Bodo's News

Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

 

Additional Manufacturing Capacity for wBMS Semiconductors
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Learn more:
analog.com
  • Industry News
  • 2024-02-22

Analog Devices (ADI) has made a special arrangement with TSMC to supply long-term wafer capacity through Japan Advanced Semiconductor Manufacturing (JASM), TSMC’s majority-owned manufacturing subsidiary in Kumamoto Prefecture, Japan. Building on ADI’s more than 30-year partnership with TSMC, this adds another option for ADI to secure additional capacity of fine-pitch technology nodes to serve critical platforms across its business, including wireless BMS (wBMS) and Gigabit Multimedia Serial Link (GMSL) applications.

Two Backend Fabs sold – one in the Philippines, one in Korea
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Learn more:
infineon.com
  • Industry News
  • 2024-02-22

Infineon Technologies will sell two backend manufacturing sites, one in Cavite, Philippines and one in Cheonan, South Korea, to two fully owned subsidiaries of ASE Technology, a provider of independent semiconductor manufacturing services in assembly and test. The plants currently run under the entity names Infineon Technologies Manufacturing Ltd. – Philippine Branch (Cavite) and Infineon Technologies Power Semitech Co., Ltd. (Cheonan) and will be acquired by ASE Inc. and ASE Korea Inc. respectively. Post the transaction, ASE will assume operations with current employees, and further develop both sites to support multiple customers. As such, ASE and Infineon have also concluded long-term supply agreements under which Infineon will continue to receive previously established services as well as services for new products to support its customers and fulfill existing commitments. Infineon Technologies Power Semitech is a backend manufacturing site with around 300 employees. The fab is located in Cheonan, South Korea, about 60 miles south of Seoul. Infineon Technologies Cavite, is a backend manufacturing site with more than 900 employees. It is located in one of the fastest growing and most industrialized provinces in the Philippines. The transaction is expected to close towards the end of the second calendar quarter of 2024, when all pending closing conditions will have been fulfilled.

The Battery Show Europe
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Learn more:
thebatteryshow.eu
  • Event News
  • 2024-02-21

The Battery Show Europe and Electric & Hybrid Vehicle Technology Expo return to the Messe Stuttgart, Germany on 18-20 June, 2024. Bringing together 19,000 + engineers, executives, managers, R&D experts, manufacturing professionals, quality control experts, buyers, thought leaders and professionals from across the advanced battery and H/EV supply chain, this is an event that you can't miss! Explore 800+ advanced battery and EV manufacturing suppliers representing the entire supply chain from raw materials through end of life, featuring some stellar industry names such as Donaldson Filtration Solutions, Keyence, Siemens and Lyric Germany. Expand new ideas on increasing efficiencies and lowering costs at The Battery Show Europe Conference and Open Tech Forum. With 37+ hours of educational content, exploring the latest hot topics such as next-gen materials, advances in battery tech and sustainability, recycling and end of life options, this is the place to place to broaden your understanding of the advanced battery and H/EV industry. That's not all, we're also giving you the opportunity to learn about the latest market innovations and cutting-edge solutions during live product showcases from top-industry suppliers on the expo floor, as well as the chance to network with thousands of industry peers and form new relationships over drinks and light bites at our free-to-attend hosted networking receptions. Register today to attend the leading advanced battery and H/EV technology tradeshow and conference in Europe!

Higher Power Density with 100 V GaN Power Stages
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Learn more:
ti.com
  • Product Release
  • 2024-02-20

Texas Instruments introduced two power conversion device portfolios to help engineers achieve more power in smaller spaces. According to TI these devices are "providing the highest power density at a lower cost". TI's 100 V integrated GaN power stages, LMG2100R044 and LMG3100R017, feature thermally enhanced dual-side cooled package technology to simplify thermal designs and "achieve the highest power density in mid-voltage applications at more than 1.5 kW/in3", which equals about 91,5 W/cm3. TI claims that its 1.5 W isolated DC/DC modules with integrated transformers are "the industry's smallest and most power-dense, helping engineers shrink the isolated bias power-supply size in automotive and industrial systems by over 89 %". The devices allow designers to accomplish a system efficiency of 98% or higher given the lower output capacitance and lower gate-drive losses. A key enabler of the thermal performance in the 100 V GaN portfolio is the thermally enhanced dual-side cooled package. There is also an automotive-qualified solution available in this small package.

Seminars about Sensor and Measurement Topics
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Learn more:
ama-sensorik.de
  • Event News
  • 2024-02-20

The AMA Association for Sensors and Measurement (AMA) has published its seminar program for 2024, which includes a variety of seminars in German language on various topics, including ultrasonic measurement technology, optical spectroscopy, displacement measurement, industrial image processing and the discussion on "Chat-GPT - hype or hysteria". The seminars are offered online or as face-to-face events and are under scientific direction. They offer in-depth knowledge about sensors, sensor systems, their functions and possible applications. Participants are given the opportunity to choose the right sensors for their application and evaluate their advantages and disadvantages. The seminars are said to offer deep insights into specialist topics in sensor and measurement technology. The AMA seminars aim to provide participants with manufacturer-independent knowledge and to inform them about the current state of sensor and measurement technology. They are aimed at experts from the fields of design/development, research, production and sales.

Battery Exhibition and Conference
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Learn more:
ees-europe.com
  • Event News
  • 2024-02-20

The cooperation between ees Europe, an exhibition for batteries and energy storage systems and InterBattery, a battery exhibition in South Korea, enters its second round this year. The InterBattery Europe Showcase will once again provide visitors of ees Europe with an additional exhibition area where they can network with companies from South Korea. The Battery Day Europe conference complements the presentations in the exhibition area. This year, the conference will provide comprehensive insights into the world of EV batteries, covering everything from the latest legislation, how to secure battery materials as well as groundbreaking technologies and business trends. Special attention will be given to the German-Korean cooperation in the ReLioS network for innovative approaches to battery recycling. The conference will also shine a light on EV battery production technologies. ees Europe takes place from June 19–21, 2024 as part of The smarter E Europe, Europe's largest alliance of exhibitions for the energy industry, at Messe München in Munich. More than 115,000 visitors from all over the world and over 2,800 exhibitors – more than 1,000 of whom are battery and energy storage system suppliers – are expected to attend. The InterBattery Europe Showcase exhibition area is expected to host around 200 companies – including companies such as Samsung SDI, LG Energy Solution and SK On. Last year, this additional exhibition space presented 72 companies, 62 of which were South Korean.

Power Converters run on Vibrational Energy
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Learn more:
leti-cea.com
  • Industry News
  • 2024-02-20

University of California San Diego and CEA-Leti (located in Grenoble/France) scientists have developed a piezoelectric-based DC/DC converter that unifies all power switches onto a single chip to increase power density. This power topology, which extends beyond existing topologies, blends the advantages of piezoelectric converters with capacitive-based DC/DC converters. The power converters developed by the team are much smaller than the huge, bulky inductors currently used for this role. The devices could eventually be used for any type of DC/DC conversation, in everything from smart phones, to computers, to server farms and AR/VR headsets. The results were presented in the paper, "An Integrated Dual-side Series/Parallel Piezoelectric Resonator-based 20-to-2.2V DC/DC Converter Achieving a 310% Loss Reduction", at ISSCC 2024. The paper explains that a hybrid DSPPR converter exploits integrated circuits' ability to offer sophisticated power stages in a small area compared to discrete designs, and enables efficient device operation at voltage conversion ratios (VCR) of less than 0.1.

Plug-and-Play Gate Driver for High-Voltage SiC Power Modules
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Learn more:
microchip.com
  • Product Release
  • 2024-02-20

To help developers implement SiC solutions and fast-track the development process, Microchip Technology has developed the 3.3 kV XIFM plug-and-play mSiC gate driver with patented Augmented Switching technology, which is designed to work out-of-the-box with preconfigured module settings. To speed time to market, the complex development work of designing, testing and qualifying a gate driver circuit design is already completed with this plug-and-play solution. The XIFM digital gate driver is a compact solution that features digital control, an integrated power supply and a robust fiber-optic interface that improves noise immunity. This gate driver has preconfigured "turn-on/off" gate drive profiles that are tailored to optimize module performance. It incorporates 10.2 kV primary-to-secondary reinforced isolation with built-in monitoring and protection functions including temperature and DC link monitoring, Undervoltage Lockout (UVLO), Overvoltage Lockout (OVLO), short-circuit/overcurrent protection (DESAT) and Negative Temperature Coefficient (NTC). This gate driver also complies with EN 50155, a key specification for railway applications.

New EMEA Headquarters for Distributor
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Learn more:
eu.mouser.com
  • Industry News
  • 2024-02-20

Mouser Electronics has opened its new EMEA headquarters in Munich. The opening took place in the presence of distinguished guests from customers, manufacturers, members of the media, TTI and local support companies. The new office, which is located relatively close to the Olympic stadium and directly above a subway station, is already in operation: People from 23 nations work there. Mark Burr-Lonnon, Senior Vice President Global Service provided a look at the company history from $ 21 million of sales in 2008 to far more than $ 1 billion in 2023 – and all of this just in Europe. While Europe participated less than 10 % to Mouser's worldwide sales in 2008 it contributed almost exactly one third to Mouser's worldwide turnover in 2023. And this is why Mark Burr-Lonnon invited all guests to participate in an office tour after enjoying a piece of a Mouser celebration cake, that he cut in person.

Compact MOSFET Modules for Efficiencies of up to 98%
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Learn more:
semiq.com
  • Product Release
  • 2024-02-19

SemiQ added a product to its QSiC family. The QSiC 1200 V SiC MOSFET modules in full-bridge configurations deliver near zero switching loss, significantly improving efficiency, reducing heat dissipation, and allowing the use of smaller heatsinks. With a high breakdown voltage exceeding 1400 V, the QSiC modules in full-bridge configurations withstand high-temperature operation at Tj = 175 °C with minimal RDS(on) shift across the entire temperature spectrum. Using high-performance ceramics, SemiQ's modules are well-suited for demanding applications that require bidirectional power flow or a broader range of control, such as solar inverters, drives and chargers for Electric Vehicles DC/DC converters and power supplies. In solar inverter applications, SemiQ's technology allows reaching an efficiency of up to 98 % - as well as more compact designs. It helps reduce heat loss, improve thermal stability, and enhance reliability, backed by over 54 million hours of HTRB/H3TRB testing. The 1200 V MOSFETs also maximize efficiency gains in DC/DC converters while enhancing reliability and minimizing power dissipation. To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level, and all parts have undergone testing surpassing 1400V.

Distribution Agreement expanded to USA, Australia & New Zealand
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Learn more:
pulsiv.co.uk
  • Industry News
  • 2024-02-16

Pulsiv of Cambridge (UK) and Astute Electronics of Stevenage (UK) have expanded their distribution agreement to include USA, Australia and New Zealand. Astute Electronics was founded 35 years ago "to bridge the gap between broadline and independent distribution in the European supply chain". Still privately owned, the business now operates across five continents. Using a patented switching technique, Pulsiv has developed an special method for converting AC to DC that delivers a combination of benefits in power electronics designs. This technology has extended the range of conventional flyback topologies to replace expensive LLC solutions, while achieving "an unrivalled efficiency profile". Pulsiv offers Osmium microcontrollers which implement these switching techniques, AC/DC front-end circuit configurations that include a Pulsiv OSMIUM microcontroller and supporting components for a complete AC/DC front-end design as well as evaluation boards and reference designs.

Distributor stocks MOSFET Family with now higher Power Efficiency
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Learn more:
rutronik24.com
  • Product Release
  • 2024-02-15

Rutronik integrates the StrongIRFET™ 2 MOSFETs from Infineon into its product portfolio. This generation provides a higher power efficiency, which leads to improved overall system performance. Due to a higher current load tolerance, several parallel connected components are no longer necessary. That saves space on the PCB and reduces costs. The transistors are in stock and available in different housing variants such as TO-220; TO-220 FullPAK, D2PAK, D2PAK 7-pin, DPAK, and TOLL. Compared to the previous StrongIRFET components in the 40 V to 100 V range, the technology offers up to 40 percent better on-resistance and up to 60 percent lower nominal gate charge. In addition, higher rated currents enable improved current carrying capacity and the new generation is suitable for both high and low switching frequencies. Standard pinouts enable simple drop-in replacement. The MOSFETs are 100 percent safety-tested, RoHS-compliant, halogen-free following IEC61249-2-21 product validation, and meet the JEDEC standard. They can be used in a wide range of applications, e.g. for UPS, battery management, or motor drives.

Semiconductor Company to buy PCB Design Company
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Learn more:
renesas.com
  • Industry News
  • 2024-02-15

Renesas intends to acquire Altium by way of a Scheme of Arrangement. The acquisition is said to enable "two industry leaders to join forces and establish an integrated and open electronics system design and lifecycle management platform that allows for collaboration across component, subsystem, and system-level design".  Together, Renesas and Altium, aim to build an integrated and open electronics system design and lifecycle management platform that unifies the steps from component selection and evaluation to simulation and PCB physical design at a system level. The acquisition brings together Altium's cloud platform capabilities with Renesas' semiconductor portfolio. The combination will also enable integration with third-party vendors across the ecosystem to execute all electronic design steps seamlessly on the cloud. The electronics system design and lifecycle management platform will deliver integration and standardization of various electronic design data and functions and enhanced component lifecycle management, while enabling seamless digital iteration of design processes to increase overall productivity. This is said to bring "significantly faster innovation" and to "lower barriers to entry for system designers by reducing development resources and inefficiencies". Altium's history began in 1985 from Australia as one of the world's first printed-circuit board (PCB) design tool providers. The transaction has been unanimously approved by the boards of directors of both companies and is expected to close in the second half of 2024. Altium will continue to be led by CEO Aram Mirkazemi as a wholly-owned subsidiary of Renesas.

Schottky Barrier Diodes with short Reverse Recovery Time
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Learn more:
rohm.com
  • Product Release
  • 2024-02-15

ROHM has developed 100 V breakdown Schottky barrier diodes (SBDs) that deliver a short reverse recovery time (trr) of 15ns for power supply and protection circuits in automotive, industrial, and consumer applications. Although numerous types of diodes exist, highly efficient SBDs are increasingly being used inside a variety of applications. Particularly SBDs with a trench MOS structure that provide lower VF than planar types enable higher efficiency in rectification applications. One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies – resulting in higher power loss when used for switching. In response, ROHM developed a series utilizing a proprietary trench MOS structure that simultaneously reduces both VF and IR (which are in a trade-off relationship) while also achieving a short trr. Expanding on the four existing conventional SBD lineups optimized for a variety of requirements, the YQ series is ROHM's first to adopt a trench MOS structure. The design reduces trr losses by approximately 37 % and overall switching losses by around 26 % over general trench-type MOS products. As such, the devices are are well-suited for sets requiring high-speed switching, such as drive circuits for automotive LED headlamps and DC-DC converters in xEVs that are prone to generate heat.

How to Design the Compensation Circuit for a Flyback Converter
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Learn more:
we-online.com
  • Product Release
  • 2024-02-13

Würth Elektronik has published its Application Note "Compensating the feedback loop of a current-controlled flyback converter with optocoupler". The guide is aimed at developers looking to use a DC/DC flyback converter to achieve greater stability and reliability in power supply design. It might also be useful for those who use optocouplers for galvanic isolation of the feedback path. Applications include primary and auxiliary power supplies for home appliances, battery chargers for smartphones and tablets, as well as LED lighting. This Application Note also provides assistance with power supplies for desktop and laptop computers, industrial power supplies and auxiliary supplies in motor drives, or for Power-over-Ethernet (PoE). AppNote ANP113 explains in detail how the feedback loop can be compensated using a current-controlled flyback converter with optocoupler, and which aspects require special attention. The CTR (current transfer ratio) influences the control loop of the compensation circuit and therefore must be carefully considered in the design stage. ANP113 places particular emphasis on design constraints imposed by the optocoupler parameters and on the related solutions. The validation results of a 30 W flyback converter prototype are also included in the AppNote.

Automotive-Grade SiC MOSFET Half Bridge SMPD Modules
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Learn more:
inventchip.com
  • Product Release
  • 2024-02-13

Inventchip Technology has added two automotive-grade SiC MOSFET half bridge SMPD modules named IVSM12080HA2Z and IVSM06025HA2Z. The modules are specified 1200 V/80 mΩ and 650 V/25 mΩ. SMPD is a compact, topside-cooling surface-mounted package with a plastic surface size of 25 mm x 23 mm. Compared with TO-247, the SMPD saves over 25 % PCB space, and the more important thing is that the SMPD reduces the half-bridge stray-inductance of power loop by around 40 %. The reduction of the stray inductance reduces MOSFET VDS overshoot, VGS ringing, switching loss and EMI noise. It helps engineers to solve the critical design issues and achieve a high density and reliable power conversion design. Compared with TO-247 with external electrical isolation assembly, SMPD with traditional AL2O3 and SiN lowers junction-to-heatsink thermal resistance by over 20 % and 50 % respectively for the same 25 mΩ/1200 V SiC MOSFET die. It eases the thermal design and increases the power handling potential. A NTC is also integrated in the SMPD package. It senses the DBC temperature directly and offers more accurate module temperature sensing for reliable thermal protection. The SMPD package has a minimum 4 mm creepage from terminals to the package's heatsink mounting surface, which can safely work for both 400 V and 800 V systems without isolation reinforce. Both modules are AEC Q101 and AQG 324 certified.

Joint Efforts for Magnetic Component Solutions
  • Product Release
  • 2024-02-12

ITG Electronics has collaborated with STMicroelectronics (ST) in developing magnetic component solutions for 54 V/48 V to 12 V converter applications. ST's patented 54 V/48 V to 12 V stacked buck converter features an on-board solution with a quarter brick space using the PM6780 dual digital multiphase controller, the STPRDC02A high-voltage full-bridge driver, and ITG's L101353A-3R6MHF non-coupling dual inductors. This magnetics design collaboration is named Stacked buck converter with unified coupled inductor. Combined with ST's PM6780 and STPRDC02A, ITG's L101456A-1R4MHF can elevate the overall power rating of ST's 48 V solution to 1500 W. This product combination is claimed to "provide the industry's highest power density rating for 48 V solutions". The on-board stacked buck converter 48 V conversion system offers cost savings, form factor flexibility, and a customizable design compared to power-module designs.

100 V bi-directional GaN IC for 48 V/60 V BMS Applications
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Learn more:
innoscience.com
  • Product Release
  • 2024-02-12

Innoscience Technology has launched another 100 V bi-directional member of the company's VGaN IC family. The first family of VGaN devices rated 40 V with an on-resistance range between 1.2 mOhm and 12 mOhm have been successfully deployed in the USB OVP of several mobile phones. The 100 V VGaN (INV100FQ030A) can be employed to achieve high efficiency in 48 V or 60 V battery management systems (BMS), as well as for high-side load switch applications in bidirectional converters, switching circuits in power systems, and other fields. Such device it is usable in applications such as home batteries, portable charging stations, e-scooters, e-bikes etc. One VGaN replaces two back-to-back Si MOSFETs; they are connected with a common drain to achieve bidirectional switching of battery charging and discharging, further reducing on-resistance and loss significantly with respect to traditional Silicon solution. BOM count, PCB space and costs are also reduced accordingly. The INV100FQ030A 100V VGaN IC supports two-way pass-through, two-way cut-off and no-reverse-recovery modes of operation. Devices feature a low gate charge of 90 nC, a dynamic on-resistance of 3.2 mOhm and a package size of 4 mm x 6 mm. These 100 V GaN series products are in mass production in En-FCQFN (exposed top side cooling) and FCQFN packaging.

Miniature Inductor in C0402 Package for all Market Applications
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Learn more:
delevan.com
  • Product Release
  • 2024-02-09

Delevan's C0402 miniature RF inductor is integrated in a package which is claimed to be "ultra-small". A high reliability 0402 version of the C0402, for use in critical applications, is also available. The C0402 is manufactured and tested in the USA by an AS9100D certified company. It's offered in inductance ranges of 1.0nH to 120nH and features Self Resonant Frequencies, which provide stable inductor performance into the multi GHz range. Designed with a high-temperature ceramic core and magnet wire the C0402 inductor is rated for an operating temperature range of - 40°C to +125°C and is AEC-Q200 Grade 1 compliant. The C0402 is available with Gold terminations for use with epoxy bonded or solderable applications.

Energy Balance Calculator for enhanced battery life optimization
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Learn more:
nexperia.com
  • Product Release
  • 2024-02-08

Nexperia announced the release of the Energy Balance Calculator, which is a web-based tool designed to assist battery management engineers in maximizing the battery life of their applications. The calculator facilitates the integration of Nexperia's Energy Harvesting PMICs into their systems by providing engineers with precise data for informed decision-making. At the core of Nexperia's Energy Harvesting PMICs is the Maximum Power Point Tracking (MPPT) algorithm, enabling efficient energy harvest from the environment for various consumer electronics and IoT devices. To utilize these PMICs at their full potential, the calculator works with real-world technical parameters. It calculates the energy delivered to the load and the energy compensation. Thus, offering insights into potential battery life extension or achieving energy autonomy. Engineers can furthermore visualize system efficiency and precision through an efficiency curve provided by the tool.

Isolated Power Module with 84 % Efficiency and Protection
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Learn more:
we-online.com
  • Product Release
  • 2024-02-07

The MagI3C-FISM power modules from Würth Elektronik are now complemented by the WPME-FISM 'Fixed Isolated SIP/SMT Module' SMT-8 with 3.3V to 5V, rated for 1W POUT. The DC/DC voltage converter with fixed output voltage and integrated switching power stage, transformer, as well as input and output capacitance, is 100% pin-to-pin compatible with the previous MagI3C-FISM, however, it offers improved properties – the efficiency goes up to 84 percent, the ambient temperature range is now specified with 105°C and the isolation voltage is 3kV (for 60 seconds). Like some of its predecessors, this power module has continuous short-circuit protection. The MagI3C FISM power modules do not require any external components for operation. Applications for the module include supplying voltages for interfaces and microcontrollers in test and measurement technology or industrial electronics. It serves as simple functional isolation for overvoltage protection. For example, it prevents ground loops and shifts as well as interference in the signal path or sensor systems. The entire product range is UL 62368-1 recognized. The low level of conducted and radiated electromagnetic interference complies with the EN55032 Class B / CISPR-32 standard.

Cooperation for sustainable SiC Production
  • Industry News
  • 2024-02-06

ESK-SIC, a company which is active in silicon carbide (SiC) materials, and Kyocera have started a strategic partnership with the goal to develop "innovative solutions for the sustainable production of silicon carbide and the associated end products". By-products and end-of-life ceramics will be recycled using RECOSiC technology in order to produce raw materials that are specifically tailored to various end applications. Compared to currently available SiC raw materials on the market in terms of material science aspects, while minimising the carbon footprint of the process, the RECOSiC recycling technology is said to bring a technological upgrade. The partnership between ESK-SIC and Kyocera aims to improve the efficiency and sustainability of the entire silicon carbide value chain. This will involve developing new manufacturing technologies, optimising production processes, researching innovative applications and establishing circular economy principles for the recycling of SiC materials.

Automotive qualified -60V P-channel MOSFETs
  • Product Release
  • 2024-02-05

Toshiba Electronics announces the availability of XPH8R316MC and XPH13016MC, two more -60V P-channel MOSFETs based upon their U-MOS VI process. The devices are tailored for use in automotive applications such as load switches, semiconductor relays and motor drives. The AEC-Q101 qualified components are housed in an SOP Advance (WF) package - a surface mount style with a wettable flank terminal structure facilitating automated optical inspection (AOI) of the solder joints. The copper connectivity within the package reduces package resistance, improves efficiency and reduces heat build-up. The XPH8R316MC is rated for -90A continuous drain current (ID) and the XPH13016MC is rated for an ID of -60A. The pulsed drain current (IDP) is double these values, -180A and -120A, respectively. Both devices are rated for a drain-source voltage (VDSS) of -60V and are capable of operating at channel temperatures (Tch) up to 175ºC. The maximum drain-source on-resistance (RDS(ON)) of the XPH8R316MC is 8.3mΩ. For the XPH13016MC, the value is 12.9mΩ.

Call for Papers
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Learn more:
pcimasia-expo.cn
  • Event News
  • 2024-02-05

PCIM Asia is calling for papers. The event will take place from 28–30.8.2024 in Shenzhen, China. As a platform connecting the academia and industry, the speakers can gain direct feedback from both sides. Within this framework the organizer encourage people to present their research. The organizer, Messe Frankfurt, expects "over 600 qualified audiences, mainly R&D engineers" for PCIM Asia. Three special awards (the Best Paper Award, the Young Engineer Award and the University Scientist Award) will be given out to some presenters. In parallel to the conference there will be an exhibition with more than 200 exhibitors. The official deadline for abstract submissions is the 4th of March, 2024.

Acquisition: Electronic Inks added to Advanced Materials Portfolio
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Learn more:
heraeus.com
  • Industry News
  • 2024-02-01

Heraeus Electronics has acquired the PriElex electronics inks business line from Kayaku Advanced Materials. PriElex is known for its expertise in electronics inks. By joining forces with Heraeus Electronics the acquisition is expected to enhance Heraeus' position and provide customers with an even broader range of solutions for thick film applications. Partners and customers of both Heraeus Electronics and PriElex can expect a smooth transition and ongoing support throughout the integration process. Furthermore, customers can be assured of uninterrupted service and access to a broader portfolio of advanced solutions.

Surface-Mount Resettable Fuse Rated to 240VAC
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Learn more:
belfuse.com
  • Product Release
  • 2024-01-31

Bel Fuse announced "the industry's only surface mount, PPTC resettable fuse, line-volt-rated to 240VAC". Designed to protect against electrical overloads and short circuits, Bel 0ZAF resettable fuses provide circuit protection for a variety of applications in the IoT, industrial, and medical sectors. These fuses are crucial for use in safeguarding industrial controls, test and measurement equipment, robotics, and safety systems, and deliver the reliability and durability required by these advanced technologies. Their soldered surface mount design not only offers cost efficiency for PC mount assembly, but also accelerates design and production timelines by eliminating the need for through-hole mounting. Bel 0ZAF fuses are UL recognized components and IEC certified.

Low Power High Voltage Diodes
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Learn more:
deantechnology.com
  • Product Release
  • 2024-01-31

Dean Technology (DTI) has introduced a series of high voltage diodes. This so-called VDRM Series is an axial-leaded, high voltage diode line that offers industry standard performance and high reliability. VDRM units range from 2.5 to 16 kV, 50 to 125 mA, and have a maximum reverse recovery time of 200 ns. These diodes are best suited for low to medium power, small form-factor applications. Further, VDRM diodes offer a miniature package size and are compliant to the RoHS directive. In addition to the new VDRM Series, DTI also offers a large catalog of diodes for many different high voltage needs.

Over-voltage protection: SMD Varistors with high Surge Current Capability
  • Product Release
  • 2024-01-30

TDK presents two varistor series in SMD design. The types of both series are available for a wide range of operating voltages from 175VRMS to 460VRMS, corresponding to 225VDC to 615VDC. While the B72210M series of surge devices, which are equivalent to S14 leaded disk varistors, offers a surge current capability of 6000A, the B72214M series types, which are equivalent to S20 leaded disk varistors, have a high surge current capability of 10,000A. All types are designed for a high operating temperature of a maximum of +125 °C and extremely damp heat environment (85% relative humidity at +85 °C). The SMD high surge series is qualified to AEC-Q200. In terms of designs, all types are available in a horizontal as well as vertical version. The horizontal version of the B72210M series has dimensions of 22 x 15 x 11 mm3, while the B72214M series has dimensions of 27 x 18 x 11 mm3, (L x W x H). The vertical types have dimensions of 15 x 10 x 20 mm3 and 18 x 10 x 25.5 mm3, respectively. Typical applications of SMD surge protection components are on-board chargers, power supplies, frequency converters, photovoltaic systems and household appliances.

Offline Flyback Switcher IC with Zero-Voltage Switching (ZVS) for 95 % Efficiency
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Learn more:
power.com
  • Product Release
  • 2024-01-30

Power Integrations has released the InnoSwitch5-Pro family of high-efficiency, programmable flyback switcher ICs. The single-chip switcher achieves over 95 percent efficiency with a novel secondary-side control scheme which achieves zero-voltage switching (ZVS) without a dedicated and costly additional high-voltage switch. The IC, which features a 750V or a 900V PowiGaN primary switch, primary-side controller, FluxLink isolated feedback and secondary controller with an I2C interface, is intended for single- or multi-port USB PD adapters. Applications are notebooks, high-end cellphones and other portable consumer products, including designs that require the USB PD EPR (Extended Power Range) protocol. For example, the company has demonstrated 140W / 28V USB PD adapters in 68,8 cm3 using 106 components. InnoSwitch5-Pro flyback switcher ICs feature lossless input line voltage sensing on the secondary side for adaptive DCM/CCM and ZVS control to maximize efficiency and simplify design across line and load. The ICs also feature a post-production tolerance offset to facilitate accurate output constant-current (CC) control of better than two percent to support the UFCS protocol. An efficiency of more than 95 percent allows designers to eliminate heat sinks, spreaders and potting materials for thermal management.

