybrid systems and mechatronic systems with high power density, and the third aspect is the systems' and components' operational behaviour, reliability and availability. Basic technologies for integrated power electronic systems as well as upcoming important applications will be presented in interdisciplinary invited papers. Experts from industry, research institutes and universities wishing to present results of their recent research are cordially invited to submit a paper by September 29, 2025. Applications are wide spread over areas such as power supplies and drives to feed all kinds of loads like consumer electronics, industrial equipment, data centres etc. Applications are e. g. from the grid or to feed electrical energy from solar or wind generators to the grid but also in the transportation sector like railway, automotive and aircraft. The organizers explicitly encourage to "submit your contribution even if you can not find the appropriate topic for your contribution. All interesting contributions are welcome!"	19.05.2025 06:00:00	May	news_2025-06-01_1.png	\images\news_2025-06-01_1.png	https://www.cips.eu/en	cips.eu
Technology Center in the "Indian Silicon Valley"	Following the establishment of a sales office in C...	12387	Industry News	Technology Center in the "Indian Silicon Valley"	Following the establishment of a sales office in Chennai in 2005 and the opening of a production plant in 2022, Harting has now inaugurated a technology center focusing on research and development in India. The aim is to meet the demand for advanced connector solutions in the region in a customer-oriented manner and to meet the growing requirements in the Asian market. Now, a 7,000 square metre technology center has been officially opened in Bangalore, popularly known as the "Silicon Valley of India". The goal: to offer talented individuals from the technology sector a platform to drive forward the development of connectivity solutions for various industries such as manufacturing, transport and telecommunications. Harting will also offer training and development opportunities to aspiring engineers and technology specialists. In addition to its headquarters in Chennai, Harting India has further sales offices in Bangalore, Pune and Noida.	16.05.2025 07:00:00	May	news_2025-06-01_2.jpg	\images\news_2025-06-01_2.jpg	https://www.harting.com/en-DE/news/harting-opens-new-technology-center-in-the-indian-silicon-valley	harting.com
Coupled Inductor for High-Performance Applications	Würth Elektronik introduces its WE-HCMD (High Curr...	12405	Product Release	Coupled Inductor for High-Performance Applications	Würth Elektronik introduces its WE-HCMD (High Current Multiphase Dual) high-current inductor, specially developed for use in TLVR (Trans-Inductor Voltage Regulator) topologies. This coil with MnZn core is characterized by its high permeability and very low RDC values allowing a high power density and efficiency. When designing power supplies for processors today, developers are confronted with increasingly high and significantly varying load transients – for example, in FPGAs used in AI applications. The innovation in TLVRs in this field calls for a new generation of components that achieve consistent efficiency even at high temperatures. The WE-HCMD family from Würth Elektronik offers coupled inductors with a coupling factor of up to 0.98 and an inductance range from 70 nH to 200 nH. The saturation current goes up to 190 A at a rated current of 78 A. The internal resistance is 0.125 mΩ. The inductor is designed for operating temperatures up to 125 °C. The family of SMT-mountable high-current inductors for TLVR applications includes four versions in a 0910 package and six in a 1111 package.	15.05.2025 15:30:00	May	news_2025-06-01_20.jpg	\images\news_2025-06-01_20.jpg	https://www.we-online.com/en/news-center/press?instance_ID=5506&d=WE-HCMD	we-online.com
Early Bird Registration for ECCE Europe 2025 is Now Open	Early Bird Registration for ECCE Europe 2025, bein...	12395	Event News	Early Bird Registration for ECCE Europe 2025 is Now Open	Early Bird Registration for ECCE Europe 2025, being held in Birmingham/UK from August 31 to September 4, is now open. If you're working in power electronics or energy conversion, this is your chance to connect with industry experts, researchers, and thought leaders shaping the field. Learn from renowned experts through keynote addresses, insightful tutorials, and engaging special sessions, while networking and building valuable connections with colleagues from around the world.	15.05.2025 14:00:00	May	news_2025-06-01_10.png	\images\news_2025-06-01_10.png	https://www.ecce-europe.org/2025/registration/rates-and-registration/	ecce-europe.org
Wide Bandgap Power-electronic devices – From characterization to EMC testing	Rohde & Schwarz and dataTec invite you to xperienc...	12393	Event News	Wide Bandgap Power-electronic devices – From characterization to EMC testing	Rohde & Schwarz and dataTec invite you to xperience live demonstrations of how to analyze wide bandgap semiconductors using an oscilloscope and gain valuable insights into selecting the right oscilloscopes and probes. They will also demonstrate how EMC measurements and debugging can be efficiently performed with the oscilloscope, spectrum analyzer, and SCN. This seminar in Reutlingen/Germany on July 1st is aimed at users working with wide-bandgap semiconductors who are planning to purchase an oscilloscope and want to deepen their practical knowledge.	15.05.2025 13:00:00	May	news_2025-06-01_8.png	\images\news_2025-06-01_8.png	https://www.datatec.eu/de/en/rs-seminar	datatec.eu
GaN Half-Bridge Drivers	STMicroelectronics' high-voltage half-bridge gate ...	12420	Product Release	GaN Half-Bridge Drivers	STMicroelectronics' high-voltage half-bridge gate drivers for GaN applications dubbed STDRIVEG610 and STDRIVEG611 give designers two options to manage GaN devices in power conversion and motion applications for greater efficiency, power density and ruggedness in consumer and industrial applications. The STDRIVEG610 addresses applications requiring a fast 300 ns start-up time which is an important parameter for converter topologies like LLC or ACF ensuring accurate controlled turn-off intervals in burst mode. The STDRIVEG611 is tailored for hard switching in motion-control applications with additional protection features like high-side UVLO and smart shut down overcurrent protection. Both devices are suitable for hard-switching and soft-switching topologies with built-in interlocking to prevent cross conduction. The STDRIVEG610 elevates the performance of power adapters, chargers, and power-factor correction (PFC) circuits. The STDRIVEG611 saves space as well as boosting efficiency and reliability in drives for home appliances, pumps and compressors, industrial servo drives, and factory automation. Both devices integrate a high-side bootstrap diode as well as 6 V high-side and low-side linear regulators with a propagation delay matched to within 10 ns. Each driver has a separate sink and source path, with 2.4 A / 1.2 Ω sink and 1.0 A / 3.7 Ω source parameters. The integrated UVLO protection safeguards both the lower and upper 600 V GaN power switches.	14.05.2025 13:30:00	May	news_2025-06-15_15.jpg	\images\news_2025-06-15_15.jpg	https://community.st.com/t5/developer-news/latest-gan-half-bridge-drivers-for-power-conversion-and-motion/ba-p/799812	st.com