Dual-Channel High-Side Switches with Protection for Automotive Applications
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Learn more:
diodes.com
  • Product Release
  • 2024-01-30

Diodes has introduced its first automotive-compliant (according to AEC-Q100), dual-channel, high-side power switches - the ZXMS82090S14PQ, ZXMS82120S14PQ, and ZXMS82180S14PQ - as an expansion of its IntelliFET self-protected MOSFET portfolio. These intelligent switches are said to "deliver high power within a compact footprint while also providing robust protection and diagnostic capabilities". The series is designed for driving 12V automotive loads, such as LEDs, bulbs, actuators, and motors in automotive body control and lighting systems. The trio all feature a dual 41V-rated n-channel MOSFET array with onboard circuitry that protects against short circuits, manages inrush currents, and safeguards against overvoltage conditions including load dumps. In addition, the switches provide overtemperature protection with auto-restart, plus protection against electrostatic discharge damage. Loss of ground and reverse polarity protection can also be implemented with the aid of a few external components. A dedicated current sense pin provides analog current monitoring of the outputs and fault indication for short-to-battery, short-to-ground, and open-load detection. These devices provide smaller footprint alternatives to relays, fuses, and discrete circuits. Supplied in a SO-14EP package they are also form, fit, and functional equivalents for existing power switch devices, where customers need improved product supply.

Dedicated Website: Alternative Energy Resource Hub with Trusted Products for Design Engineers
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Learn more:
mouser.com
  • Product Release
  • 2024-01-30

On a dedicated website Mouser Electronics now provides engineers with key information to solve today's design challenges through its dedicated alternative energy resource centre, featuring a comprehensive selection of content, products and solutions. Readers will discover uses of renewable power, insights into commercial and industrial electric vehicles, and learn how energy storage systems will be key for the transition to renewable energy. The content offers perspectives on the alternative energy landscape, providing a deeper look into policy changes, energy harvesting practices and energy storage installation parameters. The resource centre is a collection of articles, blogs, and videos.

More Discrete Semiconductors on the Linecard
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Learn more:
ttieurope.com
  • Industry News
  • 2024-01-29

TTI Europe has become an authorized distributor of Panjit semiconductors. Doing so TTI adds a range of diodes, MOSFETs, protection devices, IGBTs, SiC devices, and ICs to its linecard. Panjit has manufactured semiconductor discrete components, including diodes, Transient Voltage Suppressors (TVS) and transistors for more than 30 years. The company has a wide range of MOSFET, IGBT, FRED, Schottky, ESD Array and SiC devices, bipolar junction transistors, bridges and more, which are suited for markets such as data centres, industrial control, automotive, electric vehicles and 5G. On the picture you see – from left to right: Markus Walz, Business Development Manager TTI Europe; Alla Zoubar-Bloch, Sales Manager Central and Northern Europe, Panjit; Karen Lee, Managing Director Europe, Panjit; Joerg Frodl, Director Product Marketing Europe Passives & Discretes TTI Europe.

Joint Lab for NEV Developments with GaN and SiC Technology
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Learn more:
navitassemi.com
  • Industry News
  • 2024-01-25

Navitas Semiconductor and SHINRY announced the opening of a joint R&D power laboratory to accelerate the development of New-Energy Vehicle (NEV) power systems enabled by Navitas' GaNFast™ technology. SHINRY is active in on-board power supplies and strategic supplier to Honda, Hyundai, BYD, Geely, XPENG, BAIC and other automobile manufacturers. The joint lab accelerates development projects, with GaN technology combining with system-design skills and engineering talent to enable higher high power density, lightweight, efficient designs that translate to faster charging and extended range, with faster time-to-market. Navitas' own dedicated EV system Design Center, located in Shanghai will provide comprehensive technical support for the joint lab. Navitas will not only supply SHINRY with power devices, but will also engage in system-level R&D from the initial stages of product specification and design, through to test platforms and customized packaging solutions. The result will be more efficient, higher power density, more reliable, and cost-effective power systems for NEVs.

Joint Innovation Application Center for PD fast charging and and CO2-saving Solutions
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Learn more:
infineon.com
  • Industry News
  • 2024-01-25

Infineon Technologies announced its joint Innovation Application Center in Shenzhen with Anker Innovations, a company which is very active in charging technology. With the center already fully operating, it is paving the way for more energy-efficient and CO2-saving charging solutions that support decarbonization. Driven by the growing consumer demand for faster charging solutions due to an increasing usage of mobile devices, laptops and other battery-powered devices, the idea of establishing an Anker-Infineon Innovation Application Center dated back to 2021. After two years of preparation, this Innovation Application Center now serves as application hub for local partners to develop power-delivery (PD) fast charging solutions with higher power density, mainly based on Infineon's next-generation Hybrid Flyback (HFB) controller product family and the CoolGaN IPS for fast chargers above 100W. With the Innovation Application Center also intend to shorten the application cycle and accelerate the time to market for future products. Beyond charging solutions, the joint lab is focusing on a more diversified range of consumer applications using semiconductors based on wide-bandgap materials such as GaN.

Head of Sales for Passives and Electromechanical Components
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Learn more:
we-online.com
  • People
  • 2024-01-25

Würth Elektronik eiSos combines sales for the product groups 'passive and electromechanical components' into a single management structure. The Head of Sales in the new structure is Heiko Arnold. He was previously responsible for the sales of passive components in Germany, has now also taken over responsibility for the sales of electromechanical components. Heiko Arnold has been with Würth Elektronik eiSos for 24 years and looks back over more than 20 years of national and international management experience in sales. He points out: "We always see Sales and Customer Service in its entirety."

Compact SOT-223-3 600V MOSFETs for Smaller, Lower Profile Designs
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Learn more:
rohm.com
  • Product Release
  • 2024-01-24

ROHM Semiconductor announced a lineup of compact 600V Super Junction MOSFETs, the R6004END4 / R6003KND4 / R6006KND4 / R6002JND4 / R6003JND4. These devices are well-suited for small lighting power supplies, pumps, and motors. Compared to the conventional TO-252 package (6.60mm × 10.00mm × 2.30mm), ROHM's products reduce area and thickness by 31% and 27%, contributing to smaller, lower profile applications. At the same time, the same footprint as the TO-252 package can be used, enabling mounting on existing circuit boards without modification. Offering distinctive features, three of the models are optimized for compact power supplies. The R6004END4, characterized by low noise, is suitable for applications where noise is a concern, while the R6003KND4 and R6006KND4, capable of high-speed switching, are designed for sets requiring low loss, high efficiency operation. The R6002JND4 and R6003JND4 utilize proprietary PrestoMOS technology to achieve significantly lower switching losses by speeding up reverse recovery time (trr) to typically 40ns or, respectively, 42ns, making them well-suited for motor-equipped devices. These devices' gate capacities QGS at 15V are specified to be 7nC and, respectively, 8nC.

100V MOSFET in Double-Sided Cooling DFN 5x6 Package for almost 200A
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Learn more:
aosmd.com
  • Product Release
  • 2024-01-24

Alpha and Omega Semiconductor announced the AONA66916, which is a 100V MOSFET packaged in a top and bottom side cooling DFN 5 x 6 package. This package keeps the semiconductor products cooler. Typically, when using the standard DFN 5x6 package, the bottom contact is the main contributor for cooling, and most of the heat generated by the Power MOSFETs will be transferred to the PCB. This increases the PCB thermal management design considerations to meet system requirements. AOS' top and bottom cooling DFN 5x6 package enables heat transfer between the exposed top contact and heat sink due to its large surface contact area construction. This allows the device to achieve a low thermal resistance (Rthc-top max) of 0.5°C / W with results being transferred to the PCB board, enabling significant thermal performance improvements. The top exposed DFN 5x6 package of the AONA66916 shares the same 5mm x 6mm footprint as AOS' standard DFN 5x6 package, eliminating the need to modify existing PCB layouts. AONA66916 has a maximum RDS(on) rating of 3.4mOhms and operates with a maximum junction temperature of 175°C. Its continuous drain current is specified to be 197A at 25°C.

New Headquarters and Manufacturing Center in Chandler, AZ
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Learn more:
sarasmicro.com
  • Industry News
  • 2024-01-24

Saras Micro Devices has opened its new headquarters and manufacturing facility in Chandler, Arizona. The decision to open the manufacturing center in Arizona is part of Saras' longer-term strategy to support its growth in the high-performance computing artificial intelligence /machine learning sectors and capitalize on the rapidly expanding semiconductor ecosystem in the region. The company is relocating its headquarters from Atlanta, Georgia, where its Research & Development Center will remain. The move involves a planned investment of over $50 million in the Chandler facility covering about 10,000 m2 of clean room, manufacturing, and administrative space. Saras will employ approximately 50 people in the near term, which will be primarily composed of engineering talent. By the close of 2025, both the site and staff will undergo significant expansion, with a projected growth to more than 12.000 m2, inclusive of a larger clean room of about 12,000 m2. The proximity of the new headquarters to other key semiconductor ecosystem partners, coupled with Arizona's cost-effective operations and investment in talent development, uniquely positions Saras to capitalize on these strategic advantages while contributing to a robust domestic semiconductor industry.

SiC FET in D2PAK for 750V EV Designs
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Learn more:
qorvo.com
  • Product Release
  • 2024-01-24

Qorvo unveiled an automotive-qualified SiC FET offering an RDS(on) of 9mΩ in a compact D2PAK-7L package. This 750V SiC FET is the first in a new family of pin-compatible SiC FETs from Qorvo with RDS(on) options up to 60mΩ, making them well suited for electric vehicle applications, including on-board chargers, DC/DC converters and PTC heater modules. The UJ4SC075009B7S features a 9mΩ typical RDS(on) at 25°C needed for reducing conduction losses and maximizing efficiency in high voltage, multi-kilowatt automotive applications. Its surface-mount package enables automated assembly flows. This 750V family complements Qorvo's existing 1200V and 1700V automotive SiC FETs in D2PAK packaging to form a complete portfolio addressing EV applications that span 400V and 800V battery architectures. These fourth generation SiC FETs leverage Qorvo's circuit configuration, in which a SiC JFET is co-packaged with a Si MOSFET to produce a device with the efficiency advantages of wide bandgap switch technology and the simpler gate drive of silicon MOSFETs. The key features of the UJ4SC075009B7S include a threshold voltage VG(th) of typically 4.5V allowing 0 to 15V drive, a body diode operating with a VFSD of 1.1V, a reverse recovery Qrr of 338nC and a gate charge QG of 75nC. The AECQ101-qualified device operates at temperatures up to 175°C.

Measurement Instruments in Europe
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Learn more:
distrelec.biz
  • Industry News
  • 2024-01-23

Distrelec announced the introduction of KPS test and measurement instruments for sale throughout Europe. KPS is a manufacturer of electrical measurement instruments for professional installers, electricians and technicians. The Distrelec portfolio now includes a DCM clamp meter that is manufactured in Europe. KPS keeps their EMEA stock in the North of Spain in order to enable fast deliveries to Distrelec, which is a trading brand of RS Group.

150mm and 200mm SiC Wafer Supply Secured
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Learn more:
infineon.com
  • Industry News
  • 2024-01-23

Infineon Technologies and Wolfspeed announced the expansion and extension of their existing long-term 150mm silicon carbide wafer supply agreement, originally signed in February 2018. The extended partnership includes a multi-year capacity reservation agreement. It contributes to Infineon's general supply chain stability, also with regard to the growing demand for silicon carbide semiconductor products for automotive, solar and EV applications and energy storage systems. "As the demand for silicon carbide devices continues to increase, we are following a multi-source strategy to secure access to a high-quality, global and long-term supply base of 150mm and 200mm SiC wafers," said Jochen Hanebeck, CEO of Infineon Technologies. Furthermore, Infineon has formalized an agreement with silicon carbide supplier SK Siltron CSS earlier this year. Under the agreement, SK Siltron CSS will provide Infineon with competitive and high-quality 150-millimeter SiC wafers, supporting the production of SiC semiconductors. In a subsequent phase, SK Siltron CSS will play an important role in assisting Infineon's transition to a 200-millimeter wafer diameter. SK Siltron CSS partners with global semiconductor manufacturers by supplying compound semiconductor wafer solutions. SK Siltron CSS is a subsidiary of South Korea-based SK Siltron, a part of the SK Group.

Power Semiconductor Modules for EVs and PHEVs
  • Product Release
  • 2024-01-23

Mitsubishi Electric Corporation announced the coming release of six J3-Series power semiconductor modules for various electric vehicles (xEV), featuring either a silicon carbide metal-oxide semiconductor field-effect transistor (SiC-MOSFET) or a RC-IGBT (Si), with compact designs and scalability for use in the inverters of EVs and PHEVs. All six J3-Series products will be available for sample shipments by the end of this quarter. In the xEV sector, power semiconductor modules are used widely in power conversion devices such as inverters for xEV drive motors. In addition to extending the cruising range of xEVs, compact, high-power, high-efficiency modules are needed to further downsize batteries and inverters. But due to the high safety standards set for xEVs, power semiconductors used in drive motors must be more reliable than those used in general industrial applications. Development of these SiC products was partially supported by Japan's New Energy and Industrial Technology Development Organization (NEDO).

Head of Asia Operations
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Learn more:
schurter.com
  • People
  • 2024-01-17

Guanghua Yang is the new Managing Director Asia & Vice President at SCHURTER, responsible for all activities of SCHURTER in Asia, including Sales, Marketing, Operations and R&D. Guanghua Yang has more than 30 years of experience, most of which he gained in technology companies in the field of electronic components. Prior to his appointment as Managing Director Asia & Vice President in the SCHURTER Group, he was General Manager & Vice President for Asia at C&K based in Shanghai, China. Earlier, he held other executive positions in sales and marketing. He holds a Bachelor of Science degree and an MBA degree from Tsinghua University.

AC/DC Frontend Modules with PFC
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Learn more:
gaia-converter.com
  • Product Release
  • 2024-01-17

GAIA Converter's AC/DC Power-Factor Corrected front-end modules are compatible with common airborne AC input bus voltages and variable frequencies, while being particularly suited for use in centralized power architectures in conjunction with PoL or isolated DC modules. All of the modules meet the stringent requirements of DO-160, ABD-100, and Mil-Std-704 specifications. GAIA's AC/DC front-end modules have a soft-start, active current limitation, short circuit protection, and inhibit function. The soft-start/active current limitation prevents inrush current during start-up. The short circuit protection safeguards the module against short circuits by shutting down and restoring to normal when the overload is removed. The front end series operates under 50W with two isolated low voltage outputs. Series above 150W provide non-isolated high voltage output.

MIL-COTS DC/DC Front-End Filters
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Learn more:
pduke.com
  • Product Release
  • 2024-01-17

P-DUKE has developed the MCF series of MIL-COTS DC/DC front-end filters, meeting the requirements of MIL-STD 1275E (28V DC electrical systems in military vehicles) and MIL-STD 461 (electromagnetic interference control for subsystems and equipment). These filters accept 9-36VDC input voltage, making them suitable for with 28V or 24V bus systems offering up to 250W output power. The devices are also applicable to heavy industrial and rolling stock applications. The MCF series features active input over-voltage protection, clamping over-voltages for up to 50ms to a safe level of 40V, and absorbing +/-250V spikes. With additional MLCCs, the internal EMI filter meets MIL-STD 461G limits. It also includes various active protection functions for advanced protection of the DC/DC converter module. The MCF filter module is fully integrated also meet environmental MIL-STD 810F specifications for shock and vibration and have an operating temperature range of -40°C to 105°C (optionally -55°C).

Automation1 XA4 1- or 2-Axis PWM Servo Drive
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Learn more:
aerotech.com
  • Product Release
  • 2024-01-16

For precision motion control in industrial and research systems Aerotech introduced the XA4 1- or 2-Axis HyperWire Multi-Axis PWM Servo Drives. These dual- and single-axis drives enable machine builders to experience Automation1 precision on all of their systems. The simplified dual-axis XA4 brings control to multiple axes of motion in the same machine footprint. Built on Automation1 motion control technology, the XA4 communicates to Automation1 PC- and drive-based controller products over the HyperWire motion bus, supports multiple feedback device types and includes on-board memory. The amplifiers control brushless AC, brush DC, voice coil and stepper motor types at up to 340VDC operating voltage and 20A peak current capability.

MOSFET Relays Extend Capacity and Operating Temperature
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Learn more:
omron.com
  • Product Release
  • 2024-01-16

Omron Electronic Components has expanded its MOSFET relay line-up to offer higher operating temperature and enhanced capacity in a high-current six-pin DIP format. Omron's G3VM-63BR and G3VM-63ER extend the company's 60V DIP6 MOSFET relay range up to 0.7A continuous load current. Operating from -40 to 110 deg C, these MOSFET relays contribute to much smaller and denser equipment than equivalent mechanical devices. Power consumption on the input is lower compared to all electromechanical relays, but especially reed relays, further contributing to energy-saving equipment. Maximum resistance with output ON is typically 0.3Ω (0.1Ω. with connection C), whilst typical capacitance between output terminals is specified as 520pF. Their maximum trigger LED forward current is 2mA, whilst turn ON time and OFF times are 2ms and 3ms respectively. For factory automation applications, the models have NC contacts allowing status output to linked devices including power OFF status. The relays can also be used alongside the NO contact type, enabling switching control of multiple loads with just one input control. Applications in factory automation include PLCs machine tools, inverters, robot controllers, temperature control together with fire, gas or smoke alarm systems. Further uses for the G3VM-63ER extend to sensor signal transfer and output signal switching - for example with gas detection and similar alarm applications.

Addition to the Line Card: Rugged Connectors
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Learn more:
avnet.com
  • Industry News
  • 2024-01-16

Avnet Abacus will be selling the portfolio of rugged DEUTSCH connectors from TE Connectivity. The DEUTSCH family of environmentally sealed electrical connectors has been a solution for industrial and commercial vehicles and other applications for more than 40 years, especially where dirt, moisture, salt spray and vibration can otherwise contaminate or damage electrical connections. It includes the HD and DT ranges of robust-circular and rugged-rectangular connectors, respectively, especially designed for industrial and commercial vehicle applications.

Automotive Step-down Switching Regulators save Board Space
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Learn more:
ablic.com
  • Product Release
  • 2024-01-16

ABLIC now offers the S-19954/5 Series of automotive step-down switching regulators operating at 5.5V with a 1A output and housed in HSNT-8(1616)B packages (1.6 x 1.6 x t0.41mm3). The device enables an efficiency of up to 95% when delivering an output current of 1A at output voltages of 0.8 to 3.3V from an input voltage between 2.7 and 5.5V. In addition, while the circuit configuration of conventional switching regulators required five or more external components, the S-19954/5 Series has an integrated feedback resistance circuit and phase compensation circuit to set the output voltage, which makes it possible to configure an application circuit using just one small coil and two capacitors. These characteristics allow the S-19954/5 Series to result in a 45% reduction compared to conventional products. The S-19954/5 Series is also equipped with a power good function for output voltage monitoring. Furthermore, the S-19954/5 Series is also PPAP (Production Part Approval Process) capable and planned for compliance with Grade 1 of the AEC-Q100 quality standard for automotive ICs. Typical applications are secondary power supplies for automotive devices as well as camera modules and other automotive applications.

R&D Manager at Swedish GaN-on-SiC Semiconduductor Manufacturer
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Learn more:
swegan.se
  • People
  • 2024-01-16

Anders Lundskog is the new R&D manager at SweGaN, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers. Anders Lundskog has a background in process development for GaN materials at Infineon and system engineering from Saab, He holds a Doctor of Philosophy (Ph.D.), Materials Science, and Master of Science (MSc), Applied Physics and Electrical Engineering, from Linköping University of Technology. Spurred by significant interest in volume orders from major customers, in 2023 SweGaN announced the construction of a new production facility in Linköping Sweden to embrace global demand - with prognosis for production is Q1 2024. SweGaN's strategy is closely aligned with the accelerated global demands for GaN-on-SiC epiwafers used in 5G telecommunications infrastructure, defense radars, satellite communications and high voltage power switches.

Partnership in Power Products
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Learn more:
acalbfi.com
  • Industry News
  • 2024-01-13

Acal BFi now partners with Delta Electronics. The collaboration between Acal BFi and Delta Electronics combines their expertise and resources for providing solutions to develop power optimised applications, reduce costs, and achieve sustainable solutions. Delta Electronics core competence is in high-efficiency power electronics. Under this partnership, Acal BFi and Delta Electronics will leverage their respective strengths and capabilities to offer customers a suite of power technology solutions along with industry knowledge, and the ability to deliver tailor-made solutions in areas such as renewable energy, factory automation, machine automation, medical equipment.

Overtemperature Detection Solution for EV Li-ion Battery Packs
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Learn more:
littelfuse.com
  • Product Release
  • 2024-01-11

With its TTape™ solution Littelfuse introduces an overtemperature detection platform designed to transform the management of Li-ion battery systems. TTape helps vehicle systems manage premature cell aging effectively while reducing the risks associated with thermal runaway incidents. It is well-suited for a wide range of applications, including automotive EV/HEVs, commercial vehicles, and Energy Storage Systems (ESS). Its distributed temperature monitoring capabilities enable detection of localized cell overheating, thereby improving battery life and enhancing the safety of battery installations. With a single TTape device, multiple cells can be monitored, thus alerting the BMS sooner in case of overtemperature scenarios with a response time of less than one second. Calibration isn't necessary because TTape can directly integrate with existing BMS. The TTape Distributed Temperature Monitoring Platform is available in tape and reel or box packaging, depending on the length required.

Renesas to Acquire Transphorm: Expanding its Power Portfolio with GaN Technology
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Learn more:
renesas.com
  • Industry News
  • 2024-01-11

Renesas Electronics and Transphorm announced that they have entered into a definitive agreement pursuant to which a subsidiary of Renesas will acquire all outstanding shares of Transphorm's common stock. The transaction values Transphorm at approximately $339 million. The acquisition will provide Renesas with in-house GaN technology, which is described by Renesas to be "a key next-generation material for power semiconductors, expanding its reach into fast-growing markets such as EVs, computing (data centers, AI, infrastructure), renewable energy, industrial power conversion and fast chargers/adapters". Renesas claims that demand for GaN is predicted to grow by more than 50 percent annually. Renesas will implement Transphorm's auto-qualified GaN technology to develop new enhanced power solution offerings, such as X-in-1 powertrain solutions for EVs, along with computing, energy, industrial and consumer applications. The board of directors of Transphorm has unanimously approved the definitive agreement with respect to the transaction and recommended that Transphorm stockholders adopt such definitive agreement and approve the merger. The transaction is expected to close in the second half of calendar year 2024, subject to Transphorm stockholder approval, required regulatory clearances and the satisfaction of other customary closing conditions. In other news Renesas had already announced the establishment of an in-house SiC production line, supported by a 10 year SiC wafer supply agreement.

APEC 2024 Provides Childcare During the Conference and Exhibition
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Learn more:
apec-conf.org
  • Event News
  • 2024-01-10

Onsite at APEC 2024, day-long childcare for children of attendees will be available during the conference and exhibition. In order to use these services attendees must sign up for them by Jan. 29, 2024. In order to do so the Applied Power Electronics Conference (APEC) has partnered with KiddieCorp which will provide on-site childcare services from 8:00 a.m. to 5:00 p.m., from Tuesday to Thursday (Feb. 27-29). Conveniently located at the Hyatt Regency, Long Beach, the services will enable APEC-registered parents to attend the conference and exhibition in the Long Beach Convention Center while their children are cared for next door. The KiddeCorp team is prepared to closely monitor and entertain kids aged 3-12 years with numerous activities designed to ensure they have age-appropriate fun. KiddieCorp employees are trained in first aid, CPR and emergency response preparedness, so parents can have peace of mind while navigating the exhibit floor, attending conference sessions or participating in the Spouse and Guest program events. "Providing childcare will encourage power electronics professionals to bring their families to APEC 2024 knowing their children will be cared for and entertained while they attend sessions and other activities," said Tim McDonald, APEC 2024 General Chair. "This service, combined with the Spouse and Guest Hospitality program offering excursions to Catalina and whale-watching, will provide a memorable experience in Long Beach for the entire family."

STMicroelectronics Announces new Organization
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Learn more:
st.com
  • Industry News
  • 2024-01-10

STMicroelectronics moves from three to two product groups, AMPS and MDRF. The Analog, Power & Discrete, MEMS and Sensors Group (APMS) will be led by Marco Cassis, ST President and member of the Executive Committee, and the Microcontrollers, Digital ICs and RF products group (MDRF) will be led by Remi El-Ouazzane, ST President and member of the Executive Committee. The APMS Product Group will include all ST analog products, including Smart Power solutions for automotive as well as all ST Power & Discrete product lines including Silicon Carbide products complemented by MEMS and Sensors. APMS will include two Reportable Segments: Analog products, MEMS and Sensors (AM&S); Power and discrete products (P&D). The MDRF Product Group will include all ST digital ICs and microcontrollers, including automotive microcontrollers but also RF, ADAS, Infotainment ICs. MDRF will include two Reportable Segments: Microcontrollers (MCU) as well as Digital ICs and RF Products (D&RF). Concurrent with this new organization Marco Monti, ST President of the former Automotive and Discrete Product Group, will leave the company. To complement the existing Sales & Marketing organization, a new application marketing organization by end market will be implemented across all ST Regions. This will provide ST customers with end-to-end system solutions based on the company's product and technology portfolio. The application marketing organization will cover the following four end markets: Automotive / Industrial Power and Energy / Industrial Automation, IoT and AI / Personal Electronics, Communication Equipment and Computer Peripherals. The current regional Sales & Marketing organization remains unchanged.

Acquisition of 1500 VDC Converter Technology and Team
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Learn more:
danfoss.com
  • Industry News
  • 2024-01-10

Danfoss Drives has announced the acquisition of the ACE300 product and the takeover of the product team from Finland-based company Ampner to extend the electrification portfolio with a dedicated 1500 VDC power converter. The product will be integrated within Danfoss Drives' portfolio of Electrification Solutions with primary focus on Smart Grids and energy storage. Mika Kulju, President of the Danfoss Drives business, says: "With 2030 climate targets becoming ever more imminent, decarbonization via electrification is accelerating in multiple sectors. There is a growing trend in all focus application areas where 1500 V DC is starting to play a key role. This is a big step for Danfoss Drives in ensuring a complete electrification offering, thus securing the right solutions for our customers in their electrification projects."

GaN FETs Enable 75 - 231 Ampere Laser Diode Control in Nanoseconds for Lidar
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Learn more:
epc-co.com
  • Product Release
  • 2024-01-09

EPC launches three laser driver boards dubbed EPC9179, EPC9181 and EPC9180 containing pulse current laser drivers of 75 A, 125 A, and 231 A, showcasing EPC's AEC-Q101-qualified GaN FETs. These FETs (EPC2252, EPC2204A, and EPC2218A) are 30% smaller and said to be more cost-effective than their predecessors. Designed for both long and short-range automotive lidar systems, these boards expedite solution evaluation with varied input and output options. All boards share identical functionality, differing only in peak current and pulse width. Utilizing a resonant discharge power stage, they employ a ground-referenced GaN FET driven by LMG1020 gate driver. The GaN FET's ultrafast switching enables rapid discharge of a charged capacitor through the load's stray inductance, enabling peak discharge currents of tens to hundreds of amps within nanoseconds. The PCB is designed to minimize power loops and common source inductance while offering mounting flexibility for laser diodes or alternative loads. To enhance user-friendliness, all boards ship with EPC9989 interposer PCBs, featuring various footprints to accommodate a variety of laser diodes or other loads. Customers can choose one that meets their needs to evaluate the GaN solutions. The EPC9179/81/80 boards are triggered from 3.3V logic or differential logic signals such as LVDS. For single-ended inputs, the boards can operate with input voltages down to 2.5V or 1.8V with a simple modification. EPC provides full schematics, BOM, PCB layout files and a quick start guide on its website.

Collaboration on Magnetic Components for Converters
  • Industry News
  • 2024-01-09

ITG Electronics has announced a collaboration with Renesas Electronics to develop a generation of magnetic components for 54V/48V to 12V converters. The effort specifically targets applications in the artificial intelligence (AI) and data center power conversion sectors. The collaboration's latest initiative involves 48V onboard power delivery solutions. The solutions – called Renesas P/N RAA228006/RAA226054 and ITG P/N SLA694719C-2R2MHF by the two companies – can deliver 1,000 W per phase. ITG P/N SLA694719C-2R2MHF is rated 0.65mOhm and achieves an elevated current rating of 42 A. Compared to conventional 750W transformers, ITG's enhanced version provides a 46% reduction in transformer DC resistance (DCR), resulting in substantially reduced overall power loss.

Professional Test & Measurement Solutions at APEC
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Learn more:
itechate.com
  • Industry News
  • 2024-01-09

APEC 2024 will be held in Long Beach, California on February 25-29, 2024. Professional power test solution provider-ITECH Electronics, will show on APEC 2024 with their power electronics testing instruments and solutions, we cordially invite you to stop by ITECH booth No.1659. ITECH will show all series of T&M instrument products. ITECH new upgraded AC source products such as IT7800, IT7900 and IT7900P will appear at the show, help you challenge MW level test. And you will see our star product IT6000C Bi-directional DC power supply, which adopts the third generation SiC-base technology and integrates the source and sink function in one unit. Also, we will show another explosive product IT-M series, featuring "compact structure" and "high power density", which give users a wide range of choices to meet the diverse testing demands. The IT2800 SMU, winner of three T&M awards in 2023, will also make its debut at APEC. ITECH has brought over 1000 models products to global market, always focusing on innovation, owning 140+ patents and products have been awarded by top international media. ITECH is always stepping forward with their state-of-the-art testing technology. Meet ITECH on APEC 2024!

EC-Q200 compliant Planar Signal BMS Transformer for High Voltage Applications
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Learn more:
bourns.com
  • Product Release
  • 2024-01-09

Meeting the need for planar technology that can provide reliable and safe communication in a growing group of high voltage electric vehicle (EV) and other high energy storage systems, Bourns' AEC-Q200 compliant SM91806 Planar Signal BMS Transformer meets basic electric insulation requirements per IEC 60664-1, IEC 61558-1 and IEC 62368-1 standards. Planar-style signal transformers have been introduced to increase design flexibility and robustness. They are also known to deliver cost efficiency and reliability advantages over conventional wire wound transformer designs due to their multilayer PCB isolation and full automation. Offering these benefits and more, Bourns' planar signal BMS transformer features a working voltage up to 1000 VDC, superior clearance/creepage distance features and complies with Overvoltage Category II. It also provides a partial discharge level up to 1200 V for ESS usage.

Industry Veteran now CEO
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Learn more:
q-p-t.com
  • People
  • 2024-01-08

QPT has appointed Rupert Baines as its CEO with effect from 1 April 2024. He is a veteran of the semiconductor industry with C-level roles including CEO of UltraSoC (sold to Siemens) and CMO of Codasip. QPT is active in developing next generation GaN-based motor drives.

Power Conversion Company buys Provider of Transformers, Inductors and PD Equipment
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Learn more:
astrodynetdi.com
  • Industry News
  • 2024-01-08

Astrodyne has acquired Powertronix, a provider of toroidal transformers, AC and DC inductors and power distribution equipment. Powertronix provides power transformers, specialty transformers, power solutions, and AC and DC inductors for highly demanding OEMs in the medical, industrial, and semiconductor fabrication equipment markets, worldwide. Powertronix is particularly adept at guiding customers through complex qualification processes and developing special solutions that meet the safety requirements of highly regulated applications, such as robotic-assisted surgery. Powertronix will remain headquartered in Foster City, California and will continue to use the Powertronix brand. The terms of the transaction were not disclosed.

650V Super Junction N-Channel MOSFETs
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Learn more:
centralsemi.com
  • Product Release
  • 2024-01-04

Central Semiconductor announces the introduction of several 650V Super Junction N-Channel MOSFETs designed for high-voltage, fast-switching applications. The latest additions, available in TO-220FP packaging, include the devices CDMSJ2204.7-650 (4.7A), CDMSJ2207.3-650 (7.3A), CDMSJ22010-650 (10A), CDMSJ22013.8-650 (13.8A) and CDMSJ22029-650 (29A). The Super Junction MOSFETs feature a die structure, which supports high-voltage with comparatively low on-resistance and fast switching speeds. The are claimed to provide low switching losses, innately high reliability die design, and increased power output in applications like electric vehicle inverter, and solar.

Developing a Wireless BMS Production Test Solution
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Learn more:
rohde-schwarz.com
  • Industry News
  • 2024-01-04

Rohde & Schwarz, together with ADI, has developed an ultra-compact automated test equipment (ATE) system for wireless battery management systems (wBMS). With this test setup, the necessary wBMS module calibration, receiver, transmitter and DC tests can be conducted fast and executed reliably for verification in the lab as well as for production tests for high yield. It consists of the R&S CMW100 radio communication tester, the R&S WMT wireless automated testing software framework, and the new R&S ExpressTSVP universal test and measurement platform. Due to radiated test, the device under test (DUT) is placed in an interference-free environment such as the R&S TS7124 RF shielded box. For RF robustness testing, Rohde &Schwarz and ADI worked together to get an off-the-air recording solution to capture real-world RF spectrum. They then played it back in the lab to confirm the correct operation of wBMS in demanding RF environments. This solution from Rohde & Schwarz allows a realistic, repeatable, and efficient verification of wireless devices. During several test drives in various complex RF environments, an R&S FSW signal and spectrum analyzer monitored the RF spectrum and sent it to an R&S IQW wideband I/Q data recorder. For playing back the recorded spectrum profiles in a lab, the R&S IQW is connected to an R&S SMW200A vector signal generator. From the development lab to the production line, Rohde & Schwarz offers a comprehensive portfolio of test solutions for wBMS.

FRD Super Junction MOSFETs with RDS(on) of 95 mOhm
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Learn more:
aosmd.com
  • Product Release
  • 2024-01-03

Alpha and Omega Semiconductor Limited (AOS) has released two aMOS5 600V FRD Super Junction MOSFETs. aMOS5 is AOS's high voltage MOSFET platform, designed to meet the high efficiency and high-density needs of servers, workstations, telecom rectifiers, solar Inverters, EV charging, motor drives and industrial power applications. The design of today's mid-high power switched-mode power supply (SMPS) and solar inverter systems boil down to four major challenges: higher efficiency, higher density, lower system costs, and uncompromised robustness. High Voltage Super Junction MOSFETs are well-suited for topologies such as single/interleaved/dual boost/CrCM TP PFCs, LLC, PSFB, multi-level NPC/ANPC and so forth. aMOS5 is a High Voltage Super Junction solution tailored for fast switching, ease-of-use and robustness in mission-critical applications. aMOS5 FRD FETs are engineered with an intrinsic body diode to handle hard commutation scenarios, when the freewheeling body diode is in reverse recovery due to abnormal operations, such as short-circuit or start-up transients. The two products released, the AOK095A60FD (TO-247) and AOTF125A60FDL (TO-220F), are 600V FRD FETs with 95mOhm and 125mOhm maximum RDS(on), respectively. In tests conducted by AOS engineers the body diodes of these two FRD FETs have survived high di/dt under abnormal system conditions, even at elevated junction temperatures of up to 150°C. Additionally, AOS tests have shown that these devices' operate with a noticeably lower turn-off energy (Eoff) than standard solutions, which contributes to higher efficiency in light or mid-load conditions.

Michael Sleven Appointed Vice President Sales Europe
  • People
  • 2023-12-21

Sanan Semiconductor has announced a major step towards strengthening its position in innovative, high-quality solutions with wide bandgap semiconductor materials with the appointment of renowned power electronic engineer Michael Sleven as Vice President Sales Europe. Anticipating significant growth in the European market, Sanan Semiconductor has chosen to boost its top management team with the recruitment of a specialist in the power electronics community who has over 25 years' experience in the sector in various management positions. Michael joins the company after his time with LEM Europe GmbH as Managing Director and Head of Sales. Before that, Michael was responsible for business development and sales for power semiconductors (based on Silicon IGBTs and SiC MOSFETs) at Hitachi Europe. The main market sector here was automotive and industry applications in Europe. Michael also spent more than a decade at Infineon AG in a number of key positions, including Head of R&D High Power Semiconductor Module Development. The appointment comes at a time when Sanan Semiconductor is undertaking a recruitment drive in its SiC and GaN team in Europe with over 10 positions available. The company is looking for sales managers, field application engineers, R&D engineers and customer service team member. The recruits will also support the development of innovative wide bandgap semiconductors that meet the increasing electrification needs of the automotive industry, as well as power conversion in green energy applications. 

 eFuses Feature Continuous Current up to 100 A
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Learn more:
digikey.de
  • Product Release
  • 2023-12-20

DigiKey announced that the EFUSE-48V100A reference design product from Vishay is now available for purchase globally from DigiKey. The Vishay eFuse features TrenchFET MOSFETs and is designed to handle continuous current up to 100 amps. It can operate continuously at maximum current with less than 14 watts of losses without requiring active cooling. The eFuse also features a pre-charge function, continuous current monitoring and overcurrent protection. "The eFuse concept is an innovative trend that protects both the user and the hardware in high power applications, and we're excited to partner with Vishay to launch this new product," said Mike Slater, vice president of global business development at DigiKey. "With the steady increase in 48-volt eMobility applications, semiconductor-based resettable fuses like the EFUSE-48V100A are ideal for replacing mechanical relays, contactors and non-resettable fuses." In addition to safely connecting and disconnecting to 48-volt power sources like high-energy battery packs, the EFUSE-48V100A also features fast disconnect of loads in under 2 micro-seconds, a resettable fuse and an adjustable current limit. It is designed to work in battery management systems, EV test environments, solar installations, industry and home automation, industrial and server computing, networking, telecom and base station power supplies.

DC/DC Converter for Railway Applications
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Learn more:
recom-power.com
  • Product Release
  • 2023-12-20

With a fully regulated single output (24V or others, e.g. 110V), each product of the RMD150 and RMD300 series from Recom has an input range of 16.8V to 137V continuous and 14.4V to 154V short term, which means that it is suited for all common global railway nominals. Both parts are typically 94% efficient (peak >95%). Both series are integrated in metal cases rated IP-20 for chassis-mounting with natural convection in any mounting position. The parts operate from -40°C to +70°C continuously and up to 85°C for 15 minutes at full without derating power. This meets the rail operating temperature Class OT4 and extended Classes ST1 and ST2. Coming soon, an '-E' version extends the startup temperature down to -50°C. Certifications/compliance include rail standard EN 50155, EMC standards EN 50121-3-2 and IEC/EN 61000-4-2,3,4,5, EN 50124-1 for insulation coordination and EN 45545-2 hazard level HL1-HL3 for railway fire safety. The parts also hold certification to IEC/EC 62368-1 for non-rail applications. Isolation is 3.5kVAC/5kVDC, reinforced grade. The products are designed for Over-Voltage Category III (OVC III) environments up to 2000m altitude and OVCII to 5000m. The parts comply with environmental standards including EN 60068 for temperature testing and EN 61373 for life, shock and vibration in Class B body-mount applications. An internal OR-ing diode is included, allowing the RMD150 and RMD300 to be paralleled for increased power or redundancy or battery charging. Control and monitoring features include e.g. remote ON/OFF, current share pin and output trim.

Portfolio of Space-Screened GaN HEMTs
  • Product Release
  • 2023-12-20

Teledyne e2v HiRel announces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron mobility transistors (GaN HEMTs). The parts go through NASA Level 1 or ESA Class 1 screening flow and can be brought up to full Level 1 conformance with extra qualification testing if desired. Typical applications include battery management, dc-dc converters, and space motor drives. Two 100 V parts are available with both bottom-side and top-side cooled packaging. One 650 V 30 A GaN-on-Silicon power transistor is available in a bottom-side cooled package. Each device is available with options for EAR99 or European sourcing. Teledyne e2v HiRel's GaN HEMTs feature single wafer lot traceability, extended temperature performance from -55 to +125°C, and low inductance, low thermal resistance packaging.
"Our customers have embraced the previous release of 650 V space screened devices, and we have expanded our portfolio to provide additional options. These GaN HEMT products save customers time and money by providing standard devices without the need for additional screening." said Mont Taylor, VP of Business Development for Teledyne e2v HiRel. "Our expanded catalog with standard burn-in make it easy for designers to utilize the latest in GaN in their designs."

Opening Ceremony and Investor Day at Torrance HQ
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Learn more:
navitassemi.com
  • Industry News
  • 2023-12-19

Navitas Semiconductor held an Opening Ceremony and 2023 Investor Day at its new headquarters in Torrance, CA on Tuesday, December 12th. Torrance Mayor, George Chen, and Dustin McDonald from the Office of the Governor of California joined Navitas' CEO and co-founder Gene Sheridan to speak and cut the ribbon, officially opening Navitas' headquarters. Around 100 Navitas staff are employed in Torrance for all aspects of GaN and SiC design, applications, test, characterization and quality plus finance, marketing and HR. Further team growth is planned for 2024, including a $20M investment to add SiC epi-growth capability for strategic manufacturing expansion. The investor meeting began with Mr. Sheridan's recap on a year of significant growth for Navitas, with a doubling of revenue, a $92M capital raise, four major new technology platforms and an update on Navitas' mission to 'Electrify Our World™'. Then, Mr. Sheridan outlined a $1.3T electrification market opportunity as GaN and SiC enable and accelerate our transition away from fossil fuels to a carbon-neutral, full-electrified world, envisaged as 'Planet Navitas'.
Dan Kinzer, co-founder and COO/CTO then introduced technology platforms including Gen-4 GaNSense half-bridges for motor drive and mobile fast chargers, GaNSafe – a protected GaN powertrain, GaNSense Control, and a bi-directional GaN power IC platform with up to 9x smaller chip size than legacy silicon MOSFETs or IGBTs. Sid Sundaresan, SVP for the GeneSiC product line added more detail on the Gen-3 Fast SiC platform.

Donation for Educational Initiative
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Learn more:
vincotech.com
  • Industry News
  • 2023-12-18

Vincotech is carrying on its holiday tradition of donating to a good cause in lieu of sending gifts to customers. The company's partner in philanthropy, Plan International Germany, is to receive a €12,000 grant from Vincotech on behalf of its workforce and customers. The money will fund a drive to further girls' education in Malawi.
This Plan International Germany project addresses the educational challenges faced by young people in Malawi, particularly girls in impoverished rural areas. Much of Malawi's population – 70 percent – lives below the poverty line. With traditional role models still holding sway, just 21 percent of girls finish secondary school. Plan International Germany aims to boost attendance and graduation rates by providing scholarships, improving sanitary facilities, and creating a mentoring program to guide and support girls on their way through school.
"Educating underprivileged girls is a catalyst for positive change, individual empowerment, community development, and societal progress. A good education has far-reaching benefits that extend beyond the individual, impacting families, communities, and entire nations," says Vincotech CEO Eckart Seitter. "By taking part in a project to provide financial assistance, improve schools, and mentor kids, we hope to afford girls in Malawi better opportunities and a brighter future."

Synchronous 34V Input Buck Switching Regulator Controller
  • Product Release
  • 2023-12-18

Nisshinbo Micro Devices has launched the NC2780AK series switching regulators intended for consumer, industrial and automotive applications. The NC2780AK has an input voltage range from 4.0 to 34V and an externally adjustable output voltage from 0.7 to 5.3V. An additional external high-side and low-side N-Channel MOSFET and some passive components are required to complete the buck switching regulator controller. The oscillator frequency is adjustable from 250kHz to 1MHz using an external resistor, or it can be synchronised with an external clock to minimise common noise issues when using multiple switching regulators in the power supply. The phase compensation can also be adapted through an external resistor and capacitor to ensure stable and reliable operation. Furthermore, the NC2780AK is able to switch automatically from PWM into PFM mode but can be set in a manually fixed PWM mode as well. Built-in safety features include a thermal shutdown mechanism, over- and under-voltage detection circuits. A UVLO feature ensures that the regulator operates within a specified voltage range. The NC270xMA series offers an adjustable soft-start function. An optional function is the Spread Spectrum Clock Generator (SSCG), which intentionally modulates the clock frequency signal for EMC control.

Nanocrystalline Soft Magnetic Materials Tested in the OBC
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Learn more:
innolectric.ag
  • Industry News
  • 2023-12-14

As part of a joint international research project with CBMM, innolectric has published a study on increasing the efficiency of charging components using nanocrystalline magnetic materials. Innovative soft magnetic cores with niobium were analyzed in direct application in the innolectric On-Board Charger. The results of the study are now available. Felix Burmeister, system engineer responsible for the project at innolectric, was already confident during the tests in the in-house laboratory: "Whether on land or water – our customers already cover a very wide range of different vehicles and fields of application. We want to offer them a product that offers great added value across its many properties. We are delighted to have gained a partner with a large network in CBMM, with whom we can take our technology a decisive step forward. We are excited to see what new ways of optimization the new magnetic materials will enable, first in our laboratory and later in the field!" The results of the study show that innolectric is able to successfully reduce the size and weight of the common mode chokes (CMC) for use in their On-Board Charger by using nanocrystalline materials. This also represents a major step for the further development of charging components in the innolectric portfolio. One of the key findings is that, despite a significant reduction in core volume of more than 50 % and minimization of weight by over 60 %, there was no loss of efficiency or electromagnetic compatibility. In a direct comparison with conventional ferrite-based magnets, the nanocrystalline material therefore performs significantly better when used in the field of electromobility.
Visit https://innolectric.ag/research-project-on-innovative-magnetic-materials/?lang=en to get to the white paper.

APEC 2024 Plenary Session Features Renowned Industry Experts
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Learn more:
apec-conf.org
  • Event News
  • 2023-12-14

The annual Applied Power Electronics Conference will mark its 2024 event with an opening Plenary Session on Monday afternoon, February 26. The four-hour session will consist of six presentations delivered by visionaries representing industry and academia addressing topics of interest and concern to engineers engaged in applied power electronics technology. The following is lineup of Plenary Session presenters and their topics:
-"Surgical Energy: Connecting Power Electronics to Patients – Literally!" by Daniel Friedrichs, Senior Principal Engineer, Minnetronix Medical
-"Opportunities, Progress and Challenges in High-Frequency Power Conversion" by David Perreault, Ford Professor of Engineering, Massachusetts Institute of Technology
-"Innovating for Sustainability and Profitability: How Innovations in Efficiency Enable us to do Good for the Environment While Doing Well as a Business" by Balu Balakrishnan, Chairman and CEO, Power Integrations
-"The Drive for Silicon Carbide – A Look Back and the Road Ahead" by Gregg Lowe, CEO, Wolfspeed
-"Fusion Energy is Coming: The Key Role of Power Electronics to Commercial Fusion" by AJ Kantor, Chief of Staff and Matthew C. Thompson, Vice President of Systems Engineering, Zap Energy
-"The Future of AI Requires Efficient Power Delivery inside the Processor" by Francesco Carobalante, Director Corporate Strategy & Ventures, Intel Corporation
The APEC 2024 conference and exposition, running February 25-29 at the Long Beach California Convention Center, continues its long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer.

Time-of-Flight Sensor Boosts Ranging Performance and Power Saving
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Learn more:
st.com
  • Product Release
  • 2023-12-14

STMicroelectronics' VL53L8CX, the latest-generation 8×8 multizone time-of-flight (ToF) ranging sensor, delivers a range of improvements including greater ambient-light immunity, lower power consumption, and enhanced optics. ST's direct-ToF sensors combine a 940nm vertical cavity surface emitting laser (VCSEL), a multizone SPAD (single-photon avalanche diode) detector array, and an optical system comprising filters and diffractive optical elements (DOE) in an all-in-one module that outperforms conventional micro lenses typically used with similar alternative sensors. The sensor projects a wide square field of view of 45° x 45° (65° diagonal) and receives reflected light to calculate the distance of objects up to 400cm away, across 64 independent zones, and up to 30 captures per second. The VL53L8CX boosts ranging performance with a new-generation VCSEL and advanced silicon-based meta-optics. Compared with the current VL53L5CX, the enhancements increase immunity to interference from ambient light, extending the sensor's maximum range in daylight from 170cm to 285cm and reducing power consumption from 4.5mW to 1.6mW in low-power mode.

CMOS-Compatible 200mm Process Technology
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Learn more:
leti-cea.com
  • Industry News
  • 2023-12-14

CEA-Leti has developed a 200mm gallium nitride/silicon (GaN/Si) process technology compatible with CMOS cleanrooms that preserves the high performance of the semiconductor material and costs less than existing GaN/SiC technology. In one of nine presentations at IEDM 2023, the institute said that current GaN high-electron-mobility-transistor (HEMT) technologies used in telecom or radar applications come on small GaN/SiC substrates and require processing in dedicated cleanrooms. The SiC substrates used to grow GaN layers are very expensive and available only in relatively small size. This R&D project developed GaN/silicon technology (GaN/Si) on 200mm and later for 300mm wafer diameters in CMOS-compatible cleanrooms to reduce substrate cost and benefit from existing high-performance cleanroom facilities. As a result, CEA-Leti's GaN/Si technology performance at 28 GHz is gaining ground on GaN/SiC technology in terms of power density. "Our goal was to reach existing state-of-the-art GaN HEMT performance at ~30 GHz with a 200mm CMOS- compatible GaN/Si technology and to compete with GaN/SiC technology," said Erwan Morvan, CEA-Leti scientist and lead author of the paper, "6.6W/mm 200mm CMOS Compatible AlN/GaN/Si MIS-HEMT with In-Situ SiN Gate Dielectric and Low Temperature Ohmic Contacts". "This work demonstrates that CMOS-compatible 200mm SiN/AlN/GaN MIS-HEMT on silicon technology is a promising candidate for applications like 5G/6G infrastructure, satcom, radar for UAV detection or earth observation. It should enable less expensive devices while keeping high power density, high efficiency, light weight and compactness," he said.

POWER2GO – Powerbank thought BIG
  • Product Release
  • 2023-12-13

POWER2GO is basically a maxi version of a power bank offered by BMZ Group. It offers independence from the power grid, both in the event of a power failure and far away from the nearest power socket. Weighing 23kg and measuring 452 x 373 x 192 mm, the portable energy storage unit offers a constant, long-term power output of 2,500W and can even operate devices with peak outputs of up to 5,700W without any problems. The energy density of the 2.5kWh power storage device is specified with 125Wh/kg and the protection class is according to IP 65, which certifies that the device is dust-proof and waterproof, and the fact that it does not require a fan and therefore operates absolutely quietly. POWER2GO will be launched in two versions: POWER2GO LIFE addresses discerning users and, in addition to the earthed socket, offers additional connections (10W USB A, 100W USB C and 120W/12 V on-board power socket), a display and a light while POWER2GO WORK is intended for use in demanding work environments. With the same performance features, the focus here is on robustness and ease of use. The tubular frame around the housing provides the device with special protection. The POWER2GO beats a conventional ICE-based generator not only in terms of size and weight. POWER2GO is quiet and emission-free.

1200V SiC MOSFET Power Modules in Half-Bridge Packages
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Learn more:
semiq.com
  • Product Release
  • 2023-12-13

SemiQ Inc has expanded its QSiC power modules range with the introduction of a series of 1200V SiC power MOSFETs in half-bridge packages. Featuring a breakdown voltage of more than 1400V the QSiC modules support high-temperature operation up to Tj = 175°C. In addition, the modules are claimed to "exhibit industry-leading gate oxide stability and long gate oxide lifetime, avalanche unclamped inductive switching (UIS) ruggedness and long short-circuit withstand time". With a solid foundation of high-performance ceramics, the SiC modules are suitable for EV charging, on-board chargers (OBCs), DC/DC converters, E-compressors, fuel cell converters, medical power supplies, photovoltaic inverters, energy storage systems, solar and wind energy systems, data center power supplies, UPS/PFC circuits, Vienna rectifiers and other automotive and industrial applications. To ensure that each module has a stable gate threshold voltage and high-quality gate oxide, SemiQ's modules undergo gate burn-in testing at the wafer level. Besides the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) allow achieving the required automotive and industrial grade quality levels. The devices also have extended short-circuit ratings. All modules have undergone testing exceeding 1350V. These 1200V SiC MOSFET operate with an RDS(on) of 5mΩ, 10mΩ, and 20mΩ with current ratings of 383A (B3), 214A (B2) or 173A (B3) and 102A (B2).

160 V 2-Channel Gate Driver ICs for Battery-Powered Applications
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Learn more:
infineon.com
  • Product Release
  • 2023-12-13

Infineon Technologies announced the expansion of its MOTIX™ family of products for automotive and industrial motor control applications. To further expand the advanced product family, Infineon introduces the 2-channel MOTIX gate driver ICs 2ED2742S01G, 2ED2732S01G, 2ED2748S01G, and 2ED2738S01G. The 160 V Silicon-on-Insulator (SOI) gate drivers are small, powerful, and cost-effective gate drive solutions with latch-up immunity. They are designed for battery powered applications, including cordless power tools, multicopters, drones, and light electric vehicles with batteries up to 120 V. Infineon's SOI technology eliminates the parasitic thyristor structure and provides excellent robustness and immunity to negative transient voltages at the VS pin. The 2-channel gate drivers have integrated monolithic bootstrap diodes that supply the high-side bootstrap capacitor externally, further reducing system-level BOM costs. The devices come in a compact 3 x 3 mm2 VSON10 package and are available in both half-bridge (HB) and high-side + low-side (HS + LS) configurations as well as two different source/sink currents to drive n-channel MOSFETs in various applications.
The 2ED2732S01G and the 2ED2742S01G deliver a source current of 1 A and a sink current of 2 A, while the 2ED2738S01G and the 2ED2748S01G deliver a source current of 4 A and a sink current of 8 A. All products feature independent undervoltage lockout (UVLO) on both V CC and V B pins – the HB products also integrate shoot-through protection (STP). In addition, the MOTIX 160 V solutions are fully qualified for industrial applications according to the relevant JEDEC78/20/22 tests.

Top Management of the SCHURTER Group
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Learn more:
schurter.com
  • People
  • 2023-12-13

Lars Brickenkamp has taken over the position of CEO of SCHURTER Holding AG and has been steering the fortunes of the SCHURTER Group since December 1, 2023. Lars Brickenkamp holds a degree in electrical engineering and has years of experience in leading positions in the electronics industry. His proven track record and expertise predestine him to lead SCHURTER into a promising future. Lars Brickenkamp's last place of work was in Hong Kong.

Strengthening the Scandinavian Presence
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Learn more:
we-online.com
  • Industry News
  • 2023-12-13

With the establishment of Würth Elektronik Danmark A/S, customers from Denmark, Greenland and the Faroe Islands now have a direct point of contact for their electronic and electromechanical component needs. Previously, these markets were also served by the Swedish subsidiary. Würth Elektronik Danmark A/S is based in the north of Aarhus. A team headed by CEO Ole Sanggaard Knudsen, Finance Manager Gunhild Nors and Office Manager Claire Boelstoft is being set up there to provide even better support for the Danish electronics industry. "We would like to thank our colleagues in Germany and Sweden for their support in establishing our company," says Knudsen. "The fact that we can take this step comes from the trust our Danish customers have placed in us. Würth Elektronik is established here as a brand and now also as a company."

eBook about EV and Connected Transportation
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Learn more:
te.mouser.com
  • Product Release
  • 2023-12-12

Together with TE Connectivity Mouser Electronics has released an eBook exploring EVs and the rapidly evolving landscape of connected transportation. The book includes e. g. charging inlets for commercial and industrial vehicles, enabling safe, fast, and secure charging of up to 10,000 mating cycles while charging at 250VAC (at 32A) and 1000VDC (at 200A) for use with heavy and medium-duty trucks, buses, two-wheelers, agriculture, construction, and recreational vehicles. The eBook also comprises PowerTube connectors for high-power applications in hybrid and electric industrial and commercial vehicles. The ECPx50B high voltage contactors are built for handling large electrical loads, up to 580A continuous current, depending on wire size and temperature, and offer 1000 V switching voltage of up to 1500VDC with a continuous carry current of up to 500A. These contactors are designed for control in high-voltage environments such as battery energy storage systems, solar inverters, and EV charging applications. Furthermore, this eBook highlights emerging engineering topics such as V2X ecosystems, fleet telematics with 5G, the future of high-powered EV charging and other design trends providing insights into the EV and connected transportation eMobility revolution. The book describes the EV evolution from transportation modes to dynamic data hubs, as the rise of fleet telematics and the integration of 5G turn vehicles into roaming data centres including a deep dive into the emerging V2X communication standards for the next generation of EVs.

AC-DC Power Supplies for Industrial, IoT, and EV Applications
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Learn more:
cui.com
  • Product Release
  • 2023-12-12

CUI announced the addition of three, chassis mount ac-dc power supplies housed in compact metal cases with the VGS-500, VGS-350D, and VGS-200E series line of products. The ultra-slim designs make the power supplies appropriate for industrial and IoT use in harsh environments for inductive load applications such as motors, relays, and contactors. The power supplies are also well suited for the growing deployment of electric vehicle charges. With universal input voltage 85-305 VAC or 120-430 VDC and a wide operating temperature (-40 C to +85 C), the products from CUI, exceed competitors in the space both in voltage and temperature range. The VGS-200E also has a better MTBF rating over competing products, up to 300,000 hours. All products feature bottom and side installation and are certified to the EN 62368 safety standard with an operating altitude of up to 5,000m.

Gate Drivers for 62 mm SiC and IGBT Modules
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Learn more:
power.com
  • Product Release
  • 2023-12-12

Power Integrations announced a family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation. SCALETM-2 2SP0230T2x0 dual-channel gate drivers deploy short-circuit protection in less than two microseconds, protecting the compact SiC MOSFETs against damaging over-currents. The drivers also include advanced active clamping (AAC) to protect the switches against over-voltage during turn-off, enabling higher DC link operating voltages.
Thorsten Schmidt, product marketing manager at Power Integrations, commented: "The 2SP0230T2x0 gate drivers are flexible; the same hardware can be used to drive either SiC MOSFET or IGBT modules. This reduces both system design and sourcing challenges, and the plug-and-play approach speeds development."
Ideal for applications such as railway auxiliary converters, offboard EV chargers and STATic synchronous COMpensator (STATCOM) voltage regulators for the power grid, 2SP0230T2x0 gate drivers are based on Power Integrations' proven SCALE-2 technology, resulting in higher levels of integration, smaller size, more functionality and enhanced system reliability. Power Integrations' compact 134 x 62 mm 2SP0230T2x0 provides reinforced isolation at 1700 V, enabling use for up to 1700 V operation; this is 500 V higher than conventional drivers, which are typically limited to 1200 V.

High-Power Centre of Excellence in UK to accelerate Electrification and Sustainability
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Learn more:
einfochips.com
  • Industry News
  • 2023-12-12

Arrow Electronics and its engineering services company, eInfochips, have announced the establishment of a High-Power Centre of Excellence (CoE) in Swindon, United Kingdom. The purpose of this High-Power CoE is to assist customers in the development of high-power solutions, a critical component in advancing electrification and sustainability initiatives. The CoE will address the complexities associated with high-power electronics design, including lack of power expertise, stringent functional safety and reliability requirements, intricate PCB layout, and the necessity for costly testing equipment. Therefore the CoE is equipped with a high-power lab in Swindon and an experienced engineering team from eInfochips. The goal is to empower innovators to navigate the complexities of high-power electronics design effectively. The High-Power CoE will design products for all customers of Arrow and its subsidiaries, such as Richardson RFPD.