Series of Gate Drive Transformers	ITG Electronics has introduced a series of gate dr...	12396	Product Release	Series of Gate Drive Transformers	ITG Electronics has introduced a series of gate drive transformers comprising a range of products for various needs. The company's T201213 Series of Gate Drive Transformers spans lower-current items for general applications – such as a 200 V direct current version – to products offering up to 450 V<sub>DC</sub> for higher-voltage applications. Gate drive transformers are specialized pulse transformers used to deliver high-power, fast-switching signals to the gates of power translators like IGBTs and MOSFETs, while also providing galvanic isolation. Essentially acting as barriers between power translators and controlling drive circuits, gate drive transformers are essential to applications such as power converters and motor drives for efficient and consistent switching. The T201213 Series activates or deactivates switching devices, and provides floating supply and level shifting for switching signals. The series is designed for frequencies from 20 – 300 kHz, and each gate drive transformer in the portfolio meets medical safety isolation requirements.	14.05.2025 06:30:00	May	news_2025-06-01_11.png	\images\news_2025-06-01_11.png	https://itg-electronics.com/en/series/779	itg-electronics.com
EMC Components: Multilayer Chip Beads for 8 A	TDK Corporation has expanded its MPZ1608-PH series...	12402	Product Release	EMC Components: Multilayer Chip Beads for 8 A	TDK Corporation has expanded its MPZ1608-PH series of large-current multilayer chip beads for automotive and commercial power supply lines (1.6 x 0.8 x 0.6 mm³ – L x W x H). These 1608-size chip beads for power supply lines achieve a rated current of 8 A. Chip beads are used as noise suppression components in power and signal circuits. In a circuit with a current of 8 A or more, usually two or more chip beads must be used in parallel. This has the disadvantage that the current is not evenly distributed between the ferrite beads. The MPZ1608-PH series of products halves the component footprint in comparison with circuits using two conventional 1608-sized chip beads. Moreover, the components with a specified operating temperature of up to +125 °C are designed to be used in high-temperature environments like automotive and industrial equipment applications.	13.05.2025 12:30:00	May	news_2025-06-01_17.jpg	\images\news_2025-06-01_17.jpg	https://www.tdk.com/en/news_center/press/20250513_01.html	tdk.com
Semiconductor Partnership with Indian Government	Renesas has started a partnership with the Ministr...	12391	Industry News	Semiconductor Partnership with Indian Government	Renesas has started a partnership with the Ministry of Electronics & Information Technology (MeitY), Government of India, to support local startups and academic institutions in the field of VLSI and embedded semiconductor systems. Renesas also celebrated the expansion of its offices in Bengaluru and Noida to accommodate its growing R&D teams, with inauguration ceremonies held in May 2025. India is a key market for Renesas, offering significant growth potential and access to a highly skilled talent pool. Renesas intends to generate over 10 percent of its global revenue from the Indian market by 2030. Recent collaborations include the OSAT factory project with CG Power and Stars Microelectronics in Gujarat and the MOU with IIT Hyderabad. Renesas is also expanding its operations in India, with plans to increase its headcount to 1,000 by the end of 2025.	13.05.2025 11:00:00	May	news_2025-06-01_6.JPG	\images\news_2025-06-01_6.JPG	https://www.renesas.com/en/about/newsroom/renesas-partners-indian-government-drive-innovation-through-startups-and-industry-academia	renesas.com
SMD Fuse with 1500 A Interrupting Rating	Littelfuse launched the Nano²<sup>®</sup>...	12417	Product Release	SMD Fuse with 1500 A Interrupting Rating	Littelfuse launched the Nano²<sup>®</sup> 415 SMD Series Fuse, the first surface-mount fuse from Littelfuse with a 1500 A interrupting rating at 277 V. Designed to provide true buffering for 250 V applications with unpredictable voltage fluctuations, the 415 Series offers fault current protection in a compact SMD package, making it ideal for space-constrained applications. The Nano² 415 SMD Series is well-suited for a range of applications, including consumer electronics like power adapters, chargers, and power supplies, industrial systems like inverters, converters, and instrumentation, automotive like EV charging stations, home chargers, and lighting, appliances/white goods like washers, dryers, and refrigerators as well as home automation like automated garage doors and smart home systems.	13.05.2025 10:30:00	May	news_2025-06-15_12.png	\images\news_2025-06-15_12.png	https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-introduces-industry-first-nano2-415-smd-fuse-with-1500a-interrupting-rating-at-277v	littelfuse.com
Multiphase Power Controller	Alpha and Omega Semiconductor (AOS) announced its ...	12414	Product Release	Multiphase Power Controller	Alpha and Omega Semiconductor (AOS) announced its AOZ98252QI 2-output, 8-phase controller with 2.5 mA quiescent power. Featuring AMD SVI3 high-speed and SMBus digital interfaces, the AOZ98252QI is engineered as a key component in a complete system power solution with AOS' DrMOS products for graphics and desktop systems. The AOZ98252QI digital controller provides two output rails in flexible 8+0 to 4+4 GFX/SOC and Vcore/SOC output rails. Using the A²TM (Advanced Transient Modulator) feature, designers can achieve fast response times and adequate current balance for transient and DC loads. The device is shipped in a QFN 6x6-52L package.	13.05.2025 07:30:00	May	news_2025-06-15_9.jpg	\images\news_2025-06-15_9.jpg	https://www.aosmd.com/news/alpha-and-omega-semiconductor-introduces-amd-svi3-multiphase-controller-low-quiescent-power	aosmd.com
Collaboration to support Battery Energy Storage System Platform	Arrow Electronics, in collaboration with Prime Bat...	12406	Industry News	Collaboration to support Battery Energy Storage System Platform	Arrow Electronics, in collaboration with Prime Batteries and NXP Semiconductors, is launching a next-generation Battery Energy Storage System (BESS) platform. Prime Batteries developed this solution with support from Arrow and NXP to advance energy industry and energy-saving technologies, addressing the increasing global demand for greater efficiency. By leveraging their combined strengths, the companies aim to establish new benchmarks in energy-saving technology and make a substantial impact across industries. According to Arrow the solution complies with the latest European safety regulations and "achieves unprecedented levels of energy storage capacity, making it ideal for a variety of BESS applications". The platform's versatility allows it to cater to different customer needs, with adjustable voltage and current parameters. It supports high voltages up to 1500 V, in-line with current market trends for high-power equipment, and meets rigorous safety standards for critical applications, including ISO 26262, with the potential for ASIL D certification, if necessary. The system features multiple protection layers and continuous, independent cell monitoring. Designed with scalability and upgradability in mind, the BESS can meet the changing requirements of customers. Its low maintenance needs and optimized operating conditions extend its lifespan, thereby reducing the total cost of ownership. In this context NXP's 1500 V Battery Energy Storage System provides a modular and scalable reference design for utility, commercial, industrial and residential high-voltage applications.	13.05.2025 06:00:00	May	news_2025-06-15_1.jpg	\images\news_2025-06-15_1.jpg	https://news.fiveyearsout.com/news-releases/news-details/2025/Arrow-Electronics-and-NXP-Semiconductors-Collaborate-to-Support-Prime-Batteries-Advanced-Battery-Energy-Storage-System-Platform/default.aspx	arrow.com
Collaboration on Power Conversion Systems for Electric Vehicles	Infineon Technologies and Visteon announced the co...	12375	Industry News	Collaboration on Power Conversion Systems for Electric Vehicles	Infineon Technologies and Visteon announced the companies have signed a Memorandum of Understanding (MOU) to advance the development of next-generation electric vehicle powertrains. In this joint effort, Infineon and Visteon will collaborate and integrate power conversion devices based on Infineon semiconductors, with particular emphasis on wideband gap device technologies, which provide significant advantages in power conversion applications compared to silicon-based semiconductors. These devices include greater power density, efficiency and thermal performance, which contribute to improved efficiency and reduced system costs for next-generation power conversion modules for the automotive sector. Future Visteon EV powertrain applications incorporating Infineon CoolGaN™ (Gallium Nitride) and CoolSiC™ (Silicon Carbide) devices may include battery junction boxes, DC-DC converters and on-board chargers. The resulting powertrain systems will conform to the highest efficiency, robustness and reliability. "Working with Infineon allows us to integrate cutting-edge semiconductor technologies that are essential in improving power conversion efficiency and overall system capability of next generation electric vehicles," said Dr. Tao Wang, Head of the Electrification Product Line of Visteon Corporation. "This collaboration will advance technologies that accelerate the transition to a more sustainable and efficient mobility ecosystem."	09.05.2025 11:00:00	May	news_2025-05-15_6.jpg	\images\news_2025-05-15_6.jpg	https://www.visteon.com/investors/investor-news/news-details/2025/Infineon-and-Visteon-Collaborate-on-Advanced-Power-Conversion-Systems-for-Next-Generation-Electric-Vehicles-2025-5Dbe3Pylmd/default.aspx	visteon.com
German Government issues final Funding Approval for new Smart Power Fab in Dresden	Infineon Technologies has received final approval ...	12373	Industry News	German Government issues final Funding Approval for new Smart Power Fab in Dresden	Infineon Technologies has received final approval for the funding of its new plant in Dresden (Smart Power Fab) from the German Federal Ministry for Economic Affairs. Infineon is expanding the site in order to meet customer demand for example for renewable energies, efficient data centers and electromobility. Infineon will invest five billion euros of its own money, creating as many as 1,000 new jobs. This figure does not include additional jobs which will be generated in the investment's ecosystem: Experts expect a positive job effect of 1:6 (Source: ZVEI-Studie). In addition, Infineon is also investing in Dresden through its participation in the joint venture "European Semiconductor Manufacturing Company (ESMC) GmbH". Infineon's Smart Power Fab not only helps strengthen European supply chains in the microelectronics sector, it also further solidifies the position of Dresden and Silicon Saxony as Europe's largest semiconductor hub. The European Commission approved the funding by the German federal government. The Smart Power Fab is being supported by both the European Chips Act and the IPCEI ME/CT innovation program ("Important Project of Common European Interest on Microelectronics and Communication Technologies"). Overall funding for the site from these sources totals approximately one billion euros. Construction of the Smart Power Fab, currently one of Germany's largest building projects, is proceeding as planned, with the building shell currently nearing completion. Infineon held a topping-out ceremony together with all those involved in construction activities in early April this year. Production is to begin in 2026.	08.05.2025 09:00:00	May	news_2025-05-15_4.jpg	\images\news_2025-05-15_4.jpg	https://www.infineon.com/cms/en/about-infineon/press/press-releases/2025/INFXX202505-100.html	infineon.com
Test Generator for up to 2 kA	The Microtest Group introduced the M2 DS5 Quasar, ...	12398	Product Release	Test Generator for up to 2 kA	The Microtest Group introduced the M2 DS5 Quasar, "the smallest 2 kA low inductance dynamic switch test generator, for the test of all types of products on one platform". The tester is suited for high-volume semiconductor production. The M2 DS5 Quasar is designed to test power chips, and the latest WBG (Wide-bandgap) devices made from Silicon Carbide and Gallium Nitride, materials commonly found in consumer power supplies, electric vehicles including trains and battery electric hybrid, industrial motors, HVAC systems and many other applications in the green energy, automotive, power markets, as well as rad-hard (radiation-hardened) devices for space and defence. The tester was developed by the UK subsidiary ipTEST. It is eight times more efficient in overcurrent protection, with a typical response time of under 300 ns. The parasitic inductance has also been reduced by 85 % to 30 nH.	08.05.2025 08:30:00	May	news_2025-06-01_13.png	\images\news_2025-06-01_13.png	https://www.microtest.net/microelectronics-microtest-group-launches-a-one-platform-test-generator-suitable-for-rad-hard-devices/	microtest.net