One of the Most Sustainable Companies Globally
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Learn more:
infineon.com
  • Industry News
  • 2023-12-11

Infineon Technologies has once again been included in the Dow Jones Sustainability World Index, as announced by S&P Global last Friday in New York, USA. "We are proud that Infineon has been chosen as one of the world's most sustainable companies for the 14th consecutive year", said Elke Reichart, Member of the Board and Chief Digital Transformation Officer, responsible for Sustainability at Infineon. "Moreover, we feel strongly encouraged to keep up our efforts at making further progress towards our ambitious sustainability goals. Therefore, we are continuously developing our processes and drive innovation within the company and beyond. The green and the digital transformation go hand in hand." Infineon is well on track with the implementation of ist CO2-neutrality goal by 2030 (Scope 1 and 2). To date emissions have been reduced by 56.8 percent compared with the base year of 2019 while approximately doubling the business at the same time. As a leading manufacturer of semiconductors for power electronic systems and the IoT, Infineon makes a significant contribution to decarbonization on the way to a net-zero society. Infineon's products and solutions help to save 34 times more CO 2 emissions over the course of their usage than were created during their production.

HEMT Family in Easy-to-Use Flip Chip QFN Packaging
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Learn more:
innoscience.com
  • Product Release
  • 2023-12-11

Innoscience Technology has announced a range of low voltage discrete HEMTs in FCQFN packaging. Rated at 40 V, 100 V and 150 V, the 'flip chip' formatting makes it simple for engineers to use.
40 V-rated FCQFN devices are available with an on-resistance value of 4.3 mΩ (3x4 mm chip size). 100 V HEMTs are offered with RDS(on) ratings of 2.8 mΩ (3x5 mm) and 1.8 mΩ (4x6 mm), while the 150 V-rated parts measuring 4x6 mm are available with 3.9 mΩ and 7 mΩ RDS(on).
The 40 V parts using Innoscience's latest GaN processes achieve performance with figure-of-merit (FOM) values for Qgg*Ron and Idss*Ron. The parts low drain and gate leakage currents enable them to be used in mobile markets and direct-battery-connected applications. Other applications include USB Type C buck-boost converters in laptops. Furthermore, with its latest generation process, Innoscience maintains very tight control of the epitaxy, resulting in a very uniform threshold voltage and on-resistance, leading to a very high wafer yield.
100 V devices suit DC/DC conversion at power levels of up to 2 kW, due to their very low on-resistance. When used in parallel configuration, power levels up to 8 kW can be achieved.
The 150 V targets industrial applications, including solar installations. They have been designed to be very rugged so they do not need the industry-standard 80% derating to be applied (i.e. they are rated at 100% of their voltage). All the 40 V, 100 V and 150 V HEMTs have been tested to and exceeded JEDEC and the GaN-specific JEP 180 standards.

GaN FETs in Compact SMD Packaging
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Learn more:
nexperia.com
  • Product Release
  • 2023-12-11

Nexperia announced that its GaN FET devices, featuring high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now available to designers of industrial and renewable energy applications. Building on two decades of expertise in supplying high-volume, high-quality copper-clip SMD packaging, Nexperia is now proud to extend its packaging approach to GaN cascode switches in CCPAK. The GAN039-650NTB, a 33 mΩ (typ.) Gallium Nitride (GaN) FET within the CCPAK1212i top-side cooling package, ushers in a new era of wide bandgap semiconductors and copper-clip packaging. This technology offers advantages for renewable energy applications such as solar and residential heat pumps, further enhancing Nexperia's commitment to developing the latest component technology for sustainable applications. It is also suited to a wide spectrum of industrial applications such as servo drives, switched-mode power supplies (SMPS), server, and telecom. Nexperia's CCPAK surface mount packaging uses Nexperia's proven innovative copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves device reliability. For maximum flexibility in designs, these CCPAK GaN FETs are available in top- or bottom-cooled configurations to further improve heat dissipation.
The cascode configuration of the GAN039-650NTB enables it to deliver superior switching and on-state performance, with a robust gate offering high margins against noise.  This feature also simplifies application designs by eliminating the requirement for complex gate drivers and control circuitry, instead allowing them to be conveniently driven using standard silicon MOSFET drivers.

Collaboration in Manufacturing Power Devices
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Learn more:
rohm.com
  • Industry News
  • 2023-12-08

A plan by ROHM and Toshiba Electronic Devices & Storage Corporation to collaborate in the manufacture and increased volume production of power devices has been recognized and will be supported by the Ministry of Economy, Trade and Industry as a measure supporting the Japanese Government's target of secure and stable semiconductor supply. ROHM and Toshiba Electronic Devices & Storage will respectively make intensive investments in silicon carbide (SiC) and silicon (Si) power devices, effectively enhance their supply capabilities, and complementally utilize other party's production capacity. ROHM has already announced its participation in the privatization of Toshiba, but this investment did not serve as the starting point for manufacturing collaboration between the two companies. Under intensifying international competition in the semiconductor industry, ROHM and Toshiba Electronic Devices & Storage have been considering collaboration in the power device business for some time, and that resulted in the joint application. ROHM and Toshiba Electronic Devices & Storage will collaborate in manufacturing power devices, through intensive investments in SiC and Si power devices, respectively, toward enhancing both companies' international competitiveness. The companies will also seek to contribute to strengthening the resilience of semiconductor supply chains in Japan.

1-Cell Li-Ion Battery Protection IC with Temperature Sensor Input
  • Product Release
  • 2023-12-08

Nisshinbo Micro Devices has launched the R5668 series single-cell Li-Ion battery protection IC with additional safety measures and control functions for applications demanding a higher level of safety and reliability. The R5668 offers an additional input for connecting an external temperature sensor. This sensor measures the battery's temperature periodically during charging and discharging. In case the battery temperature exceeds a critical threshold and a predefined delay time, the IC responds by turning off both the charge and discharge MOSFETs, ensuring the safety of the battery. During this event, the IC switches to continuous temperature measurement mode to closely track the temperature level. This feature enhances the safety and reliability of battery-powered applications, preventing overheating and potential damage. Parameters for the charging and discharging temperature detection, hysteresis, and delay times are specified in the product version options. The R5668 includes a second additional feature known as the Forced Standby Mode, which can be manually activated by connecting the CTLIO pin to a specific voltage or logic level. When enabled, the IC enters a low-power state with minimal current consumption, effectively preventing further battery discharge. This feature is particularly useful when products are shipped or stored for extended periods, ensuring that the battery remains charged and ready for initial use. The forced standby mode is disabled when connecting the device to a charger. The R5668 comes in a small WLCSP-8-P14 package measuring 1.55 x 0.92 x 0.36 mm3>/sup>.

Call for Papers Open – 2024 IEEE Symposium on VLSI Technology and Circuits
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Learn more:
vlsisymposium.org
  • Event News
  • 2023-12-07

Calling all those interested in submitting a paper for the upcoming IEEE Symposium on VLSI Technology & Circuits. The Symposium will be a fully in-person event with live sessions onsite at the Hilton Hawaiian Village to foster networking, with OnDemand access to technical sessions available one week following the Symposium. The 5-day event will include educational Plenary Sessions, Technical Sessions. Evening Panels, Short Courses, Demo Session for outstanding papers, Workshops, SSCS/EDS Women in Engineering and Young Professional events, and Hawaiian Luau Celebration. Online paper submissions now open! Submission Deadline: February 5, 2024.

Peter Henry Appointed to Board of Directors
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Learn more:
analog.com
  • People
  • 2023-12-07

Analog Devices announced that its Board of Directors has appointed Dr. Peter B. Henry as an independent director and member of the Board's Audit Committee effective December 5, 2023. Dr. Henry is currently the Class of 1984 Senior Fellow at the Hoover Institution and Senior Fellow at the Freeman Spogli Institute for International Studies, both at Stanford University. He is also Dean Emeritus of New York University's Leonard N. Stern School of Business. His appointment expands ADI's Board to 13 members. Dr. Henry also leads the Ph.D. Excellence Initiative (PhDEI), a post-baccalaureate program designed to address underrepresentation in economics by mentoring exceptional students from underrepresented backgrounds interested in pursuing doctoral studies in the field. For his founding and leadership of the PhDEI, Dr. Henry received the 2022 Impactful Mentoring Award from the American Economic Association.
Dr. Henry received a bachelor's degree in economics from the University of North Carolina at Chapel Hill, a bachelor's degree in mathematics from Oxford University where he was a Rhodes Scholar, and a Ph.D. in economics from the Massachusetts Institute of Technology.

Experience the Exciting Plenary Session at APEC 2024
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Learn more:
apec-conf.org
  • Event News
  • 2023-12-07

The APEC Plenary Session is a long-standing tradition of addressing topics of immediate and long-term interest to the practicing power electronics engineer. The on-trend topics featured during the plenary session are brought to you by invited distinguished professionals followed by an interactive Q&A session. This year's lineup features distinguished professionals who will share their insights on a diverse range of topics, including Medical, Wideband Gap Devices, Fusion energy, opportunities, challenges, and the future of power electronics. Check out the current list of speakers and topics below. As a reminder, early-bird registration savings ends January 8th, so be sure to take advantage of our best deal today!

Automotive-Grade Shunt-based Sensing Solution
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Learn more:
melexis.com
  • Product Release
  • 2023-12-07

With the MLX91231 Melexis added a shunt-based sensing solution to its automotive current sensor range. Meeting functional safety requirements, this IVT (current, voltage, and temperature) device combines high accuracy with the intelligence and flexibility of a digital microcontroller unit. The MLX91231, which is integrated in an 8-pin SOIC package, is tailored for DC/DC converters, battery terminal sensors, low and high-voltage power distribution and disconnection devices. The MLX91231 provides a lower than ±0.25% sensitivity drift error over temperature and lifetime and a 1.5µV input referred offset drift error over the same conditions. It allows closer monitoring and therefore greater optimization of low-voltage systems, such as DC/DC converters, battery terminal sensors (BTS), and power distribution & monitoring in zonal infrastructure. By utilizing an integrated MCU, the MLX91231 delivers advanced functionalities beyond just current measurement. Supplied by a regulated 5V or directly by 12V battery, this IVT sensor provides the current, voltage, and junction temperature readout via a selectable LIN or UART output. A diagnosable overcurrent detection (OCD) is already built in to enable safe and simple triggering of pyro fuses without the need to develop a complicated safety mechanism. The MLX91231 is ASIL B(D) compliant as per ISO 26262 and supports system-level integration up to ASIL D. The custom software design of the MLX91231 is consistent with existing and future Melexis solutions.

Financing Dedicated to Environmental Initiatives
  • Industry News
  • 2023-12-07

Mitsubishi Electric Corporation announced that it has set the terms and conditions for issuing its first corporate green bonds in the Japanese market, as initially announced in a news release on November 10. The proceeds from the bonds will be used to construct a silicon-carbide (SiC) power semiconductor plant and upgrade related facilities. Mitsubishi Electric has positioned sustainability as a cornerstone of its overall business, including initiatives to address climate change and other pressing issues facing modern society. This commitment to sustainability is reflected in the company's Environmental Sustainability Vision 2050 and Environmental Declaration to "protect the air, land, and water with our hearts and technologies to sustain a better future for all." Mitsubishi Electric has set a goal to aim for net zero greenhouse gas emissions from factories and offices by FY2031 and net-zero greenhouse gas emissions in its entire value chain by FY2051, and is striving to create and expand businesses that contribute to carbon neutrality. In light of the company's active sustainability initiatives, 41 investors have announced their intention to invest in Mitsubishi Electric's first green bonds. Going forward, Mitsubishi Electric expects to accelerate efforts to contribute to the achievement of sustainable development goals (SDGs) in society for greater sustainability.

Motor Driver ICs Enable Full Torque at Zero Speed for Sensorless BLDC Motors
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Learn more:
renesas.com
  • Product Release
  • 2023-12-06

Renesas Electronics introduced a family of motor driver ICs for brushless DC (BLDC) motor applications. The devices implement Renesas' patent-pending technologies that enable full torque at zero speed from motors without sensors. The motor driver ICs enable Renesas customers to design sensorless BLDC motor systems with higher horsepower and speed at a given torque. They also improve power consumption and reliability, while reducing cost and board space by lowering the number of components designers need to use.
Renesas is introducing three motor driver ICs with the new technology:
The RAA306012 65V, 3-phase Smart Driver is a standalone device that can be paired with a variety of MCUs from Renesas or from other sources.
The RAJ306101 integrates a Renesas RX13T 32-bit MCU with the RAA306012 in a single package, reducing board space and improving cost and reliability.
The RAJ306102 integrates a 16-bit Renesas RL78/G1F MCU with the RAA306012, providing similar integration benefits.

The ability to enable full torque at zero speed without sensors is made possible by two Renesas innovations. Enhanced Inductive Sensing (EIS) offers stable position detection when the motor is completely stopped. When the motor is operating at extremely low speed, Motor Rotor position Identification (MRI) is used. At higher speeds, the motor driver ICs use conventional methods. Both of the EIS and MRI algorithms include patent-pending technology developed by Renesas.

150W DC/DC Converter with 10:1 Input Range for Rail Applications
  • Product Release
  • 2023-12-06

Flex Power Modules has launched its PKM7200W series of DC/DC converters with an input range of 16-160V (185V/s). In a case measuring 62 x 40 x 13 mm3 the products provide 150W continuous output power and 12V, 24V or 54VDC fully regulated single outputs with up to 89% efficiency and 4kVDC isolation, meeting the requirements of EN 50155 for rail, as well as IEC/EN/UL 62368-1 for IT and audio/visual applications. The PKM7200W series is equipped with a VBUS pin, an input-referenced connection that is boosted to around 100 V, irrespective of the input voltage. This can be used to charge a user-supplied capacitor which the DC/DC switches in when the input power is interrupted. The feature enables long hold-up time with a relatively small capacitor, to meet the 10–30ms requirements of EN 50155. The products are compliant and/or qualified according to EN 45545-2, EN 61373, IEC 60068, EN 50121-3-2, EN 55011, EN 61000-4. EMI conducted emissions meet EN 55032, CISPR 32 and FCC part 15J 'Class B' with an external filter. The PKM7200W series operates from -40°C to +100°C baseplate temperature with derating, depending on attached heatsink and airflow. Typically, the parts provide full load with a 20mm attached quarter-brick heatsink up to 60°C ambient air temperature in natural convection and to around 90°C with 3m/s airflow. The PKM7200W series is fully featured, with a programmable input under-voltage lockout, remote control, output trim and remote sensing. Protection includes over-temperature, and output short-circuit, over-voltage and over-current.

Francis Monteiro is now General Manager of BMZ Brazil
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Learn more:
bmz-group.com
  • People
  • 2023-12-06

BMZ Group has welcomed Francis Monteiro as General Manager BMZ Brazil. BMZ Brazil is BMZ Group's upcoming, sixth global production site. Francis Monteiro brings over twenty-five years of experience from various top management positions in internationally operating companies such as Sodecia Group, RAR Group - Colep Packaging.

Miniature TMR Sensors with Enhanced Sensitivity and Power Efficiency
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Learn more:
littelfuse.com
  • Product Release
  • 2023-12-06

Littlefuse introduced the 54100 and 54140 miniature Tunnel Magneto-Resistance (TMR) effect sensors which are claimed to "offer unmatched sensitivity and power efficiency, revolutionizing the magnetic sensing industry". The key differentiator of the 54100/54140 sensors is their sensitivity and 100x improvement in power efficiency compared to Hall Effect sensors. These sensors offer activation in the x-y plane instead of the traditional z-axis within the operating temperature range of -40 to +100°C. The 54100 flange-mount sensor's housing measures are 25.5 x 11.00 x 3.00mm3. The case design allows for both screw and adhesive mounting. With a 3-wire configuration (Power - Ground - Output) and digital output, this sensor can switch up to 5.5VDC and 3.0mA output current. The standard lead lengths are 300mm and 1000mm, and there are customization options for high-volume production needs. On the other hand, the 54140 flat pack sensor delivers its performance in a compact package, measuring 23.00 x 14.00 x 5.90 mm3. Like the 54100 it also provides digital output and is available as a three-wire sensor configuration with the same performance characteristics and customization. These Omnipolar TMR sensors are well-suited for applications like position and limit sensing, RPM measurement, flow metering, commutation of brushless DC motors, magnetic encoders and angle sensing.

CoolMOS S7T Device with integrated Temperature Sensor
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Learn more:
infineon.com
  • Product Release
  • 2023-12-05

Infineon Technologies launches its CoolMOS S7T product family with an integrated temperature sensor to improve the accuracy of junction temperature sensing. The integration of these products has a positive impact on the durability, safety, and efficiency of many electronic applications. The CoolMOS S7T is best suited for solid-state relay (SSR) applications for enhanced performance and reliability due to its RDS(on) and its embedded sensor. Infineon's approach improves the relay's performance and ensures reliable operation even under overload conditions. The integrated temperature sensor provides up to 40 percent greater accuracy and ten times faster response time than a standard independent on-board sensor located at the drain. Additionally, the monitoring process can be performed individually within a multi-device system for improved reliability. Compared to electromechanical relays, the total power dissipation can be improved up to two times, while current solid state triac solutions are more than 5 times less efficient. Improved efficiency and the ability to handle higher loads help in reducing power consumption and energy costs. Starter kits are also available