Gallium: From Mining towards the Fab	Indium Corporation and Rio Tinto have successfully...	12394	Industry News	Gallium: From Mining towards the Fab	Indium Corporation and Rio Tinto have successfully extracted gallium from feed sourced at Rio Tinto's Vaudreuil alumina refinery in Saguenay, Quebec/Canada. This collaboration is a step in building a more robust global supply chain for gallium. A strategic North American supply will accelerate the development of the project towards commercialization of gallium-based technologies. Indium Corporation designed and developed this gallium extraction process in the United States at its research and development facility in Rome, New York state. Indium Corporation works towards establishing a 3.5-ton demonstration plant which would be located in Saguenay, Quebec, which might then eventually complemented by a commercial-scale capacity of 40 tons annually, addressing an estimated five to 10 percent of global gallium supply.	07.05.2025 15:00:00	May	news_2025-06-01_9.jpg	\images\news_2025-06-01_9.jpg	https://www.indium.com/blog/indium-corporation-and-rio-tinto-announce-groundbreaking-milestone-in-gallium-extraction-partnership/	indium.com
"The world's lowest Temperature 65-70 W USB-C Modules for installed Applications"	Pulsive released of a series of 65 W-70 W USB-C mo...	12384	Product Release	"The world's lowest Temperature 65-70 W USB-C Modules for installed Applications"	Pulsive released of a series of 65 W-70 W USB-C modules. Aimed at installed applications such as wall sockets, desks, and furniture, these fully assembled modules achieve "the world's lowest operating temperature of just 32 °C above ambient with an industry leading efficiency of 97.34 %". USB-C charging in wall sockets, desks, and furniture typically offer power levels of 15-30 W and often struggle to handle multiple devices and/or fast charging. Limitations on physical size and natural airflow cause higher power solutions at 45 W-65 W to reach temperature levels in excess of 80 °C above ambient causing the power supply to either reduce the power to 15 W, or in many cases, cut off altogether. Pulsiv's fully assembled USB-C modules have solved all the challenges relating to heat, size and safety, making it "the only suitable solution for installed applications". It combines Pulsiv OSMIUM optimized PFC technology with an industry standard QR flyback to safely deliver 65 W or 70 W (MacBook compatible). Available in a compact cube or flat module form factor, this GaN-optimised design can operate continuously for more than 8 hours at 100 % load and never exceed 32 °C above ambient. Furthermore, due to its switching method, there is zero inrush current – eliminating the problems caused by power outages where multiple USB-C wall sockets have been installed in a single location. The dimensions of the module, which is switched at 125 kHz, are 36 mm x 36 mm x 40 mm (cube) or 55 mm x 37 mm x 25 mm (flat).	06.05.2025 14:30:00	May	news_2025-05-15_15.jpg	\images\news_2025-05-15_15.jpg	https://www.pulsiv.com/	pulsiv.com
GaN-based 2.5 kW Totem Pole PFC Case Study	Cambridge GaN Devices (CGD) announced that Inventc...	12383	Product Release	GaN-based 2.5 kW Totem Pole PFC Case Study	Cambridge GaN Devices (CGD) announced that Inventchip has successfully demo'd a 2.5 kW GaN-based CCM totem-pole PFC reference design using CGD's ICeGaN® gallium nitride ICs. A key feature is ease-of use. ICeGaN ICs integrate interface circuitry and protection on the same GaN die as the HEMT. Therefore, any standard driver IC can be used. The Inventchip IVCC1104 totem pole PFC controller IC does not require any programming. It offers AC zero-crossing control and robustness against AC disturbance. Inventchip had an existing 2.5 kW TPPFC reference design based on its controller and gate drivers using SiC MOSFETs in TO-247 packages. To evaluate the performance of GaN instead, Inventchip designed a TO-247 adapter board using CGD's P2 25 mΩ ICeGaN ICs and the ICeGaN design works without any modification of their circuits. Soon, EV inverter drives of over 100 kW are expected to transition to GaN too.	06.05.2025 13:30:00	May	news_2025-05-15_14.JPG	\images\news_2025-05-15_14.JPG	https://www.camgandevices.com/en/p/2.5kw-totem-pole-pfc-case-study-demos-icegan-ease-of-use-and-robustness-at-higher-power	camgandevices.com
1700 V Switcher IC for 800 V BEVs	Power Integrations announced five new reference de...	12403	Product Release	1700 V Switcher IC for 800 V BEVs	Power Integrations announced five new reference designs targeting 800 V automotive applications based on the company's 1700 V InnoSwitch™3-AQ flyback switcher ICs. Spanning power levels from 16 W to 120 W, the designs leverage both wound and low-profile planar transformers and target automotive applications such as DC/DC bus conversion, inverter emergency power, battery management and power supplies for auxiliary systems. The designs feature Power Integrations' wide-creepage InSOP™-28G package, which supports 1000 V<sub>DC</sub> on the primary side while providing appropriate creepage and clearance between pins in pollution degree 2 environments. Power consumption is less than 15 mW at no-load. The ICs also incorporate synchronous rectification and a valley switching, discontinuous/continuous conduction mode (DCM/CCM) flyback controller capable of delivering greater than 91 % efficiency. The company provides three reference designs, which are all isolated flyback converters based on the 1700 V-rated CV/CC InnoSwitch3-AQ switcher ICs. The three reference designs kits (RDKs) and two design example reports (DERs) are RDK-994Q (35 W ultra-low-profile traction inverter gate-drive or emergency power supply with 40-1000 V<sub>DC</sub> input and 24 V output), RDK-1039Q (18 W power supply with planar transformer for traction inverter gate driver or emergency power supply), RDK-1054Q (120 W power supply with planar transformer, designed to shrink or eliminate heavy, bulky 12 V batteries), DER-1030Q (20 W four-output power supply) and DER-1045Q (16 W four-output power supply).	06.05.2025 13:30:00	May	news_2025-06-01_18.jpg	\images\news_2025-06-01_18.jpg	https://investors.power.com/news/news-details/2025/Power-Integrations-1700-V-Switcher-IC-Delivers-Reliability-and-Space-Saving-Benefits-in-800-V-BEVs/default.aspx	power.com
1200 V SiC MOSFET with Top-Side Cooling and Isolated Thermal Path	SemiQ has announced the expansion of its Gen3 SiC ...	12382	Product Release	1200 V SiC MOSFET with Top-Side Cooling and Isolated Thermal Path	SemiQ has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series. The four-strong series of Gen3 MOSFETs delivers continuous drain currents of between 27 and 101 A and pulsed drain current from 70 to 350 A, with device resistances R<sub>DS(on)</sub> ranging from 80 to 16 mΩ, respectively. All devices are operational to 175 °C and have been tested to voltages greater than 1400 V, undergoing wafer-level burn-in testing (WLBI) and UIL avalanche testing up to 800 mJ (R<sub>DS(on)</sub> = 16 mΩ, 160 mJ for the 80 mΩ device). The devices can be used in parallel and implement top-side cooling as well as an isolated thermal path with a ceramic isolated back paddle. The package includes a driver source kelvin pin for gate driving as well as a gate pin, 5 source pins and a drain tab. The TSPAK MOSFETs offer a lower capacitance, reduced switching losses, longer clearance distance and higher overall system efficiency. SemiQ is targeting the devices at a range of industrial and EV applications, including solar inverters and energy storage, induction heating and welding, EV charging stations and on-board chargers, motor drives, high-voltage DC/DC converters and UPS/switch mode power supplies. All devices in the series are housed in a 18.6 x 14.0 x 3.5 mm³ TSPAK package, have a zero gate voltage drain current of 0.1 µA, a -10/10 nA gate-source leakage current and a 3.5 V gate threshold voltage (cited characteristics measured at 25 °C). The series' cycle times range from 49 ns (80 mΩ MOSFET) to 114 ns (16 mΩ), and the devices have total switching energy of between 153 µJ (80 mΩ MOSFET) and 1565 µJ (16 mΩ).	06.05.2025 12:30:00	May	news_2025-05-15_13.jpg	\images\news_2025-05-15_13.jpg	https://semiq.com/	semiq.com
40 V GaN Power Transistor targets Low-Voltage Silicon Strongholds	Efficient Power Conversion (EPC) announces the ava...	12381	Product Release	40 V GaN Power Transistor targets Low-Voltage Silicon Strongholds	Efficient Power Conversion (EPC) announces the availability of the EPC2366, a 40 V, 0.8 m&ohm; device designed to displace legacy low-voltage silicon MOSFETs in demanding applications such as high-performance DC/DC converters and synchronous rectifiers. With an R<sub>DS(on)</sub> x Q<sub>G</sub> figure of merit (10 m&ohm;·nC), zero reverse recovery, and its thermal performance, the EPC2366 delivers higher efficiency, faster switching, and greater power density than a comparable silicon-based solution. The device is integrated in a 3.3 mm x 2.6 mm PQFN package. The EPC2366 enables higher frequency operation and reduced system size for high density 48 V converters in AI servers and datacom, high frequency synchronous rectifiers, and 24 V battery powered motor drives.	06.05.2025 11:30:00	May	news_2025-05-15_12.jpg	\images\news_2025-05-15_12.jpg	https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3213/new-40-v-gan-power-transistor-from-epc-targets-low-voltage-silicon-strongholds	epc-co.com
Enhanced Thermal Performance Package Technology	WeEn Semiconductors has introduced SiC MOSFETs and...	12401	Product Release	Enhanced Thermal Performance Package Technology	WeEn Semiconductors has introduced SiC MOSFETs and Schottky Barrier Diodes (SBDs) in thermally efficient TSPAK packages. These packages will enable engineers to improve efficiency, reduce form factors, extend reliability and lower EMI across a variety of high-power applications. Providing effective heat dissipation from a thermal pad on the surface of the SiC device rather than via a PCB substrate, the company's top-side cooling TSPAK technologies can reduce J-A (junction-to-ambient) thermal resistance by up to 16 % compared to conventional devices. As a result, the packages help to simplify thermal management design, lower losses and increase power density. EMI reduction derives from the fact that the circulating current that creates the magnetic field is no longer blocked by the thermal vias necessary in conventional bottom-side cooling designs and can return to the source directly, minimizing magnetic interference. WeEn's TSPAK SiC technologies are suited to on-board chargers and high-voltage-to-low-voltage DC/DC converters in electric vehicles, automotive HVAC compressors, vehicle charging stations, photovoltaic renewable energy systems and power supplies for computing and telecom servers. TSPAK MOSFETs offer voltage ratings from 650 V to 1700 V and on resistance ratings from 20 to 150 mΩ. TSPAK SBDs are available with voltages from 650 V to 1200 V and current ratings of 10 A to 40 A.	06.05.2025 11:30:00	May	news_2025-06-01_16.jpg	\images\news_2025-06-01_16.jpg	https://www.ween-semi.com/en	ween-semi.com
Self-Biasing GaN Flyback Converter	Texas Instruments now offers a 65 W dual-port USB ...	12380	Product Release	Self-Biasing GaN Flyback Converter	Texas Instruments now offers a 65 W dual-port USB PD charger with self-biasing GaN flyback: The UCG28826 is claimed to be "the industry's first self-biasing GaN flyback converter". Designed for next-generation fast-charging applications, the UCG28826 converter delivers 65 W across 90 V<sub>AC</sub> to 264 V<sub>AC</sub> in this reference design, enabling engineers to meet strict efficiency standards, minimize standby power consumption and increase power density.	06.05.2025 10:30:00	May	news_2025-05-15_11.jpg	\images\news_2025-05-15_11.jpg	https://www.ti.com/about-ti/newsroom/news-releases/2025/ti-advances-power-density-and-efficiency-at-pcim-2025.html	ti.com
Power Switch Architecture for 10 MW and more	Menlo Microsystems has announced a scalable power ...	12379	Product Release	Power Switch Architecture for 10 MW and more	Menlo Microsystems has announced a scalable power switching architecture that enables its Ideal Switch® to be deployed in advanced power distribution and control systems to 10 MW and beyond. The demonstration system, which was shown at PCIM, is based on the MM9200, a 300 V, 10 A MEMS switch. It utilizes Menlo's Ideal Switch technology to provide an ultra-low on-resistance, metal-on-metal contact to eliminate wasted power. The MM9200 is a high-power SPST micro-electromechanical relay that is smaller, more efficient and has higher performance than equivalent solid-state relay (SSR) and electro-mechanical relay (EMR) alternatives. Arrays of MM9200 switches are configured for microsecond speed protection in 1000 V / 125 A modules. Four modules are combined into hot-swapable systems, and multiple systems are deployed in parallel to scale to accommodate higher power requirements. Unlike other solutions, the negligible power dissipation of the Ideal Switch removes the need for design compromises to accommodate heat management while simultaneously enabling power management and control systems to be constructed in a fraction of the space.	06.05.2025 09:30:00	May	news_2025-05-15_10.jpg	\images\news_2025-05-15_10.jpg	https://menlomicro.com/	menlomicro.com