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Higher Power Density with 100 V GaN Power StagesTexas Instruments introduced two power conversion ...11799Product ReleaseHigher Power Density with 100 V GaN Power StagesTexas Instruments introduced two power conversion device portfolios to help engineers achieve more power in smaller spaces. According to TI these devices are "providing the highest power density at a lower cost". TI's 100 V integrated GaN power stages, LMG2100R044 and LMG3100R017, feature thermally enhanced dual-side cooled package technology to simplify thermal designs and "achieve the highest power density in mid-voltage applications at more than 1.5 kW/in<sup>3</sup>", which equals about 91,5 W/cm<sup>3</sup>. TI claims that its 1.5 W isolated DC/DC modules with integrated transformers are "the industry's smallest and most power-dense, helping engineers shrink the isolated bias power-supply size in automotive and industrial systems by over 89 %". The devices allow designers to accomplish a system efficiency of 98% or higher given the lower output capacitance and lower gate-drive losses. A key enabler of the thermal performance in the 100 V GaN portfolio is the thermally enhanced dual-side cooled package. There is also an automotive-qualified solution available in this small package.20.02.2024 13:30:00Febnews_2024-03-01_18.jpg\images\news_2024-03-01_18.jpghttps://news.ti.com/2024-02-20-New-portfolios-from-TI-push-the-limits-of-power-design-further,-help-engineers-achieve-industry-leading-power-densityti.com
Seminars about Sensor and Measurement TopicsThe AMA Association for Sensors and Measurement (A...11790Event NewsSeminars about Sensor and Measurement TopicsThe AMA Association for Sensors and Measurement (AMA) has published its seminar program for 2024, which includes a variety of seminars in German language on various topics, including ultrasonic measurement technology, optical spectroscopy, displacement measurement, industrial image processing and the discussion on "Chat-GPT - hype or hysteria". The seminars are offered online or as face-to-face events and are under scientific direction. They offer in-depth knowledge about sensors, sensor systems, their functions and possible applications. Participants are given the opportunity to choose the right sensors for their application and evaluate their advantages and disadvantages. The seminars are said to offer deep insights into specialist topics in sensor and measurement technology. The AMA seminars aim to provide participants with manufacturer-independent knowledge and to inform them about the current state of sensor and measurement technology. They are aimed at experts from the fields of design/development, research, production and sales.20.02.2024 13:00:00Febnews_2024-03-01_8.jpg\images\news_2024-03-01_8.jpghttps://www.ama-sensorik.de/presse/ama-pressemitteilungen-2024/ama-sensorik.de
Battery Exhibition and ConferenceThe cooperation between ees Europe, an exhibition ...11787Event NewsBattery Exhibition and ConferenceThe cooperation between ees Europe, an exhibition for batteries and energy storage systems and InterBattery, a battery exhibition in South Korea, enters its second round this year. The InterBattery Europe Showcase will once again provide visitors of ees Europe with an additional exhibition area where they can network with companies from South Korea. The Battery Day Europe conference complements the presentations in the exhibition area. This year, the conference will provide comprehensive insights into the world of EV batteries, covering everything from the latest legislation, how to secure battery materials as well as groundbreaking technologies and business trends. Special attention will be given to the German-Korean cooperation in the ReLioS network for innovative approaches to battery recycling. The conference will also shine a light on EV battery production technologies. ees Europe takes place from June 19–21, 2024 as part of The smarter E Europe, Europe's largest alliance of exhibitions for the energy industry, at Messe München in Munich. More than 115,000 visitors from all over the world and over 2,800 exhibitors – more than 1,000 of whom are battery and energy storage system suppliers – are expected to attend. The InterBattery Europe Showcase exhibition area is expected to host around 200 companies – including companies such as Samsung SDI, LG Energy Solution and SK On. Last year, this additional exhibition space presented 72 companies, 62 of which were South Korean.20.02.2024 10:00:00Febnews_2024-03-01_5.jpg\images\news_2024-03-01_5.jpghttps://www.ees-europe.com/press-release/interbattery-showcase-2024?ref=m646dffd6bfeb497a66427d25-t1709163862-cee539beaees-europe.com
Power Converters run on Vibrational EnergyUniversity of California San Diego and CEA-Leti (l...11786Industry NewsPower Converters run on Vibrational EnergyUniversity of California San Diego and CEA-Leti (located in Grenoble/France) scientists have developed a piezoelectric-based DC/DC converter that unifies all power switches onto a single chip to increase power density. This power topology, which extends beyond existing topologies, blends the advantages of piezoelectric converters with capacitive-based DC/DC converters. The power converters developed by the team are much smaller than the huge, bulky inductors currently used for this role. The devices could eventually be used for any type of DC/DC conversation, in everything from smart phones, to computers, to server farms and AR/VR headsets. The results were presented in the paper, "An Integrated Dual-side Series/Parallel Piezoelectric Resonator-based 20-to-2.2V DC/DC Converter Achieving a 310% Loss Reduction", at ISSCC 2024. The paper explains that a hybrid DSPPR converter exploits integrated circuits' ability to offer sophisticated power stages in a small area compared to discrete designs, and enables efficient device operation at voltage conversion ratios (VCR) of less than 0.1.20.02.2024 09:00:00Febnews_2024-03-01_4.jpg\images\news_2024-03-01_4.jpghttps://www.leti-cea.com/cea-tech/leti/english/Pages/What's-On/Press%20release/ISSCC-2024-papers.aspxleti-cea.com
Plug-and-Play Gate Driver for High-Voltage SiC Power ModulesTo help developers implement SiC solutions and fas...11793Product ReleasePlug-and-Play Gate Driver for High-Voltage SiC Power ModulesTo help developers implement SiC solutions and fast-track the development process, Microchip Technology has developed the 3.3 kV XIFM plug-and-play mSiC gate driver with patented Augmented Switching technology, which is designed to work out-of-the-box with preconfigured module settings. To speed time to market, the complex development work of designing, testing and qualifying a gate driver circuit design is already completed with this plug-and-play solution. The XIFM digital gate driver is a compact solution that features digital control, an integrated power supply and a robust fiber-optic interface that improves noise immunity. This gate driver has preconfigured "turn-on/off" gate drive profiles that are tailored to optimize module performance. It incorporates 10.2 kV primary-to-secondary reinforced isolation with built-in monitoring and protection functions including temperature and DC link monitoring, Undervoltage Lockout (UVLO), Overvoltage Lockout (OVLO), short-circuit/overcurrent protection (DESAT) and Negative Temperature Coefficient (NTC). This gate driver also complies with EN 50155, a key specification for railway applications.20.02.2024 07:30:00Febnews_2024-03-01_12.jpg\images\news_2024-03-01_12.jpghttps://www.microchip.com/en-us/about/news-releases/products/microchip-expands-msic-solutions-with-3-3-kv-xifm-gate-drivermicrochip.com
New EMEA Headquarters for DistributorMouser Electronics has opened its new EMEA headqua...11784Industry NewsNew EMEA Headquarters for DistributorMouser Electronics has opened its new EMEA headquarters in Munich. The opening took place in the presence of distinguished guests from customers, manufacturers, members of the media, TTI and local support companies. The new office, which is located relatively close to the Olympic stadium and directly above a subway station, is already in operation: People from 23 nations work there. Mark Burr-Lonnon, Senior Vice President Global Service provided a look at the company history from $ 21 million of sales in 2008 to far more than $ 1 billion in 2023 – and all of this just in Europe. While Europe participated less than 10 % to Mouser's worldwide sales in 2008 it contributed almost exactly one third to Mouser's worldwide turnover in 2023. And this is why Mark Burr-Lonnon invited all guests to participate in an office tour after enjoying a piece of a Mouser celebration cake, that he cut in person.20.02.2024 07:00:00Febnews_2024-03-01_2.jpg\images\news_2024-03-01_2.jpghttps://eu.mouser.com/eu.mouser.com
Compact MOSFET Modules for Efficiencies of up to 98%SemiQ added a product to its QSiC family. The QSiC...11796Product ReleaseCompact MOSFET Modules for Efficiencies of up to 98%SemiQ added a product to its QSiC family. The QSiC 1200 V SiC MOSFET modules in full-bridge configurations deliver near zero switching loss, significantly improving efficiency, reducing heat dissipation, and allowing the use of smaller heatsinks. With a high breakdown voltage exceeding 1400 V, the QSiC modules in full-bridge configurations withstand high-temperature operation at T<sub>j</sub> = 175 °C with minimal R<sub>DS(on)</sub> shift across the entire temperature spectrum. Using high-performance ceramics, SemiQ's modules are well-suited for demanding applications that require bidirectional power flow or a broader range of control, such as solar inverters, drives and chargers for Electric Vehicles DC/DC converters and power supplies. In solar inverter applications, SemiQ's technology allows reaching an efficiency of up to 98 % - as well as more compact designs. It helps reduce heat loss, improve thermal stability, and enhance reliability, backed by over 54 million hours of HTRB/H3TRB testing. The 1200 V MOSFETs also maximize efficiency gains in DC/DC converters while enhancing reliability and minimizing power dissipation. To guarantee a stable gate threshold voltage and premium gate oxide quality for each module, SemiQ conducts gate burn-in testing at the wafer level, and all parts have undergone testing surpassing 1400V.19.02.2024 10:30:00Febnews_2024-03-01_15.jpg\images\news_2024-03-01_15.jpghttps://semiq.com/highly-efficient-compact-mosfet-modules-in-full-bridge-configurations-for-solar-inverter-and-ev-charging/semiq.com
Distribution Agreement expanded to USA, Australia & New ZealandPulsiv of Cambridge (UK) and Astute Electronics of...11789Industry NewsDistribution Agreement expanded to USA, Australia & New ZealandPulsiv of Cambridge (UK) and Astute Electronics of Stevenage (UK) have expanded their distribution agreement to include USA, Australia and New Zealand. Astute Electronics was founded 35 years ago "to bridge the gap between broadline and independent distribution in the European supply chain". Still privately owned, the business now operates across five continents. Using a patented switching technique, Pulsiv has developed an special method for converting AC to DC that delivers a combination of benefits in power electronics designs. This technology has extended the range of conventional flyback topologies to replace expensive LLC solutions, while achieving "an unrivalled efficiency profile". Pulsiv offers Osmium microcontrollers which implement these switching techniques, AC/DC front-end circuit configurations that include a Pulsiv OSMIUM microcontroller and supporting components for a complete AC/DC front-end design as well as evaluation boards and reference designs.16.02.2024 12:00:00Febnews_2024-03-01_7.jpg\images\news_2024-03-01_7.jpghttps://pulsiv.co.uk/news/pulsiv-and-astute-electronics-expand-distribution-agreement/pulsiv.co.uk
Distributor stocks MOSFET Family with now higher Power EfficiencyRutronik integrates the StrongIRFET&trade; 2 MOSFE...11797Product ReleaseDistributor stocks MOSFET Family with now higher Power EfficiencyRutronik integrates the StrongIRFET&trade; 2 MOSFETs from Infineon into its product portfolio. This generation provides a higher power efficiency, which leads to improved overall system performance. Due to a higher current load tolerance, several parallel connected components are no longer necessary. That saves space on the PCB and reduces costs. The transistors are in stock and available in different housing variants such as TO-220; TO-220 FullPAK, D2PAK, D2PAK 7-pin, DPAK, and TOLL. Compared to the previous StrongIRFET components in the 40 V to 100 V range, the technology offers up to 40 percent better on-resistance and up to 60 percent lower nominal gate charge. In addition, higher rated currents enable improved current carrying capacity and the new generation is suitable for both high and low switching frequencies. Standard pinouts enable simple drop-in replacement. The MOSFETs are 100 percent safety-tested, RoHS-compliant, halogen-free following IEC61249-2-21 product validation, and meet the JEDEC standard. They can be used in a wide range of applications, e.g. for UPS, battery management, or motor drives.15.02.2024 11:30:00Febnews_2024-03-01_16.jpg\images\news_2024-03-01_16.jpghttps://www.rutronik24.com/rutronik24.com
Semiconductor Company to buy PCB Design CompanyRenesas intends to acquire Altium by way of a Sche...11788Industry NewsSemiconductor Company to buy PCB Design CompanyRenesas intends to acquire Altium by way of a Scheme of Arrangement. The acquisition is said to enable "two industry leaders to join forces and establish an integrated and open electronics system design and lifecycle management platform that allows for collaboration across component, subsystem, and system-level design".  Together, Renesas and Altium, aim to build an integrated and open electronics system design and lifecycle management platform that unifies the steps from component selection and evaluation to simulation and PCB physical design at a system level. The acquisition brings together Altium's cloud platform capabilities with Renesas' semiconductor portfolio. The combination will also enable integration with third-party vendors across the ecosystem to execute all electronic design steps seamlessly on the cloud. The electronics system design and lifecycle management platform will deliver integration and standardization of various electronic design data and functions and enhanced component lifecycle management, while enabling seamless digital iteration of design processes to increase overall productivity. This is said to bring "significantly faster innovation" and to "lower barriers to entry for system designers by reducing development resources and inefficiencies". Altium's history began in 1985 from Australia as one of the world's first printed-circuit board (PCB) design tool providers. The transaction has been unanimously approved by the boards of directors of both companies and is expected to close in the second half of 2024. Altium will continue to be led by CEO Aram Mirkazemi as a wholly-owned subsidiary of Renesas.15.02.2024 11:00:00Febnews_2024-03-01_6.jpg\images\news_2024-03-01_6.jpghttps://www.renesas.com/us/en/about/press-room/renesas-acquire-pcb-design-software-leader-altium-make-electronics-design-accessible-broader-marketrenesas.com
Schottky Barrier Diodes with short Reverse Recovery TimeROHM has developed 100 V breakdown Schottky barrie...11794Product ReleaseSchottky Barrier Diodes with short Reverse Recovery TimeROHM has developed 100 V breakdown Schottky barrier diodes (SBDs) that deliver a short reverse recovery time (t<sub>rr</sub>) of 15ns for power supply and protection circuits in automotive, industrial, and consumer applications. Although numerous types of diodes exist, highly efficient SBDs are increasingly being used inside a variety of applications. Particularly SBDs with a trench MOS structure that provide lower V<sub>F</sub> than planar types enable higher efficiency in rectification applications. One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies – resulting in higher power loss when used for switching. In response, ROHM developed a series utilizing a proprietary trench MOS structure that simultaneously reduces both V<sub>F</sub> and I<sub>R</sub> (which are in a trade-off relationship) while also achieving a short t<sub>rr</sub>. Expanding on the four existing conventional SBD lineups optimized for a variety of requirements, the YQ series is ROHM's first to adopt a trench MOS structure. The design reduces t<sub>rr</sub> losses by approximately 37 % and overall switching losses by around 26 % over general trench-type MOS products. As such, the devices are are well-suited for sets requiring high-speed switching, such as drive circuits for automotive LED headlamps and DC-DC converters in xEVs that are prone to generate heat.15.02.2024 08:30:00Febnews_2024-03-01_13.jpg\images\news_2024-03-01_13.jpghttps://www.rohm.com/news-detail?news-title=2024-02-15_news_sbd&defaultGroupId=falserohm.com
How to Design the Compensation Circuit for a Flyback ConverterWürth Elektronik has published its Application Not...11798Product ReleaseHow to Design the Compensation Circuit for a Flyback ConverterWürth Elektronik has published its Application Note "Compensating the feedback loop of a current-controlled flyback converter with optocoupler". The guide is aimed at developers looking to use a DC/DC flyback converter to achieve greater stability and reliability in power supply design. It might also be useful for those who use optocouplers for galvanic isolation of the feedback path. Applications include primary and auxiliary power supplies for home appliances, battery chargers for smartphones and tablets, as well as LED lighting. This Application Note also provides assistance with power supplies for desktop and laptop computers, industrial power supplies and auxiliary supplies in motor drives, or for Power-over-Ethernet (PoE). AppNote ANP113 explains in detail how the feedback loop can be compensated using a current-controlled flyback converter with optocoupler, and which aspects require special attention. The CTR (current transfer ratio) influences the control loop of the compensation circuit and therefore must be carefully considered in the design stage. ANP113 places particular emphasis on design constraints imposed by the optocoupler parameters and on the related solutions. The validation results of a 30 W flyback converter prototype are also included in the AppNote.13.02.2024 12:30:00Febnews_2024-03-01_17.jpg\images\news_2024-03-01_17.jpghttps://www.we-online.com/en/news-center/press?d=anp113we-online.com
Automotive-Grade SiC MOSFET Half Bridge SMPD ModulesInventchip Technology has added two automotive-gra...11792Product ReleaseAutomotive-Grade SiC MOSFET Half Bridge SMPD ModulesInventchip Technology has added two automotive-grade SiC MOSFET half bridge SMPD modules named IVSM12080HA2Z and IVSM06025HA2Z. The modules are specified 1200 V/80 m&#8486; and 650 V/25 m&#8486;. SMPD is a compact, topside-cooling surface-mounted package with a plastic surface size of 25 mm x 23 mm. Compared with TO-247, the SMPD saves over 25 % PCB space, and the more important thing is that the SMPD reduces the half-bridge stray-inductance of power loop by around 40 %. The reduction of the stray inductance reduces MOSFET V<sub>DS</sub> overshoot, V<sub>GS</sub> ringing, switching loss and EMI noise. It helps engineers to solve the critical design issues and achieve a high density and reliable power conversion design. Compared with TO-247 with external electrical isolation assembly, SMPD with traditional AL<sub>2</sub>O<sub>3</sub> and SiN lowers junction-to-heatsink thermal resistance by over 20 % and 50 % respectively for the same 25 m&#8486;/1200 V SiC MOSFET die. It eases the thermal design and increases the power handling potential. A NTC is also integrated in the SMPD package. It senses the DBC temperature directly and offers more accurate module temperature sensing for reliable thermal protection. The SMPD package has a minimum 4 mm creepage from terminals to the package's heatsink mounting surface, which can safely work for both 400 V and 800 V systems without isolation reinforce. Both modules are AEC Q101 and AQG 324 certified.13.02.2024 07:30:00Febnews_2024-03-01_11.jpg\images\news_2024-03-01_11.jpghttps://www.inventchip.com.cn/en/inventchip.com
Joint Efforts for Magnetic Component SolutionsITG Electronics has collaborated with STMicroelect...11800Product ReleaseJoint Efforts for Magnetic Component SolutionsITG Electronics has collaborated with STMicroelectronics (ST) in developing magnetic component solutions for 54 V/48 V to 12 V converter applications. ST's patented 54 V/48 V to 12 V stacked buck converter features an on-board solution with a quarter brick space using the PM6780 dual digital multiphase controller, the STPRDC02A high-voltage full-bridge driver, and ITG's L101353A-3R6MHF non-coupling dual inductors. This magnetics design collaboration is named Stacked buck converter with unified coupled inductor. Combined with ST's PM6780 and STPRDC02A, ITG's L101456A-1R4MHF can elevate the overall power rating of ST's 48 V solution to 1500 W. This product combination is claimed to "provide the industry's highest power density rating for 48 V solutions". The on-board stacked buck converter 48 V conversion system offers cost savings, form factor flexibility, and a customizable design compared to power-module designs.12.02.2024 14:30:00Febnews_2024-03-01_19.jpg\images\news_2024-03-01_19.jpghttps://itg-electronics.com/en/series/908itg-electronics.com
100 V bi-directional GaN IC for 48 V/60 V BMS ApplicationsInnoscience Technology has launched another 100 V ...11795Product Release100 V bi-directional GaN IC for 48 V/60 V BMS ApplicationsInnoscience Technology has launched another 100 V bi-directional member of the company's VGaN IC family. The first family of VGaN devices rated 40 V with an on-resistance range between 1.2 mOhm and 12 mOhm have been successfully deployed in the USB OVP of several mobile phones. The 100 V VGaN (INV100FQ030A) can be employed to achieve high efficiency in 48 V or 60 V battery management systems (BMS), as well as for high-side load switch applications in bidirectional converters, switching circuits in power systems, and other fields. Such device it is usable in applications such as home batteries, portable charging stations, e-scooters, e-bikes etc. One VGaN replaces two back-to-back Si MOSFETs; they are connected with a common drain to achieve bidirectional switching of battery charging and discharging, further reducing on-resistance and loss significantly with respect to traditional Silicon solution. BOM count, PCB space and costs are also reduced accordingly. The INV100FQ030A 100V VGaN IC supports two-way pass-through, two-way cut-off and no-reverse-recovery modes of operation. Devices feature a low gate charge of 90 nC, a dynamic on-resistance of 3.2 mOhm and a package size of 4 mm x 6 mm. These 100 V GaN series products are in mass production in En-FCQFN (exposed top side cooling) and FCQFN packaging.12.02.2024 09:30:00Febnews_2024-03-01_14.jpg\images\news_2024-03-01_14.jpghttps://www.innoscience.com/site/details/711?el=mdnavinnoscience.com
Miniature Inductor in C0402 Package for all Market ApplicationsDelevan's C0402 miniature RF inductor is integrate...11775Product ReleaseMiniature Inductor in C0402 Package for all Market ApplicationsDelevan's C0402 miniature RF inductor is integrated in a package which is claimed to be "ultra-small". A high reliability 0402 version of the C0402, for use in critical applications, is also available. The C0402 is manufactured and tested in the USA by an AS9100D certified company. It's offered in inductance ranges of 1.0nH to 120nH and features Self Resonant Frequencies, which provide stable inductor performance into the multi GHz range. Designed with a high-temperature ceramic core and magnet wire the C0402 inductor is rated for an operating temperature range of - 40°C to +125°C and is AEC-Q200 Grade 1 compliant. The C0402 is available with Gold terminations for use with epoxy bonded or solderable applications.09.02.2024 08:30:00Febnews_2024-02-15_9.jpg\images\news_2024-02-15_9.jpghttps://www.delevan.com/en/products/power-inductorsdelevan.com
Energy Balance Calculator for enhanced battery life optimizationNexperia announced the release of the Energy Balan...11779Product ReleaseEnergy Balance Calculator for enhanced battery life optimizationNexperia announced the release of the Energy Balance Calculator, which is a web-based tool designed to assist battery management engineers in maximizing the battery life of their applications. The calculator facilitates the integration of Nexperia's Energy Harvesting PMICs into their systems by providing engineers with precise data for informed decision-making. At the core of Nexperia's Energy Harvesting PMICs is the Maximum Power Point Tracking (MPPT) algorithm, enabling efficient energy harvest from the environment for various consumer electronics and IoT devices. To utilize these PMICs at their full potential, the calculator works with real-world technical parameters. It calculates the energy delivered to the load and the energy compensation. Thus, offering insights into potential battery life extension or achieving energy autonomy. Engineers can furthermore visualize system efficiency and precision through an efficiency curve provided by the tool.08.02.2024 12:30:00Febnews_2024-02-15_13.jpg\images\news_2024-02-15_13.jpghttps://www.nexperia.com/about/news-events/press-releases/Nexperia-introduces-Energy-Balance-Calculator-for-enhanced-battery-life-optimization-nexperia.com
Isolated Power Module with 84 % Efficiency and ProtectionThe MagI<sup>3</sup>C-FISM power modules from Würt...11774Product ReleaseIsolated Power Module with 84 % Efficiency and ProtectionThe MagI<sup>3</sup>C-FISM power modules from Würth Elektronik are now complemented by the WPME-FISM 'Fixed Isolated SIP/SMT Module' SMT-8 with 3.3V to 5V, rated for 1W POUT. The DC/DC voltage converter with fixed output voltage and integrated switching power stage, transformer, as well as input and output capacitance, is 100% pin-to-pin compatible with the previous MagI<sup>3</sup>C-FISM, however, it offers improved properties – the efficiency goes up to 84 percent, the ambient temperature range is now specified with 105°C and the isolation voltage is 3kV (for 60 seconds). Like some of its predecessors, this power module has continuous short-circuit protection. The MagI<sup>3</sup>C FISM power modules do not require any external components for operation. Applications for the module include supplying voltages for interfaces and microcontrollers in test and measurement technology or industrial electronics. It serves as simple functional isolation for overvoltage protection. For example, it prevents ground loops and shifts as well as interference in the signal path or sensor systems. The entire product range is UL 62368-1 recognized. The low level of conducted and radiated electromagnetic interference complies with the EN55032 Class B / CISPR-32 standard.07.02.2024 07:30:00Febnews_2024-02-15_8.jpg\images\news_2024-02-15_8.jpghttps://www.we-online.com/en/news-center/press?d=fism-smtwe-online.com
Cooperation for sustainable SiC ProductionESK-SIC, a company which is active in silicon carb...11769Industry NewsCooperation for sustainable SiC ProductionESK-SIC, a company which is active in silicon carbide (SiC) materials, and Kyocera have started a strategic partnership with the goal to develop "innovative solutions for the sustainable production of silicon carbide and the associated end products". By-products and end-of-life ceramics will be recycled using RECOSiC technology in order to produce raw materials that are specifically tailored to various end applications. Compared to currently available SiC raw materials on the market in terms of material science aspects, while minimising the carbon footprint of the process, the RECOSiC recycling technology is said to bring a technological upgrade. The partnership between ESK-SIC and Kyocera aims to improve the efficiency and sustainability of the entire silicon carbide value chain. This will involve developing new manufacturing technologies, optimising production processes, researching innovative applications and establishing circular economy principles for the recycling of SiC materials.06.02.2024 08:00:00Febnews_2024-02-15_3.jpg\images\news_2024-02-15_3.jpghttps://www.kyocera-fineceramics.de/en/news/kyocera-fineceramics-europe-gmbh-and-esk-sic-gmbh-cooperatekyocera-fineceramics.de
Automotive qualified -60V P-channel MOSFETsToshiba Electronics announces the availability of ...11777Product ReleaseAutomotive qualified -60V P-channel MOSFETsToshiba Electronics announces the availability of XPH8R316MC and XPH13016MC, two more -60V P-channel MOSFETs based upon their U-MOS VI process. The devices are tailored for use in automotive applications such as load switches, semiconductor relays and motor drives. The AEC-Q101 qualified components are housed in an SOP Advance (WF) package - a surface mount style with a wettable flank terminal structure facilitating automated optical inspection (AOI) of the solder joints. The copper connectivity within the package reduces package resistance, improves efficiency and reduces heat build-up. The XPH8R316MC is rated for -90A continuous drain current (I<sub>D</sub>) and the XPH13016MC is rated for an I<sub>D</sub> of -60A. The pulsed drain current (I<sub>DP</sub>) is double these values, -180A and -120A, respectively. Both devices are rated for a drain-source voltage (V<sub>DSS</sub>) of -60V and are capable of operating at channel temperatures (T<sub>ch</sub>) up to 175ºC. The maximum drain-source on-resistance (R<sub>DS(ON)</sub>) of the XPH8R316MC is 8.3m&#8486;. For the XPH13016MC, the value is 12.9m&#8486;.05.02.2024 10:30:00Febnews_2024-02-15_11.jpg\images\news_2024-02-15_11.jpghttps://toshiba.semicon-storage.com/eu/company/news/2024/02/mosfet-20240205-1.htmltoshiba.semicon-storage.com
Call for PapersPCIM Asia is calling for papers. The event will ta...11768Event NewsCall for PapersPCIM Asia is calling for papers. The event will take place from 28–30.8.2024 in Shenzhen, China. As a platform connecting the academia and industry, the speakers can gain direct feedback from both sides. Within this framework the organizer encourage people to present their research. The organizer, Messe Frankfurt, expects "over 600 qualified audiences, mainly R&D engineers" for PCIM Asia. Three special awards (the Best Paper Award, the Young Engineer Award and the University Scientist Award) will be given out to some presenters. In parallel to the conference there will be an exhibition with more than 200 exhibitors. The official deadline for abstract submissions is the 4th of March, 2024.05.02.2024 07:00:00Febnews_2024-02-15_2.jpg\images\news_2024-02-15_2.jpghttps://pcimasia-expo.cn.messefrankfurt.com/shenzhen/en/programme-events/pcim-asia-conference/call-for-paper.htmlpcimasia-expo.cn
Acquisition: Electronic Inks added to Advanced Materials PortfolioHeraeus Electronics has acquired the PriElex elect...11767Industry NewsAcquisition: Electronic Inks added to Advanced Materials PortfolioHeraeus Electronics has acquired the PriElex electronics inks business line from Kayaku Advanced Materials. PriElex is known for its expertise in electronics inks. By joining forces with Heraeus Electronics the acquisition is expected to enhance Heraeus' position and provide customers with an even broader range of solutions for thick film applications. Partners and customers of both Heraeus Electronics and PriElex can expect a smooth transition and ongoing support throughout the integration process. Furthermore, customers can be assured of uninterrupted service and access to a broader portfolio of advanced solutions.01.02.2024 06:00:00Febnews_2024-02-15_1.jpg\images\news_2024-02-15_1.jpghttps://www.heraeus.com/en/het/products_and_solutions_het/thick_film_materials/prielex/prielex_1.htmlheraeus.com
Surface-Mount Resettable Fuse Rated to 240VACBel Fuse announced "the industry's only surface mo...11761Product ReleaseSurface-Mount Resettable Fuse Rated to 240VACBel Fuse announced "the industry's only surface mount, PPTC resettable fuse, line-volt-rated to 240VAC". Designed to protect against electrical overloads and short circuits, Bel 0ZAF resettable fuses provide circuit protection for a variety of applications in the IoT, industrial, and medical sectors. These fuses are crucial for use in safeguarding industrial controls, test and measurement equipment, robotics, and safety systems, and deliver the reliability and durability required by these advanced technologies. Their soldered surface mount design not only offers cost efficiency for PC mount assembly, but also accelerates design and production timelines by eliminating the need for through-hole mounting. Bel 0ZAF fuses are UL recognized components and IEC certified.31.01.2024 11:30:00Jannews_2024-02-01_16.jpg\images\news_2024-02-01_16.jpghttps://www.belfuse.com/circuit-protectionbelfuse.com
Low Power High Voltage DiodesDean Technology (DTI) has introduced a series of h...11791Product ReleaseLow Power High Voltage DiodesDean Technology (DTI) has introduced a series of high voltage diodes. This so-called VDRM Series is an axial-leaded, high voltage diode line that offers industry standard performance and high reliability. VDRM units range from 2.5 to 16 kV, 50 to 125 mA, and have a maximum reverse recovery time of 200 ns. These diodes are best suited for low to medium power, small form-factor applications. Further, VDRM diodes offer a miniature package size and are compliant to the RoHS directive. In addition to the new VDRM Series, DTI also offers a large catalog of diodes for many different high voltage needs.31.01.2024 06:30:00Jannews_2024-03-01_10.jpg\images\news_2024-03-01_10.jpghttps://www.deantechnology.com/new-low-power-high-voltage-diodes/deantechnology.com
Over-voltage protection: SMD Varistors with high Surge Current CapabilityTDK presents two varistor series in SMD design. Th...11782Product ReleaseOver-voltage protection: SMD Varistors with high Surge Current CapabilityTDK presents two varistor series in SMD design. The types of both series are available for a wide range of operating voltages from 175V<sub>RMS</sub> to 460V<sub>RMS</sub>, corresponding to 225V<sub>DC</sub> to 615V<sub>DC</sub>. While the B72210M series of surge devices, which are equivalent to S14 leaded disk varistors, offers a surge current capability of 6000A, the B72214M series types, which are equivalent to S20 leaded disk varistors, have a high surge current capability of 10,000A. All types are designed for a high operating temperature of a maximum of +125 °C and extremely damp heat environment (85% relative humidity at +85 °C). The SMD high surge series is qualified to AEC-Q200. In terms of designs, all types are available in a horizontal as well as vertical version. The horizontal version of the B72210M series has dimensions of 22 x 15 x 11 mm<sup>3</sup>, while the B72214M series has dimensions of 27 x 18 x 11 mm<sup>3</sup>, (L x W x H). The vertical types have dimensions of 15 x 10 x 20 mm<sup>3</sup> and 18 x 10 x 25.5 mm<sup>3</sup>, respectively. Typical applications of SMD surge protection components are on-board chargers, power supplies, frequency converters, photovoltaic systems and household appliances.30.01.2024 15:30:00Jannews_2024-02-15_16.jpg\images\news_2024-02-15_16.jpghttps://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-offers-varistors-in-smd-design-with-high-surge-current-capability/3219634tdk-electronics.tdk.com