SiC Superjunction Technology	Infineon Technologies has introduced a trench-base...	12399	Product Release	SiC Superjunction Technology	Infineon Technologies has introduced a trench-based SiC superjunction (TSJ) technology concept. This expansion will encompass a diverse range of package types, including discretes, molded and frame-based modules, as well as bare dies – for a broad spectrum of applications, targeting both the automotive and industrial sectors. The first products based on the new technology will be 1200 V in Infineon ID-PAK for automotive traction inverters and combine the advantages of trench technology and superjunction design. This scalable package platform supports power levels of up to 800 kW, enabling system flexibility. Key benefits of the technology include increased power density, achieved through an up to 40 percent improvement in R<sub>DS(on)</sub>* A, allowing for more compact designs within a given power class. Additionally, the 1200 V SiC trench-superjunction concept in ID-PAK enables up to 25 percent higher current capability in main inverters without compromising short-circuit capability. As an early customer, Hyundai Motor Company development teams will use the trench-superjunction technology in electrical vehicle drivetrains.	06.05.2025 09:30:00	May	news_2025-06-01_14.jpg	\images\news_2025-06-01_14.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFGIP202505-097.html	infineon.com
General-Purpose Power Supplies Series	TDK has introduced the TDK-Lambda brand GUS350 ser...	12413	Product Release	General-Purpose Power Supplies Series	TDK has introduced the TDK-Lambda brand GUS350 series of compact, single output general-purpose power supplies. The models are rated at 350 W with 12, 24, 36 and 48 V outputs. The GUS350 is convection-cooled and is available with output voltage adjustment function, remote on-off, and DIN-rail mounting bracket options. The GUS350 series provides an alternative source of power for manufacturers who require a higher grade of construction. The GUS350 models measure 101.6 x 41 x 127 mm³ (W x H x D) and have an operating temperature from -20 to +70 °C, with a three-year warranty. Efficiencies are up to 95.5%. Safety certifications include IEC/EN/UL/CSA62368-1 (compliant to IEC61010-1) as well as CE and UKCA marking for the Low Voltage, EMC and RoHS Directives. The units also comply with EN 55011-B and EN 55032-B conducted and radiated emissions standards and meet EN 61000-3-2 harmonics and IEC 61000-4 immunity standards. The GUS350 series meets IEC 62477-1 (OVC III) and has input-to-output isolation of 2,000 V<sub>DC</sub>, input-to-ground 3,000 V<sub>DC</sub>, and output-to-ground 500 V<sub>DC</sub>. Main applications are light industrial, automation, ATE test systems, LED lighting and broadcast.	06.05.2025 06:30:00	May	news_2025-06-15_8.jpg	\images\news_2025-06-15_8.jpg	https://www.emea.lambda.tdk.com/uk/news/article/20847	lambda.tdk.com
Joint Development of Traction SiC Inverters for E-Mobility	Cissoid and EDAG Group have started a strategic pa...	12370	Industry News	Joint Development of Traction SiC Inverters for E-Mobility	Cissoid and EDAG Group have started a strategic partnership aimed at accelerating the development of next-generation Silicon Carbide traction inverters for electric mobility applications. This collaboration brings together Cissoid's expertise in SiC power semiconductor modules and control solutions with EDAG's engineering know-how in the design, integration, and validation of electric powertrains. By combining their complementary strengths, the two companies aim to offer e-mobility OEMs and equipment suppliers "unmatched technical support and complete solutions for the efficient, reliable, and functionally safe development of SiC-based traction inverters". Special emphasis will be set to "comprehensive engineering services covering inverter system design, thermal management, mechanical integration, functional safety and EMC compliance" in order to enable "accelerated time-to-market through access to ready-to-implement, proven hardware and software solutions". All this is planned to be with "end-to-end technical support, from concept design to prototyping and vehicle integration".	06.05.2025 06:00:00	May	news_2025-05-15_1.jpg	\images\news_2025-05-15_1.jpg	https://www.cissoid.com/news/cissoid-edag-group-join-forces-to-support-the-development-of-sic-inverters-32	cissoid.com
JFET Technology for smarter and faster Solid-State Power Distribution	To enable the next generation of solid-state power...	12378	Product Release	JFET Technology for smarter and faster Solid-State Power Distribution	To enable the next generation of solid-state power distribution systems, Infineon introduced its CoolSiC™ JFET product family. These devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them well-suited for solid-state protection and distribution. With robust short-circuit capability, thermal stability in linear mode, and overvoltage control, CoolSiC JFETs can be used in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches. The first generation of CoolSiC JFETs features an R<sub>DS(ON)</sub> starting at 1.5 mΩ (750 V <sub>BDss</sub>) and 2.3 mΩ (1200 V <sub>BDss</sub>), significantly reducing conduction losses. The bulk-channel optimized SiC JFET offers high robustness under short-circuit and avalanche failure conditions. Housed in a Q-DPAK top-side cooled package, the devices support paralleling and scalable current handling, enabling high-power systems with several layout and integration options. Their predictable switching behavior under thermal stress, overload and fault conditions increases long-term reliability in continuous operation. To meet the thermal and mechanical challenges of harsh application environments, CoolSiC JFETs leverage Infineon's.XT interconnection technology with diffusion soldering. This improves transient thermal impedance and robustness under pulsed and cyclic loads typical of industrial power systems. Tested and qualified under real-world operating conditions of solid-state power switches and based on the industry-standard Q-DPAK package, the devices enable quick and seamless design integration in both industrial and automotive applications.	05.05.2025 08:30:00	May	news_2025-05-15_9.jpg	\images\news_2025-05-15_9.jpg	https://www.infineon.com/cms/en/about-infineon/press/market-news/2025/INFGIP202505-096.html	infineon.com
Inverter Control Modules achieve ISO26262 ASIL-C Ready Certification	Cissoid announced that its CxT-ICM3S series of Inv...	12415	Product Release	Inverter Control Modules achieve ISO26262 ASIL-C Ready Certification	Cissoid announced that its CxT-ICM3S series of Inverter Control Modules (ICMs) have been successfully certified by SGS-TÜV Saar for functional safety, achieving ISO26262 ASIL-C Ready status. This certification underscores Cissoid's commitment to delivering unique, functionally safe and highly customizable solutions that bridge the gap between discrete hardware components and off-the-shelf inverters, enabling optimized power electronics design for electric vehicles and industrial applications. These ICMs are pre-qualified, functionally safe solution that combines the efficiency of off-the-shelf systems with the customizability of discrete hardware components. This best-of-both-worlds approach enables manufacturers to tailor their inverter designs to specific voltage, power, and motor control requirements - accelerating development while ensuring safety and performance. They offer hardware and software flexibility to adapt to specific motor, voltage, and power requirements. For example, the CXT-ICM3SA Series of 3-Phase SiC ICMs provides field-proven inverter control technology with customizable hardware interfaces allowing developers to fine-tune their inverters to maximize efficiency and reliability while ensuring compliance with strict safety standards.	05.05.2025 08:30:00	May	news_2025-06-15_10.jpg	\images\news_2025-06-15_10.jpg	https://www.cissoid.com/news/cissoids-inverter-control-modules-achieve-iso26262-asil-c-ready-certification-33	cissoid.com
Automotive-qualified 1200 V SiC MOSFETs in D²PAK-7 Packaging	Nexperia announced a range of efficient and robust...	12377	Product Release	Automotive-qualified 1200 V SiC MOSFETs in D²PAK-7 Packaging	Nexperia announced a range of efficient and robust automotive-qualified silicon carbide MOSFETs with R<sub>DS(on)</sub> values of 30, 40 and 60 mΩ. These devices (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q) were previously offered in industrial grade and have now been awarded AEC-Q101 certification. This makes them suitable for automotive applications like onboard chargers (OBC) and traction inverters in electric vehicles (EV) as well as for DC/DC converters, heating ventilation and air-conditioning systems (HVAC). These switches are housed in the increasingly popular surface mounted D²PAK-7 package, which is more suitable for automated assembly operations than through-hole devices. Concentrating on the nominal R<sub>DS(on)</sub> value neglects the fact that it can increase by more than 100 % as device operating temperatures rise, resulting in considerable rise of conduction losses. The temperature stability is even more critical when SMD package technologies are used compared to through-hole technology since devices are cooled through the PCB. Nexperia identified this as a limiting factor in the performance of many currently available SiC devices and focused the temperature stability of its SiC MOSFETs, with the nominal value of R<sub>DS(on)</sub> increasing by 38 % over an operating temperature range from 25 °C to 175 °C. This feature enables engineers to address higher output power in their applications achieved with a higher nominal 25 °C rated R<sub>DS(on)</sub> without sacrificing performance. Nexperia is planning to release automotive-qualified versions of its 17 mΩ and 80 mΩ R<sub>DS(on)</sub> SiC MOSFETs in 2025.	05.05.2025 07:30:00	May	news_2025-05-15_8.jpg	\images\news_2025-05-15_8.jpg	https://www.nexperia.com/about/news-events/press-releases/nexperia-launches-industry-leading-automotive-qualified-1200-v-silicon-carbide-mosfets-in-d2pak-7-packaging	nexperia.com
Proof of Concept for integrating Current Sensor into Power Module	Asahi Kasei Microdevices (AKM) and Silicon Austria...	12371	Industry News	Proof of Concept for integrating Current Sensor into Power Module	Asahi Kasei Microdevices (AKM) and Silicon Austria Labs (SAL) have successfully completed a joint proof of concept for integrating a current sensor into a power module to be used in automotive applications such as traction inverters and DC/DC converters. This technology enables energy efficiency, as well as compact and lightweight design for ultra-high current applications using next-generation SiC power devices. AKM is developing the EZ232L, a linear Hall IC for coreless current sensors. With its resolution and accuracy, this technology is said to enhance the efficiency of traction inverters that require operation over a wide current range. AKM collaborated with the Austrian research center SAL to conduct a joint technical verification, using EZ232L to develop a power module that integrates a current sensor in order to address the limitations of conventional magnetic core-based current sensing.	02.05.2025 07:00:00	May	news_2025-05-15_2.jpg	\images\news_2025-05-15_2.jpg	https://www.akm.com/global/en/about-us/news/2025/20250502-sal-powermodule/	akm.com
AC/DC Power Supplies delivering 20 W	In new energy applications, AC/DC power supplies i...	12421	Product Release	AC/DC Power Supplies delivering 20 W	In new energy applications, AC/DC power supplies increasingly must operate over nominal supply values from 100 V<sub>AC</sub> to 277 V<sub>AC</sub>. The recently launched RAC20NE-K/277 from Recom matches this with 20 W available at optional 12, 24, or 36 V<sub>DC</sub> outputs. Encapsulated versions are available with constant voltage or constant current limiting characteristics and a constant voltage open frame type with 12 or 24 V<sub>DC</sub> output. The RAC20NE-K/277 series allows reliable operation at full load to 60 °C ambient, and to 85 °C with derating. The parts are Class II insulated, OVC III rated to 3000 m altitude (OVC II/5000m) and meet EN 55032 'Class B' EMC requirements with a floating or grounded output. Standby and no-load power dissipation meet Eco-design requirements. The RAC20NE-K/277 board-mount, encapsulated parts are sized 52.5 mm x 27.6 mm x 23.0 mm while the open frame parts with Molex connections measure 80.0 mm x 23.8 mm x 22.5 mm.	01.05.2025 14:30:00	May	news_2025-06-15_16.jpg	\images\news_2025-06-15_16.jpg	https://recom-power.com/en/company/newsroom/rec-n-versatile-ac!sdc-power-supplies-deliver-20w-in-small-form-factor-406.html?3	recom-power.com