Offline Flyback Switcher IC with Zero-Voltage Switching (ZVS) for 95 % EfficiencyPower Integrations has released the InnoSwitch5-Pr...11765Product ReleaseOffline Flyback Switcher IC with Zero-Voltage Switching (ZVS) for 95 % EfficiencyPower Integrations has released the InnoSwitch5-Pro family of high-efficiency, programmable flyback switcher ICs. The single-chip switcher achieves over 95 percent efficiency with a novel secondary-side control scheme which achieves zero-voltage switching (ZVS) without a dedicated and costly additional high-voltage switch. The IC, which features a 750V or a 900V PowiGaN primary switch, primary-side controller, FluxLink isolated feedback and secondary controller with an I<sup>2</sup>C interface, is intended for single- or multi-port USB PD adapters. Applications are notebooks, high-end cellphones and other portable consumer products, including designs that require the USB PD EPR (Extended Power Range) protocol. For example, the company has demonstrated 140W / 28V USB PD adapters in 68,8 cm<sup>3</sup> using 106 components. InnoSwitch5-Pro flyback switcher ICs feature lossless input line voltage sensing on the secondary side for adaptive DCM/CCM and ZVS control to maximize efficiency and simplify design across line and load. The ICs also feature a post-production tolerance offset to facilitate accurate output constant-current (CC) control of better than two percent to support the UFCS protocol. An efficiency of more than 95 percent allows designers to eliminate heat sinks, spreaders and potting materials for thermal management.30.01.2024 15:30:00Jannews_2024-02-01_20.jpg\images\news_2024-02-01_20.jpghttps://investors.power.com/news/news-details/2024/Power-Integrations-Introduces-InnoSwitch5-Offline-Flyback-Switcher-IC/default.aspxpower.com
Dual-Channel High-Side Switches with Protection for Automotive ApplicationsDiodes has introduced its first automotive-complia...11780Product ReleaseDual-Channel High-Side Switches with Protection for Automotive ApplicationsDiodes has introduced its first automotive-compliant (according to AEC-Q100), dual-channel, high-side power switches - the ZXMS82090S14PQ, ZXMS82120S14PQ, and ZXMS82180S14PQ - as an expansion of its IntelliFET self-protected MOSFET portfolio. These intelligent switches are said to "deliver high power within a compact footprint while also providing robust protection and diagnostic capabilities". The series is designed for driving 12V automotive loads, such as LEDs, bulbs, actuators, and motors in automotive body control and lighting systems. The trio all feature a dual 41V-rated n-channel MOSFET array with onboard circuitry that protects against short circuits, manages inrush currents, and safeguards against overvoltage conditions including load dumps. In addition, the switches provide overtemperature protection with auto-restart, plus protection against electrostatic discharge damage. Loss of ground and reverse polarity protection can also be implemented with the aid of a few external components. A dedicated current sense pin provides analog current monitoring of the outputs and fault indication for short-to-battery, short-to-ground, and open-load detection. These devices provide smaller footprint alternatives to relays, fuses, and discrete circuits. Supplied in a SO-14EP package they are also form, fit, and functional equivalents for existing power switch devices, where customers need improved product supply.30.01.2024 13:30:00Jannews_2024-02-15_14.jpg\images\news_2024-02-15_14.jpghttps://www.diodes.com/about/news/press-releases/dual-channel-high-side-switches-from-diodes-incorporated-provide-robust-protection-for-automotive-applications/diodes.com
Dedicated Website: Alternative Energy Resource Hub with Trusted Products for Design EngineersOn a dedicated website Mouser Electronics now prov...11778Product ReleaseDedicated Website: Alternative Energy Resource Hub with Trusted Products for Design EngineersOn a dedicated website Mouser Electronics now provides engineers with key information to solve today's design challenges through its dedicated alternative energy resource centre, featuring a comprehensive selection of content, products and solutions. Readers will discover uses of renewable power, insights into commercial and industrial electric vehicles, and learn how energy storage systems will be key for the transition to renewable energy. The content offers perspectives on the alternative energy landscape, providing a deeper look into policy changes, energy harvesting practices and energy storage installation parameters. The resource centre is a collection of articles, blogs, and videos.30.01.2024 11:30:00Jannews_2024-02-15_12.jpg\images\news_2024-02-15_12.jpghttps://resources.mouser.com/alternative-energymouser.com
More Discrete Semiconductors on the LinecardTTI Europe has become an authorized distributor of...11746Industry NewsMore Discrete Semiconductors on the LinecardTTI Europe has become an authorized distributor of Panjit semiconductors. Doing so TTI adds a range of diodes, MOSFETs, protection devices, IGBTs, SiC devices, and ICs to its linecard. Panjit has manufactured semiconductor discrete components, including diodes, Transient Voltage Suppressors (TVS) and transistors for more than 30 years. The company has a wide range of MOSFET, IGBT, FRED, Schottky, ESD Array and SiC devices, bipolar junction transistors, bridges and more, which are suited for markets such as data centres, industrial control, automotive, electric vehicles and 5G. On the picture you see – from left to right: Markus Walz, Business Development Manager TTI Europe; Alla Zoubar-Bloch, Sales Manager Central and Northern Europe, Panjit; Karen Lee, Managing Director Europe, Panjit; Joerg Frodl, Director Product Marketing Europe Passives & Discretes TTI Europe.29.01.2024 07:00:00Jannews_2024-02-01_1.jpg\images\news_2024-02-01_1.jpghttps://www.ttieurope.com/content/ttieurope/en/about-tti/news-center/corporate-news/press-releases/2024/january/pr-01292024-tti-europe-distributor-panjit-semiconductors.htmlttieurope.com
Joint Lab for NEV Developments with GaN and SiC TechnologyNavitas Semiconductor and SHINRY announced the ope...11750Industry NewsJoint Lab for NEV Developments with GaN and SiC TechnologyNavitas Semiconductor and SHINRY announced the opening of a joint R&D power laboratory to accelerate the development of New-Energy Vehicle (NEV) power systems enabled by Navitas' GaNFast&trade; technology. SHINRY is active in on-board power supplies and strategic supplier to Honda, Hyundai, BYD, Geely, XPENG, BAIC and other automobile manufacturers. The joint lab accelerates development projects, with GaN technology combining with system-design skills and engineering talent to enable higher high power density, lightweight, efficient designs that translate to faster charging and extended range, with faster time-to-market. Navitas' own dedicated EV system Design Center, located in Shanghai will provide comprehensive technical support for the joint lab. Navitas will not only supply SHINRY with power devices, but will also engage in system-level R&D from the initial stages of product specification and design, through to test platforms and customized packaging solutions. The result will be more efficient, higher power density, more reliable, and cost-effective power systems for NEVs.25.01.2024 11:00:00Jannews_2024-02-01_5.jpg\images\news_2024-02-01_5.jpghttps://navitassemi.com/navitas-and-shinry-accelerate-new-energy-vehicle-developments-with-next-gen-power-semiconductors/navitassemi.com
Joint Innovation Application Center for PD fast charging and and CO2-saving SolutionsInfineon Technologies announced its joint Innovati...11772Industry NewsJoint Innovation Application Center for PD fast charging and and CO<sub>2</sub>-saving SolutionsInfineon Technologies announced its joint Innovation Application Center in Shenzhen with Anker Innovations, a company which is very active in charging technology. With the center already fully operating, it is paving the way for more energy-efficient and CO<sub>2</sub>-saving charging solutions that support decarbonization. Driven by the growing consumer demand for faster charging solutions due to an increasing usage of mobile devices, laptops and other battery-powered devices, the idea of establishing an Anker-Infineon Innovation Application Center dated back to 2021. After two years of preparation, this Innovation Application Center now serves as application hub for local partners to develop power-delivery (PD) fast charging solutions with higher power density, mainly based on Infineon's next-generation Hybrid Flyback (HFB) controller product family and the CoolGaN IPS for fast chargers above 100W. With the Innovation Application Center also intend to shorten the application cycle and accelerate the time to market for future products. Beyond charging solutions, the joint lab is focusing on a more diversified range of consumer applications using semiconductors based on wide-bandgap materials such as GaN.25.01.2024 11:00:00Jannews_2024-02-15_6.jpg\images\news_2024-02-15_6.jpghttps://www.infineon.com/cms/en/about-infineon/press/market-news/2024/INFPSS202401-050.htmlinfineon.com
Head of Sales for Passives and Electromechanical ComponentsWürth Elektronik eiSos combines sales for the prod...11749PeopleHead of Sales for Passives and Electromechanical ComponentsWürth Elektronik eiSos combines sales for the product groups 'passive and electromechanical components' into a single management structure. The Head of Sales in the new structure is Heiko Arnold. He was previously responsible for the sales of passive components in Germany, has now also taken over responsibility for the sales of electromechanical components. Heiko Arnold has been with Würth Elektronik eiSos for 24 years and looks back over more than 20 years of national and international management experience in sales. He points out: "We always see Sales and Customer Service in its entirety."25.01.2024 10:00:00Jannews_2024-02-01_4.jpg\images\news_2024-02-01_4.jpghttps://www.we-online.com/en/news-center/press?d=head-of-saleswe-online.com
Compact SOT-223-3 600V MOSFETs for Smaller, Lower Profile DesignsROHM Semiconductor announced a lineup of compact 6...11762Product ReleaseCompact SOT-223-3 600V MOSFETs for Smaller, Lower Profile DesignsROHM Semiconductor announced a lineup of compact 600V Super Junction MOSFETs, the R6004END4 / R6003KND4 / R6006KND4 / R6002JND4 / R6003JND4. These devices are well-suited for small lighting power supplies, pumps, and motors. Compared to the conventional TO-252 package (6.60mm × 10.00mm × 2.30mm), ROHM's products reduce area and thickness by 31% and 27%, contributing to smaller, lower profile applications. At the same time, the same footprint as the TO-252 package can be used, enabling mounting on existing circuit boards without modification. Offering distinctive features, three of the models are optimized for compact power supplies. The R6004END4, characterized by low noise, is suitable for applications where noise is a concern, while the R6003KND4 and R6006KND4, capable of high-speed switching, are designed for sets requiring low loss, high efficiency operation. The R6002JND4 and R6003JND4 utilize proprietary PrestoMOS technology to achieve significantly lower switching losses by speeding up reverse recovery time (trr) to typically 40ns or, respectively, 42ns, making them well-suited for motor-equipped devices. These devices' gate capacities QGS at 15V are specified to be 7nC and, respectively, 8nC.24.01.2024 12:30:00Jannews_2024-02-01_17.jpg\images\news_2024-02-01_17.jpghttps://www.rohm.com/news-detail?news-title=2024-01-24_news_sjmos&defaultGroupId=falserohm.com
100V MOSFET in Double-Sided Cooling DFN 5x6 Package for almost 200AAlpha and Omega Semiconductor announced the AONA66...11760Product Release100V MOSFET in Double-Sided Cooling DFN 5x6 Package for almost 200AAlpha and Omega Semiconductor announced the AONA66916, which is a 100V MOSFET packaged in a top and bottom side cooling DFN 5 x 6 package. This package keeps the semiconductor products cooler. Typically, when using the standard DFN 5x6 package, the bottom contact is the main contributor for cooling, and most of the heat generated by the Power MOSFETs will be transferred to the PCB. This increases the PCB thermal management design considerations to meet system requirements. AOS' top and bottom cooling DFN 5x6 package enables heat transfer between the exposed top contact and heat sink due to its large surface contact area construction. This allows the device to achieve a low thermal resistance (Rthc-top max) of 0.5°C / W with results being transferred to the PCB board, enabling significant thermal performance improvements. The top exposed DFN 5x6 package of the AONA66916 shares the same 5mm x 6mm footprint as AOS' standard DFN 5x6 package, eliminating the need to modify existing PCB layouts. AONA66916 has a maximum R<sub>DS(on)</sub> rating of 3.4mOhms and operates with a maximum junction temperature of 175°C. Its continuous drain current is specified to be 197A at 25°C.24.01.2024 10:30:00Jannews_2024-02-01_15.jpg\images\news_2024-02-01_15.jpghttps://aosmd.com/sites/default/files/2024-01/AONA66916_PR.pdfaosmd.com
New Headquarters and Manufacturing Center in Chandler, AZSaras Micro Devices has opened its new headquarter...11771Industry NewsNew Headquarters and Manufacturing Center in Chandler, AZSaras Micro Devices has opened its new headquarters and manufacturing facility in Chandler, Arizona. The decision to open the manufacturing center in Arizona is part of Saras' longer-term strategy to support its growth in the high-performance computing artificial intelligence /machine learning sectors and capitalize on the rapidly expanding semiconductor ecosystem in the region. The company is relocating its headquarters from Atlanta, Georgia, where its Research & Development Center will remain. The move involves a planned investment of over $50 million in the Chandler facility covering about 10,000 m<sup>2</sup> of clean room, manufacturing, and administrative space. Saras will employ approximately 50 people in the near term, which will be primarily composed of engineering talent. By the close of 2025, both the site and staff will undergo significant expansion, with a projected growth to more than 12.000 m<sup>2</sup>, inclusive of a larger clean room of about 12,000 m<sup>2</sup>. The proximity of the new headquarters to other key semiconductor ecosystem partners, coupled with Arizona's cost-effective operations and investment in talent development, uniquely positions Saras to capitalize on these strategic advantages while contributing to a robust domestic semiconductor industry.24.01.2024 10:00:00Jannews_2024-02-15_5.jpg\images\news_2024-02-15_5.jpghttps://www.sarasmicro.com/2024/01/25/saras-micro-devices-celebrates-grand-opening-of-new-headquarters-and-manufacturing-center-of-excellence-in-chandler-arizona/sarasmicro.com
SiC FET in D2PAK for 750V EV DesignsQorvo unveiled an automotive-qualified SiC FET off...11757Product ReleaseSiC FET in D2PAK for 750V EV DesignsQorvo unveiled an automotive-qualified SiC FET offering an R<sub>DS(on)</sub> of 9m&#8486; in a compact D2PAK-7L package. This 750V SiC FET is the first in a new family of pin-compatible SiC FETs from Qorvo with R<sub>DS(on)</sub> options up to 60m&#8486;, making them well suited for electric vehicle applications, including on-board chargers, DC/DC converters and PTC heater modules. The UJ4SC075009B7S features a 9m&#8486; typical R<sub>DS(on)</sub> at 25°C needed for reducing conduction losses and maximizing efficiency in high voltage, multi-kilowatt automotive applications. Its surface-mount package enables automated assembly flows. This 750V family complements Qorvo's existing 1200V and 1700V automotive SiC FETs in D2PAK packaging to form a complete portfolio addressing EV applications that span 400V and 800V battery architectures. These fourth generation SiC FETs leverage Qorvo's circuit configuration, in which a SiC JFET is co-packaged with a Si MOSFET to produce a device with the efficiency advantages of wide bandgap switch technology and the simpler gate drive of silicon MOSFETs. The key features of the UJ4SC075009B7S include a threshold voltage V<sub>G(th)</sub> of typically 4.5V allowing 0 to 15V drive, a body diode operating with a V<sub>FSD</sub> of 1.1V, a reverse recovery Q<sub>rr</sub> of 338nC and a gate charge Q<sub>G</sub> of 75nC. The AECQ101-qualified device operates at temperatures up to 175°C.24.01.2024 07:30:00Jannews_2024-02-01_12.jpg\images\news_2024-02-01_12.jpghttps://www.qorvo.com/newsroom/news/2024/qorvo-boosts-performance-in-750v-ev-designs-with-industry-leading-sic-fet-in-d2pakqorvo.com
Measurement Instruments in EuropeDistrelec announced the introduction of KPS test a...11755Industry NewsMeasurement Instruments in EuropeDistrelec announced the introduction of KPS test and measurement instruments for sale throughout Europe. KPS is a manufacturer of electrical measurement instruments for professional installers, electricians and technicians. The Distrelec portfolio now includes a DCM clamp meter that is manufactured in Europe. KPS keeps their EMEA stock in the North of Spain in order to enable fast deliveries to Distrelec, which is a trading brand of RS Group.23.01.2024 16:00:00Jannews_2024-02-01_10.jpg\images\news_2024-02-01_10.jpghttps://www.distrelec.biz/en/distrelec.biz
150mm and 200mm SiC Wafer Supply SecuredInfineon Technologies and Wolfspeed announced the ...11748Industry News150mm and 200mm SiC Wafer Supply SecuredInfineon Technologies and Wolfspeed announced the expansion and extension of their existing long-term 150mm silicon carbide wafer supply agreement, originally signed in February 2018. The extended partnership includes a multi-year capacity reservation agreement. It contributes to Infineon's general supply chain stability, also with regard to the growing demand for silicon carbide semiconductor products for automotive, solar and EV applications and energy storage systems. "As the demand for silicon carbide devices continues to increase, we are following a multi-source strategy to secure access to a high-quality, global and long-term supply base of 150mm and 200mm SiC wafers," said Jochen Hanebeck, CEO of Infineon Technologies. Furthermore, Infineon has formalized an agreement with silicon carbide supplier SK Siltron CSS earlier this year. Under the agreement, SK Siltron CSS will provide Infineon with competitive and high-quality 150-millimeter SiC wafers, supporting the production of SiC semiconductors. In a subsequent phase, SK Siltron CSS will play an important role in assisting Infineon's transition to a 200-millimeter wafer diameter. SK Siltron CSS partners with global semiconductor manufacturers by supplying compound semiconductor wafer solutions. SK Siltron CSS is a subsidiary of South Korea-based SK Siltron, a part of the SK Group.23.01.2024 09:00:00Jannews_2024-02-01_3.jpg\images\news_2024-02-01_3.jpghttps://www.infineon.com/cms/en/about-infineon/press/press-releases/2024/INFXX202401-049.htmlinfineon.com
Power Semiconductor Modules for EVs and PHEVsMitsubishi Electric Corporation announced the comi...11758Product ReleasePower Semiconductor Modules for EVs and PHEVsMitsubishi Electric Corporation announced the coming release of six J3-Series power semiconductor modules for various electric vehicles (xEV), featuring either a silicon carbide metal-oxide semiconductor field-effect transistor (SiC-MOSFET) or a RC-IGBT (Si), with compact designs and scalability for use in the inverters of EVs and PHEVs. All six J3-Series products will be available for sample shipments by the end of this quarter. In the xEV sector, power semiconductor modules are used widely in power conversion devices such as inverters for xEV drive motors. In addition to extending the cruising range of xEVs, compact, high-power, high-efficiency modules are needed to further downsize batteries and inverters. But due to the high safety standards set for xEVs, power semiconductors used in drive motors must be more reliable than those used in general industrial applications. Development of these SiC products was partially supported by Japan's New Energy and Industrial Technology Development Organization (NEDO).23.01.2024 08:30:00Jannews_2024-02-01_13.jpg\images\news_2024-02-01_13.jpghttps://www.mitsubishielectric.com/news/2024/0123.htmlmitsubishielectric.com
Head of Asia OperationsGuanghua Yang is the new Managing Director Asia & ...11754PeopleHead of Asia OperationsGuanghua Yang is the new Managing Director Asia & Vice President at SCHURTER, responsible for all activities of SCHURTER in Asia, including Sales, Marketing, Operations and R&D. Guanghua Yang has more than 30 years of experience, most of which he gained in technology companies in the field of electronic components. Prior to his appointment as Managing Director Asia & Vice President in the SCHURTER Group, he was General Manager & Vice President for Asia at C&K based in Shanghai, China. Earlier, he held other executive positions in sales and marketing. He holds a Bachelor of Science degree and an MBA degree from Tsinghua University.17.01.2024 15:00:00Jannews_2024-02-01_9.jpg\images\news_2024-02-01_9.jpghttps://www.schurter.com/en/news/new-head-of-asia-at-schurterschurter.com
AC/DC Frontend Modules with PFCGAIA Converter's AC/DC Power-Factor Corrected fron...11763Product ReleaseAC/DC Frontend Modules with PFCGAIA Converter's AC/DC Power-Factor Corrected front-end modules are compatible with common airborne AC input bus voltages and variable frequencies, while being particularly suited for use in centralized power architectures in conjunction with PoL or isolated DC modules. All of the modules meet the stringent requirements of DO-160, ABD-100, and Mil-Std-704 specifications. GAIA's AC/DC front-end modules have a soft-start, active current limitation, short circuit protection, and inhibit function. The soft-start/active current limitation prevents inrush current during start-up. The short circuit protection safeguards the module against short circuits by shutting down and restoring to normal when the overload is removed. The front end series operates under 50W with two isolated low voltage outputs. Series above 150W provide non-isolated high voltage output.17.01.2024 13:30:00Jannews_2024-02-01_18.jpg\images\news_2024-02-01_18.jpghttps://www.gaia-converter.com/product-overview/ac-dc-power-factor-corrected/gaia-converter.com
MIL-COTS DC/DC Front-End FiltersP-DUKE has developed the MCF series of MIL-COTS DC...11756Product ReleaseMIL-COTS DC/DC Front-End FiltersP-DUKE has developed the MCF series of MIL-COTS DC/DC front-end filters, meeting the requirements of MIL-STD 1275E (28V DC electrical systems in military vehicles) and MIL-STD 461 (electromagnetic interference control for subsystems and equipment). These filters accept 9-36VDC input voltage, making them suitable for with 28V or 24V bus systems offering up to 250W output power. The devices are also applicable to heavy industrial and rolling stock applications. The MCF series features active input over-voltage protection, clamping over-voltages for up to 50ms to a safe level of 40V, and absorbing +/-250V spikes. With additional MLCCs, the internal EMI filter meets MIL-STD 461G limits. It also includes various active protection functions for advanced protection of the DC/DC converter module. The MCF filter module is fully integrated also meet environmental MIL-STD 810F specifications for shock and vibration and have an operating temperature range of -40°C to 105°C (optionally -55°C).17.01.2024 06:30:00Jannews_2024-02-01_11.jpg\images\news_2024-02-01_11.jpghttps://www.pduke.com/news_detail28_140.htmpduke.com
Automation1 XA4 1- or 2-Axis PWM Servo DriveFor precision motion control in industrial and res...11766Product ReleaseAutomation1 XA4 1- or 2-Axis PWM Servo DriveFor precision motion control in industrial and research systems Aerotech introduced the XA4 1- or 2-Axis HyperWire Multi-Axis PWM Servo Drives. These dual- and single-axis drives enable machine builders to experience Automation1 precision on all of their systems. The simplified dual-axis XA4 brings control to multiple axes of motion in the same machine footprint. Built on Automation1 motion control technology, the XA4 communicates to Automation1 PC- and drive-based controller products over the HyperWire motion bus, supports multiple feedback device types and includes on-board memory. The amplifiers control brushless AC, brush DC, voice coil and stepper motor types at up to 340V<sub>DC</sub> operating voltage and 20A peak current capability.16.01.2024 16:30:00Jannews_2024-02-01_21.jpg\images\news_2024-02-01_21.jpghttps://www.aerotech.com/press-releases/premier-precision-motion-control-for-less/aerotech.com
MOSFET Relays Extend Capacity and Operating TemperatureOmron Electronic Components has expanded its MOSFE...11781Product ReleaseMOSFET Relays Extend Capacity and Operating TemperatureOmron Electronic Components has expanded its MOSFET relay line-up to offer higher operating temperature and enhanced capacity in a high-current six-pin DIP format. Omron's G3VM-63BR and G3VM-63ER extend the company's 60V DIP6 MOSFET relay range up to 0.7A continuous load current. Operating from -40 to 110 deg C, these MOSFET relays contribute to much smaller and denser equipment than equivalent mechanical devices. Power consumption on the input is lower compared to all electromechanical relays, but especially reed relays, further contributing to energy-saving equipment. Maximum resistance with output ON is typically 0.3&#8486; (0.1&#8486;. with connection C), whilst typical capacitance between output terminals is specified as 520pF. Their maximum trigger LED forward current is 2mA, whilst turn ON time and OFF times are 2ms and 3ms respectively. For factory automation applications, the models have NC contacts allowing status output to linked devices including power OFF status. The relays can also be used alongside the NO contact type, enabling switching control of multiple loads with just one input control. Applications in factory automation include PLCs machine tools, inverters, robot controllers, temperature control together with fire, gas or smoke alarm systems. Further uses for the G3VM-63ER extend to sensor signal transfer and output signal switching - for example with gas detection and similar alarm applications.16.01.2024 14:30:00Jannews_2024-02-15_15.jpg\images\news_2024-02-15_15.jpghttps://components.omron.com/eu-en/products/relays/G3VM-63BR-63ERomron.com
Addition to the Line Card: Rugged ConnectorsAvnet Abacus will be selling the portfolio of rugg...11751Industry NewsAddition to the Line Card: Rugged ConnectorsAvnet Abacus will be selling the portfolio of rugged DEUTSCH connectors from TE Connectivity. The DEUTSCH family of environmentally sealed electrical connectors has been a solution for industrial and commercial vehicles and other applications for more than 40 years, especially where dirt, moisture, salt spray and vibration can otherwise contaminate or damage electrical connections. It includes the HD and DT ranges of robust-circular and rugged-rectangular connectors, respectively, especially designed for industrial and commercial vehicle applications.16.01.2024 12:00:00Jannews_2024-02-01_6.jpg\images\news_2024-02-01_6.jpghttps://my.avnet.com/abacus/about-us/about-avnet-abacus/news/avnet-abacus-gains-distribution-franchise-for-te-rugged-deutsch-connectors//avnet.com
Automotive Step-down Switching Regulators save Board SpaceABLIC now offers the S-19954/5 Series of automotiv...11759Product ReleaseAutomotive Step-down Switching Regulators save Board SpaceABLIC now offers the S-19954/5 Series of automotive step-down switching regulators operating at 5.5V with a 1A output and housed in HSNT-8(1616)B packages (1.6 x 1.6 x t0.41mm<sup>3</sup>). The device enables an efficiency of up to 95% when delivering an output current of 1A at output voltages of 0.8 to 3.3V from an input voltage between 2.7 and 5.5V. In addition, while the circuit configuration of conventional switching regulators required five or more external components, the S-19954/5 Series has an integrated feedback resistance circuit and phase compensation circuit to set the output voltage, which makes it possible to configure an application circuit using just one small coil and two capacitors. These characteristics allow the S-19954/5 Series to result in a 45% reduction compared to conventional products. The S-19954/5 Series is also equipped with a power good function for output voltage monitoring. Furthermore, the S-19954/5 Series is also PPAP (Production Part Approval Process) capable and planned for compliance with Grade 1 of the AEC-Q100 quality standard for automotive ICs. Typical applications are secondary power supplies for automotive devices as well as camera modules and other automotive applications.16.01.2024 09:30:00Jannews_2024-02-01_14.jpg\images\news_2024-02-01_14.jpghttps://www.ablic.com/en/semicon/news/2024/01/16/s-19954-19955/ablic.com
R&D Manager at Swedish GaN-on-SiC Semiconduductor ManufacturerAnders Lundskog is the new R&D manager at SweGaN, ...11747PeopleR&D Manager at Swedish GaN-on-SiC Semiconduductor ManufacturerAnders Lundskog is the new R&D manager at SweGaN, a European semiconductor manufacturer that develops and produces custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers. Anders Lundskog has a background in process development for GaN materials at Infineon and system engineering from Saab, He holds a Doctor of Philosophy (Ph.D.), Materials Science, and Master of Science (MSc), Applied Physics and Electrical Engineering, from Linköping University of Technology. Spurred by significant interest in volume orders from major customers, in 2023 SweGaN announced the construction of a new production facility in Linköping Sweden to embrace global demand - with prognosis for production is Q1 2024. SweGaN's strategy is closely aligned with the accelerated global demands for GaN-on-SiC epiwafers used in 5G telecommunications infrastructure, defense radars, satellite communications and high voltage power switches.16.01.2024 08:00:00Jannews_2024-02-01_2.jpg\images\news_2024-02-01_2.jpghttps://swegan.se/2966/swegan.se
Partnership in Power ProductsAcal BFi now partners with Delta Electronics. The ...11752Industry NewsPartnership in Power ProductsAcal BFi now partners with Delta Electronics. The collaboration between Acal BFi and Delta Electronics combines their expertise and resources for providing solutions to develop power optimised applications, reduce costs, and achieve sustainable solutions. Delta Electronics core competence is in high-efficiency power electronics. Under this partnership, Acal BFi and Delta Electronics will leverage their respective strengths and capabilities to offer customers a suite of power technology solutions along with industry knowledge, and the ability to deliver tailor-made solutions in areas such as renewable energy, factory automation, machine automation, medical equipment.13.01.2024 13:00:00Jannews_2024-02-01_7.jpg\images\news_2024-02-01_7.jpghttps://www.acalbfi.com/uk/news-and-insights/new-partnership-delta-electronicsacalbfi.com
Overtemperature Detection Solution for EV Li-ion Battery PacksWith its TTape&trade; solution Littelfuse introduc...11764Product ReleaseOvertemperature Detection Solution for EV Li-ion Battery PacksWith its TTape&trade; solution Littelfuse introduces an overtemperature detection platform designed to transform the management of Li-ion battery systems. TTape helps vehicle systems manage premature cell aging effectively while reducing the risks associated with thermal runaway incidents. It is well-suited for a wide range of applications, including automotive EV/HEVs, commercial vehicles, and Energy Storage Systems (ESS). Its distributed temperature monitoring capabilities enable detection of localized cell overheating, thereby improving battery life and enhancing the safety of battery installations. With a single TTape device, multiple cells can be monitored, thus alerting the BMS sooner in case of overtemperature scenarios with a response time of less than one second. Calibration isn't necessary because TTape can directly integrate with existing BMS. The TTape Distributed Temperature Monitoring Platform is available in tape and reel or box packaging, depending on the length required.11.01.2024 14:30:00Jannews_2024-02-01_19.jpg\images\news_2024-02-01_19.jpghttps://www.littelfuse.com/about-us/news/news-releases/2024/littelfuse-unveils-advanced-overtemperature-detection-solution-for-electric-vehicle-li-ion-battery-packs.aspxlittelfuse.com
Renesas to Acquire Transphorm: Expanding its Power Portfolio with GaN TechnologyRenesas Electronics and Transphorm announced that ...11724Industry NewsRenesas to Acquire Transphorm: Expanding its Power Portfolio with GaN TechnologyRenesas Electronics and Transphorm announced that they have entered into a definitive agreement pursuant to which a subsidiary of Renesas will acquire all outstanding shares of Transphorm's common stock. The transaction values Transphorm at approximately $339 million. The acquisition will provide Renesas with in-house GaN technology, which is described by Renesas to be "a key next-generation material for power semiconductors, expanding its reach into fast-growing markets such as EVs, computing (data centers, AI, infrastructure), renewable energy, industrial power conversion and fast chargers/adapters". Renesas claims that demand for GaN is predicted to grow by more than 50 percent annually. Renesas will implement Transphorm's auto-qualified GaN technology to develop new enhanced power solution offerings, such as X-in-1 powertrain solutions for EVs, along with computing, energy, industrial and consumer applications. The board of directors of Transphorm has unanimously approved the definitive agreement with respect to the transaction and recommended that Transphorm stockholders adopt such definitive agreement and approve the merger. The transaction is expected to close in the second half of calendar year 2024, subject to Transphorm stockholder approval, required regulatory clearances and the satisfaction of other customary closing conditions. In other news Renesas had already announced the establishment of an in-house SiC production line, supported by a 10 year SiC wafer supply agreement.11.01.2024 06:00:00Jannews_2024-01-15_1.jpg\images\news_2024-01-15_1.jpghttps://www.renesas.com/us/en/about/press-room/renesas-acquire-transphorm-expand-its-power-portfolio-gan-technologyrenesas.com
APEC 2024 Provides Childcare During the Conference and ExhibitionOnsite at APEC 2024, day-long childcare for childr...11732Event NewsAPEC 2024 Provides Childcare During the Conference and ExhibitionOnsite at APEC 2024, day-long childcare for children of attendees will be available during the conference and exhibition. In order to use these services attendees must sign up for them by Jan. 29, 2024. In order to do so the Applied Power Electronics Conference (APEC) has partnered with KiddieCorp which will provide on-site childcare services from 8:00 a.m. to 5:00 p.m., from Tuesday to Thursday (Feb. 27-29). Conveniently located at the Hyatt Regency, Long Beach, the services will enable APEC-registered parents to attend the conference and exhibition in the Long Beach Convention Center while their children are cared for next door. The KiddeCorp team is prepared to closely monitor and entertain kids aged 3-12 years with numerous activities designed to ensure they have age-appropriate fun. KiddieCorp employees are trained in first aid, CPR and emergency response preparedness, so parents can have peace of mind while navigating the exhibit floor, attending conference sessions or participating in the Spouse and Guest program events. "Providing childcare will encourage power electronics professionals to bring their families to APEC 2024 knowing their children will be cared for and entertained while they attend sessions and other activities," said Tim McDonald, APEC 2024 General Chair. "This service, combined with the Spouse and Guest Hospitality program offering excursions to Catalina and whale-watching, will provide a memorable experience in Long Beach for the entire family."10.01.2024 14:30:00Jannews_2024-01-01_9.jpg\images\news_2024-01-01_9.jpghttps://apec-conf.org/apec-conf.org