Bodo's News

Large-size Ferrite Cores with different Shapes

Company Location in South Africa added

Professorship to Accelerate Wide Bandgap Semiconductor Research

Two-Component Thermal Gap Filler and CIP Material

Partnership on Silicon Carbide Solutions for Power Management

150 V and 200 V MOSFETs “with industry-leading Figures of Merit”

30 Years of Openair-Plasma Technology

TVS Diodes cut Clamping Voltage

1 W Current Sense Chip Resistor Series

Jennifer Lloyd Announced Chief Executive Officer

dataTec Innovation Day

47 µF Multilayer Ceramic Capacitor in 0402-inch Size

Semi-Shielded Power Inductors

Level 3 SPICE Models featuring enhanced Simulation Speed

1200 V SiC Schottky Diodes

GaN-Based Motor Drive Reference Design for Humanoid Robots

Compact MOSFET for Fast Charging Applications

Avnet announces Gilles Beltran as new President

Supervisory Board appoints Alexander Gorski Chief Operations Officer

ESD Protection Diodes for 48 V EV Communications Networks

Steve Sanghi to Continue as CEO and President

Acquisition to expand T&M Portfolio for Power Electronics

Series of DC Energy Meters for Fast and Megawatt EV Chargers

DC Meters for High-Power and Megawatt Charging

Joint 200 mm GaN Production planned

GaN FETs for High-Density Power Conversion

Power Management IC Textbook

"MLCCs with the Industry's highest Capacitance at 100 V for Commercial Applications in the 1608 Case Size"

Off-the-Shelf Radiation-Hardened 15 W DC/DC Power Converter for Space Applications

Power Supply Unit for Flux Gate Technology Current Transducers

"World's First 10 µF / 50 VDC MLCC in 0805-inch Size for Automotive Applications"

Digital Controller for GaN Totem Pole PFC

Isolated Gate Driver IC Optimized for High-Voltage GaN Devices

Electroactive Polymers for Heating and Cooling

Power Inductors in a Performance Version

Power Inductors in a Performance Version

180 W GaN Buck Converter Evaluation Board for USB PD Applications

Collaboration to advance next-generation GaN Device

Collaboration on Next-Generation Integrated Power Delivery Solution for AI and Cloud Platforms

The EU Energy Label for Mobile Devices

25 V MOSFET in DFN3.3x3.3 meets Power Demands in AI Servers

1600 V IGBTs for energy-conscious Appliance Markets

Launch of Energy Storage Resource Hub

CWIEME Berlin Closes with Record Energy, Innovation and Collaboration

eBook on High-Density Power Modules for 48 V

On-Demand Webinar: Spectroscopic Characterization of Yield-killing Defects in Wide Bandgap Semiconductor Wafers

Tab Terminal, High Voltage DC Switching Relay

Cooperation on Power Semiconductors for HVDC Transmission Systems

GaN Inverter Brings GaN Power to Medium-Voltage Motor Drives

Sales Office in Shanghai opened

High-Voltage Battery Sensor combining Shunt and Hall Effect Technologies

1200 V SiC Diodes: Manufacturing Collaboration between Indian and Taiwanese Companies

Online Calibration Portal for brand agnostic Calibration Services for Current Transducers

Digital Multimeter Series

APEC 2026: Call for Technical Sessions Digest Submissions

Power Supplies for Communications, Industrial, and Defense Applications

Radiation-hardened GaN Transistors

Flyback Transformers

Shielded Power Inductors

PCIM booth raises €10,000 for a worthy cause

AI-powered Design Assistant

IPCEI ME/CT CONNECT 2025

12 kW Power Supply Unit Reference Design for AI Data Centers

Semiconductor Collaboration on Next Generation 800 V HVDC Architecture

LTspice Models for ESD Products

650 V SiC MOSFETs

APEC 2026: Call for Papers

IEDM 2025 Paper Submission Deadline in July

CIPS 2026: Call for Papers

Technology Center in the "Indian Silicon Valley"

Coupled Inductor for High-Performance Applications

Early Bird Registration for ECCE Europe 2025 is Now Open

Wide Bandgap Power-electronic devices – From characterization to EMC testing

GaN Half-Bridge Drivers

Series of Gate Drive Transformers

EMC Components: Multilayer Chip Beads for 8 A

Semiconductor Partnership with Indian Government

SMD Fuse with 1500 A Interrupting Rating

Multiphase Power Controller

"World's First 10 µF / 50 V_DC MLCC in 0805-inch Size for Automotive Applications"