STMicroelectronics Announces new OrganizationSTMicroelectronics moves from three to two product...11731Industry NewsSTMicroelectronics Announces new OrganizationSTMicroelectronics moves from three to two product groups, AMPS and MDRF. The Analog, Power & Discrete, MEMS and Sensors Group (APMS) will be led by Marco Cassis, ST President and member of the Executive Committee, and the Microcontrollers, Digital ICs and RF products group (MDRF) will be led by Remi El-Ouazzane, ST President and member of the Executive Committee. The APMS Product Group will include all ST analog products, including Smart Power solutions for automotive as well as all ST Power & Discrete product lines including Silicon Carbide products complemented by MEMS and Sensors. APMS will include two Reportable Segments: Analog products, MEMS and Sensors (AM&S); Power and discrete products (P&D). The MDRF Product Group will include all ST digital ICs and microcontrollers, including automotive microcontrollers but also RF, ADAS, Infotainment ICs. MDRF will include two Reportable Segments: Microcontrollers (MCU) as well as Digital ICs and RF Products (D&RF). Concurrent with this new organization Marco Monti, ST President of the former Automotive and Discrete Product Group, will leave the company. To complement the existing Sales & Marketing organization, a new application marketing organization by end market will be implemented across all ST Regions. This will provide ST customers with end-to-end system solutions based on the company's product and technology portfolio. The application marketing organization will cover the following four end markets: Automotive / Industrial Power and Energy / Industrial Automation, IoT and AI / Personal Electronics, Communication Equipment and Computer Peripherals. The current regional Sales & Marketing organization remains unchanged.10.01.2024 13:30:00Jannews_2024-01-15_8.jpg\images\news_2024-01-15_8.jpghttps://newsroom.st.com/media-center/press-item.html/c3225.htmlst.com
Acquisition of 1500 VDC Converter Technology and TeamDanfoss Drives has announced the acquisition of th...11730Industry NewsAcquisition of 1500 VDC Converter Technology and TeamDanfoss Drives has announced the acquisition of the ACE300 product and the takeover of the product team from Finland-based company Ampner to extend the electrification portfolio with a dedicated 1500 VDC power converter. The product will be integrated within Danfoss Drives' portfolio of Electrification Solutions with primary focus on Smart Grids and energy storage. Mika Kulju, President of the Danfoss Drives business, says: "With 2030 climate targets becoming ever more imminent, decarbonization via electrification is accelerating in multiple sectors. There is a growing trend in all focus application areas where 1500 V DC is starting to play a key role. This is a big step for Danfoss Drives in ensuring a complete electrification offering, thus securing the right solutions for our customers in their electrification projects."10.01.2024 12:30:00Jannews_2024-01-15_7.jpg\images\news_2024-01-15_7.jpghttps://www.danfoss.com/en/about-danfoss/news/dds/danfoss-acquires-1500-VDC-converter-technology-and-extends-electrification-portfolio/danfoss.com
GaN FETs Enable 75 - 231 Ampere Laser Diode Control in Nanoseconds for LidarEPC launches three laser driver boards dubbed EPC9...11741Product ReleaseGaN FETs Enable 75 - 231 Ampere Laser Diode Control in Nanoseconds for LidarEPC launches three laser driver boards dubbed EPC9179, EPC9181 and EPC9180 containing pulse current laser drivers of 75 A, 125 A, and 231 A, showcasing EPC's AEC-Q101-qualified GaN FETs. These FETs (EPC2252, EPC2204A, and EPC2218A) are 30% smaller and said to be more cost-effective than their predecessors. Designed for both long and short-range automotive lidar systems, these boards expedite solution evaluation with varied input and output options. All boards share identical functionality, differing only in peak current and pulse width. Utilizing a resonant discharge power stage, they employ a ground-referenced GaN FET driven by LMG1020 gate driver. The GaN FET's ultrafast switching enables rapid discharge of a charged capacitor through the load's stray inductance, enabling peak discharge currents of tens to hundreds of amps within nanoseconds. The PCB is designed to minimize power loops and common source inductance while offering mounting flexibility for laser diodes or alternative loads. To enhance user-friendliness, all boards ship with EPC9989 interposer PCBs, featuring various footprints to accommodate a variety of laser diodes or other loads. Customers can choose one that meets their needs to evaluate the GaN solutions. The EPC9179/81/80 boards are triggered from 3.3V logic or differential logic signals such as LVDS. For single-ended inputs, the boards can operate with input voltages down to 2.5V or 1.8V with a simple modification. EPC provides full schematics, BOM, PCB layout files and a quick start guide on its website.09.01.2024 14:30:00Jannews_2024-01-15_17.jpg\images\news_2024-01-15_17.jpghttps://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3156/gan-fets-enable-75-231-ampere-laser-diode-control-in-nanoseconds-for-advanced-automotive-autonomyepc-co.com
Collaboration on Magnetic Components for ConvertersITG Electronics has announced a collaboration with...11729Industry NewsCollaboration on Magnetic Components for ConvertersITG Electronics has announced a collaboration with Renesas Electronics to develop a generation of magnetic components for 54V/48V to 12V converters. The effort specifically targets applications in the artificial intelligence (AI) and data center power conversion sectors. The collaboration's latest initiative involves 48V onboard power delivery solutions. The solutions – called Renesas P/N RAA228006/RAA226054 and ITG P/N SLA694719C-2R2MHF by the two companies – can deliver 1,000 W per phase. ITG P/N SLA694719C-2R2MHF is rated 0.65mOhm and achieves an elevated current rating of 42 A. Compared to conventional 750W transformers, ITG's enhanced version provides a 46% reduction in transformer DC resistance (DCR), resulting in substantially reduced overall power loss.09.01.2024 11:30:00Jannews_2024-01-15_6.jpg\images\news_2024-01-15_6.jpghttps://itg-electronics.com/en/series/913itg-electronics.com
Professional Test & Measurement Solutions at APECAPEC 2024 will be held in Long Beach, California o...11725Industry NewsProfessional Test & Measurement Solutions at APECAPEC 2024 will be held in Long Beach, California on February 25-29, 2024. Professional power test solution provider-ITECH Electronics, will show on APEC 2024 with their power electronics testing instruments and solutions, we cordially invite you to stop by ITECH booth No.1659. ITECH will show all series of T&M instrument products. ITECH new upgraded AC source products such as IT7800, IT7900 and IT7900P will appear at the show, help you challenge MW level test. And you will see our star product IT6000C Bi-directional DC power supply, which adopts the third generation SiC-base technology and integrates the source and sink function in one unit. Also, we will show another explosive product IT-M series, featuring "compact structure" and "high power density", which give users a wide range of choices to meet the diverse testing demands. The IT2800 SMU, winner of three T&M awards in 2023, will also make its debut at APEC. ITECH has brought over 1000 models products to global market, always focusing on innovation, owning 140+ patents and products have been awarded by top international media. ITECH is always stepping forward with their state-of-the-art testing technology. Meet ITECH on APEC 2024!09.01.2024 07:00:00Jannews_2024-01-15_2.jpg\images\news_2024-01-15_2.jpghttps://www.itechate.com/en/itechate.com
EC-Q200 compliant Planar Signal BMS Transformer for High Voltage ApplicationsMeeting the need for planar technology that can pr...11773Product ReleaseEC-Q200 compliant Planar Signal BMS Transformer for High Voltage ApplicationsMeeting the need for planar technology that can provide reliable and safe communication in a growing group of high voltage electric vehicle (EV) and other high energy storage systems, Bourns' AEC-Q200 compliant SM91806 Planar Signal BMS Transformer meets basic electric insulation requirements per IEC 60664-1, IEC 61558-1 and IEC 62368-1 standards. Planar-style signal transformers have been introduced to increase design flexibility and robustness. They are also known to deliver cost efficiency and reliability advantages over conventional wire wound transformer designs due to their multilayer PCB isolation and full automation. Offering these benefits and more, Bourns' planar signal BMS transformer features a working voltage up to 1000 V<sub>DC</sub>, superior clearance/creepage distance features and complies with Overvoltage Category II. It also provides a partial discharge level up to 1200 V for ESS usage.09.01.2024 06:30:00Jannews_2024-02-15_7.jpg\images\news_2024-02-15_7.jpghttps://www.bourns.com/news/press-releases/pr/2024/01/09/bourns-engineers-industry's-first-planar-signal-bms-transformerbourns.com
Industry Veteran now CEOQPT has appointed Rupert Baines as its CEO with ef...11753PeopleIndustry Veteran now CEOQPT has appointed Rupert Baines as its CEO with effect from 1 April 2024. He is a veteran of the semiconductor industry with C-level roles including CEO of UltraSoC (sold to Siemens) and CMO of Codasip. QPT is active in developing next generation GaN-based motor drives.08.01.2024 14:00:00Jannews_2024-02-01_8.jpg\images\news_2024-02-01_8.jpghttps://www.q-p-t.com/press-releases/rupert-baines-appointed-ceo-at-qptq-p-t.com
Power Conversion Company buys Provider of Transformers, Inductors and PD EquipmentAstrodyne has acquired Powertronix, a provider of ...11770Industry NewsPower Conversion Company buys Provider of Transformers, Inductors and PD EquipmentAstrodyne has acquired Powertronix, a provider of toroidal transformers, AC and DC inductors and power distribution equipment. Powertronix provides power transformers, specialty transformers, power solutions, and AC and DC inductors for highly demanding OEMs in the medical, industrial, and semiconductor fabrication equipment markets, worldwide. Powertronix is particularly adept at guiding customers through complex qualification processes and developing special solutions that meet the safety requirements of highly regulated applications, such as robotic-assisted surgery. Powertronix will remain headquartered in Foster City, California and will continue to use the Powertronix brand. The terms of the transaction were not disclosed.08.01.2024 09:00:00Jannews_2024-02-15_4.jpg\images\news_2024-02-15_4.jpghttps://www.astrodynetdi.com/news/astrodyne-tdi-expands-portfolio-through-acquisition-of-powertronixastrodynetdi.com
650V Super Junction N-Channel MOSFETsCentral Semiconductor announces the introduction o...11744Product Release650V Super Junction N-Channel MOSFETsCentral Semiconductor announces the introduction of several 650V Super Junction N-Channel MOSFETs designed for high-voltage, fast-switching applications. The latest additions, available in TO-220FP packaging, include the devices CDMSJ2204.7-650 (4.7A), CDMSJ2207.3-650 (7.3A), CDMSJ22010-650 (10A), CDMSJ22013.8-650 (13.8A) and CDMSJ22029-650 (29A). The Super Junction MOSFETs feature a die structure, which supports high-voltage with comparatively low on-resistance and fast switching speeds. The are claimed to provide low switching losses, innately high reliability die design, and increased power output in applications like electric vehicle inverter, and solar.04.01.2024 17:30:00Jannews_2024-01-15_20.jpg\images\news_2024-01-15_20.jpghttps://my.centralsemi.com/paraSearch/parametricSearch_v1_1.php?task=bldPartTable2&PGroup=30&subGroup=30centralsemi.com
Developing a Wireless BMS Production Test SolutionRohde & Schwarz, together with ADI, has developed ...11726Industry NewsDeveloping a Wireless BMS Production Test SolutionRohde & Schwarz, together with ADI, has developed an ultra-compact automated test equipment (ATE) system for wireless battery management systems (wBMS). With this test setup, the necessary wBMS module calibration, receiver, transmitter and DC tests can be conducted fast and executed reliably for verification in the lab as well as for production tests for high yield. It consists of the R&S CMW100 radio communication tester, the R&S WMT wireless automated testing software framework, and the new R&S ExpressTSVP universal test and measurement platform. Due to radiated test, the device under test (DUT) is placed in an interference-free environment such as the R&S TS7124 RF shielded box. For RF robustness testing, Rohde &Schwarz and ADI worked together to get an off-the-air recording solution to capture real-world RF spectrum. They then played it back in the lab to confirm the correct operation of wBMS in demanding RF environments. This solution from Rohde & Schwarz allows a realistic, repeatable, and efficient verification of wireless devices. During several test drives in various complex RF environments, an R&S FSW signal and spectrum analyzer monitored the RF spectrum and sent it to an R&S IQW wideband I/Q data recorder. For playing back the recorded spectrum profiles in a lab, the R&S IQW is connected to an R&S SMW200A vector signal generator. From the development lab to the production line, Rohde & Schwarz offers a comprehensive portfolio of test solutions for wBMS.04.01.2024 08:00:00Jannews_2024-01-15_3.jpg\images\news_2024-01-15_3.jpghttps://www.rohde-schwarz.com/about/news-press/all-news/rohde-schwarz-leverages-technology-from-analog-devices-to-develop-a-wireless-battery-management-system-production-test-solution-press-release-detailpage_229356-1447746.htmlrohde-schwarz.com
FRD Super Junction MOSFETs with RDS(on) of 95 mOhmAlpha and Omega Semiconductor Limited (AOS) has re...11733Product ReleaseFRD Super Junction MOSFETs with R<sub>DS(on)</sub> of 95 mOhmAlpha and Omega Semiconductor Limited (AOS) has released two aMOS5 600V FRD Super Junction MOSFETs. aMOS5 is AOS's high voltage MOSFET platform, designed to meet the high efficiency and high-density needs of servers, workstations, telecom rectifiers, solar Inverters, EV charging, motor drives and industrial power applications. The design of today's mid-high power switched-mode power supply (SMPS) and solar inverter systems boil down to four major challenges: higher efficiency, higher density, lower system costs, and uncompromised robustness. High Voltage Super Junction MOSFETs are well-suited for topologies such as single/interleaved/dual boost/CrCM TP PFCs, LLC, PSFB, multi-level NPC/ANPC and so forth. aMOS5 is a High Voltage Super Junction solution tailored for fast switching, ease-of-use and robustness in mission-critical applications. aMOS5 FRD FETs are engineered with an intrinsic body diode to handle hard commutation scenarios, when the freewheeling body diode is in reverse recovery due to abnormal operations, such as short-circuit or start-up transients. The two products released, the AOK095A60FD (TO-247) and AOTF125A60FDL (TO-220F), are 600V FRD FETs with 95mOhm and 125mOhm maximum R<sub>DS(on)</sub>, respectively. In tests conducted by AOS engineers the body diodes of these two FRD FETs have survived high di/dt under abnormal system conditions, even at elevated junction temperatures of up to 150°C. Additionally, AOS tests have shown that these devices' operate with a noticeably lower turn-off energy (Eoff) than standard solutions, which contributes to higher efficiency in light or mid-load conditions.03.01.2024 06:30:00Jannews_2024-01-15_9.jpg\images\news_2024-01-15_9.jpghttps://aosmd.com/sites/default/files/res/datasheets/AOK095A60FD.pdfaosmd.com
Michael Sleven Appointed Vice President Sales EuropeSanan Semiconductor has announced a major step tow...11703PeopleMichael Sleven Appointed Vice President Sales EuropeSanan Semiconductor has announced a major step towards strengthening its position in innovative, high-quality solutions with wide bandgap semiconductor materials with the appointment of renowned power electronic engineer Michael Sleven as Vice President Sales Europe. Anticipating significant growth in the European market, Sanan Semiconductor has chosen to boost its top management team with the recruitment of a specialist in the power electronics community who has over 25 years' experience in the sector in various management positions. Michael joins the company after his time with LEM Europe GmbH as Managing Director and Head of Sales. Before that, Michael was responsible for business development and sales for power semiconductors (based on Silicon IGBTs and SiC MOSFETs) at Hitachi Europe. The main market sector here was automotive and industry applications in Europe. Michael also spent more than a decade at Infineon AG in a number of key positions, including Head of R&D High Power Semiconductor Module Development. The appointment comes at a time when Sanan Semiconductor is undertaking a recruitment drive in its SiC and GaN team in Europe with over 10 positions available. The company is looking for sales managers, field application engineers, R&D engineers and customer service team member. The recruits will also support the development of innovative wide bandgap semiconductors that meet the increasing electrification needs of the automotive industry, as well as power conversion in green energy applications. 21.12.2023 06:00:00Decnews_2024-01-01_1.jpg\images\news_2024-01-01_1.jpghttps://www.sanan-semiconductor.com/ensanan-semiconductor.com
 eFuses Feature Continuous Current up to 100 ADigiKey announced that the EFUSE-48V100A reference...11719Product Release eFuses Feature Continuous Current up to 100 ADigiKey announced that the EFUSE-48V100A reference design product from Vishay is now available for purchase globally from DigiKey. The Vishay eFuse features TrenchFET MOSFETs and is designed to handle continuous current up to 100 amps. It can operate continuously at maximum current with less than 14 watts of losses without requiring active cooling. The eFuse also features a pre-charge function, continuous current monitoring and overcurrent protection. "The eFuse concept is an innovative trend that protects both the user and the hardware in high power applications, and we're excited to partner with Vishay to launch this new product," said Mike Slater, vice president of global business development at DigiKey. "With the steady increase in 48-volt eMobility applications, semiconductor-based resettable fuses like the EFUSE-48V100A are ideal for replacing mechanical relays, contactors and non-resettable fuses." In addition to safely connecting and disconnecting to 48-volt power sources like high-energy battery packs, the EFUSE-48V100A also features fast disconnect of loads in under 2 micro-seconds, a resettable fuse and an adjustable current limit. It is designed to work in battery management systems, EV test environments, solar installations, industry and home automation, industrial and server computing, networking, telecom and base station power supplies.20.12.2023 11:30:00Decnews_2024-01-01_17.jpg\images\news_2024-01-01_17.jpghttps://www.digikey.de/en/news/press-releases/2023/december/digikey-stocks-new-efuse-reference-design-product-from-vishaydigikey.de
DC/DC Converter for Railway ApplicationsWith a fully regulated single output (24V or other...11737Product ReleaseDC/DC Converter for Railway ApplicationsWith a fully regulated single output (24V or others, e.g. 110V), each product of the RMD150 and RMD300 series from Recom has an input range of 16.8V to 137V continuous and 14.4V to 154V short term, which means that it is suited for all common global railway nominals. Both parts are typically 94% efficient (peak >95%). Both series are integrated in metal cases rated IP-20 for chassis-mounting with natural convection in any mounting position. The parts operate from -40°C to +70°C continuously and up to 85°C for 15 minutes at full without derating power. This meets the rail operating temperature Class OT4 and extended Classes ST1 and ST2. Coming soon, an '-E' version extends the startup temperature down to -50°C. Certifications/compliance include rail standard EN 50155, EMC standards EN 50121-3-2 and IEC/EN 61000-4-2,3,4,5, EN 50124-1 for insulation coordination and EN 45545-2 hazard level HL1-HL3 for railway fire safety. The parts also hold certification to IEC/EC 62368-1 for non-rail applications. Isolation is 3.5kVAC/5kVDC, reinforced grade. The products are designed for Over-Voltage Category III (OVC III) environments up to 2000m altitude and OVCII to 5000m. The parts comply with environmental standards including EN 60068 for temperature testing and EN 61373 for life, shock and vibration in Class B body-mount applications. An internal OR-ing diode is included, allowing the RMD150 and RMD300 to be paralleled for increased power or redundancy or battery charging. Control and monitoring features include e.g. remote ON/OFF, current share pin and output trim.20.12.2023 10:30:00Decnews_2024-01-15_13.jpg\images\news_2024-01-15_13.jpghttps://recom-power.com/en/rec-n-ultra-wide-input-150w-and-300w-dc!sdcs-for-rail-applications-297.html?0recom-power.com
Portfolio of Space-Screened GaN HEMTsTeledyne e2v HiRel announces the addition of new s...11714Product ReleasePortfolio of Space-Screened GaN HEMTsTeledyne e2v HiRel announces the addition of new space screened versions of its popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron mobility transistors (GaN HEMTs). The parts go through NASA Level 1 or ESA Class 1 screening flow and can be brought up to full Level 1 conformance with extra qualification testing if desired. Typical applications include battery management, dc-dc converters, and space motor drives. Two 100 V parts are available with both bottom-side and top-side cooled packaging. One 650 V 30 A GaN-on-Silicon power transistor is available in a bottom-side cooled package. Each device is available with options for EAR99 or European sourcing. Teledyne e2v HiRel's GaN HEMTs feature single wafer lot traceability, extended temperature performance from -55 to +125°C, and low inductance, low thermal resistance packaging.<br>"Our customers have embraced the previous release of 650 V space screened devices, and we have expanded our portfolio to provide additional options. These GaN HEMT products save customers time and money by providing standard devices without the need for additional screening." said Mont Taylor, VP of Business Development for Teledyne e2v HiRel. "Our expanded catalog with standard burn-in make it easy for designers to utilize the latest in GaN in their designs."20.12.2023 06:30:00Decnews_2024-01-01_12.jpg\images\news_2024-01-01_12.jpghttps://www.teledynedefenseelectronics.com/tdeaboutus/Press%20Releases/23%20Dec%20-%20PR%20-%20HiRel%20100V%20Space%20GaN%20FINAL.pdfteledynedefenseelectronics.com
Opening Ceremony and Investor Day at Torrance HQNavitas Semiconductor held an Opening Ceremony and...11710Industry NewsOpening Ceremony and Investor Day at Torrance HQNavitas Semiconductor held an Opening Ceremony and 2023 Investor Day at its new headquarters in Torrance, CA on Tuesday, December 12th. Torrance Mayor, George Chen, and Dustin McDonald from the Office of the Governor of California joined Navitas' CEO and co-founder Gene Sheridan to speak and cut the ribbon, officially opening Navitas' headquarters. Around 100 Navitas staff are employed in Torrance for all aspects of GaN and SiC design, applications, test, characterization and quality plus finance, marketing and HR. Further team growth is planned for 2024, including a $20M investment to add SiC epi-growth capability for strategic manufacturing expansion. The investor meeting began with Mr. Sheridan's recap on a year of significant growth for Navitas, with a doubling of revenue, a $92M capital raise, four major new technology platforms and an update on Navitas' mission to 'Electrify Our World&trade;'. Then, Mr. Sheridan outlined a $1.3T electrification market opportunity as GaN and SiC enable and accelerate our transition away from fossil fuels to a carbon-neutral, full-electrified world, envisaged as 'Planet Navitas'.<br>Dan Kinzer, co-founder and COO/CTO then introduced technology platforms including Gen-4 GaNSense half-bridges for motor drive and mobile fast chargers, GaNSafe – a protected GaN powertrain, GaNSense Control, and a bi-directional GaN power IC platform with up to 9x smaller chip size than legacy silicon MOSFETs or IGBTs. Sid Sundaresan, SVP for the GeneSiC product line added more detail on the Gen-3 Fast SiC platform.19.12.2023 13:00:00Decnews_2024-01-01_8.jpg\images\news_2024-01-01_8.jpghttps://navitassemi.com/navitas-opening-ceremony-and-investor-day-2023-at-torrance-hq/navitassemi.com
Donation for Educational InitiativeVincotech is carrying on its holiday tradition of ...11713Industry NewsDonation for Educational InitiativeVincotech is carrying on its holiday tradition of donating to a good cause in lieu of sending gifts to customers. The company's partner in philanthropy, Plan International Germany, is to receive a €12,000 grant from Vincotech on behalf of its workforce and customers. The money will fund a drive to further girls' education in Malawi.<br>This Plan International Germany project addresses the educational challenges faced by young people in Malawi, particularly girls in impoverished rural areas. Much of Malawi's population – 70 percent – lives below the poverty line. With traditional role models still holding sway, just 21 percent of girls finish secondary school. Plan International Germany aims to boost attendance and graduation rates by providing scholarships, improving sanitary facilities, and creating a mentoring program to guide and support girls on their way through school.<br>"Educating underprivileged girls is a catalyst for positive change, individual empowerment, community development, and societal progress. A good education has far-reaching benefits that extend beyond the individual, impacting families, communities, and entire nations," says Vincotech CEO Eckart Seitter. "By taking part in a project to provide financial assistance, improve schools, and mentor kids, we hope to afford girls in Malawi better opportunities and a brighter future."18.12.2023 16:00:00Decnews_2024-01-01_11.jpg\images\news_2024-01-01_11.jpghttps://www.vincotech.com/news/company-news/article/vincotech-donates-eur12000-to-educational-initiative.htmlvincotech.com
Synchronous 34V Input Buck Switching Regulator ControllerNisshinbo Micro Devices has launched the NC2780AK ...11776Product ReleaseSynchronous 34V Input Buck Switching Regulator ControllerNisshinbo Micro Devices has launched the NC2780AK series switching regulators intended for consumer, industrial and automotive applications. The NC2780AK has an input voltage range from 4.0 to 34V and an externally adjustable output voltage from 0.7 to 5.3V. An additional external high-side and low-side N-Channel MOSFET and some passive components are required to complete the buck switching regulator controller. The oscillator frequency is adjustable from 250kHz to 1MHz using an external resistor, or it can be synchronised with an external clock to minimise common noise issues when using multiple switching regulators in the power supply. The phase compensation can also be adapted through an external resistor and capacitor to ensure stable and reliable operation. Furthermore, the NC2780AK is able to switch automatically from PWM into PFM mode but can be set in a manually fixed PWM mode as well. Built-in safety features include a thermal shutdown mechanism, over- and under-voltage detection circuits. A UVLO feature ensures that the regulator operates within a specified voltage range. The NC270xMA series offers an adjustable soft-start function. An optional function is the Spread Spectrum Clock Generator (SSCG), which intentionally modulates the clock frequency signal for EMC control.18.12.2023 09:30:00Decnews_2024-02-15_10.jpg\images\news_2024-02-15_10.jpghttps://www.nisshinbo-microdevices.co.jp/en/products/dc-dc-switching-regulator/spec/?product=nc2780nisshinbo-microdevices.co.jp
Nanocrystalline Soft Magnetic Materials Tested in the OBCAs part of a joint international research project ...11712Industry NewsNanocrystalline Soft Magnetic Materials Tested in the OBCAs part of a joint international research project with CBMM, innolectric has published a study on increasing the efficiency of charging components using nanocrystalline magnetic materials. Innovative soft magnetic cores with niobium were analyzed in direct application in the innolectric On-Board Charger. The results of the study are now available. Felix Burmeister, system engineer responsible for the project at innolectric, was already confident during the tests in the in-house laboratory: "Whether on land or water – our customers already cover a very wide range of different vehicles and fields of application. We want to offer them a product that offers great added value across its many properties. We are delighted to have gained a partner with a large network in CBMM, with whom we can take our technology a decisive step forward. We are excited to see what new ways of optimization the new magnetic materials will enable, first in our laboratory and later in the field!" The results of the study show that innolectric is able to successfully reduce the size and weight of the common mode chokes (CMC) for use in their On-Board Charger by using nanocrystalline materials. This also represents a major step for the further development of charging components in the innolectric portfolio. One of the key findings is that, despite a significant reduction in core volume of more than 50 % and minimization of weight by over 60 %, there was no loss of efficiency or electromagnetic compatibility. In a direct comparison with conventional ferrite-based magnets, the nanocrystalline material therefore performs significantly better when used in the field of electromobility.<br>Visit https://innolectric.ag/research-project-on-innovative-magnetic-materials/?lang=en to get to the white paper.14.12.2023 15:00:00Decnews_2024-01-01_10.jpg\images\news_2024-01-01_10.jpghttps://innolectric.ag/nanocrystalline-soft-magnetic-materials-tested-in-the-obc/?lang=eninnolectric.ag
APEC 2024 Plenary Session Features Renowned Industry ExpertsThe annual Applied Power Electronics Conference wi...11711Event NewsAPEC 2024 Plenary Session Features Renowned Industry ExpertsThe annual Applied Power Electronics Conference will mark its 2024 event with an opening Plenary Session on Monday afternoon, February 26. The four-hour session will consist of six presentations delivered by visionaries representing industry and academia addressing topics of interest and concern to engineers engaged in applied power electronics technology. The following is lineup of Plenary Session presenters and their topics:<br>-"Surgical Energy: Connecting Power Electronics to Patients – Literally!" by Daniel Friedrichs, Senior Principal Engineer, Minnetronix Medical<br>-"Opportunities, Progress and Challenges in High-Frequency Power Conversion" by David Perreault, Ford Professor of Engineering, Massachusetts Institute of Technology<br>-"Innovating for Sustainability and Profitability: How Innovations in Efficiency Enable us to do Good for the Environment While Doing Well as a Business" by Balu Balakrishnan, Chairman and CEO, Power Integrations<br>-"The Drive for Silicon Carbide – A Look Back and the Road Ahead" by Gregg Lowe, CEO, Wolfspeed<br>-"Fusion Energy is Coming: The Key Role of Power Electronics to Commercial Fusion" by AJ Kantor, Chief of Staff and Matthew C. Thompson, Vice President of Systems Engineering, Zap Energy<br>-"The Future of AI Requires Efficient Power Delivery inside the Processor" by Francesco Carobalante, Director Corporate Strategy & Ventures, Intel Corporation<br>The APEC 2024 conference and exposition, running February 25-29 at the Long Beach California Convention Center, continues its long-standing tradition of addressing issues of immediate and long-term interest to the practicing power electronics engineer.14.12.2023 14:00:00Decnews_2024-01-01_9.jpg\images\news_2024-01-01_9.jpghttps://apec-conf.org/technical-program/plenaryapec-conf.org
Time-of-Flight Sensor Boosts Ranging Performance and Power SavingSTMicroelectronics' VL53L8CX, the latest-generatio...11700Product ReleaseTime-of-Flight Sensor Boosts Ranging Performance and Power SavingSTMicroelectronics' VL53L8CX, the latest-generation 8×8 multizone time-of-flight (ToF) ranging sensor, delivers a range of improvements including greater ambient-light immunity, lower power consumption, and enhanced optics. ST's direct-ToF sensors combine a 940nm vertical cavity surface emitting laser (VCSEL), a multizone SPAD (single-photon avalanche diode) detector array, and an optical system comprising filters and diffractive optical elements (DOE) in an all-in-one module that outperforms conventional micro lenses typically used with similar alternative sensors. The sensor projects a wide square field of view of 45° x 45° (65° diagonal) and receives reflected light to calculate the distance of objects up to 400cm away, across 64 independent zones, and up to 30 captures per second. The VL53L8CX boosts ranging performance with a new-generation VCSEL and advanced silicon-based meta-optics. Compared with the current VL53L5CX, the enhancements increase immunity to interference from ambient light, extending the sensor's maximum range in daylight from 170cm to 285cm and reducing power consumption from 4.5mW to 1.6mW in low-power mode.14.12.2023 10:30:00Decnews_2023-12-15_18.jpg\images\news_2023-12-15_18.jpghttps://newsroom.st.com/media-center/press-item.html/n4595.htmlst.com
CMOS-Compatible 200mm Process TechnologyCEA-Leti has developed a 200mm gallium nitride/sil...11707Industry NewsCMOS-Compatible 200mm Process TechnologyCEA-Leti has developed a 200mm gallium nitride/silicon (GaN/Si) process technology compatible with CMOS cleanrooms that preserves the high performance of the semiconductor material and costs less than existing GaN/SiC technology. In one of nine presentations at IEDM 2023, the institute said that current GaN high-electron-mobility-transistor (HEMT) technologies used in telecom or radar applications come on small GaN/SiC substrates and require processing in dedicated cleanrooms. The SiC substrates used to grow GaN layers are very expensive and available only in relatively small size. This R&D project developed GaN/silicon technology (GaN/Si) on 200mm and later for 300mm wafer diameters in CMOS-compatible cleanrooms to reduce substrate cost and benefit from existing high-performance cleanroom facilities. As a result, CEA-Leti's GaN/Si technology performance at 28 GHz is gaining ground on GaN/SiC technology in terms of power density. "Our goal was to reach existing state-of-the-art GaN HEMT performance at ~30 GHz with a 200mm CMOS- compatible GaN/Si technology and to compete with GaN/SiC technology," said Erwan Morvan, CEA-Leti scientist and lead author of the paper, "6.6W/mm 200mm CMOS Compatible AlN/GaN/Si MIS-HEMT with In-Situ SiN Gate Dielectric and Low Temperature Ohmic Contacts". "This work demonstrates that CMOS-compatible 200mm SiN/AlN/GaN MIS-HEMT on silicon technology is a promising candidate for applications like 5G/6G infrastructure, satcom, radar for UAV detection or earth observation. It should enable less expensive devices while keeping high power density, high efficiency, light weight and compactness," he said.14.12.2023 10:00:00Decnews_2024-01-01_5.jpg\images\news_2024-01-01_5.jpghttps://www.leti-cea.com/cea-tech/leti/englishleti-cea.com
POWER2GO – Powerbank thought BIGPOWER2GO is basically a maxi version of a power ba...11745Product ReleasePOWER2GO – Powerbank thought BIGPOWER2GO is basically a maxi version of a power bank offered by BMZ Group. It offers independence from the power grid, both in the event of a power failure and far away from the nearest power socket. Weighing 23kg and measuring 452 x 373 x 192 mm, the portable energy storage unit offers a constant, long-term power output of 2,500W and can even operate devices with peak outputs of up to 5,700W without any problems. The energy density of the 2.5kWh power storage device is specified with 125Wh/kg and the protection class is according to IP 65, which certifies that the device is dust-proof and waterproof, and the fact that it does not require a fan and therefore operates absolutely quietly. POWER2GO will be launched in two versions: POWER2GO LIFE addresses discerning users and, in addition to the earthed socket, offers additional connections (10W USB A, 100W USB C and 120W/12 V on-board power socket), a display and a light while POWER2GO WORK is intended for use in demanding work environments. With the same performance features, the focus here is on robustness and ease of use. The tubular frame around the housing provides the device with special protection. The POWER2GO beats a conventional ICE-based generator not only in terms of size and weight. POWER2GO is quiet and emission-free.13.12.2023 18:30:00Decnews_2024-01-15_21.jpg\images\news_2024-01-15_21.jpghttps://power.bmz-group.com/enpower.bmz-group.com
1200V SiC MOSFET Power Modules in Half-Bridge PackagesSemiQ Inc has expanded its QSiC power modules rang...11738Product Release1200V SiC MOSFET Power Modules in Half-Bridge PackagesSemiQ Inc has expanded its QSiC power modules range with the introduction of a series of 1200V SiC power MOSFETs in half-bridge packages. Featuring a breakdown voltage of more than 1400V the QSiC modules support high-temperature operation up to T<sub>j</sub> = 175°C. In addition, the modules are claimed to "exhibit industry-leading gate oxide stability and long gate oxide lifetime, avalanche unclamped inductive switching (UIS) ruggedness and long short-circuit withstand time". With a solid foundation of high-performance ceramics, the SiC modules are suitable for EV charging, on-board chargers (OBCs), DC/DC converters, E-compressors, fuel cell converters, medical power supplies, photovoltaic inverters, energy storage systems, solar and wind energy systems, data center power supplies, UPS/PFC circuits, Vienna rectifiers and other automotive and industrial applications. To ensure that each module has a stable gate threshold voltage and high-quality gate oxide, SemiQ's modules undergo gate burn-in testing at the wafer level. Besides the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) allow achieving the required automotive and industrial grade quality levels. The devices also have extended short-circuit ratings. All modules have undergone testing exceeding 1350V. These 1200V SiC MOSFET operate with an R<sub>DS(on)</sub> of 5m&#8486;, 10m&#8486;, and 20m&#8486; with current ratings of 383A (B3), 214A (B2) or 173A (B3) and 102A (B2).13.12.2023 11:30:00Decnews_2024-01-15_14.jpg\images\news_2024-01-15_14.jpghttps://semiq.com/module-packages/semiq.com
160 V 2-Channel Gate Driver ICs for Battery-Powered ApplicationsInfineon Technologies announced the expansion of i...11717Product Release160 V 2-Channel Gate Driver ICs for Battery-Powered ApplicationsInfineon Technologies announced the expansion of its MOTIX&trade; family of products for automotive and industrial motor control applications. To further expand the advanced product family, Infineon introduces the 2-channel MOTIX gate driver ICs 2ED2742S01G, 2ED2732S01G, 2ED2748S01G, and 2ED2738S01G. The 160 V Silicon-on-Insulator (SOI) gate drivers are small, powerful, and cost-effective gate drive solutions with latch-up immunity. They are designed for battery powered applications, including cordless power tools, multicopters, drones, and light electric vehicles with batteries up to 120 V. Infineon's SOI technology eliminates the parasitic thyristor structure and provides excellent robustness and immunity to negative transient voltages at the VS pin. The 2-channel gate drivers have integrated monolithic bootstrap diodes that supply the high-side bootstrap capacitor externally, further reducing system-level BOM costs. The devices come in a compact 3 x 3 mm<sup>2</sup> VSON10 package and are available in both half-bridge (HB) and high-side + low-side (HS + LS) configurations as well as two different source/sink currents to drive n-channel MOSFETs in various applications.<br>The 2ED2732S01G and the 2ED2742S01G deliver a source current of 1 A and a sink current of 2 A, while the 2ED2738S01G and the 2ED2748S01G deliver a source current of 4 A and a sink current of 8 A. All products feature independent undervoltage lockout (UVLO) on both V <sub>CC</sub> and V <sub>B</sub> pins – the HB products also integrate shoot-through protection (STP). In addition, the MOTIX 160 V solutions are fully qualified for industrial applications according to the relevant JEDEC78/20/22 tests.13.12.2023 09:30:00Decnews_2024-01-01_15.jpg\images\news_2024-01-01_15.jpghttps://www.infineon.com/cms/en/about-infineon/press/market-news/2023/INFGIP202312-035.htmlinfineon.com
Top Management of the SCHURTER GroupLars Brickenkamp has taken over the position of CE...11706PeopleTop Management of the SCHURTER GroupLars Brickenkamp has taken over the position of CEO of SCHURTER Holding AG and has been steering the fortunes of the SCHURTER Group since December 1, 2023. Lars Brickenkamp holds a degree in electrical engineering and has years of experience in leading positions in the electronics industry. His proven track record and expertise predestine him to lead SCHURTER into a promising future. Lars Brickenkamp's last place of work was in Hong Kong.13.12.2023 09:00:00Decnews_2024-01-01_4.jpg\images\news_2024-01-01_4.jpghttps://www.schurter.com/en/news/new-top-management-of-the-schurter-groupschurter.com
Strengthening the Scandinavian PresenceWith the establishment of Würth Elektronik Danmark...11705Industry NewsStrengthening the Scandinavian PresenceWith the establishment of Würth Elektronik Danmark A/S, customers from Denmark, Greenland and the Faroe Islands now have a direct point of contact for their electronic and electromechanical component needs. Previously, these markets were also served by the Swedish subsidiary. Würth Elektronik Danmark A/S is based in the north of Aarhus. A team headed by CEO Ole Sanggaard Knudsen, Finance Manager Gunhild Nors and Office Manager Claire Boelstoft is being set up there to provide even better support for the Danish electronics industry. "We would like to thank our colleagues in Germany and Sweden for their support in establishing our company," says Knudsen. "The fact that we can take this step comes from the trust our Danish customers have placed in us. Würth Elektronik is established here as a brand and now also as a company."13.12.2023 08:00:00Decnews_2024-01-01_3.jpg\images\news_2024-01-01_3.jpghttps://www.we-online.com/en/news-center/press/press-releases?d=denmarkwe-online.com
eBook about EV and Connected TransportationTogether with TE Connectivity Mouser Electronics h...11742Product ReleaseeBook about EV and Connected TransportationTogether with TE Connectivity Mouser Electronics has released an eBook exploring EVs and the rapidly evolving landscape of connected transportation. The book includes e. g. charging inlets for commercial and industrial vehicles, enabling safe, fast, and secure charging of up to 10,000 mating cycles while charging at 250V<sub>AC</sub> (at 32A) and 1000V<sub>DC</sub> (at 200A) for use with heavy and medium-duty trucks, buses, two-wheelers, agriculture, construction, and recreational vehicles. The eBook also comprises PowerTube connectors for high-power applications in hybrid and electric industrial and commercial vehicles. The ECPx50B high voltage contactors are built for handling large electrical loads, up to 580A continuous current, depending on wire size and temperature, and offer 1000 V switching voltage of up to 1500VDC with a continuous carry current of up to 500A. These contactors are designed for control in high-voltage environments such as battery energy storage systems, solar inverters, and EV charging applications. Furthermore, this eBook highlights emerging engineering topics such as V2X ecosystems, fleet telematics with 5G, the future of high-powered EV charging and other design trends providing insights into the EV and connected transportation eMobility revolution. The book describes the EV evolution from transportation modes to dynamic data hubs, as the rise of fleet telematics and the integration of 5G turn vehicles into roaming data centres including a deep dive into the emerging V2X communication standards for the next generation of EVs.12.12.2023 15:30:00Decnews_2024-01-15_18.jpg\images\news_2024-01-15_18.jpghttps://te.mouser.com/electric-vehicles/ev-and-connected-transportation-3/te.mouser.com
AC-DC Power Supplies for Industrial, IoT, and EV ApplicationsCUI announced the addition of three, chassis mount...11722Product ReleaseAC-DC Power Supplies for Industrial, IoT, and EV ApplicationsCUI announced the addition of three, chassis mount ac-dc power supplies housed in compact metal cases with the VGS-500, VGS-350D, and VGS-200E series line of products. The ultra-slim designs make the power supplies appropriate for industrial and IoT use in harsh environments for inductive load applications such as motors, relays, and contactors. The power supplies are also well suited for the growing deployment of electric vehicle charges. With universal input voltage 85-305 VAC or 120-430 VDC and a wide operating temperature (-40 C to +85 C), the products from CUI, exceed competitors in the space both in voltage and temperature range. The VGS-200E also has a better MTBF rating over competing products, up to 300,000 hours. All products feature bottom and side installation and are certified to the EN 62368 safety standard with an operating altitude of up to 5,000m.12.12.2023 14:30:00Decnews_2024-01-01_20.jpg\images\news_2024-01-01_20.jpghttps://www.cui.com/news/press-releases/cui-expands-its-line-of-ac-dc-power-supplies-for-industrial-iot-and-ev-applicationscui.com
Gate Drivers for 62 mm SiC and IGBT ModulesPower Integrations announced a family of plug-and-...11720Product ReleaseGate Drivers for 62 mm SiC and IGBT ModulesPower Integrations announced a family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation. SCALE<sup>TM</sup>-2 2SP0230T2x0 dual-channel gate drivers deploy short-circuit protection in less than two microseconds, protecting the compact SiC MOSFETs against damaging over-currents. The drivers also include advanced active clamping (AAC) to protect the switches against over-voltage during turn-off, enabling higher DC link operating voltages.<br>Thorsten Schmidt, product marketing manager at Power Integrations, commented: "The 2SP0230T2x0 gate drivers are flexible; the same hardware can be used to drive either SiC MOSFET or IGBT modules. This reduces both system design and sourcing challenges, and the plug-and-play approach speeds development."<br>Ideal for applications such as railway auxiliary converters, offboard EV chargers and STATic synchronous COMpensator (STATCOM) voltage regulators for the power grid, 2SP0230T2x0 gate drivers are based on Power Integrations' proven SCALE-2 technology, resulting in higher levels of integration, smaller size, more functionality and enhanced system reliability. Power Integrations' compact 134 x 62 mm 2SP0230T2x0 provides reinforced isolation at 1700 V, enabling use for up to 1700 V operation; this is 500 V higher than conventional drivers, which are typically limited to 1200 V.12.12.2023 12:30:00Decnews_2024-01-01_18.jpg\images\news_2024-01-01_18.jpghttps://investors.power.com/news/news-details/2023/Power-Integrations-Launches-Gate-Drivers-for-62-mm-SiC-and-IGBT-Modules-with-Fast-Short-Circuit-Protection/default.aspxpower.com
High-Power Centre of Excellence in UK to accelerate Electrification and SustainabilityArrow Electronics and its engineering services com...11727Industry NewsHigh-Power Centre of Excellence in UK to accelerate Electrification and SustainabilityArrow Electronics and its engineering services company, eInfochips, have announced the establishment of a High-Power Centre of Excellence (CoE) in Swindon, United Kingdom. The purpose of this High-Power CoE is to assist customers in the development of high-power solutions, a critical component in advancing electrification and sustainability initiatives. The CoE will address the complexities associated with high-power electronics design, including lack of power expertise, stringent functional safety and reliability requirements, intricate PCB layout, and the necessity for costly testing equipment. Therefore the CoE is equipped with a high-power lab in Swindon and an experienced engineering team from eInfochips. The goal is to empower innovators to navigate the complexities of high-power electronics design effectively. The High-Power CoE will design products for all customers of Arrow and its subsidiaries, such as Richardson RFPD.12.12.2023 09:30:00Decnews_2024-01-15_4.jpg\images\news_2024-01-15_4.jpghttps://www.einfochips.com/high-power-centre-of-excellence/einfochips.com
One of the Most Sustainable Companies GloballyInfineon Technologies has once again been included...11708Industry NewsOne of the Most Sustainable Companies GloballyInfineon Technologies has once again been included in the Dow Jones Sustainability World Index, as announced by S&P Global last Friday in New York, USA. "We are proud that Infineon has been chosen as one of the world's most sustainable companies for the 14<sup>th</sup> consecutive year", said Elke Reichart, Member of the Board and Chief Digital Transformation Officer, responsible for Sustainability at Infineon. "Moreover, we feel strongly encouraged to keep up our efforts at making further progress towards our ambitious sustainability goals. Therefore, we are continuously developing our processes and drive innovation within the company and beyond. The green and the digital transformation go hand in hand." Infineon is well on track with the implementation of ist CO<sub>2</sub>-neutrality goal by 2030 (Scope 1 and 2). To date emissions have been reduced by 56.8 percent compared with the base year of 2019 while approximately doubling the business at the same time. As a leading manufacturer of semiconductors for power electronic systems and the IoT, Infineon makes a significant contribution to decarbonization on the way to a net-zero society. Infineon's products and solutions help to save 34 times more CO <sub>2</sub> emissions over the course of their usage than were created during their production.11.12.2023 11:00:00Decnews_2024-01-01_6.jpg\images\news_2024-01-01_6.jpghttps://www.infineon.com/cms/en/about-infineon/press/press-releases/2023/INFXX202312-037.htmlinfineon.com
HEMT Family in Easy-to-Use Flip Chip QFN PackagingInnoscience Technology has announced a range of lo...11716Product ReleaseHEMT Family in Easy-to-Use Flip Chip QFN PackagingInnoscience Technology has announced a range of low voltage discrete HEMTs in FCQFN packaging. Rated at 40 V, 100 V and 150 V, the 'flip chip' formatting makes it simple for engineers to use.<br>40 V-rated FCQFN devices are available with an on-resistance value of 4.3 m&#8486; (3x4 mm chip size). 100 V HEMTs are offered with R<sub>DS(on)</sub> ratings of 2.8 m&#8486; (3x5 mm) and 1.8 m&#8486; (4x6 mm), while the 150 V-rated parts measuring 4x6 mm are available with 3.9 m&#8486; and 7 m&#8486; R<sub>DS(on)</sub>.<br>The 40 V parts using Innoscience's latest GaN processes achieve performance with figure-of-merit (FOM) values for Q<sub>gg</sub>*R<sub>on</sub> and I<sub>dss</sub>*R<sub>on</sub>. The parts low drain and gate leakage currents enable them to be used in mobile markets and direct-battery-connected applications. Other applications include USB Type C buck-boost converters in laptops. Furthermore, with its latest generation process, Innoscience maintains very tight control of the epitaxy, resulting in a very uniform threshold voltage and on-resistance, leading to a very high wafer yield.<br>100 V devices suit DC/DC conversion at power levels of up to 2 kW, due to their very low on-resistance. When used in parallel configuration, power levels up to 8 kW can be achieved.<br>The 150 V targets industrial applications, including solar installations. They have been designed to be very rugged so they do not need the industry-standard 80% derating to be applied (i.e. they are rated at 100% of their voltage). All the 40 V, 100 V and 150 V HEMTs have been tested to and exceeded JEDEC and the GaN-specific JEP 180 standards.11.12.2023 08:30:00Decnews_2024-01-01_14.jpg\images\news_2024-01-01_14.jpghttps://www.innoscience.com/innoscience.com
GaN FETs in Compact SMD PackagingNexperia announced that its GaN FET devices, featu...11715Product ReleaseGaN FETs in Compact SMD PackagingNexperia announced that its GaN FET devices, featuring high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now available to designers of industrial and renewable energy applications. Building on two decades of expertise in supplying high-volume, high-quality copper-clip SMD packaging, Nexperia is now proud to extend its packaging approach to GaN cascode switches in CCPAK. The GAN039-650NTB, a 33 m&#8486; (typ.) Gallium Nitride (GaN) FET within the CCPAK1212i top-side cooling package, ushers in a new era of wide bandgap semiconductors and copper-clip packaging. This technology offers advantages for renewable energy applications such as solar and residential heat pumps, further enhancing Nexperia's commitment to developing the latest component technology for sustainable applications. It is also suited to a wide spectrum of industrial applications such as servo drives, switched-mode power supplies (SMPS), server, and telecom. Nexperia's CCPAK surface mount packaging uses Nexperia's proven innovative copper-clip package technology to replace internal bond wires. This reduces parasitic losses, optimizes electrical and thermal performance, and improves device reliability. For maximum flexibility in designs, these CCPAK GaN FETs are available in top- or bottom-cooled configurations to further improve heat dissipation.<br>The cascode configuration of the GAN039-650NTB enables it to deliver superior switching and on-state performance, with a robust gate offering high margins against noise.  This feature also simplifies application designs by eliminating the requirement for complex gate drivers and control circuitry, instead allowing them to be conveniently driven using standard silicon MOSFET drivers.11.12.2023 07:30:00Decnews_2024-01-01_13.jpg\images\news_2024-01-01_13.jpghttps://www.nexperia.com/about/news-events/press-releases/Nexperia-now-offers-GaN-FETs-in-compact-SMD-packaging-CCPAK-for-industrial-and-renewable-energy-applicationsnexperia.com
Collaboration in Manufacturing Power DevicesA plan by ROHM and Toshiba Electronic Devices & St...11695Industry NewsCollaboration in Manufacturing Power DevicesA plan by ROHM and Toshiba Electronic Devices & Storage Corporation to collaborate in the manufacture and increased volume production of power devices has been recognized and will be supported by the Ministry of Economy, Trade and Industry as a measure supporting the Japanese Government's target of secure and stable semiconductor supply. ROHM and Toshiba Electronic Devices & Storage will respectively make intensive investments in silicon carbide (SiC) and silicon (Si) power devices, effectively enhance their supply capabilities, and complementally utilize other party's production capacity. ROHM has already announced its participation in the privatization of Toshiba, but this investment did not serve as the starting point for manufacturing collaboration between the two companies. Under intensifying international competition in the semiconductor industry, ROHM and Toshiba Electronic Devices & Storage have been considering collaboration in the power device business for some time, and that resulted in the joint application. ROHM and Toshiba Electronic Devices & Storage will collaborate in manufacturing power devices, through intensive investments in SiC and Si power devices, respectively, toward enhancing both companies' international competitiveness. The companies will also seek to contribute to strengthening the resilience of semiconductor supply chains in Japan.08.12.2023 18:00:00Decnews_2023-12-15_13.jpg\images\news_2023-12-15_13.jpghttps://www.rohm.com/news-detail?newsTabIndex=2rohm.com
1-Cell Li-Ion Battery Protection IC with Temperature Sensor InputNisshinbo Micro Devices has launched the R5668 ser...11739Product Release1-Cell Li-Ion Battery Protection IC with Temperature Sensor InputNisshinbo Micro Devices has launched the R5668 series single-cell Li-Ion battery protection IC with additional safety measures and control functions for applications demanding a higher level of safety and reliability. The R5668 offers an additional input for connecting an external temperature sensor. This sensor measures the battery's temperature periodically during charging and discharging. In case the battery temperature exceeds a critical threshold and a predefined delay time, the IC responds by turning off both the charge and discharge MOSFETs, ensuring the safety of the battery. During this event, the IC switches to continuous temperature measurement mode to closely track the temperature level. This feature enhances the safety and reliability of battery-powered applications, preventing overheating and potential damage. Parameters for the charging and discharging temperature detection, hysteresis, and delay times are specified in the product version options. The R5668 includes a second additional feature known as the Forced Standby Mode, which can be manually activated by connecting the CTLIO pin to a specific voltage or logic level. When enabled, the IC enters a low-power state with minimal current consumption, effectively preventing further battery discharge. This feature is particularly useful when products are shipped or stored for extended periods, ensuring that the battery remains charged and ready for initial use. The forced standby mode is disabled when connecting the device to a charger. The R5668 comes in a small WLCSP-8-P14 package measuring 1.55 x 0.92 x 0.36 mm<sup>3>/sup>.08.12.2023 12:30:00Decnews_2024-01-15_15.jpg\images\news_2024-01-15_15.jpghttps://www.nisshinbo-microdevices.co.jp/en/products/lithium-ion-battery-protection/spec/?product=r5668nisshinbo-microdevices.co.jp
Call for Papers Open – 2024 IEEE Symposium on VLSI Technology and CircuitsCalling all those interested in submitting a paper...11693Event NewsCall for Papers Open – 2024 IEEE Symposium on VLSI Technology and CircuitsCalling all those interested in submitting a paper for the upcoming IEEE Symposium on VLSI Technology & Circuits. The Symposium will be a fully in-person event with live sessions onsite at the Hilton Hawaiian Village to foster networking, with OnDemand access to technical sessions available one week following the Symposium. The 5-day event will include educational Plenary Sessions, Technical Sessions. Evening Panels, Short Courses, Demo Session for outstanding papers, Workshops, SSCS/EDS Women in Engineering and Young Professional events, and Hawaiian Luau Celebration. Online paper submissions now open! Submission Deadline: February 5, 2024.07.12.2023 16:00:00Decnews_2023-12-15_11.jpg\images\news_2023-12-15_11.jpghttps://www.vlsisymposium.org/call-for-papers/vlsisymposium.org
Peter Henry Appointed to Board of DirectorsAnalog Devices announced that its Board of Directo...11709PeoplePeter Henry Appointed to Board of DirectorsAnalog Devices announced that its Board of Directors has appointed Dr. Peter B. Henry as an independent director and member of the Board's Audit Committee effective December 5, 2023. Dr. Henry is currently the Class of 1984 Senior Fellow at the Hoover Institution and Senior Fellow at the Freeman Spogli Institute for International Studies, both at Stanford University. He is also Dean Emeritus of New York University's Leonard N. Stern School of Business. His appointment expands ADI's Board to 13 members. Dr. Henry also leads the Ph.D. Excellence Initiative (PhDEI), a post-baccalaureate program designed to address underrepresentation in economics by mentoring exceptional students from underrepresented backgrounds interested in pursuing doctoral studies in the field. For his founding and leadership of the PhDEI, Dr. Henry received the 2022 Impactful Mentoring Award from the American Economic Association.<br>Dr. Henry received a bachelor's degree in economics from the University of North Carolina at Chapel Hill, a bachelor's degree in mathematics from Oxford University where he was a Rhodes Scholar, and a Ph.D. in economics from the Massachusetts Institute of Technology.07.12.2023 12:00:00Decnews_2024-01-01_7.jpg\images\news_2024-01-01_7.jpghttps://www.analog.com/en/about-adi/news-room/press-releases/2023/12-7-23-adi-appoints-peter-henry-to-its-board-of-directors.htmlanalog.com
Experience the Exciting Plenary Session at APEC 2024The APEC Plenary Session is a long-standing tradit...11689Event NewsExperience the Exciting Plenary Session at APEC 2024The APEC Plenary Session is a long-standing tradition of addressing topics of immediate and long-term interest to the practicing power electronics engineer. The on-trend topics featured during the plenary session are brought to you by invited distinguished professionals followed by an interactive Q&A session. This year's lineup features distinguished professionals who will share their insights on a diverse range of topics, including Medical, Wideband Gap Devices, Fusion energy, opportunities, challenges, and the future of power electronics. Check out the current list of speakers and topics below. As a reminder, early-bird registration savings ends January 8th, so be sure to take advantage of our best deal today!07.12.2023 12:00:00Decnews_2023-12-15_7.jpg\images\news_2023-12-15_7.jpghttps://apec-conf.org/technical-program/plenaryapec-conf.org
Automotive-Grade Shunt-based Sensing SolutionWith the MLX91231 Melexis added a shunt-based sens...11735Product ReleaseAutomotive-Grade Shunt-based Sensing SolutionWith the MLX91231 Melexis added a shunt-based sensing solution to its automotive current sensor range. Meeting functional safety requirements, this IVT (current, voltage, and temperature) device combines high accuracy with the intelligence and flexibility of a digital microcontroller unit. The MLX91231, which is integrated in an 8-pin SOIC package, is tailored for DC/DC converters, battery terminal sensors, low and high-voltage power distribution and disconnection devices. The MLX91231 provides a lower than ±0.25% sensitivity drift error over temperature and lifetime and a 1.5µV input referred offset drift error over the same conditions. It allows closer monitoring and therefore greater optimization of low-voltage systems, such as DC/DC converters, battery terminal sensors (BTS), and power distribution & monitoring in zonal infrastructure. By utilizing an integrated MCU, the MLX91231 delivers advanced functionalities beyond just current measurement. Supplied by a regulated 5V or directly by 12V battery, this IVT sensor provides the current, voltage, and junction temperature readout via a selectable LIN or UART output. A diagnosable overcurrent detection (OCD) is already built in to enable safe and simple triggering of pyro fuses without the need to develop a complicated safety mechanism. The MLX91231 is ASIL B(D) compliant as per ISO 26262 and supports system-level integration up to ASIL D. The custom software design of the MLX91231 is consistent with existing and future Melexis solutions.07.12.2023 08:30:00Decnews_2024-01-15_11.jpg\images\news_2024-01-15_11.jpghttps://www.melexis.com/en/product/MLX91231/Smart-IVT-Shunt-Interface-Current-Sensormelexis.com
Financing Dedicated to Environmental InitiativesMitsubishi Electric Corporation announced that it ...11704Industry NewsFinancing Dedicated to Environmental InitiativesMitsubishi Electric Corporation announced that it has set the terms and conditions for issuing its first corporate green bonds in the Japanese market, as initially announced in a news release on November 10. The proceeds from the bonds will be used to construct a silicon-carbide (SiC) power semiconductor plant and upgrade related facilities. Mitsubishi Electric has positioned sustainability as a cornerstone of its overall business, including initiatives to address climate change and other pressing issues facing modern society. This commitment to sustainability is reflected in the company's Environmental Sustainability Vision 2050 and Environmental Declaration to "protect the air, land, and water with our hearts and technologies to sustain a better future for all." Mitsubishi Electric has set a goal to aim for net zero greenhouse gas emissions from factories and offices by FY2031 and net-zero greenhouse gas emissions in its entire value chain by FY2051, and is striving to create and expand businesses that contribute to carbon neutrality. In light of the company's active sustainability initiatives, 41 investors have announced their intention to invest in Mitsubishi Electric's first green bonds. Going forward, Mitsubishi Electric expects to accelerate efforts to contribute to the achievement of sustainable development goals (SDGs) in society for greater sustainability.07.12.2023 07:00:00Decnews_2024-01-01_2.jpg\images\news_2024-01-01_2.jpghttps://www.mitsubishielectric.com/news/2023/1207.htmlmitsubishielectric.com
Motor Driver ICs Enable Full Torque at Zero Speed for Sensorless BLDC MotorsRenesas Electronics introduced a family of motor d...11723Product ReleaseMotor Driver ICs Enable Full Torque at Zero Speed for Sensorless BLDC MotorsRenesas Electronics introduced a family of motor driver ICs for brushless DC (BLDC) motor applications. The devices implement Renesas' patent-pending technologies that enable full torque at zero speed from motors without sensors. The motor driver ICs enable Renesas customers to design sensorless BLDC motor systems with higher horsepower and speed at a given torque. They also improve power consumption and reliability, while reducing cost and board space by lowering the number of components designers need to use.<br>Renesas is introducing three motor driver ICs with the new technology:<br>The RAA306012 65V, 3-phase Smart Driver is a standalone device that can be paired with a variety of MCUs from Renesas or from other sources.<br>The RAJ306101 integrates a Renesas RX13T 32-bit MCU with the RAA306012 in a single package, reducing board space and improving cost and reliability.<br>The RAJ306102 integrates a 16-bit Renesas RL78/G1F MCU with the RAA306012, providing similar integration benefits.<br><br>The ability to enable full torque at zero speed without sensors is made possible by two Renesas innovations. Enhanced Inductive Sensing (EIS) offers stable position detection when the motor is completely stopped. When the motor is operating at extremely low speed, Motor Rotor position Identification (MRI) is used. At higher speeds, the motor driver ICs use conventional methods. Both of the EIS and MRI algorithms include patent-pending technology developed by Renesas.06.12.2023 15:30:00Decnews_2024-01-01_21.jpg\images\news_2024-01-01_21.jpghttps://www.renesas.com/us/en/about/press-room/renesas-programmable-motor-driver-ics-are-first-enable-full-torque-zero-speed-sensorless-brushlessrenesas.com
150W DC/DC Converter with 10:1 Input Range for Rail ApplicationsFlex Power Modules has launched its PKM7200W serie...11740Product Release150W DC/DC Converter with 10:1 Input Range for Rail ApplicationsFlex Power Modules has launched its PKM7200W series of DC/DC converters with an input range of 16-160V (185V/s). In a case measuring 62 x 40 x 13 mm<sup>3</sup> the products provide 150W continuous output power and 12V, 24V or 54VDC fully regulated single outputs with up to 89% efficiency and 4kVDC isolation, meeting the requirements of EN 50155 for rail, as well as IEC/EN/UL 62368-1 for IT and audio/visual applications. The PKM7200W series is equipped with a VBUS pin, an input-referenced connection that is boosted to around 100 V, irrespective of the input voltage. This can be used to charge a user-supplied capacitor which the DC/DC switches in when the input power is interrupted. The feature enables long hold-up time with a relatively small capacitor, to meet the 10–30ms requirements of EN 50155. The products are compliant and/or qualified according to EN 45545-2, EN 61373, IEC 60068, EN 50121-3-2, EN 55011, EN 61000-4. EMI conducted emissions meet EN 55032, CISPR 32 and FCC part 15J 'Class B' with an external filter. The PKM7200W series operates from -40°C to +100°C baseplate temperature with derating, depending on attached heatsink and airflow. Typically, the parts provide full load with a 20mm attached quarter-brick heatsink up to 60°C ambient air temperature in natural convection and to around 90°C with 3m/s airflow. The PKM7200W series is fully featured, with a programmable input under-voltage lockout, remote control, output trim and remote sensing. Protection includes over-temperature, and output short-circuit, over-voltage and over-current.06.12.2023 13:30:00Decnews_2024-01-15_16.jpg\images\news_2024-01-15_16.jpghttps://flexpowermodules.com/150w-dc-dc-has-101-input-rangeflexpowermodules.com
Francis Monteiro is now General Manager of BMZ BrazilBMZ Group has welcomed Francis Monteiro as General...11728PeopleFrancis Monteiro is now General Manager of BMZ BrazilBMZ Group has welcomed Francis Monteiro as General Manager BMZ Brazil. BMZ Brazil is BMZ Group's upcoming, sixth global production site. Francis Monteiro brings over twenty-five years of experience from various top management positions in internationally operating companies such as Sodecia Group, RAR Group - Colep Packaging.06.12.2023 10:30:00Decnews_2024-01-15_5.jpg\images\news_2024-01-15_5.jpghttps://www.bmz-group.com/en/index.phpbmz-group.com
Miniature TMR Sensors with Enhanced Sensitivity and Power EfficiencyLittlefuse introduced the 54100 and 54140 miniatur...11736Product ReleaseMiniature TMR Sensors with Enhanced Sensitivity and Power EfficiencyLittlefuse introduced the 54100 and 54140 miniature Tunnel Magneto-Resistance (TMR) effect sensors which are claimed to "offer unmatched sensitivity and power efficiency, revolutionizing the magnetic sensing industry". The key differentiator of the 54100/54140 sensors is their sensitivity and 100x improvement in power efficiency compared to Hall Effect sensors. These sensors offer activation in the x-y plane instead of the traditional z-axis within the operating temperature range of -40 to +100°C. The 54100 flange-mount sensor's housing measures are 25.5 x 11.00 x 3.00mm<sup>3</sup>. The case design allows for both screw and adhesive mounting. With a 3-wire configuration (Power - Ground - Output) and digital output, this sensor can switch up to 5.5V<sub>DC</sub> and 3.0mA output current. The standard lead lengths are 300mm and 1000mm, and there are customization options for high-volume production needs. On the other hand, the 54140 flat pack sensor delivers its performance in a compact package, measuring 23.00 x 14.00 x 5.90 mm<sup>3</sup>. Like the 54100 it also provides digital output and is available as a three-wire sensor configuration with the same performance characteristics and customization. These Omnipolar TMR sensors are well-suited for applications like position and limit sensing, RPM measurement, flow metering, commutation of brushless DC motors, magnetic encoders and angle sensing.06.12.2023 09:30:00Decnews_2024-01-15_12.jpg\images\news_2024-01-15_12.jpghttps://www.littelfuse.com/products/magnetic-sensors-and-reed-switches/tmr-sensors.aspxlittelfuse.com
CoolMOS S7T Device with integrated Temperature SensorInfineon Technologies launches its CoolMOS S7T pro...11743Product ReleaseCoolMOS S7T Device with integrated Temperature SensorInfineon Technologies launches its CoolMOS S7T product family with an integrated temperature sensor to improve the accuracy of junction temperature sensing. The integration of these products has a positive impact on the durability, safety, and efficiency of many electronic applications. The CoolMOS S7T is best suited for solid-state relay (SSR) applications for enhanced performance and reliability due to its R<sub>DS(on)</sub> and its embedded sensor. Infineon's approach improves the relay's performance and ensures reliable operation even under overload conditions. The integrated temperature sensor provides up to 40 percent greater accuracy and ten times faster response time than a standard independent on-board sensor located at the drain. Additionally, the monitoring process can be performed individually within a multi-device system for improved reliability. Compared to electromechanical relays, the total power dissipation can be improved up to two times, while current solid state triac solutions are more than 5 times less efficient. Improved efficiency and the ability to handle higher loads help in reducing power consumption and energy costs. Starter kits are also available05.12.2023 16:30:00Decnews_2024-01-15_19.jpg\images\news_2024-01-15_19.jpghttps://www.infineon.com/cms/en/product/power/mosfet/n-channel/500v-950v/600v-coolmos-s7/infineon.com